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Hejda M, Malysheva E, Owen-Newns D, Ali Al-Taai QR, Zhang W, Ortega-Piwonka I, Javaloyes J, Wasige E, Dolores-Calzadilla V, Figueiredo JML, Romeira B, Hurtado A. Artificial optoelectronic spiking neuron based on a resonant tunnelling diode coupled to a vertical cavity surface emitting laser. Nanophotonics 2023; 12:857-867. [PMID: 36909291 PMCID: PMC9995654 DOI: 10.1515/nanoph-2022-0362] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/21/2022] [Accepted: 10/26/2022] [Indexed: 06/18/2023]
Abstract
Excitable optoelectronic devices represent one of the key building blocks for implementation of artificial spiking neurons in neuromorphic (brain-inspired) photonic systems. This work introduces and experimentally investigates an opto-electro-optical (O/E/O) artificial neuron built with a resonant tunnelling diode (RTD) coupled to a photodetector as a receiver and a vertical cavity surface emitting laser as a transmitter. We demonstrate a well-defined excitability threshold, above which the neuron produces optical spiking responses with characteristic neural-like refractory period. We utilise its fan-in capability to perform in-device coincidence detection (logical AND) and exclusive logical OR (XOR) tasks. These results provide first experimental validation of deterministic triggering and tasks in an RTD-based spiking optoelectronic neuron with both input and output optical (I/O) terminals. Furthermore, we also investigate in simulation the prospects of the proposed system for nanophotonic implementation in a monolithic design combining a nanoscale RTD element and a nanolaser; therefore demonstrating the potential of integrated RTD-based excitable nodes for low footprint, high-speed optoelectronic spiking neurons in future neuromorphic photonic hardware.
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Affiliation(s)
- Matěj Hejda
- SUPA Department of Physics, Institute of Photonics, University of Strathclyde, Glasgow, UK
| | - Ekaterina Malysheva
- Eindhoven Hendrik Casimir Institute, Eindhoven University of Technology, Eindhoven, The Netherlands
| | - Dafydd Owen-Newns
- SUPA Department of Physics, Institute of Photonics, University of Strathclyde, Glasgow, UK
| | | | - Weikang Zhang
- SUPA Department of Physics, Institute of Photonics, University of Strathclyde, Glasgow, UK
| | | | - Julien Javaloyes
- Dept de Física and IAC-3, Universitat de les Illes Balears, Palma de Mallorca, Spain
| | - Edward Wasige
- High Frequency Electronics Group, University of Glasgow, Glasgow, UK
| | | | - José M. L. Figueiredo
- Centra-Ciências and Departamento de Física, Faculdade de Ciências, Universidade de Lisboa, Lisboa, Portugal
| | - Bruno Romeira
- INL – International Iberian Nanotechnology Laboratory, Ultrafast Bio- and Nanophotonics Group, Braga, Portugal
| | - Antonio Hurtado
- SUPA Department of Physics, Institute of Photonics, University of Strathclyde, Glasgow, UK
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Jacob B, Camarneiro F, Borme J, Bondarchuk O, Nieder JB, Romeira B. Surface Passivation of III-V GaAs Nanopillars by Low-Frequency Plasma Deposition of Silicon Nitride for Active Nanophotonic Devices. ACS Appl Electron Mater 2022; 4:3399-3410. [PMID: 36570334 PMCID: PMC9778088 DOI: 10.1021/acsaelm.2c00195] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Numerous efforts have been devoted to improve the electronic and optical properties of III-V compound materials via reduction of their nonradiative states, aiming at highly efficient III-V sub-micrometer active devices and circuits. Despite many advances, the poor reproducibility and short-term passivation effect of chemical treatments, such as sulfidation and nitridation, requires the use of protective encapsulation methods, not only to protect the surface, but also to provide electrical isolation for device manufacturing. There is still a controversial debate on which combination of chemical treatment and capping dielectric layer can best reproducibly protect the crystal surface of III-V materials while being compatible with readily available semiconductor-foundry plasma deposition methods. This work reports on a systematic experimental study on the role of sulfide ammonium chemical treatment followed by dielectric coating (either silicon oxide or nitride) in the passivation effect of GaAs/AlGaAs nanopillars. Our results conclusively show that, under ambient conditions, the best surface passivation is achieved using ammonium sulfide followed by encapsulation with a thin layer of silicon nitride by low-frequency plasma-enhanced chemical deposition. Here, the sulfurized GaAs surfaces, high level of hydrogen ions, and low-frequency (380 kHz) excitation plasma that enable intense bombardment of hydrogen, all seem to provide a combined active role in the passivation mechanism of the pillars by reducing the surface states. As a result, we observe up to a 29-fold increase of the photoluminescence (PL) integrated intensity for the best samples as compared to untreated nanopillars. X-ray photoelectron spectroscopy analysis confirms the best treatments show remarkable removal of gallium and arsenic native oxides. Time-resolved micro-PL measurements display nanosecond lifetimes resulting in a record-low surface recombination velocity of ∼1.1 × 104 cm s-1 for dry-etched GaAs nanopillars. We achieve robust, stable, and long-term passivated nanopillar surfaces, which creates expectations for remarkable high internal quantum efficiency (IQE > 0.5) in nanoscale light-emitting diodes. The enhanced performance paves the way to many other nanostructures and devices such as miniature resonators, lasers, photodetectors, and solar cells, opening remarkable prospects for GaAs active nanophotonic devices.
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Affiliation(s)
- Bejoys Jacob
- INL
− International Iberian Nanotechnology Laboratory, Ultrafast
Bio- and Nanophotonics group, Av. Mestre José Veiga s/n, 4715-330 Braga, Portugal
| | - Filipe Camarneiro
- INL
− International Iberian Nanotechnology Laboratory, Ultrafast
Bio- and Nanophotonics group, Av. Mestre José Veiga s/n, 4715-330 Braga, Portugal
| | - Jérôme Borme
- INL
− International Iberian Nanotechnology Laboratory, 2D Materials
and Devices group, Av.
Mestre José Veiga s/n, 4715-330 Braga, Portugal
| | - Oleksandr Bondarchuk
- INL
− International Iberian Nanotechnology Laboratory, Advanced
Electron Microscopy, Imaging and Spectroscopy Facility, Av. Mestre José Veiga s/n, 4715-330 Braga, Portugal
| | - Jana B. Nieder
- INL
− International Iberian Nanotechnology Laboratory, Ultrafast
Bio- and Nanophotonics group, Av. Mestre José Veiga s/n, 4715-330 Braga, Portugal
| | - Bruno Romeira
- INL
− International Iberian Nanotechnology Laboratory, Ultrafast
Bio- and Nanophotonics group, Av. Mestre José Veiga s/n, 4715-330 Braga, Portugal
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Adão RMR, Sun T, Romeira B, Alpuim P, Nieder JB. Spectral-temporal luminescence properties of Colloidal CdSe/ZnS Quantum Dots in relevant polymer matrices for integration in low turn-on voltage AC-driven LEDs. Opt Express 2022; 30:10563-10572. [PMID: 35473019 DOI: 10.1364/oe.449037] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2021] [Accepted: 02/04/2022] [Indexed: 06/14/2023]
Abstract
This work employs spectral and spectral-temporal Photoluminescence (PL) spectroscopy techniques to study the radiative mechanisms in colloidal CdSe/ZnS Quantum Dot (QD) thin films without and with 1% PMMA polymer matrix embedding (QDPMMA). The observed bimodal transient-spectral PL distributions reveal bandgap transitions and radiative recombinations after interdot electron transfer. The PMMA polymer embedding protects the QDs during the plasma-sputtering of inorganic layers electroluminescent (EL) devices, with minimal impact on the charge transfer properties. Further, a novel TiO2-based, all-electron bandgap, AC-driven QLED architecture is fabricated, yielding a surprisingly low turn-on voltage, with PL-identical and narrow-band EL emission. The symmetric TiO2 bilayer architecture is a promising test platform for alternative optical active materials.
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Adão RMR, Alves TL, Maibohm C, Romeira B, Nieder JB. Two-photon polymerization simulation and fabrication of 3D microprinted suspended waveguides for on-chip optical interconnects. Opt Express 2022; 30:9623-9642. [PMID: 35299385 DOI: 10.1364/oe.449641] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/26/2021] [Accepted: 01/26/2022] [Indexed: 06/14/2023]
Abstract
Quantum and neuromorphic computational platforms in integrated photonic circuits require next-generation optical functionalities. Often, increasingly complex on-chip light-routing that allow superpositions not attainable by planar technologies are paramount e.g. for artificial neural networks. Versatile 3D waveguides are achievable via two-photon polymerization (TPP)-based microprinting. Here, a 3D morphology prediction tool which considers experimental TPP parameters, is presented, enabling on-chip 3D waveguide performance simulations. The simulations allow reducing the cost-intensive systematic experimental optimization process. Fabricated 3D waveguides show optical transmission properties in agreement with simulations, demonstrating that the developed morphology prediction methodology is beneficial for the development of versatile on-chip and potentially inter-chip photonic interconnect technology.
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Adão RMR, Caño-Garcia M, Maibohm C, Romeira B, Nieder JB. Oscillator Finite-Difference Time-Domain (O-FDTD) electric field propagation model: integrated photonics and networks. EPJ Web Conf 2021. [DOI: 10.1051/epjconf/202125501005] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Abstract
The recently developed Lorentz Oscillator Model-inspired Oscillator Finite-Difference Time-Domain (O-FDTD) is one of the simplest FDTD models ever proposed, using a single field equation for electric field propagation. We demonstrate its versatility on various scales and benchmark its simulation performance against theory, conventional FDTD simulations, and experimental observations. The model’s broad applicability is demonstrated for (but not limited to) three contrasting realms: integrated photonics components on the nano- and micrometer scale, city-wide propagating radiofrequency signals reaching into the hundreds of meters scale, and for the first time, in support of 3D optical waveguide design that may play a key role in neuromorphic photonic computational devices.
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Romeira B, Borme J, Fonseca H, Gaspar J, Nieder JB. Efficient light extraction in subwavelength GaAs/AlGaAs nanopillars for nanoscale light-emitting devices. Opt Express 2020; 28:32302-32315. [PMID: 33114919 DOI: 10.1364/oe.402887] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/16/2020] [Accepted: 09/21/2020] [Indexed: 06/11/2023]
Abstract
This work reports on high extraction efficiency in subwavelength GaAs/AlGaAs semiconductor nanopillars. We achieve up to 37-fold enhancement of the photoluminescence (PL) intensity from sub-micrometer (sub-µm) pillars without requiring back reflectors, high-Q dielectric cavities, nor large 2D arrays or plasmonic effects. This is a result of a large extraction efficiency for nanopillars <500 nm width, estimated in the range of 33-57%, which is much larger than the typical low efficiency (∼2%) of micrometer pillars limited by total internal reflection. Time-resolved PL measurements allow us to estimate the nonradiative surface recombination of fabricated pillars. We conclusively show that vertical-emitting nanopillar-based LEDs, in the best case scenario of both reduced surface recombination and efficient light out-coupling, have the potential to achieve notable large external quantum efficiency (∼45%), whereas the efficiency of large µm-pillar planar LEDs, without further methods, saturates at ∼2%. These results offer a versatile method of light management in nanostructures with prospects to improve the performance of optoelectronic devices including nanoscale LEDs, nanolasers, single photon sources, photodetectors, and solar cells.
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Romeira B, Figueiredo JML, Javaloyes J. Delay dynamics of neuromorphic optoelectronic nanoscale resonators: Perspectives and applications. Chaos 2017; 27:114323. [PMID: 29195310 DOI: 10.1063/1.5008888] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
With the recent exponential growth of applications using artificial intelligence (AI), the development of efficient and ultrafast brain-like (neuromorphic) systems is crucial for future information and communication technologies. While the implementation of AI systems using computer algorithms of neural networks is emerging rapidly, scientists are just taking the very first steps in the development of the hardware elements of an artificial brain, specifically neuromorphic microchips. In this review article, we present the current state of the art of neuromorphic photonic circuits based on solid-state optoelectronic oscillators formed by nanoscale double barrier quantum well resonant tunneling diodes. We address, both experimentally and theoretically, the key dynamic properties of recently developed artificial solid-state neuron microchips with delayed perturbations and describe their role in the study of neural activity and regenerative memory. This review covers our recent research work on excitable and delay dynamic characteristics of both single and autaptic (delayed) artificial neurons including all-or-none response, spike-based data encoding, storage, signal regeneration and signal healing. Furthermore, the neural responses of these neuromorphic microchips display all the signatures of extended spatio-temporal localized structures (LSs) of light, which are reviewed here in detail. By taking advantage of the dissipative nature of LSs, we demonstrate potential applications in optical data reconfiguration and clock and timing at high-speeds and with short transients. The results reviewed in this article are a key enabler for the development of high-performance optoelectronic devices in future high-speed brain-inspired optical memories and neuromorphic computing.
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Affiliation(s)
- Bruno Romeira
- Centro de Electrónica, Optoelectrónica e Telecomunicações (CEOT), Departmento de Física, Universidade do Algarve, Campus de Gambelas, 8005-139 Faro, Portugal
| | - José M L Figueiredo
- Centro de Electrónica, Optoelectrónica e Telecomunicações (CEOT), Departmento de Física, Universidade do Algarve, Campus de Gambelas, 8005-139 Faro, Portugal
| | - Julien Javaloyes
- Departament de Física, Universitat de les Illes Balears, C/Valldemossa km 7.5, 07122 Palma de Mallorca, Spain
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Higuera-Rodriguez A, Romeira B, Birindelli S, Black LE, Smalbrugge E, van Veldhoven PJ, Kessels WMM, Smit MK, Fiore A. Ultralow Surface Recombination Velocity in Passivated InGaAs/InP Nanopillars. Nano Lett 2017; 17:2627-2633. [PMID: 28340296 PMCID: PMC5391499 DOI: 10.1021/acs.nanolett.7b00430] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/31/2017] [Revised: 03/22/2017] [Indexed: 05/26/2023]
Abstract
The III-V semiconductor InGaAs is a key material for photonics because it provides optical emission and absorption in the 1.55 μm telecommunication wavelength window. However, InGaAs suffers from pronounced nonradiative effects associated with its surface states, which affect the performance of nanophotonic devices for optical interconnects, namely nanolasers and nanodetectors. This work reports the strong suppression of surface recombination of undoped InGaAs/InP nanostructured semiconductor pillars using a combination of ammonium sulfide, (NH4)2S, chemical treatment and silicon oxide, SiOx, coating. An 80-fold enhancement in the photoluminescence (PL) intensity of submicrometer pillars at a wavelength of 1550 nm is observed as compared with the unpassivated nanopillars. The PL decay time of ∼0.3 μm wide square nanopillars is dramatically increased from ∼100 ps to ∼25 ns after sulfur treatment and SiOx coating. The extremely long lifetimes reported here, to our knowledge the highest reported to date for undoped InGaAs nanostructures, are associated with a record-low surface recombination velocity of ∼260 cm/s. We also conclusively show that the SiOx capping layer plays an active role in the passivation. These results are crucial for the future development of high-performance nanoscale optoelectronic devices for applications in energy-efficient data optical links, single-photon sensing, and photovoltaics.
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Affiliation(s)
- A. Higuera-Rodriguez
- Institute for Photonic Integration, Photonic Integration, Department
of Electrical Engineering, Photonics and Semiconductor Nanophysics, Department
of Applied Physics, Plasma and Materials Processing, Department of Applied Physics, and NanoLab@TU/eEindhoven University of Technology, Postbus 513, 5600
MB Eindhoven, The Netherlands
| | - B. Romeira
- Institute for Photonic Integration, Photonic Integration, Department
of Electrical Engineering, Photonics and Semiconductor Nanophysics, Department
of Applied Physics, Plasma and Materials Processing, Department of Applied Physics, and NanoLab@TU/eEindhoven University of Technology, Postbus 513, 5600
MB Eindhoven, The Netherlands
| | - S. Birindelli
- Institute for Photonic Integration, Photonic Integration, Department
of Electrical Engineering, Photonics and Semiconductor Nanophysics, Department
of Applied Physics, Plasma and Materials Processing, Department of Applied Physics, and NanoLab@TU/eEindhoven University of Technology, Postbus 513, 5600
MB Eindhoven, The Netherlands
| | - L. E. Black
- Institute for Photonic Integration, Photonic Integration, Department
of Electrical Engineering, Photonics and Semiconductor Nanophysics, Department
of Applied Physics, Plasma and Materials Processing, Department of Applied Physics, and NanoLab@TU/eEindhoven University of Technology, Postbus 513, 5600
MB Eindhoven, The Netherlands
| | - E. Smalbrugge
- Institute for Photonic Integration, Photonic Integration, Department
of Electrical Engineering, Photonics and Semiconductor Nanophysics, Department
of Applied Physics, Plasma and Materials Processing, Department of Applied Physics, and NanoLab@TU/eEindhoven University of Technology, Postbus 513, 5600
MB Eindhoven, The Netherlands
| | - P. J. van Veldhoven
- Institute for Photonic Integration, Photonic Integration, Department
of Electrical Engineering, Photonics and Semiconductor Nanophysics, Department
of Applied Physics, Plasma and Materials Processing, Department of Applied Physics, and NanoLab@TU/eEindhoven University of Technology, Postbus 513, 5600
MB Eindhoven, The Netherlands
| | - W. M. M. Kessels
- Institute for Photonic Integration, Photonic Integration, Department
of Electrical Engineering, Photonics and Semiconductor Nanophysics, Department
of Applied Physics, Plasma and Materials Processing, Department of Applied Physics, and NanoLab@TU/eEindhoven University of Technology, Postbus 513, 5600
MB Eindhoven, The Netherlands
| | - M. K. Smit
- Institute for Photonic Integration, Photonic Integration, Department
of Electrical Engineering, Photonics and Semiconductor Nanophysics, Department
of Applied Physics, Plasma and Materials Processing, Department of Applied Physics, and NanoLab@TU/eEindhoven University of Technology, Postbus 513, 5600
MB Eindhoven, The Netherlands
| | - A. Fiore
- Institute for Photonic Integration, Photonic Integration, Department
of Electrical Engineering, Photonics and Semiconductor Nanophysics, Department
of Applied Physics, Plasma and Materials Processing, Department of Applied Physics, and NanoLab@TU/eEindhoven University of Technology, Postbus 513, 5600
MB Eindhoven, The Netherlands
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Dolores-Calzadilla V, Romeira B, Pagliano F, Birindelli S, Higuera-Rodriguez A, van Veldhoven PJ, Smit MK, Fiore A, Heiss D. Waveguide-coupled nanopillar metal-cavity light-emitting diodes on silicon. Nat Commun 2017; 8:14323. [PMID: 28148954 PMCID: PMC5296653 DOI: 10.1038/ncomms14323] [Citation(s) in RCA: 65] [Impact Index Per Article: 9.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/27/2016] [Accepted: 12/14/2016] [Indexed: 12/03/2022] Open
Abstract
Nanoscale light sources using metal cavities have been proposed to enable high integration density, efficient operation at low energy per bit and ultra-fast modulation, which would make them attractive for future low-power optical interconnects. For this application, such devices are required to be efficient, waveguide-coupled and integrated on a silicon substrate. We demonstrate a metal-cavity light-emitting diode coupled to a waveguide on silicon. The cavity consists of a metal-coated III–V semiconductor nanopillar which funnels a large fraction of spontaneous emission into the fundamental mode of an InP waveguide bonded to a silicon wafer showing full compatibility with membrane-on-Si photonic integration platforms. The device was characterized through a grating coupler and shows on-chip external quantum efficiency in the 10−4–10−2 range at tens of microamp current injection levels, which greatly exceeds the performance of any waveguide-coupled nanoscale light source integrated on silicon in this current range. Furthermore, direct modulation experiments reveal sub-nanosecond electro-optical response with the potential for multi gigabit per second modulation speeds. Despite much progress, nanoscale light sources suitable for photonic integration are lacking. Here, the authors present a metal-cavity nanopillar LED on a silicon substrate working at telecommunications wavelengths, which demonstrates compatibility with membrane-on-Si photonic integration platforms.
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Affiliation(s)
- V Dolores-Calzadilla
- Photonic Integration, Department of Electrical Engineering, Eindhoven University of Technology, Postbus 513, 5600 MB Eindhoven, The Netherlands
| | - B Romeira
- Photonics and Semiconductor Nanophysics, Department of Applied Physics, Eindhoven University of Technology, Postbus 513, 5600 MB Eindhoven, The Netherlands
| | - F Pagliano
- Photonics and Semiconductor Nanophysics, Department of Applied Physics, Eindhoven University of Technology, Postbus 513, 5600 MB Eindhoven, The Netherlands
| | - S Birindelli
- Photonics and Semiconductor Nanophysics, Department of Applied Physics, Eindhoven University of Technology, Postbus 513, 5600 MB Eindhoven, The Netherlands
| | - A Higuera-Rodriguez
- Photonic Integration, Department of Electrical Engineering, Eindhoven University of Technology, Postbus 513, 5600 MB Eindhoven, The Netherlands
| | - P J van Veldhoven
- NanoLab@TU/e, Eindhoven University of Technology, Postbus 513, 5600 MB Eindhoven, The Netherlands
| | - M K Smit
- Photonic Integration, Department of Electrical Engineering, Eindhoven University of Technology, Postbus 513, 5600 MB Eindhoven, The Netherlands
| | - A Fiore
- Photonics and Semiconductor Nanophysics, Department of Applied Physics, Eindhoven University of Technology, Postbus 513, 5600 MB Eindhoven, The Netherlands
| | - D Heiss
- Photonic Integration, Department of Electrical Engineering, Eindhoven University of Technology, Postbus 513, 5600 MB Eindhoven, The Netherlands
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Romeira B, Avó R, Figueiredo JML, Barland S, Javaloyes J. Regenerative memory in time-delayed neuromorphic photonic resonators. Sci Rep 2016; 6:19510. [PMID: 26781583 PMCID: PMC4726037 DOI: 10.1038/srep19510] [Citation(s) in RCA: 81] [Impact Index Per Article: 10.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/25/2015] [Accepted: 12/09/2015] [Indexed: 11/29/2022] Open
Abstract
We investigate a photonic regenerative memory based upon a neuromorphic oscillator with a delayed self-feedback (autaptic) connection. We disclose the existence of a unique temporal response characteristic of localized structures enabling an ideal support for bits in an optical buffer memory for storage and reshaping of data information. We link our experimental implementation, based upon a nanoscale nonlinear resonant tunneling diode driving a laser, to the paradigm of neuronal activity, the FitzHugh-Nagumo model with delayed feedback. This proof-of-concept photonic regenerative memory might constitute a building block for a new class of neuron-inspired photonic memories that can handle high bit-rate optical signals.
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Affiliation(s)
- B Romeira
- Centro de Electrónica, Optoelectrónica e Telecomunicações (CEOT), Departmento de Física, Universidade do Algarve, Campus de Gambelas, 8005-139, Faro, Portugal
| | - R Avó
- Centro de Electrónica, Optoelectrónica e Telecomunicações (CEOT), Departmento de Física, Universidade do Algarve, Campus de Gambelas, 8005-139, Faro, Portugal
| | - José M L Figueiredo
- Centro de Electrónica, Optoelectrónica e Telecomunicações (CEOT), Departmento de Física, Universidade do Algarve, Campus de Gambelas, 8005-139, Faro, Portugal
| | - S Barland
- Institut Non-Linéaire de Nice, Université de Nice Sophia Antipolis, CNRS UMR 7335, 06560 Valbonne, France
| | - J Javaloyes
- Departament de Física, Universitat de les Illes Baleares, C/Valldemossa km 7.5, 07122 Mallorca, Spain
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Romeira B, Javaloyes J, Ironside CN, Figueiredo JML, Balle S, Piro O. Excitability and optical pulse generation in semiconductor lasers driven by resonant tunneling diode photo-detectors. Opt Express 2013; 21:20931-20940. [PMID: 24103966 DOI: 10.1364/oe.21.020931] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
We demonstrate, experimentally and theoretically, excitable nanosecond optical pulses in optoelectronic integrated circuits operating at telecommunication wavelengths (1550 nm) comprising a nanoscale double barrier quantum well resonant tunneling diode (RTD) photo-detector driving a laser diode (LD). When perturbed either electrically or optically by an input signal above a certain threshold, the optoelectronic circuit generates short electrical and optical excitable pulses mimicking the spiking behavior of biological neurons. Interestingly, the asymmetric nonlinear characteristic of the RTD-LD allows for two different regimes where one obtain either single pulses or a burst of multiple pulses. The high-speed excitable response capabilities are promising for neurally inspired information applications in photonics.
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Romeira B, Pessoa LM, Salgado HM, Ironside CN, Figueiredo JML. Photo-detectors integrated with resonant tunneling diodes. Sensors (Basel) 2013; 13:9464-82. [PMID: 23881142 PMCID: PMC3758658 DOI: 10.3390/s130709464] [Citation(s) in RCA: 36] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/14/2013] [Revised: 07/09/2013] [Accepted: 07/16/2013] [Indexed: 11/16/2022]
Abstract
We report on photo-detectors consisting of an optical waveguide that incorporates a resonant tunneling diode (RTD). Operating at wavelengths around 1.55 μm in the optical communications C band we achieve maximum sensitivities of around 0.29 A/W which is dependent on the bias voltage. This is due to the nature of RTD nonlinear current-voltage characteristic that has a negative differential resistance (NDR) region. The resonant tunneling diode photo-detector (RTD-PD) can be operated in either non-oscillating or oscillating regimes depending on the bias voltage quiescent point. The oscillating regime is apparent when the RTD-PD is biased in the NDR region giving rise to electrical gain and microwave self-sustained oscillations Taking advantage of the RTD's NDR distinctive characteristics, we demonstrate efficient detection of gigahertz (GHz) modulated optical carriers and optical control of a RTD GHz oscillator. RTD-PD based devices can have applications in generation and optical control of GHz low-phase noise oscillators, clock recovery systems, and fiber optic enabled radio frequency communication systems.
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Affiliation(s)
- Bruno Romeira
- Centro de Electrónica, Optoelectrónica e Telecomunicaçõe s (CEOT), Departamento de Física, Universidade do Algarve, Campus de Gambelas, 8005-139 Faro, Portugal; E-Mail:
- Author to whom correspondence should be addressed; E-Mail: ; Tel.: +351-289-800-905; Fax: +351-289-800-066
| | - Luis M. Pessoa
- INESC TEC, Faculdade de Engenharia, Universidade do Porto, 4200-465 Porto, Portugal; E-Mails: (L.P.); (H.S.)
| | - Henrique M. Salgado
- INESC TEC, Faculdade de Engenharia, Universidade do Porto, 4200-465 Porto, Portugal; E-Mails: (L.P.); (H.S.)
| | | | - José M. L. Figueiredo
- Centro de Electrónica, Optoelectrónica e Telecomunicaçõe s (CEOT), Departamento de Física, Universidade do Algarve, Campus de Gambelas, 8005-139 Faro, Portugal; E-Mail:
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Romeira B, Seunarine K, Ironside CN, Kelly AE, Figueiredo JML. A Self-Synchronized Optoelectronic Oscillator based on an RTD Photo-Detector and a Laser Diode. IEEE Photonics Technol Lett 2011; 23:1148-1150. [PMID: 23814452 PMCID: PMC3695550 DOI: 10.1109/lpt.2011.2154320] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2023]
Abstract
We propose and demonstrate a simple and stable low-phase noise optoelectronic oscillator (OEO) that uses a laser diode, an optical fiber delay line and a resonant tunneling diode (RTD) free-running oscillator that is monolithic integrated with a waveguide photo-detector. The RTD-OEO exhibits single-side band phase noise power below -100 dBc/Hz with more than 30 dB noise suppression at 10 kHz from the center free-running frequency for fiber loop lengths around 1.2 km. The oscillator power consumption is below 0.55 W, and can be controlled either by the injected optical power or the fiber delay line. The RTD-OEO stability is achieved without using other high-speed optical/optoelectronic components and amplification.
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Affiliation(s)
- Bruno Romeira
- Centro de Electrónica, Optoelectrónica e Telecomunicações, Universidade do Algarve, 8005-139 Faro, Portugal ()
| | - Kris Seunarine
- Department of Electronics and Electrical Engineering, University of Glasgow, G12 8LT Glasgow, U.K.()
| | - Charles N. Ironside
- Department of Electronics and Electrical Engineering, University of Glasgow, G12 8LT Glasgow, U.K.()
| | - Anthony E. Kelly
- Department of Electronics and Electrical Engineering, University of Glasgow, G12 8LT Glasgow, U.K.()
| | - José M. L. Figueiredo
- Centro de Electrónica, Optoelectrónica e Telecomunicações, Universidade do Algarve, 8005-139 Faro, Portugal ()
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