Design of Preamplifier for Ultrasound Transducers

In diagnostic ultrasound imaging applications, preamplifiers are used as first-stage analog front-end amplifiers for ultrasound transducers because they can amplify weak acoustic signals generated directly by ultrasound transducers. For emerging diagnostic ultrasound imaging applications, different types of preamplifiers with specific design parameters and circuit topologies have been developed, depending on the types of the ultrasound transducer. In particular, the design parameters of the preamplifier, such as the gain, bandwidth, input- or output-referred noise components, and power consumption, have a tradeoff relationship. Guidelines on the detailed design concept, design parameters, and specific circuit design techniques of the preamplifier used for ultrasound transducers are outlined in this paper, aiming to help circuit designers and academic researchers optimize the performance of ultrasound transducers used in the diagnostic ultrasound imaging applications for research directions.

3.6 mW Active-Electrode ECG/ETI Sensor System Using Wideband Low-Noise Instrumentation Amplifier and High Impedance Balanced Current Driver

An active electrode (AE) and back-end (BE) integrated system for enhanced electrocardiogram (ECG)/electrode-tissue impedance (ETI) measurement is proposed. The AE consists of a balanced current driver and a preamplifier. To increase the output impedance, the current driver uses a matched current source and sink, which operates under negative feedback. To increase the linear input range, a new source degeneration method is proposed. The preamplifier is realized using a capacitively-coupled instrumentation amplifier (CCIA) with a ripple-reduction loop (RRL). Compared to the traditional Miller compensation, active frequency feedback compensation (AFFC) achieves bandwidth extension using the reduced size of the compensation capacitor. The BE performs three types of signal sensing: ECG, band power (BP), and impedance (IMP) data. The BP channel is used to detect the Q-, R-, and S-wave (QRS) complex in the ECG signal. The IMP channel measures the resistance and reactance of the electrode-tissue. The integrated circuits for the ECG/ETI system are realized in the 180 nm CMOS process and occupy a 1.26 mm² area. The measured results show that the current driver supplies a relatively high current (>600 μA_pp) and achieves a high output impedance (1 MΩ at 500 kHz). The ETI system can detect resistance and capacitance in the ranges of 10 mΩ-3 kΩ and 100 nF-100 μF, respectively. The ECG/ETI system consumes 3.6 mW using a single 1.8 V supply.

A Semi-Blind Calibration and Compensation Method for Dynamic Range Recovery of Low-Power Pre-Amplifiers in MRI Receive Chains

To enable wireless MRI receive arrays, per-channel power consumption must be reduced by a significant factor. To address this, a low-power SiGe alternative to industry standard MRI pre-amplifier blocks has been proposed and its impact on imaging performance evaluated in a benchtop environment. The SiGe amplifier reduces power consumption 28x, but exhibits increased non-linearity and reduced dynamic range relative to industry standard amplifiers. This distorts the images, causing reduced contrast and a blurring of fine features. In conjunction with the amplifier, a semi-blind calibration and compensation framework has been proposed to remove artifacts caused by this non-linearity. Requiring the knowledge of the calibration signal bandwidth, the associated peak transmit powers, and the distorted baseband signals, a second non-linearity is constructed that when cascaded with the receive chain produces a linear response. This method was evaluated for both knee and phantom image datasets of peak input power -20dBm with a -40dBm peak input power image as reference. In the benchtop environment, industry standard amplifiers produced input normalized RMSEs of 0.0199 and 0.0310 for phantom and knee datasets, respectively. The low-power SiGe amplifier resulted in RMSEs of 0.0869 and 0.1130 which were reduced to 0.0158 and 0.0168 following compensation, for phantom and knee images respectively. The ability to effectively compensate for this reduced dynamic range encourages further investigation of low-power SiGe amplifiers for power limited MRI receive arrays.

Integrated Circuit Design for Radiation-Hardened Charge-Sensitive Amplifier Survived up to 2 Mrad

According to the continuous development of metal-oxide semiconductor (MOS) fabrication technology, transistors have naturally become more radiation-tolerant through steadily decreasing gate-oxide thickness, increasing the tunneling probability between gate-oxide and channel. Unfortunately, despite this radiation-hardened property of developed transistors, the field of nuclear power plants (NPPs) requires even higher radiation hardness levels. Particularly, total ionizing dose (TID) of approximately 1 Mrad could be required for readout circuitry under severe accident conditions with 100 Mrad around a reactor in-core required. In harsh radiating environments such as NPPs, sensors such as micro-pocket-fission detectors (MPFD) would be a promising technology to be operated for detecting neutrons in reactor cores. For those sensors, readout circuits should be fundamentally placed close to sensing devices for minimizing signal interferences and white noise. Therefore, radiation hardening ability is necessary for the circuits under high radiation environments. This paper presents various integrated circuit designs for a radiation hardened charge-sensitive amplifier (CSA) by using SiGe 130 nm and Si 180 nm fabrication processes with different channel widths and transistor types of complementary metal-oxide-semiconductor (CMOS) and bipolar CMOS (BiCMOS). These circuits were tested under γ–ray environment with Cobalt-60 of high level activity: 490 kCi. The experiment results indicate amplitude degradation of 2.85%–34.3%, fall time increase of 201–1730 ns, as well as a signal-to-noise ratio (SNR) of 0.07–11.6 dB decrease with irradiation dose increase. These results can provide design guidelines for radiation hardening operational amplifiers in terms of transistor sizes and structures.

Photocurrent Measurement of PC and PV HgCdTe Detectors

Novel preamplifiers for working standard photoconductive (PC) and photovoltaic (PV) HgCdTe detectors have been developed to maintain the spectral responsivity scale of the National Institute of Standards and Technology (NIST) in the wavelength range of 5 μm to 20 μm. The linear PC mode preamplifier does not need any compensating source to zero the effect of the detector bias current for the preamplifier output. The impedance multiplication concept with a positive feedback buffer amplifier was analyzed and utilized in a bootstrap PV transimpedance amplifier to measure photocurrent of a 200 Ω shunt resistance photodiode with a maximum signal gain of 10(8) V/A. In spite of the high performance lock-in used as a second-stage signal-amplifier, the signal-to-noise ratio had to be optimized for the output of the photocurrent preamplifiers. Noise and drift were equalized for the output of the PV mode preamplifier. The signal gain errors were calculated to determine the signal frequency range where photocurrent-to-voltage conversion can be performed with very low uncertainties. For the design of both PC and PV detector preamplifiers, the most important gain equations are described. Measurement results on signal ranges and noise performance are discussed.