Enhancement and Broadening of the Internal Electric Field of Hole-Transport-Layer-Free Perovskite Solar Cells by Quantum Dot Interface Modification

Hole-transport-layer-free perovskite solar cells have attracted strong interest due to their simple structure and low cost, but charge recombination is serious. Built-in electric field engineering is an intrinsic driver to facilitate charge separation transport and improve the efficiency of photovoltaic devices. However, the enhancement of the built-in electric field strength is often accompanied by the narrowing of the space charge region, which becomes a key constraint to the performance improvement of the device. Here, we propose an effective regulation method, the component engineering of quantum dots, to enhance the strength of the built-in electric field and broaden the range of space charge. By using all inorganic CsPbBrxI3-x (x = 0, 1, 2, 3) quantum dot interface modification to passivate the defects of MAPbI3 perovskite films, the regulation law of quantum dot components on the work function of perovskite films was revealed, and the mechanism of their influence on the internal electric field intensity and space charge region distribution was further clarified, thereby fundamentally solving the serious problem of charge recombination. As directly observed by electron-beam-induced current (EBIC), the introduction of CsPbBr2I quantum dots can effectively enhance the interfacial electric field intensity, widening the space charge region from 160 to 430 nm. Moreover, the efficiency of the hole-free transport layer perovskite solar cells modified by CsPbBr2I quantum dots was also significantly enhanced by 1.5 times. This is an important guideline for electric field modulation and efficiency improvement within photovoltaic devices with other simplified structures.

An Experimental Study of Dislocation Dynamics in GaN

The dynamics of dislocations introduced through indentation or scratching at room temperature into a few GaN layers that were grown using the HVPE, MOCVD and ELOG methods and had different dislocation densities were studied via the electron-beam-induced current and cathodoluminescence methods. The effects of thermal annealing and electron beam irradiation on dislocation generation and multiplication were investigated. It is shown that the Peierls barrier for dislocation glide in GaN is essentially lower than 1 eV; thus, it is mobile even at room temperature. It is shown that the mobility of a dislocation in the state-of-the-art GaN is not entirely determined by its intrinsic properties. Rather, two mechanisms may work simultaneously: overcoming the Peierls barrier and overcoming localized obstacles. The role of threading dislocations as effective obstacles for basal plane dislocation glide is demonstrated. It is shown that under low-energy electron beam irradiation, the activation energy for the dislocation glide decreases to a few tens of meV. Therefore, under e-beam irradiation, the dislocation movement is mainly controlled by overcoming localized obstacles.

Electrical and Recombination Properties of Polar Orthorhombic κ-Ga2O3 Films Prepared by Halide Vapor Phase Epitaxy

In this study, the structural and electrical properties of orthorhombic κ-Ga₂O₃ films prepared using Halide Vapor Phase Epitaxy (HVPE) on AlN/Si and GaN/sapphire templates were studied. For κ-Ga₂O₃/AlN/Si structures, the formation of two-dimensional hole layers in the Ga₂O₃ was studied and, based on theoretical calculations, was explained by the impact of the difference in the spontaneous polarizations of κ-Ga₂O₃ and AlN. Structural studies indicated that in the thickest κ-Ga₂O₃/GaN/sapphire layer used, the formation of rotational nanodomains was suppressed. For thick (23 μm and 86 μm) κ-Ga₂O₃ films grown on GaN/sapphire, the good rectifying characteristics of Ni Schottky diodes were observed. In addition, deep trap spectra and electron beam-induced current measurements were performed for the first time in this polytype. These experiments show that the uppermost 2 µm layer of the grown films contains a high density of rather deep electron traps near E_c - 0.3 eV and E_c - 0.7 eV, whose presence results in the relatively high series resistance of the structures. The diffusion length of the excess charge carriers was measured for the first time in κ-Ga₂O₃. The film with the greatest thickness of 86 μm was irradiated with protons and the carrier removal rate was about 10 cm^-1, which is considerably lower than that for β-Ga₂O₃.

In Operando, Photovoltaic, and Microscopic Evaluation of Recombination Centers in Halide Perovskite-Based Solar Cells

The origin of the low densities of electrically active defects in Pb halide perovskite (HaP), a crucial factor for their use in photovoltaics, light emission, and radiation detection, remains a matter of discussion, in part because of the difficulty in determining these densities. Here, we present a powerful approach to assess the defect densities, based on electric field mapping in working HaP-based solar cells. The minority carrier diffusion lengths were deduced from the electric field profile, measured by electron beam-induced current (EBIC). The EBIC method was used earlier to get the first direct evidence for the n-i-p junction structure, at the heart of efficient HaP-based PV cells, and later by us and others for further HaP studies. This manuscript includes EBIC results on illuminated cell cross sections (in operando) at several light intensities to compare optoelectronic characteristics of different cells made by different groups in several laboratories. We then apply a simple, effective single-level defect model that allows deriving the densities (N_r) of the defect acting as recombination center. We find N_r ≈ 1 × 10¹³ cm^-3 for mixed A cation lead bromide-based HaP films and ∼1 × 10¹⁴ cm^-3 for MAPbBr₃(Cl). As EBIC photocurrents are similar at the grain bulk and boundaries, we suggest that the defects are at the interfaces with selective contacts rather than in the HaP film. These results are relevant for photovoltaic devices as the EBIC responses distinguish clearly between high- and low-efficiency devices. The most efficient devices have n-i-p structures with a close-to-intrinsic HaP film, and the selective contacts then dictate the electric field strength throughout the HaP absorber.

Enhancing the NIR Photocurrent in Single GaAs Nanowires with Radial p-i-n Junctions by Uniaxial Strain

III-V compound nanowires have electrical and optical properties suitable for a wide range of applications, including photovoltaics and photodetectors. Furthermore, their elastic nature allows the use of strain engineering to enhance their performance. Here we have investigated the effect of mechanical strain on the photocurrent and the electrical properties of single GaAs nanowires with radial p-i-n junctions, using a nanoprobing setup. A uniaxial tensile strain of 3% resulted in an increase in photocurrent by more than a factor of 4 during NIR illumination. This effect is attributed to a decrease of 0.2 eV in nanowire bandgap energy, revealed by analysis of the current-voltage characteristics as a function of strain. This analysis also shows how other properties are affected by the strain, including the nanowire resistance. Furthermore, electron-beam-induced current maps show that the charge collection efficiency within the nanowire is unaffected by strain measured up to 0.9%.

Thermally propagated Al contacts on SiGe nanowires characterized by electron beam induced current in a scanning transmission electron microscope

Here, we use electron beam induced current (EBIC) in a scanning transmission electron microscope to characterize the structure and electronic properties of Al/SiGe and Al/Si-rich/SiGe axial nanowire heterostructures fabricated by thermal propagation of Al in a SiGe nanowire. The two heterostructures behave as Schottky contacts with different barrier heights. From the sign of the beam induced current collected at the contacts, the intrinsic semiconductor doping is determined to be n-type. Furthermore, we find that the silicon-rich double interface presents a lower barrier height than the atomically sharp SiGe/Al interface. With an applied bias, the Si-rich region delays the propagation of the depletion region and presents a reduced free carrier diffusion length with respect to the SiGe nanowire. This behaviour could be explained by a higher residual doping in the Si-rich area. These results demonstrate that scanning transmission electron microscopy EBIC is a powerful method for mapping and quantifying electric fields in micrometer- and nanometer-scale devices.

Wafer-Scale Synthesis and Optical Characterization of InP Nanowire Arrays for Solar Cells

Nanowire solar cells have the potential to reach the same efficiencies as the world-record III-V solar cells while using a fraction of the material. For solar energy harvesting, large-area nanowire solar cells have to be processed. In this work, we demonstrate the synthesis of epitaxial InP nanowire arrays on a 2 inch wafer. We define five array areas with different nanowire diameters on the same wafer. We use a photoluminescence mapper to characterize the sample optically and compare it to a homogeneously exposed reference wafer. Both steady-state and time-resolved photoluminescence maps are used to study the material's quality. From a mapping of reflectance spectra, we simultaneously extract the diameter and length of the nanowires over the full wafer. The extracted knowledge of large-scale nanowire synthesis will be crucial for the upscaling of nanowire-based solar cells, and the demonstrated wafer-scale characterization methods will be central for quality control during manufacturing.

Effect of Surface Texture on Pinhole Formation in SiOx-Based Passivated Contacts for High-Performance Silicon Solar Cells

High-efficiency silicon solar cells rely on some form of passivating contact structure to reduce recombination losses at the crystalline silicon surface and losses at the metal/Si contact interface. One such structure is polycrystalline silicon (poly-Si) on oxide, where heavily doped poly-Si is deposited on a SiO_x layer grown directly on the crystalline silicon (c-Si) wafer. Depending on the thickness of the SiO_x layer, the charge carriers can cross this layer by tunneling (<2 nm SiO_x thickness) or by direct conduction through disruptions in the SiO_x, often referred to as pinholes, in thicker SiO_x layers (>2 nm). In this work, we study structures with tunneling- or pinhole-like SiO_x contacts grown on pyramidally textured c-Si wafers and expose variations in the SiO_x layer properties related to surface morphology using electron-beam-induced current (EBIC) imaging. Using EBIC, we identify and mark regions with potential pinholes in the SiO_x layer. We further perform high-resolution transmission electron microscopy on the same areas, thus allowing us to directly correlate locally enhanced carrier collection with variations in the structure of the SiO_x layer. Our results show that the pinholes in the SiO_x layer preferentially form in different locations based on the annealing conditions used to form the device. With greater understanding of these processes and by controlling the surface texture geometry, there is potential to control the size and spatial distribution of oxide disruptions in silicon solar cells with poly-Si on oxide-type contacts; usually, this is a random phenomenon on polished or planar surfaces. Such control will enable us to consistently produce high-efficiency devices with low recombination currents and low junction resistances using this contact structure.

Electron-Transparent Thermoelectric Coolers Demonstrated with Nanoparticle and Condensation Thermometry

More efficient thermoelectric devices would revolutionize refrigeration and energy production, and low-dimensional thermoelectric materials are predicted to be more efficient than their bulk counterparts. But nanoscale thermoelectric devices generate thermal gradients on length scales that are too small to resolve with traditional thermometry methods. Here we fabricate, using single-crystal bismuth telluride (Bi₂Te₃) and antimony/bismuth telluride (Sb_2-xBi_xTe₃) flakes exfoliated from commercially available bulk materials, functional thermoelectric coolers (TECs) that are only 100 nm thick. These devices are the smallest TECs ever demonstrated by a factor of 10⁴. After depositing indium nanoparticles to serve as nanothermometers, we measure the heating and cooling produced by the devices with plasmon energy expansion thermometry (PEET), a high-spatial-resolution, transmission electron microscopy (TEM)-based thermometry technique, demonstrating a ΔT = -21 ± 4 K from room temperature. We also establish proof-of-concept for condensation thermometry, a quantitative temperature-change mapping technique with a spatial precision of ≲300 nm.

Depth-dependent EBIC microscopy of radial-junction Si micropillar arrays

Recent advances in fabrication have enabled radial-junction architectures for cost-effective and high-performance optoelectronic devices. Unlike a planar PN junction, a radial-junction geometry maximizes the optical interaction in the three-dimensional (3D) structures, while effectively extracting the generated carriers via the conformal PN junction. In this paper, we report characterizations of radial PN junctions that consist of p-type Si micropillars created by deep reactive-ion etching (DRIE) and an n-type layer formed by phosphorus gas diffusion. We use electron-beam induced current (EBIC) microscopy to access the 3D junction profile from the sidewall of the pillars. Our EBIC images reveal uniform PN junctions conformally constructed on the 3D pillar array. Based on Monte-Carlo simulations and EBIC modeling, we estimate local carrier separation/collection efficiency that reflects the quality of the PN junction. We find the EBIC efficiency of the pillar array increases with the incident electron beam energy, consistent with the EBIC behaviors observed in a high-quality planar PN junction. The magnitude of the EBIC efficiency of our pillar array is about 70% at 10 kV, slightly lower than that of the planar device (≈ 81%). We suggest that this reduction could be attributed to the unpassivated pillar surface and the unintended recombination centers in the pillar cores introduced during the DRIE processes. Our results support that the depth-dependent EBIC approach is ideally suitable for evaluating PN junctions formed on micro/nanostructured semiconductors with various geometry.

Electron beam-induced current imaging with two-angstrom resolution

An electron microscope's primary beam simultaneously ejects secondary electrons (SEs) from the sample and generates electron beam-induced currents (EBICs) in the sample. Both signals can be captured and digitized to produce images. The off-sample Everhart-Thornley detectors that are common in scanning electron microscopes (SEMs) can detect SEs with low noise and high bandwidth. However, the transimpedance amplifiers appropriate for detecting EBICs do not have such good performance, which makes accessing the benefits of EBIC imaging at high-resolution relatively more challenging. Here we report lattice-resolution imaging via detection of the EBIC produced by SE emission (SEEBIC). We use an aberration-corrected scanning transmission electron microscope (STEM), and image both microfabricated devices and standard calibration grids.

Understanding InP Nanowire Array Solar Cell Performance by Nanoprobe-Enabled Single Nanowire Measurements

III-V solar cells in the nanowire geometry might hold significant synthesis-cost and device-design advantages as compared to thin films and have shown impressive performance improvements in recent years. To continue this development there is a need for characterization techniques giving quick and reliable feedback for growth development. Further, characterization techniques which can improve understanding of the link between nanowire growth conditions, subsequent processing, and solar cell performance are desired. Here, we present the use of a nanoprobe system inside a scanning electron microscope to efficiently contact single nanowires and characterize them in terms of key parameters for solar cell performance. Specifically, we study single as-grown InP nanowires and use electron beam induced current characterization to understand the charge carrier collection properties, and dark current-voltage characteristics to understand the diode recombination characteristics. By correlating the single nanowire measurements to performance of fully processed nanowire array solar cells, we identify how the performance limiting parameters are related to growth and/or processing conditions. We use this understanding to achieve a more than 7-fold improvement in efficiency of our InP nanowire solar cells, grown from a different seed particle pattern than previously reported from our group. The best cell shows a certified efficiency of 15.0%; the highest reported value for a bottom-up synthesized InP nanowire solar cell. We believe the presented approach have significant potential to speed-up the development of nanowire solar cells, as well as other nanowire-based electronic/optoelectronic devices.

Betavoltaic battery performance: Comparison of modeling and experiment

A verification of the Monte Carlo simulation software for the prediction of short circuit current value is carried out using the Ni-63 source with the activity of 2.7 mCi/cm² and converters based on Si p-i-n diodes and SiC and GaN Schottky diodes. A comparison of experimentally measured and calculated short circuit current values confirms the validity of the proposed modeling method, with the difference in the measured and calculated short circuit current values not exceeding 25% and the error in the predicted output power values being below 30%. Effects of the protective layer formed on the Ni-63 radioactive film and of the passivating film on the semiconductor converters on the energy deposited inside the converters are estimated. The maximum attainable betavoltaic cell parameters are estimated.

A Practical Example of GaN-LED Failure Cause Analysis by Application of Combined Electron Microscopy Techniques

In this paper, we report a failure case of blue LEDs returned from a field application, and propose a practical way to identify the physical and structural reasons for the observed malfunction by a combination of different electron microscope techniques. Cathodoluminescence imaging and electron beam induced current (EBIC) imaging are employed in order to visualize conductive paths through the device in conjunction with subsequent energy dispersive x-ray analysis (EDS), revealing a metal deposition along cracks in the semiconductor layer which short-circuit the device. We demonstrate that the electron beam induced current imaging, in conjunction with other microscopic and analytical techniques at µm scale, is a powerful combination for clearly resolving and visualizing the cause of failure in the GaN LED chip. However, this represents a case study of a real application, which may not have been generally observed in laboratory testing environment.

Investigation of Photovoltaic Properties of Single Core-Shell GaN/InGaN Wires

We report the investigation of the photovoltaic properties of core-shell GaN/InGaN wires. The radial structure is grown on m-plane {11̅00} facets of self-assembled c̅-axis GaN wires elaborated by metal-organic vapor phase epitaxy (MOVPE) on sapphire substrates. The conversion efficiency of wires with radial shell composed of thick In0.1Ga0.9N layers and of 30× In0.18Ga0.82N/GaN quantum wells are compared. We also investigate the impact of the contact nature and layout on the carrier collection and photovoltaic performances. The contact optimization results in an improved conversion efficiency of 0.33% and a fill factor of 83% under 1 sun (AM1.5G) on single wires with a quantum well-based active region. Photocurrent spectroscopy demonstrates that the response ascribed to the absorption of InGaN/GaN quantum wells appears at wavelengths shorter than 440 nm.

Direct Electronic Property Imaging of a Nanocrystal-Based Photovoltaic Device by Electron Beam-Induced Current via Scanning Electron Microscopy

Scanning electron microscopy (SEM) electron beam-induced current (EBIC) studies were performed on the cross-section of a nanocrystal-based hybrid bulk heterojunction photovoltaic device. Using these techniques, the short circuit carrier collection efficiencies are mapped with a better than 100 nm resolution. Electronically deficient and proficient regions within the photoactive layer are determined. The results show that only a fraction of the CdSe nanorod:P3HT layer (P3HT = poly-3(hexylthiophene)) at the Al cathode interface shows primary collection of charged carriers, in which the photoactivity decreases exponentially away from the interface. The recombination losses of the photoactive layer away from this interface prove that the limiting factor of the device is the inability for electrons to percolate between nanoparticles; to alleviate this problem, an interparticle network that conducts the electrons from one nanorod to the next must be established. Furthermore, the EBIC technique applied to the nanocrystalline device used in this study is the first measurement of its kind and can be applied toward other similar architectures.