Stereolithography of Semiconductor Silver and Acrylic-Based Nanocomposites

Polymer nanocomposites (PNCs) attract the attention of researchers and industry because of their potential properties in widespread fields. Specifically, electrically conductive and semiconductor PNCs are gaining interest as promising materials for biomedical, optoelectronic and sensing applications, among others. Here, metallic nanoparticles (NPs) are extensively used as nanoadditives to increase the electrical conductivity of mere acrylic resin. As the in situ formation of metallic NPs within the acrylic matrix is hindered by the solubility of the NP precursors, we propose a method to increase the density of Ag NPs by using different intermediate solvents, allowing preparation of Ag/acrylic resin nanocomposites with improved electrical behaviour. We fabricated 3D structures using stereolithography (SLA) by dissolving different quantities of metal precursor (AgClO₄) in methanol and in N,N-dimethylformamide (DMF) and adding these solutions to the acrylic resin. The high density of Ag NPs obtained notably increases the electrical conductivity of the nanocomposites, reaching the semiconductor regime. We analysed the effect of the auxiliary solvents during the printing process and the implications on the mechanical properties and the degree of cure of the fabricated nanocomposites. The good quality of the materials prepared by this method turn these nanocomposites into promising candidates for electronic applications.

Comparison of the Material Quality of AlxIn1-xN (x-0-0.50) Films Deposited on Si(100) and Si(111) at Low Temperature by Reactive RF Sputtering

Al_xIn_1-xN ternary semiconductors have attracted much interest for application in photovoltaic devices. Here, we compare the material quality of Al_xIn_1-xN layers deposited on Si with different crystallographic orientations, (100) and (111), via radio-frequency (RF) sputtering. To modulate their Al content, the Al RF power was varied from 0 to 225 W, whereas the In RF power and deposition temperature were fixed at 30 W and 300 °C, respectively. X-ray diffraction measurements reveal a c-axis-oriented wurtzite structure with no phase separation regardless of the Al content (x = 0-0.50), which increases with the Al power supply. The surface morphology of the Al_xIn_1-xN layers improves with increasing Al content (the root-mean-square roughness decreases from ≈12 to 2.5 nm), and it is similar for samples grown on both Si substrates. The amorphous layer (~2.5 nm thick) found at the interface with the substrates explains the weak influence of their orientation on the properties of the Al_xIn_1-xN films. Simultaneously grown Al_xIn_1-xN-on-sapphire samples point to a residual n-type carrier concentration in the 10²⁰-10²¹ cm^-3 range. The optical band gap energy of these layers evolves from 1.75 to 2.56 eV with the increase in the Al. PL measurements of Al_xIn_1-xN show a blue shift in the peak emission when adding the Al, as expected. We also observe an increase in the FWHM of the main peak and a decrease in the integrated emission with the Al content in room-temperature PL measurements. In general, the material quality of the Al_xIn_1-xN films on Si is similar for both crystallographic orientations.

Self-Assembly of CsPbBr3 Perovskites in Micropatterned Polymeric Surfaces: Toward Luminescent Materials with Self-Cleaning Properties

In this work, we present a series of porous, honeycomb-patterned polymer films containing CsPbBr₃ perovskite nanocrystals as light emitters prepared by the breath figure approach. Microscopy analysis of the topography and composition of the material evidence that the CsPbBr₃ nanocrystals are homogeneously distributed within the polymer matrix but preferably confined inside the pores due to the fabrication process. The optical properties of the CsPbBr₃ nanocrystals remain unaltered after the film formation, proving that they are stable inside the polystyrene matrix, which protects them from degradation by environmental factors. Moreover, these surfaces present highly hydrophobic behavior due to their high porosity and defined micropatterning, which is in agreement with the Cassie-Baxter model. This is evidenced by performing a proof-of-concept coating on top of 3D-printed LED lenses, conferring the material with self-cleaning properties, while the CsPbBr₃ nanocrystals embedded inside the polymeric matrix maintain their luminescent behavior.

Structural Characterization of Al0.37In0.63N/AlN/p-Si (111) Heterojunctions Grown by RF Sputtering for Solar Cell Applications

Compact Al_0.37In_0.63N layers were grown by radiofrequency sputtering on bare and 15 nm-thick AlN-buffered Si (111) substrates. The crystalline quality of the AlInN layers was studied by high-resolution X-ray diffraction measurements and transmission electron microscopy. Both techniques show an improvement of the structural properties when the AlInN layer is grown on a 15 nm-thick AlN buffer. The layer grown on bare silicon exhibits a thin amorphous interfacial layer between the substrate and the AlInN, which is not present in the layer grown on the AlN buffer layer. A reduction of the density of defects is also observed in the layer grown on the AlN buffer.

Purcell Enhancement and Wavelength Shift of Emitted Light by CsPbI3 Perovskite Nanocrystals Coupled to Hyperbolic Metamaterials

Manipulation of the exciton emission rate in nanocrystals of lead halide perovskites (LHPs) was demonstrated by means of coupling of excitons with a hyperbolic metamaterial (HMM) consisting of alternating thin metal (Ag) and dielectric (LiF) layers. Such a coupling is found to induce an increase of the exciton radiative recombination rate by more than a factor of three due to the Purcell effect when the distance between the quantum emitter and HMM is nominally as small as 10 nm, which coincides well with the results of our theoretical analysis. Besides, an effect of the coupling-induced long wavelength shift of the exciton emission spectrum is detected and modeled. These results can be of interest for quantum information applications of single emitters on the basis of perovskite nanocrystals with high photon emission rates.

High Spatial Resolution Mapping of Localized Surface Plasmon Resonances in Single Gallium Nanoparticles

Plasmonics has emerged as an attractive field driving the development of optical systems in order to control and exploit light-matter interactions. The increasing interest around plasmonic systems is pushing the research of alternative plasmonic materials, spreading the operability range from IR to UV. Within this context, gallium appears as an ideal candidate, potentially active within a broad spectral range (UV-VIS-IR), whose optical properties are scarcely reported. Importantly, the smart design of active plasmonic materials requires their characterization at high spatial and spectral resolution to access the optical fingerprint of individual nanostructures, attainable by transmission electron microscopy techniques (i.e., by means of electron energy-loss spectroscopy, EELS). Therefore, the optical response of individual Ga nanoparticles (NPs) by means of EELS measurements is analyzed, in order to spread the understanding of the plasmonic response of Ga NPs. The results show that single Ga NPs may support several plasmon modes, whose nature is extensively discussed.

The Role of Polarity in Nonplanar Semiconductor Nanostructures

The lack of mirror symmetry in binary semiconductor compounds turns them into polar materials, where two opposite orientations of the same crystallographic direction are possible. Interestingly, their physical properties (e.g., electronic or photonic) and morphological features (e.g., shape, growth direction, and so forth) also strongly depend on the polarity. It has been observed that nanoscale materials tend to grow with a specific polarity, which can eventually be reversed for very specific growth conditions. In addition, polar-directed growth affects the defect density and topology and might induce eventually the formation of undesirable polarity inversion domains in the nanostructure, which in turn will affect the photonic and electronic final device performance. Here, we present a review on the polarity-driven growth mechanism at the nanoscale, combining our latest investigation with an overview of the available literature highlighting suitable future possibilities of polarity engineering of semiconductor nanostructures. The present study has been extended over a wide range of semiconductor compounds, covering the most commonly synthesized III-V (GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb) and II-VI (ZnO, ZnTe, CdS, CdSe, CdTe) nanowires and other free-standing nanostructures (tripods, tetrapods, belts, and membranes). This systematic study allowed us to explore the parameters that may induce polarity-dependent and polarity-driven growth mechanisms, as well as the polarity-related consequences on the physical properties of the nanostructures.

Surface Hydrogen Enables Subeutectic Vapor-Liquid-Solid Semiconductor Nanowire Growth

Vapor-liquid-solid nanowire growth below the bulk metal-semiconductor eutectic temperature is known for several systems; however, the fundamental processes that govern this behavior are poorly understood. Here, we show that hydrogen atoms adsorbed on the Ge nanowire sidewall enable AuGe catalyst supercooling and control Au transport. Our approach combines in situ infrared spectroscopy to directly and quantitatively determine hydrogen atom coverage with a "regrowth" step that allows catalyst phase to be determined with ex situ electron microscopy. Maintenance of a supercooled catalyst with only hydrogen radical delivery confirms the centrality of sidewall chemistry. This work underscores the importance of the nanowire sidewall and its chemistry on catalyst state, identifies new methods to regulate catalyst composition, and provides synthetic strategies for subeutectic growth in other nanowire systems.

Twin-Induced InSb Nanosails: A Convenient High Mobility Quantum System

Ultra narrow bandgap III-V semiconductor nanomaterials provide a unique platform for realizing advanced nanoelectronics, thermoelectrics, infrared photodetection, and quantum transport physics. In this work we employ molecular beam epitaxy to synthesize novel nanosheet-like InSb nanostructures exhibiting superior electronic performance. Through careful morphological and crystallographic characterization we show how this unique geometry is the result of a single twinning event in an otherwise pure zinc blende structure. Four-terminal electrical measurements performed in both the Hall and van der Pauw configurations reveal a room temperature electron mobility greater than 12,000 cm(2)·V(-1)·s(-1). Quantized conductance in a quantum point contact processed with a split-gate configuration is also demonstrated. We thus introduce InSb "nanosails" as a versatile and convenient platform for realizing new device and physics experiments with a strong interplay between electronic and spin degrees of freedom.

Position-controlled growth of GaN nanowires and nanotubes on diamond by molecular beam epitaxy

In this work the position-controlled growth of GaN nanowires (NWs) on diamond by means of molecular beam epitaxy is investigated. In terms of growth, diamond can be seen as a model substrate, providing information of systematic relevance also for other substrates. Thin Ti masks are structured by electron beam lithography which allows the fabrication of perfectly homogeneous GaN NW arrays with different diameters and distances. While the wurtzite NWs are found to be Ga-polar, N-polar nucleation leads to the formation of tripod structures with a zinc-blende core which can be efficiently suppressed above a substrate temperature of 870 °C. A variation of the III/V flux ratio reveals that both axial and radial growth rates are N-limited despite the globally N-rich growth conditions, which is explained by the different diffusion behavior of Ga and N atoms. Furthermore, it is shown that the hole arrangement has no effect on the selectivity but can be used to force a transition from nanowire to nanotube growth by employing a highly competitive growth regime.

Atomic scale strain relaxation in axial semiconductor III-V nanowire heterostructures

Combination of mismatched materials in semiconductor nanowire heterostructures offers a freedom of bandstructure engineering that is impossible in standard planar epitaxy. Nevertheless, the presence of strain and structural defects directly control the optoelectronic properties of these nanomaterials. Understanding with atomic accuracy how mismatched heterostructures release or accommodate strain, therefore, is highly desirable. By using atomic resolution high angle annular dark field scanning transmission electron microscopy combined with geometrical phase analyses and computer simulations, we are able to establish the relaxation mechanisms (including both elastic and plastic deformations) to release the mismatch strain in axial nanowire heterostructures. Formation of misfit dislocations, diffusion of atomic species, polarity transfer, and induced structural transformations are studied with atomic resolution at the intermediate ternary interfaces. Two nanowire heterostructure systems with promising applications (InAs/InSb and GaAs/GaSb) have been selected as key examples.

Solution phase van der Waals epitaxy of ZnO wire arrays

As an incommensurate epitaxy, van der Waals epitaxy allows defect-free crystals to grow on substrates even with a large lattice mismatch. Furthermore, van der Waals epitaxy is proposed as a universal platform where heteroepitaxy can be achieved irrespective of the nature of the overlayer material and the method of crystallization. Here we demonstrate van der Waals epitaxy in solution phase synthesis for seedless and catalyst-free growth of ZnO wire arrays on phlogopite mica at low temperature. A unique incommensurate interface is observed even with the incomplete initial wetting of ZnO onto the substrate. Interestingly, the imperfect contacting layer does not affect the crystalline and optical properties of other parts of the wires. In addition, we present patterned growth of a well-ordered array with hexagonal facets and in-plane alignment. We expect our seedless and catalyst-free solution phase van der Waals epitaxy synthesis to be widely applicable in other materials and structures.

Highly enhanced exciton recombination rate by strong electron-phonon coupling in single ZnTe nanobelt

Electron-phonon coupling plays a key role in a variety of elemental excitations and their interactions in semiconductor nanostructures. Here we demonstrate that the relaxation rate of free excitons in a single ZnTe nanobelt (NB) is considerably enhanced via a nonthermalized hot-exciton emission process as a result of an ultrastrong electron-phonon coupling. Using time-resolved photoluminescence (PL) spectroscopy and resonant Raman spectroscopy (RRS), we present a comprehensive study on the identification and the dynamics of free/bound exciton recombination and the electron-phonon interactions in crystalline ZnTe NBs. Up to tenth-order longitudinal optical (LO) phonons are observed in Raman spectroscopy, indicating an ultrastrong electron-phonon coupling strength. Temperature-dependent PL and RRS spectra suggest that electron-phonon coupling is mainly contributed from Light hole (LH) free excitons. With the presence of hot-exciton emission, two time constants (∼80 and ∼18 ps) are found in photoluminescence decay curves, which are much faster than those in many typical semiconductor nanostructures. Finally we prove that under high excitation power amplified spontaneous emission (ASE) originating from the electron-hole plasma occurs, thereby opening another radiative decay channel with an ultrashort lifetime of few picoseconds.