Features of structure, magnetic state and electrodynamic performance of SrFe12-xInxO19

Indium-substituted strontium hexaferrites were prepared by the conventional solid-phase reaction method. Neutron diffraction patterns were obtained at room temperature and analyzed using the Rietveld methods. A linear dependence of the unit cell parameters is found. In³⁺ cations are located mainly in octahedral positions of 4f_VI and 12 k. The average crystallite size varies within 0.84–0.65 μm. With increasing substitution, the T_C Curie temperature decreases monotonically down to ~ 520 K. ZFC and FC measurements showed a frustrated state. Upon substitution, the average and maximum sizes of ferrimagnetic clusters change in the opposite direction. The M_r remanent magnetization decreases down to ~ 20.2 emu/g at room temperature. The M_s spontaneous magnetization and the k_eff effective magnetocrystalline anisotropy constant are determined. With increasing substitution, the maximum of the ε^/ real part of permittivity decreases in magnitude from ~ 3.3 to ~ 1.9 and shifts towards low frequencies from ~ 45.5 GHz to ~ 37.4 GHz. The maximum of the tg(α) dielectric loss tangent decreases from ~ 1.0 to ~ 0.7 and shifts towards low frequencies from ~ 40.6 GHz to ~ 37.3 GHz. The low-frequency maximum of the μ^/ real part of permeability decreases from ~ 1.8 to ~ 0.9 and slightly shifts towards high frequencies up to ~ 34.7 GHz. The maximum of the tg(δ) magnetic loss tangent decreases from ~ 0.7 to ~ 0.5 and shifts slightly towards low frequencies from ~ 40.5 GHz to ~ 37.7 GHz. The discussion of microwave properties is based on the saturation magnetization, natural ferromagnetic resonance and dielectric polarization types.

Electrochemical Tuning of Metal Insulator Transition and Nonvolatile Resistive Switching in Superconducting Films

Modulation of carrier concentration in strongly correlated oxides offers the unique opportunity to induce different phases in the same material, which dramatically change their physical properties, providing novel concepts in oxide electronic devices with engineered functionalities. This work reports on the electric manipulation of the superconducting to insulator phase transition in YBa2Cu3O7-δ thin films by electrochemical oxygen doping. Both normal state resistance and the superconducting critical temperature can be reversibly manipulated in confined active volumes of the film by gate-tunable oxygen diffusion. Vertical and lateral oxygen mobility may be finely modulated, at the micro- and nano-scale, by tuning the applied bias voltage and operating temperature thus providing the basis for the design of homogeneous and flexible transistor-like devices with loss-less superconducting drain-source channels. We analyze the experimental results in light of a theoretical model, which incorporates thermally activated and electrically driven volume oxygen diffusion.

One-Step Route to Iron Oxide Hollow Nanocuboids by Cluster Condensation: Implementation in Water Remediation Technology

The fabrication procedure of hollow iron oxide nanoparticles with a large surface to volume ratio by a single-step gas condensation process at ambient temperature is presented. Fe clusters formed during the sputtering process are progressively transformed into hollow cuboids with oxide shells by the Kirkendall mechanism at the expense of oxygen captured inside the deposition chamber. TEM and Raman spectroscopy techniques point to magnetite as the main component of the nanocuboids; however, the magnetic behavior exhibited by the samples suggests the presence of FeO as well. In addition, these particles showed strong stability after several months of exposure to ambient conditions, making them of potential interest in diverse technological applications. In particular, these hierarchical hollow particles turned out to be very efficient for both As(III) and As(V) absorption (326 and 190 mg/g, respectively), thus making them of strong interest for drinking water remediation.

Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn

Antiferromagnetic spintronics is an emerging field; antiferromagnets can improve the functionalities of ferromagnets with higher response times, and having the information shielded against external magnetic field. Moreover, a large list of aniferromagnetic semiconductors and metals with Néel temperatures above room temperature exists. In the present manuscript, we persevere in the quest for the limits of how large can anisotropic magnetoresistance be in antiferromagnetic materials with very large spin-orbit coupling. We selected IrMn as a prime example of first-class moment (Mn) and spin-orbit (Ir) combination. Isothermal magnetotransport measurements in an antiferromagnetic-metal(IrMn)/ferromagnetic-insulator thin film bilayer have been performed. The metal/insulator structure with magnetic coupling between both layers allows the measurement of the modulation of the transport properties exclusively in the antiferromagnetic layer. Anisotropic magnetoresistance as large as 0.15% has been found, which is much larger than that for a bare IrMn layer. Interestingly, it has been observed that anisotropic magnetoresistance is strongly influenced by the field cooling conditions, signaling the dependence of the found response on the formation of domains at the magnetic ordering temperature.

Nitride tuning of lanthanide chromites

LnCrO_3−xN_x compounds with Ln = La, Pr and Nd represent one of the few examples of chromium oxynitrides and the first chromium oxynitride perovskites. Hole-doping of LnCrO₃ through O²⁻/N³⁻ anion substitution suppresses the antiferromagnetic transition far less drastically than cation substitutions.

Macroscopic evidence of nanoscale resistive switching in La2/3Sr1/3MnO3 micro-fabricated bridges

In this work we report on a combined macro, micro and nanoscale investigation where electronic transport properties through La⅔Sr⅓MnO3 (LSMO) microfabricated bridges, in which nano-sized resistive states are induced by using a conducting scanning probe microscope (C-SPM), are analyzed. The strategy intentionally avoids the standard capacitor-like geometry, thus allowing the study of the electronic transport properties of the locally modified region, and approaches the integration of functional oxides in low dimensional devices while providing macroscopic evidence of nanoscale resistive switching (RS). The metallic and ferromagnetic LSMO is locally modified from its low resistance state (LRS) to a high resistance state (HRS) when a bias voltage is applied on its surface through the conducting tip, which acts as a mobile electrode. Starting from a metallic oxide the electroforming process is not required, thus avoiding one of the major drawbacks for the implementation of memory devices based on RS phenomena. The application of a bias voltage generates an electric field that promotes charge depletion, leading to a strong increase of the resistance, i.e. to the HRS. This effect is not only confined to the outermost surface layer, its spatial extension and final HRS condition can be modulated by the magnitude and duration of the potential applied, opening the door to the implementation of multilevel devices. In addition, the half-metallic character, i.e. total spin polarization, of LSMO might allow the implementation of memory elements and active spintronic devices in the very same material. The stability of the HRS and LRS as a function of temperature, magnetic field and compliance current is also analyzed, allowing the characterization of the nature of the switching process and the active material.

Calibration of ac and dc magnetometers with a Dy2O3 standard

The ac susceptibility and magnetization curves of a glued Dy(2)O(3) powder sample are measured by an ac susceptometer and a dc superconducting quantum interference device magnetometer, both of which have been calibrated previously. It is shown that the magnetic moment of the paramagnetic sample as a function of field and temperature may be accurately expressed by a combination of the Curie-Weiss law and the Langevin function at T > 45 K with three adjusting parameters, so that the dc magnetization curves and the magnitude and phase of ac susceptibility at different values of dc bias field measured by any magnetometer can be calibrated by using Dy(2)O(3) as a standard. The expressions are empirical and cannot be justified in the entire field and temperature range by existing theories of paramagnetism. Below 10 K, indication of approaching a possible phase transition is found. It is shown that pure Dy(2)O(3) powder may be used as a primary standard, with susceptibility [13.28(T + 17)](-1) emu/Oe/g at T > 50 K and H < 10 kOe, in consistency with the Curie-Weiss law and the quantum mechanical theory of paramagnetism.