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Li T, Deng S, Liu H, Chen J. Insights into Strain Engineering: From Ferroelectrics to Related Functional Materials and Beyond. Chem Rev 2024. [PMID: 38754042 DOI: 10.1021/acs.chemrev.3c00767] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/18/2024]
Abstract
Ferroelectrics have become indispensable components in various application fields, including information processing, energy harvesting, and electromechanical conversion, owing to their unique ability to exhibit electrically or mechanically switchable polarization. The distinct polar noncentrosymmetric lattices of ferroelectrics make them highly responsive to specific crystal structures. Even slight changes in the lattice can alter the polarization configuration and response to external fields. In this regard, strain engineering has emerged as a prevalent regulation approach that not only offers a versatile platform for structural and performance optimization within ferroelectrics but also unlocks boundless potential in various functional materials. In this review, we systematically summarize the breakthroughs in ferroelectric-based functional materials achieved through strain engineering and progress in method development. We cover research activities ranging from fundamental attributes to wide-ranging applications and novel functionalities ranging from electromechanical transformation in sensors and actuators to tunable dielectric materials and information technologies, such as transistors and nonvolatile memories. Building upon these achievements, we also explore the endeavors to uncover the unprecedented properties through strain engineering in related chemical functionalities, such as ferromagnetism, multiferroicity, and photoelectricity. Finally, through discussions on the prospects and challenges associated with strain engineering in the materials, this review aims to stimulate the development of new methods for strain regulation and performance boosting in functional materials, transcending the boundaries of ferroelectrics.
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Affiliation(s)
- Tianyu Li
- Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Shiqing Deng
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Hui Liu
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Jun Chen
- Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
- Hainan University, Haikou 570228, China
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2
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Li N, Lee HJ, Sri Gyan D, Ahn Y, Landahl EC, Carnis J, Lee JY, Kim TY, Unithrattil S, Jo JY, Chun SH, Kim S, Park SY, Eom I, Adamo C, Li SJ, Kaaret JZ, Schlom DG, Wen H, Benedek NA, Evans PG. Ultrafast Optically Induced Perturbation of Oxygen Octahedral Rotations in Multiferroic BiFeO 3 Thin Films. Nano Lett 2024. [PMID: 38710072 DOI: 10.1021/acs.nanolett.4c01519] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2024]
Abstract
The functional properties of complex oxides, including magnetism and ferroelectricity, are closely linked to subtle structural distortions. Ultrafast optical excitations provide the means to manipulate structural features and ultimately to affect the functional properties of complex oxides with picosecond-scale precision. We report that the lattice expansion of multiferroic BiFeO3 following above-bandgap optical excitation leads to distortion of the oxygen octahedral rotation (OOR) pattern. The continuous coupling between OOR and strain was probed using time-resolved X-ray free-electron laser diffraction with femtosecond time resolution. Density functional theory calculations predict a relationship between the OOR and the elastic strain consistent with the experiment, demonstrating a route to employing this approach in a wider range of systems. Ultrafast control of the functional properties of BiFeO3 thin films is enabled by this approach because the OOR phenomena are related to ferroelectricity, and via the Fe-O-Fe bond angles, the superexchange interaction between Fe atoms.
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Affiliation(s)
- Ni Li
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Hyeon Jun Lee
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
- Department of Materials Science and Engineering, Kangwon National University, Samcheok 25913, South Korea
| | - Deepankar Sri Gyan
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Youngjun Ahn
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Eric C Landahl
- Department of Physics and Astrophysics, DePaul University, Chicago, Illinois 60614, United States
| | - Jerome Carnis
- Aix Marseille Université, Université de Toulon, CNRS, IM2NP, Marseille 13013, France
- ESRF - The European Synchrotron, 71 Avenue des Martyrs, Grenoble 38000, France
| | - Jun Young Lee
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, South Korea
| | - Tae Yeon Kim
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, South Korea
| | - Sanjith Unithrattil
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, South Korea
| | - Ji Young Jo
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, South Korea
| | - Sae Hwan Chun
- Pohang Accelerator Laboratory, POSTECH, Pohang, Gyeongbuk 37673, South Korea
| | - Sunam Kim
- Pohang Accelerator Laboratory, POSTECH, Pohang, Gyeongbuk 37673, South Korea
| | - Sang-Youn Park
- Pohang Accelerator Laboratory, POSTECH, Pohang, Gyeongbuk 37673, South Korea
| | - Intae Eom
- Pohang Accelerator Laboratory, POSTECH, Pohang, Gyeongbuk 37673, South Korea
| | - Carolina Adamo
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
| | - Sabrina J Li
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
| | - Jeffrey Z Kaaret
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, United States
| | - Darrell G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, United States
- Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany
| | - Haidan Wen
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Nicole A Benedek
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
| | - Paul G Evans
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
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Hemme P, Philippe JC, Medeiros A, Alekhin A, Houver S, Gallais Y, Sacuto A, Forget A, Colson D, Mantri S, Xu B, Bellaiche L, Cazayous M. Tuning the Multiferroic Properties of BiFeO_{3} under Uniaxial Strain. Phys Rev Lett 2023; 131:116801. [PMID: 37774288 DOI: 10.1103/physrevlett.131.116801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/28/2023] [Accepted: 08/15/2023] [Indexed: 10/01/2023]
Abstract
More than twenty years ago, multiferroic compounds combining in particular magnetism and ferroelectricity were rediscovered. Since then, BiFeO_{3} has emerged as the most outstanding multiferroic by combining at room temperature almost all the fundamental or applicative properties that may be desired: electroactive spin wave excitations called electromagnons, conductive domain walls, or a low band gap of interest for magnonic devices. All these properties have so far only been discontinuously strain engineered in thin films according to the lattice parameter imposed by the substrate. Here we explore the ferroelectricity and the dynamic magnetic response of BiFeO_{3} bulk under continuously tunable uniaxial strain. Using elasto-Raman spectroscopy, we show that the ferroelectric soft mode is strongly enhanced under tensile strain and driven by the volume preserving deformation at low strain. The magnonic response is entirely modified with low energy magnon modes being suppressed for tensile strain above pointing out a transition from a cycloid to an homogeneous magnetic state. Effective Hamiltonian calculations show that the ferroelectric and the antiferrodistortive modes compete in the tensile regime. In addition, the homogeneous antiferromagnetic state becomes more stable compared to the cycloidal state above a +2% tensile strain close to the experimental value. Finally, we reveal the ferroelectric and magnetic orders of BiFeO_{3} under uniaxial strain and how the tensile strain allows us to unlock and to modify in a differentiated way the polarization and the magnetic structure.
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Affiliation(s)
- P Hemme
- Laboratoire Matériaux et Phénomènes Quantiques, Université Paris Cité, CNRS, 10 rue Alice Domon et Léonie Duquet, 75205 Paris Cedex 13, France
- Synchrotron SOLEIL, L'Orme des Merisiers Saint-Aubin, BP 48, 91192 Gif-sur-Yvette, France
| | - J-C Philippe
- Laboratoire Matériaux et Phénomènes Quantiques, Université Paris Cité, CNRS, 10 rue Alice Domon et Léonie Duquet, 75205 Paris Cedex 13, France
- Laboratoire de Physique des Solides, CNRS, Université Paris-Saclay, 91405 Orsay, France
| | - A Medeiros
- Laboratoire Matériaux et Phénomènes Quantiques, Université Paris Cité, CNRS, 10 rue Alice Domon et Léonie Duquet, 75205 Paris Cedex 13, France
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France
| | - A Alekhin
- Laboratoire Matériaux et Phénomènes Quantiques, Université Paris Cité, CNRS, 10 rue Alice Domon et Léonie Duquet, 75205 Paris Cedex 13, France
| | - S Houver
- Laboratoire Matériaux et Phénomènes Quantiques, Université Paris Cité, CNRS, 10 rue Alice Domon et Léonie Duquet, 75205 Paris Cedex 13, France
| | - Y Gallais
- Laboratoire Matériaux et Phénomènes Quantiques, Université Paris Cité, CNRS, 10 rue Alice Domon et Léonie Duquet, 75205 Paris Cedex 13, France
| | - A Sacuto
- Laboratoire Matériaux et Phénomènes Quantiques, Université Paris Cité, CNRS, 10 rue Alice Domon et Léonie Duquet, 75205 Paris Cedex 13, France
| | - A Forget
- Service de Physique de l'Etat Condensé, CEA Saclay, IRAMIS, SPEC (CNRS URA 2464), F-91191 Gif sur Yvette, France
| | - D Colson
- Service de Physique de l'Etat Condensé, CEA Saclay, IRAMIS, SPEC (CNRS URA 2464), F-91191 Gif sur Yvette, France
| | - S Mantri
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
| | - B Xu
- Institute of Theoretical and Applied Physics, Jiangsu Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University, Suzhou 215006, China
| | - L Bellaiche
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
| | - M Cazayous
- Laboratoire Matériaux et Phénomènes Quantiques, Université Paris Cité, CNRS, 10 rue Alice Domon et Léonie Duquet, 75205 Paris Cedex 13, France
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Xu S, Wang J, Chen P, Jin K, Ma C, Wu S, Guo E, Ge C, Wang C, Xu X, Yao H, Wang J, Xie D, Wang X, Chang K, Bai X, Yang G. Magnetoelectric coupling in multiferroics probed by optical second harmonic generation. Nat Commun 2023; 14:2274. [PMID: 37080982 PMCID: PMC10119081 DOI: 10.1038/s41467-023-38055-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/10/2023] [Accepted: 04/13/2023] [Indexed: 04/22/2023] Open
Abstract
Magnetoelectric coupling, as a fundamental physical nature and with the potential to add functionality to devices while also reducing energy consumption, has been challenging to be probed in freestanding membranes or two-dimensional materials due to their instability and fragility. In this paper, we report a magnetoelectric coupling probed by optical second harmonic generation with external magnetic field, and show the manipulation of the ferroelectric and antiferromagnetic orders by the magnetic and thermal fields in BiFeO3 films epitaxially grown on the substrates and in the freestanding ones. Here we define an optical magnetoelectric-coupling constant, denoting the ability of controlling light-induced nonlinear polarization by the magnetic field, and found the magnetoelectric-coupling was suppressed by strain releasing but remain robust against thermal fluctuation for freestanding BiFeO3.
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Affiliation(s)
- Shuai Xu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Jiesu Wang
- Beijing Academy of Quantum Information Sciences, 100193, Beijing, China
| | - Pan Chen
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Kuijuan Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.
- University of Chinese Academy of Sciences, 100049, Beijing, China.
- Songshan Lake Materials Laboratory, 523808, Dongguan, Guangdong, China.
| | - Cheng Ma
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Shiyao Wu
- Beijing Academy of Quantum Information Sciences, 100193, Beijing, China
| | - Erjia Guo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Chen Ge
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Can Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- University of Chinese Academy of Sciences, 100049, Beijing, China
- Songshan Lake Materials Laboratory, 523808, Dongguan, Guangdong, China
| | - Xiulai Xu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China
| | - Hongbao Yao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Jingyi Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Donggang Xie
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Xinyan Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Kai Chang
- Beijing Academy of Quantum Information Sciences, 100193, Beijing, China
| | - Xuedong Bai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- University of Chinese Academy of Sciences, 100049, Beijing, China
- Songshan Lake Materials Laboratory, 523808, Dongguan, Guangdong, China
| | - Guozhen Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- University of Chinese Academy of Sciences, 100049, Beijing, China
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5
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Yao X, Wang C, Guo EJ, Wang X, Li X, Liao L, Zhou Y, Lin S, Jin Q, Ge C, He M, Bai X, Gao P, Yang G, Jin KJ. Ferroelectric Proximity Effect and Topological Hall Effect in SrRuO 3/BiFeO 3 Multilayers. ACS Appl Mater Interfaces 2022; 14:6194-6202. [PMID: 35072446 DOI: 10.1021/acsami.1c21703] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Interfaces between complex oxides provide a unique opportunity to discover novel interfacial physics and functionalities. Here, we fabricate the multilayers of itinerant ferromagnet SrRuO3 (SRO) and multiferroic BiFeO3 (BFO) with atomically sharp interfaces. Atomically resolved transmission electron microscopy reveals that a large ionic displacement in BFO can penetrate into SRO layers near the BFO/SRO interfaces to a depth of 2-3 unit cells, indicating the ferroelectric proximity effect. A topological Hall effect is indicated by hump-like anomalies in the Hall measurements of the multilayer with a moderate thickness of the SRO layer. With magnetic measurements, it can be further confirmed that each SRO layer in the multilayers can be divided into interfacial and middle regions, which possess different magnetic ground states. Our work highlights the key role of functional heterointerfaces in exotic properties and provides an important guideline to design spintronic devices based on magnetic skyrmions.
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Affiliation(s)
- Xiaokang Yao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Can Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Er-Jia Guo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Xinyan Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiaomei Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Lei Liao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yong Zhou
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shan Lin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qiao Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Chen Ge
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Meng He
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xuedong Bai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Peng Gao
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Guozhen Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Kui-Juan Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
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Huang C, Liao Z, Li M, Guan C, Jin F, Ye M, Zeng X, Zhang T, Chen Z, Qi Y, Gao P, Chen L. A Highly Strained Phase in PbZr 0.2Ti 0.8O 3 Films with Enhanced Ferroelectric Properties. Adv Sci (Weinh) 2021; 8:2003582. [PMID: 33898177 PMCID: PMC8061395 DOI: 10.1002/advs.202003582] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/20/2020] [Revised: 11/22/2020] [Indexed: 06/12/2023]
Abstract
Although epitaxial strain imparted by lattice mismatch between a film and the underlying substrate has led to distinct structures and emergent functionalities, the discrete lattice parameters of limited substrates, combined with strain relaxations driven by film thickness, result in severe obstructions to subtly regulate electro-elastic coupling properties in perovskite ferroelectric films. Here a practical and universal method to achieve highly strained phases with large tetragonal distortions in Pb-based ferroelectric films through synergetic effects of moderately (≈1.0%) misfit strains and laser fluences during pulsed laser deposition process is demonstrated. The phase possesses unexpectedly large Poisson's ratio and negative thermal expansion, and concomitant enhancements of spontaneous polarization (≈100 µC cm-2) and Curie temperature (≈800 °C), 40% and 75% larger than that of bulk counterparts, respectively. This strategy efficiently circumvents the long-standing issue of limited numbers of discrete substrates and enables continuous regulations of exploitable lattice states in functional oxide films with tightly elastic coupled performances beyond their present levels.
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Affiliation(s)
- Chuanwei Huang
- Shenzhen Key Laboratory of Special Functional MaterialsCollege of Materials Science and EngineeringShenzhen UniversityShenzhen518060China
| | - Zhaolong Liao
- Shenzhen Key Laboratory of Special Functional MaterialsCollege of Materials Science and EngineeringShenzhen UniversityShenzhen518060China
| | - Mingqiang Li
- Electron Microscopy Laboratory, and International Center for Quantum MaterialsSchool of PhysicsPeking UniversityBeijing100871China
| | - Changxin Guan
- Shenzhen Key Laboratory of Special Functional MaterialsCollege of Materials Science and EngineeringShenzhen UniversityShenzhen518060China
- Department of PhysicsSouthern University of Science and TechnologyShenzhenGuangdong518055China
- Department of Materials Science and EngineeringHubei UniversityWuhan430062China
| | - Fei Jin
- Shenzhen Key Laboratory of Special Functional MaterialsCollege of Materials Science and EngineeringShenzhen UniversityShenzhen518060China
| | - Mao Ye
- Department of PhysicsSouthern University of Science and TechnologyShenzhenGuangdong518055China
| | - Xierong Zeng
- Shenzhen Key Laboratory of Special Functional MaterialsCollege of Materials Science and EngineeringShenzhen UniversityShenzhen518060China
| | - Tianjin Zhang
- Department of Materials Science and EngineeringHubei UniversityWuhan430062China
| | - Zuhuang Chen
- School of Materials Science and EngineeringHarbin Institute of TechnologyShenzhen518055China
| | - Yajun Qi
- Department of Materials Science and EngineeringHubei UniversityWuhan430062China
| | - Peng Gao
- Electron Microscopy Laboratory, and International Center for Quantum MaterialsSchool of PhysicsPeking UniversityBeijing100871China
| | - Lang Chen
- Department of PhysicsSouthern University of Science and TechnologyShenzhenGuangdong518055China
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7
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Burns SR, Paull O, Juraszek J, Nagarajan V, Sando D. The Experimentalist's Guide to the Cycloid, or Noncollinear Antiferromagnetism in Epitaxial BiFeO 3. Adv Mater 2020; 32:e2003711. [PMID: 32954556 DOI: 10.1002/adma.202003711] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2020] [Revised: 07/30/2020] [Indexed: 06/11/2023]
Abstract
Bismuth ferrite (BiFeO3 ) is one of the most widely studied multiferroics. The coexistence of ferroelectricity and antiferromagnetism in this compound has driven an intense search for electric-field control of the magnetic order. Such efforts require a complete understanding of the various exchange interactions that underpin the magnetic behavior. An important characteristic of BiFeO3 is its noncollinear magnetic order; namely, a long-period incommensurate spin cycloid. Here, the progress in understanding this fascinating aspect of BiFeO3 is reviewed, with a focus on epitaxial films. The advances made in developing the theory used to capture the complexities of the cycloid are first chronicled, followed by a description of the various experimental techniques employed to probe the magnetic order. To help the reader fully grasp the nuances associated with thin films, a detailed description of the spin cycloid in the bulk is provided. The effects of various perturbations on the cycloid are then described: magnetic and electric fields, doping, epitaxial strain, finite size effects, and temperature. To conclude, an outlook on possible device applications exploiting noncollinear magnetism in BiFeO3 films is presented. It is hoped that this work will act as a comprehensive experimentalist's guide to the spin cycloid in BiFeO3 thin films.
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Affiliation(s)
- Stuart R Burns
- School of Materials Science and Engineering, UNSW Sydney, High Street, Kensington, Sydney, 2052, Australia
- Department of Chemistry, University of Calgary, Calgary, AB, T2N 1N4, Canada
| | - Oliver Paull
- School of Materials Science and Engineering, UNSW Sydney, High Street, Kensington, Sydney, 2052, Australia
| | - Jean Juraszek
- Normandie University, UNIROUEN, INSA Rouen, CNRS, GPM, Rouen, 76000, France
| | - Valanoor Nagarajan
- School of Materials Science and Engineering, UNSW Sydney, High Street, Kensington, Sydney, 2052, Australia
| | - Daniel Sando
- School of Materials Science and Engineering, UNSW Sydney, High Street, Kensington, Sydney, 2052, Australia
- Mark Wainwright Analytical Centre, UNSW Sydney, High Street, Kensington, Sydney, 2052, Australia
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8
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Belhadi J, Yousfi S, El Marssi M, Arnold DC, Bouyanfif H. Tailoring the photovoltaic effect in (1 1 1) oriented BiFeO 3/LaFeO 3 superlattices. J Phys Condens Matter 2020; 32:135301. [PMID: 31791017 DOI: 10.1088/1361-648x/ab5e11] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Ferroelectric and photovoltaic properties of (BiFeO3)(1-x)Λ/(LaFeO3) xΛ superlattices grown by pulsed laser deposition have been investigated (Λ being the bilayer thickness). For a high concentration of BiFeO3 a ferroelectric state is observed simultaneously with a switchable photovoltaic response. In contrast for certain concentration of LaFeO3 a non-switchable photovoltaic effect is evidenced. Such modulation of the PV response in the superlattices is attributed to the ferroelectric to paraelectric phase transition which is controlled with the increase of x. Remarkably, concomitant to this change of PV mechanism, a change of the conduction mechanism also seems to take place from a bulk-limited to an interface-limited transport as x increases.
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Affiliation(s)
- J Belhadi
- LPMC EA2081, Université de Picardie Jules Verne, 33 Rue Saint Leu, 80000 Amiens, France
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9
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Abstract
Ferroelectric materials have been utilized in a broad range of electronic, optical, and electromechanical applications and hold the promise for the design of future high-density nonvolatile memories and multifunctional nano-devices. The applications of ferroelectric materials stem from the ability to switch polarized domains by applying an electric field, and therefore a fundamental understanding of the switching dynamics is critical for design of practical devices. In this review, we summarize the progress in the study of the microscopic process of ferroelectric domain switching using recently developed in situ transmission electron microscopy (TEM). We first briefly introduce the instrumentation, experimental procedures, imaging mechanisms, and analytical methods of the state-of-the-art in situ TEM techniques. The application of these techniques to studying a wide range of complex switching phenomena, including domain nucleation, domain wall motion, domain relaxation, domain-defect interaction, and the interplay between different types of domains, is demonstrated. The underlying physics of these dynamic processes are discussed.
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Affiliation(s)
- Linze Li
- Department of Materials Science and Engineering, University of California, Irvine, CA 92697, United States of America
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10
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Abstract
A wet-chemical synthesis process was designed to obtain reproducible single-phase multiferroic BiFeO3 nanoparticles. The phase purity, single crystallinity, and size of the nanoparticles are confirmed through the analysis of X-ray diffraction patterns, Raman spectroscopy, and high resolution transmission electron microscopy experiments. Crystal nucleation happens within the amorphous-rich area in multiple seeds, leading to the formation of single crystalline nanoparticles with no preferential faceting. Crystallization mechanisms of BiFeO3 nanoparticles were investigated following the Kissinger-Akahira-Sunose approach, indicating that two crystallization steps are responsible of the complete BiFeO3 nanoparticle formation. The first crystallization step involves a maximum of 70% of the final crystal volume, arising from nanocrystal nucleation and growth. The second step occurs above this threshold crystal volume fraction, and it is related to the nanocrystallite coalescence process. Analysis of the thermodynamic process of the crystallization of BiFeO3 nanoparticles following Ostwald rules suggests a relatively low energy barrier for crystal nucleation, highlighting that phase pure, single crystalline BiFeO3 nanoparticles are obtained using the present optimized wet-chemical synthesis process, with temperatures as low as 450 °C.
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Affiliation(s)
- Xiaofei Bai
- Institut des Nanotechnologies de Lyon, CNRS UMR5270 ECL INSA UCBL CPE , 69621 Villeurbanne Cedex , France.,Laboratoire Structures, Propriétés et Modélisation des Solides (SPMS), CentraleSupélec, CNRS-UMR8580, Université Paris-Saclay , Gif-sur-Yvette , France
| | - Matthieu Bugnet
- Université de Lyon, INSA Lyon, UCBL Lyon 1, MATEIS, UMR 5510 CNRS , 69621 Villeurbanne Cedex , France
| | - Carlos Frontera
- Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus UAB , Bellaterra E-08193 , Spain
| | - Pascale Gemeiner
- Laboratoire Structures, Propriétés et Modélisation des Solides (SPMS), CentraleSupélec, CNRS-UMR8580, Université Paris-Saclay , Gif-sur-Yvette , France
| | - Jérôme Guillot
- Materials Research and Technology Department , Luxembourg Institute of Science and Technology , L-4422 Belvaux , Luxembourg
| | - Damien Lenoble
- Materials Research and Technology Department , Luxembourg Institute of Science and Technology , L-4422 Belvaux , Luxembourg
| | - Ingrid C Infante
- Institut des Nanotechnologies de Lyon, CNRS UMR5270 ECL INSA UCBL CPE , 69621 Villeurbanne Cedex , France
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11
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Huyan H, Li L, Addiego C, Gao W, Pan X. Structures and electronic properties of domain walls in BiFeO 3 thin films. Natl Sci Rev 2019; 6:669-683. [PMID: 34691922 PMCID: PMC8291563 DOI: 10.1093/nsr/nwz101] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/14/2019] [Revised: 07/12/2019] [Accepted: 07/14/2019] [Indexed: 11/14/2022] Open
Abstract
Domain walls (DWs) in ferroelectrics are atomically sharp and can be created, erased, and reconfigured within the same physical volume of ferroelectric matrix by external electric fields. They possess a myriad of novel properties and functionalities that are absent in the bulk of the domains, and thus could become an essential element in next-generation nanodevices based on ferroelectrics. The knowledge about the structure and properties of ferroelectric DWs not only advances the fundamental understanding of ferroelectrics, but also provides guidance for the design of ferroelectric-based devices. In this article, we provide a review of structures and properties of DWs in one of the most widely studied ferroelectric systems, BiFeO3 thin films. We correlate their conductivity and photovoltaic properties to the atomic-scale structure and dynamic behaviors of DWs.
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Affiliation(s)
- Huaixun Huyan
- Department of Materials Science and Engineering, University of California, Irvine, CA 92697, USA
| | - Linze Li
- Department of Materials Science and Engineering, University of California, Irvine, CA 92697, USA
| | - Christopher Addiego
- Department of Physics and Astronomy, University of California, Irvine, CA 92697, USA
| | - Wenpei Gao
- Department of Materials Science and Engineering, University of California, Irvine, CA 92697, USA
| | - Xiaoqing Pan
- Department of Materials Science and Engineering, University of California, Irvine, CA 92697, USA.,Department of Physics and Astronomy, University of California, Irvine, CA 92697, USA.,Irvine Materials Research Institute, University of California, Irvine, CA 92697, USA
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12
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Sayedaghaee SO, Xu B, Prosandeev S, Paillard C, Bellaiche L. Novel Dynamical Magnetoelectric Effects in Multiferroic BiFeO_{3}. Phys Rev Lett 2019; 122:097601. [PMID: 30932533 DOI: 10.1103/physrevlett.122.097601] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/10/2018] [Revised: 01/19/2019] [Indexed: 06/09/2023]
Abstract
An atomistic effective Hamiltonian scheme is employed within molecular dynamics simulations to investigate how the electrical polarization and magnetization of the multiferroic BiFeO_{3} respond to time-dependent ac magnetic fields of various frequencies, as well as to reveal the frequency dependency of the dynamical (quadratic) magnetoelectric coefficient. We found the occurrence of vibrations having phonon frequencies in both the time dependency of the electrical polarization and magnetization (for any applied ac frequency), therefore making such vibrations of electromagnonic nature, when the homogeneous strain of the system is frozen (case 1). Moreover, the quadratic magnetoelectric coupling constant is monotonic and almost dispersionless in the sub-THz range in this case 1. In contrast, when the homogeneous strain can fully relax (case 2), two additional low-frequency and strain-mediated oscillations emerge in the time-dependent behavior of the polarization and magnetization, which result in resonances in the quadratic magnetoelectric coefficient. Such additional oscillations consist of a mixing between acoustic phonons, optical phonons, and magnons, and reflect the existence of a new quasiparticle that can be coined an "electroacoustic magnon." This latter finding can prompt experimentalists to shape their samples to take advantage of, and tune, the magnetostrictive-induced mechanical resonance frequency, in order to achieve large dynamical magnetoelectric couplings.
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Affiliation(s)
- S Omid Sayedaghaee
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
- Microelectronics-Photonics Program, University of Arkansas, Fayetteville, Arkansas 72701, USA
| | - Bin Xu
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
- School of Physical Science and Technology, Soochow University, Suzhou, Jiangsu 215006, China
| | - Sergey Prosandeev
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
- Institute of Physics and Physics Department of Southern Federal University, Rostov-na-Donu 344090, Russia
| | - Charles Paillard
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
- Laboratoire Structures, Propriétés et Modélisation des Solides, CentraleSupélec, CNRS UMR 8580, Université Paris-Saclay, 91190 Gif-sur-Yvette, France
| | - L Bellaiche
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
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13
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Li L, Jokisaari JR, Zhang Y, Cheng X, Yan X, Heikes C, Lin Q, Gadre C, Schlom DG, Chen LQ, Pan X. Control of Domain Structures in Multiferroic Thin Films through Defect Engineering. Adv Mater 2018; 30:e1802737. [PMID: 30084144 DOI: 10.1002/adma.201802737] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/29/2018] [Revised: 07/01/2018] [Indexed: 06/08/2023]
Abstract
Domain walls (DWs) have become an essential component in nanodevices based on ferroic thin films. The domain configuration and DW stability, however, are strongly dependent on the boundary conditions of thin films, which make it difficult to create complex ordered patterns of DWs. Here, it is shown that novel domain structures, that are otherwise unfavorable under the natural boundary conditions, can be realized by utilizing engineered nanosized structural defects as building blocks for reconfiguring DW patterns. It is directly observed that an array of charged defects, which are located within a monolayer thickness, can be intentionally introduced by slightly changing substrate temperature during the growth of multiferroic BiFeO3 thin films. These defects are strongly coupled to the domain structures in the pretemperature-change portion of the BiFeO3 film and can effectively change the configuration of newly grown domains due to the interaction between the polarization and the defects. Thus, two types of domain patterns are integrated into a single film without breaking the DW periodicity. The potential use of these defects for building complex patterns of conductive DWs is also demonstrated.
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Affiliation(s)
- Linze Li
- Department of Chemical Engineering and Materials Science, University of California, Irvine, CA, 92697, USA
| | - Jacob R Jokisaari
- Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, 48109, USA
| | - Yi Zhang
- Department of Chemical Engineering and Materials Science, University of California, Irvine, CA, 92697, USA
| | - Xiaoxing Cheng
- Department of Materials Science and Engineering, Penn State University, University Park, PA, 16802, USA
| | - Xingxu Yan
- Department of Chemical Engineering and Materials Science, University of California, Irvine, CA, 92697, USA
| | - Colin Heikes
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, 14853, USA
| | - Qiyin Lin
- Irvine Materials Research Institute, University of California, Irvine, CA, 92697, USA
| | - Chaitanya Gadre
- Department of Chemical Engineering and Materials Science, University of California, Irvine, CA, 92697, USA
| | - Darrell G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, 14853, USA
| | - Long-Qing Chen
- Department of Materials Science and Engineering, Penn State University, University Park, PA, 16802, USA
| | - Xiaoqing Pan
- Department of Chemical Engineering and Materials Science, University of California, Irvine, CA, 92697, USA
- Irvine Materials Research Institute, University of California, Irvine, CA, 92697, USA
- Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA
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14
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Yang X, Zeng R, Ren Z, Wu Y, Chen X, Li M, Chen J, Zhao R, Zhou D, Liao Z, Tian H, Lu Y, Li X, Li J, Han G. Single-Crystal BiFeO 3 Nanoplates with Robust Antiferromagnetism. ACS Appl Mater Interfaces 2018; 10:5785-5792. [PMID: 29368504 DOI: 10.1021/acsami.7b17449] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Freestanding and single-crystal BiFeO3 (BFO) nanoplates have been successfully synthesized by a fluoride ion-assisted hydrothermal method, and the thickness of the nanoplates can be effectively tailored from 80 to 380 nm by the concentration of fluoride ions. It is revealed that BFO nanoplates grew via an oriented attachment of layer by layer, giving rise to the formation of the inner interface within the nanoplates. In particular, antiferromagnetic (AFM) phase-transition temperature (Néel temperature, TN) of the BFO nanoplates is significantly enhanced from typical 370 to ∼512 °C, whereas the Curie temperature (TC) of the BFO nanoplates is determined to be ∼830 °C, in good agreement with a bulk value. The combination of scanning transmission electron microscopy, electron energy loss spectroscopy, and the first-principle calculations reveals that the interfacial tensile strain remarkably improves the stability of AFM ordering, accounting for the significant enhancement in TN of BFO plates. Correspondingly, the tensile strain induced the polarization and oxygen octahedral tilting has been observed near the interface. The findings presented here suggest that single-crystal BFO nanoplate is an ideal system for exploring an intrinsic magnetoelectric property, where a tensile strain can be a very promising approach to tailor AFM ordering and polarization rotation for an enhanced coupling effect.
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Affiliation(s)
- Xin Yang
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University , Hangzhou 310027, China
- Key Laboratory of Advanced Technique & Preparation for Renewable Energy Materials, Ministry of Education, Yunnan Normal University , Kunming 650500, China
| | - RongGuang Zeng
- Science and Technology on Surface Physics and Chemistry Laboratory , P.O. Box 718-35, Mianyang 621907, China
| | - ZhaoHui Ren
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University , Hangzhou 310027, China
| | - YanFei Wu
- Institute for Quantum Science and Engineering and Department of Physics, South University of Science and Technology of China , Shenzhen 518055, China
| | - Xing Chen
- Center of Electron Microscope, School of Materials Science and Engineering, Zhejiang University , Hangzhou 310027, China
| | - Ming Li
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University , Hangzhou 310027, China
| | - JiaLu Chen
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University , Hangzhou 310027, China
| | - RuoYu Zhao
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University , Hangzhou 310027, China
| | - DiKui Zhou
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University , Hangzhou 310027, China
| | - ZhiMin Liao
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University , Beijing 100871, China
| | - He Tian
- Center of Electron Microscope, School of Materials Science and Engineering, Zhejiang University , Hangzhou 310027, China
| | - YunHao Lu
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University , Hangzhou 310027, China
| | - Xiang Li
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University , Hangzhou 310027, China
| | - JiXue Li
- Center of Electron Microscope, School of Materials Science and Engineering, Zhejiang University , Hangzhou 310027, China
| | - GaoRong Han
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University , Hangzhou 310027, China
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15
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Wu SQ, Cheng S, Lu L, Liu M, Jin XW, Cheng SD, Mi SB. B-site ordering and strain-induced phase transition in double-perovskite La 2NiMnO 6 films. Sci Rep 2018; 8:2516. [PMID: 29410424 PMCID: PMC5802844 DOI: 10.1038/s41598-018-20812-4] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/07/2017] [Accepted: 01/24/2018] [Indexed: 12/05/2022] Open
Abstract
The magnetic and electrical properties of complex oxide thin films are closely related to the phase stability and cation ordering, which demands that we understand the process-structure-property relationships microscopically in functional materials research. Here we study multiferroic thin films of double-perovskite La2NiMnO6 epitaxially grown on SrTiO3, KTaO3, LaAlO3 and DyScO3 substrates by pulsed laser deposition. The effect of epitaxial strains imposed by the substrate on the microstructural properties of La2NiMnO6 has been systematically investigated by means of advanced electron microscopy. It is found that La2NiMnO6 films under tensile strain exhibit a monoclinic structure, while under compressive strain the crystal structure of La2NiMnO6 films is rhombohedral. In addition, by optimizing the film deposition conditions a long-range ordering of B-site cations in La2NiMnO6 films has been obtained in both monoclinic and rhombohedral phases. Our results not only provide a strategy for tailoring phase stability by strain engineering, but also shed light on tuning B-site ordering by controlling film growth temperature in double-perovskite La2NiMnO6 films.
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Affiliation(s)
- Sheng-Qiang Wu
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Sheng Cheng
- School of Microelectronics, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Lu Lu
- School of Microelectronics, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Ming Liu
- School of Microelectronics, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Xiao-Wei Jin
- School of Microelectronics, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Shao-Dong Cheng
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China.,School of Microelectronics, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Shao-Bo Mi
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China.
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16
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Chen D, Nelson CT, Zhu X, Serrao CR, Clarkson JD, Wang Z, Gao Y, Hsu SL, Dedon LR, Chen Z, Yi D, Liu HJ, Zeng D, Chu YH, Liu J, Schlom DG, Ramesh R. A Strain-Driven Antiferroelectric-to-Ferroelectric Phase Transition in La-Doped BiFeO 3 Thin Films on Si. Nano Lett 2017; 17:5823-5829. [PMID: 28813160 DOI: 10.1021/acs.nanolett.7b03030] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
A strain-driven orthorhombic (O) to rhombohedral (R) phase transition is reported in La-doped BiFeO3 thin films on silicon substrates. Biaxial compressive epitaxial strain is found to stabilize the rhombohedral phase at La concentrations beyond the morphotropic phase boundary (MPB). By tailoring the residual strain with film thickness, we demonstrate a mixed O/R phase structure consisting of O phase domains measuring tens of nanometers wide within a predominant R phase matrix. A combination of piezoresponse force microscopy (PFM), transmission electron microscopy (TEM), polarization-electric field hysteresis loop (P-E loop), and polarization maps reveal that the O-R structural change is an antiferroelectric to ferroelectric (AFE-FE) phase transition. Using scanning transmission electron microscopy (STEM), an atomically sharp O/R MPB is observed. Moreover, X-ray absorption spectra (XAS) and X-ray linear dichroism (XLD) measurements reveal a change in the antiferromagnetic axis orientation from out of plane (R-phase) to in plane (O-phase). These findings provide direct evidence of spin-charge-lattice coupling in La-doped BiFeO3 thin films. Furthermore, this study opens a new pathway to drive the AFE-FE O-R phase transition and provides a route to study the O/R MPB in these films.
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Affiliation(s)
- Deyang Chen
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University , Guangzhou 510006, China
- School of Materials Science and Engineering, South China University of Technology , Guangzhou 510640, China
| | | | | | | | | | - Zhe Wang
- Department of Materials Science and Engineering, Cornell University , Ithaca, New York 14853, United States
| | | | | | | | | | | | - Heng-Jui Liu
- Department of Materials Science and Engineering, National Chiao Tung University , Hsinchu 30010, Taiwan
| | - Dechang Zeng
- School of Materials Science and Engineering, South China University of Technology , Guangzhou 510640, China
| | - Ying-Hao Chu
- Department of Materials Science and Engineering, National Chiao Tung University , Hsinchu 30010, Taiwan
| | - Jian Liu
- Department of Physics and Astronomy, University of Tennessee , Knoxville, Tennessee 37996, United States
| | - Darrell G Schlom
- Department of Materials Science and Engineering, Cornell University , Ithaca, New York 14853, United States
- Kavli Institute at Cornell for Nanoscale Science , Ithaca, New York 14853, United States
| | - Ramamoorthy Ramesh
- Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States
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17
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Chauleau JY, Haltz E, Carrétéro C, Fusil S, Viret M. Multi-stimuli manipulation of antiferromagnetic domains assessed by second-harmonic imaging. Nat Mater 2017; 16:803-807. [PMID: 28481343 DOI: 10.1038/nmat4899] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/21/2016] [Accepted: 03/27/2017] [Indexed: 05/05/2023]
Abstract
Among the variety of magnetic textures available in nature, antiferromagnetism is one of the most 'discrete' because of the exact cancellation of its staggered internal magnetization. It is therefore very challenging to probe. However, its insensitivity to external magnetic perturbations, together with the intrinsic sub-picosecond dynamics, make it very appealing for tomorrow's information technologies. Thus, it is essential to understand the microscopic mechanisms governing antiferromagnetic domains to achieve accurate manipulation and control. Using optical second-harmonic generation, a unique and laboratory-available tool, we succeeded in imaging with sub-micrometre resolution both electric and antiferromagnetic orders in the model multiferroic BiFeO3. We show here that antiferromagnetic domains can be manipulated with low power consumption, using sub-coercive electric fields and sub-picosecond light pulses. Interestingly, we also show that antiferromagnetic and ferroelectric domains can behave independently, thus revealing that magneto-electric coupling can lead to various arrangements of the two orders.
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Affiliation(s)
- J-Y Chauleau
- SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-Sur-Yvette, France
| | - E Haltz
- SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-Sur-Yvette, France
| | - C Carrétéro
- Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, 91767 Palaiseau, France
| | - S Fusil
- Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, 91767 Palaiseau, France
| | - M Viret
- SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-Sur-Yvette, France
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18
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Keeney L, Downing C, Schmidt M, Pemble ME, Nicolosi V, Whatmore RW. Direct atomic scale determination of magnetic ion partition in a room temperature multiferroic material. Sci Rep 2017; 7:1737. [PMID: 28496096 DOI: 10.1038/s41598-017-01902-1] [Citation(s) in RCA: 27] [Impact Index Per Article: 3.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/06/2017] [Accepted: 04/03/2017] [Indexed: 11/09/2022] Open
Abstract
The five-layer Aurivillius phase Bi6TixFeyMnzO18 system is a rare example of a single-phase room temperature multiferroic material. To optimise its properties and exploit it for future memory storage applications, it is necessary to understand the origin of the room temperature magnetisation. In this work we use high resolution scanning transmission electron microscopy, EDX and EELS to discover how closely-packed Ti/Mn/Fe cations of similar atomic number are arranged, both within the perfect structure and within defect regions. Direct evidence for partitioning of the magnetic cations (Mn and Fe) to the central three of the five perovskite (PK) layers is presented, which reveals a marked preference for Mn to partition to the central layer. We infer this is most probably due to elastic strain energy considerations. The observed increase (>8%) in magnetic cation content at the central PK layers engenders up to a 90% increase in potential ferromagnetic spin alignments in the central layer and this could be significant in terms of creating pathways to the long-range room temperature magnetic order observed in this distinct and intriguing material system.
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19
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Agbelele A, Sando D, Toulouse C, Paillard C, Johnson RD, Rüffer R, Popkov AF, Carrétéro C, Rovillain P, Le Breton JM, Dkhil B, Cazayous M, Gallais Y, Méasson MA, Sacuto A, Manuel P, Zvezdin AK, Barthélémy A, Juraszek J, Bibes M. Strain and Magnetic Field Induced Spin-Structure Transitions in Multiferroic BiFeO 3. Adv Mater 2017; 29:1602327. [PMID: 28036128 DOI: 10.1002/adma.201602327] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/02/2016] [Revised: 09/23/2016] [Indexed: 06/06/2023]
Abstract
The magnetic-field-dependent spin ordering of strained BiFeO3 films is determined using nuclear resonant scattering and Raman spectroscopy. The critical field required to destroy the cycloidal modulation of the Fe spins is found to be significantly lower than in the bulk, with appealing implications for field-controlled spintronic and magnonic devices.
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Affiliation(s)
- A Agbelele
- Normandie Univ, UNIROUEN, INSA Rouen, CNRS, GPM, 76800, Rouen, France
| | - D Sando
- Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, 91767, Palaiseau, France
- School of Materials Science and Engineering, UNSW Australia, Sydney, NSW, 2052, Australia
| | - C Toulouse
- Laboratoire Matériaux et Phénomènes Quantiques (UMR 7162 CNRS), Université Paris Diderot-Paris 7, 75205, Paris Cedex 13, France
| | - C Paillard
- Laboratoire Structure, Propriétés et Modélisation des Solides, CentraleSupelec, CNRS-UMR8580, Université Paris-Saclay, 92290, Châtenay-Malabry, France
| | - R D Johnson
- Clarendon Laboratory, University of Oxford, Parks Road, Oxford, OX1 3PU, UK
| | - R Rüffer
- European Synchrotron Radiation Facility, CS 40220, F-38043, Grenoble Cedex 9, France
| | - A F Popkov
- Moscow Institute of Physics and Technology (State University), 141700, Dolgoprudny, Russia
- National Research University of Electronic Technology (MIET), Pas. 4806, Bld. 5, Zelenograd, 124498, Moscow, Russia
| | - C Carrétéro
- Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, 91767, Palaiseau, France
| | - P Rovillain
- Laboratoire Matériaux et Phénomènes Quantiques (UMR 7162 CNRS), Université Paris Diderot-Paris 7, 75205, Paris Cedex 13, France
| | - J-M Le Breton
- Normandie Univ, UNIROUEN, INSA Rouen, CNRS, GPM, 76800, Rouen, France
| | - B Dkhil
- Laboratoire Structure, Propriétés et Modélisation des Solides, CentraleSupelec, CNRS-UMR8580, Université Paris-Saclay, 92290, Châtenay-Malabry, France
| | - M Cazayous
- Laboratoire Matériaux et Phénomènes Quantiques (UMR 7162 CNRS), Université Paris Diderot-Paris 7, 75205, Paris Cedex 13, France
| | - Y Gallais
- Laboratoire Matériaux et Phénomènes Quantiques (UMR 7162 CNRS), Université Paris Diderot-Paris 7, 75205, Paris Cedex 13, France
| | - M-A Méasson
- Laboratoire Matériaux et Phénomènes Quantiques (UMR 7162 CNRS), Université Paris Diderot-Paris 7, 75205, Paris Cedex 13, France
| | - A Sacuto
- Laboratoire Matériaux et Phénomènes Quantiques (UMR 7162 CNRS), Université Paris Diderot-Paris 7, 75205, Paris Cedex 13, France
| | - P Manuel
- ISIS Facility, STFC, Rutherford Appleton Laboratory, Didcot, OX11 0QX, UK
| | - A K Zvezdin
- Moscow Institute of Physics and Technology (State University), 141700, Dolgoprudny, Russia
- Prokhorov General Physics Institute, Russian Academy of Sciences, 119991, Moscow, Russia
- Russian Quantum Center, Skolkovo, Moscow, 143025, Russia
| | - A Barthélémy
- Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, 91767, Palaiseau, France
| | - J Juraszek
- Normandie Univ, UNIROUEN, INSA Rouen, CNRS, GPM, 76800, Rouen, France
| | - M Bibes
- Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, 91767, Palaiseau, France
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20
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Damodaran AR, Agar JC, Pandya S, Chen Z, Dedon L, Xu R, Apgar B, Saremi S, Martin LW. New modalities of strain-control of ferroelectric thin films. J Phys Condens Matter 2016; 28:263001. [PMID: 27187744 DOI: 10.1088/0953-8984/28/26/263001] [Citation(s) in RCA: 23] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Ferroelectrics, with their spontaneous switchable electric polarization and strong coupling between their electrical, mechanical, thermal, and optical responses, provide functionalities crucial for a diverse range of applications. Over the past decade, there has been significant progress in epitaxial strain engineering of oxide ferroelectric thin films to control and enhance the nature of ferroelectric order, alter ferroelectric susceptibilities, and to create new modes of response which can be harnessed for various applications. This review aims to cover some of the most important discoveries in strain engineering over the past decade and highlight some of the new and emerging approaches for strain control of ferroelectrics. We discuss how these new approaches to strain engineering provide promising routes to control and decouple ferroelectric susceptibilities and create new modes of response not possible in the confines of conventional strain engineering. To conclude, we will provide an overview and prospectus of these new and interesting modalities of strain engineering helping to accelerate their widespread development and implementation in future functional devices.
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Affiliation(s)
- Anoop R Damodaran
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, California, USA
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21
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Sando D, Yang Y, Bousquet E, Carrétéro C, Garcia V, Fusil S, Dolfi D, Barthélémy A, Ghosez P, Bellaiche L, Bibes M. Large elasto-optic effect and reversible electrochromism in multiferroic BiFeO3. Nat Commun 2016; 7:10718. [PMID: 26923332 PMCID: PMC4773452 DOI: 10.1038/ncomms10718] [Citation(s) in RCA: 26] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/02/2015] [Accepted: 01/14/2016] [Indexed: 11/09/2022] Open
Abstract
The control of optical fields is usually achieved through the electro-optic or acousto-optic effect in single-crystal ferroelectric or polar compounds such as LiNbO3 or quartz. In recent years, tremendous progress has been made in ferroelectric oxide thin film technology—a field which is now a strong driving force in areas such as electronics, spintronics and photovoltaics. Here, we apply epitaxial strain engineering to tune the optical response of BiFeO3 thin films, and find a very large variation of the optical index with strain, corresponding to an effective elasto-optic coefficient larger than that of quartz. We observe a concomitant strain-driven variation in light absorption—reminiscent of piezochromism—which we show can be manipulated by an electric field. This constitutes an electrochromic effect that is reversible, remanent and not driven by defects. These findings broaden the potential of multiferroics towards photonics and thin film acousto-optic devices, and suggest exciting device opportunities arising from the coupling of ferroic, piezoelectric and optical responses. Modern technology such as electronics and photovoltaics requires careful control of optical responses of electronic properties. Here, Sando et al. demonstrate a large variation of optical index and light absorption in multiferroic material BiFeO3 thin films, tunable by in-film strain or electric field.
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Affiliation(s)
- D Sando
- Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, 91767 Palaiseau, France
| | - Yurong Yang
- Department of Physics and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
| | - E Bousquet
- Theoretical Materials Physics, Université de Liège, B-5, B-4000 Sart-Tilman, Belgium
| | - C Carrétéro
- Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, 91767 Palaiseau, France
| | - V Garcia
- Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, 91767 Palaiseau, France
| | - S Fusil
- Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, 91767 Palaiseau, France
| | - D Dolfi
- Thales Research and Technology France, 1 Avenue Augustin Fresnel, 91767 Palaiseau, France
| | - A Barthélémy
- Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, 91767 Palaiseau, France
| | - Ph Ghosez
- Theoretical Materials Physics, Université de Liège, B-5, B-4000 Sart-Tilman, Belgium
| | - L Bellaiche
- Department of Physics and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
| | - M Bibes
- Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, 91767 Palaiseau, France
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Hu JM, Chen LQ, Nan CW. Multiferroic Heterostructures Integrating Ferroelectric and Magnetic Materials. Adv Mater 2016; 28:15-39. [PMID: 26551616 DOI: 10.1002/adma.201502824] [Citation(s) in RCA: 90] [Impact Index Per Article: 11.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/11/2015] [Revised: 08/18/2015] [Indexed: 06/05/2023]
Abstract
Multiferroic heterostructures can be synthesized by integrating monolithic ferroelectric and magnetic materials, with interfacial coupling between electric polarization and magnetization, through the exchange of elastic, electric, and magnetic energy. Although the nature of the interfaces remains to be unraveled, such cross coupling can be utilized to manipulate the magnetization (or polarization) with an electric (or magnetic) field, known as a converse (or direct) magnetoelectric effect. It can be exploited to significantly improve the performance of or/and add new functionalities to many existing or emerging devices such as memory devices, tunable microwave devices, sensors, etc. The exciting technological potential, along with the rich physical phenomena at the interface, has sparked intensive research on multiferroic heterostructures for more than a decade. Here, we summarize the most recent progresses in the fundamental principles and potential applications of the interface-based magnetoelectric effect in multiferroic heterostructures, and present our perspectives on some key issues that require further study in order to realize their practical device applications.
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Affiliation(s)
- Jia-Mian Hu
- State Key Laboratory of New Ceramics and Fine Processing and School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, 16802, USA
| | - Long-Qing Chen
- State Key Laboratory of New Ceramics and Fine Processing and School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, 16802, USA
| | - Ce-Wen Nan
- State Key Laboratory of New Ceramics and Fine Processing and School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
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23
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Tong WY, Ding HC, Gong SJ, Wan X, Duan CG. Magnetic ordering induced giant optical property change in tetragonal BiFeO3. Sci Rep 2015; 5:17993. [PMID: 26648508 DOI: 10.1038/srep17993] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/28/2015] [Accepted: 11/10/2015] [Indexed: 11/25/2022] Open
Abstract
Magnetic ordering could have significant influence on band structures, spin-dependent transport, and other important properties of materials. Its measurement, especially for the case of antiferromagnetic (AFM) ordering, however, is generally difficult to be achieved. Here we demonstrate the feasibility of magnetic ordering detection using a noncontact and nondestructive optical method. Taking the tetragonal BiFeO3 (BFO) as an example and combining density functional theory calculations with tight-binding models, we find that when BFO changes from C1-type to G-type AFM phase, the top of valance band shifts from the Z point to Γ point, which makes the original direct band gap become indirect. This can be explained by Slater-Koster parameters using the Harrison approach. The impact of magnetic ordering on band dispersion dramatically changes the optical properties. For the linear ones, the energy shift of the optical band gap could be as large as 0.4 eV. As for the nonlinear ones, the change is even larger. The second-harmonic generation coefficient d33 of G-AFM becomes more than 13 times smaller than that of C1-AFM case. Finally, we propose a practical way to distinguish the two AFM phases of BFO using the optical method, which is of great importance in next-generation information storage technologies.
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24
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Wang PS, Ren W, Bellaiche L, Xiang HJ. Predicting a ferrimagnetic phase of Zn(2)FeOsO(6) with strong magnetoelectric coupling. Phys Rev Lett 2015; 114:147204. [PMID: 25910159 DOI: 10.1103/physrevlett.114.147204] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/01/2014] [Indexed: 06/04/2023]
Abstract
Multiferroic materials, in which ferroelectric and magnetic ordering coexist, are of practical interest for the development of novel memory devices that allow for electrical writing and nondestructive magnetic readout operation. The great challenge is to create room temperature multiferroic materials with strongly coupled ferroelectric and ferromagnetic (or ferrimagnetic) orderings. BiFeO_{3} is the most heavily investigated single-phase multiferroic to date due to the coexistence of its magnetic order and ferroelectric order at room temperature. However, there is no net magnetic moment in the cycloidal (antiferromagneticlike) magnetic state of bulk BiFeO_{3}, which severely limits its realistic applications in electric field controlled memory devices. Here, we predict that LiNbO_{3}-type Zn_{2}FeOsO_{6} is a new multiferroic with properties superior to BiFeO_{3}. First, there are strong ferroelectricity and strong ferrimagnetism at room temperature in Zn_{2}FeOsO_{6}. Second, the easy plane of the spontaneous magnetization can be switched by an external electric field, evidencing the strong magnetoelectric coupling existing in this system. Our results suggest that ferrimagnetic 3d-5d LiNbO_{3}-type material may therefore be used to achieve voltage control of magnetism in future memory devices.
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Affiliation(s)
- P S Wang
- Key Laboratory of Computational Physical Sciences (Ministry of Education), State Key Laboratory of Surface Physics, Collaborative Innovation Center of Advanced Microstructures, and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China
| | - W Ren
- Department of Physics, and International Center of Quantum and Molecular Structures, Shanghai University, Shanghai 200444, People's Republic of China
| | - L Bellaiche
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
| | - H J Xiang
- Key Laboratory of Computational Physical Sciences (Ministry of Education), State Key Laboratory of Surface Physics, Collaborative Innovation Center of Advanced Microstructures, and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China
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25
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Abstract
The celebrated renaissance of the multiferroics family over the past ten years has also been that of its most paradigmatic member, bismuth ferrite (BiFeO3). Known since the 1960s to be a high temperature antiferromagnet and since the 1970s to be ferroelectric, BiFeO3 only had its bulk ferroic properties clarified in the mid-2000s. It is however the fabrication of BiFeO3 thin films and their integration into epitaxial oxide heterostructures that have fully revealed its extraordinarily broad palette of functionalities. Here we review the first decade of research on BiFeO3 films, restricting ourselves to epitaxial structures. We discuss how thickness and epitaxial strain influence not only the unit cell parameters, but also the crystal structure, illustrated for instance by the discovery of the so-called T-like phase of BiFeO3. We then present its ferroelectric and piezoelectric properties and their evolution near morphotropic phase boundaries. Magnetic properties and their modification by thickness and strain effects, as well as optical parameters, are covered. Finally, we highlight various types of devices based on BiFeO3 in electronics, spintronics, and optics, and provide perspectives for the development of further multifunctional devices for information technology and energy harvesting.
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Affiliation(s)
- D Sando
- Unité Mixte de Physique CNRS/Thales, 1 Avenue Fresnel, Campus de l'Ecole Polytechnique, 91767 Palaiseau, France, and Université Paris Sud, 91405 Orsay, France. Center for Correlated Electron Systems, Institute for Basic Science (IBS), and Department of Physics and Astronomy, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 151-747, Republic of Korea
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26
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Huang C, Chen L. Effects of Interfaces on the Structure and Novel Physical Properties in Epitaxial Multiferroic BiFeO₃ Ultrathin Films. Materials (Basel) 2014; 7:5403-26. [PMID: 28788135 DOI: 10.3390/ma7075403] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/29/2014] [Revised: 06/29/2014] [Accepted: 07/04/2014] [Indexed: 11/21/2022]
Abstract
In functional oxide films, different electrical/mechanical boundaries near film surfaces induce rich phase diagrams and exotic phenomena. In this paper, we review some key points which underpin structure, phase transition and related properties in BiFeO3 ultrathin films. Compared with the bulk counterparts, we survey the recent results of epitaxial BiFeO3 ultrathin films to illustrate how the atomic structure and phase are markedly influenced by the interface between the film and the substrate, and to emphasize the roles of misfit strain and depolarization field on determining the domain patterns, phase transformation and associated physical properties of BiFeO3 ultrathin films, such as polarization, piezoelectricity, and magnetism. One of the obvious consequences of the misfit strain on BiFeO3 ultrathin films is the emergence of a sequence of phase transition from tetragonal to mixed tetragonal & rhombohedral, the rhombohedral, mixed rhombohedral & orthorhombic, and finally orthorhombic phases. Other striking features of this system are the stable domain patterns and the crossover of 71° and 109° domains with different electrical boundary conditions on the film surface, which can be controlled and manipulated through the depolarization field. The external field-sensitive enhancements of properties for BiFeO3 ultrathin films, including the polarization, magnetism and morphotropic phase boundary-relevant piezoelectric response, offer us deeper insights into the investigations of the emergent properties and phenomena of epitaxial ultrathin films under various mechanical/electrical constraints. Finally, we briefly summarize the recent progress and list open questions for future study on BiFeO3 ultrathin films.
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27
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Janolin PE, Anokhin AS, Gui Z, Mukhortov VM, Golovko YI, Guiblin N, Ravy S, El Marssi M, Yuzyuk YI, Bellaiche L, Dkhil B. Strain engineering of perovskite thin films using a single substrate. J Phys Condens Matter 2014; 26:292201. [PMID: 24961271 DOI: 10.1088/0953-8984/26/29/292201] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
Combining temperature-dependent x-ray diffraction, Raman spectroscopy and first-principles-based effective Hamiltonian calculations, we show that varying the thickness of (Ba0.8Sr0.2)TiO3 (BST) thin films deposited on the same single substrate (namely, MgO) enables us to change not only the magnitude but also the sign of the misfit strain. Such previously overlooked control of the strain allows several properties of these films (e.g. Curie temperature, symmetry of ferroelectric phases, dielectric response) to be tuned and even optimized. Surprisingly, such desired control of the strain (and of the resulting properties) originates from an effect that is commonly believed to be detrimental to functionalities of films, namely the existence of misfit dislocations. The present study therefore provides a novel route to strain engineering, as well as leading us to revisit common beliefs.
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Affiliation(s)
- P-E Janolin
- Laboratoire Structures, Propriétés et Modélisation des Solides, UMR CNRS-École Centrale Paris, Grande Voie des Vignes, 92295 Châtenay-Malabry Cedex, France
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28
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Zhu Y, Liu P, Yu R, Hsieh YH, Ke D, Chu YH, Zhan Q. Orientation-tuning in self-assembled heterostructures induced by a buffer layer. Nanoscale 2014; 6:5126-5131. [PMID: 24727857 DOI: 10.1039/c3nr06664a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
Anisotropic nano-plate structures in self-assembled perovskite-spinel thin films, BiFeO3-NiFe2O4 and BiFeO3-CoFe2O4, which were deposited on (001)c SrRuO3/SrTiO3 and DyScO3 substrates, respectively, have been demonstrated using transmission electron microscopy combined with strain analysis. Unlike the unitary cube-on-cube orientation relationship reported widely, the growth direction of the CoFe2O4 and NiFe2O4 plates was tuned to [011]c while the BiFeO3 matrix kept [001]c in both systems. In particular, a thin stress-sensitive BiFeO3 buffer layer between the spinel nanostructure and the substrate was introduced for providing a complex strain state in both film systems. The novel orientation tuning and the pattern configuration of the heterostructures are mainly attributed to the strain imposed on the films and the anisotropic ledge growth mechanism of spinels.
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Affiliation(s)
- Yuanmin Zhu
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China.
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29
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Bhattacharjee S, Rahmedov D, Wang D, Iñiguez J, Bellaiche L. Ultrafast switching of the electric polarization and magnetic chirality in BiFeO3 by an electric field. Phys Rev Lett 2014; 112:147601. [PMID: 24766014 DOI: 10.1103/physrevlett.112.147601] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/27/2013] [Indexed: 06/03/2023]
Abstract
Using a first-principles-based effective Hamiltonian within molecular dynamics simulations, we discover that applying an electric field that is opposite to the initial direction of the polarization results in a switching of both the polarization and the magnetic chirality vector of multiferroic BiFeO3 at an ultrafast pace (namely, of the order of picoseconds). We discuss the origin of such a double ultrafast switching, which is found to involve original intermediate magnetic states and may hold promise for designing various devices.
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Affiliation(s)
- Satadeep Bhattacharjee
- Department of Physics and Institute for Nanoscience and Engineering, University of Arkansas Fayetteville, Arkansas 72701, USA
| | - Dovran Rahmedov
- Department of Physics and Institute for Nanoscience and Engineering, University of Arkansas Fayetteville, Arkansas 72701, USA
| | - Dawei Wang
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, China
| | - Jorge Iñiguez
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Spain
| | - L Bellaiche
- Department of Physics and Institute for Nanoscience and Engineering, University of Arkansas Fayetteville, Arkansas 72701, USA
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30
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Wang JJ, Hu JM, Yang TN, Feng M, Zhang JX, Chen LQ, Nan CW. Effect of strain on voltage-controlled magnetism in BiFeO₃-based heterostructures. Sci Rep 2014; 4:4553. [PMID: 24686503 PMCID: PMC3971450 DOI: 10.1038/srep04553] [Citation(s) in RCA: 43] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/13/2014] [Accepted: 03/14/2014] [Indexed: 11/24/2022] Open
Abstract
Voltage-modulated magnetism in magnetic/BiFeO3 heterostructures can be driven by a combination of the intrinsic ferroelectric-antiferromagnetic coupling in BiFeO3 and the antiferromagnetic-ferromagnetic exchange interaction across the heterointerface. However, ferroelectric BiFeO3 film is also ferroelastic, thus it is possible to generate voltage-induced strain in BiFeO3 that could be applied onto the magnetic layer across the heterointerface and modulate magnetism through magnetoelastic coupling. Here, we investigated, using phase-field simulations, the role of strain in voltage-controlled magnetism for these BiFeO3-based heterostructures. It is predicted, under certain condition, coexistence of strain and exchange interaction will result in a pure voltage-driven 180° magnetization reversal in BiFeO3-based heterostructures.
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Affiliation(s)
- J J Wang
- 1] State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China [2]
| | - J M Hu
- 1] State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China [2] Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania, 16802, USA [3]
| | - T N Yang
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania, 16802, USA
| | - M Feng
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - J X Zhang
- Department of Physics, Beijing Normal University, Beijing, 100875, China
| | - L Q Chen
- 1] State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China [2] Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania, 16802, USA
| | - C W Nan
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
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31
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Sando D, Agbelele A, Daumont C, Rahmedov D, Ren W, Infante IC, Lisenkov S, Prosandeev S, Fusil S, Jacquet E, Carrétéro C, Petit S, Cazayous M, Juraszek J, Le Breton JM, Bellaiche L, Dkhil B, Barthélémy A, Bibes M. Control of ferroelectricity and magnetism in multi-ferroic BiFeO3 by epitaxial strain. Philos Trans A Math Phys Eng Sci 2014; 372:20120438. [PMID: 24421372 PMCID: PMC3895974 DOI: 10.1098/rsta.2012.0438] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/04/2023]
Abstract
Recently, strain engineering has been shown to be a powerful and flexible means of tailoring the properties of ABO3 perovskite thin films. The effect of epitaxial strain on the structure of the perovskite unit cell can induce a host of interesting effects, these arising from either polar cation shifts or rotation of the oxygen octahedra, or both. In the multi-ferroic perovskite bismuth ferrite (BiFeO3-BFO), both degrees of freedom exist, and thus a complex behaviour may be expected as one plays with epitaxial strain. In this paper, we review our results on the role of strain on the ferroic transition temperatures and ferroic order parameters. We find that, while the Néel temperature is almost unchanged by strain, the ferroelectric Curie temperature strongly decreases as strain increases in both the tensile and compressive ranges. Also unexpected is the very weak influence of strain on the ferroelectric polarization value. Using effective Hamiltonian calculations, we show that these peculiar behaviours arise from the competition between antiferrodistortive and polar instabilities. Finally, we present results on the magnetic order: while the cycloidal spin modulation present in the bulk survives in weakly strained films, it is destroyed at large strain and replaced by pseudo-collinear antiferromagnetic ordering. We discuss the origin of this effect and give perspectives for devices based on strain-engineered BiFeO3.
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Affiliation(s)
- D. Sando
- Unité Mixte de Physique CNRS-Thales, 1 Av. A. Fresnel, 91767 Palaiseau, and Université Paris-Sud, 91405 Orsay, France
| | - A. Agbelele
- Groupe de Physique des Matériaux, UMR6634 CNRS-Université de Rouen, 76801 St. Etienne du Rouvray, France
| | - C. Daumont
- Unité Mixte de Physique CNRS-Thales, 1 Av. A. Fresnel, 91767 Palaiseau, and Université Paris-Sud, 91405 Orsay, France
| | - D. Rahmedov
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR 72701, USA
| | - W. Ren
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR 72701, USA
| | - I. C. Infante
- Laboratoire Structures, Propriétés et Modélisation des Solides, UMR 8580 CNRS-Ecole Centrale Paris, Grande Voie des Vignes, 92295 Châtenay-Malabry Cedex, France
| | - S. Lisenkov
- Department of Physics, University of South Florida, Tampa, FL 33647, USA
| | - S. Prosandeev
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR 72701, USA
| | - S. Fusil
- Unité Mixte de Physique CNRS-Thales, 1 Av. A. Fresnel, 91767 Palaiseau, and Université Paris-Sud, 91405 Orsay, France
| | - E. Jacquet
- Unité Mixte de Physique CNRS-Thales, 1 Av. A. Fresnel, 91767 Palaiseau, and Université Paris-Sud, 91405 Orsay, France
| | - C. Carrétéro
- Unité Mixte de Physique CNRS-Thales, 1 Av. A. Fresnel, 91767 Palaiseau, and Université Paris-Sud, 91405 Orsay, France
| | - S. Petit
- Laboratoire Léon Brillouin, CEA/CNRS UMR12, 91191 Gif-sur-Yvette, France
| | - M. Cazayous
- Laboratoire Matériaux et Phénomènes Quantiques (UMR 7162 CNRS), Université Paris Diderot-Paris 7, 75205 Paris cedex 13, France
| | - J. Juraszek
- Groupe de Physique des Matériaux, UMR6634 CNRS-Université de Rouen, 76801 St. Etienne du Rouvray, France
| | - J.-M. Le Breton
- Groupe de Physique des Matériaux, UMR6634 CNRS-Université de Rouen, 76801 St. Etienne du Rouvray, France
| | - L. Bellaiche
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR 72701, USA
| | - B. Dkhil
- Laboratoire Structures, Propriétés et Modélisation des Solides, UMR 8580 CNRS-Ecole Centrale Paris, Grande Voie des Vignes, 92295 Châtenay-Malabry Cedex, France
| | - A. Barthélémy
- Unité Mixte de Physique CNRS-Thales, 1 Av. A. Fresnel, 91767 Palaiseau, and Université Paris-Sud, 91405 Orsay, France
| | - M. Bibes
- Unité Mixte de Physique CNRS-Thales, 1 Av. A. Fresnel, 91767 Palaiseau, and Université Paris-Sud, 91405 Orsay, France
- e-mail:
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Zhao YJ, Yin ZG, Zhang XW, Fu Z, Sun BJ, Wang JX, Wu JL. Heteroepitaxy of tetragonal BiFeO(3) on hexagonal sapphire(0001). ACS Appl Mater Interfaces 2014; 6:2639-2646. [PMID: 24467526 DOI: 10.1021/am405115y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
Highly elongated BiFeO3 is epitaxially grown on hexagonal sapphire(0001) substrate within a rather narrow synthesis window. Both X-ray reciprocal space maps and Raman characterizations reveal that it is of true tetragonal symmetry but not the commonly observed MC type monoclinic structure. The tetragonal BiFeO3 film exhibits an island growth mode, with the island edges oriented parallel to the ⟨10-10⟩ and ⟨12-30⟩ directions of the sapphire substrate. With increasing deposition time, a transition from square island to elongated island and then to a continuous film is observed. The metastable tetragonal phase can remain on the substrate without relaxation to the thermally stable rhombohedral phase up to a critical thickness of 450 nm, providing an exciting opportunity for practicable lead-free ferroelectrics. These results facilitate a better understanding of the phase stability of BiFeO3 polymorphs and enrich the knowledge about the heteroepitaxial growth mechanism of functional oxides on symmetry-mismatched substrates.
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Affiliation(s)
- Y J Zhao
- Key Lab of Semiconductor Materials Science and ‡State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, People's Republic of China
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33
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Akbashev AR, Chen G, Spanier JE. A facile route for producing single-crystalline epitaxial perovskite oxide thin films. Nano Lett 2014; 14:44-49. [PMID: 24063419 DOI: 10.1021/nl4030038] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
We report how a low vacuum pressure process followed by a few-minute annealing enables epitaxial stabilization, producing high-quality, phase-pure, single-crystalline epitaxial, and misfit dislocation-free BiFeO3(001) thin films on SrTiO3(001) at ∼450 °C less than current routes. These results unambiguously challenge the widely held notion that atomic layer deposition (ALD) is not appropriate for attaining high-quality chemically complex oxide films on perovskite substrates in single-crystalline epitaxial form, demonstrating applicability as an inexpensive, facile, and highly scalable route.
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Affiliation(s)
- Andrew R Akbashev
- Department of Materials Science and Engineering, Drexel University , Philadelphia, Pennsylvania 19104, United States
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34
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Wojdeł JC, Hermet P, Ljungberg MP, Ghosez P, Íñiguez J. First-principles model potentials for lattice-dynamical studies: general methodology and example of application to ferroic perovskite oxides. J Phys Condens Matter 2013; 25:305401. [PMID: 23828610 DOI: 10.1088/0953-8984/25/30/305401] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
We present a scheme to construct model potentials, with parameters computed from first principles, for large-scale lattice-dynamical simulations of materials. We mimic the traditional solid-state approach to the investigation of vibrational spectra, i.e., we start from a suitably chosen reference configuration of the compound and describe its energy as a function of arbitrary atomic distortions by means of a Taylor series. Such a form of the potential-energy surface is general, trivial to formulate for any material, and physically transparent. Further, such models involve clear-cut approximations, their precision can be improved in a systematic fashion, and their simplicity allows for convenient and practical strategies to compute/fit the potential parameters. We illustrate our scheme with two challenging cases in which the model potential is strongly anharmonic, namely, the ferroic perovskite oxides PbTiO3 and SrTiO3. Studying these compounds allows us to better describe the connection between the so-called effective-Hamiltonian method and ours (which may be seen as an extension of the former), and to show the physical insight and predictive power provided by our approach-e.g., we present new results regarding the factors controlling phase-transition temperatures, novel phase transitions under elastic constraints, an improved treatment of thermal expansion, etc.
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Affiliation(s)
- Jacek C Wojdeł
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, E-08193 Bellaterra, Spain
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35
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Sando D, Agbelele A, Rahmedov D, Liu J, Rovillain P, Toulouse C, Infante IC, Pyatakov AP, Fusil S, Jacquet E, Carrétéro C, Deranlot C, Lisenkov S, Wang D, Le Breton JM, Cazayous M, Sacuto A, Juraszek J, Zvezdin AK, Bellaiche L, Dkhil B, Barthélémy A, Bibes M. Crafting the magnonic and spintronic response of BiFeO3 films by epitaxial strain. Nat Mater 2013; 12:641-6. [PMID: 23624631 DOI: 10.1038/nmat3629] [Citation(s) in RCA: 41] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/22/2012] [Accepted: 03/12/2013] [Indexed: 05/05/2023]
Abstract
Multiferroics are compounds that show ferroelectricity and magnetism. BiFeO3, by far the most studied, has outstanding ferroelectric properties, a cycloidal magnetic order in the bulk, and many unexpected virtues such as conductive domain walls or a low bandgap of interest for photovoltaics. Although this flurry of properties makes BiFeO3 a paradigmatic multifunctional material, most are related to its ferroelectric character, and its other ferroic property--antiferromagnetism--has not been investigated extensively, especially in thin films. Here we bring insight into the rich spin physics of BiFeO3 in a detailed study of the static and dynamic magnetic response of strain-engineered films. Using Mössbauer and Raman spectroscopies combined with Landau-Ginzburg theory and effective Hamiltonian calculations, we show that the bulk-like cycloidal spin modulation that exists at low compressive strain is driven towards pseudo-collinear antiferromagnetism at high strain, both tensile and compressive. For moderate tensile strain we also predict and observe indications of a new cycloid. Accordingly, we find that the magnonic response is entirely modified, with low-energy magnon modes being suppressed as strain increases. Finally, we reveal that strain progressively drives the average spin angle from in-plane to out-of-plane, a property we use to tune the exchange bias and giant-magnetoresistive response of spin valves.
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Affiliation(s)
- D Sando
- Unité Mixte de Physique CNRS/Thales, 1 av. Fresnel, 91767 Palaiseau & Université Paris-Sud, 91405 Orsay, France
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36
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Ren W, Yang Y, Diéguez O, Iñiguez J, Choudhury N, Bellaiche L. Ferroelectric domains in multiferroic BiFeO3 films under epitaxial strains. Phys Rev Lett 2013; 110:187601. [PMID: 23683243 DOI: 10.1103/physrevlett.110.187601] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/18/2012] [Indexed: 06/02/2023]
Abstract
First-principles calculations are performed to investigate energetic and atomistic characteristics of ferroelectric domains walls (DWs) of BiFeO(3) (BFO) films subject to compressive strain. Significantly lower DW energies than those previously reported, and a different energetic hierarchy between the various DW types, are found for small strains. In all investigated cases (corresponding to ideal angles of 71°, 109°, and 180° formed by the domain polarizations), the DW energy reaches its maximum value for misfit strains that are around the critical strain at which the transition between the R-like and T-like phases occurs in single-domain BFO. Near these strains, several quantities depend strongly on the type of domain wall; such distinct behavior is associated with an elastic difference and a large out-of-plane polarization at the DW in the 180° case. A further increase of the magnitude of the strain leads to (i) a change of hierarchy of the DW energies, (ii) large out-of-plane polarizations inside each up and down domain, and (iii) novel atomic arrangements at the domain walls. Our study can thus initiate a new research direction, namely strain engineering of domain-wall functionalities.
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Affiliation(s)
- Wei Ren
- Department of Physics, Shanghai University, 99 Shangda Road, Shanghai 200444, China.
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37
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Liu M, Hoffman J, Wang J, Zhang J, Nelson-Cheeseman B, Bhattacharya A. Non-volatile ferroelastic switching of the Verwey transition and resistivity of epitaxial Fe3O4/PMN-PT (011). Sci Rep 2013; 3:1876. [PMID: 23703150 PMCID: PMC3662216 DOI: 10.1038/srep01876] [Citation(s) in RCA: 138] [Impact Index Per Article: 12.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/27/2013] [Accepted: 03/28/2013] [Indexed: 11/09/2022] Open
Abstract
A central goal of electronics based on correlated materials or 'Mottronics' is the ability to switch between distinct collective states with a control voltage. Small changes in structure and charge density near a transition can tip the balance between competing phases, leading to dramatic changes in electronic and magnetic properties. In this work, we demonstrate that an electric field induced two-step ferroelastic switching pathway in (011) oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates can be used to tune the Verwey metal-insulator transition in epitaxial Fe3O4 films in a stable and reversible manner. We also observe robust non-volatile resistance switching in Fe3O4 up to room temperature, driven by ferroelastic strain. These results provides a framework for realizing non-volatile and reversible tuning of order parameters coupled to lattice-strain in epitaxial oxide heterostructures over a broad range of temperatures, with potential device applications.
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Affiliation(s)
- Ming Liu
- Center for Nanoscale Materials, Argonne National Laboratory, Argonne, IL 60439 (USA)
| | - Jason Hoffman
- Material Science Division, Argonne National Laboratory, Argonne, IL 60439 (USA)
| | - Jing Wang
- Department of Physics, Beijing Normal University, Beijing 100875 (China)
| | - Jinxing Zhang
- Department of Physics, Beijing Normal University, Beijing 100875 (China)
| | | | - Anand Bhattacharya
- Center for Nanoscale Materials, Argonne National Laboratory, Argonne, IL 60439 (USA)
- Material Science Division, Argonne National Laboratory, Argonne, IL 60439 (USA)
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38
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Rault JE, Ren W, Prosandeev S, Lisenkov S, Sando D, Fusil S, Bibes M, Barthélémy A, Bellaiche L, Barrett N. Thickness-dependent polarization of strained BiFeO3 films with constant tetragonality. Phys Rev Lett 2012; 109:267601. [PMID: 23368620 DOI: 10.1103/physrevlett.109.267601] [Citation(s) in RCA: 25] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/17/2012] [Indexed: 06/01/2023]
Abstract
We measure the ferroelectric polarization of BiFeO3 films down to 3.6 nm using low energy electron and photoelectron emission microscopy. The measured polarization decays strongly below a critical thickness of 5-7 nm predicted by continuous medium theory whereas the tetragonal distortion does not change. We resolve this apparent contradiction using first-principles-based effective Hamiltonian calculations. In ultrathin films, the energetics of near open circuit electrical boundary conditions, i.e., an unscreened depolarizing field, drive the system through a phase transition from single out-of-plane polarization to nanoscale stripe domains. It gives rise to an average polarization close to zero as measured by the electron microscopy while maintaining the relatively large tetragonal distortion imposed by the nonzero polarization state of each individual domain.
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Affiliation(s)
- J E Rault
- CEA, DSM/IRAMIS/SPCSI, F-91191 Gif-sur-Yvette Cedex, France
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39
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Yang JC, He Q, Suresha SJ, Kuo CY, Peng CY, Haislmaier RC, Motyka MA, Sheng G, Adamo C, Lin HJ, Hu Z, Chang L, Tjeng LH, Arenholz E, Podraza NJ, Bernhagen M, Uecker R, Schlom DG, Gopalan V, Chen LQ, Chen CT, Ramesh R, Chu YH. Orthorhombic BiFeO3. Phys Rev Lett 2012; 109:247606. [PMID: 23368382 DOI: 10.1103/physrevlett.109.247606] [Citation(s) in RCA: 19] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/03/2012] [Revised: 09/07/2012] [Indexed: 05/12/2023]
Abstract
A new orthorhombic phase of the multiferroic BiFeO3 has been created via strain engineering by growing it on a NdScO(3)(110)(o) substrate. The tensile-strained orthorhombic BiFeO3 phase is ferroelectric and antiferromagnetic at room temperature. A combination of nonlinear optical second harmonic generation and piezoresponse force microscopy revealed that the ferroelectric polarization in the orthorhombic phase is along the in-plane {110}(pc) directions. In addition, the corresponding rotation of the antiferromagnetic axis in this new phase was observed using x-ray linear dichroism.
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Affiliation(s)
- J C Yang
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
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40
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Abstract
In functional materials, nanoscale phase boundaries exhibit exotic phenomena that are notably absent in their parent phases. Over the past two decades, much of the research into complex oxides (such as cuprate superconductors, CMR manganites and relaxor ferroelectrics) has demonstrated the key role that nanoscale inhomogeneities play in controlling the electronic and/or ionic structure of these materials. One of the key characteristics in such systems is the strong susceptibility to external perturbations, such as magnetic, electric and mechanical fields. A direct consequence of the accommodation of a large number of cationic substitutions in complex oxides is the emergence of a number of physical phenomena from essentially the same crystal framework. Recently, multiferroic behavior, which is characterized by the co-existence and potential coupling of multiple ferroic order parameters, has captured considerable worldwide research interest. The perovskite, BiFeO(3), exhibits robust ferroelectricity coupled with antiferromagnetism at room temperature. A rather unique feature of this material system is its ability to "morph" its ground state when an external mechanical constraint is imposed on it. A particularly striking example is observed when a large (~4 to 5%) compressive strain is imposed on a thin film through the epitaxial constraint from the underlying substrate. Under these conditions, the ground state rhombohedral phase transforms into a tetragonal-like (or a derivative thereof) phase with a rather large unit cell (c/a ratio of ~1.26). When the epitaxial constraint is partially relaxed by increasing the film thickness, this tetragonal-like phase evolves into a "mixed-phase" state, consisting of a nanoscale admixture of the rhombohedral-like phase embedded in the tetragonal-like phase. Such a system gives us a new pathway to explore a variety of mechanical, magnetic and transport phenomena in constrained dimensions. This article reviews our progress to date in this direction and also captures some possible areas of future research. We use the electromechanical response and the magnetic properties as examples to illustrate that its novel functionalities are intrinsically due to the phase boundaries and not the constituent phases. The possible origin of the giant piezoelectric response and enhanced magnetic moment across the boundaries is proposed based on the flexoelectric and flexomagnetic effects.
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Affiliation(s)
- J X Zhang
- Department of Physics, University of California, Berkeley, California 94720, USA.
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41
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Wang D, Weerasinghe J, Bellaiche L. Atomistic molecular dynamic simulations of multiferroics. Phys Rev Lett 2012; 109:067203. [PMID: 23006300 DOI: 10.1103/physrevlett.109.067203] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/18/2011] [Revised: 02/09/2012] [Indexed: 06/01/2023]
Abstract
A first-principles-based approach is developed to simulate dynamical properties, including complex permittivity and permeability in the GHz-THz range, of multiferroics at finite temperatures. It includes both structural degrees of freedom and magnetic moments as dynamic variables in Newtonian and Landau-Lifshitz-Gilbert (LLG) equations within molecular dynamics, respectively, with the couplings between these variables being incorporated. The use of a damping coefficient and of the fluctuation field in the LLG equations is required to obtain equilibrated magnetic properties at any temperature. No electromagnon is found in the spin-canted structure of BiFeO3. On the other hand, two magnons with very different frequencies are predicted via the use of this method. The smallest-in-frequency magnon corresponds to oscillations of the weak ferromagnetic vector in the basal plane being perpendicular to the polarization while the second magnon corresponds to magnetic dipoles going in and out of this basal plane. The large value of the frequency of this second magnon is caused by static couplings between magnetic dipoles with electric dipoles and oxygen octahedra tiltings.
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Affiliation(s)
- Dawei Wang
- Electronic Materials Research Laboratory-Key Laboratory of the Ministry of Education, and International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an, China.
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42
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Yang Y, Ren W, Stengel M, Yan XH, Bellaiche L. Revisiting properties of ferroelectric and multiferroic thin films under tensile strain from first principles. Phys Rev Lett 2012; 109:057602. [PMID: 23006208 DOI: 10.1103/physrevlett.109.057602] [Citation(s) in RCA: 28] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/14/2012] [Indexed: 06/01/2023]
Abstract
First-principles calculations are performed to revisit properties of (001) epitaxial BiFeO(3) (BFO) and PbTiO(3) thin films under tensile strain. While these two films possess different ground states when experiencing no misfit strain, they both exhibit the same, previously unknown phase for tensile strains above ≃5% at T = 0 K. This novel state is of orthorhombic Pmc2(1) symmetry and is macroscopically characterized by a large in-plane polarization coexisting with oxygen octahedra tilting in-phase about the out-of-plane direction. On a microscopic point of view, this Pmc2(1) state exhibits short atomic bonds and zigzag cation displacement patterns, unlike conventional ferroelectric phases and typical domains. Such unusual inhomogeneous patterns originate from the coexistence of polar and antiferroelectric distortions having the same magnitude and lead BFO films to be the first known material for which orbital ordering coexists with a large polarization. Furthermore, this Pmc2(1) state is also found in other perovskite films under tensile strain, which emphasizes its generality.
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Affiliation(s)
- Yurong Yang
- Physics Department, University of Arkansas, Fayetteville, 72701, USA
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43
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Daumont C, Ren W, Infante IC, Lisenkov S, Allibe J, Carrétéro C, Fusil S, Jacquet E, Bouvet T, Bouamrane F, Prosandeev S, Geneste G, Dkhil B, Bellaiche L, Barthélémy A, Bibes M. Strain dependence of polarization and piezoelectric response in epitaxial BiFeO3 thin films. J Phys Condens Matter 2012; 24:162202. [PMID: 22467186 DOI: 10.1088/0953-8984/24/16/162202] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
Epitaxial strain has recently emerged as a powerful means to engineer the properties of ferroelectric thin films, for instance to enhance the ferroelectric Curie temperature (T(C)) in BaTiO(3). However, in multiferroic BiFeO(3) thin films an unanticipated strain-driven decrease of T(C) was reported and ascribed to the peculiar competition between polar and antiferrodistortive instabilities. Here, we report a systematic characterization of the room-temperature ferroelectric and piezoelectric properties for strain levels ranging between -2.5% and +1%. We find that polarization and the piezoelectric coefficient increase by about 20% and 250%, respectively, in this strain range. These trends are well reproduced by first-principles-based techniques.
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Affiliation(s)
- C Daumont
- Unité Mixte de Physique CNRS/Thales, Palaiseau, France
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44
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Infante IC, Juraszek J, Fusil S, Dupé B, Gemeiner P, Diéguez O, Pailloux F, Jouen S, Jacquet E, Geneste G, Pacaud J, Íñiguez J, Bellaiche L, Barthélémy A, Dkhil B, Bibes M. Multiferroic phase transition near room temperature in BiFeO3 films. Phys Rev Lett 2011; 107:237601. [PMID: 22182123 DOI: 10.1103/physrevlett.107.237601] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/25/2011] [Indexed: 05/31/2023]
Abstract
In multiferroic BiFeO(3) thin films grown on highly mismatched LaAlO(3) substrates, we reveal the coexistence of two differently distorted polymorphs that leads to striking features in the temperature dependence of the structural and multiferroic properties. Notably, the highly distorted phase quasiconcomitantly presents an abrupt structural change, transforms from a standard to a nonconventional ferroelectric, and transitions from antiferromagnetic to paramagnetic at 360±20 K. These coupled ferroic transitions just above room temperature hold promises of giant piezoelectric, magnetoelectric, and piezomagnetic responses, with potential in many applications fields.
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Affiliation(s)
- I C Infante
- Unité Mixte de Physique CNRS/Thales, Campus de l'Ecole Polytechnique, 1 avenue Fresnel, 91767 Palaiseau, France
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45
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Ko KT, Jung MH, He Q, Lee JH, Woo CS, Chu K, Seidel J, Jeon BG, Oh YS, Kim KH, Liang WI, Chen HJ, Chu YH, Jeong YH, Ramesh R, Park JH, Yang CH. Concurrent transition of ferroelectric and magnetic ordering near room temperature. Nat Commun 2011; 2:567. [DOI: 10.1038/ncomms1576] [Citation(s) in RCA: 124] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/15/2011] [Accepted: 10/28/2011] [Indexed: 11/09/2022] Open
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Abstract
The coupling between order parameters in systems with several instabilities has been analysed within Landau theory. The dominant term considered in this paper is linear in one order parameter and quadratic in the second order parameter ~QP²; other coupling terms have been treated previously. Typical examples for Q are proper or pseudo-proper ferroelastic instabilities, while P might be octahedral tilting in a perovskite, (anti-)ferromagnetic ordering or (anti-)ferroelectric soft modes. Coupling of this type is common in fluorites, Verwey transitions, Jahn-Teller systems, pnictide superconductors, etc. Analytical solutions and characteristic phase diagrams of the stable configurations are compiled. The coupling can lead to stepwise phase transitions even when the uncoupled systems would show continuous transitions. Mixed phases are common, so that many 'intermediate phases' described in the literature may be the result of this linear-quadratic coupling.
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Affiliation(s)
- E K H Salje
- Department of Earth Sciences, University of Cambridge, Downing Street, Cambridge CB23EQ, UK
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47
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Abstract
An effective Hamiltonian technique is used to investigate the effect of applying curled electric fields on physical properties of stress-free BiFeO(3) dots being under open-circuit electrical boundary conditions. It is discovered that such fields can lead to a control of not only the magnitude but also the direction of the magnetization. Such control originates from the field-induced transformation or switching of electrical vortices and their couplings with oxygen octahedral tilts and magnetic dipoles. This control involves striking intermediate states and constitutes a novel phenomenon that can be termed a "magnetotoroidic" effect.
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Affiliation(s)
- Wei Ren
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
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48
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Prosandeev S, Kornev IA, Bellaiche L. Phase transitions in epitaxial (-110) BiFeO3 films from first principles. Phys Rev Lett 2011; 107:117602. [PMID: 22026703 DOI: 10.1103/physrevlett.107.117602] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/10/2011] [Indexed: 05/31/2023]
Abstract
The effect of misfit strain on properties of epitaxial BiFeO3 films that are grown along the pseudocubic [110] direction, rather than along the usual [001] direction, is predicted from density-functional theory. These films adopt the monoclinic Cc space group for compressive misfit strains smaller in magnitude than ≃1.6% and for any investigated tensile strain. In this Cc phase, both polarization and the axis about which antiphase oxygen octahedra tilt rotate within the epitaxial plane as the strain varies. Surprisingly and unlike in (001) films, for compressive strain larger in magnitude than ≃1.6%, the polarization vanishes and two orthorhombic phases of Pnma and P2(1)2(1)2(1) symmetry successively emerge via strain-induced transitions. The Pnma-to-P2(1)2(1)2(1) transition is a rare example of a so-called pure gyrotropic phase transition, and the P2(1)2(1)2(1) phase exhibits original interpenetrated arrays of ferroelectric vortices and antivortices.
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Affiliation(s)
- S Prosandeev
- Physics Department, University of Arkansas, Fayetteville, Arkansas 72701, USA
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49
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Dupé B, Prosandeev S, Geneste G, Dkhil B, Bellaiche L. BiFeO3 films under tensile epitaxial strain from first principles. Phys Rev Lett 2011; 106:237601. [PMID: 21770543 DOI: 10.1103/physrevlett.106.237601] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/21/2011] [Indexed: 05/31/2023]
Abstract
Density-functional calculations are performed to predict structural and magnetic properties of (001) BiFeO(3) films under tensile epitaxial strain. These films remain monoclinic (Cc space group) for misfit strains between 0% and ≈8%, with the polarization, tilt axis and magnetization all rotating when varying the strain. At a tensile strain ≈8%, these films undergo a first-order phase transition towards an orthorhombic phase (Ima2 space group). In this novel phase, the polarization and tilt axis lie in the epitaxial plane, while the magnetization is along the out-of-plane direction and the direction of the antiferromagnetic vector is unchanged by the phase transition. An unexpected additional degree of freedom, namely, an antiphase arrangement of Bi atoms, is also found for all tensile strains.
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Affiliation(s)
- B Dupé
- Laboratoire Structures, Propriétés et Modélisation des Solides, CNRS-UMR 8580, Ecole Centrale Paris, Châtenay-Malabry, France
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50
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Sichuga D, Bellaiche L. Epitaxial Pb(Zr,Ti)O3 ultrathin films under open-circuit electrical boundary conditions. Phys Rev Lett 2011; 106:196102. [PMID: 21668175 DOI: 10.1103/physrevlett.106.196102] [Citation(s) in RCA: 20] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/11/2011] [Indexed: 05/30/2023]
Abstract
The temperature-versus-misfit-strain phase diagram of Pb(Zr,Ti)O3 ultrathin films under open-circuit electrical boundary conditions is simulated via the use of an effective Hamiltonian. Two novel phases, both exhibiting dipolar nanodomains and oxygen octahedral tilting, are discovered. The interplay between dipolar, antiferrodistortive, alloying, and strain degrees of freedom induces several striking features in these two phases, such as the chemical pinning of domain walls, the enhancement of oxygen octahedral tilting near the domain walls, and the existence of dipolar waves and cylindrical dipolar chiral bubbles.
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Affiliation(s)
- David Sichuga
- Physics Department, Augusta Technical College, Augusta, Georgia 30906, USA
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