Phase-Driving Hole Spin Qubits

The spin-orbit interaction in spin qubits enables spin-flip transitions, resulting in Rabi oscillations when an external microwave field is resonant with the qubit frequency. Here, we introduce an alternative driving mechanism mediated by the strong spin-orbit interactions in hole spin qubits, where a far-detuned oscillating field couples to the qubit phase. Phase-driving at radio frequencies, orders of magnitude slower than the microwave qubit frequency, induces highly nontrivial spin dynamics, violating the Rabi resonance condition. By using a qubit integrated in a silicon fin field-effect transistor, we demonstrate a controllable suppression of resonant Rabi oscillations and their revivals at tunable sidebands. These sidebands enable alternative qubit control schemes using global fields and local far-detuned pulses, facilitating the design of dense large-scale qubit architectures with local qubit addressability. Phase-driving also decouples Rabi oscillations from noise, an effect due to a gapped Floquet spectrum and can enable Floquet engineering high-fidelity gates in future quantum processors.

Isotropic and Anisotropic g-Factor Corrections in GaAs Quantum Dots

We experimentally determine isotropic and anisotropic g-factor corrections in lateral GaAs single-electron quantum dots. We extract the Zeeman splitting by measuring the tunnel rates into the individual spin states of an empty quantum dot for an in-plane magnetic field with various strengths and directions. We quantify the Zeeman energy and find a linear dependence on the magnetic field strength that allows us to extract the g factor. The measured g factor is understood in terms of spin-orbit interaction induced isotropic and anisotropic corrections to the GaAs bulk g factor. Experimental detection and identification of minute band-structure effects in the g factor is of significance for spin qubits in GaAs quantum dots.

Ultrafast hole spin qubit with gate-tunable spin-orbit switch functionality

Quantum computers promise to execute complex tasks exponentially faster than any possible classical computer, and thus spur breakthroughs in quantum chemistry, material science and machine learning. However, quantum computers require fast and selective control of large numbers of individual qubits while maintaining coherence. Qubits based on hole spins in one-dimensional germanium/silicon nanostructures are predicted to experience an exceptionally strong yet electrically tunable spin-orbit interaction, which allows us to optimize qubit performance by switching between distinct modes of ultrafast manipulation, long coherence and individual addressability. Here we used millivolt gate voltage changes to tune the Rabi frequency of a hole spin qubit in a germanium/silicon nanowire from 31 to 219 MHz, its driven coherence time between 7 and 59 ns, and its Landé g-factor from 0.83 to 1.27. We thus demonstrated spin-orbit switch functionality, with on/off ratios of roughly seven, which could be further increased through improved gate design. Finally, we used this control to optimize our qubit further and approach the strong driving regime, with spin-flipping times as short as ~1 ns.

Edge-State Wave Functions from Momentum-Conserving Tunneling Spectroscopy

We perform momentum-conserving tunneling spectroscopy using a GaAs cleaved-edge overgrowth quantum wire to investigate adjacent quantum Hall edge states. We use the lowest five wire modes with their distinct wave functions to probe each edge state and apply magnetic fields to modify the wave functions and their overlap. This reveals an intricate and rich tunneling conductance fan structure which is succinctly different for each of the wire modes. We self-consistently solve the Poisson-Schrödinger equations to simulate the spectroscopy, reproducing the striking fans in great detail, thus, confirming the calculations. Further, the model predicts hybridization between wire states and Landau levels, which is also confirmed experimentally. This establishes momentum-conserving tunneling spectroscopy as a powerful technique to probe edge state wave functions.

Machine learning enables completely automatic tuning of a quantum device faster than human experts

Variability is a problem for the scalability of semiconductor quantum devices. The parameter space is large, and the operating range is small. Our statistical tuning algorithm searches for specific electron transport features in gate-defined quantum dot devices with a gate voltage space of up to eight dimensions. Starting from the full range of each gate voltage, our machine learning algorithm can tune each device to optimal performance in a median time of under 70 minutes. This performance surpassed our best human benchmark (although both human and machine performance can be improved). The algorithm is approximately 180 times faster than an automated random search of the parameter space, and is suitable for different material systems and device architectures. Our results yield a quantitative measurement of device variability, from one device to another and after thermal cycling. Our machine learning algorithm can be extended to higher dimensions and other technologies.

Remote Doping of Scalable Nanowire Branches

Selective-area epitaxy provides a path toward high crystal quality, scalable, complex nanowire networks. These high-quality networks could be used in topological quantum computing as well as in ultrafast photodetection schemes. Control of the carrier density and mean free path in these devices is key for all of these applications. Factors that affect the mean free path include scattering by surfaces, donors, defects, and impurities. Here, we demonstrate how to reduce donor scattering in InGaAs nanowire networks by adopting a remote-doping strategy. Low-temperature magnetotransport measurements indicate weak anti-localization-a signature of strong spin-orbit interaction-across a nanowire Y-junction. This work serves as a blueprint for achieving remotely doped, ultraclean, and scalable nanowire networks for quantum technologies.

Spectroscopy of Quantum Dot Orbitals with In-Plane Magnetic Fields

We show that in-plane magnetic-field-assisted spectroscopy allows extraction of the in-plane orientation and full 3D size parameters of the quantum mechanical orbitals of a single electron GaAs lateral quantum dot with subnanometer precision. The method is based on measuring the orbital energies in a magnetic field with various strengths and orientations in the plane of the 2D electron gas. From such data, we deduce the microscopic confinement potential landscape and quantify the degree by which it differs from a harmonic oscillator potential. The spectroscopy is used to validate shape manipulation with gate voltages, agreeing with expectations from the gate layout. Our measurements demonstrate a versatile tool for quantum dots with one dominant axis of strong confinement.

Closed-Form Weak Localization Magnetoconductivity in Quantum Wells with Arbitrary Rashba and Dresselhaus Spin-Orbit Interactions

We derive a closed-form expression for the weak localization (WL) corrections to the magnetoconductivity of a 2D electron system with arbitrary Rashba α and Dresselhaus β (linear) and β_{3} (cubic) spin-orbit interaction couplings, in a perpendicular magnetic field geometry. In a system of reference with an in-plane z[over ^] axis chosen as the high spin-symmetry direction at α=β, we formulate a new algorithm to calculate the three independent contributions that lead to WL. The antilocalization is counterbalanced by the term associated with the spin relaxation along z[over ^], dependent only on α-β. The other term is generated by two identical scattering modes characterized by spin-relaxation rates which are explicit functions of the orientation of the scattered momentum. Excellent agreement is found with data from GaAs quantum wells, where, in particular, our theory correctly captures the shift of the minima of the WL curves as a function of α/β. This suggests that the anisotropy of the effective spin-relaxation rates is fundamental to understanding the effect of the spin-orbit coupling in transport.

Evolution of the quantum Hall bulk spectrum into chiral edge states

One of the most intriguing and fundamental properties of topological systems is the correspondence between the conducting edge states and the gapped bulk spectrum. Here, we use a GaAs cleaved edge quantum wire to perform momentum-resolved spectroscopy of the quantum Hall edge states in a tunnel-coupled 2D electron gas. This reveals the momentum and position of the edge states with unprecedented precision and shows the evolution from very low magnetic fields all the way to high fields where depopulation occurs. We present consistent analytical and numerical models, inferring the edge states from the well-known bulk spectrum, finding excellent agreement with the experiment-thus providing direct evidence for the bulk to edge correspondence. In addition, we observe various features beyond the single-particle picture, such as Fermi level pinning, exchange-enhanced spin splitting and signatures of edge-state reconstruction.

Hyperfine-phonon spin relaxation in a single-electron GaAs quantum dot

Understanding and control of the spin relaxation time T1 is among the key challenges for spin-based qubits. A larger T1 is generally favored, setting the fundamental upper limit to the qubit coherence and spin readout fidelity. In GaAs quantum dots at low temperatures and high in-plane magnetic fields B, the spin relaxation relies on phonon emission and spin-orbit coupling. The characteristic dependence T1 ∝ B-5 and pronounced B-field anisotropy were already confirmed experimentally. However, it has also been predicted 15 years ago that at low enough fields, the spin-orbit interaction is replaced by the coupling to the nuclear spins, where the relaxation becomes isotropic, and the scaling changes to T1 ∝ B-3. Here, we establish these predictions experimentally, by measuring T1 over an unprecedented range of magnetic fields-made possible by lower temperature-and report a maximum T1 = 57 ± 15 s at the lowest fields, setting a record electron spin lifetime in a nanostructure.

Template-Assisted Scalable Nanowire Networks

Topological qubits based on Majorana Fermions have the potential to revolutionize the emerging field of quantum computing by making information processing significantly more robust to decoherence. Nanowires are a promising medium for hosting these kinds of qubits, though branched nanowires are needed to perform qubit manipulations. Here we report a gold-free templated growth of III-V nanowires by molecular beam epitaxy using an approach that enables patternable and highly regular branched nanowire arrays on a far greater scale than what has been reported thus far. Our approach relies on the lattice-mismatched growth of InAs on top of defect-free GaAs nanomembranes yielding laterally oriented, low-defect InAs and InGaAs nanowires whose shapes are determined by surface and strain energy minimization. By controlling nanomembrane width and growth time, we demonstrate the formation of compositionally graded nanowires with cross-sections less than 50 nm. Scaling the nanowires below 20 nm leads to the formation of homogeneous InGaAs nanowires, which exhibit phase-coherent, quasi-1D quantum transport as shown by magnetoconductance measurements. These results are an important advance toward scalable topological quantum computing.

Magnetic cooling for microkelvin nanoelectronics on a cryofree platform

We present a parallel network of 16 demagnetization refrigerators mounted on a cryofree dilution refrigerator aimed to cool nanoelectronic devices to sub-millikelvin temperatures. To measure the refrigerator temperature, the thermal motion of electrons in a Ag wire-thermalized by a spot-weld to one of the Cu nuclear refrigerators-is inductively picked-up by a superconducting gradiometer and amplified by a SQUID mounted at 4 K. The noise thermometer as well as other thermometers are used to characterize the performance of the system, finding magnetic field independent heat-leaks of a few nW/mol, cold times of several days below 1 mK, and a lowest temperature of 150 μK of one of the nuclear stages in a final field of 80 mT, close to the intrinsic SQUID noise of about 100 μK. A simple thermal model of the system capturing the nuclear refrigerator, heat leaks, and thermal and Korringa links describes the main features very well, including rather high refrigerator efficiencies typically above 80%.

Intrinsic Metastabilities in the Charge Configuration of a Double Quantum Dot

We report a thermally activated metastability in a GaAs double quantum dot exhibiting real-time charge switching in diamond shaped regions of the charge stability diagram. Accidental charge traps and sensor backaction are excluded as the origin of the switching. We present an extension of the canonical double dot theory based on an intrinsic, thermal electron exchange process through the reservoirs, giving excellent agreement with the experiment. The electron spin is randomized by the exchange process, thus facilitating fast, gate-controlled spin initialization. At the same time, this process sets an intrinsic upper limit to the spin relaxation time.

Possible evidence for helical nuclear spin order in GaAs quantum wires

We present transport measurements of cleaved edge overgrowth GaAs quantum wires. The conductance of the first mode reaches 2e(2)/h at high temperatures T≳10 K, as expected. As T is lowered, the conductance is gradually reduced to 1e(2)/h, becoming T independent at T≲0.1 K, while the device cools far below 0.1 K. This behavior is seen in several wires, is independent of density, and not altered by moderate magnetic fields B. The conductance reduction by a factor of 2 suggests lifting of the electron spin degeneracy in the absence of B. Our results are consistent with theoretical predictions for helical nuclear magnetism in the Luttinger liquid regime.

Pure hydrogen low-temperature plasma exposure of HOPG and graphene: Graphane formation?

Single- and multilayer graphene and highly ordered pyrolytic graphite (HOPG) were exposed to a pure hydrogen low-temperature plasma (LTP). Characterizations include various experimental techniques such as photoelectron spectroscopy, Raman spectroscopy and scanning probe microscopy. Our photoemission measurement shows that hydrogen LTP exposed HOPG has a diamond-like valence-band structure, which suggests double-sided hydrogenation. With the scanning tunneling microscopy technique, various atomic-scale charge-density patterns were observed, which may be associated with different C-H conformers. Hydrogen-LTP-exposed graphene on SiO(2) has a Raman spectrum in which the D peak to G peak ratio is over 4, associated with hydrogenation on both sides. A very low defect density was observed in the scanning probe microscopy measurements, which enables a reverse transformation to graphene. Hydrogen-LTP-exposed HOPG possesses a high thermal stability, and therefore, this transformation requires annealing at over 1000 °C.

Breakdown of the Korringa law of nuclear spin relaxation in metallic GaAs

We present nuclear spin relaxation measurements in GaAs epilayers using a new pump-probe technique in all-electrical, lateral spin-valve devices. The measured T(1) times agree very well with NMR data available for T>1 K. However, the nuclear spin relaxation rate clearly deviates from the well-established Korringa law expected in metallic samples and follows a sublinear temperature dependence T(1)(-1) is proportional to T(0.6) for 0.1 K≤T≤10 K. Further, we investigate nuclear spin inhomogeneities.

Metallic Coulomb blockade thermometry down to 10 mK and below

We present an improved nuclear refrigerator reaching 0.3 mK, aimed at microkelvin nanoelectronic experiments, and use it to investigate metallic Coulomb blockade thermometers (CBTs) with various resistances R. The high-R devices cool to slightly lower T, consistent with better isolation from the noise environment, and exhibit electron-phonon cooling [proportional] T(5) and a residual heat-leak of 40 aW. In contrast, the low-R CBTs display cooling with a clearly weaker T-dependence, deviating from the electron-phonon mechanism. The CBTs agree excellently with the refrigerator temperature above 20 mK and reach a minimum-T of 7.5 ± 0.2 mK.

Method for cooling nanostructures to microkelvin temperatures

We propose a new scheme aimed at cooling nanostructures to microkelvin temperature based on the well established technique of adiabatic nuclear demagnetization: we attach each device measurement lead to an individual nuclear refrigerator, allowing efficient thermal contact to a microkelvin bath. On a prototype consisting of a parallel network of nuclear refrigerators, temperatures of ∼1 mK simultaneously on ten measurement leads have been reached upon demagnetization, thus completing the first steps toward ultracold nanostructures.

Electrical control of spin relaxation in a quantum dot

We demonstrate electrical control of the spin relaxation time T1 between Zeeman-split spin states of a single electron in a lateral quantum dot. We find that relaxation is mediated by the spin-orbit interaction, and by manipulating the orbital states of the dot using gate voltages we vary the relaxation rate W identical withT1(-1) by over an order of magnitude. The dependence of W on orbital confinement agrees with theoretical predictions, and from these data we extract the spin-orbit length. We also measure the dependence of W on the magnetic field and demonstrate that spin-orbit mediated coupling to phonons is the dominant relaxation mechanism down to 1 T, where T1 exceeds 1 s.

Energy-dependent tunneling in a quantum dot

We present measurements of the rates for an electron to tunnel on and off a quantum dot, obtained using a quantum point contact charge sensor. The tunnel rates show exponential dependence on drain-source bias and plunger gate voltages. The tunneling process is shown to be elastic, and a model describing tunneling in terms of the dot energy relative to the height of the tunnel barrier quantitatively describes the measurements.

Asymmetry of nonlinear transport and electron interactions in quantum dots

The symmetry properties of transport beyond the linear regime in chaotic quantum dots are investigated experimentally. A component of differential conductance that is antisymmetric in both applied source-drain bias V and magnetic field B, absent in linear transport, is found to exhibit mesoscopic fluctuations around a zero average. Typical values of this component allow a measurement of the electron interaction strength.

Cotunneling spectroscopy in few-electron quantum dots

Few-electron quantum dots are investigated in the regime of strong tunneling to the leads. Inelastic cotunneling is used to measure the two-electron singlet-triplet splitting above and below a magnetic field driven singlet-triplet transition. Evidence for a nonequilibrium two-electron singlet-triplet Kondo effect is presented. Cotunneling allows orbital correlations and parameters characterizing entanglement of the two-electron singlet ground state to be extracted from dc transport.

Gate-controlled spin-orbit quantum interference effects in lateral transport

In situ control of spin-orbit coupling in coherent transport using a clean GaAs/AlGaAs two-dimensional electron gas is realized, leading to a gate-tunable crossover from weak localization to antilocalization. The necessary theory of 2D magnetotransport in the presence of spin-orbit coupling beyond the diffusive approximation is developed and used to analyze experimental data. With this theory the Rashba contribution and linear and cubic Dresselhaus contributions to spin-orbit coupling are separately estimated, allowing the angular dependence of spin-orbit precession to be extracted at various gate voltages.

Spin-orbit coupling, antilocalization, and parallel magnetic fields in quantum dots

We investigate antilocalization due to spin-orbit coupling in ballistic GaAs quantum dots. Antilocalization that is prominent in large dots is suppressed in small dots, as anticipated theoretically. Parallel magnetic fields suppress both antilocalization and also, at larger fields, weak localization, consistent with random matrix theory results once orbital coupling of the parallel field is included. In situ control of spin-orbit coupling in dots is demonstrated as a gate-controlled crossover from weak localization to antilocalization.