A comparative study of efficiency droop and internal electric field for InGaN blue lighting-emitting diodes on silicon and sapphire substrates

We investigated the efficiency droop and polarization-induced internal electric field of InGaN blue light-emitting diodes (LEDs) grown on silicon(111) and c-plane sapphire substrates. The efficiency droop of the LED sample grown on silicon substrates was considerably lower than that of the identically fabricated LED sample grown on sapphire substrates. Consequently, the LED on silicon showed higher efficiency at a sufficiently high injection current despite the lower peak efficiency caused by the poorer crystal quality. The reduced efficiency droop for the LED on silicon was attributed to its lower internal electric field, which was confirmed by reverse-bias electro-reflectance measurements and numerical simulations. The internal electric field of the multiple quantum wells (MQWs) on silicon was found to be reduced by more than 40% compared to that of the MQWs on sapphire, which resulted in a more homogenous carrier distribution in InGaN MQWs, lower Auger recombination rates, and consequently reduced efficiency droop for the LEDs grown on the silicon substrates. Owing to its greatly reduced efficiency droop, the InGaN blue LED on silicon substrates is expected to be a good cost effective solution for future lighting technology.

A Study of Piezoelectric Field Related Strain Difference in GaN-Based Blue Light-Emitting Diodes Grown on Silicon(111) and Sapphire Substrates

We investigate the strain difference in InGaN/GaN multiple quantum wells of blue light-emitting diode (LED) structures grown on silicon(1 11) and c-plane sapphire substrates by comparing the strength of piezo-electric fields in MQWs. The piezo-electric fields for two LED samples grown on silicon and sapphire substrates are measured by using the reverse-bias electro-reflectance (ER) spectroscopy. The flat-band voltage is obtained by measuring the applied reverse bias voltage that induces a phase inversion in the ER spectra, which is used to calculate the strength of piezo-electric fields. The piezo-electric field is determined to be 1.36 MV/cm for the LED on silicon substrate and 1.83 MV/cm for the LED on sapphire substrate. The ER measurement results indicate that the strain-induced piezo-electric field is greatly reduced in the LED grown on silicon substrates consistent with previous strain measurement results by micro-Raman spectroscopy and high-resolution transmission electron microscopy.

Comparison of Strain in GaN-Based Blue Light-Emitting Diode Grown on Silicon(111) and Sapphire Substrates

We compare the strain states and device performances of GaN-based blue light-emitting diodes (LEDs) grown on Si(111) and sapphire substrates. The strain characteristics are investigated using micro-Raman spectroscopy and high-resolution transmission electron microscopy. These analyses reveal that GaN layer grown on Si has a residual tensile strain in contrast to a compressive strain for GaN on sapphire, and quantum wells (QWs) on GaN/Si experience reduced lattice mismatch than those of GaN/sapphire. When external quantum efficiencies of LED on sapphire and Si substrates are compared, the LED on Si shows better efficiency droop characteristics and this is attributed to a decrease in piezo-electric field strength in InGaN/GaN layers owing to reduced lattice mismatch.

Enhancement of spontaneous emission from the resonant modes of a photonic crystal slab single-defect cavity

Modification of the spontaneous-emission lifetime in photonic crystal single-defect resonant modes is studied with the finite-difference time domain method. We investigate spontaneous-emission enhancement from the monopole and the dipole modes of a hexagonal lattice cavity, considering the effects of the finite emitter linewidth and spectral detuning. Large spontaneous-emission enhancement of > 50 is achieved numerically from the high-quality-factor monopole mode when the emitter linewidth is comparable with the resonant-mode linewidth. However, if broad-linewidth material is used and a detuning effect is included, the dipole mode with a low quality factor and a smaller mode volume could be more advantageous for spontaneous-emission enhancement.

Aromatic hydrocarbon receptor-driven Bax gene expression is required for premature ovarian failure caused by biohazardous environmental chemicals

Polycyclic aromatic hydrocarbons (PAHs) are toxic chemicals released into the environment by fossil fuel combustion. Moreover, a primary route of human exposure to PAHs is tobacco smoke. Oocyte destruction and ovarian failure occur in PAH-treated mice, and cigarette smoking causes early menopause in women. In many cells, PAHs activate the aromatic hydrocarbon receptor (Ahr), a member of the Per-Arnt-Sim family of transcription factors. The Ahr is also activated by dioxin, one of the most intensively studied environmental contaminants. Here we show that an exposure of mice to PAHs induces the expression of Bax in oocytes, followed by apoptosis. Ovarian damage caused by PAHs is prevented by Ahr or Bax inactivation. Oocytes microinjected with a Bax promoter-reporter construct show Ahr-dependent transcriptional activation after PAH, but not dioxin, treatment, consistent with findings that dioxin is not cytotoxic to oocytes. This difference in the action of PAHs versus dioxin is conveyed by a single base pair flanking each Ahr response element in the Bax promoter. Oocytes in human ovarian biopsies grafted into immunodeficient mice also accumulate Bax and undergo apoptosis after PAH exposure in vivo. Thus, Ahr-driven Bax transcription is a novel and evolutionarily conserved cell-death signaling pathway responsible for environmental toxicant-induced ovarian failure.

A novel technique for the effective production of short peptide analogs from concatameric short peptide multimers

We designed a basic unit of the modified chicken gonadotropin releasing hormone II (cGnRH-II) peptide containing a trypsin cleavable linker peptide at both ends of the original peptide. We made a synthetic DNA coding for the modified cGnRH-II peptide with asymmetric and complementary cohesive ends of linker nucleotides. A tandemly repeated DNA cassette for the expression of concatameric short peptide multimers was constructed by ligating the basic units. The expressed peptide multimers were purified and subject to amino-terminal sequence analysis, which displayed the amino acid sequences expected from the designed nucleotides of the expression cassette. The monomeric cGnRH-II peptide analogs were generated after trypsin digestion. The present results showed that the technique developed for the production of the concatameric peptide multimers with cleavable linker peptides can be generally applicable to the production of short peptide analogs.