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Song K, Du L, Yue G, Li T, Li H, Zheng S, Chen Z, Zheng H. Simultaneously elevating the resistive switching level and ambient-air-stability of 3D perovskite (TAZ-H)PbBr 3-based memory device by encapsulating into polyvinylpyrrolidone. J Colloid Interface Sci 2023; 642:408-420. [PMID: 37023513 DOI: 10.1016/j.jcis.2023.03.192] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/31/2023] [Revised: 03/19/2023] [Accepted: 03/29/2023] [Indexed: 04/08/2023]
Abstract
The study about simultaneously enhancing the resistive switching level and ambient-air-stability of perovskite-based memorizers will promote its commercialization. Here, a new 3D perovskite (TAZ-H)PbBr3 (TAZ-H+ = protonated thiazole) has been fabricated as FTO/(TAZ-H)PbBr3/Ag device, which only exhibits binary memory performance with the high tolerant temperature of 170 °C. After encapsulating by polyvinylpyrrolidone (PVP), the (TAZ-H)PbBr3@PVP composite-based device can demonstrate ternary resistive switching behavior with considerable ON2/ON1/OFF ratio (105.9: 103.9:1) and high ternary yield (68 %). Specially, this device presents good ambient-air stability at RH 80 % and thermal tolerance of 100 °C. The binary resistive switching mechanism can be ascribed to the halogen ion migration induced by bromine defects in the (PbBr3)nn- framework. But the ternary resistive switching phenomenon in the (TAZ-H)PbBr3@PVP-based device could be depicted as the carrier transport from filled traps of PVP to (PbBr3)nn- framework (ON1 state) and then carriers flowing in the re-arranged (TAZ-H)nn+ chain in 3D channels (ON2 state). The PVP treatment can not only modify the grain boundary defects, but also facilitate the transport of injected carriers to the perovskite films via Pb-O coordinated bonds and inhibition of order-disorder transformation. This facial strategy for implementing ternary perovskite-based memorizers with good ambient-air-stability is quite meaningful for high-density memory in harsh environments.
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Affiliation(s)
- Kaiyue Song
- Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Lingling Du
- Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Guoli Yue
- Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Tao Li
- Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Haohong Li
- Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China; Fujian Engineering Research Center of Advanced Manufacturing Technology for Fine Chemicals, College of Chemical Engineering, Fuzhou University, Fuzhou, Fujian 350108, China.
| | - Shoutian Zheng
- Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Zhirong Chen
- Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Huidong Zheng
- Qingyuan Innovation Laboratory, Quanzhou, Fujian 362801, China; Fujian Engineering Research Center of Advanced Manufacturing Technology for Fine Chemicals, College of Chemical Engineering, Fuzhou University, Fuzhou, Fujian 350108, China.
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Abstract
The traditional three-dimensional (3D) halide perovskites (HPs) have experienced rapid development due to their highly power conversion efficiency (PCE). However, the instability of 3D perovskite on humidity and UV irradiation blocks their commercialization. In the past few years, two-dimensional (2D) halide perovskites attract much attention because they behave better stability due to the water resistance of the aliphatic carbon chains in the 2D perovskite lattice. In this review, we categorize the 2D/3D perovskites based on the applications [i.e., solar cells (SCs), light-emitting diodes (LEDs) and photodetectors (PDs)]. We further discuss the recent efforts in the performance enhancement of the 2D/3D perovskite-based devices. However, there are still some difficulties before 2D/3D HPs is fully commercialized. We will provide some scientific and technical challenges and prospects in the article to point out the future direction.
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Affiliation(s)
| | - Hai Zhou
- Hubei Yangtze Memory Labs, School of Microelectronics and Faculty of Physics and Electronic Science, Hubei University, Wuhan, China
| | - Hao Wang
- Hubei Yangtze Memory Labs, School of Microelectronics and Faculty of Physics and Electronic Science, Hubei University, Wuhan, China
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