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Lee K, Park K, Choi IH, Cho JW, Song MS, Kim CH, Lee JH, Lee JS, Park J, Chae SC. Deterministic Orientation Control of Ferroelectric HfO 2 Thin Film Growth by a Topotactic Phase Transition of an Oxide Electrode. ACS Nano 2024. [PMID: 38733336 DOI: 10.1021/acsnano.3c07410] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2024]
Abstract
The scale-free ferroelectricity with superior Si compatibility of HfO2 has reawakened the feasibility of scaled-down nonvolatile devices and beyond the complementary metal-oxide-semiconductor (CMOS) architecture based on ferroelectric materials. However, despite the rapid development, fundamental understanding, and control of the metastable ferroelectric phase in terms of oxygen ion movement of HfO2 remain ambiguous. In this study, we have deterministically controlled the orientation of a single-crystalline ferroelectric phase HfO2 thin film via oxygen ion movement. We induced a topotactic phase transition of the metal electrode accompanied by the stabilization of the differently oriented ferroelectric phase HfO2 through the migration of oxygen ions between the oxygen-reactive metal electrode and the HfO2 layer. By stabilizing different polarization directions of HfO2 through oxygen ion migration, we can gain a profound understanding of the oxygen ion-relevant unclear phenomena of ferroelectric HfO2.
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Affiliation(s)
- Kyoungjun Lee
- Department of Physics Education, Seoul National University, Seoul 08826, Korea
| | - Kunwoo Park
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Korea
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Korea
| | - In Hyeok Choi
- Department of Physics and Photon Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Korea
| | - Jung Woo Cho
- Department of Physics Education, Seoul National University, Seoul 08826, Korea
| | - Myeong Seop Song
- Department of Physics Education, Seoul National University, Seoul 08826, Korea
| | - Chang Hoon Kim
- Department of Energy Engineering, School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Korea
| | - Jun Hee Lee
- Department of Energy Engineering, School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Korea
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Korea
| | - Jong Seok Lee
- Department of Physics and Photon Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Korea
| | - Jungwon Park
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Korea
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Korea
| | - Seung Chul Chae
- Department of Physics Education, Seoul National University, Seoul 08826, Korea
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2
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Wang Z, Guan Z, Wang H, Zhou X, Li J, Shen S, Yin Y, Li X. Pure ZrO 2 Ferroelectric Thin Film for Nonvolatile Memory and Neural Network Computing. ACS Appl Mater Interfaces 2024; 16:22122-22130. [PMID: 38626418 DOI: 10.1021/acsami.4c01234] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/18/2024]
Abstract
The recent discovery of ferroelectricity in pure ZrO2 has drawn much attention, but the information storage and processing performances of ferroelectric ZrO2-based nonvolatile devices remain open for further exploration. Here, a ZrO2 (∼8 nm)-based ferroelectric capacitor using RuO2 oxide electrodes is fabricated, and the ferroelectric orthorhombic phase evolution under electric field cycling is studied. A ferroelectric remnant polarization (2Pr) of >30 μC/cm2, leakage current density of ∼2.79 × 10-8 A/cm2 at 1 MV/cm, and estimated polarization retention of >10 years are achieved. When the ferroelectric capacitor is connected with a transistor, a memory window of ∼0.8 V and eight distinct states can be obtained in such a ferroelectric field-effect transistor (FeFET). Through the conductance manipulation of the FeFET, a high object image recognition accuracy of ∼93.32% is achieved on the basis of the CIFAR-10 dataset in the convolutional neural network (CNN) simulation, which is close to the result of ∼94.20% obtained by floating-point-based CNN software. These results demonstrate the potential of ferroelectric ZrO2 devices for nonvolatile memory and artificial neural network computing.
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Affiliation(s)
- Zijian Wang
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Zeyu Guan
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - He Wang
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Xiang Zhou
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Jiachen Li
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Shengchun Shen
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Yuewei Yin
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Xiaoguang Li
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, Jiangsu 210093, People's Republic of China
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3
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Li X, Liu Z, Gao A, Zhang Q, Zhong H, Meng F, Lin T, Wang S, Su D, Jin K, Ge C, Gu L. Ferroelastically protected reversible orthorhombic to monoclinic-like phase transition in ZrO 2 nanocrystals. Nat Mater 2024:10.1038/s41563-024-01853-9. [PMID: 38589541 DOI: 10.1038/s41563-024-01853-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/26/2023] [Accepted: 03/07/2024] [Indexed: 04/10/2024]
Abstract
Robust ferroelectricity in nanoscale fluorite oxide-based thin films enables promising applications in silicon-compatible non-volatile memories and logic devices. However, the polar orthorhombic (O) phase of fluorite oxides is a metastable phase that is prone to transforming into the ground-state non-polar monoclinic (M) phase, leading to macroscopic ferroelectric degradation. Here we investigate the reversibility of the O-M phase transition in ZrO2 nanocrystals via in situ visualization of the martensitic transformation at the atomic scale. We reveal that the reversible shear deformation pathway from the O phase to the monoclinic-like (M') state, a compressive-strained M phase, is protected by 90° ferroelectric-ferroelastic switching. Nevertheless, as the M' state gradually accumulates localized strain, a critical tensile strain can pin the ferroelastic domain, resulting in an irreversible M'-M strain relaxation and the loss of ferroelectricity. These findings demonstrate the key role of ferroelastic switching in the reversibility of phase transition and also provide a tensile-strain threshold for stabilizing the metastable ferroelectric phase in fluorite oxide thin films.
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Affiliation(s)
- Xinyan Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China
| | - Zhuohui Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China
| | - Ang Gao
- Beijing National Center for Electron Microscopy and Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China.
| | - Hai Zhong
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
| | - Fanqi Meng
- School of Materials Science and Engineering, Peking University, Beijing, China
| | - Ting Lin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
| | - Shiyu Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
| | - Dong Su
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Kuijuan Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, China
| | - Chen Ge
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China.
| | - Lin Gu
- Beijing National Center for Electron Microscopy and Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing, China.
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4
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Zhou C, Ma L, Feng Y, Kuo CY, Ku YC, Liu CE, Cheng X, Li J, Si Y, Huang H, Huang Y, Zhao H, Chang CF, Das S, Liu S, Chen Z. Enhanced polarization switching characteristics of HfO 2 ultrathin films via acceptor-donor co-doping. Nat Commun 2024; 15:2893. [PMID: 38570498 PMCID: PMC10991407 DOI: 10.1038/s41467-024-47194-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/14/2023] [Accepted: 03/22/2024] [Indexed: 04/05/2024] Open
Abstract
In the realm of ferroelectric memories, HfO2-based ferroelectrics stand out because of their exceptional CMOS compatibility and scalability. Nevertheless, their switchable polarization and switching speed are not on par with those of perovskite ferroelectrics. It is widely acknowledged that defects play a crucial role in stabilizing the metastable polar phase of HfO2. Simultaneously, defects also pin the domain walls and impede the switching process, ultimately rendering the sluggish switching of HfO2. Herein, we present an effective strategy involving acceptor-donor co-doping to effectively tackle this dilemma. Remarkably enhanced ferroelectricity and the fastest switching process ever reported among HfO2 polar devices are observed in La3+-Ta5+ co-doped HfO2 ultrathin films. Moreover, robust macro-electrical characteristics of co-doped films persist even at a thickness as low as 3 nm, expanding potential applications of HfO2 in ultrathin devices. Our systematic investigations further demonstrate that synergistic effects of uniform microstructure and smaller switching barrier introduced by co-doping ensure the enhanced ferroelectricity and shortened switching time. The co-doping strategy offers an effective avenue to control the defect state and improve the ferroelectric properties of HfO2 films.
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Affiliation(s)
- Chao Zhou
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Liyang Ma
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, Hangzhou, Zhejiang, 310024, China
| | - Yanpeng Feng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
| | - Chang-Yang Kuo
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
- National Synchrotron Radiation Research Center, Hsinchu, Taiwan
| | - Yu-Chieh Ku
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Cheng-En Liu
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Xianlong Cheng
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Jingxuan Li
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Yangyang Si
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Haoliang Huang
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Yan Huang
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Hongjian Zhao
- Key Laboratory of Material Simulation Methods and Software of Ministry of Education, College of Physics, Jilin University, Changchun, 130012, China
| | - Chun-Fu Chang
- Max-Planck Institute for Chemical Physics of Solids, Nöthnitzer Str. 40, 01187, Dresden, Germany
| | - Sujit Das
- Materials Research Centre, Indian Institute of Science, Bangalore, 560012, India
| | - Shi Liu
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, Hangzhou, Zhejiang, 310024, China.
| | - Zuhuang Chen
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China.
- Flexible Printed Electronics Technology Center, Harbin Institute of Technology, Shenzhen, 518055, China.
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5
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Jayakrishnan AR, Kim JS, Hellenbrand M, Marques LS, MacManus-Driscoll JL, Silva JPB. Growth of emergent simple pseudo-binary ferroelectrics and their potential in neuromorphic computing devices. Mater Horiz 2024. [PMID: 38477152 DOI: 10.1039/d4mh00153b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/14/2024]
Abstract
Ferroelectric memory devices such as ferroelectric memristors, ferroelectric tunnel junctions, and field-effect transistors are considered among the most promising candidates for neuromorphic computing devices. The promise arises from their defect-independent switching mechanism, low energy consumption and high power efficiency, and important properties being aimed for are reliable switching at high speed, excellent endurance, retention, and compatibility with complementary metal-oxide-semiconductor (CMOS) technology. Binary or doped binary materials have emerged over conventional complex-composition ferroelectrics as an optimum solution, particularly in terms of CMOS compatibility. The current state-of-the-art route to achieving superlative ferroelectric performance of binary oxides is to induce ferroelectricity at the nanoscale, e.g., in ultra-thin films of doped HfO2, ZrO2, Zn1-xMgxO, Al-xScxN, and Bi1-xSmxO3. This short review article focuses on the materials science of emerging new ferroelectric materials, including their different properties such as remanent polarization, coercive field, endurance, etc. The potential of these materials is discussed for neuromorphic applications.
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Affiliation(s)
- Ampattu R Jayakrishnan
- Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal.
- Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, 4710-057 Braga, Portugal
| | - Ji S Kim
- Dept. of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Rd., Cambridge, CB3 OFS, UK.
| | - Markus Hellenbrand
- Dept. of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Rd., Cambridge, CB3 OFS, UK.
| | - Luís S Marques
- Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal.
- Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, 4710-057 Braga, Portugal
| | - Judith L MacManus-Driscoll
- Dept. of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Rd., Cambridge, CB3 OFS, UK.
| | - José P B Silva
- Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal.
- Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, 4710-057 Braga, Portugal
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6
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Zhang X, Cheng M, Dai J, Yang Q, Zhang Y, Dong B, Tao X, Zou J, Jin Z, Liu F, Wu Z, Hu X, Zheng Z, Shi Z, Jiang S, Zhang L, Yang T, Zhang X, Zhou L. Scalable Synthesis of High-Quality Ultrathin Ferroelectric Magnesium Molybdenum Oxide. Adv Mater 2024:e2308550. [PMID: 38478729 DOI: 10.1002/adma.202308550] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/22/2023] [Revised: 02/15/2024] [Indexed: 03/20/2024]
Abstract
The development of ultrathin, stable ferroelectric materials is crucial for advancing high-density, low-power electronic devices. Nonetheless, ultrathin ferroelectric materials are rare due to the critical size effect. Here, a novel ferroelectric material, magnesium molybdenum oxide (Mg2 Mo3 O8 ) is presented. High-quality ultrathin Mg2 Mo3 O8 crystals are synthesized using chemical vapor deposition (CVD). Ultrathin Mg2 Mo3 O8 has a wide bandgap (≈4.4 eV) and nonlinear optical response. Mg2 Mo3 O8 crystals of varying thicknesses exhibit out-of-plane ferroelectric properties at room temperature, with ferroelectricity retained even at a 2 nm thickness. The Mg2 Mo3 O8 exhibits a relatively large remanent polarization ranging from 33 to 52 µC cm- 2 , which is tunable by changing its thickness. Notably, Mg2 Mo3 O8 possesses a high Curie temperature (>980 °C) across various thicknesses. Moreover, the as-grown Mg2 Mo3 O8 crystals display remarkable stability under harsh environments. This work introduces nolanites-type crystal into ultrathin ferroelectrics. The scalable synthesis of stable ultrathin ferroelectric Mg2 Mo3 O8 expands the scope of ferroelectric materials and may prosper applications of ferroelectrics.
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Affiliation(s)
- Xingxing Zhang
- School of Chemistry and Chemical Engineering, Frontiers Science Centre for Transformative Molecules, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Mo Cheng
- School of Chemistry and Chemical Engineering, Frontiers Science Centre for Transformative Molecules, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Jiuxiang Dai
- School of Chemistry and Chemical Engineering, Frontiers Science Centre for Transformative Molecules, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Qianqian Yang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing, 100083, China
| | - Ye Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, China and School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China
| | - Baojuan Dong
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, 030006, China
| | - Xinwei Tao
- School of Chemistry and Chemical Engineering, Frontiers Science Centre for Transformative Molecules, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Jingyi Zou
- Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA, 15213, USA
| | - Zhitong Jin
- School of Chemistry and Chemical Engineering, Frontiers Science Centre for Transformative Molecules, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Feng Liu
- School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Zhenghan Wu
- School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Xianyu Hu
- School of Chemistry and Chemical Engineering, Frontiers Science Centre for Transformative Molecules, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Zemin Zheng
- School of Chemistry and Chemical Engineering, Frontiers Science Centre for Transformative Molecules, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Zhiwen Shi
- School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Shengwei Jiang
- School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Linxing Zhang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing, 100083, China
| | - Teng Yang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, China and School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China
| | - Xu Zhang
- Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA, 15213, USA
| | - Lin Zhou
- School of Chemistry and Chemical Engineering, Frontiers Science Centre for Transformative Molecules, Shanghai Jiao Tong University, Shanghai, 200240, China
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7
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Cheng H, Jiao P, Wang J, Qing M, Deng Y, Liu JM, Bellaiche L, Wu D, Yang Y. Tunable and parabolic piezoelectricity in hafnia under epitaxial strain. Nat Commun 2024; 15:394. [PMID: 38195734 PMCID: PMC10776838 DOI: 10.1038/s41467-023-44207-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/10/2023] [Accepted: 12/04/2023] [Indexed: 01/11/2024] Open
Abstract
Piezoelectrics are a class of functional materials that have been extensively used for application in modern electro-mechanical and mechatronics technologies. The sign of longitudinal piezoelectric coefficients is typically positive but recently a few ferroelectrics, such as ferroelectric polymer poly(vinylidene fluoride) and van der Waals ferroelectric CuInP2S6, were experimentally found to have negative piezoelectricity. Here, using first-principles calculation and measurements, we show that the sign of the longitudinal linear piezoelectric coefficient of HfO2 can be tuned from positive to negative via epitaxial strain. Nonlinear and even parabolic piezoelectric behaviors are further found at tensile epitaxial strain. This parabolic piezoelectric behavior implies that the polarization decreases when increasing the magnitude of either compressive or tensile longitudinal strain, or, equivalently, that the strain increases when increasing the magnitude of electric field being either parallel or antiparallel to the direction of polarization. The unusual piezoelectric effects are from the chemical coordination of the active oxygen atoms. These striking piezoelectric features of positive and negative sign, as well as linear and parabolical behaviors, expand the current knowledge in piezoelectricity and broaden the potential of piezoelectric applications towards electro-mechanical and communications technology.
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Affiliation(s)
- Hao Cheng
- Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, China
- Jiangsu Key Laboratory of Artificial Functional Materials, Department of Materials Science and Engineering, Nanjing University, Nanjing, 210093, China
| | - Peijie Jiao
- Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, China
- Jiangsu Key Laboratory of Artificial Functional Materials, Department of Materials Science and Engineering, Nanjing University, Nanjing, 210093, China
| | - Jian Wang
- Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, China
- Jiangsu Key Laboratory of Artificial Functional Materials, Department of Materials Science and Engineering, Nanjing University, Nanjing, 210093, China
| | - Mingkai Qing
- Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, China
- Jiangsu Key Laboratory of Artificial Functional Materials, Department of Materials Science and Engineering, Nanjing University, Nanjing, 210093, China
| | - Yu Deng
- Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, China
- Jiangsu Key Laboratory of Artificial Functional Materials, Department of Materials Science and Engineering, Nanjing University, Nanjing, 210093, China
| | - Jun-Ming Liu
- Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, China
| | - Laurent Bellaiche
- Physics Department, Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA.
| | - Di Wu
- Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, China.
- Jiangsu Key Laboratory of Artificial Functional Materials, Department of Materials Science and Engineering, Nanjing University, Nanjing, 210093, China.
| | - Yurong Yang
- Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, China.
- Jiangsu Key Laboratory of Artificial Functional Materials, Department of Materials Science and Engineering, Nanjing University, Nanjing, 210093, China.
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8
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Niu Y, Li L, Qi Z, Aung HH, Han X, Tenne R, Yao Y, Zak A, Guo Y. 0D van der Waals interfacial ferroelectricity. Nat Commun 2023; 14:5578. [PMID: 37907466 PMCID: PMC10618478 DOI: 10.1038/s41467-023-41045-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/26/2023] [Accepted: 08/21/2023] [Indexed: 11/02/2023] Open
Abstract
The dimensional limit of ferroelectricity has been long explored. The critical contravention is that the downscaling of ferroelectricity leads to a loss of polarization. This work demonstrates a zero-dimensional ferroelectricity by the atomic sliding at the restrained van der Waals interface of crossed tungsten disufilde nanotubes. The developed zero-dimensional ferroelectric diode in this work presents not only non-volatile resistive memory, but also the programmable photovoltaic effect at the visible band. Benefiting from the intrinsic dimensional limitation, the zero-dimensional ferroelectric diode allows electrical operation at an ultra-low current. By breaking through the critical size of depolarization, this work demonstrates the ultimately downscaled interfacial ferroelectricity of zero-dimensional, and contributes to a branch of devices that integrates zero-dimensional ferroelectric memory, nano electro-mechanical system, and programmable photovoltaics in one.
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Affiliation(s)
- Yue Niu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Lei Li
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Zhiying Qi
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Hein Htet Aung
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Xinyi Han
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Reshef Tenne
- Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, 7610001, Rehovot, Israel
| | - Yugui Yao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Alla Zak
- Faculty of Sciences, Holon Institute of Technology, 52 Golomb Street, 5810201, Holon, Israel
| | - Yao Guo
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China.
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China.
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9
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Su R, Zhang J, Wong V, Zhang D, Yang Y, Luo ZD, Wang X, Wen H, Liu Y, Seidel J, Yang X, Pan Y, Li FT. Engineering Sub-Nanometer Hafnia-Based Ferroelectrics to Break the Scaling Relation for High-Efficiency Piezocatalytic Water Splitting. Adv Mater 2023; 35:e2303018. [PMID: 37408522 DOI: 10.1002/adma.202303018] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/01/2023] [Revised: 07/03/2023] [Accepted: 07/04/2023] [Indexed: 07/07/2023]
Abstract
Reversible control of ferroelectric polarization is essential to overcome the heterocatalytic kinetic limitation. This can be achieved by creating a surface with switchable electron density; however, owing to the rigidity of traditional ferroelectric oxides, achieving polarization reversal in piezocatalytic processes remains challenging. Herein, sub-nanometer-sized Hf0.5 Zr0.5 O2 (HZO) nanowires with a polymer-like flexibility are synthesized. Oxygen K-edge X-ray absorption spectroscopy and negative spherical aberration-corrected transmission electron microscopy reveal an orthorhombic (Pca21 ) ferroelectric phase of the HZO sub-nanometer wires (SNWs). The ferroelectric polarization of the flexible HZO SNWs can be easily switched by slight external vibration, resulting in dynamic modulation of the binding energy of adsorbates and thus breaking the "scaling relationship" during piezocatalysis. Consequently, the as-synthesized ultrathin HZO nanowires display superb water-splitting activity, with H2 production rate of 25687 µmol g-1 h-1 under 40 kHz ultrasonic vibration, which is 235 and 41 times higher than those of non-ferroelectric hafnium oxides and rigid BaTiO3 nanoparticles, respectively. More strikingly, the hydrogen production rates can reach 5.2 µmol g-1 h-1 by addition of stirring exclusively.
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Affiliation(s)
- Ran Su
- Hebei Key Laboratory of Photoelectric Control on Surface and Interface, College of Science, Hebei University of Science and Technology, Shijiazhuang, 050018, P. R. China
| | - Jiahui Zhang
- Hebei Key Laboratory of Photoelectric Control on Surface and Interface, College of Science, Hebei University of Science and Technology, Shijiazhuang, 050018, P. R. China
| | - Vienna Wong
- School of Materials Science and Engineering, University of New South Wales Australia, Sydney, New South Wales, 2052, Australia
| | - Dawei Zhang
- School of Materials Science and Engineering, University of New South Wales Australia, Sydney, New South Wales, 2052, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, UNSW Sydney, Sydney, NSW, 2052, Australia
| | - Yong Yang
- State Key Laboratory of Solidification Processing, Center of Advanced Lubrication and Seal Materials, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Zheng-Dong Luo
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, P. R. China
| | - Xiaojing Wang
- Hebei Key Laboratory of Photoelectric Control on Surface and Interface, College of Science, Hebei University of Science and Technology, Shijiazhuang, 050018, P. R. China
| | - Hui Wen
- College of Electrical Engineering, Hebei University of Science and Technology, Shijiazhuang, 050018, P. R. China
| | - Yang Liu
- School of Materials Science and Engineering, State Key Laboratory of Material Processing and Die & Mould Technology, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Jan Seidel
- School of Materials Science and Engineering, University of New South Wales Australia, Sydney, New South Wales, 2052, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, UNSW Sydney, Sydney, NSW, 2052, Australia
| | - Xiaolong Yang
- College of Physics & Chongqing Key Laboratory for Strongly Coupled Physics, Center of Quantum Materials and Devices, Chongqing University, Chongqing, 401331, P. R. China
| | - Ying Pan
- Department of Chemistry, University of Paderborn, 33098, Paderborn, Germany
| | - Fa-Tang Li
- Hebei Key Laboratory of Photoelectric Control on Surface and Interface, College of Science, Hebei University of Science and Technology, Shijiazhuang, 050018, P. R. China
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10
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Hong X. Ferroelectric hafnia surface in action. Nat Mater 2023; 22:1049-1050. [PMID: 37580368 DOI: 10.1038/s41563-023-01639-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/16/2023]
Affiliation(s)
- Xia Hong
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE, USA.
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11
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Kelley KP, Morozovska AN, Eliseev EA, Liu Y, Fields SS, Jaszewski ST, Mimura T, Calderon S, Dickey EC, Ihlefeld JF, Kalinin SV. Ferroelectricity in hafnia controlled via surface electrochemical state. Nat Mater 2023; 22:1144-1151. [PMID: 37580369 DOI: 10.1038/s41563-023-01619-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/21/2022] [Accepted: 06/26/2023] [Indexed: 08/16/2023]
Abstract
Ferroelectricity in binary oxides including hafnia and zirconia has riveted the attention of the scientific community due to the highly unconventional physical mechanisms and the potential for the integration of these materials into semiconductor workflows. Over the last decade, it has been argued that behaviours such as wake-up phenomena and an extreme sensitivity to electrode and processing conditions suggest that ferroelectricity in these materials is strongly influenced by other factors, including electrochemical boundary conditions and strain. Here we argue that the properties of these materials emerge due to the interplay between the bulk competition between ferroelectric and structural instabilities, similar to that in classical antiferroelectrics, coupled with non-local screening mediated by the finite density of states at surfaces and internal interfaces. Via the decoupling of electrochemical and electrostatic controls, realized via environmental and ultra-high vacuum piezoresponse force microscopy, we show that these materials demonstrate a rich spectrum of ferroic behaviours including partial-pressure-induced and temperature-induced transitions between ferroelectric and antiferroelectric behaviours. These behaviours are consistent with an antiferroionic model and suggest strategies for hafnia-based device optimization.
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Affiliation(s)
- Kyle P Kelley
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, USA.
| | - Anna N Morozovska
- Institute of Physics, National Academy of Sciences of Ukraine, Kyiv, Ukraine
| | - Eugene A Eliseev
- Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, Kyiv, Ukraine
| | - Yongtao Liu
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, USA
| | - Shelby S Fields
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA, USA
| | - Samantha T Jaszewski
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA, USA
| | - Takanori Mimura
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA, USA
| | - Sebastian Calderon
- Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA, USA
| | - Elizabeth C Dickey
- Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA, USA
| | - Jon F Ihlefeld
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA, USA
- Charles L. Brown Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, USA
| | - Sergei V Kalinin
- Materials Science and Engineering Department, University of Tennessee, Knoxville, Knoxville, TN, USA.
- Joint Institute for Advanced Materials, Department of Materials Science and Engineering, University of Tennessee, Knoxville, Knoxville, TN, USA.
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12
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Liu C, Gui L, Zheng JJ, Xu YQ, Song B, Yi L, Jia Y, Taledaohan A, Wang Y, Gao X, Qiao ZY, Wang H, Tang Z. Intrinsic Strain-Mediated Ultrathin Ceria Nanoantioxidant. J Am Chem Soc 2023; 145:19086-19097. [PMID: 37596995 DOI: 10.1021/jacs.3c07048] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/21/2023]
Abstract
Metal oxide nanozymes have emerged as the most efficient and promising candidates to mimic antioxidant enzymes for treatment of oxidative stress-mediated pathophysiological disorders, but the current effectiveness is unsatisfactory due to insufficient catalytic performance. Here, we report for the first time an intrinsic strain-mediated ultrathin ceria nanoantioxidant. Surface strain in ceria with variable thicknesses and coordinatively unsaturated Ce sites was investigated by theoretical calculation analysis and then was validated by preparing ∼1.2 nm ultrathin nanoplates with ∼3.0% tensile strain in plane/∼10.0% tensile strain out of plane. Compared with nanocubes, surface strain in ultrathin nanoplates could enhance the covalency of the Ce-O bond, leading to increasing superoxide dismutase (SOD)-mimetic activity by ∼2.6-fold (1533 U/mg, in close proximity to that of natural SOD) and total antioxidant activity by ∼2.5-fold. As a proof of concept, intrinsic strain-mediated ultrathin ceria nanoplates could boost antioxidation for improved ischemic stroke treatment in vivo, significantly better than edaravone, a commonly used clinical drug.
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Affiliation(s)
- Cong Liu
- Laboratory for Biomedical Effects of Nanomaterials and Nanosafety, National Center for Nanoscience and Technology of China (NCNST), Beijing 100190, China
| | - Lin Gui
- Department of Medicinal Chemistry, College of Pharmaceutical Sciences of Capital Medical University, Beijing 100069, China
- Beijing Area Major Laboratory of Peptide and Small Molecular Drugs, Engineering Research Center of Endogenous Prophylactic of Ministry of Education of China, Beijing Laboratory of Biomedical Materials, Beijing 100069, China
| | - Jia-Jia Zheng
- Laboratory of Theoretical and Computational Nanoscience, National Center for Nanoscience and Technology of China (NCNST), Beijing 100190, China
| | - Yong-Qiang Xu
- Laboratory for Biomedical Effects of Nanomaterials and Nanosafety, National Center for Nanoscience and Technology of China (NCNST), Beijing 100190, China
| | - Benli Song
- Laboratory for Biomedical Effects of Nanomaterials and Nanosafety, National Center for Nanoscience and Technology of China (NCNST), Beijing 100190, China
| | - Li Yi
- Laboratory for Biomedical Effects of Nanomaterials and Nanosafety, National Center for Nanoscience and Technology of China (NCNST), Beijing 100190, China
| | - Yijiang Jia
- Department of Medicinal Chemistry, College of Pharmaceutical Sciences of Capital Medical University, Beijing 100069, China
- Beijing Area Major Laboratory of Peptide and Small Molecular Drugs, Engineering Research Center of Endogenous Prophylactic of Ministry of Education of China, Beijing Laboratory of Biomedical Materials, Beijing 100069, China
| | - Ayijiang Taledaohan
- Department of Medicinal Chemistry, College of Pharmaceutical Sciences of Capital Medical University, Beijing 100069, China
- Beijing Area Major Laboratory of Peptide and Small Molecular Drugs, Engineering Research Center of Endogenous Prophylactic of Ministry of Education of China, Beijing Laboratory of Biomedical Materials, Beijing 100069, China
| | - Yuji Wang
- Department of Medicinal Chemistry, College of Pharmaceutical Sciences of Capital Medical University, Beijing 100069, China
- Beijing Area Major Laboratory of Peptide and Small Molecular Drugs, Engineering Research Center of Endogenous Prophylactic of Ministry of Education of China, Beijing Laboratory of Biomedical Materials, Beijing 100069, China
| | - Xingfa Gao
- Laboratory of Theoretical and Computational Nanoscience, National Center for Nanoscience and Technology of China (NCNST), Beijing 100190, China
| | - Zeng-Ying Qiao
- Laboratory for Biomedical Effects of Nanomaterials and Nanosafety, National Center for Nanoscience and Technology of China (NCNST), Beijing 100190, China
| | - Hao Wang
- Laboratory for Biomedical Effects of Nanomaterials and Nanosafety, National Center for Nanoscience and Technology of China (NCNST), Beijing 100190, China
| | - Zhiyong Tang
- Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology of China (NCNST), Beijing 100190, China
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13
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Wang Y, Tao L, Guzman R, Luo Q, Zhou W, Yang Y, Wei Y, Liu Y, Jiang P, Chen Y, Lv S, Ding Y, Wei W, Gong T, Wang Y, Liu Q, Du S, Liu M. A stable rhombohedral phase in ferroelectric Hf(Zr) 1+xO 2 capacitor with ultralow coercive field. Science 2023; 381:558-563. [PMID: 37535726 DOI: 10.1126/science.adf6137] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/02/2022] [Accepted: 06/22/2023] [Indexed: 08/05/2023]
Abstract
Hafnium oxide-based ferroelectric materials are promising candidates for next-generation nanoscale devices because of their ability to integrate into silicon electronics. However, the intrinsic high coercive field of the fluorite-structure oxide ferroelectric devices leads to incompatible operating voltage and limited endurance performance. We discovered a complementary metal-oxide semiconductor (CMOS)-compatible rhombohedral ferroelectric Hf(Zr)1+xO2 material rich in hafnium-zirconium [Hf(Zr)]. X-ray diffraction combined with scanning transmission electron microscopy reveals that the excess Hf(Zr) atoms intercalate within the hollow sites. We found that the intercalated atoms expand the lattice and increase the in-plane and out-of-plane stresses, which stabilize both the rhombohedral phase (r-phase) and its ferroelectric properties. Our ferroelectric devices, which are based on the r-phase Hf(Zr)1+xO2, exhibit an ultralow coercive field (~0.65 megavolts per centimeter). Moreover, we achieved a high endurance of more than 1012 cycles at saturation polarization. This material discovery may help to realize low-cost and long-life memory chips.
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Affiliation(s)
- Yuan Wang
- State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
| | - Lei Tao
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
| | - Roger Guzman
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
| | - Qing Luo
- State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
| | - Wu Zhou
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
| | - Yang Yang
- State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
| | - Yingfen Wei
- Frontier Institute of Chip and System, Fudan University, Shanghai, China
| | - Yu Liu
- State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
| | - Pengfei Jiang
- State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
| | - Yuting Chen
- State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
| | - Shuxian Lv
- State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
| | - Yaxin Ding
- State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
| | - Wei Wei
- State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
| | - Tiancheng Gong
- State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
| | - Yan Wang
- State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
| | - Qi Liu
- Frontier Institute of Chip and System, Fudan University, Shanghai, China
| | - Shixuan Du
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
- Institute of Physics, Chinese Academy of Sciences, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, China
| | - Ming Liu
- State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
- Frontier Institute of Chip and System, Fudan University, Shanghai, China
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14
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Gong FH, Tang YL, Wang YJ, Chen YT, Wu B, Yang LX, Zhu YL, Ma XL. Absence of critical thickness for polar skyrmions with breaking the Kittel's law. Nat Commun 2023; 14:3376. [PMID: 37291226 PMCID: PMC10250330 DOI: 10.1038/s41467-023-39169-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/21/2022] [Accepted: 05/31/2023] [Indexed: 06/10/2023] Open
Abstract
The period of polar domain (d) in ferroics was commonly believed to scale with corresponding film thicknesses (h), following the classical Kittel's law of d ∝ [Formula: see text]. Here, we have not only observed that this relationship fails in the case of polar skyrmions, where the period shrinks nearly to a constant value, or even experiences a slight increase, but also discovered that skyrmions have further persisted in [(PbTiO3)2/(SrTiO3)2]10 ultrathin superlattices. Both experimental and theoretical results indicate that the skyrmion periods (d) and PbTiO3 layer thicknesses in superlattice (h) obey the hyperbolic function of d = Ah + [Formula: see text] other than previous believed, simple square root law. Phase-field analysis indicates that the relationship originates from the different energy competitions of the superlattices with PbTiO3 layer thicknesses. This work exemplified the critical size problems faced by nanoscale ferroelectric device designing in the post-Moore era.
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Affiliation(s)
- Feng-Hui Gong
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Wenhua Road 72, Shenyang, 110016, China
| | - Yun-Long Tang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
| | - Yu-Jia Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
| | - Yu-Ting Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Wenhua Road 72, Shenyang, 110016, China
| | - Bo Wu
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China
| | - Li-Xin Yang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
| | - Yin-Lian Zhu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China.
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China.
| | - Xiu-Liang Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China.
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China.
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
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15
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Kim IJ, Lee JS. Ferroelectric Transistors for Memory and Neuromorphic Device Applications. Adv Mater 2023; 35:e2206864. [PMID: 36484488 DOI: 10.1002/adma.202206864] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/28/2022] [Revised: 11/26/2022] [Indexed: 06/02/2023]
Abstract
Ferroelectric materials have been intensively investigated for high-performance nonvolatile memory devices in the past decades, owing to their nonvolatile polarization characteristics. Ferroelectric memory devices are expected to exhibit lower power consumption and higher speed than conventional memory devices. However, non-complementary metal-oxide-semiconductor (CMOS) compatibility and degradation due to fatigue of traditional perovskite-based ferroelectric materials have hindered the development of high-density and high-performance ferroelectric memories in the past. The recently developed hafnia-based ferroelectric materials have attracted immense attention in the development of advanced semiconductor devices. Because hafnia is typically used in CMOS processes, it can be directly incorporated into current semiconductor technologies. Additionally, hafnia-based ferroelectrics show high scalability and large coercive fields that are advantageous for high-density memory devices. This review summarizes the recent developments in ferroelectric devices, especially ferroelectric transistors, for next-generation memory and neuromorphic applications. First, the types of ferroelectric memories and their operation mechanisms are reviewed. Then, issues limiting the realization of high-performance ferroelectric transistors and possible solutions are discussed. The experimental demonstration of ferroelectric transistor arrays, including 3D ferroelectric NAND and its operation characteristics, are also reviewed. Finally, challenges and strategies toward the development of next-generation memory and neuromorphic applications based on ferroelectric transistors are outlined.
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Affiliation(s)
- Ik-Jyae Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Jang-Sik Lee
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
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16
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Noheda B, Nukala P, Acuautla M. Lessons from hafnium dioxide-based ferroelectrics. Nat Mater 2023; 22:562-569. [PMID: 37138006 DOI: 10.1038/s41563-023-01507-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/04/2022] [Accepted: 02/13/2023] [Indexed: 05/05/2023]
Abstract
A bit more than a decade after the first report of ferroelectric switching in hafnium dioxide-based ultrathin layers, this family of materials continues to elicit interest. There is ample consensus that the observed switching does not obey the same mechanisms present in most other ferroelectrics, but its exact nature is still under debate. Next to this fundamental relevance, a large research effort is dedicated to optimizing the use of this extraordinary material, which already shows direct integrability in current semiconductor chips and potential for scalability to the smallest node architectures, in smaller and more reliable devices. Here we present a perspective on how, despite our incomplete understanding and remaining device endurance issues, the lessons learned from hafnium dioxide-based ferroelectrics offer interesting avenues beyond ferroelectric random-access memories and field-effect transistors. We hope that research along these other directions will stimulate discoveries that, in turn, will mitigate some of the current issues. Extending the scope of available systems will eventually enable the way to low-power electronics, self-powered devices and energy-efficient information processing.
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Affiliation(s)
- Beatriz Noheda
- Zernike Institute for Advanced Materials, University of Groningen, Groningen, The Netherlands.
- CogniGron Center, University of Groningen, Groningen, The Netherlands.
| | - Pavan Nukala
- Center for Nanoscience and Engineering, Indian Institute of Science, Bengaluru, India
| | - Mónica Acuautla
- Engineering and Technology Institute Groningen (ENTEG), University of Groningen, Groningen, The Netherlands
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17
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Ning H, Yu Z, Zhang Q, Wen H, Gao B, Mao Y, Li Y, Zhou Y, Zhou Y, Chen J, Liu L, Wang W, Li T, Li Y, Meng W, Li W, Li Y, Qiu H, Shi Y, Chai Y, Wu H, Wang X. An in-memory computing architecture based on a duplex two-dimensional material structure for in situ machine learning. Nat Nanotechnol 2023; 18:493-500. [PMID: 36941361 DOI: 10.1038/s41565-023-01343-0] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/18/2022] [Accepted: 02/07/2023] [Indexed: 05/21/2023]
Abstract
The growing computational demand in artificial intelligence calls for hardware solutions that are capable of in situ machine learning, where both training and inference are performed by edge computation. This not only requires extremely energy-efficient architecture (such as in-memory computing) but also memory hardware with tunable properties to simultaneously meet the demand for training and inference. Here we report a duplex device structure based on a ferroelectric field-effect transistor and an atomically thin MoS2 channel, and realize a universal in-memory computing architecture for in situ learning. By exploiting the tunability of the ferroelectric energy landscape, the duplex building block demonstrates an overall excellent performance in endurance (>1013), retention (>10 years), speed (4.8 ns) and energy consumption (22.7 fJ bit-1 μm-2). We implemented a hardware neural network using arrays of two-transistors-one-duplex ferroelectric field-effect transistor cells and achieved 99.86% accuracy in a nonlinear localization task with in situ trained weights. Simulations show that the proposed device architecture could achieve the same level of performance as a graphics processing unit under notably improved energy efficiency. Our device core can be combined with silicon circuitry through three-dimensional heterogeneous integration to give a hardware solution towards general edge intelligence.
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Affiliation(s)
- Hongkai Ning
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Zhihao Yu
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
- School of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China.
| | - Qingtian Zhang
- School of Integrated Circuits, Tsinghua University, Beijing, China
| | - Hengdi Wen
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Bin Gao
- School of Integrated Circuits, Tsinghua University, Beijing, China.
| | - Yun Mao
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Yuankun Li
- School of Integrated Circuits, Tsinghua University, Beijing, China
| | - Ying Zhou
- School of Integrated Circuits, Tsinghua University, Beijing, China
| | - Yue Zhou
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
| | - Jiewei Chen
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
| | - Lei Liu
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Wenfeng Wang
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Taotao Li
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Yating Li
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Wanqing Meng
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Weisheng Li
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Yun Li
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Hao Qiu
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Yi Shi
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
| | - Huaqiang Wu
- School of Integrated Circuits, Tsinghua University, Beijing, China.
| | - Xinran Wang
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
- School of Integrated Circuits, Nanjing University, Suzhou, China.
- Suzhou Laboratory, Suzhou, China.
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18
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Crema APS, Istrate MC, Silva A, Lenzi V, Domingues L, Hill MO, Teodorescu VS, Ghica C, Gomes MJM, Pereira M, Marques L, MacManus-Driscoll JL, Silva JPB. Ferroelectric Orthorhombic ZrO 2 Thin Films Achieved Through Nanosecond Laser Annealing. Adv Sci (Weinh) 2023; 10:e2207390. [PMID: 36950722 DOI: 10.1002/advs.202207390] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/15/2022] [Revised: 02/22/2023] [Indexed: 05/27/2023]
Abstract
A new approach for the stabilization of the ferroelectric orthorhombic ZrO2 films is demonstrated through nanosecond laser annealing (NLA) of as-deposited Si/SiOx /W(14 nm)/ZrO2 (8 nm)/W(22 nm), grown by ion beam sputtering at low temperatures. The NLA process optimization is guided by COMSOL multiphysics simulations. The films annealed under the optimized conditions reveal the presence of the orthorhombic phase, as confirmed by X-ray diffraction, electron backscatter diffraction, and transmission electron microscopy. Macroscopic polarization-electric field hysteresis loops show ferroelectric behavior, with saturation polarization of 12.8 µC cm-2 , remnant polarization of 12.7 µC cm-2 and coercive field of 1.2 MV cm-1 . The films exhibit a wake-up effect that is attributed to the migration of point defects, such as oxygen vacancies, and/or a transition from nonferroelectric (monoclinic and tetragonal phase) to the ferroelectric orthorhombic phase. The capacitors demonstrate a stable polarization with an endurance of 6.0 × 105 cycles, demonstrating the potential of the NLA process for the fabrication of ferroelectric memory devices with high polarization, low coercive field, and high cycling stability.
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Affiliation(s)
- Anna P S Crema
- Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, Braga, 4710-057, Portugal
- Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, Braga, 4710-057, Portugal
| | - Marian C Istrate
- University of Bucharest, Faculty of Physics, Atomistilor 405, Magurele, Ilfov, 077125, Romania
- National Institute of Materials Physics, Lab. of Atomic Structures and Defects in Advanced Materials, 405A Atomistilor Str., Magurele, Ilfov, 077125, Romania
| | - Alexandre Silva
- Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, Braga, 4710-057, Portugal
- Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, Braga, 4710-057, Portugal
| | - Veniero Lenzi
- Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, Braga, 4710-057, Portugal
- Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, Braga, 4710-057, Portugal
| | - Leonardo Domingues
- Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, Braga, 4710-057, Portugal
- Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, Braga, 4710-057, Portugal
| | - Megan O Hill
- Dept. of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Rd, Cambridge, CB3 OFS, United Kingdom
| | - Valentin S Teodorescu
- University of Bucharest, Faculty of Physics, Atomistilor 405, Magurele, Ilfov, 077125, Romania
- National Institute of Materials Physics, Lab. of Atomic Structures and Defects in Advanced Materials, 405A Atomistilor Str., Magurele, Ilfov, 077125, Romania
| | - Corneliu Ghica
- National Institute of Materials Physics, Lab. of Atomic Structures and Defects in Advanced Materials, 405A Atomistilor Str., Magurele, Ilfov, 077125, Romania
| | - Maria J M Gomes
- Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, Braga, 4710-057, Portugal
- Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, Braga, 4710-057, Portugal
| | - Mario Pereira
- Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, Braga, 4710-057, Portugal
- Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, Braga, 4710-057, Portugal
| | - Luís Marques
- Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, Braga, 4710-057, Portugal
- Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, Braga, 4710-057, Portugal
| | - Judith L MacManus-Driscoll
- Dept. of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Rd, Cambridge, CB3 OFS, United Kingdom
| | - José P B Silva
- Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, Braga, 4710-057, Portugal
- Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, Braga, 4710-057, Portugal
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19
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Patel SK, Robertson DD, Cheema SS, Salahuddin S, Tolbert SH. In-Situ Measurement of Magnetoelectric Coupling and Strain Transfer in Multiferroic Nanocomposites of CoFe 2O 4 and Hf 0.5Zr 0.5O 2 with Residual Porosity. Nano Lett 2023; 23:3267-3273. [PMID: 37071064 DOI: 10.1021/acs.nanolett.3c00083] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
With increasing applications for voltage-controlled magnetism, the need to more fully understand magnetoelectric coupling and strain transfer in nanostructured multiferroic composites has also increased. Here, multiferroic nanocomposites were synthesized using block copolymer templating to create mesoporous cobalt ferrite (CFO), followed by partly filling the pores with ferroelectric zirconium-substituted hafnia (HZO) using atomic layer deposition (ALD) to produce a porous multiferroic composite with enhanced mechanical flexibility. Upon electrical poling of the nanocomposite, we observed large changes in the magnetization. These changes partly relaxed upon removing the electric field, suggesting a strain-mediated mechanism. Both the anisotropic strain transfer from HZO to CFO and the strain relaxation after the field was removed were confirmed using high-resolution X-ray diffraction measurements collected during in-situ poling. The in-situ observation of both anisotropic strain transfer and large magnetization changes allows us to directly characterize the strong multiferroic coupling that can occur in flexible, nanostructured composites.
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Affiliation(s)
- Shreya K Patel
- Department of Chemistry and Biochemistry, University of California Los Angeles, Los Angeles, California 90095, United States
| | - Daniel D Robertson
- Department of Chemistry and Biochemistry, University of California Los Angeles, Los Angeles, California 90095, United States
| | - Suraj S Cheema
- Department of Electrical Engineering and Computer Sciences, University of California Berkeley, Berkeley, California 94720, United States
| | - Sayeef Salahuddin
- Department of Electrical Engineering and Computer Sciences, University of California Berkeley, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Sarah H Tolbert
- Department of Chemistry and Biochemistry, University of California Los Angeles, Los Angeles, California 90095, United States
- Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles, California 90095, United States
- The California NanoSystems Institute, University of California Los Angeles, Los Angeles, California 90095, United States
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20
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Li X, Zhong H, Lin T, Meng F, Gao A, Liu Z, Su D, Jin K, Ge C, Zhang Q, Gu L. Polarization Switching and Correlated Phase Transitions in Fluorite-Structure ZrO 2 Nanocrystals. Adv Mater 2023:e2207736. [PMID: 37044111 DOI: 10.1002/adma.202207736] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/24/2022] [Revised: 04/09/2023] [Indexed: 06/04/2023]
Abstract
Unconventional ferroelectricity in fluorite-structure oxides enables tremendous opportunities in nanoelectronics owing to their superior scalability and silicon compatibility. However, their polarization order and switching process remain elusive due to the challenges of visualizing oxygen ions in nanocrystalline films. In this work, the oxygen shifting during polarization switching and correlated polar-nonpolar phase transitions are directly captured among multiple metastable phases in freestanding ZrO2 thin films by low-dose integrated differential phase-contrast scanning transmission electron microscopy (iDPC-STEM). Bidirectional transitions between antiferroelectric and ferroelectric orders and interfacial polarization relaxation are clarified at unit-cell scale. Meanwhile, polarization switching is strongly correlated with Zr-O displacement in reversible martensitic transformation between monoclinic and orthorhombic phases and two-step tetrahedral-to-orthorhombic phase transition. These findings provide atomic insights into the transition pathways between metastable polymorphs and unravel the evolution of polarization orders in (anti)ferroelectric fluorite oxides.
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Affiliation(s)
- Xinyan Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Hai Zhong
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Science, Beijing, 100049, China
| | - Ting Lin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Science, Beijing, 100049, China
| | - Fanqi Meng
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Ang Gao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Science, Beijing, 100049, China
| | - Zhuohui Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Dong Su
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Kuijuan Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Science, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Chen Ge
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Science, Beijing, 100049, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Yangtze River Delta Physics Research Center Co. Ltd., Liyang, 213300, China
| | - Lin Gu
- Beijing National Center for Electron Microscopy and Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
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21
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Shi S, Xi H, Cao T, Lin W, Liu Z, Niu J, Lan D, Zhou C, Cao J, Su H, Zhao T, Yang P, Zhu Y, Yan X, Tsymbal EY, Tian H, Chen J. Interface-engineered ferroelectricity of epitaxial Hf 0.5Zr 0.5O 2 thin films. Nat Commun 2023; 14:1780. [PMID: 36997572 PMCID: PMC10063548 DOI: 10.1038/s41467-023-37560-3] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/27/2022] [Accepted: 03/22/2023] [Indexed: 04/01/2023] Open
Abstract
Ferroelectric hafnia-based thin films have attracted intense attention due to their compatibility with complementary metal-oxide-semiconductor technology. However, the ferroelectric orthorhombic phase is thermodynamically metastable. Various efforts have been made to stabilize the ferroelectric orthorhombic phase of hafnia-based films such as controlling the growth kinetics and mechanical confinement. Here, we demonstrate a key interface engineering strategy to stabilize and enhance the ferroelectric orthorhombic phase of the Hf0.5Zr0.5O2 thin film by deliberately controlling the termination of the bottom La0.67Sr0.33MnO3 layer. We find that the Hf0.5Zr0.5O2 films on the MnO2-terminated La0.67Sr0.33MnO3 have more ferroelectric orthorhombic phase than those on the LaSrO-terminated La0.67Sr0.33MnO3, while with no wake-up effect. Even though the Hf0.5Zr0.5O2 thickness is as thin as 1.5 nm, the clear ferroelectric orthorhombic (111) orientation is observed on the MnO2 termination. Our transmission electron microscopy characterization and theoretical modelling reveal that reconstruction at the Hf0.5Zr0.5O2/ La0.67Sr0.33MnO3 interface and hole doping of the Hf0.5Zr0.5O2 layer resulting from the MnO2 interface termination are responsible for the stabilization of the metastable ferroelectric phase of Hf0.5Zr0.5O2. We anticipate that these results will inspire further studies of interface-engineered hafnia-based systems.
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Affiliation(s)
- Shu Shi
- Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore, Singapore
| | - Haolong Xi
- School of Materials and Energy, Electron Microscopy Centre of Lanzhou University and Key Laboratory of Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou, 730000, PR China
- Center of Electron Microscope, State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Tengfei Cao
- Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE, 68588-0299, USA
| | - Weinan Lin
- Department of physics, Xiamen University, Xiamen, 361005, China
| | - Zhongran Liu
- Center of Electron Microscope, State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Jiangzhen Niu
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, Hebei University, Baoding, 071002, PR China
| | - Da Lan
- Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore, Singapore
| | - Chenghang Zhou
- Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore, Singapore
| | - Jing Cao
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 138634, Singapore, Singapore
| | - Hanxin Su
- Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore, Singapore
| | - Tieyang Zhao
- Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore, Singapore
| | - Ping Yang
- Singapore Synchrotron Light Source (SSLS), National University of Singapore, 5 Research Link, 117603, Singapore, Singapore
| | - Yao Zhu
- Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR), 138634, Singapore, Singapore
| | - Xiaobing Yan
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, Hebei University, Baoding, 071002, PR China.
| | - Evgeny Y Tsymbal
- Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE, 68588-0299, USA.
| | - He Tian
- Center of Electron Microscope, State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
- School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China.
| | - Jingsheng Chen
- Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore, Singapore.
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22
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Yang Q, Hu J, Fang YW, Jia Y, Yang R, Deng S, Lu Y, Dieguez O, Fan L, Zheng D, Zhang X, Dong Y, Luo Z, Wang Z, Wang H, Sui M, Xing X, Chen J, Tian J, Zhang L. Ferroelectricity in layered bismuth oxide down to 1 nanometer. Science 2023; 379:1218-1224. [PMID: 36952424 DOI: 10.1126/science.abm5134] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/25/2023]
Abstract
Atomic-scale ferroelectrics are of great interest for high-density electronics, particularly field-effect transistors, low-power logic, and nonvolatile memories. We devised a film with a layered structure of bismuth oxide that can stabilize the ferroelectric state down to 1 nanometer through samarium bondage. This film can be grown on a variety of substrates with a cost-effective chemical solution deposition. We observed a standard ferroelectric hysteresis loop down to a thickness of ~1 nanometer. The thin films with thicknesses that range from 1 to 4.56 nanometers possess a relatively large remanent polarization from 17 to 50 microcoulombs per square centimeter. We verified the structure with first-principles calculations, which also pointed to the material being a lone pair-driven ferroelectric material. The structure design of the ultrathin ferroelectric films has great potential for the manufacturing of atomic-scale electronic devices.
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Affiliation(s)
- Qianqian Yang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
| | - Jingcong Hu
- Beijing Key Laboratory of Microstructure and Properties of Solids, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
| | - Yue-Wen Fang
- Centro de Física de Materiales (CSIC-UPV/EHU), Manuel de Lardizabal Pasealekua 5, 20018 Donostia/San Sebastián, Spain
- Fisika Aplikatua Saila, Gipuzkoako Ingeniaritza Eskola, University of the Basque Country (UPV/EHU), Europa Plaza 1, 20018 Donostia/San Sebastián, Spain
| | - Yueyang Jia
- University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai, China
| | - Rui Yang
- University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai, China
| | - Shiqing Deng
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
| | - Yue Lu
- Beijing Key Laboratory of Microstructure and Properties of Solids, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
| | - Oswaldo Dieguez
- Department of Materials Science and Engineering, The Iby and Aladar Fleischman Faculty of Engineering, The Raymond and Beverly Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv, Israel
| | - Longlong Fan
- Institute of High Energy Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, China
| | - Dongxing Zheng
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Xixiang Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Yongqi Dong
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Zhenlin Luo
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Zhen Wang
- Institute of High Energy Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, China
| | - Huanhua Wang
- Institute of High Energy Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, China
| | - Manling Sui
- Beijing Key Laboratory of Microstructure and Properties of Solids, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
| | - Xianran Xing
- Institute of Solid State Chemistry, University of Science and Technology Beijing, Beijing 100083, China
| | - Jun Chen
- Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
| | - Jianjun Tian
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
| | - Linxing Zhang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
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23
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Liao J, Dai S, Peng RC, Yang J, Zeng B, Liao M, Zhou Y. HfO2-based ferroelectric thin film and memory device applications in the post-Moore era: A review. Fundamental Research 2023. [DOI: 10.1016/j.fmre.2023.02.010] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/05/2023] Open
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24
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Park JY, Lee DH, Park GH, Lee J, Lee Y, Park MH. A perspective on the physical scaling down of hafnia-based ferroelectrics. Nanotechnology 2023; 34:202001. [PMID: 36745914 DOI: 10.1088/1361-6528/acb945] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/01/2022] [Accepted: 02/05/2023] [Indexed: 06/18/2023]
Abstract
HfO2-based ferroelectric thin films have attracted significant interest for semiconductor device applications due to their compatibility with complementary metal oxide semiconductor (CMOS) technology. One of the benefits of HfO2-based ferroelectric thin films is their ability to be scaled to thicknesses as low as 10 nm while retaining their ferroelectric properties; a feat that has been difficult to accomplish with conventional perovskite-based ferroelectrics using CMOS-compatible processes. However, reducing the thickness limit of HfO2-based ferroelectric thin films below the sub 5 nm thickness regime while preserving their ferroelectric property remains a formidable challenge. This is because both the structural factors of HfO2, including polymorphism and orientation, and the electrical factors of HfO2-based devices, such as the depolarization field, are known to be highly dependent on the HfO2thickness. Accordingly, when the thickness of HfO2drops below 5 nm, these factors will become even more crucial. In this regard, the size effect of HfO2-based ferroelectric thin films is thoroughly discussed in the present review. The impact of thickness on the ferroelectric property of HfO2-based thin films and the electrical performance of HfO2-based ferroelectric semiconductor devices, such as ferroelectric random-access-memory, ferroelectric field-effect-transistor, and ferroelectric tunnel junction, is extensively discussed from the perspective of fundamental theory and experimental results. Finally, recent developments and reports on achieving ferroelectric HfO2at sub-5 nm thickness regime and their applications are discussed.
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Affiliation(s)
- Ju Yong Park
- Department of Materials Science and Engineering & Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea
| | - Dong Hyun Lee
- Department of Materials Science and Engineering & Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea
| | - Geun Hyeong Park
- Department of Materials Science and Engineering & Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea
| | - Jaewook Lee
- Department of Materials Science and Engineering & Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea
| | - Younghwan Lee
- Research Institute of Advanced Materials, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea
| | - Min Hyuk Park
- Department of Materials Science and Engineering & Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea
- Research Institute of Advanced Materials, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea
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25
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Zhu Z, Persson AE, Wernersson LE. Sensing single domains and individual defects in scaled ferroelectrics. Sci Adv 2023; 9:eade7098. [PMID: 36735784 PMCID: PMC9897661 DOI: 10.1126/sciadv.ade7098] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/02/2022] [Accepted: 01/04/2023] [Indexed: 06/18/2023]
Abstract
Ultra-scaled ferroelectrics are desirable for high-density nonvolatile memories and neuromorphic computing; however, for advanced applications, single domain dynamics and defect behavior need to be understood at scaled geometries. Here, we demonstrate the integration of a ferroelectric gate stack on a heterostructure tunnel field-effect transistor (TFET) with subthermionic operation. On the basis of the ultrashort effective channel created by the band-to-band tunneling process, the localized potential variations induced by single domains and individual defects are sensed without physical gate-length scaling required for conventional transistors. We electrically measure abrupt threshold voltage shifts and quantify the appearance of new individual defects activated by the ferroelectric switching. Our results show that ferroelectric films can be integrated on heterostructure devices and indicate that the intrinsic electrostatic control within ferroelectric TFETs provides the opportunity for ultrasensitive scale-free detection of single domains and defects in ultra-scaled ferroelectrics. Our approach opens a previously unidentified path for investigating the ultimate scaling limits of ferroelectronics.
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26
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Pesquera D, Fernández A, Khestanova E, Martin LW. Freestanding complex-oxide membranes. J Phys Condens Matter 2022; 34:383001. [PMID: 35779514 DOI: 10.1088/1361-648x/ac7dd5] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/22/2022] [Accepted: 07/01/2022] [Indexed: 06/15/2023]
Abstract
Complex oxides show a vast range of functional responses, unparalleled within the inorganic solids realm, making them promising materials for applications as varied as next-generation field-effect transistors, spintronic devices, electro-optic modulators, pyroelectric detectors, or oxygen reduction catalysts. Their stability in ambient conditions, chemical versatility, and large susceptibility to minute structural and electronic modifications make them ideal subjects of study to discover emergent phenomena and to generate novel functionalities for next-generation devices. Recent advances in the synthesis of single-crystal, freestanding complex oxide membranes provide an unprecedented opportunity to study these materials in a nearly-ideal system (e.g. free of mechanical/thermal interaction with substrates) as well as expanding the range of tools for tweaking their order parameters (i.e. (anti-)ferromagnetic, (anti-)ferroelectric, ferroelastic), and increasing the possibility of achieving novel heterointegration approaches (including interfacing dissimilar materials) by avoiding the chemical, structural, or thermal constraints in synthesis processes. Here, we review the recent developments in the fabrication and characterization of complex-oxide membranes and discuss their potential for unraveling novel physicochemical phenomena at the nanoscale and for further exploiting their functionalities in technologically relevant devices.
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Affiliation(s)
- David Pesquera
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST Campus UAB, Bellaterra, Barcelona 08193, Spain
| | - Abel Fernández
- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, United States of America
| | | | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, United States of America
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, United States of America
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