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He G, Ramamoorthy H, Kwan CP, Lee YH, Nathawat J, Somphonsane R, Matsunaga M, Higuchi A, Yamanaka T, Aoki N, Gong Y, Zhang X, Vajtai R, Ajayan PM, Bird JP. Thermally Assisted Nonvolatile Memory in Monolayer MoS 2 Transistors. Nano Lett 2016; 16:6445-6451. [PMID: 27680095 DOI: 10.1021/acs.nanolett.6b02905] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
We demonstrate a novel form of thermally-assisted hysteresis in the transfer curves of monolayer MoS2 FETs, characterized by the appearance of a large gate-voltage window and distinct current levels that differ by a factor of ∼102. The hysteresis emerges for temperatures in excess of 400 K and, from studies in which the gate-voltage sweep parameters are varied, appears to be related to charge injection into the SiO2 gate dielectric. The thermally-assisted memory is strongly suppressed in equivalent measurements performed on bilayer transistors, suggesting that weak screening in the monolayer system plays a vital role in generating its strongly sensitive response to the charge-injection process. By exploiting the full features of the hysteretic transfer curves, programmable memory operation is demonstrated. The essential principles demonstrated here point the way to a new class of thermally assisted memories based on atomically thin two-dimensional semiconductors.
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Affiliation(s)
- G He
- Department of Electrical Engineering, University at Buffalo, The State University of New York , Buffalo, New York 14260-1900, United States
| | - H Ramamoorthy
- Department of Electrical Engineering, University at Buffalo, The State University of New York , Buffalo, New York 14260-1900, United States
| | - C-P Kwan
- Department of Physics, University at Buffalo, The State University of New York , Buffalo, New York 14260-1500, United States
| | - Y-H Lee
- Department of Electrical Engineering, University at Buffalo, The State University of New York , Buffalo, New York 14260-1900, United States
| | - J Nathawat
- Department of Electrical Engineering, University at Buffalo, The State University of New York , Buffalo, New York 14260-1900, United States
| | - R Somphonsane
- Department of Physics, King Mongkut's Institute of Technology Ladkrabang , Bangkok 10520, Thailand
| | - M Matsunaga
- Graduate School of Advanced Integration Science, Chiba University , 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
| | - A Higuchi
- Graduate School of Advanced Integration Science, Chiba University , 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
| | - T Yamanaka
- Graduate School of Advanced Integration Science, Chiba University , 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
| | - N Aoki
- Graduate School of Advanced Integration Science, Chiba University , 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
| | - Y Gong
- Department of Materials Science and NanoEngineering, Rice University , Houston, Texas 77005, United States
| | - X Zhang
- Department of Materials Science and NanoEngineering, Rice University , Houston, Texas 77005, United States
| | - R Vajtai
- Department of Materials Science and NanoEngineering, Rice University , Houston, Texas 77005, United States
| | - P M Ajayan
- Department of Materials Science and NanoEngineering, Rice University , Houston, Texas 77005, United States
| | - J P Bird
- Department of Electrical Engineering, University at Buffalo, The State University of New York , Buffalo, New York 14260-1900, United States
- Graduate School of Advanced Integration Science, Chiba University , 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
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