Anomalous Hall effect in Nd-doped Bi1.1Sb0.9STe2 topological insulator single crystals

Topological insulators are emerging materials with insulating bulk and symmetry protected nontrivial surface states. One of the most fascinating transport behaviors in a topological insulator is the quantum anomalous Hall effect, which has been observed in magnetic-topological-insulator-based devices. In this work, we report successful doping of rare-earth element Nd into Bi1.1Sb0.9STe2 bulk-insulating topological insulator single crystals, in which the Nd moments are ferromagnetically ordered at ∼100 K. Benefiting from the in-bulk-gap Fermi level, electronic transport behaviors dominated by the topological surface states are observed in the ferromagnetic region. At low temperatures, strong Shubnikov-de Haas oscillations with a nontrivial Berry phase are observed. The topological insulator with long range magnetic ordering in Nd-doped Bi1.1Sb0.9STe2 single crystals provides a good platform for quantum transport studies and spintronic applications.

The developments of cyan emitting phosphors to fulfill the cyan emission gap of white-LEDs

Future generations of solid-state lighting (SSL) will prioritize the development of innovative luminescent materials with superior characteristics. The phosphors converted into white light-emitting diodes (white LEDs) often have a blue-green cavity. Cyan-emitting phosphor fills the spectral gap and produces "full-visible-spectrum lighting." Full-visible spectrum lighting is beneficial for several purposes, such as light therapy, plant growth, and promoting an active and healthy lifestyle. The design of cyan garnet-type phosphors, like Ca2LuHf2Al3O12 (CLHAO), has recently been the subject of interest. This review study reports a useful cyan-emitting phosphor based on CLHAO composition with a garnet structure to have a cyan-to-green emitting color with good energy transfer. It could be employed as cyan filler in warm-white LED manufacturing. Due to its stability, ability to dope with various ions suitable for their desired qualities, and ease of synthesis, this garnet-like compound is a great host material for rare-earth ions. The development of CLHAO cyan-emitting phosphors has exceptionally high luminescence, resulting in high CRI and warm-white LEDs, making them a viable desire for LED manufacturing. The development of CLHAO cyan-emitting phosphors with diverse synthesis techniques, along with their properties and applications in white LEDs, are extensively covered in this review paper.

High-mobility spin-polarized two-dimensional electron gas at the interface of EuTiO3/SrTiO3heterostructures

Spin polarization of two-dimensional electron gas (2DEG) at the interface of EuTiO3/SrTiO3(STO) heterostructures has been theoretical predicted and experimentally observed via x-ray magnetic circular dichroism and polarized x-ray absorption spectroscopy, which, however, is lack of magnetotransport evidence. Here, we report the fabrication of high-quality EuTiO3/STO heterostructures by depositing antiferromagnetic insulating EuTiO3thin films onto STO substrates. Shubnikov-de Haas oscillation, Hall, and magnetoresistance (MR) measurements show that the interface is not only highly conducting, with electron mobility up to5.5×103cm2V-1s-1at 1.8 K, but also shows low-field hysteretic MR effects. MR of ∼9% is observed at 1.8 K and 20 Oe, which is one order of magnitude higher than those observed in other spin-polarized 2DEG oxide systems. Moreover, the heterostructures show ferromagnetic hysteresis loops. These results demonstrate that the high-mobility 2DEG is spin polarized, whose origin is attributed to the interfacial Ti3+-3dstates due to oxygen deficiency and the exchange interactions between interfacial Eu spins and itinerant Ti-3delectrons.

Coexistence of logarithmic and SdH quantum oscillations in ferromagnetic Cr-doped tellurium single crystals

We report the synthesis of transition-metal-doped ferromagnetic elemental single-crystal semiconductors with quantum oscillations using the physical vapor transport method. The 7.7 atom% Cr-doped Te crystals (Cr:Te) show ferromagnetism, butterfly-like negative magnetoresistance in the low temperature (<3.8 K) and low field (<0.15 T) region, and high Hall mobility, e.g. 1320 cm²V^-1s^-1at 30 K and 350 cm²V^-1s^-1at 300 K, implying that Cr:Te crystals are ferromagnetic elemental semiconductors. WhenB// [001] // I, the maximum negative MR is ∼-27% atT= 20 K andB= 8 T. In the low temperature semiconducting region, Cr:Te crystals show strong discrete scale invariance dominated logarithmic quantum oscillations when the direction of the magnetic fieldBis parallel to the [100] crystallographic direction (B// [100]) and show Landau quantization dominated Shubnikov-de Haas oscillations forB// [210] direction, which suggests the broken rotation symmetry of the Fermi pockets in the Cr:Te crystals. The findings of coexistence of multiple quantum oscillations and ferromagnetism in such an elemental quantum material may inspire more study of narrow bandgap semiconductors with ferromagnetism and quantum phenomena.

Correction: Magnetotransport and magnetic properties of Cr-modified Mn2Sb epitaxial thin films

Correction for 'Magnetotransport and magnetic properties of Cr-modified Mn₂Sb epitaxial thin films' by Ting-Wei Chen et al., Phys. Chem. Chem. Phys., 2023, 25, 5785-5794, https://doi.org/10.1039/D2CP05442F.

Magnetotransport and magnetic properties of Cr-modified Mn2Sb epitaxial thin films

High-quality Mn_2-xCr_xSb (x = 0.01, 0.04, and 0.1) epitaxial thin films were grown on SrTiO₃ (STO) (001) single-crystal substrates using molecular beam epitaxy. Magnetotransport and magnetic measurements reveal that the x = 0.01 sample undergoes a quasi-ferrimagnetic (I) [Q-FIM(I)]-to-ferrimagnetic (II) [FIM(II)] spin reorientation (SR) transition and a giant magnetoresistance (MR) associated first-order ferrimagnetic(II)-to-antiferromagnetic (AFM) phase transition upon cooling, resulting in the AFM ground state with a weak in-plane net moment. Upon increasing the doping level from x = 0.01 to 0.1, both the SR transition and the first-order magnetic transition are suppressed. For x = 0.1, the former transition is suppressed, leaving only the Q-FIM(I)-to-AFM transition within the whole temperature region. T_AFM-FIM shows almost similar changes upon the application of either in-plane or out-of-plane magnetic fields. T_AFM-FIM values of the x = 0.01 and 0.04 samples are much higher than those of the Mn_2-xCr_xSb bulk with similar doping levels, which can be understood by the clamping effect from STO substrates. For each thin-film sample, the MR effect is observed near T_AFM-FIM and disappears in the high temperature Q-FIM(I) phase and low temperature AFM phase, indicating that MR is related to the spin-dependent electron scattering during the first-order magnetic phase transition. Based on the magnetotransport and magnetic data, a magnetic phase diagram is established for the Mn_2-xCr_xSb films in the low doping level region.

Colossal Magnetoresistance in Ti Lightly Doped Cr2Se3 Single Crystals with a Layered Structure

Stoichiometric Cr₂Se₃ single crystals are particular layer-structured antiferromagnets, which possess a noncollinear spin configuration, weak ferromagnetic moments, moderate magnetoresistance (MR ∼14.3%), and poor metallic conductivity below the antiferromagnetic phase transition. Here, we report an interesting >16 000% colossal magnetoresistance (CMR) effect in Ti (1.5 atomic percent) lightly doped Cr₂Se₃ single crystals. Such a CMR is approximately 1143 times larger than that of the stoichiometric Cr₂Se₃ crystals and is rarely observed in layered antiferromagnets and is attributed to the frustrated spin configuration. Moreover, the Ti doping not only dramatically changes the electronic conductivity of the Cr₂Se₃ crystal from a bad metal to a semiconductor with a gap of ∼15 meV but also induces a change in the magnetic anisotropy of the Cr₂Se₃ crystal from strong out-of-plane to weak in-plane. Further, magnetotransport measurements reveal that the low-field MR scales with the square of the reduced magnetization, which is a signature of CMR materials. The layered Ti:Cr₂Se₃ with the CMR effect could be used as two-dimensional (2D) heterostructure building blocks to provide colossal negative MR in spintronic devices.

Nontrivial Giant Linear Magnetoresistance in Nodal-Line Semimetal ZrGeSe 2D Layers

Linear magnetoresistance (LMR) is usually observed in topological quantum materials and plausibly connected with the topologically nontrivial surface state with Dirac-cone-like linear dispersion because the frequently encountered large Hall resistivity can be trivially mixed into the LMR via charge inhomogeneity. Herein, by applying an optimal gate voltage to nodal-line semimetal ZrGeSe two-dimensional (2D) layers with specific thicknesses, we observe a giant nonsaturated LMR of 8 × 10⁴% at 2 K and a magnetic field of 9 T. This giant LMR is accompanied by a very small Hall resistivity, which is inconsistent with the charge inhomogeneity mechanism. Our systematic results confirm that the giant LMR is maximized when the topological semimetal is in the "even-metal" regime and suppressed upon evolution to the normal "odd-metal" regime. The "even-to-odd" transition is universal regardless of the thicknesses of the crystals. A comparison with Abrikosov's quantum LMR theory indicates that the observed LMR cannot be trivial.

Magnetotransport and magnetic properties of the layered noncollinear antiferromagnetic Cr2Se3single crystals

We report on the growth of high-quality stoichiometric layered Cr2Se3single crystals with metallic and noncollinear antiferromagnetic ground state using the chemical vapor transport (CVT) method. The crystals show weak ferromagnetism in the in-plane and out-of-plane directions below the Neél temperature (TN), however, the field-cooled out-of-plane magnetization at 500 Oe and 10 K (∼0.24μB/f.u.) is approximately 15 times larger than that of the in-plane one, indicating strongc-axis easy uniaxial magnetic anisotropy, which is further supported by the in-plane and out-of-plane isothermal anisotropic magnetic hysteresis loops and the angular dependent magnetoresistance (MR). The latter also reveals a decrease of the coercive field of the crystal upon the tilting of the weak ferromagnetic easy axis away from the direction of the magnetic field. Further, the out-of-plane isothermal MR are negative belowTNand show butterfly shapes forT< 10 K and couple with the magnetic hysteresisM(H) loop. These results may help researchers better understand the interplay between the weak ferromagnetism and the magnetotransport properties of 2D itinerant noncollinear antiferromagnetic systems.

Magnetotransport properties of square-net compounds of NbSiSb and NbGeSb single crystals

We successfully grew single crystals of Si- and Ge-square-net compounds of NbSiSb and NbGeSb whose excellent crystalline quality are verified using single-crystal x-ray diffractionθ-2θscans, rocking curves, scanning and transmission electron microscopies. Since these two compounds share major crystallographic similarity with the topological nodal-line semimetals of ZrSiS family, we employ density functional theory (DFT) calculations and magnetotransport measurements to demonstrate their band structures as well as the electron scattering mechanisms. DFT calculations show that the fermiology displays strong anisotropy from the crystallographicc-axis to theab-plane and weak anisotropy within theabplane, which is consistent with the strong anisotropic magnetotransport behaviors. Following the Kohler's scaling rule we prove that similar interband and intraband electron-phonon scattering mechanisms work in both the NbSiSb and NbGeSb compounds. The study of electronic transport mechanism in the presence of external magnetic field renders deep insight into topological behavior together with its Fermi surface, and the high similarity of crystallography and strong difference in band structures between the present single crystals and that of ZrSiS family provides the possibility to tune the band structure via element doping.

Photoflexoelectric effect in halide perovskites

Harvesting environmental energy to generate electricity is a key scientific and technological endeavour of our time. Photovoltaic conversion and electromechanical transduction are two common energy-harvesting mechanisms based on, respectively, semiconducting junctions and piezoelectric insulators. However, the different material families on which these transduction phenomena are based complicate their integration into single devices. Here we demonstrate that halide perovskites, a family of highly efficient photovoltaic materials^1-3, display a photoflexoelectric effect whereby, under a combination of illumination and oscillation driven by a piezoelectric actuator, they generate orders of magnitude higher flexoelectricity than in the dark. We also show that photoflexoelectricity is not exclusive to halides but a general property of semiconductors that potentially enables simultaneous electromechanical and photovoltaic transduction and harvesting in unison from multiple energy inputs.

Nonvolatile Control of the Electronic Properties of In2-xCrxO3 Semiconductor Films by Ferroelectric Polarization Charge

A series of Cr-doped In_2-xCr_xO₃ (ICO) semiconductor thin films were epitaxially grown on (111)-oriented 0.71Pb(Mg_1/3Nb_2/3)O₃-0.29PbTiO₃ (PMN-0.29PT) single-crystal substrates by the pulsed laser deposition. Upon the application of an electric field to the PMN-0.29PT substrate along the thickness direction, we realized in situ, reversible, and nonvolatile control of the electronic properties and Fermi level of the films, which are manifested by abundant physical phenomena such as the n-type to p-type transformation, metal-semiconductor transition, metal-insulator transition, crossover of the magnetoresistance (MR) from negative to positive, and a large nonvolatile on-and-off ratio of 5.5 × 10⁴% at room temperature. We also strictly disclose that both the sign and the magnitude of MR are determined by the electron carrier density of ICO films, which could modify the s-d exchange interaction and weak localization effect. Our results demonstrate that the ferroelectric gating approach using PMN-PT can be utilized to gain deeper insight into the carrier-density-related electronic properties of In₂O₃-based semiconductors and provide a simple and energy efficient way to construct multifunctional devices which can utilize the unique properties of composite materials.

Nonvolatile and Reversible Ferroelectric Control of Electronic Properties of Bi2Te3 Topological Insulator Thin Films Grown on Pb(Mg1/3Nb2/3)O3-PbTiO3 Single Crystals

Single-phase (00 l)-oriented Bi₂Te₃ topological insulator thin films have been deposited on (111)-oriented ferroelectric 0.71Pb(Mg_1/3Nb_2/3)O₃-0.29PbTiO₃ (PMN-PT) single-crystal substrates. Taking advantage of the nonvolatile polarization charges induced by the polarization direction switching of PMN-PT substrates at room temperature, the carrier density, Fermi level, magnetoconductance, conductance channel, phase coherence length, and quantum corrections to the conductance can be in situ modulated in a reversible and nonvolatile manner. Specifically, upon the polarization switching from the positively poled P_r⁺ state (i.e., polarization direction points to the film) to the negatively poled P_r^- (i.e., polarization direction points to the bottom electrode) state, both the electron carrier density and the Fermi wave vector decrease significantly, reflecting a shift of the Fermi level toward the Dirac point. The polarization switching from P_r⁺ to P_r^- also results in significant increase of the conductance channel α from -0.15 to -0.3 and a decrease of the phase coherence length from 200 to 80 nm at T = 2 K as well as a reduction of the electron-electron interaction. All these results demonstrate that electric-voltage control of physical properties using PMN-PT as both substrates and gating materials provides a simple and a straightforward approach to realize reversible and nonvolatile tuning of electronic properties of topological thin films and may be further extended to study carrier density-related quantum transport properties of other quantum matter.

Ultrasensitive negative photoresponse in 2D Cr2Ge2Te6 photodetector with light-induced carrier trapping

Cr₂Ge₂Te₆, a layered ferromagnetic semiconductor, has triggered extensive research interest due to its fantastic ferromagnetism and semiconducting characteristics as well as potential applications in next-generation spintronic and nanoelectronic devices. On the basis of its ferromagnetism, combined with rich electronic and optical properties, Cr₂Ge₂Te₆ could be a promising candidate for optoelectronics including magnetophotonics and photodetectors. However, there are no relevant studies addressing this to date. In this work, we comprehensively investigated the photoresponse characteristics of few-layer Cr₂Ge₂Te₆-based detectors. An uncommon negative photoconductivity (NPC) and correlated mechanism are explored with the Cr₂Ge₂Te₆ photodetector. It is found that, both NPC and positive photoconductivity (PPC) may exist in an individual Cr₂Ge₂Te₆ device, which are adjustable by control of the incident light intensity. More significantly, the NPC behavior enables ultrasensitive photoresponses of the Cr₂Ge₂Te₆ photodetectors, where the detection of a weak light with an incident power intensity as low as 0.04 pW and a high responsivity of 340 AW^-1 is achieved. This extraordinary performance demonstrates that the two-dimensional (2D) Cr₂Ge₂Te₆ holds great promise for applications in ultraweak light detection.

Integration of Oxide Semiconductor Thin Films with Relaxor-Based Ferroelectric Single Crystals with Large Reversible and Nonvolatile Modulation of Electronic Properties

We report the fabrication of 0.71Pb(Mg_1/3Nb_2/3)O₃-0.29PbTiO₃ (PMN-0.29PT)-based ferroelectric field effect transistors (FeFETs) by the epitaxial growth of cobalt-doped tin dioxide (SnO₂) semiconductor thin films on PMN-0.29PT single crystals. Using such FeFETs we realized in situ, reversible, and nonvolatile manipulation of the electron carrier density and achieved a large nonvolatile modulation of the resistance (∼330%) of the SnO₂:Co films through the polarization switching of PMN-0.29PT at 300 K. Particularly, combining the ferroelectric gating with piezoresponse force microscopy, X-ray diffraction, Hall effect, and magnetoresistance (MR), we rigorously disclose that both sign and magnitude of the MR are intrinsically determined by the electron carrier density, which could modify the s-d exchange interaction of the SnO₂:Co films. Furthermore, we realized multilevel resistance states of the SnO₂:Co films by combining the ferroelectric gating with ultraviolet light illumination, demonstrating that the FeFETs have potential applications in multistate resistive memories and electro-optical devices.

Intrinsic Ferromagnetism in the Diluted Magnetic Semiconductor Co:TiO_{2}

Here we present a study of magnetism in Co_{0.05}Ti_{0.95}O_{2-δ} anatase films grown by pulsed laser deposition under a variety of oxygen partial pressures and deposition rates. Energy-dispersive spectrometry and transmission electron microscopy analyses indicate that a high deposition rate leads to a homogeneous microstructure, while a very low rate or postannealing results in cobalt clustering. Depth resolved low-energy muon spin rotation experiments show that films grown at a low oxygen partial pressure (≈10^{-6}  torr) with a uniform structure are fully magnetic, indicating intrinsic ferromagnetism. First principles calculations identify the beneficial role of low oxygen partial pressure in the realization of uniform carrier-mediated ferromagnetism. This work demonstrates that Co:TiO_{2} is an intrinsic diluted magnetic semiconductor.

Semiconductor/Piezoelectrics Hybrid Heterostructures with Highly Effective Gate-Tunable Electrotransport and Magnetic Behaviors

We report the epitaxial growth of oxygen deficient titanium dioxide thin films on 0.7Pb(Mg_1/3Nb_2/3)O₃-0.3PbTiO₃ (PMN-PT) single crystals and realized highly effective in situ electrostatic manipulation of electrotransport and magnetism of TiO_2-δ films via gate voltages. Upon the polarization switching in the PMN-PT, the carrier density of the TiO_2-δ film could be reversibly modified, resulting in a large nonvolatile resistivity modulation by ∼51% at T = 300 K, approximately 4-12 times larger than that of other transition-metal oxide film/PMN-PT structures. By taking advantage of in situ manipulation of the carrier density via gate voltages, we found that competition between the trap of electrons by the Ti³⁺-V_O pairs and that by the positive polarization charges at the interface results in a significant resistivity relaxation upon the polarization switching, and revealed that magnetization is inversely correlated with the carrier density of the TiO_2-δ film. Such hybrid structures combining materials with dissimilar functionalities may have potential applications in multifunctional devices which can take advantage of the useful and unique properties of both materials.

Photo-induced enhancement of the power factor of Cu2S thermoelectric films

Element doping is commonly used to adjust the carrier concentrations in semiconductors such as thermoelectric materials. However, the doping process unavoidably brings in defects or distortions in crystal lattices, which further strongly affects the physical properties of the materials. In this work, high energy photons have been used to activate the carriers in Cu₂S thermoelectric films. As a result, the carrier concentrations, and the respective electrical conductivity as well as Seebeck coefficient are further changed. The photon-induced electrical transport properties are further analyzed utilizing a Parallel circuit model. Due to the realization of optimized carrier concentrations by photon activation, the power factor of Cu₂S film is improved more than 900 times as compared with the dark data. As compared to the traditional doping process, the approach using photon activation can realize the tuning of carrier concentrations without affecting crystal lattice. This method provides an opportunity to investigate the intrinsic physical properties of semiconductor materials without involving traditional element doping process that usually brings in additional lattice defects or distortions.

On the roles of graphene oxide doping for enhanced supercurrent in MgB2 based superconductors

Due to their graphene-like properties after oxygen reduction, incorporation of graphene oxide (GO) sheets into correlated-electron materials offers a new pathway for tailoring their properties. Fabricating GO nanocomposites with polycrystalline MgB2 superconductors leads to an order of magnitude enhancement of the supercurrent at 5 K/8 T and 20 K/4 T. Herein, we introduce a novel experimental approach to overcome the formidable challenge of performing quantitative microscopy and microanalysis of such composites, so as to unveil how GO doping influences the structure and hence the material properties. Atom probe microscopy and electron microscopy were used to directly image the GO within the MgB2, and we combined these data with computational simulations to derive the property-enhancing mechanisms. Our results reveal synergetic effects of GO, namely, via localized atomic (carbon and oxygen) doping as well as texturing of the crystals, which provide both inter- and intra-granular flux pinning. This study opens up new insights into how low-dimensional nanostructures can be integrated into composites to modify the overall properties, using a methodology amenable to a wide range of applications.

Magnetic and electrical properties of three-dimensional (La,Pr,Ca)MnO3 nanofilm/ZnO nanorod p–n junctions

Excellent room temperature rectification performance and enhanced ferromagnetic phase transition temperature was achieved for the La_0.5Pr_0.17Ca_0.33MnO₃ nanofilm/ZnO nanorod p–n junctions prepared by depositing the La_0.5Pr_0.17Ca_0.33MnO₃ shell layer on the ZnO nanorods.

Graphene based dots and antidots: a comparative study from first principles

Graphene based quantum dots and antidots are two nanostructures of primary importance for their fundamental physics and technological applications, particularly in the emerging field of graphene-based nanoelectronics and nanospintronics. Herein, based on first principles density functional theory calculations, we report a comparative study on the electronic structure of these two structurally complementary entities, where the bandgap opening, edge magnetism and the role of hydrogenation are investigated. Our results show the diversity of electronic structures of various dots and antidots, whose properties are sensitive to the edge detailed geometry (including size and shape and edge type). Hydrogen passivation plays an essential roal in affecting the related properties, in particular, it leads to larger bandgap values and suppress the edge magnetism. The frontier orbital analysis is employed to rationalize and compare the complicated nature of dots and antidots. Based on the specific geometrical consideration and the total energy competition of the ground antiferromagnetic and the ferromagnetic states, some magnetic structures (the unpassivated 42-atom-antidot and 54-atom-dot) are proposed to be useful as magnetic switches.

Direct observation of local potassium variation and its correlation to electronic inhomogeneity in (Ba(1-x)K(x))Fe2As2 pnictide

Local fluctuations in the distribution of dopant atoms are thought to cause the nanoscale electronic disorder or phase separation in pnictide superconductors. Atom probe tomography has enabled the first direct observations of dopant species clustering in a K-doped 122-phase pnictide. First-principles calculations suggest the coexistence of static magnetism and superconductivity on a lattice parameter length scale over a wide range of dopant concentrations. Our results provide evidence for a mixed scenario of phase coexistence and phase separation, depending on local dopant atom distributions.

Room-temperature ferromagnetism and the scaling relation between magnetization and average granule size in nanocrystalline Zn/ZnO core-shell structures prepared by sputtering

Ferromagnetism is found in nanocrystalline Zn/ZnO core-shell structures prepared by sputtering pure Zn with subsequent oxidation. The saturation magnetization (M(S)) of the passivated ZnO shells increases with decrease in average particle size (d). The Curie temperature of the samples is above 400 degrees C. It is found that the ferromagnetism has a close relationship with point defects in ZnO shells. The maximum magnetization is estimated to be 28 emu cm(-3) (i.e. 0.14 mu(B) per unit cell) at 300 K, which is over three orders of magnitude larger than that of undoped ZnO nanoparticles or nanorods (10(-3)-10(-2) emu cm(-3)). More importantly, there is a scaling relation of M(s) alpha 1/d(n) (n = 5.20 +/- 0.20) for samples with d <or= 76 nm despite substantial differences in the particle size and shape. The results suggest that defects at the interface of the Zn/ZnO heterostructure make the main magnetic contributions.

The origin of the non-monotonic field dependence of the blocking temperature in magnetic nanoparticles

The dependence of the peak temperature (T(P)) of the zero-field-cooled (ZFC) magnetization curves on the field in a magnetic nanoparticle system was studied using a diluted magnetic fluid composed of FePt nanoparticles. We found that the peak temperature increases with increasing applied field below 3 kOe; it then decreases when the applied field is increased further. We attribute the non-monotonic field dependence of the peak temperature to the anisotropic energy barrier distribution of the particles and to the slow decrease of high-field magnetization above the blocking temperature. Numerical simulations, based on magnetic dynamics, agree well with our experimental results.

A simple and convenient route to prepare poly(vinylidene fluoride trifluoroethylene) copolymer nanowires and nanotubes

Poly(vinylidene fluoride trifluoroethylene) copolymer nanowires and nanotubes have been prepared for the first time via a high temperature (</=260 degrees C) vacuum infiltration method, which is a simple and convenient route for fabricating polymer nanowires and nanotubes when polymers, instead of monomers, are used as the starting materials.