Resonance assisted jump-in voltage reduction for electrostatically actuated nanobeam-based gateless NEM switches

Electrostatically actuated nanobeam-based electromechanical switches have shown promise for versatile novel applications, such as low power devices. However, their widespread use is restricted due to poor reliability resulting from high jump-in voltages. This article reports a new method for lowering the jump-in voltage by inducing mechanical oscillations in the active element during the switching ON process, reducing the jump-in voltage by more than three times. Ge_0.91Sn_0.09 alloy and Bi₂Se₃ nanowire-based nanoelectromechanical switches were constructed in situ to demonstrate the operation principles and advantages of the proposed method.

Determination of Young's modulus of Sb2S3 nanowires by in situ resonance and bending methods

In this study we address the mechanical properties of Sb2S3 nanowires and determine their Young's modulus using in situ electric-field-induced mechanical resonance and static bending tests on individual Sb2S3 nanowires with cross-sectional areas ranging from 1.1·10(4) nm(2) to 7.8·10(4) nm(2). Mutually orthogonal resonances are observed and their origin explained by asymmetric cross section of nanowires. The results obtained from the two methods are consistent and show that nanowires exhibit Young's moduli comparable to the value for macroscopic material. An increasing trend of measured values of Young's modulus is observed for smaller thickness samples.