A Universal Perovskite/C60 Interface Modification via Atomic Layer Deposited Aluminum Oxide for Perovskite Solar Cells and Perovskite-Silicon Tandems

The primary performance limitation in inverted perovskite-based solar cells is the interface between the fullerene-based electron transport layers and the perovskite. Atomic layer deposited thin aluminum oxide (AlOX) interlayers that reduce nonradiative recombination at the perovskite/C60 interface are developed, resulting in >60 millivolts improvement in open-circuit voltage and 1% absolute improvement in power conversion efficiency. Surface-sensitive characterizations indicate the presence of a thin, conformally deposited AlOx layer, functioning as a passivating contact. These interlayers work universally using different lead-halide-based absorbers with different compositions where the 1.55 electron volts bandgap single junction devices reach >23% power conversion efficiency. A reduction of metallic Pb0 is found and the compact layer prevents in- and egress of volatile species, synergistically improving the stability. AlOX-modified wide-bandgap perovskite absorbers as a top cell in a monolithic perovskite-silicon tandem enable a certified power conversion efficiency of 29.9% and open-circuit voltages above 1.92 volts for 1.17 square centimeters device area.

Multifunctional sulfonium-based treatment for perovskite solar cells with less than 1% efficiency loss over 4,500-h operational stability tests

The stabilization of grain boundaries and surfaces of the perovskite layer is critical to extend the durability of perovskite solar cells. Here we introduced a sulfonium-based molecule, dimethylphenethylsulfonium iodide (DMPESI), for the post-deposition treatment of formamidinium lead iodide perovskite films. The treated films show improved stability upon light soaking and remains in the black α phase after two years ageing under ambient condition without encapsulation. The DMPESI-treated perovskite solar cells show less than 1% performance loss after more than 4,500 h at maximum power point tracking, yielding a theoretical T80 of over nine years under continuous 1-sun illumination. The solar cells also display less than 5% power conversion efficiency drops under various ageing conditions, including 100 thermal cycles between 25 °C and 85 °C and an 1,050-h damp heat test.

Controlled Li Alloying by Postsynthesis Electrochemical Treatment of Cu2ZnSn(S, Se)4 Absorbers for Solar Cells

Li-alloying of Cu2ZnSn(S, Se)4 (CZTSSe) absorbers is widely accepted for its beneficial influence on the performance of CZTSSe-based thin film solar cells. Given the degraded morphology characteristic of absorbers synthesized in the presence of excess Li concentrations, it is speculated that Li may be best incorporated into the absorber after synthesis. Here, we report an innovative method to add Li to synthesized CZTSSe by an electrochemical treatment using a liquid electrolyte. Our approach decouples Li addition from absorber synthesis, allowing one to possibly overcome morphology issues associated with high Li concentration. We show that Li is thereby transferred to the absorber and is incorporated into the crystal lattice. The resulting Li concentration in the absorber can be easily controlled by the treatment parameters. Using liquid electrolytes allows a straightforward disassembly of the lithiation setup and hence the fabrication of solar cells after electrochemical treatment. Electrochemically lithiated solar cells reached power conversion efficiencies of up to 9.0%. Further optimization of this innovative method is required to reduce expected interface issues resulting from the electrochemical treatment to demonstrate a gain in the power conversion efficiency of the CZTSSe solar cells. Finally, our results indicate strong lateral Li diffusion, which deserves further investigation. Moreover, the method could be transferred to other material systems, such as Cu(In, Ga)Se2 (CIGS), and adapted to treat layers with other alkali elements such as Na.

Revealing the Role of Tin Fluoride Additive in Narrow Bandgap Pb-Sn Perovskites for Highly Efficient Flexible All-Perovskite Tandem Cells

Tin fluoride (SnF2) is an indispensable additive for high-efficiency Pb-Sn perovskite solar cells (PSCs). However, the spatial distribution of SnF2 in the perovskite absorber is seldom investigated while essential for a comprehensive understanding of the exact role of the SnF2 additive. Herein, we revealed the spatial distribution of the SnF2 additive and made structure-optoelectronic properties-flexible photovoltaic performance correlation. We observed the chemical transformation of SnF2 to a fluorinated oxy-phase on the Pb-Sn perovskite film surface due to its rapid oxidation. In addition, at the buried perovskite interface, we detected and visualized the accumulation of F- ions. We found that the photoluminescence quantum yield of Pb-Sn perovskite reached the highest value with 10 mol % SnF2 in the precursor solution. When integrating the optimized absorber in flexible devices, we obtained the flexible Pb-Sn perovskite narrow bandgap (1.24 eV) solar cells with an efficiency of 18.5% and demonstrated 23.1% efficient flexible four-terminal all-perovskite tandem cells.

Triple-cation perovskite solar cells fabricated by a hybrid PVD/blade coating process using green solvents

The scalability of highly efficient organic-inorganic perovskite solar cells (PSCs) is one of the major challenges of solar module manufacturing. Various scalable methods have been explored to strive for uniform perovskite films of high crystal quality on large-area substrates, but each of these methods has individual limitations on the potential of successful commercialization of perovskite photovoltaics. Here, we report a fully scalable hybrid process, which combines vapor- and solution-based techniques to deposit high quality uniform perovskite films on large-area substrates. This two-step process does not use toxic solvents, and it further allows easy implementation of passivation strategies and additives. We fabricate PSCs based on this process and use blade coating to deposit a SnO2 electron transporting layer and Spiro-OMeTAD hole transporting layer without halogenated solvents in ambient air. The fabricated PSCs have achieved open-circuit voltage up to 1.16 V and power conversion efficiency of 18.7% with good uniformity on 5 cm × 5 cm substrates.

Influence of the Rear Interface on Composition and Photoluminescence Yield of CZTSSe Absorbers: A Case for an Al2O3 Intermediate Layer

The rear interface of kesterite absorbers with Mo back contact represents one of the possible sources of nonradiative voltage losses (ΔV_oc,nrad) because of the reported decomposition reactions, an uncontrolled growth of MoSe₂, or a nonoptimal electrical contact with high recombination. Several intermediate layers (IL), such as MoO₃, TiN, and ZnO, have been tested to mitigate these issues, and efficiency improvements have been reported. However, the introduction of IL also triggers other effects such as changes in alkali diffusion, altered morphology, and modifications in the absorber composition, all factors that can also influence ΔV_oc,nrad. In this study, the different effects are decoupled by designing a special sample that directly compares four rear structures (SLG, SLG/Mo, SLG/Al₂O₃, and SLG/Mo/Al₂O₃) with a Na-doped kesterite absorber optimized for a device efficiency >10%. The IL of choice is Al₂O₃ because of its reported beneficial effect to reduce the surface recombination velocity at the rear interface of solar cell absorbers. Identical annealing conditions and alkali distribution in the kesterite absorber are preserved, as measured by time-of-flight secondary ion mass spectrometry and energy-dispersive X-ray spectroscopy. The lowest ΔV_oc,nrad of 290 mV is measured for kesterite grown on Mo, whereas the kesterite absorber on Al₂O₃ exhibits higher nonradiative losses up to 350 mV. The anticipated field-effect passivation from Al₂O₃ at the rear interface could not be observed for the kesterite absorbers prepared by the two-step process, further confirmed by an additional experiment with air annealing. Our results suggest that Mo with an in situ formed MoSe₂ remains a suitable back contact for high-efficiency kesterite devices.

Fast Charge Transfer across the Li7La3Zr2O12 Solid Electrolyte/LiCoO2 Cathode Interface Enabled by an Interphase-Engineered All-Thin-Film Architecture

Lithium garnet Li₇La₃Zr₂O₁₂ (LLZO) is being investigated as a potential solid electrolyte for next-generation solid-state batteries owing to its high ionic conductivity and electrochemical stability against metallic lithium and high potential cathodes. While the LLZO/Li metal anode interface has been thoroughly investigated to achieve almost negligible interface resistances, the LLZO/cathode interface still suffers from high interfacial resistances mainly due to the high-temperature sintering required for proper ceramic bonding. In this work, the LLZO solid electrolyte/LiCoO₂ (LCO) cathode interface is investigated in an all-thin-film model system. This architecture provides an easy access to the interface for in situ and ex situ characterization, allowing one to identify the degradation processes taking place under high-temperature cosintering and to test solutions such as interface modifications. Introducing an in situ-lithiated Nb₂O₅ diffusion barrier at the interface, we were able to lower the LLZO/LCO charge transfer resistance to about 50 Ω cm², a 3-fold reduction with respect to previously reported values. The low interfacial resistance combined with the high conductance through the LLZO thin-film electrolyte allows one to investigate the charge transfer at high charge-discharge rates, unlike in bulk systems. At 1C, discharge capacities of about 140 mA h g^-1 were measured, and at 10C, 60% of the theoretical capacity was retained with a cycle life over 100 cycles. Besides the role of this architecture in the interface investigation, this work also constitutes a milestone in the development of thin-film solid-state batteries with higher power densities.

High-Mobility In2O3:H Electrodes for Four-Terminal Perovskite/CuInSe2 Tandem Solar Cells

Four-terminal (4-T) tandem solar cells (e.g., perovskite/CuInSe₂ (CIS)) rely on three transparent conductive oxide electrodes with high mobility and low free carrier absorption in the near-infrared (NIR) region. In this work, a reproducible In₂O₃:H (IO:H) film deposition process is developed by independently controlling H₂ and O₂ gas flows during magnetron sputtering, yielding a high mobility value up to 129 cm² V^-1 s^-1 in highly crystallized IO:H films annealed at 230 °C. Optimization of H₂ and O₂ partial pressures further decreases the crystallization temperature to 130 °C. By using a highly crystallized IO:H film as the front electrode in NIR-transparent perovskite solar cell (PSC), a 17.3% steady-state power conversion efficiency and an 82% average transmittance between 820 and 1300 nm are achieved. In combination with an 18.1% CIS solar cell, a 24.6% perovskite/CIS tandem device in 4-T configuration is demonstrated. Optical analysis suggests that an amorphous IO:H film (without postannealing) and a partially crystallized IO:H film (postannealed at 150 °C), when used as a rear electrode in a NIR-transparent PSC and a front electrode in a CIS solar cell, respectively, can outperform the widely used indium-doped zinc oxide (IZO) electrodes, leading to a 1.38 mA/cm² short-circuit current (J_sc) gain in the bottom CIS cell of 4-T tandems.

Solar radiation forecasting using MARS, CART, M5, and random forest model: A case study for India

Solar radiation is a critical requirement for all solar power plants. As it is a time-varying quantity, the power output of any solar power plant is also time variant in nature. Hence, for the prediction of probable electricity generation for a few days in advance, for any solar power plant, forecasting solar radiation a few days into the future is vital. Hourly forecasting for a few days in advance may help a utility or ISO in the bidding process. In this study, 1-day-ahead to 6-day-ahead hourly solar radiation forecasting was been performed using the MARS, CART, M5 and random forest models. The data required for the forecasting were collected from a solar radiation resource setup, commissioned by an autonomous body of the Government of India in Gorakhpur, India. From the results, it was determined that, for the present study, the random forest model provided the best results, whereas the CART model presented the worst results among all four models considered.

On the origin of open-circuit voltage losses in flexible n-i-p perovskite solar cells

The possibility to manufacture perovskite solar cells (PSCs) at low temperatures paves the way to flexible and lightweight photovoltaic (PV) devices manufactured via high-throughput roll-to-roll processes. In order to achieve higher power conversion efficiencies, it is necessary to approach the radiative limit via suppression of non-radiative recombination losses. Herein, we performed a systematic voltage loss analysis for a typical low-temperature processed, flexible PSC in n-i-p configuration using vacuum deposited C₆₀ as electron transport layer (ETL) and two-step hybrid vacuum-solution deposition for CH₃NH₃PbI₃ perovskite absorber. We identified the ETL/absorber interface as a bottleneck in relation to non-radiative recombination losses, the quasi-Fermi level splitting (QFLS) decreases from ~1.23 eV for the bare absorber, just ~90 meV below the radiative limit, to ~1.10 eV when C₆₀ is used as ETL. To effectively mitigate these voltage losses, we investigated different interfacial modifications via vacuum deposited interlayers (BCP, B4PyMPM, 3TPYMB, and LiF). An improvement in QFLS of ~30-40 meV is observed after interlayer deposition and confirmed by comparable improvements in the open-circuit voltage after implementation of these interfacial modifications in flexible PSCs. Further investigations on absorber/hole transport layer (HTL) interface point out the detrimental role of dopants in Spiro-OMeTAD film (widely employed HTL in the community) as recombination centers upon oxidation and light exposure.

Analysis of the Voltage Losses in CZTSSe Solar Cells of Varying Sn Content

The performance of kesterite (Cu₂ZnSn(S,Se)₄, CZTSSe) solar cells is hindered by low open circuit voltage ( V_oc). The commonly used metric for V_oc-deficit, namely, the difference between the absorber band gap and qV_oc, is not well-defined for compositionally complex absorbers like kesterite where the bandgap is hard to determine. Here, nonradiative voltage losses are analyzed by measuring the radiative limit of V_oc, using external quantum efficiency (EQE) and electroluminescence (EL) spectra, without relying on precise knowledge of the bandgap. The method is applied to a series of Cu₂ZnSn(S,Se)₄ devices with Sn content variation from 27.6 to 32.9 at. % and a corresponding V_oc range from 423 to 465 mV. Surprisingly, the lowest nonradiative loss, and hence the highest external luminescence efficiency (QE_LED), were obtained for the device with the lowest V_oc. The trend is assigned to better interface quality between absorber and CdS buffer layer at lower Sn content.

Time-resolved photoluminescence on double graded Cu(In,Ga)Se2 - Impact of front surface recombination and its temperature dependence

Time-resolved photoluminescence (TRPL) is applied to determine an effective lifetime of minority charge carriers in semiconductors. Such effective lifetimes include recombination channels in the bulk as well as at the surfaces and interfaces of the device. In the case of Cu(In,Ga)Se₂ absorbers used for solar cell applications, trapping of minority carriers has also been reported to impact the effective minority carrier lifetime. Trapping can be indicated by an increased temperature dependence of the experimentally determined photoluminescence decay time when compared to the temperature dependence of Shockley-Read-Hall (SRH) recombination alone and can lead to an overestimation of the minority carrier lifetime. Here, it is shown by technology computer-aided design (TCAD) simulations and by experiment that the intentional double-graded bandgap profile of high efficiency Cu(In,Ga)Se₂ absorbers causes a temperature dependence of the PL decay time similar to trapping in case of a recombinative front surface. It is demonstrated that a passivated front surface results in a temperature dependence of the decay time that can be explained without minority carrier trapping and thus enables the assessment of the absorber quality by means of the minority carrier lifetime. Comparison with the absolute PL yield and the quasi-Fermi-level splitting (QFLS) corroborate the conclusion that the measured decay time corresponds to the bulk minority carrier lifetime of 250 ns for the double-graded CIGS absorber under investigation.

Bulk and surface recombination properties in thin film semiconductors with different surface treatments from time-resolved photoluminescence measurements

The knowledge of minority carrier lifetime of a semiconductor is important for the assessment of its quality and design of electronic devices. Time-resolved photoluminescence (TRPL) measurements offer the possibility to extract effective lifetimes in the nanosecond range. However, it is difficult to discriminate between surface and bulk recombination and consequently the bulk properties of the semiconductor cannot be estimated reliably. Here we present an approach to constrain systematically the bulk and surface recombination parameters in semiconducting layers and reduces to finding the roots of a mathematical function. This method disentangles the bulk and surface recombination based on TRPL decay times of samples with different surface preparations. The technique is exemplarily applied to a CuInSe₂ and a back-graded Cu(In,Ga)Se₂ compound semiconductor, and upper and lower bounds for the recombination parameters and the mobility are obtained. Sets of calculated parameters are extracted and used as input for simulations of photoluminescence transients, yielding a good match to experimental data and validating the effectiveness of the methodology. A script for the simulation of TRPL transients is provided.

ALD-Zn xTi yO as Window Layer in Cu(In,Ga)Se2 Solar Cells

We report on the application of Zn _xTi _yO deposited by atomic layer deposition (ALD) as buffer layer in thin film Cu(In,Ga)Se₂ (CIGS) solar cells to improve the photovoltaic device performance. State-of-the-art CIGS devices employ a CdS/ZnO layer stack sandwiched between the absorber layer and the front contact. Replacing the sputter deposited ZnO with ALD-Zn _xTi _yO allowed a reduction of the CdS layer thickness without adversely affecting open-circuit voltage ( V_OC). This leads to an increased photocurrent density with a device efficiency of up to 20.8% by minimizing the parasitic absorption losses commonly observed for CdS. ALD was chosen as method to deposit homogeneous layers of Zn _xTi _yO with varying Ti content with a [Ti]/([Ti] + [Zn]) atomic fraction up to ∼0.35 at a relatively low temperature of 373 K. The Ti content influenced the absorption behavior of the Zn _xTi _yO layer by increasing the optical bandgap >3.5 eV in the investigated range. Temperature-dependent current-voltage ( I- V) measurements of solar cells were performed to investigate the photocurrent blocking behavior observed for high Ti content. Possible conduction band discontinuities introduced by Zn _xTi _yO are discussed based on X-ray photoelectron spectroscopy (XPS) measurements.

Draw-spun, photonically annealed Ag fibers as alternative electrodes for flexible CIGS solar cells

We explore the feasibility of Ag fiber meshes as electron transport layer for high-efficiency flexible Cu(In,Ga)Se₂ (CIGS) solar cells. Woven meshes of Ag fibers after UV illumination and millisecond flash-lamp treatment results in a sheet resistance of 17 Ω/sq and a visible transmittance above 85%. Conductive Ag meshes are integrated into flexible CIGS cells as transparent conductive electrode (TCE) alone or together with layers of Al-doped ZnO (AZO) with various thickness of 0…900 nm. The Ag mesh alone is not able to function as a current collector. If used together with a thin AZO layer (50 nm), the Ag mesh markedly improves the fill factor and cell efficiency, in spite of the adverse mesh shadowing. When Ag mesh is combined with thicker (200 nm or 900 nm) AZO layers, no improvements in photovoltaic parameters are obtained. When comparing a hybrid TCE consisting of 50 nm AZO and Ag fiber mesh with a thick 900 nm reference AZO device, an improved charge carrier collection in the near-infrared range is observed. Regardless of the AZO thickness, the presence of Ag mesh slows down cell degradation upon mechanical tensile stress, which could be interesting for implementation into flexible thin film CIGS modules.

Voids and compositional inhomogeneities in Cu(In,Ga)Se2 thin films: evolution during growth and impact on solar cell performance

Structural defects such as voids and compositional inhomogeneities may affect the performance of Cu(In,Ga)Se2 (CIGS) solar cells. We analyzed the morphology and elemental distributions in co-evaporated CIGS thin films at the different stages of the CIGS growth by energy-dispersive x-ray spectroscopy in a transmission electron microscope. Accumulation of Cu-Se phases was found at crevices and at grain boundaries after the Cu-rich intermediate stage of the CIGS deposition sequence. It was found, that voids are caused by Cu out-diffusion from crevices and GBs during the final deposition stage. The Cu inhomogeneities lead to non-uniform diffusivities of In and Ga, resulting in lateral inhomogeneities of the In and Ga distribution. Two and three-dimensional simulations were used to investigate the impact of the inhomogeneities and voids on the solar cell performance. A significant impact of voids was found, indicating that the unpassivated voids reduce the open-circuit voltage and fill factor due to the introduction of free surfaces with high recombination velocities close to the CIGS/CdS junction. We thus suggest that voids, and possibly inhomogeneities, limit the efficiency of solar cells based on three-stage co-evaporated CIGS thin films. Passivation of the voids' internal surface may reduce their detrimental effects.

Structural and electronic properties of CdTe1-xSex films and their application in solar cells

The performance improvement of conventional CdTe solar cells is mainly limited by doping concentration and minority carrier life time. Alloying CdTe with an isovalent element changes its properties, for example its band gap and behaviour of dopants, which has a significant impact on its performance as a solar cell absorber. In this work, the structural, optical, and electronic properties of CdTe_1-xSe_x films are examined for different Se concentrations. The band gap of this compound changes with composition with a minimum of 1.40 eV for x = 0.3. We show that with increasing x, the lattice constant of CdTe_1-xSe_x decreases, which can influence the solubility of dopants. We find that alloying CdTe with Se changes the effect of Cu doping on the p-type conductivity in CdTe_1-xSe_x, reducing the achievable charge carrier concentration with increasing x. Using a front surface CdTe_1-xSe_x layer, compositional, structural and electronic grading is introduced to solar cells. The efficiency is increased, mostly due to an increase in the short-circuit current density caused by a combination of lower band gap and a better interface between the absorber and window layer, despite a loss in the open-circuit voltage caused by the lower band gap and reduced charge carrier concentration.

Refractive indices of layers and optical simulations of Cu(In,Ga)Se2 solar cells

Cu(In,Ga)Se₂ based solar cells have reached efficiencies close to 23%. Further knowledge-driven improvements require accurate determination of the material properties. Here, we present refractive indices for all layers in Cu(In,Ga)Se₂ solar cells with high efficiency. The optical bandgap of Cu(In,Ga)Se₂ does not depend on the Cu content in the explored composition range, while the absorption coefficient value is primarily determined by the Cu content. An expression for the absorption spectrum is proposed, with Ga and Cu compositions as parameters. This set of parameters allows accurate device simulations to understand remaining absorption and carrier collection losses and develop strategies to improve performances.

Aluminum Chloride-Graphite Batteries with Flexible Current Collectors Prepared from Earth-Abundant Elements

In the search for low-cost and large-scale stationary storage of electricity, nonaqueous aluminum chloride-graphite batteries (AlCl3-GBs) have received much attention due to the high natural abundances of their primary constituents, facile manufacturing, and high energy densities. Much research has focused on the judicious selection of graphite cathode materials, leading to the most notable recent advances in the performance of AlCl3-GBs. However, the major obstacle to commercializing this technology is the lack of oxidatively stable, inexpensive current collectors that can operate in chloroaluminate ionic liquids and are composed of earth-abundant elements. This study presents the use of titanium nitride (TiN) as a compelling material for this purpose. Flexible current collectors can be fabricated by coating TiN on stainless steel or flexible polyimide substrates by low-cost, rapid, scalable methods such as magnetron sputtering. When these current collectors are used in AlCl3-GB coin or pouch cells, stable cathodic operation is observed at voltages of up to 2.5 V versus Al3+/Al. Furthermore, these batteries have a high coulombic efficiency of 99.5%, power density of 4500 W kg-1, and cyclability of at least 500 cycles.

Compositionally Graded Absorber for Efficient and Stable Near-Infrared-Transparent Perovskite Solar Cells

Compositional grading has been widely exploited in highly efficient Cu(In,Ga)Se2, CdTe, GaAs, quantum dot solar cells, and this strategy has the potential to improve the performance of emerging perovskite solar cells. However, realizing and maintaining compositionally graded perovskite absorber from solution processing is challenging. Moreover, the operational stability of graded perovskite solar cells under long-term heat/light soaking has not been demonstrated. In this study, a facile partial ion-exchange approach is reported to achieve compositionally graded perovskite absorber layers. Incorporating compositional grading improves charge collection and suppresses interface recombination, enabling to fabricate near-infrared-transparent perovskite solar cells with power conversion efficiency of 16.8% in substrate configuration, and demonstrate 22.7% tandem efficiency with 3.3% absolute gain when mechanically stacked on a Cu(In,Ga)Se2 bottom cell. Non-encapsulated graded perovskite device retains over 93% of its initial efficiency after 1000 h operation at maximum power point at 60 °C under equivalent 1 sun illumination. The results open an avenue in exploring partial ion-exchange to design graded perovskite solar cells with improved efficiency and stability.

Single-graded CIGS with narrow bandgap for tandem solar cells

Multi-junction solar cells show the highest photovoltaic energy conversion efficiencies, but the current technologies based on wafers and epitaxial growth of multiple layers are very costly. Therefore, there is a high interest in realizing multi-junction tandem devices based on cost-effective thin film technologies. While the efficiency of such devices has been limited so far because of the rather low efficiency of semitransparent wide bandgap top cells, the recent rise of wide bandgap perovskite solar cells has inspired the development of new thin film tandem solar devices. In order to realize monolithic, and therefore current-matched thin film tandem solar cells, a bottom cell with narrow bandgap (~1 eV) and high efficiency is necessary. In this work, we present Cu(In,Ga)Se₂ with a bandgap of 1.00 eV and a maximum power conversion efficiency of 16.1%. This is achieved by implementing a gallium grading towards the back contact into a CuInSe₂ base material. We show that this modification significantly improves the open circuit voltage but does not reduce the spectral response range of these devices. Therefore, efficient cells with narrow bandgap absorbers are obtained, yielding the high current density necessary for thin film multi-junction solar cells.

Formation of a K-In-Se Surface Species by NaF/KF Postdeposition Treatment of Cu(In,Ga)Se2 Thin-Film Solar Cell Absorbers

A NaF/KF postdeposition treatment (PDT) has recently been employed to achieve new record efficiencies of Cu(In,Ga)Se₂ (CIGSe) thin film solar cells. We have used a combination of depth-dependent soft and hard X-ray photoelectron spectroscopy as well as soft X-ray absorption and emission spectroscopy to gain detailed insight into the chemical structure of the CIGSe surface and how it is changed by different PDTs. Alkali-free CIGSe, NaF-PDT CIGSe, and NaF/KF-PDT CIGSe absorbers grown by low-temperature coevaporation have been interrogated. We find that the alkali-free and NaF-PDT CIGSe surfaces both display the well-known Cu-poor CIGSe chemical surface structure. The NaF/KF-PDT, however, leads to the formation of bilayer structure in which a K-In-Se species covers the CIGSe compound that in composition is identical to the chalcopyrite structure of the alkali-free and NaF-PDT absorber.

Voltage dependent admittance spectroscopy for the detection of near interface defect states for thin film solar cells

Deep acceptor states at the Cu(In,Ga)Se₂/CdS interface were detected by voltage dependent admittance spectroscopy for state of the art low temperature processed chalcopyrite solar cells.

Chromium nitride as a stable cathode current collector for all-solid-state thin film Li-ion batteries

The development of highly oxidation resistant current collectors that are inert against lithium at elevated temperatures and high potentials is essential for the realization of high performance thin film solid state lithium based batteries.

Surface Passivation for Reliable Measurement of Bulk Electronic Properties of Heterojunction Devices

Quantum efficiency measurements of state of the art Cu(In,Ga)Se₂ (CIGS) thin film solar cells reveal current losses in the near infrared spectral region. These losses can be ascribed to inadequate optical absorption or poor collection of photogenerated charge carriers. Insight on the limiting mechanism is crucial for the development of more efficient devices. The electron beam induced current measurement technique applied on device cross-sections promises an experimental access to depth resolved information about the charge carrier collection probability. Here, this technique is used to show that charge carrier collection in CIGS deposited by multistage co-evaporation at low temperature is efficient over the optically active region and collection losses are minor as compared to the optical ones. Implications on the favorable absorber design are discussed. Furthermore, it is observed that the measurement is strongly affected by cross-section surface recombination and an accurate determination of the collection efficiency is not possible. Therefore it is proposed and shown that the use of an Al₂ O₃ layer deposited onto the cleaved cross-section significantly improves the accuracy of the measurement by reducing the surface recombination. A model for the passivation mechanism is presented and the passivation concept is extended to other solar cell technologies such as CdTe and Cu₂ (Zn,Sn)(S,Se)₄ .

Evolution of carbon impurities in solution-grown and sputtered Al:ZnO thin films exposed to UV light and damp heat degradation

Characterization of carbon adsorbates in solution-processed ZnO thin films exposed to UV light and humidity.

Potassium Postdeposition Treatment-Induced Band Gap Widening at Cu(In,Ga)Se₂ Surfaces--Reason for Performance Leap?

Direct and inverse photoemission were used to study the impact of alkali fluoride postdeposition treatments on the chemical and electronic surface structure of Cu(In,Ga)Se2 (CIGSe) thin films used for high-efficiency flexible solar cells. We find a large surface band gap (E(g)(Surf), up to 2.52 eV) for a NaF/KF-postdeposition treated (PDT) absorber significantly increases compared to the CIGSe bulk band gap and to the Eg(Surf) of 1.61 eV found for an absorber treated with NaF only. Both the valence band maximum (VBM) and the conduction band minimum shift away from the Fermi level. Depth-dependent photoemission measurements reveal that the VBM decreases with increasing surface sensitivity for both samples; this effect is more pronounced for the NaF/KF-PDT CIGSe sample. The observed electronic structure changes can be linked to the recent breakthroughs in CIGSe device efficiencies.

High-Efficiency Polycrystalline Thin Film Tandem Solar Cells

A promising way to enhance the efficiency of CIGS solar cells is by combining them with perovskite solar cells in tandem devices. However, so far, such tandem devices had limited efficiency due to challenges in developing NIR-transparent perovskite top cells, which allow photons with energy below the perovskite band gap to be transmitted to the bottom cell. Here, a process for the fabrication of NIR-transparent perovskite solar cells is presented, which enables power conversion efficiencies up to 12.1% combined with an average sub-band gap transmission of 71% for photons with wavelength between 800 and 1000 nm. The combination of a NIR-transparent perovskite top cell with a CIGS bottom cell enabled a tandem device with 19.5% efficiency, which is the highest reported efficiency for a polycrystalline thin film tandem solar cell. Future developments of perovskite/CIGS tandem devices are discussed and prospects for devices with efficiency toward and above 27% are given.

Enhanced Carrier Collection from CdS Passivated Grains in Solution-Processed Cu2ZnSn(S,Se)4 Solar Cells

Solution processing of Cu2ZnSn(S,Se)4 (CZTSSe)-kesterite solar cells is attractive because of easy manufacturing using readily available metal salts. The solution-processed CZTSSe absorbers, however, often suffer from poor morphology with a bilayer structure, exhibiting a dense top crust and a porous bottom layer, albeit yielding efficiencies of over 10%. To understand whether the cell performance is limited by this porous layer, a systematic compositional study using (scanning) transmission electron microscopy ((S)TEM) and energy-dispersive X-ray spectroscopy of the dimethyl sulfoxide processed CZTSSe absorbers is presented. TEM investigation revealed a thin layer of CdS that is formed around the small CZTSSe grains in the porous bottom layer during the chemical bath deposition step. This CdS passivation is found to be beneficial for the cell performance as it increases the carrier collection and facilitates the electron transport. Electron-beam-induced current measurements reveal an enhanced carrier collection for this buried region as compared to reference cells with evaporated CdS.

Alkali-templated surface nanopatterning of chalcogenide thin films: a novel approach toward solar cells with enhanced efficiency

Concepts of localized contacts and junctions through surface passivation layers are already advantageously applied in Si wafer-based photovoltaic technologies. For Cu(In,Ga)Se2 thin film solar cells, such concepts are generally not applied, especially at the heterojunction, because of the lack of a simple method yielding features with the required size and distribution. Here, we show a novel, innovative surface nanopatterning approach to form homogeneously distributed nanostructures (<30 nm) on the faceted, rough surface of polycrystalline chalcogenide thin films. The method, based on selective dissolution of self-assembled and well-defined alkali condensates in water, opens up new research opportunities toward development of thin film solar cells with enhanced efficiency.

Local band gap measurements by VEELS of thin film solar cells

This work presents a systematic study that evaluates the feasibility and reliability of local band gap measurements of Cu(In,Ga)Se2 thin films by valence electron energy-loss spectroscopy (VEELS). The compositional gradients across the Cu(In,Ga)Se2 layer cause variations in the band gap energy, which are experimentally determined using a monochromated scanning transmission electron microscope (STEM). The results reveal the expected band gap variation across the Cu(In,Ga)Se2 layer and therefore confirm the feasibility of local band gap measurements of Cu(In,Ga)Se2 by VEELS. The precision and accuracy of the results are discussed based on the analysis of individual error sources, which leads to the conclusion that the precision of our measurements is most limited by the acquisition reproducibility, if the signal-to-noise ratio of the spectrum is high enough. Furthermore, we simulate the impact of radiation losses on the measured band gap value and propose a thickness-dependent correction. In future work, localized band gap variations will be measured on a more localized length scale to investigate, e.g., the influence of chemical inhomogeneities and dopant accumulations at grain boundaries.

Potassium-induced surface modification of Cu(In,Ga)Se2 thin films for high-efficiency solar cells

Thin-film photovoltaic devices based on chalcopyrite Cu(In,Ga)Se2 (CIGS) absorber layers show excellent light-to-power conversion efficiencies exceeding 20%. This high performance level requires a small amount of alkaline metals incorporated into the CIGS layer, naturally provided by soda lime glass substrates used for processing of champion devices. The use of flexible substrates requires distinct incorporation of the alkaline metals, and so far mainly Na was believed to be the most favourable element, whereas other alkaline metals have resulted in significantly inferior device performance. Here we present a new sequential post-deposition treatment of the CIGS layer with sodium and potassium fluoride that enables fabrication of flexible photovoltaic devices with a remarkable conversion efficiency due to modified interface properties and mitigation of optical losses in the CdS buffer layer. The described treatment leads to a significant depletion of Cu and Ga concentrations in the CIGS near-surface region and enables a significant thickness reduction of the CdS buffer layer without the commonly observed losses in photovoltaic parameters. Ion exchange processes, well known in other research areas, are proposed as underlying mechanisms responsible for the changes in chemical composition of the deposited CIGS layer and interface properties of the heterojunction.

Highly efficient Cu(In,Ga)Se2 solar cells grown on flexible polymer films

Solar cells based on polycrystalline Cu(In,Ga)Se(2) absorber layers have yielded the highest conversion efficiency among all thin-film technologies, and the use of flexible polymer films as substrates offers several advantages in lowering manufacturing costs. However, given that conversion efficiency is crucial for cost-competitiveness, it is necessary to develop devices on flexible substrates that perform as well as those obtained on rigid substrates. Such comparable performance has not previously been achieved, primarily because polymer films require much lower substrate temperatures during absorber deposition, generally resulting in much lower efficiencies. Here we identify a strong composition gradient in the absorber layer as the main reason for inferior performance and show that, by adjusting it appropriately, very high efficiencies can be obtained. This implies that future manufacturing of highly efficient flexible solar cells could lower the cost of solar electricity and thus become a significant branch of the photovoltaic industry.

Dependence of the MoSe2 Formation on the Mo Orientation and the Na Concentration for Cu(In,Ga)Se2 Thin-Film Solar Cells

The formation of MoSe2 has been studied on polycrystalline Mo layers and on Mo single crystals in dependence of the Mo orientation, the Na concentration, and also as a function of the Se source and the substrate temperatures. The Mo substrates were selenized by evaporation of Se. The samples were analyzed by means of X-ray diffraction, Rutherford backscattering spectrometry, elastic recoil detection analysis, and by conventional and high-resolution transmission electron microscopy. It was found that the crystal structure and orientation of the MoSe2 layer change with increasing substrate temperature. However, the texture of MoSe2 does not depend on the orientation of the Mo substrate. It was also found that the MoSe2 growth is significantly influenced by the Na concentration at substrate temperatures of 450°C and 580°C.

Thermal, mechanical, and dielectric properties of high performance PEEK/AIN nanocomposites

The mechanical, thermal, and dielectric properties of novel high performance poly(ether-ether-ketone) (PEEK)/AIN nanocomposites were discussed. The stiffness of the nanocomposites was significantly improved in the glassy state as well as rubbery state. The coefficient of thermal expansion (CTE) of the nanocomposites was found substantially lower than that of pure PEEK. The glass transition temperature and melting temperature of the nanocomposites were increased significantly. The thermal stability and dielectric constant of the nanocomposites were increased slightly with AIN content. The significant improvement in the properties of the nanocomposites was attributed to the good adhesion between the AIN nanoparticles and the polymer matrix. The fabricated nanocomposite is very promising for use in electronics packaging substrate as an alternative substrate owing to its good thermal, mechanical and dielectric properties.

Treatment of Acute Uncomplicated Gonococcal Urethritis in Males by Rosoxacin

Twenty eight male patients with acute gonococcal, urethritis were treated, with rosoxacin 300 mg capsule, (Eradacil) as a single- dose oral therapy. Twenty six patients were cured, while two patients did not improve. Four patients developed post-gonococcal urethritis (PGU).

Cotrimoxazole Resistant Chancroid

Four male young adults, after contact with prostitutes, developed clinically typical chancroid which was resistant to cotrimoxazole alone and also in combination with tetracycline. With chloramphenicol, the response was quick and complete with no untoward side effects.