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Lozano-Chamizo L, Márquez C, Marciello M, Galdon JC, de la Fuente-Zapico E, Martinez-Mazón P, Gonzalez-Rumayor V, Filice M, Gamiz F. High enhancement of sensitivity and reproducibility in label-free SARS-CoV-2 detection with graphene field-effect transistor sensors through precise surface biofunctionalization control. Biosens Bioelectron 2024; 250:116040. [PMID: 38290380 DOI: 10.1016/j.bios.2024.116040] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/28/2023] [Revised: 12/14/2023] [Accepted: 01/12/2024] [Indexed: 02/01/2024]
Abstract
The COVID-19 pandemic has taught us valuable lessons, especially the urgent need for a widespread, rapid and sensitive diagnostic tool. To this, the integration of bidimensional nanomaterials, particularly graphene, into point-of-care biomedical devices is a groundbreaking strategy able to potentially revolutionize the diagnostic landscape. Despite advancements in the fabrication of these biosensors, the relationship between their surface biofunctionalization and sensing performance remains unclear. Here, we demonstrate that the combination of careful sensor fabrication and its precise surface biofunctionalization is crucial for exalting the sensing performances of 2D biosensors. Specifically, we have biofunctionalized Graphene Field-Effect Transistor (GFET) sensors surface through different biochemical reactions to promote either random/heterogeneous or oriented/homogeneous immobilization of the Anti-SARS-CoV-2 spike protein antibody. Each strategy was thoroughly characterized by in-silico simulations, physicochemical and biochemical techniques and electrical characterization. Subsequently, both biosensors were tested in the label-free direct titration of SARS-CoV-2 virus in simulated clinical samples, avoiding sample preprocessing and within short timeframes. Remarkably, the oriented GFET biosensor exhibited significantly enhanced reproducibility and responsiveness, surpassing the detection sensitivity of conventional non-oriented GFET by more than twofold. This breakthrough not only involves direct implications for COVID-19 surveillance and next pandemic preparedness but also clarify an unexplored mechanistic dimension of biosensor research utilizing 2D-nanomaterials.
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Affiliation(s)
- Laura Lozano-Chamizo
- Nanobiotechnology for Life Sciences Laboratory, Department of Chemistry in Pharmaceutical Sciences, Faculty of Pharmacy, Universidad Complutense de Madrid (UCM), Plaza Ramón y Cajal s/n, E-28040, Madrid, Spain; Microscopy and Dynamic Imaging Unit, Fundación Centro Nacional de Investigaciones Cardiovasculares Carlos III (CNIC), Calle Melchor Fernández Almagro 3, E-28029, Madrid, Spain; Atrys Health, E-28001, Madrid, Spain
| | - Carlos Márquez
- Nanoelectronics Research Group, Department of Electronics, CITIC-UGR (Research Center for Information and Communication Technologies), University of Granada, Spain; Instituto de Investigación Biosanitaria de Granada ibs.GRANADA, 18012, Granada, Spain
| | - Marzia Marciello
- Nanobiotechnology for Life Sciences Laboratory, Department of Chemistry in Pharmaceutical Sciences, Faculty of Pharmacy, Universidad Complutense de Madrid (UCM), Plaza Ramón y Cajal s/n, E-28040, Madrid, Spain; Microscopy and Dynamic Imaging Unit, Fundación Centro Nacional de Investigaciones Cardiovasculares Carlos III (CNIC), Calle Melchor Fernández Almagro 3, E-28029, Madrid, Spain
| | - José Carlos Galdon
- Nanoelectronics Research Group, Department of Electronics, CITIC-UGR (Research Center for Information and Communication Technologies), University of Granada, Spain; Instituto de Investigación Biosanitaria de Granada ibs.GRANADA, 18012, Granada, Spain
| | - Elsa de la Fuente-Zapico
- Nanoelectronics Research Group, Department of Electronics, CITIC-UGR (Research Center for Information and Communication Technologies), University of Granada, Spain; Instituto de Investigación Biosanitaria de Granada ibs.GRANADA, 18012, Granada, Spain
| | - Paula Martinez-Mazón
- Nanoelectronics Research Group, Department of Electronics, CITIC-UGR (Research Center for Information and Communication Technologies), University of Granada, Spain; Instituto de Investigación Biosanitaria de Granada ibs.GRANADA, 18012, Granada, Spain
| | | | - Marco Filice
- Nanobiotechnology for Life Sciences Laboratory, Department of Chemistry in Pharmaceutical Sciences, Faculty of Pharmacy, Universidad Complutense de Madrid (UCM), Plaza Ramón y Cajal s/n, E-28040, Madrid, Spain; Microscopy and Dynamic Imaging Unit, Fundación Centro Nacional de Investigaciones Cardiovasculares Carlos III (CNIC), Calle Melchor Fernández Almagro 3, E-28029, Madrid, Spain.
| | - Francisco Gamiz
- Nanoelectronics Research Group, Department of Electronics, CITIC-UGR (Research Center for Information and Communication Technologies), University of Granada, Spain; Instituto de Investigación Biosanitaria de Granada ibs.GRANADA, 18012, Granada, Spain.
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Lee MW, Chuang CW, Gamiz F, Chang EY, Lin YC. Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications. Micromachines (Basel) 2023; 15:81. [PMID: 38258200 PMCID: PMC10818802 DOI: 10.3390/mi15010081] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2023] [Revised: 12/25/2023] [Accepted: 12/28/2023] [Indexed: 01/24/2024]
Abstract
In this paper, AlGaN/GaN high-electron-mobility transistors (HEMTs) with ohmic etching patterns (OEPs) "fabricated to improve device radio frequency (RF) performance for Ka-band applications" are reported. The fabricated AlGaN/GaN HEMTs with OEP structures were used to reduce the source and drain resistances (Rs and Rd) for RF performance improvements. Within the proposed study using 1 μm hole, 3 μm hole, 1 μm line, and 3 μm line OEP HEMTs with 2 × 25 μm gate widths, the small signal performance, large signal performance, and minimum noise figure (NFmin) with optimized values were measured for 1 μm line OEP HEMTs. The cut-off frequency (fT) and maximum oscillation frequency (fmax) value of the 1 μm line OEP device exhibited optimized values of 36.4 GHz and 158.29 GHz, respectively. The load-pull results show that the 1 μm line OEP HEMTs exhibited an optimized maximum output power density (Pout, max) of 1.94 W/mm at 28 GHz. The 1 μm line OEP HEMTs also exhibited an optimized NFmin of 1.75 dB at 28 GHz. The increase in the contact area between the ohmic metal and the AlGaN barrier layer was used to reduce the contact resistance of the OEP HEMTs, and the results show that the 1 μm line OEP HEMT could be fabricated, producing the best improvement in RF performance for Ka-band applications.
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Affiliation(s)
- Ming-Wen Lee
- International College of Semiconductor Technology, National Yang Ming Chiao Tung University (NYCU), Hsinchu City 30010, Taiwan; (M.-W.L.); (C.-W.C.); (E.-Y.C.)
- Department of Electronics and Computer Technology, University of Granada, 18014 Granada, Spain;
| | - Cheng-Wei Chuang
- International College of Semiconductor Technology, National Yang Ming Chiao Tung University (NYCU), Hsinchu City 30010, Taiwan; (M.-W.L.); (C.-W.C.); (E.-Y.C.)
| | - Francisco Gamiz
- Department of Electronics and Computer Technology, University of Granada, 18014 Granada, Spain;
| | - Edward-Yi Chang
- International College of Semiconductor Technology, National Yang Ming Chiao Tung University (NYCU), Hsinchu City 30010, Taiwan; (M.-W.L.); (C.-W.C.); (E.-Y.C.)
- Institute of Microengineering and Nanoelectronics, University Kebangsaan Malaysia, Bangi 43600, Malaysia
| | - Yueh-Chin Lin
- International College of Semiconductor Technology, National Yang Ming Chiao Tung University (NYCU), Hsinchu City 30010, Taiwan; (M.-W.L.); (C.-W.C.); (E.-Y.C.)
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Lee MW, Lin YC, Hsu HT, Gamiz F, Chang EY. Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications. Micromachines (Basel) 2023; 14:mi14050931. [PMID: 37241557 DOI: 10.3390/mi14050931] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2023] [Revised: 04/19/2023] [Accepted: 04/24/2023] [Indexed: 05/28/2023]
Abstract
In this paper, AlGaN/GaN high electron mobility transistors (HEMTs) with etched-fin gate structures fabricated to improve device linearity for Ka-band application are reported. Within the proposed study of planar, one-etched-fin, four-etched-fin, and nine-etched-fin devices, which have 50-μm, 25-μm, 10-μm, and 5-μm partial gate widths, respectively, the four-etched-fin gate AlGaN/GaN HEMT devices have demonstrated optimized device linearity with respect to the extrinsic transconductance (Gm) value, the output third order intercept point (OIP3), and the third-order intermodulation output power (IMD3) level. The IMD3 is improved by 7 dB at 30 GHz for the 4 × 50 μm HEMT device. The OIP3 is found to reach a maximum value of 36.43 dBm with the four-etched-fin device, which exhibits high potential for the advancement of wireless power amplifier components for Ka band applications.
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Affiliation(s)
- Ming-Wen Lee
- International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu City 30010, Taiwan
- Department of Electronics and Computer Technology, University of Granada, 18014 Granada, Spain
| | - Yueh-Chin Lin
- International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu City 30010, Taiwan
| | - Heng-Tung Hsu
- International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu City 30010, Taiwan
| | - Francisco Gamiz
- Department of Electronics and Computer Technology, University of Granada, 18014 Granada, Spain
| | - Edward-Yi Chang
- International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu City 30010, Taiwan
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Padilla JL, Medina-Bailon C, Palomares A, Donetti L, Navarro C, Sampedro C, Gamiz F. Analysis of the Reformulated Source to Drain Tunneling Probability for Improving the Accuracy of a Multisubband Ensemble Monte Carlo Simulator. Micromachines 2022; 13:mi13040533. [PMID: 35457838 PMCID: PMC9026498 DOI: 10.3390/mi13040533] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/23/2021] [Revised: 03/22/2022] [Accepted: 03/25/2022] [Indexed: 02/04/2023]
Abstract
As an attempt to improve the description of the tunneling current that arises in ultrascaled nanoelectronic devices when charge carriers succeed in traversing the potential barrier between source and drain, an alternative and more accurate non-local formulation of the tunneling probability was suggested. This improvement of the probability computation might result of particular interest in the context of Monte Carlo simulations where the utilization of the conventional Wentzel-Kramers-Brillouin (WKB) approximation tends to overestimate the number of particles experiencing this type of direct tunneling. However, in light of the reformulated expression for the tunneling probability, it becomes of paramount importance to assess the type of potentials for which it behaves adequately. We demonstrate that, for ensuring boundedness, the top of the potential barrier cannot feature a plateau, but rather has to behave quadratically as one approaches its maximum. Moreover, we show that monotonicity of the reformulated tunneling probability is not guaranteed by boundedness and requires an additional constraint regarding the derivative of the prefactor that modifies the traditional WKB tunneling probability.
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Affiliation(s)
- Jose Luis Padilla
- Nanoelectronics Research Group, Departamento de Electrónica y Tecnología de Computadores, Universidad de Granada, 18071 Granada, Spain; (C.M.-B.); (L.D.); (C.N.); (C.S.); (F.G.)
- Centro de Investigación en Tecnologías de la Información y las Comunicaciones, Universidad de Granada, 18071 Granada, Spain
- Correspondence:
| | - Cristina Medina-Bailon
- Nanoelectronics Research Group, Departamento de Electrónica y Tecnología de Computadores, Universidad de Granada, 18071 Granada, Spain; (C.M.-B.); (L.D.); (C.N.); (C.S.); (F.G.)
- Centro de Investigación en Tecnologías de la Información y las Comunicaciones, Universidad de Granada, 18071 Granada, Spain
| | - Antonio Palomares
- Departamento de Matemática Aplicada, Universidad de Granada, 18071 Granada, Spain;
| | - Luca Donetti
- Nanoelectronics Research Group, Departamento de Electrónica y Tecnología de Computadores, Universidad de Granada, 18071 Granada, Spain; (C.M.-B.); (L.D.); (C.N.); (C.S.); (F.G.)
- Centro de Investigación en Tecnologías de la Información y las Comunicaciones, Universidad de Granada, 18071 Granada, Spain
| | - Carlos Navarro
- Nanoelectronics Research Group, Departamento de Electrónica y Tecnología de Computadores, Universidad de Granada, 18071 Granada, Spain; (C.M.-B.); (L.D.); (C.N.); (C.S.); (F.G.)
- Centro de Investigación en Tecnologías de la Información y las Comunicaciones, Universidad de Granada, 18071 Granada, Spain
| | - Carlos Sampedro
- Nanoelectronics Research Group, Departamento de Electrónica y Tecnología de Computadores, Universidad de Granada, 18071 Granada, Spain; (C.M.-B.); (L.D.); (C.N.); (C.S.); (F.G.)
- Centro de Investigación en Tecnologías de la Información y las Comunicaciones, Universidad de Granada, 18071 Granada, Spain
| | - Francisco Gamiz
- Nanoelectronics Research Group, Departamento de Electrónica y Tecnología de Computadores, Universidad de Granada, 18071 Granada, Spain; (C.M.-B.); (L.D.); (C.N.); (C.S.); (F.G.)
- Centro de Investigación en Tecnologías de la Información y las Comunicaciones, Universidad de Granada, 18071 Granada, Spain
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Cristoloveanu S, Lacord J, Martinie S, Navarro C, Gamiz F, Wan J, Dirani HE, Lee K, Zaslavsky A. A Review of Sharp-Switching Band-Modulation Devices. Micromachines (Basel) 2021; 12:1540. [PMID: 34945390 PMCID: PMC8705352 DOI: 10.3390/mi12121540] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/18/2021] [Revised: 12/06/2021] [Accepted: 12/08/2021] [Indexed: 12/04/2022]
Abstract
This paper reviews the recently-developed class of band-modulation devices, born from the recent progress in fully-depleted silicon-on-insulator (FD-SOI) and other ultrathin-body technologies, which have enabled the concept of gate-controlled electrostatic doping. In a lateral PIN diode, two additional gates can construct a reconfigurable PNPN structure with unrivalled sharp-switching capability. We describe the implementation, operation, and various applications of these band-modulation devices. Physical and compact models are presented to explain the output and transfer characteristics in both steady-state and transient modes. Not only can band-modulation devices be used for quasi-vertical current switching, but they also show promise for compact capacitorless memories, electrostatic discharge (ESD) protection, sensing, and reconfigurable circuits, while retaining full compatibility with modern silicon processing and standard room-temperature low-voltage operation.
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Affiliation(s)
- Sorin Cristoloveanu
- IMEP-LAHC, Université Grenoble Alpes, Grenoble INP & CNRS, 3 Parvis Louis Néel, CS 50257, CEDEX 1, 38016 Grenoble, France; (H.E.D.); (K.L.)
| | - Joris Lacord
- CEA, LETI, MINATEC Campus, Université Grenoble Alpes, 17 Rue des Martyrs, CEDEX 9, 38054 Grenoble, France; (J.L.); (S.M.)
| | - Sébastien Martinie
- CEA, LETI, MINATEC Campus, Université Grenoble Alpes, 17 Rue des Martyrs, CEDEX 9, 38054 Grenoble, France; (J.L.); (S.M.)
| | - Carlos Navarro
- Nanoelectronics Research Group, CITIC-UGR, University of Granada, 18071 Granada, Spain; (C.N.); (F.G.)
| | - Francisco Gamiz
- Nanoelectronics Research Group, CITIC-UGR, University of Granada, 18071 Granada, Spain; (C.N.); (F.G.)
| | - Jing Wan
- State Key Lab of ASIC and System, School of Information Science and Engineering, Fudan University, Shanghai 200433, China;
| | - Hassan El Dirani
- IMEP-LAHC, Université Grenoble Alpes, Grenoble INP & CNRS, 3 Parvis Louis Néel, CS 50257, CEDEX 1, 38016 Grenoble, France; (H.E.D.); (K.L.)
| | - Kyunghwa Lee
- IMEP-LAHC, Université Grenoble Alpes, Grenoble INP & CNRS, 3 Parvis Louis Néel, CS 50257, CEDEX 1, 38016 Grenoble, France; (H.E.D.); (K.L.)
| | - Alexander Zaslavsky
- Department of Physics and School of Engineering, Brown University, Providence, RI 02912, USA;
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Marquez C, Salazar N, Gity F, Galdon JC, Navarro C, Sampedro C, Hurley PK, Chang EY, Gamiz F. Hysteresis in As-Synthesized MoS 2 Transistors: Origin and Sensing Perspectives. Micromachines (Basel) 2021; 12:mi12060646. [PMID: 34073095 PMCID: PMC8230200 DOI: 10.3390/mi12060646] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/30/2021] [Revised: 05/24/2021] [Accepted: 05/30/2021] [Indexed: 11/16/2022]
Abstract
Two-dimensional materials, including molybdenum disulfide (MoS2), present promising sensing and detecting capabilities thanks to their extreme sensitivity to changes in the environment. Their reduced thickness also facilitates the electrostatic control of the channel and opens the door to flexible electronic applications. However, these materials still exhibit integration difficulties with complementary-MOS standardized processes and methods. The device reliability is compromised by gate insulator selection and the quality of the metal/semiconductor and semiconductor/insulator interfaces. Despite some improvements regarding mobility, hysteresis and Schottky barriers having been reported thanks to metal engineering, vertically stacked heterostructures with compatible thin-layers (such as hexagonal boron nitride or device encapsulation) variability is still an important constraint to sensor performance. In this work, we fabricated and extensively characterized the reliability of as-synthesized back-gated MoS2 transistors. Under atmospheric and room-temperature conditions, these devices present a wide electrical hysteresis (up to 5 volts) in their transfer characteristics. However, their performance is highly influenced by the temperature, light and pressure conditions. The singular signature in the time response of the devices points to adsorbates and contaminants inducing mobile charges and trapping/detrapping carrier phenomena as the mechanisms responsible for time-dependent current degradation. Far from being only a reliability issue, we demonstrated a method to exploit this device response to perform light, temperature and/or pressure sensors in as-synthesized devices. Two orders of magnitude drain current level differences were demonstrated by comparing device operation under light and dark conditions while a factor up to 105 is observed at vacuum versus atmospheric pressure environments.
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Affiliation(s)
- Carlos Marquez
- Nanoelectronics Research Group (CITIC-UGR), Department of Electronics, University of Granada, 18071 Granada, Spain; (J.C.G.); (C.N.); (C.S.); (F.G.)
- Correspondence: (C.M.); (N.S.)
| | - Norberto Salazar
- Nanoelectronics Research Group (CITIC-UGR), Department of Electronics, University of Granada, 18071 Granada, Spain; (J.C.G.); (C.N.); (C.S.); (F.G.)
- Correspondence: (C.M.); (N.S.)
| | - Farzan Gity
- Nanoelectronic Materials and Devices Group, Tyndall National Institute, University College Cork, T12 R5CP Cork, Ireland; (F.G.); (P.K.H.)
| | - Jose C. Galdon
- Nanoelectronics Research Group (CITIC-UGR), Department of Electronics, University of Granada, 18071 Granada, Spain; (J.C.G.); (C.N.); (C.S.); (F.G.)
| | - Carlos Navarro
- Nanoelectronics Research Group (CITIC-UGR), Department of Electronics, University of Granada, 18071 Granada, Spain; (J.C.G.); (C.N.); (C.S.); (F.G.)
| | - Carlos Sampedro
- Nanoelectronics Research Group (CITIC-UGR), Department of Electronics, University of Granada, 18071 Granada, Spain; (J.C.G.); (C.N.); (C.S.); (F.G.)
| | - Paul K. Hurley
- Nanoelectronic Materials and Devices Group, Tyndall National Institute, University College Cork, T12 R5CP Cork, Ireland; (F.G.); (P.K.H.)
| | - Edward Yi Chang
- International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan;
| | - Francisco Gamiz
- Nanoelectronics Research Group (CITIC-UGR), Department of Electronics, University of Granada, 18071 Granada, Spain; (J.C.G.); (C.N.); (C.S.); (F.G.)
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Marquez C, Rodriguez N, Ruiz R, Gamiz F. Electrical characterization and conductivity optimization of laser reduced graphene oxide on insulator using point-contact methods. RSC Adv 2016. [DOI: 10.1039/c6ra03630a] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
The present work is focused on the electrical characterization of laser-assisted reduced graphene oxide by point-contact techniques and the optimization of its electrical conductivity.
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Affiliation(s)
- Carlos Marquez
- Nanoelectronics Laboratory
- Department of Electronics
- CITIC-University of Granada
- Granada
- Spain
| | - Noel Rodriguez
- Nanoelectronics Laboratory
- Department of Electronics
- CITIC-University of Granada
- Granada
- Spain
| | - Rafael Ruiz
- Nanoelectronics Laboratory
- Department of Electronics
- CITIC-University of Granada
- Granada
- Spain
| | - Francisco Gamiz
- Nanoelectronics Laboratory
- Department of Electronics
- CITIC-University of Granada
- Granada
- Spain
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