Effect and Regulation Mechanism of Post-deposition Annealing on the Ferroelectric Properties of AlScN Thin Films

Integrating ferroelectric AlScN with III-N semiconductors to enhance the performance and tunability of nitride devices requires high-quality AlScN films. This work focuses on the effect and regulation mechanism of post-annealing in pure N2 on the crystal quality and ferroelectric properties of AlScN films. It is found that the crystal quality improves with increasing annealing temperatures. Remarkably, the leakage current of AlScN films caused by grain boundaries could be reduced by four orders of magnitude after annealing at 400 °C. The crystal growth dynamics simulations and band structure calculations indicate that the energy supplied by the temperature facilitates the evolution of abnormally oriented grains to have a better c-axis orientation, resulting in the defect states at the Fermi-level disappearing, which is mainly the reason for the leakage current decrease. More interestingly, the reduction of leakage current leads to the previously leaking region exhibiting ferroelectric properties, which is of great significance to improve the ferroelectricity of AlScN and ensure the uniformity of devices. Furthermore, annealing enhances the tensile strain on the film, which flattens the energy landscape of ferroelectric switching and reduces the coercive field. However, the risk of incorporation of oxygen will also be increased if the annealing temperatures are higher than 400 °C, which will not only reduce the relative displacement of metal atoms and nitrogen atoms in AlScN but also enhance the ferroelectric depolarization field, leading to the remnant polarization decreasing dramatically. These discoveries facilitate a deeper understanding of the influencing mechanism on the ferroelectric properties of AlScN films and provide a direction for obtaining high-quality AlScN.

AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors with Annealed TiO2 as Passivation and Dielectric Layers

This paper reports on improved AlGaN/GaN metal oxide semiconductor high-electron mobility transistors (MOS-HEMTs). TiO₂ is used to form the dielectric and passivation layers. The TiO₂ film is characterized using X-ray photoemission spectroscopy (XPS), Raman spectroscopy, and transmission electron microscopy (TEM). The quality of the gate oxide is improved by annealing at 300 °C in N₂. Experimental results indicate that the annealed MOS structure effectively reduces the gate leakage current. The high performance of the annealed MOS-HEMTs and their stable operation at elevated temperatures up to 450 K is demonstrated. Furthermore, annealing improves their output power characteristics.

Effect of Annealing Time on the Cyclic Characteristics of Ceramic Oxide Thin Film Thermocouples

Oxide thin film thermocouples (TFTCs) are widely used in high-temperature environment measurements and have the advantages of good stability and high thermoelectric voltage. However, different annealing processes affect the performance of TFTCs. This paper studied the impact of different annealing times on the cyclic characteristics of ceramic oxide thin film thermocouples. ITO/In₂O₃ TFTCs were prepared on alumina ceramics by a screen printing method, and the samples were annealed at different times. The microstructure of the ITO film was studied by scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The results show that when the annealing temperature is fixed, the stability of the thermocouple is worst when it is annealed for 2 h. Extending the annealing time can improve the properties of the film, increase the density, slow down oxidation, and enhance the thermal stability of the thermocouple. The thermal cycle test results show that the sample can reach five temperature rise and fall cycles, more than 50 h, and can meet the needs of stable measurement in high temperature and harsh environments.

An Efficient Method of Observing Diatom Frustules via Digital Holographic Microscopy

Herein, we propose a convenient method to enable pretreatment of target objects using digital holographic microscopy (DHM). As a test sample, we used diatom frustules (Nitzschia sp.) as the target objects. In the generally used sample preparation method, the frustule suspension is added dropwise onto a glass substrate or into a glass chamber. While our work confirms good observation of purified frustules using the typical sample preparation method, we also demonstrate a new procedure to observe unseparated structures of frustules prepared by baking them on a mica surface. The baked frustules on the mica surface were transferred to a glass chamber with 1% sodium dodecyl sulfate solution. In this manner, the unseparated structures of the diatom frustules were clearly observed. Furthermore, metal-coated frustules prepared by sputtering onto them on a mica surface were also clearly observed using the same procedure. Our method can be applied for the observation of any target object that is pretreated on a solid surface. We expect our proposed method to be a basis for establishing DHM techniques for microscopic observations of biomaterials.

Effect of Annealing on the Microstructure and SERS Performance of Mo-48.2% Ag Films

Mo-48.2% Ag films were fabricated by direct current (DC) magnetron sputtering and annealed in an argon atmosphere. The effects of annealing on the surface morphology, resistivity and surface-enhanced Raman scattering (SERS) performance of Mo-48.2% Ag films were investigated. Results show a mass of polyhedral Ag particles grown on the annealed Mo-48.2% Ag films' surface, which are different from that of as-deposited Mo-Ag film. Moreover, the thickness and the resistivity of Mo-48.2% Ag films gradually decrease as the annealing temperature increases. Furthermore, finite-difference time-domain (FDTD) simulations proved that the re-deposition Ag layer increases the "hot spots" between adjacent Ag nanoparticles, thereby greatly enhancing the local electromagnetic (EM) field. The Ag layer/annealed Mo-48.2% Ag films can identify crystal violet (CV) with concentration lower than 5 × 10-10 M (1 mol/L = 1 M), which indicated that this novel type of particles/films can be applied as ultrasensitive SERS substrates.

Enhanced Room Temperature NO2 Sensing Performance of RGO Nanosheets by Building RGO/SnO2 Nanocomposite System

RGO/SnO2 nanocomposites were prepared by a simple blending method and then airbrushed on interdigitated electrodes to obtain the corresponding gas sensors. The characterizations of SEM, TEM, Raman, XRD and FTIR were used to characterize the microstructures, morphologies and surface chemical compositions of the nanocomposites, indicating that the two materials coexist in the composite films and the concentration of surface defects is affected by the amount of SnO2 nanoparticles. It is also found that the room temperature sensing performance of RGO to NO2 can be improved by introducing appropriate amount of SnO2 nanoparticles. The enhanced NO2 sensing properties are attributed to the rough surface structure and increased surface area and surface defects of the nanocomposite films. Since further reduction of RGO, heat treating the sensing films resulted in a decrease in the response and recovery times of the sensors. Furthermore, the sensor annealed at 200 ∘C exhibited a small baseline drift, wide detection range, good linearity, high stability and better selectivity.

Critical Annealing Temperature for Stacking Orientation of Bilayer Graphene

It is rarely reported that stacking orientations of bilayer graphene (BLG) can be manipulated by the annealing process. Most investigators have painstakingly fabricated this BLG by chemical vapor deposition growth or mechanical means. Here, it is discovered that, at ≈600 °C, called the critical annealing temperature (CAT), most stacking orientations collapse into strongly coupled or AB-stacked states. This phenomenon is governed (i) macroscopically by the stress generation and release in top graphene domains, evolving from mild ripples to sharp billows in certain local areas, and (ii) microscopically by the principle of minimal potential obeyed by carbon atoms that have acquired sufficient thermal energy at CAT. Conspicuously, evolutions of stacking orientations in Raman mappings under various annealing temperatures are observed. Furthermore, MoS₂ synthesized on BLG is used to directly observe crystal orientations of top and bottom graphene layers. The finding of CAT provides a guide for the fabrication of strongly coupled or AB-stacked BLG, and can be applied to aligning other 2D heterostructures.

Cyclical Annealing Technique To Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors

This study introduces a cyclical annealing technique that enhances the reliability of amorphous indium-gallium-zinc-oxide (a-IGZO) via-type structure thin film transistors (TFTs). By utilizing this treatment, negative gate-bias illumination stress (NBIS)-induced instabilities can be effectively alleviated. The cyclical annealing provides several cooling steps, which are exothermic processes that can form stronger ionic bonds. An additional advantage is that the total annealing time is much shorter than when using conventional long-term annealing. With the use of cyclical annealing, the reliability of the a-IGZO can be effectively optimized, and the shorter process time can increase fabrication efficiency.

Effects of Annealing on the Residual Stress in γ-TiAl Alloy by Molecular Dynamics Simulation

In this paper, molecular dynamics simulations are performed to study the annealing process of γ-TiAl alloy with different parameters after introducing residual stress into prepressing. By mainly focusing on the dynamic evolution process of microdefects during annealing and the distribution of residual stress, the relationship between microstructure and residual stress is investigated. The results show that there is no phase transition during annealing, but atom distortion occurs with the change of temperature, and the average grain size slightly increases after annealing. There are some atom clusters in the grains, with a few point defects, and the point defect concentration increases with the rise in temperature, and vice versa; the higher the annealing temperature, the fewer the point defects in the grain after annealing. Due to the grain boundary volume shrinkage and and an increase in the plastic deformation of the grain boundaries during cooling, stress is released, and the average residual stress along Y and Z directions after annealing is less than the average residual stress after prepressing.