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Wasser F, Zähter Ş, Sokol M, Rivers M, Atzeni S, Condamine FP, Cristoforetti G, Fauvel G, Fischer N, Gizzi LA, Hannasch A, Hesse M, Laštovička T, Lutz P, Rubovič P, Schaumann G, Schott N, Singh RL, Theobald W, Weber S, Ditmire T, Forner T, Roth M. Full aperture backscatter diagnostics for characterization of laser plasma instabilities at the extreme light infrastructure (ELI) beamlines. Rev Sci Instrum 2023; 94:093503. [PMID: 37737696 DOI: 10.1063/5.0153874] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/12/2023] [Accepted: 09/04/2023] [Indexed: 09/23/2023]
Abstract
We report on the commissioning of a full aperture backscatter diagnostics station for the kilojoule, nanosecond high repetition rate L4n laser operating at a wavelength of 527 nm at the Extreme Light Infrastructure (ELI) - Beamlines, Dolni Brezany, Czech Republic. Light scattered back from laser-plasma interaction into the cone of the final focusing lens is captured and split into different channels to measure the signatures of laser plasma instabilities from stimulated Brillouin scattering, stimulated Raman scattering, and two plasmon decay with respect to back scattered energy, its spectrum, and its temporal profile. The performance was confirmed in a commissioning experiment with more than 800 shots at laser intensities ranging from 0.5 × 1013 to 1.1 × 1015 W cm-2. These diagnostics are permanently installed at ELI Beamlines, and can be used to understand the details of laser-plasma interactions in experiments with kJ and 527 nm light. The large number of shots that can be collected in an experimental campaign will allow us to study the details of the laser-plasma interaction with a high level of confidence.
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Affiliation(s)
- F Wasser
- Focused Energy GmbH, Im Tiefen See 45, 64293 Darmstadt, Germany
- IU Internationale Hochschule GmbH, Darmstädter Landstrasse 110, 60598 Frankfurt am Main, Germany
| | - Ş Zähter
- Focused Energy GmbH, Im Tiefen See 45, 64293 Darmstadt, Germany
| | - M Sokol
- Focused Energy GmbH, Im Tiefen See 45, 64293 Darmstadt, Germany
| | - M Rivers
- University of Texas, 110 Inner Campus Dr., Austin, Texas 78712, USA
| | - S Atzeni
- Focused Energy GmbH, Im Tiefen See 45, 64293 Darmstadt, Germany
| | - F P Condamine
- Extreme Light Infrastructure ERIC, ELI-Beamlines Facility, 25241 Dolní Břežany, Czech Republic
| | | | - G Fauvel
- Extreme Light Infrastructure ERIC, ELI-Beamlines Facility, 25241 Dolní Břežany, Czech Republic
| | - N Fischer
- Focused Energy GmbH, Im Tiefen See 45, 64293 Darmstadt, Germany
| | - L A Gizzi
- Intense Laser Irradiation Laboratory, INO-CNR, Pisa, Italy
| | - A Hannasch
- Focused Energy GmbH, Im Tiefen See 45, 64293 Darmstadt, Germany
| | - M Hesse
- Focused Energy GmbH, Im Tiefen See 45, 64293 Darmstadt, Germany
| | - T Laštovička
- Extreme Light Infrastructure ERIC, ELI-Beamlines Facility, 25241 Dolní Břežany, Czech Republic
| | - P Lutz
- Focused Energy GmbH, Im Tiefen See 45, 64293 Darmstadt, Germany
| | - P Rubovič
- Extreme Light Infrastructure ERIC, ELI-Beamlines Facility, 25241 Dolní Břežany, Czech Republic
| | - G Schaumann
- Focused Energy GmbH, Im Tiefen See 45, 64293 Darmstadt, Germany
| | - N Schott
- Focused Energy GmbH, Im Tiefen See 45, 64293 Darmstadt, Germany
- Technische Universität Darmstadt, Schlossgartenstrasse 9, 64289 Darmstadt, Germany
| | - R L Singh
- Extreme Light Infrastructure ERIC, ELI-Beamlines Facility, 25241 Dolní Břežany, Czech Republic
| | - W Theobald
- Focused Energy GmbH, Im Tiefen See 45, 64293 Darmstadt, Germany
| | - S Weber
- Extreme Light Infrastructure ERIC, ELI-Beamlines Facility, 25241 Dolní Břežany, Czech Republic
| | - T Ditmire
- University of Texas, 110 Inner Campus Dr., Austin, Texas 78712, USA
| | - T Forner
- Focused Energy GmbH, Im Tiefen See 45, 64293 Darmstadt, Germany
| | - M Roth
- Focused Energy GmbH, Im Tiefen See 45, 64293 Darmstadt, Germany
- Technische Universität Darmstadt, Schlossgartenstrasse 9, 64289 Darmstadt, Germany
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Hangleiter A, Im JS, Forner T, Härle V, Scholz F. Near-Bandgap Photoluminescence Decay Time in GaN Epitaxial Layers Grown on Sapphire. ACTA ACUST UNITED AC 2011. [DOI: 10.1557/proc-395-559] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
Abstract
ABSTRACTUsing picosecond time-resolved photoluminescence we have studied the decay time of excess carriers in GaN epitaxial layers over a wide range of temperatures from 4 K up to 400 K. At low temperature, a thermal dissociation of donor-bound excitons is observed. At higher temperatures up to room temperature, the luminescence decay at moderate excitation is governed by trapping of photogenerated electrons in ionized shallow donor levels. Using measured luminescence intensities to determine the quantum efficiency, we obtain the radiative lifetime of free excitons from low temperature up to room temperature. We use these data to determine the radiative recombination coefficient and the interband momentum matrix element.
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