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Giwa R, Hosur P. Superconductor Vortex Spectrum Including Fermi Arc States in Time-Reversal Symmetric Weyl Semimetals. Phys Rev Lett 2023; 130:156402. [PMID: 37115867 DOI: 10.1103/physrevlett.130.156402] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/28/2022] [Revised: 12/21/2022] [Accepted: 03/27/2023] [Indexed: 06/19/2023]
Abstract
Using semiclassics to surmount the hurdle of bulk-surface inseparability, we derive the superconductor vortex spectrum in nonmagnetic Weyl semimetals and show that it stems from the Berry phase of orbits made of Fermi arcs on opposite surfaces and bulk chiral modes. Tilting the vortex transmutes it between bosonic, fermionic, and supersymmetric, produces periodic peaks in the density of states that signify novel nonlocal Majorana modes, and yields a thickness-independent spectrum at magic "magic angles." We propose (Nb,Ta)P as candidate materials and tunneling spectroscopy as the ideal experiment.
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Affiliation(s)
- Rauf Giwa
- University of Houston, Houston, Texas 77204, USA
| | - Pavan Hosur
- University of Houston, Houston, Texas 77204, USA
- Texas Center for Superconductivity at the University of Houston, Houston, Texas 77204, USA
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2
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Liu L, Liu X, Song P, Zhang L, Huang X, Zhang W, Zhang Z, Jia Y. Surface Superconductivity with High Transition Temperatures in Layered Ca nB n+1C n+1 Films. Nano Lett 2023; 23:1924-1929. [PMID: 36790290 DOI: 10.1021/acs.nanolett.2c05038] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Proposed by Ginzberg nearly 60 years ago, surface superconductivity refers to the emergent phenomenon that the electrons on or near the surface of a material becomes superconducting despite its bulk is nonsuperconducting. Here, based on first-principles calculations within density functional theory, we predict that the superconducting transition temperature Tc at the surfaces of CanBn+1Cn+1 (n = 1, 2, 3, ...) films can be drastically enhanced to ∼90 K from 8 K for bulk CaBC. Our detailed analyses reveal that structural symmetry reduction at surfaces induces pronounced carrier self-doping into the surface B-C layer of the films and shifts the σ-bonding states toward the Fermi level; furthermore, the in-plane stretching modes of the surface layers experience significant softening. These two effects work collaboratively to strongly enhance the electron-phonon coupling, which in turn results in much higher Tc values than the McMillian limit. These findings point to new material platforms for realizing unusually high-Tc surface superconductivity.
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Affiliation(s)
- Liangliang Liu
- Key Laboratory for Special Functional Materials of Ministry of Education, School of Materials Science and Engineering, Henan University, Kaifeng 475004, China
- Joint Center for Theoretical Physics, Henan University, Kaifeng 475004, China
| | - Xiaohan Liu
- Key Laboratory for Special Functional Materials of Ministry of Education, School of Materials Science and Engineering, Henan University, Kaifeng 475004, China
| | - Peng Song
- Key Laboratory for Special Functional Materials of Ministry of Education, School of Materials Science and Engineering, Henan University, Kaifeng 475004, China
- The Grainger College of Engineering, University of Illinois at Urbana-Champaign, Lincoln Hall, 702 S Wright Street, Urbana, Illinois 61801, United States
| | - Liying Zhang
- Key Laboratory for Special Functional Materials of Ministry of Education, School of Materials Science and Engineering, Henan University, Kaifeng 475004, China
- Joint Center for Theoretical Physics, Henan University, Kaifeng 475004, China
| | - Xiaowei Huang
- Key Laboratory for Special Functional Materials of Ministry of Education, School of Materials Science and Engineering, Henan University, Kaifeng 475004, China
| | - Weifeng Zhang
- Joint Center for Theoretical Physics, Henan University, Kaifeng 475004, China
| | - Zhenyu Zhang
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at Microscale (HFNL), University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Yu Jia
- Key Laboratory for Special Functional Materials of Ministry of Education, School of Materials Science and Engineering, Henan University, Kaifeng 475004, China
- Joint Center for Theoretical Physics, Henan University, Kaifeng 475004, China
- International Laboratory for Quantum Functional Materials of Henan, Zhengzhou University, Zhengzhou 450001, China
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3
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Ding Y, Wang X, Liao L, Cheng X, Zhang J, Wang Y, Ying H, Li Y. Strain modulation of photocurrent in Weyl semimetal TaIrTe 4. Opt Lett 2022; 47:4881-4884. [PMID: 36181141 DOI: 10.1364/ol.466325] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/10/2022] [Accepted: 08/22/2022] [Indexed: 06/16/2023]
Abstract
We study the effect of the strain on the energy bands of a TaIrTe4 sheet and the photocurrent in the Cu-TaIrTe4-Cu heterojunction by using the quantum transport simulations. It is found that the Weyl points can be completely broken with an increase of the strain along the z direction. One can obtain a large photocurrent in the Cu-TaIrTe4-Cu heterojunction in the absence of the strain; while the photocurrent can be sharply enhanced by the strain and reach a large value. Accordingly, the maximum values of the photocurrent can be explained in terms of the transitions between peaks of density of states and band structures. The strain-induced energy bands and photocurrent exhibit anisotropic behaviors. Our results provide a novel, to the best of our knkowledge, route to effectively modulate the energy bands and the photocurrent by utilizing mechanical methods for TaIrTe4-based devices.
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4
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Wang C, Xiao RC, Liu H, Zhang Z, Lai S, Zhu C, Cai H, Wang N, Chen S, Deng Y, Liu Z, Yang SA, Gao WB. Room-temperature third-order nonlinear Hall effect in Weyl semimetal TaIrTe 4. Natl Sci Rev 2022; 9:nwac020. [PMID: 36694799 PMCID: PMC9869080 DOI: 10.1093/nsr/nwac020] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/22/2021] [Revised: 01/14/2022] [Accepted: 01/16/2022] [Indexed: 01/27/2023] Open
Abstract
The second-order nonlinear Hall effect observed in the time-reversal symmetric system has not only shown abundant physical content, but also exhibited potential application prospects. Recently, a third-order nonlinear Hall effect has been observed in MoTe2 and WTe2. However, few-layer MoTe2 and WTe2 are usually unstable in air and the observed third-order nonlinear Hall effect can be measured only at low temperature, which hinders further investigation as well as potential application. Thus, exploring new air-stable material systems with a sizable third-order nonlinear Hall effect at room temperature is an urgent task. Here, in type-II Weyl semimetal TaIrTe4, we observed a pronounced third-order nonlinear Hall effect, which can exist at room temperature and remain stable for months. The third-order nonlinear Hall effect is connected to the Berry-connection polarizability tensor instead of the Berry curvature. The possible mechanism of the observation of the third-order nonlinear Hall effect in TaIrTe4 at room temperature has been discussed. Our findings will open an avenue towards exploring room-temperature nonlinear devices in new quantum materials.
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Affiliation(s)
| | | | - Huiying Liu
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore487372, Singapore
| | - Zhaowei Zhang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore637371, Singapore
| | - Shen Lai
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore637371, Singapore
| | - Chao Zhu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore639798, Singapore
| | - Hongbing Cai
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore637371, Singapore
| | - Naizhou Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore637371, Singapore
| | - Shengyao Chen
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing100190, China
| | - Ya Deng
- School of Materials Science and Engineering, Nanyang Technological University, Singapore639798, Singapore
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore639798, Singapore
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Han X, Wen P, Zhang L, Gao W, Chen H, Gao F, Zhang S, Huo N, Zou B, Li J. A Polarization-Sensitive Self-Powered Photodetector Based on a p-WSe 2/TaIrTe 4/n-MoS 2 van der Waals Heterojunction. ACS Appl Mater Interfaces 2021; 13:61544-61554. [PMID: 34910468 DOI: 10.1021/acsami.1c19526] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Polarization-sensitive photodetection is highly appealing considering its great important applications. However, the inherent in-plane symmetry of a material and the single structure of a detector hinder the further development of polarization detectors with high anisotropic ratios. Herein, we design a p-WSe2/TaIrTe4/n-MoS2 (p-Ta-n) heterojunction. As a type-II Weyl semimetal, TaIrTe4 with an orthorhombic structure has strong in-plane asymmetry, which is confirmed by angle-resolved polarized Raman spectroscopy and second-harmonic generation. Due to the specific structure of the p-Ta-n junction with two vertical built-in electric fields, the device obtains a broadband self-powered photodetection ranging from visible (405 nm) to telecommunication wavelength (1550 nm) regions. Further, an optimized device containing 50-70 nm-thick layered TaIrTe4 has been realized. What is more, high-resolution imaging of "T" based on the device with clear borders illustrates excellent stability of the device. Significantly, the photocurrent anisotropic ratio of the p-Ta-n detector can reach 9.1 under 635 nm light, which is more than eight times that of the best known TaIrTe4-based photodetector reported before. This p-Ta-n junction containing a type-II Weyl fermion semimetal can provide an effective approach toward highly polarization-sensitive and high-performance integrated broadband photodetectors.
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Affiliation(s)
- Xiaoning Han
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China
| | - Peiting Wen
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China
| | - Li Zhang
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China
| | - Wei Gao
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China
| | - Hongyu Chen
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China
| | - Feng Gao
- School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China
| | - Shihao Zhang
- Institute of Quantum Computing and Computer Science Theory, School of Computer Science and Engineering, Sun Yat-Sen University, Guangzhou 510006, China
| | - Nengjie Huo
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China
| | - Bingsuo Zou
- School of Resources, Environment and Materials, Guangxi University, Nanning 530004, China
| | - Jingbo Li
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China
- Guangdong Key Lab of Chip and Integration Technology, Guangzhou 51063, P. R. China
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6
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Shipunov G, Piening BR, Wuttke C, Romanova TA, Sadakov AV, Sobolevskiy OA, Guzovsky EY, Usoltsev AS, Pudalov VM, Efremov DV, Subakti S, Wolf D, Lubk A, Büchner B, Aswartham S. Layered van der Waals Topological Metals of TaTMTe 4 (TM = Ir, Rh, Ru) Family. J Phys Chem Lett 2021; 12:6730-6735. [PMID: 34264086 DOI: 10.1021/acs.jpclett.1c01648] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Layered van der Waals materials of the family TaTMTe4 (TM = Ir, Rh, Ru) are showing interesting electronic properties. We report the growth and characterization of TaIrTe4, TaRhTe4, TaIr1-xRhxTe4 (x = 0.06, 0.14, 0.78, 0.92), Ta1+xRu1-xTe4 single crystals. X-ray powder diffraction confirms that TaRhTe4 is isostructural to TaIrTe4. All these compounds are metallic with diamagnetic behavior. Below T ≈ 4 K we observed signatures of the superconductivity in the TaIr1-xRhxTe4 compounds for x = 0.92. All samples show weak quadratic-in-field magnetoresistance (MR). However, for TaIr1-xRhxTe4 with x ≈ 0.78, the MR has a linear term dominating in low fields that indicates the presence of Dirac cones in the vicinity of the Fermi energy. For TaRhTe4 series the MR is almost isotropic. Electronic structure calculations for TaIrTe4 and TaRhTe4 reveal appearance of the Rh band close to the Fermi level.
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Affiliation(s)
- G Shipunov
- Institute for Solid State Research, Leibniz IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany
| | - B R Piening
- Institute for Solid State Research, Leibniz IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany
| | - C Wuttke
- Institute for Solid State Research, Leibniz IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany
| | - T A Romanova
- P. N. Lebedev Physical Institute, Russian Academy of Sciences, 119991 Moscow, Russia
| | - A V Sadakov
- P. N. Lebedev Physical Institute, Russian Academy of Sciences, 119991 Moscow, Russia
| | - O A Sobolevskiy
- P. N. Lebedev Physical Institute, Russian Academy of Sciences, 119991 Moscow, Russia
| | - E Yu Guzovsky
- P. N. Lebedev Physical Institute, Russian Academy of Sciences, 119991 Moscow, Russia
| | - A S Usoltsev
- P. N. Lebedev Physical Institute, Russian Academy of Sciences, 119991 Moscow, Russia
| | - V M Pudalov
- P. N. Lebedev Physical Institute, Russian Academy of Sciences, 119991 Moscow, Russia
| | - D V Efremov
- Institute for Solid State Research, Leibniz IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany
| | - S Subakti
- Institute for Solid State Research, Leibniz IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany
| | - D Wolf
- Institute for Solid State Research, Leibniz IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany
| | - A Lubk
- Institute for Solid State Research, Leibniz IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany
| | - B Büchner
- Institute for Solid State Research, Leibniz IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany
- Institute of Solid State and Materials Physics, Technische Universität Dresden, 01062 Dresden, Germany
- Würzburg-Dresden Cluster of Excellence ct.qmat, Technische Universität Dresden, 01062 Dresden, Germany
| | - S Aswartham
- Institute for Solid State Research, Leibniz IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany
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Adam ML, Bala AA. Superconductivity in quasi-2D InTaX 2(X = S, Se) type-II Weyl semimetals. J Phys Condens Matter 2021; 33:225502. [PMID: 33690195 DOI: 10.1088/1361-648x/abed1a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/22/2021] [Accepted: 03/09/2021] [Indexed: 06/12/2023]
Abstract
Herein, first-principles calculations were employed to study the electronic, topological, and superconducting properties of InTaX2(X = S, Se). InTaX2exhibits nodal lines in the absence of spin-orbit coupling (SOC); on SOC inclusion, the nodal lines form Weyl rings with the Weyl points classified as a type-II Weyl semimetal (WSM) with tilted cones. Using Green functions method calculations, surface states distinguishable from the bulk states, and Fermi arcs surface states were visualized on the (001) easily cleavable indium terminated surface of both materials. The electron-phonon calculations using the Allen-Dynes relations predict InTaSe2and InTaS2to be superconducting around 2.38 K and 3.25 K. The prediction of these exotic properties in InTaX2(X = S, Se) makes them suitable for experimental validation of topological superconductivity in type-II WSMs.
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Affiliation(s)
- Mukhtar Lawan Adam
- National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230029, People's Republic of China
- Physics Department, Bayero University, Kano 700231, Nigeria
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8
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Li Y, Wu Y, Xu C, Liu N, Ma J, Lv B, Yao G, Liu Y, Bai H, Yang X, Qiao L, Li M, Li L, Xing H, Huang Y, Ma J, Shi M, Cao C, Liu Y, Liu C, Jia J, Xu ZA. Anisotropic gapping of topological Weyl rings in the charge-density-wave superconductor In xTaSe 2. Sci Bull (Beijing) 2021; 66:243-249. [PMID: 36654329 DOI: 10.1016/j.scib.2020.09.007] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/30/2020] [Revised: 08/04/2020] [Accepted: 08/31/2020] [Indexed: 01/20/2023]
Abstract
Topological materials and topological phases have recently become a hot topic in condensed matter physics. In this work, we report an In-intercalated transition-metal dichalcogenide InxTaSe2 (named 112 system), a topological nodal-line semimetal in the presence of both charge density wave (CDW) and superconductivity. In the x = 0.58 sample, the 2×3 commensurate CDW (CCDW) and the 2×2 CCDW are observed below 116 and 77 K, respectively. Consistent with theoretical calculations, the spin-orbital coupling gives rise to two twofold-degenerate nodal rings (Weyl rings) connected by drumhead surface states, confirmed by angle-resolved photoemission spectroscopy. Our results suggest that the 2×2 CCDW ordering gaps out one Weyl ring in accordance with the CDW band folding, while the other Weyl ring remains gapless with intact surface states. In addition, superconductivity emerges at 0.91 K, with the upper critical field deviating from the s-wave behavior at low temperature, implying possibly unconventional superconductivity. Therefore, we think this type of the 112 system may possess abundant physical states and offer a platform to investigate the interplay between CDW, nontrivial band topology and superconductivity.
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Affiliation(s)
- Yupeng Li
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Yi Wu
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Chenchao Xu
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Ningning Liu
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Jiang Ma
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Baijiang Lv
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Gang Yao
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Yan Liu
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Hua Bai
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Xiaohui Yang
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Lei Qiao
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Miaocong Li
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Linjun Li
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Hui Xing
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Yaobo Huang
- Shanghai Institute of Applied Physics, CAS, Shanghai 201204, China
| | - Junzhang Ma
- Paul Scherrer Institute, Swiss Light Source, CH-5232 Villigen PSI, Switzerland
| | - Ming Shi
- Paul Scherrer Institute, Swiss Light Source, CH-5232 Villigen PSI, Switzerland
| | - Chao Cao
- Department of Physics, Hangzhou Normal University, Hangzhou 310036, China.
| | - Yang Liu
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China.
| | - Canhua Liu
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China; Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Jinfeng Jia
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China; Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Zhu-An Xu
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China; Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
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