Nematic Spin Correlations Pervading the Phase Diagram of FeSe_{1-x}S_{x}

We use resonant inelastic x-ray scattering (RIXS) at the Fe-L_{3} edge to study the spin excitations of uniaxial-strained and unstrained FeSe_{1-x}S_{x} (0≤x≤0.21) samples. The measurements on unstrained samples reveal dispersive spin excitations in all doping levels, which show only minor doping dependence in energy dispersion, lifetime, and intensity, indicating that high-energy spin excitations are only marginally affected by sulfur doping. RIXS measurements on uniaxial-strained samples reveal that the high-energy spin-excitation anisotropy observed previously in FeSe is also present in the doping range 0200  K in x=0.18 and reaches a maximum around the nematic quantum critical doping (x_{c}≈0.17). Since the spin-excitation anisotropy directly reflects the existence of nematic spin correlations, our results indicate that high-energy nematic spin correlations pervade the regime of nematicity in the phase diagram and are enhanced by the nematic quantum criticality. These results emphasize the essential role of spin fluctuations in driving electronic nematicity and highlight the capability of uniaxial strain in tuning spin excitations in quantum materials hosting strong magnetoelastic coupling and electronic nematicity.

Unravelling strong electronic interlayer and intralayer correlations in a transition metal dichalcogenide

Electronic correlations play important roles in driving exotic phenomena in condensed matter physics. They determine low-energy properties through high-energy bands well-beyond optics. Great effort has been made to understand low-energy excitations such as low-energy excitons in transition metal dichalcogenides (TMDCs), however their high-energy bands and interlayer correlation remain mysteries. Herewith, by measuring temperature- and polarization-dependent complex dielectric and loss functions of bulk molybdenum disulphide from near-infrared to soft X-ray, supported with theoretical calculations, we discover unconventional soft X-ray correlated-plasmons with low-loss, and electronic transitions that reduce dimensionality and increase correlations, accompanied with significantly modified low-energy excitons. At room temperature, interlayer electronic correlations, together with the intralayer correlations in the c-axis, are surprisingly strong, yielding a three-dimensional-like system. Upon cooling, wide-range spectral-weight transfer occurs across a few tens of eV and in-plane p-d hybridizations become enhanced, revealing strong Coulomb correlations and electronic anisotropy, yielding a two-dimensional-like system. Our result shows the importance of strong electronic, interlayer and intralayer correlations in determining electronic structure and opens up applications of utilizing TMDCs on plasmonic nanolithrography.

Nanoscale dielectric grating polarizers tuned to 4.43 eV for ultraviolet polarimetry

Transmissive dielectric wire grid polarizers tuned to 4.43 eV (Mg II line, 280 nm), an important diagnostic line for solar physics, are presented in this communication. The polarizers are based on TiO₂ gratings and designed with a period of ∼140 nm (7143 lines/mm), 40 nm line width (duty cycle of 0.286), and 100 nm line height. Several gratings are fabricated through electron beam lithography combined with reactive ion etching, whereby two parameters in the nanofabrication process are explored: e-beam dosage on the photoresist and TiO₂ etching time. Polarization of samples is optically characterized using a spectroscopic ellipsometer in transmission mode, achieving the best result with an extinction ratio of ∼109 and a transmittance of 16.4% at the target energy of 4.43 eV. The shape of the gratings is characterized through atomic force microscopy (AFM) and scanning electron microscopy (SEM); the measured AFM profiles are distorted by the tip geometry, hence a simple deconvolution procedure is implemented to retrieve the real profile. By analysing the AFM and SEM profiles, we find that the real shapes of the different gratings are close to the design, but with a larger duty cycle than the intended value. With the real grating geometry, an improved model of the best sample was built with a finite-difference time-domain (FDTD) method that matches the result obtained through optical characterization.

Large Enhancement of 2D Electron Gases Mobility Induced by Interfacial Localized Electron Screening Effect

The interactions between delocalized and localized charges play important roles in correlated electron systems. Here, using a combination of transport measurements, spectroscopic ellipsometry (SE), and X-ray absorption spectroscopy (XAS) supported by theoretical calculations, we reveal the important role of interfacial localized charges and their screening effects in determining the mobility of (La_0.3 Sr_0.7 )(Al_0.65 Ta_0.35 )O₃ /SrTiO₃ (LSAT/SrTiO₃ ) interfaces. When the LSAT layer thickness reaches the critical value of 5 uc, the insulating interface abruptly becomes conducting, accompanied by the appearance of a new midgap state. This midgap state emerges at ≈1 eV below the Ti t_2g band and shows a strong character of Ti 3d_xy - O 2p hybridization. Increasing the LSAT layer from 5 to 18 uc, the number of localized charges increases, resulting in an enhanced screening effect and higher mobile electron mobility. This observation contradicts the traditional semiconductor interface where the localized charges always suppress the carrier mobility. These results demonstrate a new strategy to probe localized charges and mobile electrons in correlated electronic systems and highlight the important role of screening effects from localized charges in improving the mobile electron mobility at complex oxide interfaces.

Self-consistent iteration procedure in analyzing reflectivity and spectroscopic ellipsometry data of multilayered materials and their interfaces

For multilayered materials, reflectivity depends on the complex dielectric function of all the constituent layers, and a detailed analysis is required to separate them. Furthermore, for some cases, new quantum states can occur at the interface which may change the optical properties of the material. In this paper, we discuss various aspects of such analysis, and present a self-consistent iteration procedure, a versatile method to extract and separate the complex dielectric function of each individual layer of a multilayered system. As a case study, we apply this method to LaAlO3/SrTiO3 heterostructure in which we are able to separate the effects of the interface from the LaAlO3 film and the SrTiO3 substrate. Our method can be applied to other complex multilayered systems with various numbers of layers.