Metal-Free Electron Donor-Acceptor Pair Enabled Long-Term Stability of Li-CO2 Battery

The challenges of Lithium-carbon dioxide (Li-CO2) batteries for ensuring long-term cycling stability arise from the thermodynamically stable and electrically insulating discharge products (e.g., Li2CO3), which primarily rely on their interaction with the active materials. To achieve the optimized intermediates, the bifunctional electron donor-acceptor (D-A) pairs are proposed in cathode design to adjust such interactions in the case of B-O pairs. The inclusion of BC2O sites allows for the optimized redistribution of electrons via p-π conjugation. The as-obtained DO-AB pairs endow the enhanced interactions with Li+, CO2, and various intermediates, accompanied by the adjustable growth mode of Li2CO3. The shift from solvation-mediated mode into surface absorption mode in turn manipulates the morphology and decomposition kinetics of Li2CO3. Therefore, the corresponding Li-CO2 battery got twofold improved in both the capacity and reversibility. The cycling prolongs exceed 1300 h and well operates at a wide temperature range (20-50 °C) and different folding angles (0-180°). Such a strategy of introducing electron donor-acceptor pairs provides a distinct direction to optimize the lifetime of Li-CO2 battery from local structure regulation at the atomic scale, further inspiring in-depth understandings for developing electrochemical energy storage and carbon capture technologies.

Modulation of Remote Epitaxial Heterointerface by Graphene-Assisted Attenuative Charge Transfer

Remote epitaxy (RE), substrate polarity can "penetrate" two-dimensional materials (2DMs) and act on the epi-layer, showing a prospective universal growth strategy. However, essentially, the role that 2DMs plays in RE has not been deeply investigated so far. Here, the RE of single-crystal films on the weakest polarity/iconicity substrate is realized to reveal its essence physical properties. Graphene facilitates attenuative charge transfer (ACT) from a substrate to epi-layer to construct remote interactions. Interfacial atoms are assembled into "incommensurate" epitaxial relationships through graphene to reduce misfit dislocations in the epi-layer. Moreover, graphene reduces the atomic migration barrier, leading to a tendency toward a "layer-by-layer" growth mode. Such film growth mode is different with the conventional epitaxy (CE), and it is beneficial for the fast growth of epi-layers and the reduction of dislocations at coalescence boundaries. The insightful revelation of the role of graphene reveals the interface physics of RE and provides a more valuable guide to using 2DMs to expand three-dimensional materials (3DMs) for application in devices.

Collision Electrochemical Synthesis of Metal Nanoparticles Using Electrons as Green Reducing Agent

Synthesis of high-quality metal nanoparticles (NPs) is the premise toward their downstream diverse applications. Although some electrochemical synthesis strategies have been developed, the necessary use of high-concentration electrolyte solution as current pathway and reaction medium severely limits the colloidal stability of the growing NPs in the solution and their tunability in size and shape. Herein, we report a collision electrochemical method for the synthesis of metal NPs without the use of electrolyte solution. To this end, we designed an asymmetrical electrochemical cell to control the potential (i.e., to supply electrons) in the reaction system via a separated electrochemical cell, thereby enabling the electrochemical reaction occurring in an electrolyte-free growth solution. Consequently, this collision electrochemical method, using seed-mediated growth of NPs as examples, allows the synthesis of monodisperse homogeneous Au NPs and heterogeneous Pd- and Pt-coated Au NPs at a yield comparable to that achieved in common chemical synthesis. Furthermore, this method allows readily tailoring the morphology of the resultant metal NPs just by changing the concentration of the growth solution. Therefore, our green synthesis method is important for a variety of nanomaterials beyond metal NPs.

Single-Crystalline Pyramidal TiCx Particles Grown by Biphase Diffusion Synthesis

In this study, we present single-crystalline pyramid-shaped (SP) TiC_x particles synthesized on a stacked melt (copper)-solid (titanium) substrate using a biphase diffusion synthesis (BDS) method, in which different sizes ranging from nano- to micrometer scale were obtained within the copper melt with the {100} planes exposed to air. Direct observation and further plasma treatment of the pyramids at different self-assembly stages facilitated the investigation of their growth mode, especially in the horizontal plane. The dendritic growth mode along with the edge and corner-shared modes of the SP TiC_x particles frozen on the copper surface was investigated. With SP TiC_x particles stacked on top, MoS₂-based phototransistors exhibited an up to 6-fold photocurrent increase under laser illumination at different wavelengths, which was attributed to the localized surface plasmonic resonance (LSPR) effect. The BDS method is applied for the synthesis of SP TiC_x particles, with a detailed investigation of the relevant growth mode and related applications, such as decoration for high-performance photodevices.

Dependence of the Growth Mode in Epitaxial FePt Films on Surface Free Energy

Epitaxial thin films of L1₀-ordered FePt alloys are one of the most important materials in magnetic recording and spintronics applications due to their large perpendicular magnetic anisotropy (PMA). The key to the production of these required superior properties lies in the control of the growth mode of the films. Further, it is necessary to distinguish between the effect of lattice mismatch and surface free energy on the growth mode because of their strong correlation. In this study, the effect of surface free energy on the growth mode of FePt epitaxial films was investigated using MgO, NiO, and MgON surfaces with almost the same lattice constant to exclude the effect of lattice mismatch. It was found that the growth mode can be tuned from a three-dimensional (3D) island mode on MgO to a more two-dimensional (2D)-like mode on MgON and NiO. Contact angle measurements revealed that MgON and NiO show larger surface free energy than MgO, indicating that the difference in the growth mode is due to their larger surface free energy. In addition, MgON was found to induce not only a flat surface as FePt grown on SrTiO₃ (STO), which has a small lattice mismatch, but also a larger PMA than that of STO/FePt. As larger lattice mismatch is favored to induce a higher PMA into the FePt films, MgO substrates are exclusively used, but 3D island growth is indispensable. This work demonstrates that tuning the surface free energy enables us to achieve a large PMA and flat film surface in FePt epitaxial films on MgO. The results also indicate that modifying the surface free energy is pertinent for the flexible functional design of thin films.

Growth Mode and Physiological State of Cells Prior to Biofilm Formation Affect Immune Evasion and Persistence of Staphylococcus aureus

The present study investigated Staphylococcus aureus ATCC25923 surfaceomes (cell surface proteins) during prolonged growth by subjecting planktonic and biofilm cultures (initiated from exponential or stationary cells) to label-free quantitative surfaceomics and phenotypic confirmations. The abundance of adhesion, autolytic, hemolytic, and lipolytic proteins decreased over time in both growth modes, while an opposite trend was detected for many tricarboxylic acid (TCA) cycle, reactive oxygen species (ROS) scavenging, Fe-S repair, and peptidolytic moonlighters. In planktonic cells, these changes were accompanied by decreasing and increasing adherence to hydrophobic surface and fibronectin, respectively. Specific RNA/DNA binding (cold-shock protein CspD and ribosomal proteins) and the immune evasion (SpA, ClfA, and IsaB) proteins were notably more abundant on fully mature biofilms initiated with stationary-phase cells (SDBF) compared to biofilms derived from exponential cells (EDBF) or equivalent planktonic cells. The fully matured SDBF cells demonstrated higher viability in THP-1 monocyte/macrophage cells compared to the EDBF cells. Peptidoglycan strengthening, specific urea-cycle, and detoxification enzymes were more abundant on planktonic than biofilm cells, indicating the activation of growth-mode specific pathways during prolonged cultivation. Thus, we show that S. aureus shapes its surfaceome in a growth mode-dependent manner to reach high levofloxacin tolerance (>200-times the minimum biofilm inhibitory concentration). This study also demonstrates that the phenotypic state of the cells prior to biofilm formation affects the immune-evasion and persistence-related traits of S. aureus.

van der Waals Epitaxy of Antimony Islands, Sheets, and Thin Films on Single-Crystalline Graphene

Antimony (Sb) nanostructures, including islands, sheets, and thin films, of high crystallinity were epitaxially grown on single-crystalline graphene through van der Waals interactions. Two types of graphene substrates grown by chemical vapor deposition were used, the as-grown graphene on Cu(111)/ c-sapphire and the transferred graphene on SiO₂/Si. On the as-grown graphene, deposition of ultrathin Sb resulted in two growth modes and associated morphologies of Sb. One was Sb islands grown in Volmer-Weber (VW) mode, and the other was Sb sheets grown in Frank-van der Merve (FM) mode. In contrast, only Sb islands grown in VW mode were found in a parallel growth experiment on the transferred graphene. The existence of Sb sheets on the as-grown graphene was attributed to the remote epitaxy between Sb and Cu underneath the graphene. In addition, Sb thin films were grown on both the as-grown and transferred graphene substrates. Both films indicated high quality, and no significant difference can be found between these two films. This work unveiled two epitaxial alignments between Sb(0001) and graphene, namely, Sb [101̅0]∥graphene [10] for Sb islands and Sb [21̅1̅0]∥graphene [10] for Sb sheets. For Sb thin films on graphene, the epitaxial alignment followed that of Sb islands, implying that Sb thin films originated from the continued growth of Sb islands. Last, Raman spectroscopy was used to probe the state of graphene under ultrathin Sb. No strain, doping, or disorder was found in the graphene postgrowth of Sb. The knowledge of the interface formation between ultrathin Sb and graphene provides a valuable foundation for future research on van der Waals heterostructures between antimonene and graphene.

Direct Nanoscale Analysis of Temperature-Resolved Growth Behaviors of Ultrathin Perovskites on SrTiO3

Revealing growth mechanism of a thin film and properties of its film-substrate interface necessarily require microscopic investigations on the initial growth stages in temperature- and thickness-resolved manners. Here we applied in situ scanning tunneling microscopy and atomic force microscopy to investigate the growth dynamics in homo- (SrTiO3) and hetero- (SrRuO3) epitaxies on SrTiO3(001). A comparison of temperature-dependent surface structures of SrRuO3 and SrTiO3 films suggests that the peculiar growth mode switching from a "layer-by-layer" to "step-flow" type in a SrRuO3 films arises from a reduction of surface migration barrier, caused by the change in the chemical configuration of the interface between the topmost and underlying layers. Island densities in perovskite epitaxies exhibited a clear linear inverse-temperature dependence. A prototypical study on island nucleation stage of SrTiO3 homoepitaxy revealed that classical diffusion model is valid for the perovskite growths.

Effects of experimental conditions on the morphologies, structures and growth modes of pulsed laser-deposited CdS nanoneedles

CdS nanoneedles with different morphologies, structures, and growth modes have been grown on Ni-coated Si(100) surface under different experimental conditions by pulsed laser deposition method. The effects of catalyst layer, substrate temperature, and laser pulse energy on the growth of the CdS nanoneedles were studied in detail. It was confirmed that the formation of the molten catalyst spheres is the key to the nucleation of the CdS nanoneedles by observing the morphologies of the Ni catalyst thin films annealed at different substrate temperatures. Both the substrate temperature and laser pulse energy strongly affected the growth modes of the CdS nanoneedles. The secondary growth of the smaller nanoneedles on the top of the main nanoneedles was found at appropriate conditions. A group of more completed pictures of the growth modes of the CdS nanoneedles were presented.

Ni nanocrystals on HOPG(0001): A scanning tunnelling microscope study

The growth mode of small Ni clusters evaporated in UHV on HOPG has been investigated by scanning tunnelling microscopy. The size, the size distribution, and the shape of the clusters have been evaluated for different evaporation conditions and annealing temperatures. The total coverage of the surface strongly depends on the evaporation rate and time, whereas the influence of these parameters is low on the cluster size. Subsequent stepwise annealing has been performed. This results in a reduction of the total amount of the Ni clusters accompanied by a decreasing in the overall coverage of the surface. The diameter of the clusters appears to be less influenced by the annealing than is their height. Besides this, the cluster shape is strongly influenced, changing to a quasi-hexagonal geometry after the first annealing step, indicating single-crystal formation. Finally, a reproducible methodology for picking up individual clusters is reported [1].

Initial stage growth of GexSi1-x layers and Ge quantum dot formation on GexSi1-x surface by MBE

Critical thicknesses of two-dimensional to three-dimensional growth in GexSi1-x layers were measured as a function of composition for different growth temperatures. In addition to the (2 × 1) superstructure for a Ge film grown on Si(100), the GexSi1-x layers are characterized by the formation of (2 × n) reconstruction. We measured n for all layers of Ge/GexSi1-x/Ge heterosystem using our software with respect to the video recording of reflection high-energy electron diffraction (RHEED) pattern during growth. The n reaches a minimum value of about 8 for clear Ge layer, whereas for GexSi1-x films, n is increased from 8 to 14. The presence of a thin strained film of the GexSi1-x caused not only the changes in critical thicknesses of the transitions, but also affected the properties of the germanium nanocluster array for the top Ge layer. Based on the RHEED data, the hut-like island form, which has not been previously observed by us between the hut and dome islands, has been detected. Data on the growth of Ge/GexSi1-x/Ge heterostructures with the uniform array of islands in the second layer of the Ge film have been received.