Spectral Signatures of a Negative Polaron in a Doped Polymer Semiconductor: Energy Levels and Hubbard U Interactions

The modern picture of negative charge carriers on conjugated polymers invokes the formation of a singly occupied (spin-up/spin-down) level within the polymer gap and a corresponding unoccupied level above the polymer conduction band edge. The energy splitting between these sublevels is related to on-site Coulomb interactions between electrons, commonly termed Hubbard U. However, spectral evidence for both sublevels and experimental access to the U value is still missing. Here, we provide evidence by n-doping the polymer P(NDI2OD-T₂) with [RhCp*Cp]₂, [N-DMBI]₂, and cesium. Changes in the electronic structure after doping are studied with ultraviolet photoelectron and low-energy inverse photoemission spectroscopies (UPS, LEIPES). UPS data show an additional density of states (DOS) in the former empty polymer gap while LEIPES data show an additional DOS above the conduction band edge. These DOS are assigned to the singly occupied and unoccupied sublevels, allowing determination of a U value of ∼1 eV.

Synthesis, structures, and reactivity of isomers of [RuCp*(1,4-(Me2N)2C6H4)]2

[RuCp*(1,3,5-R₃C₆H₃)]₂ {Cp* = η⁵-pentamethylcyclopentadienyl, R = Me, Et} have previously been found to be moderately air stable, yet highly reducing, with estimated D⁺/0.5D₂ (where D₂ and D⁺ represent the dimer and the corresponding monomeric cation, respectively) redox potentials of ca. -2.0 V vs. FeCp₂^+/0. These properties have led to their use as n-dopants for organic semiconductors. Use of arenes substituted with π-electron donors is anticipated to lead to even more strongly reducing dimers. [RuCp*(1-(Me₂N)-3,5-Me₂C₆H₃)]⁺PF₆^- and [RuCp*(1,4-(Me₂N)₂C₆H₄)]⁺PF₆^- have been synthesized and electrochemically and crystallographically characterized; both exhibit D⁺/D potentials slightly more cathodic than [RuCp*(1,3,5-R₃C₆H₃)]⁺. Reduction of [RuCp*(1,4-(Me₂N)₂C₆H₄)]⁺PF₆^- using silica-supported sodium-potassium alloy leads to a mixture of isomers of [RuCp*(1,4-(Me₂N)₂C₆H₄)]₂, two of which have been crystallographically characterized. One of these isomers has a similar molecular structure to [RuCp*(1,3,5-Et₃C₆H₃)]₂; the central C-C bond is exo,exo, i.e., on the opposite face of both six-membered rings from the metals. A D⁺/0.5D₂ potential of -2.4 V is estimated for this exo,exo dimer, more reducing than that of [RuCp*(1,3,5-R₃C₆H₃)]₂ (-2.0 V). This isomer reacts much more rapidly with both air and electron acceptors than [RuCp*(1,3,5-R₃C₆H₃)]₂ due to a much more cathodic D₂˙⁺/D₂ potential. The other isomer to be crystallographically characterized, along with a third isomer, are both dimerized in an exo,endo fashion, representing the first examples of such dimers. Density functional theory calculations and reactivity studies indicate that the central bonds of these two isomers are weaker than those of the exo,exo isomer, or of [RuCp*(1,3,5-R₃C₆H₃)]₂, leading to estimated D⁺/0.5D₂ potentials of -2.5 and -2.6 V vs. FeCp₂^+/0. At the same time the D₂˙⁺/D₂ potentials for the exo,endo dimers are anodically shifted relative to those of [RuCp*(1,3,5-R₃C₆H₃)]₂, resulting in much greater air stability than for the exo,exo isomer.

Controllable, Wide-Ranging n-Doping and p-Doping of Monolayer Group 6 Transition-Metal Disulfides and Diselenides

Developing processes to controllably dope transition-metal dichalcogenides (TMDs) is critical for optical and electrical applications. Here, molecular reductants and oxidants are introduced onto monolayer TMDs, specifically MoS2 , WS2 , MoSe2 , and WSe2 . Doping is achieved by exposing the TMD surface to solutions of pentamethylrhodocene dimer as the reductant (n-dopant) and "Magic Blue," [N(C6 H4 -p-Br)3 ]SbCl6 , as the oxidant (p-dopant). Current-voltage characteristics of field-effect transistors show that, regardless of their initial transport behavior, all four TMDs can be used in either p- or n-channel devices when appropriately doped. The extent of doping can be controlled by varying the concentration of dopant solutions and treatment time, and, in some cases, both nondegenerate and degenerate regimes are accessible. For all four TMD materials, the photoluminescence intensity; for all four materials the PL intensity is enhanced with p-doping but reduced with n-doping. Raman and X-ray photoelectron spectroscopy (XPS) also provide insight into the underlying physical mechanism by which the molecular dopants react with the monolayer. Estimates of changes of carrier density from electrical, PL, and XPS results are compared. Overall a simple and effective route to tailor the electrical and optical properties of TMDs is demonstrated.

Corrigendum: Beating the thermodynamic limit with photo-activation of n-doping in organic semiconductors

This corrects the article DOI: 10.1038/nmat5027.

Beating the thermodynamic limit with photo-activation of n-doping in organic semiconductors

Chemical doping of organic semiconductors using molecular dopants plays a key role in the fabrication of efficient organic electronic devices. Although a variety of stable molecular p-dopants have been developed and successfully deployed in devices in the past decade, air-stable molecular n-dopants suitable for materials with low electron affinity are still elusive. Here we demonstrate that photo-activation of a cleavable air-stable dimeric dopant can result in kinetically stable and efficient n-doping of host semiconductors, whose reduction potentials are beyond the thermodynamic reach of the dimer's effective reducing strength. Electron-transport layers doped in this manner are used to fabricate high-efficiency organic light-emitting diodes. Our strategy thus enables a new paradigm for using air-stable molecular dopants to improve conductivity in, and provide ohmic contacts to, organic semiconductors with very low electron affinity.

Controlled n-Type Doping of Carbon Nanotube Transistors by an Organorhodium Dimer

Single-walled carbon nanotube (SWCNT) transistors are among the most developed nanoelectronic devices for high-performance computing applications. While p-type SWCNT transistors are easily achieved through adventitious adsorption of atmospheric oxygen, n-type SWCNT transistors require extrinsic doping schemes. Existing n-type doping strategies for SWCNT transistors suffer from one or more issues including environmental instability, limited carrier concentration modulation, undesirable threshold voltage control, and/or poor morphology. In particular, commonly employed benzyl viologen n-type doping layers possess large thicknesses, which preclude top-gate transistor designs that underlie high-density integrated circuit layouts. To overcome these limitations, we report here the controlled n-type doping of SWCNT thin-film transistors with a solution-processed pentamethylrhodocene dimer. The charge transport properties of organorhodium-treated SWCNT thin films show consistent n-type behavior when characterized in both Hall effect and thin-film transistor geometries. Due to the molecular-scale thickness of the organorhodium adlayer, large-area arrays of top-gated, n-type SWCNT transistors are fabricated with high yield. This work will thus facilitate ongoing efforts to realize high-density SWCNT integrated circuits.

Efficient light emission from inorganic and organic semiconductor hybrid structures by energy-level tuning

The fundamental limits of inorganic semiconductors for light emitting applications, such as holographic displays, biomedical imaging and ultrafast data processing and communication, might be overcome by hybridization with their organic counterparts, which feature enhanced frequency response and colour range. Innovative hybrid inorganic/organic structures exploit efficient electrical injection and high excitation density of inorganic semiconductors and subsequent energy transfer to the organic semiconductor, provided that the radiative emission yield is high. An inherent obstacle to that end is the unfavourable energy level offset at hybrid inorganic/organic structures, which rather facilitates charge transfer that quenches light emission. Here, we introduce a technologically relevant method to optimize the hybrid structure's energy levels, here comprising ZnO and a tailored ladder-type oligophenylene. The ZnO work function is substantially lowered with an organometallic donor monolayer, aligning the frontier levels of the inorganic and organic semiconductors. This increases the hybrid structure's radiative emission yield sevenfold, validating the relevance of our approach.

Organometallic dimers: application to work-function reduction of conducting oxides

The dimers of pentamethyliridocene and ruthenium pentamethylcyclopentadienyl mesitylene, (IrCp*Cp)2 and (RuCp*mes)2, respectively, are shown here to be effective solution-processable reagents for lowering the work functions of electrode materials; this approach is compared to the use of solution-deposited films of ethoxylated poly(ethylenimine) (PEIE). The work functions of indium tin oxide (ITO), zinc oxide, and gold electrodes can be reduced to 3.3-3.4 eV by immersion in a toluene solution of (IrCp*Cp)2; these values are similar to those that can be obtained by spin-coating a thin layer of PEIE onto the electrodes. The work-function reductions achieved using (IrCp*Cp)2 are primarily attributable to the interface dipoles associated with the formation of submonolayers of IrCp*Cp(+) cations on negatively charged substrates, which in turn result from redox reactions between the dimer and the electrode. The electrical properties of C60 diodes with dimer-modified ITO cathodes are similar to those of analogous devices with PEIE-modified ITO cathodes.

Dominance and crypticity of T cell antigenic determinants

In this review, we first consider the inherent structural constraints for binding of a peptide to MHC class II molecules. Such parameters at the site of TCR recognition are dependent upon the efficient generation of the antigenic determinant during natural processing of the whole protein antigen. Strikingly, only a minor fraction of such potential determinants on an antigen are presented in an immunodominant manner, while the remaining peptides are silent (cryptic). Why one determinant is selected while the majority are neglected is still unresolved, but we review the experimental evidence pertaining to this choice. Thus, features of the antigen remote from the actual determinant can either steer processing toward disclosure or revelation of a determinant, or interfere with the binding of peptides to MHC (hinderotopy). The evidence is reviewed for "MHC-guided processing," where the unfolding antigen binds at an early stage to an MHC molecule through its most available and affine agretope and then is trimmed down to final size, while the rest of the molecule, including cryptic determinants, is discarded. Different MHC molecules can compete for determinants at an early stage of processing when the antigen is close to its original length. There are shifts in the hierarchy of display of dominant and cryptic determinants, and these shifts relate to local inflammatory states, to changes in the state or composition of the APC population, and to aspects of exogenous vs endogenous processing. The impact of this differential display of determinants on tolerance and autoimmunity is discussed.

An experimental study on the effect of nifedipine on ischaemic skin flap survival in rats

Vasodilators have been employed previously in an attempt to improve survival of ischaemic rat skin flaps. The effect of nifedipine, a calcium channel blocker, on skin flap survival was studied using a standard experimental rat model. The control group had a mean flap necrosis of 37.009%. Rats treated by nifedipine starting 1 day preoperatively and continued for 1 week postoperatively had a mean necrosis of 10.0953%. Rats treated by nifedipine started postoperatively and continued for 1 week had a mean flap necrosis of 12.289%. Treated groups had significantly lower flap necrosis in comparison to untreated controls. There was no significant difference in flap necrosis between the two treated groups. This study shows that nifedipine improves survival in standard ischaemic rat skin flaps.