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Xie G, Wang J, Yin S, Liang A, Wang W, Chen Z, Feng C, Yu J, Liao X, Fu Y, Xue Q, Min Y, Lu X, Chen Y. Dual-Strategy Tailoring Molecular Structures of Dopant-Free Hole Transport Materials for Efficient and Stable Perovskite Solar Cells. Angew Chem Int Ed Engl 2024:e202403083. [PMID: 38502273 DOI: 10.1002/anie.202403083] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/13/2024] [Revised: 03/16/2024] [Accepted: 03/18/2024] [Indexed: 03/21/2024]
Abstract
Dopant-free hole transport materials (HTMs) are ideal materials for highly efficient and stable n-i-p perovskite solar cells (PSCs), but most current design strategies for tailoring the molecular structures of HTMs are limited to single strategy. Herein, four HTMs based on dithienothiophenepyrrole (DTTP) core are devised through dual-strategy methods combining conjugate engineering and side chain engineering. DTTP-ThSO with ester alkyl chain that can form six-membered ring by the S⋅⋅⋅O noncovalent conformation lock with thiophene in the backbone shows good planarity, high-quality film, matching energy level and high hole mobility, as well as strong defect passivation ability. Consequently, a remarkable power conversion efficiency (PCE) of 23.3 % with a nice long-term stability is achieved by dopant-free DTTP-ThSO-based PSCs, representing one of the highest values for un-doped organic HTMs based PSCs. Especially, the fill factor (FF) of 82.3 % is the highest value for dopant-free small molecular HTMs-based n-i-p PSCs to date. Moreover, DTTP-ThSO-based devices have achieved an excellent PCE of 20.9 % in large-area (1.01 cm2) devices. This work clearly elucidates the structure-performance relationships of HTMs and offers a practical dual-strategy approach to designing dopant-free HTMs for high-performance PSCs.
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Affiliation(s)
- Gang Xie
- Key Laboratory of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, Jiangxi Normal University, Nanchang, 330022, China
| | - Jing Wang
- School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, China
| | - Shungao Yin
- Key Laboratory of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, Jiangxi Normal University, Nanchang, 330022, China
| | - Aihui Liang
- Key Laboratory of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, Jiangxi Normal University, Nanchang, 330022, China
| | - Wei Wang
- Key Laboratory of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, Jiangxi Normal University, Nanchang, 330022, China
| | - Ziming Chen
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, School of Materials Science and Engineering, South China University of Technology, Guangzhou, 510640, China
| | - Chuizheng Feng
- Key Laboratory of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, Jiangxi Normal University, Nanchang, 330022, China
| | - Jianxin Yu
- Key Laboratory of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, Jiangxi Normal University, Nanchang, 330022, China
| | - Xunfan Liao
- Key Laboratory of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, Jiangxi Normal University, Nanchang, 330022, China
| | - Yuang Fu
- Department of Physics, Chinese University of Hong Kong, Hong Kong, 999077, China
| | - Qifan Xue
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, School of Materials Science and Engineering, South China University of Technology, Guangzhou, 510640, China
| | - Yonggang Min
- School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, China
| | - Xinhui Lu
- Department of Physics, Chinese University of Hong Kong, Hong Kong, 999077, China
| | - Yiwang Chen
- Key Laboratory of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, Jiangxi Normal University, Nanchang, 330022, China
- College of Chemistry and Chemical Engineering/Film Energy Chemistry for Jiangxi Provincial Key Laboratory (FEC), Nanchang University, 999 Xuefu Avenue, Nanchang, 330031, China
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Royo R, Sánchez JG, Li W, Martinez-Ferrero E, Palomares E, Andreu R, Franco S. Novel Spiro-Core Dopant-Free Hole Transporting Material for Planar Inverted Perovskite Solar Cells. Nanomaterials (Basel) 2023; 13:2042. [PMID: 37513053 PMCID: PMC10385314 DOI: 10.3390/nano13142042] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/15/2023] [Revised: 07/04/2023] [Accepted: 07/06/2023] [Indexed: 07/30/2023]
Abstract
Hole-transporting materials (HTMs) have demonstrated their crucial role in promoting charge extraction, interface recombination, and device stability in perovskite solar cells (PSCs). Herein, we present the synthesis of a novel dopant-free spiro-type fluorine core-based HTM with four ethoxytriisopropylsilane groups (Syl-SC) for inverted planar perovskite solar cells (iPSCs). The thickness of the Syl-SC influences the performance of iPSCs. The best-performing iPSC is achieved with a 0.8 mg/mL Syl-SC solution (ca. 15 nm thick) and exhibits a power conversion efficiency (PCE) of 15.77%, with Jsc = 20.00 mA/cm2, Voc = 1.006 V, and FF = 80.10%. As compared to devices based on PEDOT:PSS, the iPSCs based on Syl-SC exhibit a higher Voc, leading to a higher PCE. Additionally, it has been found that Syl-SC can more effectively suppress charge interfacial recombination in comparison to PEDOT:PSS, which results in an improvement in fill factor. Therefore, Syl-SC, a facilely processed and efficient hole-transporting material, presents a promising cost-effective alternative for inverted perovskite solar cells.
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Affiliation(s)
- Raquel Royo
- Instituto de Nanociencia y Materiales de Aragón (INMA), Departamento de Química Orgánica, CSIC-Universidad de Zaragoza, 50009 Zaragoza, Spain
| | - José G Sánchez
- Institute of Chemical Research of Catalonia, The Barcelona Institute of Science and Technology (ICIQ-BIST), Avinguda Països Catalans 16, 43007 Tarragona, Spain
| | - Wenhui Li
- Institute of Chemical Research of Catalonia, The Barcelona Institute of Science and Technology (ICIQ-BIST), Avinguda Països Catalans 16, 43007 Tarragona, Spain
| | - Eugenia Martinez-Ferrero
- Institute of Chemical Research of Catalonia, The Barcelona Institute of Science and Technology (ICIQ-BIST), Avinguda Països Catalans 16, 43007 Tarragona, Spain
| | - Emilio Palomares
- Institute of Chemical Research of Catalonia, The Barcelona Institute of Science and Technology (ICIQ-BIST), Avinguda Països Catalans 16, 43007 Tarragona, Spain
- Catalan Institution for Research and Advanced Studies (ICREA), Passeig Lluïs Companys, 23, 08010 Barcelona, Spain
| | - Raquel Andreu
- Instituto de Nanociencia y Materiales de Aragón (INMA), Departamento de Química Orgánica, CSIC-Universidad de Zaragoza, 50009 Zaragoza, Spain
| | - Santiago Franco
- Instituto de Nanociencia y Materiales de Aragón (INMA), Departamento de Química Orgánica, CSIC-Universidad de Zaragoza, 50009 Zaragoza, Spain
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Fan D, Zhang R, Li Y, Shan C, Li W, Wang Y, Xu F, Fan H, Sun Z, Li X, Zhao M, Kyaw AKK, Li G, Wang J, Huang W. Dopant-Free Hole Transporting Material Based on Nonconjugated Adamantane for High-Performance Perovskite Solar Cells. Front Chem 2021; 9:746365. [PMID: 34760869 PMCID: PMC8573366 DOI: 10.3389/fchem.2021.746365] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/23/2021] [Accepted: 08/19/2021] [Indexed: 11/23/2022] Open
Abstract
A new dopant-free hole transporting material (HTM) 4′,4‴,4‴'',4‴''''-(adamantane-1,3,5,7-tetrayl)tetrakis(N,N-bis(4-methoxyphenyl)-[1,1′-biphenyl]-4-amine) (Ad-Ph-OMeTAD) (named FDY for short), which consists of a nonconjugated 3D bulky caged adamantane (Ad) as the core, triphenyl amines as side arms, and phenyl units as a linking bridge, is synthesized and applied in an inverted planar perovskite solar cell (PSC). As a result, the champion device with FDY as HTM yields an impressive power of conversion efficiency (PCE) of 18.69%, with JSC = 22.42 mA cm−2, VOC = 1.05 V, and FF = 79.31% under standard AM 1.5G illumination, which is ca. 20% higher than that of the device based on PEDOT:PSS (only 15.41%). Notably, the stability of PSC based on FDY is much better than that of devices based on PEDOT:PSS, and the corresponding devices retain over 90% of their initial PCEs after storing for 60 days in a nitrogen glove box without any encapsulation. Even when stored in an open air condition with 50–60% relative humidity for 188 h, the retained PCE is still over 81% of its initial one. All these results demonstrate that the new design strategy by combing the bulky and nonconjugated (aliphatic) adamantane unit as the core and triphenyl amines as side arms can efficiently develop highly efficient HTMs for PSCs, which is different from the traditional way based on conjugated backbones, and it may open a new way for scientists to design small-molecule HTMs for PSCs.
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Affiliation(s)
- Dongyu Fan
- Key Laboratory of Flexible Electronic (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China.,Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, and Department of Electrical & Electronic Engineering Southern University of Science and Technology, Shenzhen, China
| | - Ren Zhang
- Key Laboratory of Flexible Electronic (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Yuheng Li
- Key Laboratory of Flexible Electronic (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China.,Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, and Department of Electrical & Electronic Engineering Southern University of Science and Technology, Shenzhen, China
| | - Chengwei Shan
- Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, and Department of Electrical & Electronic Engineering Southern University of Science and Technology, Shenzhen, China
| | - Wenhui Li
- Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, and Department of Electrical & Electronic Engineering Southern University of Science and Technology, Shenzhen, China
| | - Yunhao Wang
- Key Laboratory of Flexible Electronic (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Feiyang Xu
- Key Laboratory of Flexible Electronic (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China.,Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, and Department of Electrical & Electronic Engineering Southern University of Science and Technology, Shenzhen, China
| | - Hua Fan
- Key Laboratory of Flexible Electronic (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Zonghao Sun
- Key Laboratory of Flexible Electronic (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Xuehui Li
- Key Laboratory of Flexible Electronic (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Mengshuai Zhao
- Key Laboratory of Flexible Electronic (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Aung Ko Ko Kyaw
- Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, and Department of Electrical & Electronic Engineering Southern University of Science and Technology, Shenzhen, China
| | - Gongqiang Li
- Key Laboratory of Flexible Electronic (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China.,Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, China
| | - Jianpu Wang
- Key Laboratory of Flexible Electronic (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Wei Huang
- Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), Xi'an, China
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