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Liu L, Xu W, Ni Y, Xu Z, Cui B, Liu J, Wei H, Xu W. Stretchable Neuromorphic Transistor That Combines Multisensing and Information Processing for Epidermal Gesture Recognition. ACS Nano 2022; 16:2282-2291. [PMID: 35083912 DOI: 10.1021/acsnano.1c08482] [Citation(s) in RCA: 22] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
We fabricated a nanowire-channel intrinsically stretchable neuromorphic transistor (NISNT) that perceives both tactile and visual information and emulates neuromorphic processing capabilities. The device demonstrated excellent stretching endurance of 1000 stretch cycles while retaining stable electrical properties. The device was then applied as a multisensitive afferent nerve that processes information in parallel. Compatible with skin deformation, the devices are attached to fingers to serve as conformal strain sensors and neuromorphic information-processing units for gesture recognition. The excitatory postsynaptic current in each device represents shape changes and is then analyzed using softmax activation processing of the neural network to recognize gestures. A multistage neural network that uses NISNT was used to further confirm the gestures. This work demonstrated an idea toward multisensory artificial nerves and neuromorphic systems.
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Affiliation(s)
- Lu Liu
- Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin, 300350, P. R. China
- Key Laboratory of Optoelectronic Thin Film Devices and Technology of TianjinNankai University, Tianjin, 300350, P. R. China
- Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, Nankai University, Tianjin, 300350, P. R. China
- National Institute for Advanced Materials, Nankai University, Tianjin, 300350, P. R. China
| | - Wenlong Xu
- Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin, 300350, P. R. China
- Key Laboratory of Optoelectronic Thin Film Devices and Technology of TianjinNankai University, Tianjin, 300350, P. R. China
- Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, Nankai University, Tianjin, 300350, P. R. China
- National Institute for Advanced Materials, Nankai University, Tianjin, 300350, P. R. China
| | - Yao Ni
- Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin, 300350, P. R. China
- Key Laboratory of Optoelectronic Thin Film Devices and Technology of TianjinNankai University, Tianjin, 300350, P. R. China
- Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, Nankai University, Tianjin, 300350, P. R. China
- National Institute for Advanced Materials, Nankai University, Tianjin, 300350, P. R. China
| | - Zhipeng Xu
- Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin, 300350, P. R. China
- Key Laboratory of Optoelectronic Thin Film Devices and Technology of TianjinNankai University, Tianjin, 300350, P. R. China
- Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, Nankai University, Tianjin, 300350, P. R. China
- National Institute for Advanced Materials, Nankai University, Tianjin, 300350, P. R. China
| | - Binbin Cui
- Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin, 300350, P. R. China
- Key Laboratory of Optoelectronic Thin Film Devices and Technology of TianjinNankai University, Tianjin, 300350, P. R. China
- Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, Nankai University, Tianjin, 300350, P. R. China
- National Institute for Advanced Materials, Nankai University, Tianjin, 300350, P. R. China
| | - Jiaqi Liu
- Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin, 300350, P. R. China
- Key Laboratory of Optoelectronic Thin Film Devices and Technology of TianjinNankai University, Tianjin, 300350, P. R. China
- Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, Nankai University, Tianjin, 300350, P. R. China
- National Institute for Advanced Materials, Nankai University, Tianjin, 300350, P. R. China
| | - Huanhuan Wei
- Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin, 300350, P. R. China
- Key Laboratory of Optoelectronic Thin Film Devices and Technology of TianjinNankai University, Tianjin, 300350, P. R. China
- Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, Nankai University, Tianjin, 300350, P. R. China
- National Institute for Advanced Materials, Nankai University, Tianjin, 300350, P. R. China
| | - Wentao Xu
- Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin, 300350, P. R. China
- Key Laboratory of Optoelectronic Thin Film Devices and Technology of TianjinNankai University, Tianjin, 300350, P. R. China
- Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, Nankai University, Tianjin, 300350, P. R. China
- National Institute for Advanced Materials, Nankai University, Tianjin, 300350, P. R. China
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