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Lian X, Liu C, Fu J, Liu X, Ren Q, Wan X, Xiao W, Cai Z, Wang L. Design of plasmonic enhanced all-optical phase-change memory for secondary storage applications. Nanotechnology 2022; 33:495204. [PMID: 35973383 DOI: 10.1088/1361-6528/ac89f6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/10/2022] [Accepted: 08/16/2022] [Indexed: 06/15/2023]
Abstract
Phase-change optical device has recently gained tremendous interest due to its ultra-fast transmitting speed, multiplexing and large bandwidth. However, majority of phase-change optical devices are only devoted to on-chip components such as optical tensor core and optical main memory, while developing a secondary storage memory in an optical manner is rarely reported. To address this issue, we propose a novel phase-change optical memory based on plasmonic resonance effects for secondary storage applications. Such design makes use of the plasmonic dimer nanoantenna to generate plasmonic resonance inside the chalcogenide alloy, and thus enables the performance improvements in terms of energy consumption and switching speed. It is found that choosing height, radius, and separation of the plasmonic nanoantenna as 10 nm, 150 nm, and 10 nm, respectively, allows for a write/erase energies of 100 and 240 pJ and a write/erase speed of 10 ns for crystallization and amorphization processes, respectively. Such performance merits encouragingly prevail conventional secondary storage memories and thus pave a route towards the advent of all-optical computer in near future.
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Affiliation(s)
- Xiaojuan Lian
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
- National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Cunhu Liu
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Jinke Fu
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Xiaoyan Liu
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Qingying Ren
- Electrical and Electronic Center, College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Xiang Wan
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Wanang Xiao
- Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering & School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Jiangsu JITRI Intelligent Integrated Circuit Design Technology Co., Ltd, Wuxi, Jiangsu 214028, People's Republic of China
| | - Zhikuang Cai
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Lei Wang
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
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Baek SH, Park KW. A Durable Hybrid RAM Disk with a Rapid Resilience for Sustainable IoT Devices. Sensors (Basel) 2020; 20:s20082159. [PMID: 32290359 PMCID: PMC7218718 DOI: 10.3390/s20082159] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/21/2020] [Revised: 04/01/2020] [Accepted: 04/09/2020] [Indexed: 11/16/2022]
Abstract
Flash-based storage is considered to be a de facto storage module for sustainable Internet of things (IoT) platforms under a harsh environment due to its relatively fast speed and operational stability compared to disk storage. Although their performance is considerably faster than disk-based mechanical storage devices, the read and write latency still could not catch up with that of Random-access memory (RAM). Therefore, RAM could be used as storage devices or systems for time-critical IoT applications. Despite such advantages of RAM, a RAM-based storage system has limitations in its use for sustainable IoT devices due to its nature of volatile storage. As a remedy to this problem, this paper presents a durable hybrid RAM disk enhanced with a new read interface. The proposed durable hybrid RAM disk is designed for sustainable IoT devices that require not only high read/write performance but also data durability. It includes two performance improvement schemes: rapid resilience with a fast initialization and direct byte read (DBR). The rapid resilience with a fast initialization shortens the long booting time required to initialize the durable hybrid RAM disk. The new read interface, DBR, enables the durable hybrid RAM disk to bypass the disk cache, which is an overhead in RAM-based storages. DBR performs byte-range I/O, whereas direct I/O requires block-range I/O; therefore, it provides a more efficient interface than direct I/O. The presented schemes and device were implemented in the Linux kernel. Experimental evaluations were performed using various benchmarks at the block level till the file level. In workloads where reads and writes were mixed, the durable hybrid RAM disk showed 15 times better performance than that of Solid-state drive (SSD) itself.
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Affiliation(s)
- Sung Hoon Baek
- Department of Computer System Engineering, Jungwon University, Chungcheongbuk-do 28024, Korea;
| | - Ki-Woong Park
- Department of Computer and Information Security, Sejong University, Seoul 05006, Korea
- Correspondence: ; Tel.: +82-2-6935-2453
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Abstract
Mucopolysaccharidoses are a group of genetically inherited disorders that result from the defective activity of lysosomal enzymes involved in glycosaminoglycan catabolism, causing their intralysosomal accumulation. Sanfilippo disease describes a subset of mucopolysaccharidoses resulting from defects in heparan sulfate catabolism. Sanfilippo disorders cause severe neuropathology in affected children. The reason for such extensive central nervous system dysfunction is unresolved, but it may be associated with the secondary accumulation of metabolites such as gangliosides. In this article, we describe the accumulation of dermatan sulfate as a novel secondary metabolite in Sanfilippo. Based on chondroitinase ABC digestion, chondroitin/dermatan sulfate levels in fibroblasts from Sanfilippo patients were elevated 2-5-fold above wild-type dermal fibroblasts. Lysosomal turnover of chondroitin/dermatan sulfate in these cell lines was significantly impaired but could be normalized by reducing heparan sulfate storage using enzyme replacement therapy. Examination of chondroitin/dermatan sulfate catabolic enzymes showed that heparan sulfate and heparin can inhibit iduronate 2-sulfatase. Analysis of the chondroitin/dermatan sulfate fraction by chondroitinase ACII digestion showed dermatan sulfate storage, consistent with inhibition of iduronate 2-sulfatase. The discovery of a novel storage metabolite in Sanfilippo patients may have important implications for diagnosis and understanding disease pathology.
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Affiliation(s)
- William C. Lamanna
- From the Department of Cellular and Molecular Medicine, Glycobiology Research and Training Center, University of California, San Diego, La Jolla, California 92093-0687
| | - Roger Lawrence
- From the Department of Cellular and Molecular Medicine, Glycobiology Research and Training Center, University of California, San Diego, La Jolla, California 92093-0687
| | - Stéphane Sarrazin
- From the Department of Cellular and Molecular Medicine, Glycobiology Research and Training Center, University of California, San Diego, La Jolla, California 92093-0687
| | - Jeffrey D. Esko
- From the Department of Cellular and Molecular Medicine, Glycobiology Research and Training Center, University of California, San Diego, La Jolla, California 92093-0687
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