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Gunnarsson WB, Roh K, Zhao L, Murphy JP, Grede AJ, Giebink NC, Rand BP. Toward Nonepitaxial Laser Diodes. Chem Rev 2023. [PMID: 37219995 DOI: 10.1021/acs.chemrev.2c00721] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Thin-film organic, colloidal quantum dot, and metal halide perovskite semiconductors are all being pursued in the quest for a wavelength-tunable diode laser technology that does not require epitaxial growth on a traditional semiconductor substrate. Despite promising demonstrations of efficient light-emitting diodes and low-threshold optically pumped lasing in each case, there are still fundamental and practical barriers that must be overcome to reliably achieve injection lasing. This review outlines the historical development and recent advances of each material system on the path to a diode laser. Common challenges in resonator design, electrical injection, and heat dissipation are highlighted, as well as the different optical gain physics that make each system unique. The evidence to date suggests that continued progress for organic and colloidal quantum dot laser diodes will likely hinge on the development of new materials or indirect pumping schemes, while improvements in device architecture and film processing are most critical for perovskite lasers. In all cases, systematic progress will require methods that can quantify how close new devices get with respect to their electrical lasing thresholds. We conclude by discussing the current status of nonepitaxial laser diodes in the historical context of their epitaxial counterparts, which suggests that there is reason to be optimistic for the future.
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Affiliation(s)
- William B Gunnarsson
- Department of Electrical and Computer Engineering, Princeton University, Princeton, New Jersey 08544, United States
| | - Kwangdong Roh
- Department of Physics, Ewha Womans University, Seoul 03760, Republic of Korea
| | - Lianfeng Zhao
- Holcombe Department of Electrical and Computer Engineering, Clemson University, Clemson, South Carolina 29634, United States
| | - John P Murphy
- Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Alex J Grede
- Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Noel C Giebink
- Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Barry P Rand
- Department of Electrical and Computer Engineering, Princeton University, Princeton, New Jersey 08544, United States
- Andlinger Center for Energy and the Environment, Princeton University, Princeton, New Jersey 08544, United States
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Zhao L, Astridge DD, Gunnarsson WB, Xu Z, Hong J, Scott J, Kacmoli S, Al Kurdi K, Barlow S, Marder SR, Gmachl CF, Sellinger A, Rand BP. Thermal Properties of Polymer Hole-Transport Layers Influence the Efficiency Roll-off and Stability of Perovskite Light-Emitting Diodes. Nano Lett 2023. [PMID: 37220025 DOI: 10.1021/acs.nanolett.3c00148] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
While the performance of metal halide perovskite light-emitting diodes (PeLEDs) has rapidly improved in recent years, their stability remains a bottleneck to commercial realization. Here, we show that the thermal stability of polymer hole-transport layers (HTLs) used in PeLEDs represents an important factor influencing the external quantum efficiency (EQE) roll-off and device lifetime. We demonstrate a reduced EQE roll-off, a higher breakdown current density of approximately 6 A cm-2, a maximum radiance of 760 W sr-1 m-2, and a longer device lifetime for PeLEDs using polymer HTLs with high glass-transition temperatures. Furthermore, for devices driven by nanosecond electrical pulses, a record high radiance of 1.23 MW sr-1 m-2 and an EQE of approximately 1.92% at 14.6 kA cm-2 are achieved. Thermally stable polymer HTLs enable stable operation of PeLEDs that can sustain more than 11.7 million electrical pulses at 1 kA cm-2 before device failure.
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Affiliation(s)
- Lianfeng Zhao
- Department of Electrical and Computer Engineering, Princeton University, Princeton, New Jersey 08544, United States
- Holcombe Department of Electrical and Computer Engineering, Clemson University, Clemson, South Carolina 29634, United States
| | - Daniel D Astridge
- Department of Chemistry, Colorado School of Mines, Golden, Colorado 80401, United States
| | - William B Gunnarsson
- Department of Electrical and Computer Engineering, Princeton University, Princeton, New Jersey 08544, United States
| | - Zhaojian Xu
- Department of Electrical and Computer Engineering, Princeton University, Princeton, New Jersey 08544, United States
| | - Jisu Hong
- Department of Electrical and Computer Engineering, Princeton University, Princeton, New Jersey 08544, United States
| | - Jonathan Scott
- Department of Electrical and Computer Engineering, Princeton University, Princeton, New Jersey 08544, United States
| | - Sara Kacmoli
- Department of Electrical and Computer Engineering, Princeton University, Princeton, New Jersey 08544, United States
| | - Khaled Al Kurdi
- School of Chemistry and Biochemistry and Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Stephen Barlow
- School of Chemistry and Biochemistry and Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
- Renewable and Sustainable Energy Institute, University of Colorado Boulder, Boulder, Colorado 80303, United States
| | - Seth R Marder
- School of Chemistry and Biochemistry and Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
- Renewable and Sustainable Energy Institute, University of Colorado Boulder, Boulder, Colorado 80303, United States
- Department of Chemical and Biological Engineering, Department of Chemistry, and Materials Science and Engineering Program, University of Colorado Boulder, Boulder, Colorado 80303, United States
| | - Claire F Gmachl
- Department of Electrical and Computer Engineering, Princeton University, Princeton, New Jersey 08544, United States
| | - Alan Sellinger
- Department of Chemistry, Colorado School of Mines, Golden, Colorado 80401, United States
- Materials Science Program, Colorado School of Mines, Golden, Colorado 80401, United States
- National Renewable Energy Laboratory, Golden, Colorado 80401, United States
| | - Barry P Rand
- Department of Electrical and Computer Engineering, Princeton University, Princeton, New Jersey 08544, United States
- Andlinger Center for Energy and the Environment, Princeton University, Princeton, New Jersey 08544, United States
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Gunnarsson WB, Xu Z, Noel NK, Rand BP. Improved Charge Balance in Green Perovskite Light-Emitting Diodes with Atomic-Layer-Deposited Al 2O 3. ACS Appl Mater Interfaces 2022; 14:34247-34252. [PMID: 35353475 DOI: 10.1021/acsami.2c00860] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Perovskite light-emitting diodes (LEDs) have experienced a rapid increase in efficiency over the last several years and are now regarded as promising low-cost devices for displays and communication systems. However, it is often challenging to employ ZnO, a well-studied electron transport material, in perovskite LEDs due to chemical instability at the ZnO/perovskite interface and charge injection imbalance caused by the relatively high conductivity of ZnO. In this work, we address these problems by depositing an ultrathin Al2O3 interlayer at the ZnO/perovskite interface, allowing the fabrication of green-emitting perovskite LEDs with a maximum luminance of 21 815 cd/m2. Using atomic layer deposition, we can precisely control the Al2O3 thickness and thus fine-tune the electron injection from ZnO, allowing us to enhance the efficiency and operational stability of our LEDs.
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Affiliation(s)
- William B Gunnarsson
- Department of Electrical and Computer Engineering, Princeton University, Princeton, New Jersey 08544, United States
| | - Zhaojian Xu
- Department of Electrical and Computer Engineering, Princeton University, Princeton, New Jersey 08544, United States
| | - Nakita K Noel
- Department of Electrical and Computer Engineering, Princeton University, Princeton, New Jersey 08544, United States
- Princeton Institute for the Science and Technology of Materials, Princeton University, Princeton, New Jersey 08544, United States
| | - Barry P Rand
- Department of Electrical and Computer Engineering, Princeton University, Princeton, New Jersey 08544, United States
- Andlinger Center for Energy and the Environment, Princeton University, Princeton, New Jersey 08544, United States
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