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Kim M, Rehman MA, Lee D, Wang Y, Lim DH, Khan MF, Choi H, Shao QY, Suh J, Lee HS, Park HH. Filamentary and Interface-Type Memristors Based on Tantalum Oxide for Energy-Efficient Neuromorphic Hardware. ACS Appl Mater Interfaces 2022; 14:44561-44571. [PMID: 36164762 DOI: 10.1021/acsami.2c12296] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
To implement artificial neural networks (ANNs) based on memristor devices, it is essential to secure the linearity and symmetry in weight update characteristics of the memristor, and reliability in the cycle-to-cycle and device-to-device variations. This study experimentally demonstrated and compared the filamentary and interface-type resistive switching (RS) behaviors of tantalum oxide (Ta2O5 and TaO2)-based devices grown by atomic layer deposition (ALD) to propose a suitable RS type in terms of reliability and weight update characteristics. Although Ta2O5 is a strong candidate for memristor, the filament-type RS behavior of Ta2O5 does not fit well with ANNs demanding analog memory characteristics. Therefore, this study newly designed an interface-type TaO2 memristor and compared it to a filament type of Ta2O5 memristor to secure the weight update characteristics and reliability. The TaO2-based interface-type memristor exhibited gradual RS characteristics and area dependency in both high- and low-resistance states. In addition, compared to the filamentary memristor, the RS behaviors of the TaO2-based interface-type device exhibited higher suitability for the neuromorphic, symmetric, and linear long-term potentiation (LTP) and long-term depression (LTD). These findings suggest better types of memristors for implementing ionic memristor-based ANNs among the two types of RS mechanisms.
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Affiliation(s)
- Minjae Kim
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, South Korea
| | - Malik Abdul Rehman
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, South Korea
| | - Donghyun Lee
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Korea
| | - Yue Wang
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, South Korea
| | - Dong-Hyeok Lim
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Korea
| | - Muhammad Farooq Khan
- Department of Electrical Engineering, Sejong University, Seoul 05006, South Korea
| | - Haryeong Choi
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, South Korea
| | - Qing Yi Shao
- Provincial Key Laboratory of Nuclear Science, Institute of Quantum Matter, South China Normal University, Guangzhou 510006, China
| | - Joonki Suh
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Korea
| | - Hong-Sub Lee
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Gyeonggi-do 17104, Korea
| | - Hyung-Ho Park
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, South Korea
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