Influence of temperature on bandgap shifts, optical properties and photovoltaic parameters of GaAs/AlAs and GaAs/AlSbp-nheterojunctions: insights fromab-initioDFT + NEGF studies

The III-V group semiconductors are highly promising absorbers for heterojunctions based solar cell devices due to their high conversion efficiency. In this work, we explore the solar cell properties and the role of electron-phonon coupling (EPC) on the solar cell parameters of GaAs/AlSb and GaAs/AlAsp-nheterojunctions using non-equilibrium Green function method (NEGF) in combination ofab-initiodensity functional theory (DFT). In addition, the band offsets at the heterointerfaces, optical absorption and bandgap shifts (BGSs) due to temperature are estimated using DFT + NEGF approach. The interface band gaps in heterostructures are found to be lower than bulk band gaps leading to a shift in optical absorption coefficient towards lower energy side that results in stronger photocurrent. The temperature dependent electronic BGS is significantly influenced by the phonon density and phonon energy via EPC. The phonon influenced BGS is found to change the optical absorption, photocurrent density and open-circuit voltage. In case of GaAs/AlSb junction, the interface phonons are found to have significantly higher energies as compared to the bulk phonons and thereby may have important implications for photovoltaic (PV) properties. Overall, the present study reveals the influence of EPC on the optical absorption and PV properties of GaAs/AlSb and GaAs/AlSbp-nheterojunctions. Furthermore, the study shows that the DFT + NEGF method can be successfully used to obtain the reasonable quantitative estimates of temperature dependent BGSs, optical absorption and PV properties ofp-nheterojunctions.

First-principle investigation of structural, electronic, and phase stabilities in chalcopyrite semiconductors: insights from Meta-GGA functionals

We undertake a comprehensive first-principles investigation into the factors influencing the optoelectronic efficiencies of PIQIIIR2VIchalcopyrite semiconductors. The structural attributes, electronic properties, and phase stabilities are explored using various meta-GGA exchange-correlation (XC) functionals within the density functional framework. In particular, we assess the relative performance of these XC functionals in obtaining estimates of various relevant parameters. The structural parameteruin chalcopyrite semiconductors is a noteworthy aspect, as it is intrinsically tied to the extent of orbital hybridization between distinct atoms and thereby strongly influences the electronic properties. In general, the application of widely used GGA-PBE XC functional to these chalcopyrites results in unreliable predictions of band gaps and 'u' parameter due to delocalization errors that in turn arise due to the inclusion ofdandfcore electrons. While hybrid functionals offer remarkable accuracy through state-of-the-art methods, their main drawback lies in their computational expense and resource demands. Our findings strongly suggest that in comparison to GGA-PBE, the meta-GGA XC functionals perform quite well and provide results that closely align with experimental values. In particular, ther2SCAN andrMGGAC XC functionals are preferable and superior for investigating chalcopyrites and other solid-state systems. This preference is rooted in their excellent performance and substantially reduced computational costs compared to hybrid functionals.

Ba14Si4Sb8Te32(Te3): hypervalent Te in a new structure type with low thermal conductivity

Heavier pnictogen (Sb, Bi) containing chalcogenides are well known for their complex structures and semiconducting properties for numerous applications, particularly thermoelectric materials. Here, we report the syntheses of single crystals and polycrystalline phases of a new complex quaternary polytelluride, Ba14Si4Sb8Te32(Te3), via a high-temperature reaction of elements. A single-crystal X-ray diffraction study showed that it crystallizes in an unprecedented structure type with monoclinic symmetry (space group: P21/c). The crystal structure of Ba14Si4Sb8Te32(Te3) consists of one-dimensional ∞1[Si4Sb8Te32(Te3)]28- stripes, which are separated by the Ba2+ cations. Its complex structure features linear polytelluride units of Te34- having intermediate Te⋯Te interactions. A polycrystalline Ba14Si4Sb8Te32(Te3) sample shows a direct narrow bandgap of 0.8(2) eV, which indicates its semiconducting nature. The electrical resistivity of a sintered pellet of the polycrystalline sample exponentially decreases from ∼39.3 Ωcm to ∼0.57 Ωcm on heating it from 323 K to 773 K, confirming the sample's semiconducting nature. The sign of Seebeck coefficient values is positive in the 323 K to 773 K range confirming the p-type nature of the sintered sample. Interestingly, the sample attains an extremely low thermal conductivity of ∼0.32 Wm-1K-1 at 773 K, which could be attributed to the lattice anharmonicity caused by the lone pair effect of Sb3+ species in its complex pseudo-one-dimensional crystal structure. The electronic band structure of the title phase and the strength of chemical bonding of pertinent atomic pairs have been evaluated theoretically using the DFT method.

Ba4FeAgS6: a new antiferromagnetic and semiconducting quaternary sulfide

The single crystals of a quaternary sulfide, Ba₄FeAgS₆, have been synthesized by reacting elements at 873 K inside a sealed fused silica tube. The title phase is the first ordered quaternary compound of the Ba-Ag-Fe-S system. The crystal structure of Ba₄FeAgS₆ is characterized by a single-crystal X-ray diffraction study at 298(2) K. It crystallizes in the space group C52h - P2₁/n of the monoclinic crystal system with unit cell dimensions of a = 8.6367(5) Å, b = 12.0291(7) Å, c = 13.2510(7) Å, and β = 109.015(2)°. This compound is stoichiometric, and its structure contains twelve unique crystallographic sites: four Ba, one Fe, one Ag, and six S sites. All atoms of the structure occupy the general positions. The Ba₄FeAgS₆ structure consists of one-dimensional chains of 1∞[FeAgS₆]^8- that are extended in the [100] direction. The negative charges on these chains are counterbalanced by the filling of Ba²⁺ cations in between the 1∞[FeAgS₆]^8- chains. The Fe atoms are bonded to four S atoms that form a distorted tetrahedral geometry around the central Fe atom. Each Ag atom in this structure is coordinated with four S atoms in a distorted tetrahedral fashion. These FeS₄ and AgS₄ motifs are the main building blocks of the Ba₄FeAgS₆ structure. The corner-sharing of FeS₄ and AgS₄ tetrahedra creates one-dimensional chains of 1∞[FeAgS₆]^8-. This structure does not contain any homoatomic or metallic bonds and can be charge-balanced as (Ba²⁺)₄(Fe³⁺)₁(Ag¹⁺)₁(S^2-)₆. The optical absorption study performed on a polycrystalline Ba₄FeAgS₆ sample reveals a direct bandgap of 1.2(1) eV. The magnetic studies reveal the antiferromagnetic behavior of Ba₄FeAgS₆ below 50 K. The thermal conductivity and theoretical electronic structure of Ba₄FeAgS₆ are also studied in detail.

Electron-phonon interaction effect on the photovoltaic parameters of indirect (direct) bandgap AlSb (GaSb) p-n junction solar cell devices: a density functional theoretical study

Semiconductors AlSb and GaSb have emerged, in recent years, as important candidates for photovoltaic applications due to their strong absorption coefficients and other photovoltaic properties. In this study, AlSb (GaSb) p-n junction-based solar cell device parameters and properties are studied using the density functional theoretical framework and the non-equilibrium Green function approach. The effect of temperature on various solar cell parameters such as open-circuit voltage, power conversion efficiency, photocurrent density, short-circuit current, etc. is investigated using a special-thermal-displacement approach along with the GGA-1/2 exchange-correlation functional. As temperature increases, the phonons are found to significantly influence the charge carrier transport in the solar cells. The computed power conversion efficiencies for AlSb are estimated as 12.31% and 10.21% at 0 K and 400 K, respectively. The obtained results strongly indicate that the electron-phonon coupling and resulting phonon-assisted photon absorption are necessary for accurate description and prediction of solar cell properties. The estimates obtained in this study may serve as first-principles parameters with possible use in continuum model-based multiscale simulations of AlSb (GaSb) p-n homo-junction solar cells.

Efficient and improved prediction of the band offsets at semiconductorheterojunctions from meta-GGA density functionals: a benchmark study

Accurate theoretical prediction of the band offsets at interfaces of semiconductor heterostructures can of-ten be quite challenging. Although density functional theory has been reasonably successful to carry outsuch calculations and efficient and accurate semilocal functionals are desirable to reduce the computational cost. In general, the semilocal functionals based on the generalized gradient approximation (GGA) significantly underestimate the bulk band gaps. This, in turn, results in inaccurate estimates of the band offsets at the heterointerfaces. In this paper, we investigate the performance of several advanced meta-GGA functionals in the computational prediction of band offsets at semiconductor heterojunctions. In particular, we investigate the performance of r 2 SCAN (revised strongly-constrained and appropriately-normed functional), rMGGAC (revised semilocal functional based on cuspless hydrogen model and Pauli kinetic energy density functional), mTASK (modified Aschebrock and Kümmel meta-GGA functional), and LMBJ (local modified Becke-Johnson) exchange-correlation functionals. Our results strongly suggest that these meta-GGA functionals for supercell calculations perform quite well, especially, when compared to computationally more demanding GW calculations. We also present band offsets calculated using ionization potentials and electron affinities, as well as band alignment via the branch point energies. Overall, our study shows that the aforementioned meta-GGA functionals can be used within the DFT framework to estimate the band offsets in semiconductor heterostructures with predictive accuracy.

Syntheses and characterization of two new layered ternary chalcogenides NaScQ2 (Q = Se and Te)

Two new metal ternary chalcogenides, NaScSe2 and NaScTe2, have been synthesized via high-temperature reaction.

Five coordinated Mn in Ba4Mn2Si2Te9: synthesis, crystal structure, physical properties, and electronic structure

A new structure type Ba4Mn2Si2Te9 containing unique MnTe5 units is synthesized. The structure comprises two independent Mn atoms, each with 50% occupancy. It is a narrow bandgap semiconductor (Eg = 0.6(1) eV) consistent with the DFT studies.

Germanium Antimony Bonding in Ba4Ge2Sb2Te10 with Low Thermal Conductivity

A new quaternary telluride, Ba₄Ge₂Sb₂Te₁₀, was synthesized at high temperature via the reaction of elements. A single-crystal X-ray diffraction study shows that the title compound crystallizes in its own structure type in the monoclinic P2₁/c space group having cell dimensions of a = 13.984(3) Å, b = 13.472(3) Å, c = 13.569(3) Å, and β = 90.16(3)° with four formula units per unit cell (Z = 4). The pseudo-one-dimensional crystal structure of Ba₄Ge₂Sb₂Te₁₀ consists of infinite ₁^∞[Ge₂Sb₂Te₁₀]^8- stripes, which are separated by Ba²⁺ cations. Each of the Ge(1) atoms is covalently bonded to four Te atoms, whereas the Ge(2) atom is covalently bonded with one Sb(2) and three Te atoms in a distorted tetrahedral geometry. The title compound is the first example of a chalcogenide that shows Ge-Sb bonding. The Sb(1) atom is present at the center of the seesaw geometry of four Te atoms. In contrast, the Sb(2) atom forms a seesaw geometry by coordinating with one Ge(2) and three Te atoms. Condensation of these Ge and Sb centered polyhedral units lead to the formation of ₁^∞[Ge₂Sb₂Te₁₀]^8- stripes. The temperature-dependent resistivity study suggests the semimetallic/degenerate semiconducting nature of polycrystalline Ba₄Ge₂Sb₂Te₁₀. The positive sign of Seebeck coefficient values indicates that the predominant charge carriers are holes in Ba₄Ge₂Sb₂Te₁₀. An extremely low lattice thermal conductivity of ∼0.34 W/mK at 773 K was observed for polycrystalline Ba₄Ge₂Sb₂Te₁₀, which is presumably due to the lattice anharmonicity induced by the stereochemically active 5s² lone pair of Sb. The electronic structure of Ba₄Ge₂Sb₂Te₁₀ and the bonding of atom pairs in the structure have been analyzed by means of ELF analysis and crystal orbital Hamilton population (COHP) analysis.

Improved electronic structure prediction of chalcopyrite semiconductors from a semilocal density functional based on Pauli kinetic energy enhancement factor

The correct treatment ofdelectrons is of prime importance in order to predict the electronic properties of the prototype chalcopyrite semiconductors. The effect ofdstates is linked with the anion displacement parameteru, which in turn influences the bandgap of these systems. Semilocal exchange-correlation functionals which yield good structural properties of semiconductors and insulators often fail to predict reasonableubecause of the underestimation of the bandgaps arising from the strong interplay betweendelectrons. In the present study, we show that the meta-generalized gradient approximation (meta-GGA) obtained from the cuspless hydrogen density (MGGAC) (2019Phys. Rev.B 100 155140) performs in an improved manner in apprehending the key features of the electronic properties of chalcopyrites, and its bandgaps are comparative to that obtained using state-of-art hybrid methods. Moreover, the present assessment also shows the importance of the Pauli kinetic energy enhancement factor,α= (τ-τ^W)/τ^unifin describing thedelectrons in chalcopyrites. The present study strongly suggests that the MGGAC functional within semilocal approximations can be a better and preferred choice to study the chalcopyrites and other solid-state systems due to its superior performance and significantly low computational cost.

Theoretical investigation of lattice dynamics, infrared reflectivity, polarized Raman spectra and nature of interlayer coupling in two-dimensional layered gallium sulfide

Gallium sulfide (GaS) is a highly promising two-dimensional layered semiconductor owing to its remarkable thickness dependent electronic and physical properties. In this article, we perform a comprehensiveab initiostudy of lattice dynamics, mode symmetry assignments, polarized Raman and infrared (IR) reflectivity spectra of GaS system. Polarized Raman spectra are obtained for different light polarization set-ups of incoming and scattered light. The frequencies of all allowed vibrational modes at the zone-centre are calculated and symmetry labels are assigned. Furthermore, the variation of frequencies & intensities of Raman/IR active modes of ultrathin GaS films (few layers) as function of film thickness is studied. In addition, we also explore the nature of weak interlayer coupling in GaS. The weak forces between the GaS layers are usually assumed to be due to interlayer van der Waals (vdW) interaction. However, this assumption has not been reasonably explained in reported experimental studies. Our study strongly suggests that weak interlayer interactions in GaS may be primarily electrostatic (Coulomb) in nature and therefore the contribution of vdW interactions to layer-layer coupling and lattice dynamics may be significantly lower than that of electrostatic interaction. The suggested nature of interlayer coupling in GaS and related III-VI semiconductors may have important implications in determination of their various physical properties.

Ba2Ln1-xMn2Te5 (Ln = Pr, Gd, and Yb; x = Ln vacancy): syntheses, crystal structures, optical, resistivity, and electronic structure

Three new isostructural quaternary tellurides, Ba₂Ln_1-xMn₂Te₅ (Ln = Pr, Gd, and Yb), have been synthesized by the molten-flux method at 1273 K. The single-crystal X-ray diffraction studies at 298(2) K showed that Ba₂Ln_1-xMn₂Te₅ crystallize in the space group -C2/m of the monoclinic crystal system. There are six unique crystallographic sites in this structure's asymmetric unit: one Ba site, one Ln site, one Mn site, and three Te sites. The Ln site in the Ba₂Ln_1-xMn₂Te₅ structure is partially filled, which leaves about one-third of the Ln sites vacant (□) for Pr and Gd compounds. These structures do not contain any homoatomic or metallic bonding and can be charge-balanced as (Ba²⁺)₂(Gd/Pr³⁺)_2/3(Mn²⁺)₂(Te^2-)₅. The refined composition for the Yb compound is Ba₂Yb_0.74(1)Mn₂Te₅ and can be charge-balanced with a mixed valence state of Yb²⁺/Yb³⁺. The crystal structures of Ba₂Ln_1-xMn₂Te₅ consist of complex layers of [Ln_1-xMn₂Te₅]^4- stacked along the [100] direction, with Ba²⁺ cations separating these layers. The Ln atoms are bound to six Te atoms that form a distorted octahedral geometry around the central Ln atom. Each Mn atom in this structure is coordinated to four Te atoms in a distorted tetrahedral fashion. These LnTe₆ and MnTe₄ units are the main building blocks of the Ba₂Ln_1-xMn₂Te₅ structure. The optical absorption study performed on a polycrystalline Ba₂Gd_2/3Mn₂Te₅ sample reveals a direct bandgap of 1.06(2) eV consistent with the DFT study. A semiconducting behavior was also observed for polycrystalline Ba₂Gd_2/3Mn₂Te₅ from the resistivity study. The temperature-dependent magnetic studies on a polycrystalline sample of Ba₂Gd_2/3Mn₂Te₅ did not reveal any long-range magnetic order down to 5 K. The effective magnetic moment (μ_eff) of 10.37μ_B calculated using the Curie-Weiss law is in good agreement with the theoretical value (μ_cal) of 10.58μ_B.

Syntheses of five new layered quaternary chalcogenides SrScCuSe3, SrScCuTe3, BaScCuSe3, BaScCuTe3, and BaScAgTe3: crystal structures, thermoelectric properties, and electronic structures

Five new layered transition metal-based chalcogenides (SrScCuSe3, SrScCuTe3, BaScCuSe3, BaScCuTe3, and BaScAgTe3) were discovered by the exploratory solid-state method.

Reactive molten-flux assisted syntheses of single crystals of Cs19Ln19Mn10Te48 (Ln = Pr and Gd) crystallizing in a new structure type

Two new complex layered quaternary tellurides, Cs19Ln19Mn10Te48 (Ln = Pr and Gd), were synthesized by the reactive molten flux method. The title compounds represent an unprecedented structure type.

Suppression of octahedral tilts and associated changes in electronic properties at epitaxial oxide heterostructure interfaces

Epitaxial oxide interfaces with broken translational symmetry have emerged as a central paradigm behind the novel behaviors of oxide superlattices. Here, we use scanning transmission electron microscopy to demonstrate a direct, quantitative unit-cell-by-unit-cell mapping of lattice parameters and oxygen octahedral rotations across the BiFeO3-La0.7 Sr0.3 MnO3 interface to elucidate how the change of crystal symmetry is accommodated. Combined with low-loss electron energy loss spectroscopy imaging, we demonstrate a mesoscopic antiferrodistortive phase transition near the interface in BiFeO3 and elucidate associated changes in electronic properties in a thin layer directly adjacent to the interface.

Prediction of a switchable two-dimensional electron gas at ferroelectric oxide interfaces

The demonstration of a quasi-two-dimensional electron gas (2DEG) in LaAlO3/SrTiO3 heterostructures has stimulated intense research activity in recent years. The 2DEG has unique properties that are promising for applications in all-oxide electronic devices. For such applications it is desirable to have the ability to control 2DEG properties by external stimulus. Here, based on first-principles calculations we predict that all-oxide heterostructures incorporating ferroelectric constituents, such as KNbO3/ATiO3 (A=Sr, Ba, Pb), allow creating a 2DEG switchable between two conduction states by ferroelectric polarization reversal. The effect occurs due to the screening charge at the interface that counteracts the depolarizing electric field and depends on polarization orientation. The proposed concept of ferroelectrically controlled interface conductivity offers the possibility to design novel electronic devices.

Magnetic tunnel junctions with ferroelectric barriers: prediction of four resistance States from first principles

Magnetic tunnel junctions (MTJs), composed of two ferromagnetic electrodes separated by a thin insulating barrier layer, are currently used in spintronic devices, such as magnetic sensors and magnetic random access memories. Recently, driven by demonstrations of ferroelectricity at the nanoscale, thin-film ferroelectric barriers were proposed to extend the functionality of MTJs. Due to the sensitivity of conductance to the magnetization alignment of the electrodes (tunneling magnetoresistance) and the polarization orientation in the ferroelectric barrier (tunneling electroresistance), these multiferroic tunnel junctions (MFTJs) may serve as four-state resistance devices. On the basis of first-principles calculations, we demonstrate four resistance states in SrRuO(3)/BaTiO(3)/SrRuO(3) MFTJs with asymmetric interfaces. We find that the resistance of such a MFTJ is significantly changed when the electric polarization of the barrier is reversed and/or when the magnetizations of the electrodes are switched from parallel to antiparallel. These results reveal the exciting prospects of MFTJs for application as multifunctional spintronic devices.