Influence of the Carbon Fiber Length Distribution in Polymer Matrix Composites for Large Format Additive Manufacturing via Fused Granular Fabrication

Many studies assess the suitability of fiber-reinforced polymer composites in additive manufacturing. However, the influence of the fiber length distribution on the mechanical and functional properties of printed parts using these technologies has not been addressed so far. Hence, in this work we compare different composites based on Acrylonitrile Styrene Acrylate (ASA) and carbon fiber (CF) suitable for large format additive manufacturing (LFAM) technologies based on fused granular fabrication (FGF). We study in detail the influence of the CF size on the processing and final properties of these materials. Better reinforcements were achieved with longer CF, reaching Young's modulus and tensile strength values of 7500 MPa and 75 MPa, respectively, for printed specimens. However, the longer CF also worsened the interlayer adhesion of ASA to a greater extent. The composites also exhibited electrical properties characteristic of electrostatic dissipative (ESD) materials (105-1010 Ω/sq) and low coefficients of thermal expansion below 15 µm/m·°C. These properties are governed by the CF length distribution, so this variable may be used to tune these values. These composites are promising candidates for the design of elements with enhanced mechanical and functional properties for ESD protection elements or molds, so the products can be manufactured on demand.

Thermal and Mechanical Properties of Reprocessed Polylactide/Titanium Dioxide Nanocomposites for Material Extrusion Additive Manufacturing

Polylactic acid (PLA) is a biodegradable polymer that can replace petroleum-based polymers and is widely used in material extrusion additive manufacturing (AM). The reprocessing of PLA leads to a downcycling of its properties, so strategies are being sought to counteract this effect, such as blending with virgin material or creating nanocomposites. Thus, two sets of nanocomposites based respectively on virgin PLA and a blend of PLA and reprocessed PLA (rPLA) with the addition of 0, 3, and 7 wt% of titanium dioxide nanoparticles (TiO2) were created via a double screw extruder system. All blends were used for material extrusion for 3D printing directly from pellets without difficulty. Scanning electron micrographs of fractured samples' surfaces indicate that the nanoparticles gathered in agglomerations in some blends, which were well dispersed in the polymer matrix. The thermal stability and degree of crystallinity for every set of nanocomposites have a rising tendency with increasing nanoparticle concentration. The glass transition and melting temperatures of PLA/TiO2 and PLA/rPLA/TiO2 do not differ much. Tensile testing showed that although reprocessed material implies a detriment to the mechanical properties, in the specimens with 7% nano-TiO2, this effect is counteracted, reaching values like those of virgin PLA.

Manufacture and Characterization of Polylactic Acid Filaments Recycled from Real Waste for 3D Printing

This paper studies the thermal, morphological, and mechanical properties of 3D-printed polylactic acid (PLA) blends of virgin and recycled material in the following proportions: 100/0, 25/75, 50/50, and 75/25, respectively. Real waste, used as recycled content, was shredded and sorted by size without a washing step. Regular dog-bone specimens were 3D printed from filaments, manufactured in a single screw extruder. Thermogravimetric analysis indicated that adding PLA debris to raw material did not significantly impact the thermal stability of the 3D-printed samples and showed that virgin and recycled PLA degraded at almost the same temperature. Differential scanning calorimetry revealed a significant reduction in crystallinity with increasing recycled content. Scanning electron microscopy showed a more homogenous structure for specimens from 100% pure PLA, as well as a more heterogeneous one for PLA blends. The tensile strength of the PLA blends increased by adding more recycled material, from 44.20 ± 2.18 MPa for primary PLA to 52.61 ± 2.28 MPa for the blend with the highest secondary PLA content. However, this study suggests that the mechanical properties of the reprocessed parts and their basic association are unique compared with those made up of virgin material.

Stereolithography of Semiconductor Silver and Acrylic-Based Nanocomposites

Polymer nanocomposites (PNCs) attract the attention of researchers and industry because of their potential properties in widespread fields. Specifically, electrically conductive and semiconductor PNCs are gaining interest as promising materials for biomedical, optoelectronic and sensing applications, among others. Here, metallic nanoparticles (NPs) are extensively used as nanoadditives to increase the electrical conductivity of mere acrylic resin. As the in situ formation of metallic NPs within the acrylic matrix is hindered by the solubility of the NP precursors, we propose a method to increase the density of Ag NPs by using different intermediate solvents, allowing preparation of Ag/acrylic resin nanocomposites with improved electrical behaviour. We fabricated 3D structures using stereolithography (SLA) by dissolving different quantities of metal precursor (AgClO₄) in methanol and in N,N-dimethylformamide (DMF) and adding these solutions to the acrylic resin. The high density of Ag NPs obtained notably increases the electrical conductivity of the nanocomposites, reaching the semiconductor regime. We analysed the effect of the auxiliary solvents during the printing process and the implications on the mechanical properties and the degree of cure of the fabricated nanocomposites. The good quality of the materials prepared by this method turn these nanocomposites into promising candidates for electronic applications.

Effect of Thermal and Hydrothermal Accelerated Aging on 3D Printed Polylactic Acid

In the new transformation of 'Industry 4.0', additive manufacturing technologies have become one of the fastest developed industries, with polylactic acid (PLA) playing a significant role. However, there is an increasing amount of garbage generated during the printing process and after prototypes or end-of-life parts. Re-3D printing is one way to recycle PLA waste from fused filament fabrication. To do this process successfully, the properties of the waste mixture should be known. Previous studies have found that PLA degrades hydrolytically, but the time at which this process occurs for 3D printed products is not specified. This work aims to establish the baseline of the degradation kinetics of 3D printed PLA products to predict the service time until which these properties are retained. To achieve this, 3D printed specimens were thermally and hydrothermally aged during several time intervals. Thermal and mechanical properties were also determined. This study reveals that tensile strength decreases after 1344 h of hydrothermal ageing, simulating 1.5-2.5 years of real service time. PLA therefore has the same thermo-mechanical properties before reaching 1.5-years of age, so it could be recycled.

Comparison of the Material Quality of AlxIn1-xN (x-0-0.50) Films Deposited on Si(100) and Si(111) at Low Temperature by Reactive RF Sputtering

Al_xIn_1-xN ternary semiconductors have attracted much interest for application in photovoltaic devices. Here, we compare the material quality of Al_xIn_1-xN layers deposited on Si with different crystallographic orientations, (100) and (111), via radio-frequency (RF) sputtering. To modulate their Al content, the Al RF power was varied from 0 to 225 W, whereas the In RF power and deposition temperature were fixed at 30 W and 300 °C, respectively. X-ray diffraction measurements reveal a c-axis-oriented wurtzite structure with no phase separation regardless of the Al content (x = 0-0.50), which increases with the Al power supply. The surface morphology of the Al_xIn_1-xN layers improves with increasing Al content (the root-mean-square roughness decreases from ≈12 to 2.5 nm), and it is similar for samples grown on both Si substrates. The amorphous layer (~2.5 nm thick) found at the interface with the substrates explains the weak influence of their orientation on the properties of the Al_xIn_1-xN films. Simultaneously grown Al_xIn_1-xN-on-sapphire samples point to a residual n-type carrier concentration in the 10²⁰-10²¹ cm^-3 range. The optical band gap energy of these layers evolves from 1.75 to 2.56 eV with the increase in the Al. PL measurements of Al_xIn_1-xN show a blue shift in the peak emission when adding the Al, as expected. We also observe an increase in the FWHM of the main peak and a decrease in the integrated emission with the Al content in room-temperature PL measurements. In general, the material quality of the Al_xIn_1-xN films on Si is similar for both crystallographic orientations.

Basalt Fiber Composites with Reduced Thermal Expansion for Additive Manufacturing

Fused filament fabrication (FFF) is gaining attention as an efficient way to create parts and replacements on demand using thermoplastics. This technology requires the development of new materials with a reliable printability that satisfies the requirement of final parts. In this context, a series of composites based on acrylonitrile styrene acrylate (ASA) reinforced with basalt fiber (BF) are reported in this work. First, several surface modification treatments are applied onto the BF to increase their compatibility with the ASA matrix. Then, once the best treatment is identified, the mechanical properties, coefficient of thermal expansion (CTE) and warping distortion of the different specimens designed and prepared by FFF are studied. It was found that the silanized BF is appropriate for an adequate printing, obtaining composites with higher stiffness, tensile strength, low CTE and a significant reduction in part distortion. These composites are of potential interest in the design and manufacturing of final products by FFF, as they show much lower CTE values than pure ASA, which is essential to successfully fabricate large objects using this technique.

Self-Assembly of CsPbBr3 Perovskites in Micropatterned Polymeric Surfaces: Toward Luminescent Materials with Self-Cleaning Properties

In this work, we present a series of porous, honeycomb-patterned polymer films containing CsPbBr₃ perovskite nanocrystals as light emitters prepared by the breath figure approach. Microscopy analysis of the topography and composition of the material evidence that the CsPbBr₃ nanocrystals are homogeneously distributed within the polymer matrix but preferably confined inside the pores due to the fabrication process. The optical properties of the CsPbBr₃ nanocrystals remain unaltered after the film formation, proving that they are stable inside the polystyrene matrix, which protects them from degradation by environmental factors. Moreover, these surfaces present highly hydrophobic behavior due to their high porosity and defined micropatterning, which is in agreement with the Cassie-Baxter model. This is evidenced by performing a proof-of-concept coating on top of 3D-printed LED lenses, conferring the material with self-cleaning properties, while the CsPbBr₃ nanocrystals embedded inside the polymeric matrix maintain their luminescent behavior.

Polymer Composites with Cork Particles Functionalized by Surface Polymerization for Fused Deposition Modeling

Cork powder received as a byproduct from local industries is valorized through the development of composite materials suitable for fused deposition modeling (FDM). For this purpose, a polymeric matrix of acrylonitrile-styrene-butyl acrylate (ASA) is used due to its good mechanical resistance and weather resistance properties. Prior to the manufacturing of the composites, the cork particles are characterized and modified by surface polymerization, creating a layer of poly(butyl acrylate) (PBA). Then, filaments for FDM are prepared by solvent casting and extrusion from ASA and composites with unmodified cork (ASA + C) and PBA-modified cork (ASA + C_m). PBA is one of the polymers present in the structure of ASA, which increases the compatibility between the cork particles and the polymer matrix. This is evidenced by evaluating the mechanical properties of the composites and examining their fracture surface by scanning electron microscopy. The analysis of the thermal properties shows that the developed composites also present enhanced insulating properties.

Structural Characterization of Al0.37In0.63N/AlN/p-Si (111) Heterojunctions Grown by RF Sputtering for Solar Cell Applications

Compact Al_0.37In_0.63N layers were grown by radiofrequency sputtering on bare and 15 nm-thick AlN-buffered Si (111) substrates. The crystalline quality of the AlInN layers was studied by high-resolution X-ray diffraction measurements and transmission electron microscopy. Both techniques show an improvement of the structural properties when the AlInN layer is grown on a 15 nm-thick AlN buffer. The layer grown on bare silicon exhibits a thin amorphous interfacial layer between the substrate and the AlInN, which is not present in the layer grown on the AlN buffer layer. A reduction of the density of defects is also observed in the layer grown on the AlN buffer.

Purcell Enhancement and Wavelength Shift of Emitted Light by CsPbI3 Perovskite Nanocrystals Coupled to Hyperbolic Metamaterials

Manipulation of the exciton emission rate in nanocrystals of lead halide perovskites (LHPs) was demonstrated by means of coupling of excitons with a hyperbolic metamaterial (HMM) consisting of alternating thin metal (Ag) and dielectric (LiF) layers. Such a coupling is found to induce an increase of the exciton radiative recombination rate by more than a factor of three due to the Purcell effect when the distance between the quantum emitter and HMM is nominally as small as 10 nm, which coincides well with the results of our theoretical analysis. Besides, an effect of the coupling-induced long wavelength shift of the exciton emission spectrum is detected and modeled. These results can be of interest for quantum information applications of single emitters on the basis of perovskite nanocrystals with high photon emission rates.

Influence of the Degree of Cure in the Bulk Properties of Graphite Nanoplatelets Nanocomposites Printed via Stereolithography

In this work, we report on the fabrication via stereolithography (SLA) of acrylic-based nanocomposites using graphite nanoplatelets (GNPs) as an additive. GNPs are able to absorb UV-Vis radiation, thus blocking partial or totally the light path of the SLA laser. Based on this, we identified a range of GNP concentrations below 2.5 wt %, where nanocomposites can be successfully printed. We show that, even though GNP is well-dispersed along the polymeric matrix, nanocomposites presented lower degrees of cure and therefore worse mechanical properties when compared with pristine resin. However, a post-processing at 60 °C with UV light for 1 h eliminates this difference in the degree of cure, reaching values above 90% in all cases. In these conditions, the tensile strength is enhanced for 0.5 wt % GNP nanocomposites, while the stiffness is increased for 0.5-1.0 wt % GNP nanocomposites. Finally, we also demonstrate that 2.5 wt % GNP nanocomposites possess characteristic properties of semiconductors, which allows them to be used as electrostatic dispersion materials.

Effect of the cap layer growth temperature on the Sb distribution in InAs/InSb/InAs sub-monolayer heterostructures for mid-infrared devices

Sub-monolayer (SML) deposition of InSb within InAs matrix by migration enhanced epitaxy tends to form type II SML nanostructures offering efficient light emission within the mid-infrared (MIR) range between 3 and 5 μm. In this work, we report on the Sb distribution in InSb/InAs SML nanostructures with InAs cap layers grown at temperatures lower than that associated with the under-grown InSb active layer. Analysis by transmission electron microscopy (TEM) in 002 dark field conditions shows that the reduction in the growth temperature of the InAs cap layer increases the amount of Sb deposited in the layers, in good agreement with the x-ray diffraction results. TEM micrographs also show that the layers are formed by random InSbAs agglomerates, where the lower cap temperature leads to a more continuous InSb layer. Quantitative atomic column resolved high angle annular dark field-scanning (S)TEM analyses also reveal atomic columns with larger composition of Sb for the structure with the lowest InAs cap layer temperature. The dependence of the Sb distribution on InAs cap growth temperature allows tuning the corresponding emission wavelength in the MIR range, as shown by the photoluminescence emission spectra.

Investigation on Sb distribution for InSb/InAs sub-monolayer heterostructure using TEM techniques

InSb/InAs sub-monolayer (SML) nanostructures such as SML quantum dots offer sharper emission spectra, a better modal gain and a larger modulation bandwidth compared to its Stranski-Krastanov counterpart. In this work, the Sb distribution of SML InSb layers grown by migration enhanced epitaxy has been analyzed by transmission electron microscopy (TEM) techniques. The analysis of the material by diffraction contrast in 002 dark field conditions and by atomic column resolved high angle annular dark field-scanning TEM reveal the presence of a low Sb content InSbAs continuous layer with scarce Sb-rich InSbAs agglomerates. The intensity profiles obtained by both techniques point to Sb segregation during growth. This segregation has been quantified using the Muraki segregation model obtaining a high segregation coefficient R of 0.81 towards the growth direction. The formation of a continuous InSbAs wetting layer as a result of a SML deposition of Sb on the InAs surface is discussed.

Inhibition of light emission from the metastable tetragonal phase at low temperatures in island-like films of lead iodide perovskites

Photonic applications based on halide perovskites, namely CH3NH3PbI3 (MAPbI3), have recently attracted remarkable attention due to the high efficiencies reported for photovoltaic and light emitting devices. Despite these outstanding results, there are many temperature-, laser excitation power-, and morphology-dependent phenomena that require further research to be completely understood. In this work, we have investigated in detail the nature of exciton optical transitions and recombination dynamics below and above the orthorhombic/tetragonal ('O'-/'T'-) temperature phase transition (∼150 K) depending on the material continuity (continuous-like) or discontinuity (island-like) in MAPbI3 films. At low temperatures, continuous thin films of the perovskite can exhibit strain inhomogeneities associated with the formation of different 'T'-defective domains leading to an energy spread of states over more than 200 meV. On the other hand, a single photoluminescence line peak related to the perovskite 'O'-phase (associated with the distortion of the [PbI3]- anion) is observed in the island-like sample that we attribute to strain relaxation for this morphology. Moreover, the predominantly radiative recombination dynamics of the continuous-like sample mainly originates from nongeminate electron-hole formation of excitons in the 'O'-phase and the internal dynamics with carrier trapping levels. This observation is in strong contrast to the free exciton recombination dominantly found in the island-like sample.

High Spatial Resolution Mapping of Localized Surface Plasmon Resonances in Single Gallium Nanoparticles

Plasmonics has emerged as an attractive field driving the development of optical systems in order to control and exploit light-matter interactions. The increasing interest around plasmonic systems is pushing the research of alternative plasmonic materials, spreading the operability range from IR to UV. Within this context, gallium appears as an ideal candidate, potentially active within a broad spectral range (UV-VIS-IR), whose optical properties are scarcely reported. Importantly, the smart design of active plasmonic materials requires their characterization at high spatial and spectral resolution to access the optical fingerprint of individual nanostructures, attainable by transmission electron microscopy techniques (i.e., by means of electron energy-loss spectroscopy, EELS). Therefore, the optical response of individual Ga nanoparticles (NPs) by means of EELS measurements is analyzed, in order to spread the understanding of the plasmonic response of Ga NPs. The results show that single Ga NPs may support several plasmon modes, whose nature is extensively discussed.

Room-temperature Operation of Low-voltage, Non-volatile, Compound-semiconductor Memory Cells

Whilst the different forms of conventional (charge-based) memories are well suited to their individual roles in computers and other electronic devices, flaws in their properties mean that intensive research into alternative, or emerging, memories continues. In particular, the goal of simultaneously achieving the contradictory requirements of non-volatility and fast, low-voltage (low-energy) switching has proved challenging. Here, we report an oxide-free, floating-gate memory cell based on III-V semiconductor heterostructures with a junctionless channel and non-destructive read of the stored data. Non-volatile data retention of at least 10⁴ s in combination with switching at ≤2.6 V is achieved by use of the extraordinary 2.1 eV conduction band offsets of InAs/AlSb and a triple-barrier resonant tunnelling structure. The combination of low-voltage operation and small capacitance implies intrinsic switching energy per unit area that is 100 and 1000 times smaller than dynamic random access memory and Flash respectively. The device may thus be considered as a new emerging memory with considerable potential.

Structural characterization of bulk and nanoparticle lead halide perovskite thin films by (S)TEM techniques

Lead halide (APbX₃) perovskites, in polycrystalline thin films but also perovskite nanoparticles (NPs) has demonstrated excellent performance to implement a new generation of photovoltaic and photonic devices. The structural characterization of APbX₃ thin films using (scanning) transmission electron microscopy ((S)TEM) techniques can provide valuable information that can be used to understand and model their optoelectronic performance and device properties. However, since APbX₃ perovskites are soft materials, their characterization using (S)TEM is challenging. Here, we study and compare the structural properties of two different metal halide APbX₃ perovskite thin films: bulk CH₃NH₃PbI₃ prepared by spin-coating of the precursors in solution and CsPbBr₃ colloidal NPs synthetized and deposited by doctor blading. Both specimen preparation methods and working conditions for analysis by (S)TEM are properly optimized. We show that CH₃NH₃PbI₃ thin films grown by a one-step method are composed of independent grains with random orientations. The growth method results in the formation of tetragonal perovskite thin films with good adherence to an underlying TiO₂ layer, which is characterized by a photoluminescence (PL) emission band centered at 775 nm. The perovskite thin films based on CsPbBr₃ colloidal NPs, which are used as the building blocks of the film, are preserved by the deposition process, even if small gaps are observed between adjacent NPs. The crystal structure of CsPbBr₃ NPs is cubic, which is beneficial for optical properties due to its optimal band gap. The absorption and PL spectra measured in both the thin film and the colloidal solution of CsPbBr₃ NPs are very similar, indicating a good homogeneity of the thin films and the absence of aggregation of NPs. However, a particular care was required to avoid long electron irradiation times during our structural studies, even at a low voltage of 80 kV, as the material was observed to decompose through Pb segregation.

Development of Surface-Coated Polylactic Acid/Polyhydroxyalkanoate (PLA/PHA) Nanocomposites

This work reports on the design and development of nanocomposites based on a polymeric matrix containing biodegradable Polylactic Acid (PLA) and Polyhydroxyalkanoate (PHA) coated with either Graphite NanoPlatelets (GNP) or silver nanoparticles (AgNP). Nanocomposites were obtained by mechanical mixing under mild conditions and low load contents (<0.10 wt %). This favours physical adhesion of the additives onto the polymer surface, while the polymeric bulk matrix remains unaffected. Nanocomposite characterisation was performed via optical and focused ion beam microscopy, proving these nanocomposites are selectively modified only on the surface, leaving bulk polymer unaffected. Processability of these materials was proven by the fabrication of samples via injection moulding and mechanical characterisation. Nanocomposites showed enhanced Young modulus and yield strength, as well as better thermal properties when compared with the unmodified polymer. In the case of AgNP coated nanocomposites, the surface was found to be optically active, as observed in the increase of the resolution of Raman spectra, acquired at least 10 times, proving these nanocomposites are promising candidates as surface enhanced Raman spectroscopy (SERS) substrates.

Influence of the crosstalk on the intensity of HAADF-STEM images of quaternary semiconductor materials

The influence of the neighbouring atomic-columns in determining the composition at atomic column scale of quaternary semiconductor compounds, using simulated HAADF-STEM images is evaluated. The InAlAsSb alloy, a promising material in the photovoltaic field, is considered. We find that the so called 'crosstalk' effect plays an important role for the aimed compositional determination. The intensity transfer is larger from neighbouring atomic columns with higher average Z, and towards atomic columns with smaller Z. Our results show that in order to obtain precise information on the column composition, the HAADF-STEM intensities of both columns need to be taken into account simultaneously.

Analysis of Bi Distribution in Epitaxial GaAsBi by Aberration-Corrected HAADF-STEM

The Bi content in GaAs/GaAs_1 - xBi _x /GaAs heterostructures grown by molecular beam epitaxy at a substrate temperature close to 340 °C is investigated by aberration-corrected high-angle annular dark-field techniques. The analysis at low magnification of high-angle annular dark-field scanning transmission electron microscopy images, corroborated by EDX analysis, revealed planar defect-free layers and a non-homogeneous Bi distribution at the interfaces and within the GaAsBi layer. At high magnification, the qHAADF analysis confirmed the inhomogeneous distribution and Bi segregation at the GaAsBi/GaAs interface at low Bi flux and distorted dumbbell shape in areas with higher Bi content. At higher Bi flux, the size of the Bi gathering increases leading to roughly equiaxial Bi-rich particles faceted along zinc blende {111} and uniformly dispersed around the matrix and interfaces. FFT analysis checks the coexistence of two phases in some clusters: a rhombohedral pure Bi (rh-Bi) one surrounded by a zinc blende GaAs_1 - xBi _x matrix. Clusters may be affecting to the local lattice relaxation and leading to a partially relaxed GaAsBi/GaAs system, in good agreement with XRD analysis.

Size effect and scaling power-law for superelasticity in shape-memory alloys at the nanoscale

Shape-memory alloys capable of a superelastic stress-induced phase transformation and a high displacement actuation have promise for applications in micro-electromechanical systems for wearable healthcare and flexible electronic technologies. However, some of the fundamental aspects of their nanoscale behaviour remain unclear, including the question of whether the critical stress for the stress-induced martensitic transformation exhibits a size effect similar to that observed in confined plasticity. Here we provide evidence of a strong size effect on the critical stress that induces such a transformation with a threefold increase in the trigger stress in pillars milled on [001] L2₁ single crystals from a Cu-Al-Ni shape-memory alloy from 2 μm to 260 nm in diameter. A power-law size dependence of n = -2 is observed for the nanoscale superelasticity. Our observation is supported by the atomic lattice shearing and an elastic model for homogeneous martensite nucleation.

Atom-scale compositional distribution in InAlAsSb-based triple junction solar cells by atom probe tomography

The analysis by atom probe tomography (APT) of InAlAsSb layers with applications in triple junction solar cells (TJSCs) has shown the existence of In- and Sb-rich regions in the material. The composition variation found is not evident from the direct observation of the 3D atomic distribution and because of this a statistical analysis has been required. From previous analysis of these samples, it is shown that the small compositional fluctuations determined have a strong effect on the optical properties of the material and ultimately on the performance of TJSCs.

High spatial resolution mapping of individual and collective localized surface plasmon resonance modes of silver nanoparticle aggregates: correlation to optical measurements

Non-isolated nanoparticles show a plasmonic response that is governed by the localized surface plasmon resonance (LSPR) collective modes created by the nanoparticle aggregates. The individual and collective LSPR modes of silver nanoparticle aggregated by covalent binding by means of bifunctional molecular linkers are described in this study. Individual contributions to the collective modes are investigated at nanometer scale by means of energy-filtering transmission electron microscopy and compared to ultraviolet-visible spectroscopy. It is found that the aspect ratio and the shape of the clusters are the two main contributors to the low-energy collective modes.

Mapping the plasmonic response of gold nanoparticles embedded in TiO₂ thin films

We present the mapping of the plasmonic properties of gold nanoparticles that are embedded in a TiO2 thin film deposited over two different substrates, glass and silicon. An improved electron energy-loss spectroscopy (EELS) imaging technique was used to extract plasmon maps with nanometre resolution. Several representative cases of randomly dispersed NPs have been examined to carefully evaluate surrounding effects on the optical response of such nanostructured material. Data were compared to analytical calculations and showed good agreement. These results validate previous structural and far-field optical results and provide a clear description of the optical phenomena that take place at a nanometre scale in these materials. They are of primary importance for enlightening the way to the fabrication of thin film materials including metallic nanostructures for photovoltaic applications.

Analysis of electron beam damage of exfoliated MoS₂ sheets and quantitative HAADF-STEM imaging

In this work we examined MoS₂ sheets by aberration-corrected scanning transmission electron microscopy (STEM) at three different energies: 80, 120 and 200 kV. Structural damage of the MoS₂ sheets has been controlled at 80 kV according a theoretical calculation based on the inelastic scattering of the electrons involved in the interaction electron-matter. The threshold energy for the MoS₂ material has been found and experimentally verified in the microscope. At energies higher than the energy threshold we show surface and edge defects produced by the electron beam irradiation. Quantitative analysis at atomic level in the images obtained at 80 kV has been performed using the experimental images and via STEM simulations using SICSTEM software to determine the exact number of MoS2₂ layers.

Charge transfer interactions in self-assembled single walled carbon nanotubes/Dawson–Wells polyoxometalate hybrids

Electron transfer in strongly coupled photoactive hybrids built by direct combination of Dawson-type polyoxometalates with pyrene anchors and SWCNTs.

Strain analysis for the prediction of the preferential nucleation sites of stacked quantum dots by combination of FEM and APT

The finite elements method (FEM) is a useful tool for the analysis of the strain state of semiconductor heterostructures. It has been used for the prediction of the nucleation sites of stacked quantum dots (QDs), but often using either simulated data of the atom positions or two-dimensional experimental data, in such a way that it is difficult to assess the validity of the predictions. In this work, we assess the validity of the FEM method for the prediction of stacked QD nucleation sites using three-dimensional experimental data obtained by atom probe tomography (APT). This also allows us to compare the simulation results with the one obtained experimentally. Our analysis demonstrates that FEM and APT constitute a good combination to resolve strain-stress problems of epitaxial semiconductor structures.

High spatial resolution mapping of surface plasmon resonance modes in single and aggregated gold nanoparticles assembled on DNA strands

We present the mapping of the full plasmonic mode spectrum for single and aggregated gold nanoparticles linked through DNA strands to a silicon nitride substrate. A comprehensive analysis of the electron energy loss spectroscopy images maps was performed on nanoparticles standing alone, dimers, and clusters of nanoparticles. The experimental results were confirmed by numerical calculations using the Mie theory and Gans-Mie theory for solving Maxwell's equations. Both bright and dark surface plasmon modes have been unveiled. PACS: 78.67.Bf; 61.46.Df; 87.64.Ee.

Analysis of the 3D distribution of stacked self-assembled quantum dots by electron tomography

The 3D distribution of self-assembled stacked quantum dots (QDs) is a key parameter to obtain the highest performance in a variety of optoelectronic devices. In this work, we have measured this distribution in 3D using a combined procedure of needle-shaped specimen preparation and electron tomography. We show that conventional 2D measurements of the distribution of QDs are not reliable, and only 3D analysis allows an accurate correlation between the growth design and the structural characteristics.

Production of nanometer-size GaAs nanocristals by nanosecond laser ablation in liquid

This paper reports the formation and characterization of spherical GaAs quantum dots obtained by nanosecond pulsed laser ablation in a liquid (ethanol or methanol). The produced bare GaAs nanoparticles demonstrate rather narrow size distribution which depends on the applied laser power density (from 4.25 to 13.9 J/cm2 in our experiments) and is as low as 2.5 nm for the highest power used. The absolute value of the average diameter also decreases significantly, from 13.7 to 8.7 nm, as the laser power increases in this interval. Due to the narrow nanoparticle size dispersion achieved at the highest laser powers two absorption band edges are clearly distinguishable at about 1.72 and 3.15 eV which are ascribed to E0 and E1 effective optical transitions, respectively. A comparison of the energies with those known for bulk GaAs allows one to conclude that an average diameter of the investigated GaAs nanoparticles is close to 10 nm, i.e., they are quantum dots. High resolution transmission electron microscopy (HRTEM) images show that the bare GaAs nanoparticles are nanocrystalline, but many of them exhibit single/multiple twin boundary defects or even polycrystallinity. The formation of the GaAs crystalline core capped with a SiO2 shell was demonstrated by HRTEM and energy dispersive X-ray (EDX) spectroscopy. Effective band edges can be better distinguished in SiO2 capped nanoparticles than in bare ones, In both cases the band edges are correlated with size quantum confinement effect.

Compositional analysis with atomic column spatial resolution by 5th-order aberration-corrected scanning transmission electron microscopy

We show in this article that it is possible to obtain elemental compositional maps and profiles with atomic-column resolution across an InxGa1-xAs multilayer structure from 5th-order aberration-corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) images. The compositional profiles obtained from the analysis of HAADF-STEM images describe accurately the distribution of In in the studied multilayer in good agreement with Muraki's segregation model [Muraki, K., Fukatsu, S., Shiraki, Y. & Ito, R. (1992). Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantums wells. Appl Phys Lett 61, 557-559].

Calculation of integrated intensities in aberration-corrected Z-contrast images

Inclusion of spatial incoherence has been shown to give quantitative agreement between non-aberration-corrected high-angle annular dark-field scanning transmission electron microscopy images and theoretical simulations. Here we show that, using the same approach, a significant improvement in the correlation between calculated and experimental normalized integrated intensities is obtained in the InAsP ternary semiconductor alloy, but residual discrepancies remain. We have demonstrated, in good agreement with experimental intensities obtained in calibrated samples, that normalized integrated intensities show a low dependence on the sample thickness over a wide range of thickness values. This behaviour does not occur in conventional (non-aberration-corrected) images and constitutes a powerful tool for straightforward interpretation of high-resolution images in terms of atomic column-resolved compositional maps.

Growth of Low-Density Vertical Quantum Dot Molecules with Control in Energy Emission

In this work, we present results on the formation of vertical molecule structures formed by two vertically aligned InAs quantum dots (QD) in which a deliberate control of energy emission is achieved. The emission energy of the first layer of QD forming the molecule can be tuned by the deposition of controlled amounts of InAs at a nanohole template formed by GaAs droplet epitaxy. The QD of the second layer are formed directly on top of the buried ones by a strain-driven process. In this way, either symmetric or asymmetric vertically coupled structures can be obtained. As a characteristic when using a droplet epitaxy patterning process, the density of quantum dot molecules finally obtained is low enough (2 × 10(8) cm(-2)) to permit their integration as active elements in advanced photonic devices where spectroscopic studies at the single nanostructure level are required.

Morphological evolution of InAs/InP quantum wires through aberration-corrected scanning transmission electron microscopy

Evolution of the size, shape and composition of self-assembled InAs/InP quantum wires through the Stranski-Krastanov transition has been determined by aberration-corrected Z-contrast imaging. High resolution compositional maps of the wires in the initial, intermediate and final formation stages are presented. (001) is the main facet at their very initial stage of formation, which is gradually reduced in favour of [114] or [118], ending with the formation of mature quantum wires with {114} facets. Significant changes in wire dimensions are measured when varying slightly the amount of InAs deposited. These results are used as input parameters to build three-dimensional models that allow calculation of the strain energy during the quantum wire formation process. The observed morphological evolution is explained in terms of the calculated elastic energy changes at the growth front. Regions of the wetting layer close to the nanostructure perimeters have higher strain energy, causing migration of As atoms towards the quantum wire terraces, where the structure is partially relaxed; the thickness of the wetting layer is reduced in these zones and the island height increases until the (001) facet is removed.

Blocking of indium incorporation by antimony in III-V-Sb nanostructures

The addition of antimony to III-V nanostructures is expected to give greater freedom in bandgap engineering for device applications. One of the main challenges to overcome is the effect of indium and antimony surface segregation. Using several very high resolution analysis techniques we clearly demonstrate blocking of indium incorporation by antimony. Furthermore, indium incorporation resumes when the antimony concentration drops below a critical level. This leads to major differences between nominal and actual structures.

Aberration-corrected scanning transmission electron microscopy: from atomic imaging and analysis to solving energy problems

The new possibilities of aberration-corrected scanning transmission electron microscopy (STEM) extend far beyond the factor of 2 or more in lateral resolution that was the original motivation. The smaller probe also gives enhanced single atom sensitivity, both for imaging and for spectroscopy, enabling light elements to be detected in a Z-contrast image and giving much improved phase contrast imaging using the bright field detector with pixel-by-pixel correlation with the Z-contrast image. Furthermore, the increased probe-forming aperture brings significant depth sensitivity and the possibility of optical sectioning to extract information in three dimensions. This paper reviews these recent advances with reference to several applications of relevance to energy, the origin of the low-temperature catalytic activity of nanophase Au, the nucleation and growth of semiconducting nanowires, and the origin of the eight orders of magnitude increased ionic conductivity in oxide superlattices. Possible future directions of aberration-corrected STEM for solving energy problems are outlined.

A method to determine the strain and nucleation sites of stacked nano-objects

We determine the compositional distribution with atomic column resolution in a horizontal nanowire from the analysis of aberration-corrected high resolution Z-contrast images. The strain field in a layer capping the analysed nanowire is determined by anisotropic elastic theory from the resulting compositional map. The reported method allows preferential nucleation sites for epitaxial nanowires to be predicted with high spatial resolution, as required for accurate tuning of desired optical properties. The application of this method has been exemplified in this work for stacked InAs(P) horizontal nanowires grown on InP separated by 3 nm thick InP layers, but we propose it as a general method to be applied to other stacked nano-objects.

Point defect configurations of supersaturated Au atoms inside Si nanowires

Aberration-corrected scanning transmission electron microscopy (STEM) is used to reveal individual Au atom configurations inside Si nanowires grown by Au-catalyzed vapor-liquid-solid (VLS) molecular beam epitaxy (MBE). We identify a substitutional and three distinct interstitial configurations, one of which has not been previously identified. We confirm the stability of the observed point defect configurations by density functional theory (DFT) calculations. The observed number densities of the various configurations are in accord with their calculated formation energies. The concentration of Au atoms is larger than the solubility limit, but the effect may be caused by the STEM beam.

Error quantification in strain mapping methods

In this article a method for determining errors of the strain values when applying strain mapping techniques has been devised. This methodology starts with the generation of a thickness/defocus series of simulated high-resolution transmission electron microscopy images of InAsxP1-x/InP heterostructures and the application of geometric phase. To obtain optimal defocusing conditions, a comparison of different defocus values is carried out by the calculation of the strain profile standard deviations among different specimen thicknesses. Finally, based on the analogy of real state strain to a step response, a characterization of strain mapping error near an interface is proposed.

The Peak Pairs algorithm for strain mapping from HRTEM images

Strain mapping is defined as a numerical image-processing technique that measures the local shifts of image details around a crystal defect with respect to the ideal, defect-free, positions in the bulk. Algorithms to map elastic strains from high-resolution transmission electron microscopy (HRTEM) images may be classified into two categories: those based on the detection of peaks of intensity in real space and the Geometric Phase approach, calculated in Fourier space. In this paper, we discuss both categories and propose an alternative real space algorithm (Peak Pairs) based on the detection of pairs of intensity maxima in an affine transformed space dependent on the reference area. In spite of the fact that it is a real space approach, the Peak Pairs algorithm exhibits good behaviour at heavily distorted defect cores, e.g. interfaces and dislocations. Quantitative results are reported from experiments to determine local strain in different types of semiconductor heterostructures.

Determination of the strain generated in InAs/InP quantum wires: prediction of nucleation sites

The compositional distribution in a self-assembled InAs(P) quantum wire grown by molecular beam epitaxy on an InP(001) substrate has been determined by electron energy loss spectrum imaging. We have determined the strain and stress fields generated in and around this wire capped with a 5 nm InP layer by finite element calculations using as input the compositional map experimentally obtained. Preferential sites for nucleation of wires grown on the surface of this InP capping layer are predicted, based on chemical potential minimization, from the determined strain and stress fields on this surface. The determined preferential sites for wire nucleation agree with their experimentally measured locations. The method used in this paper, which combines electron energy loss spectroscopy, high-resolution Z contrast imaging, and elastic theory finite element calculations, is believed to be a valuable technique of wide applicability for predicting the preferential nucleation sites of epitaxial self-assembled nano-objects.