Effects of Cu, Zn Doping on the Structural, Electronic, and Optical Properties of α-Ga2O3: First-Principles Calculations

The intrinsic n-type conduction in Gallium oxides (Ga2O3) seriously hinders its potential optoelectronic applications. Pursuing p-type conductivity is of longstanding research interest for Ga2O3, where the Cu- and Zn-dopants serve as promising candidates in monoclinic β-Ga2O3. However, the theoretical band structure calculations of Cu- and Zn-doped in the allotrope α-Ga2O3 phase are rare, which is of focus in the present study based on first-principles density functional theory calculations with the Perdew-Burke-Ernzerhof functional under the generalized gradient approximation. Our results unfold the predominant Cu1+ and Zn2+ oxidation states as well as the type and locations of impurity bands that promote the p-type conductivity therein. Furthermore, the optical calculations of absorption coefficients demonstrate that foreign Cu and Zn dopants induce the migration of ultraviolet light to the visible-infrared region, which can be associated with the induced impurity 3d orbitals of Cu- and Zn-doped α-Ga2O3 near the Fermi level observed from electronic structure. Our work may provide theoretical guidance for designing p-type conductivity and innovative α-Ga2O3-based optoelectronic devices.

Accessing Structural, Electronic, Transport and Mesoscale Properties of Li-GICs via a Complete DFTB Model with Machine-Learned Repulsion Potential

Lithium-graphite intercalation compounds (Li-GICs) are the most popular anode material for modern lithium-ion batteries and have been subject to numerous studies—both experimental and theoretical. However, the system is still far from being consistently understood in detail across the full range of state of charge (SOC). The performance of approaches based on density functional theory (DFT) varies greatly depending on the choice of functional, and their computational cost is far too high for the large supercells necessary to study dilute and non-equilibrium configurations which are of paramount importance for understanding a complete charging cycle. On the other hand, cheap machine learning methods have made some progress in predicting, e.g., formation energetics, but fail to provide the full picture, including electrostatics and migration barriers. Following up on our previous work, we deliver on the promise of providing a complete and affordable simulation framework for Li-GICs. It is based on density functional tight binding (DFTB), which is fitted to dispersion-corrected DFT data using Gaussian process regression (GPR). In this work, we added the previously neglected lithium–lithium repulsion potential and extend the training set to include superdense Li-GICs (LiC_6−x; x>0) and lithium metal, allowing for the investigation of dendrite formation, next-generation modified GIC anodes, and non-equilibrium states during fast charging processes in the future. For an extended range of structural and energetic properties—layer spacing, bond lengths, formation energies and migration barriers—our method compares favorably with experimental results and with state-of-the-art dispersion-corrected DFT at a fraction of the computational cost. We make use of this by investigating some larger-scale system properties—long range Li–Li interactions, dielectric constants and domain-formation—proving our method’s capability to bring to light new insights into the Li-GIC system and bridge the gap between DFT and meso-scale methods such as cluster expansions and kinetic Monte Carlo simulations.

Understanding Disorder in 2D Materials: The Case of Carbon Doping of Silicene

We investigate the effect of lattice disorder and local correlation effects in finite and periodic silicene structures caused by carbon doping using first-principles calculations. For both finite and periodic silicene structures, the electronic properties of carbon-doped monolayers are dramatically changed by controlling the doping sites in the structures, which is related to the amount of disorder introduced in the lattice and electron-electron correlation effects. By changing the position of the carbon dopants, we found that a Mott-Anderson transition is achieved. Moreover, the band gap is determined by the level of lattice disorder and electronic correlation effects. Finally, these structures are ferromagnetic even under disorder which has potential applications in Si-based nanoelectronics, such as field-effect transistors (FETs).

First-Principles Study of Magnetic Properties of 3d Transition Metals Doped in ZnO Nanowires

The defect formation energies of transition metals (Cr, Fe, and Ni) doped in the pseudo-H passivated ZnO nanowires and bulk are systematically investigated using first-principles methods. The general chemical trends of the nanowires are similar to those of the bulk. We also show that the formation energy increases as the diameter of the nanowire decreases, indicating that the doping of magnetic ions in the ZnO nanowire becomes more difficult with decreasing diameter. We also systematically calculate the ferromagnetic properties of transition metals doped in the ZnO nanowire and bulk, and find that Cr ions of the nanowire favor ferromagnetic state, which is consistent with the experimental results. We also find that the ferromagnetic coupling state of Cr is more stable in the nanowire than in the bulk, which may lead to a higher T(c) useful for the nano-materials design of spintronics.