1
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Yu Z, Tao R, Guo J, Feng S, Wang Y. Direct Growth of Low Thermal Conductivity WTe 2 Nanocrystalline Films on W Films. Nanomaterials (Basel) 2024; 14:401. [PMID: 38470732 DOI: 10.3390/nano14050401] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/05/2024] [Revised: 02/17/2024] [Accepted: 02/18/2024] [Indexed: 03/14/2024]
Abstract
WTe2 has attracted much attention because of its layered structure and special electronic energy band structure. However, due to the difficulty of evaporating the W element itself and the inactivity of the Te element, the obtained large-area WTe2 thin films are usually accompanied by many defects. In this paper, WTe2 nanocrystalline films were successfully prepared on quartz substrates using magnetron sputtering and chemical vapor deposition techniques. Various analytical techniques such as X-ray Diffraction, Raman spectra, X-ray Photoelectron Spectroscopy, Scanning Electron Microscope, and photoluminescence spectra are employed to analyze the crystal structure, composition, and morphology. The effects of different tellurization temperatures and tellurization times on the properties of WTe2 thin films were investigated. WTe2 nanocrystalline films with good crystallinity were obtained at 600 °C for 30 min. The thermal conductivity of the WTe2 films prepared under this condition was 1.173 Wm-1K-1 at 300 K, which is significantly higher than that of samples prepared using other methods.
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Affiliation(s)
- Zhisong Yu
- School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China
| | - Rong Tao
- School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China
| | - Jin Guo
- School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China
| | - Shiyi Feng
- School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China
| | - Yue Wang
- School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China
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2
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Zhang Y, Kamiya K, Yamamoto T, Sakano M, Yang X, Masubuchi S, Okazaki S, Shinokita K, Chen T, Aso K, Yamada-Takamura Y, Oshima Y, Watanabe K, Taniguchi T, Matsuda K, Sasagawa T, Ishizaka K, Machida T. Symmetry Engineering in Twisted Bilayer WTe 2. Nano Lett 2023; 23:9280-9286. [PMID: 37811843 DOI: 10.1021/acs.nanolett.3c02327] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/10/2023]
Abstract
The fabrication of artificial structures using a twisted van der Waals assembly has been a key technique for recent advancements in the research of two-dimensional (2D) materials. To date, various exotic phenomena have been observed thanks to the modified electron correlation or moiré structure controlled by the twist angle. However, the twisted van der Waals assembly has further potential to modulate the physical properties by controlling the symmetry. In this study, we fabricated twisted bilayer WTe2 and demonstrated that the twist angle successfully controls the spatial inversion symmetry and hence the spin splitting in the band structure. Our results reveal the further potential of a twisted van der Waals assembly, suggesting the feasibility of pursuing new physical phenomena in 2D materials based on the control of symmetry.
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Affiliation(s)
- Yijin Zhang
- Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
| | - Keisuke Kamiya
- Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
| | - Takato Yamamoto
- Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo, Tokyo, 113-8656, Japan
| | - Masato Sakano
- Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo, Tokyo, 113-8656, Japan
| | - Xiaohan Yang
- Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
| | - Satoru Masubuchi
- Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
| | - Shota Okazaki
- Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
| | - Keisuke Shinokita
- Institute of Advanced Energy, Kyoto University, Kyoto 611-0011, Japan
| | - Tongmin Chen
- School of Materials Science, Japan Advanced Institute of Science and Technology, Ishikawa 923-1292, Japan
| | - Kohei Aso
- School of Materials Science, Japan Advanced Institute of Science and Technology, Ishikawa 923-1292, Japan
| | - Yukiko Yamada-Takamura
- School of Materials Science, Japan Advanced Institute of Science and Technology, Ishikawa 923-1292, Japan
| | - Yoshifumi Oshima
- School of Materials Science, Japan Advanced Institute of Science and Technology, Ishikawa 923-1292, Japan
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Kazunari Matsuda
- Institute of Advanced Energy, Kyoto University, Kyoto 611-0011, Japan
| | - Takao Sasagawa
- Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
| | - Kyoko Ishizaka
- Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo, Tokyo, 113-8656, Japan
| | - Tomoki Machida
- Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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3
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Endres M, Kononov A, Arachchige HS, Yan J, Mandrus D, Watanabe K, Taniguchi T, Schönenberger C. Current-Phase Relation of a WTe 2 Josephson Junction. Nano Lett 2023; 23:4654-4659. [PMID: 37155691 DOI: 10.1021/acs.nanolett.3c01416] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
When a topological insulator is incorporated into a Josephson junction, the system is predicted to reveal the fractional Josephson effect with a 4π-periodic current-phase relation. Here, we report the measurement of a 4π-periodic switching current through an asymmetric SQUID, formed by the higher-order topological insulator WTe2. Contrary to the established opinion, we show that a high asymmetry in critical current and negligible loop inductance are not sufficient by themselves to reliably measure the current-phase relation. Instead, we find that our measurement is heavily influenced by additional inductances originating from the self-formed PdTex inside the junction. We therefore develop a method to numerically recover the current-phase relation of the system and find the 1.5 μm long junction to be best described in the short ballistic limit. Our results highlight the complexity of subtle inductance effects that can give rise to misleading topological signatures in transport measurements.
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Affiliation(s)
- Martin Endres
- Department of Physics, University of Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland
| | - Artem Kononov
- Department of Physics, University of Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland
| | - Hasitha Suriya Arachchige
- Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Jiaqiang Yan
- Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, United States
- Material Science and Technology Division, Oak Ridge Laboratory, Oak Ridge, Tennessee 37831, United States
| | - David Mandrus
- Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, United States
- Material Science and Technology Division, Oak Ridge Laboratory, Oak Ridge, Tennessee 37831, United States
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Christian Schönenberger
- Department of Physics, University of Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland
- Swiss Nanoscience Institute, University of Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland
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4
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Kowalczyk H, Biscaras J, Pistawala N, Harnagea L, Singh S, Shukla A. Gate and Temperature Driven Phase Transitions in Few-Layer MoTe 2. ACS Nano 2023; 17:6708-6718. [PMID: 36972180 DOI: 10.1021/acsnano.2c12610] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
MoTe2 has a stable hexagonal semiconducting phase (2H) as well as two semimetallic phases with monoclinic (1T') and orthorhombic (Td) structures. A structural change can thus be accompanied by a significant change in electronic transport properties. The two semimetallic phases are connected by a temperature driven transition and could exhibit topological properties. Here we make extensive Raman measurements as a function of layer thickness, temperature, and electrostatic doping on few layer 2H-MoTe2 and also on 1T'-MoTe2 and Td-WTe2. Recent work in MoTe2 has raised the possibility of a 2H-1T' transition through technology compatible pathways. It has been claimed that such a transition, of promise for device applications, is activated by electrostatic gating. We investigate this claim and find that few-layer tellurides are characterized by high mobility of Te ions, even in ambient conditions and especially through the variation of external parameters like electric field or temperature. These can generate Te clusters, vacancies at crystalline sites, and facilitate structural transitions. We however find that the purported 2H-1T' transition in MoTe2 cannot be obtained by a pure electrostatic field.
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Affiliation(s)
- Hugo Kowalczyk
- Sorbonne Université, Muséum National d'Histoire Naturelle, UMR CNRS 7590, Institut de Minéralogie, de Physique des Matériaux et de Cosmochimie, IMPMC, 75005 Paris, France
| | - Johan Biscaras
- Sorbonne Université, Muséum National d'Histoire Naturelle, UMR CNRS 7590, Institut de Minéralogie, de Physique des Matériaux et de Cosmochimie, IMPMC, 75005 Paris, France
| | - Nashra Pistawala
- Department of Physics, Indian Institute of Science Education and Research, Pune, Maharashtra 411008, India
| | - Luminita Harnagea
- Department of Physics, Indian Institute of Science Education and Research, Pune, Maharashtra 411008, India
| | - Surjeet Singh
- Department of Physics, Indian Institute of Science Education and Research, Pune, Maharashtra 411008, India
| | - Abhay Shukla
- Sorbonne Université, Muséum National d'Histoire Naturelle, UMR CNRS 7590, Institut de Minéralogie, de Physique des Matériaux et de Cosmochimie, IMPMC, 75005 Paris, France
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5
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Song X, Jian Y, Wang X, Chen J, Shan Q, Zhang S, Chen Z, Chen X, Zeng H. Hybrid mixed-dimensional WTe 2/CsPbI 3perovskite heterojunction for high-performance photodetectors. Nanotechnology 2023; 34:195201. [PMID: 36753757 DOI: 10.1088/1361-6528/acba1c] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/03/2022] [Accepted: 02/07/2023] [Indexed: 06/18/2023]
Abstract
Perovskites have showed significant potential for the application in photodetectors due to their outstanding electrical and optical properties. Integrating two-dimensional (2D) materials with perovskites can make full use of the high carrier mobility of 2D materials and strong light absorption of perovskite to realize excellent optoelectrical properties. Here, we demonstrate a photodetector based on the WTe2/CsPbI3heterostructure. The quenching and the shortened lifetime of photoluminescence (PL) for CsPbI3perovskite confirms the efficient charge transfer at the WTe2/CsPbI3heterojunction. After coupled with WTe2, the photoresponsivity of the CsPbI3photodetector is improved by almost two orders of magnitude due to the high-gain photogating effect. The WTe2/CsPbI3heterojunction photodetector reveals a large responsivity of 1157 A W-1and a high detectivity of 2.1 × 1013Jones. The results pave the way for the development of high-performance optoelectronic devices based on 2D materials/perovskite heterojunctions.
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Affiliation(s)
- Xiufeng Song
- MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
| | - Yuxuan Jian
- MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
| | - Xusheng Wang
- MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
| | - Jiawei Chen
- MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
| | - Qingsong Shan
- MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
| | - Shengli Zhang
- MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
| | - Zhanyang Chen
- Shangdong Gemei Tungsten & Molybdenum Material Co. LTD, Weihai 265222, People's Republic of China
| | - Xiang Chen
- MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
| | - Haibo Zeng
- MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
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6
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Abstract
We present a mechanism for unconventional superconductivity in doped band insulators, where short-ranged pairing interaction arises from Coulomb repulsion due to virtual interband or excitonic processes. Remarkably, electron pairing is found upon infinitesimal doping, giving rise to Bose–Einstein condensate (BEC)–Bardeen–Cooper–Schrieffer (BCS) crossover at low density. Our theory explains puzzling behaviors of superconductivity and predicts spin-triplet pairing in electron-doped ZrNCl and WTe2. Despite being of fundamental importance and potential interest for topological quantum computing, spin-triplet superconductors remain rare in solid state materials after decades of research. In this work, we present a three-particle mechanism for spin-triplet superconductivity in multiband systems, where an effective attraction between doped electrons is produced from the Coulomb repulsion via a virtual interband transition involving a third electron [V. Crépel, L. Fu, Sci. Adv. 7, eabh2233 (2021)]. Our theory is analytically controlled by an interband hybridization parameter and explicitly demonstrated in doped band insulators with the example of an extended Hubbard model. Our theory of exciton-mediated pairing reveals how, as a matter of principle, a two-particle bound state can arise from the strong electron repulsion upon doping, opening a viable path to Bose–Einstein condensate (BEC)–Bardeen–Cooper–Schrieffer (BCS) physics in solid state systems. In light of this theory, we propose that recently discovered dilute superconductors such as ZrNCl, WTe2, and moiré materials can be spin-triplet and compare the expected consequences of our theory with experimental data.
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7
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Zhou G, Gao H, Li J, He X, He Y, Li Y, Hao G. Water-assisted controllable growth of atomically thin WTe 2nanoflakes by chemical vapor deposition based on precursor design and substrate engineering strategies. Nanotechnology 2022; 33:175602. [PMID: 35008075 DOI: 10.1088/1361-6528/ac49c4] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/19/2021] [Accepted: 01/10/2022] [Indexed: 06/14/2023]
Abstract
WTe2nanostructures have intrigued much attention due to their unique properties, such as large non-saturating magnetoresistance, quantum spin Hall effect and topological surface state. However, the controllable growth of large-area atomically thin WTe2nanostructures remains a significant challenge. In the present work, we demonstrate the controllable synthesis of 1T' atomically thin WTe2nanoflakes (NFs) by water-assisted ambient pressure chemical vapor deposition method based on precursor design and substrate engineering strategies. The introduction of water during the growth process can generate a new synthesized route by reacting with WO3to form intermediate volatile metal oxyhydroxide. Using WO3foil as the growth precursor can drastically enhance the uniformity of as-prepared large-area 1T' WTe2NFs compared to WO3powders. Moreover, highly oriented WTe2NFs with distinct orientations can be obtained by using a-plane and c-plane sapphire substrates, respectively. Corresponding precursor design and substrate engineering strategies are expected to be applicable to other low dimensional transition metal dichalcogenides, which are crucial for the design of novel electronic and optoelectronic devices.
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Affiliation(s)
- Guoliang Zhou
- School of Physics and Optoelectronics and and Hunan Key Laboratory for Micro-Nano Energy Materials and Device, Xiangtan University, Xiangtan 411105, People's Republic of China
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, People's Republic of China
| | - Hui Gao
- School of Physics and Optoelectronics and and Hunan Key Laboratory for Micro-Nano Energy Materials and Device, Xiangtan University, Xiangtan 411105, People's Republic of China
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, People's Republic of China
| | - Jin Li
- School of Physics and Optoelectronics and and Hunan Key Laboratory for Micro-Nano Energy Materials and Device, Xiangtan University, Xiangtan 411105, People's Republic of China
| | - Xiaoyue He
- Materials Growth and Characterization Center, Songshan Lake Materials Laboratory, Dongguan 523808, People's Republic of China
| | - Yanbing He
- School of Physics and Optoelectronics and and Hunan Key Laboratory for Micro-Nano Energy Materials and Device, Xiangtan University, Xiangtan 411105, People's Republic of China
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, People's Republic of China
| | - Yan Li
- School of Physics and Optoelectronics and and Hunan Key Laboratory for Micro-Nano Energy Materials and Device, Xiangtan University, Xiangtan 411105, People's Republic of China
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, People's Republic of China
| | - Guolin Hao
- School of Physics and Optoelectronics and and Hunan Key Laboratory for Micro-Nano Energy Materials and Device, Xiangtan University, Xiangtan 411105, People's Republic of China
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, People's Republic of China
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8
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Song J, Kwon S, Hossain MD, Chen S, Li Z, Goddard WA. Reaction Mechanism and Strategy for Optimizing the Hydrogen Evolution Reaction on Single-Layer 1T' WSe 2 and WTe 2 Based on Grand Canonical Potential Kinetics. ACS Appl Mater Interfaces 2021; 13:55611-55620. [PMID: 34779617 DOI: 10.1021/acsami.1c14234] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Transition-metal dichalcogenides (TMDs) in the 1T' phase are known high-performance catalysts for hydrogen evolution reaction (HER). Many experimental and some theoretical studies report that vacant sites play an important role in the HER on the basal plane. To provide benchmark calculations for comparison directly with future experiments on TMDs to obtain a validated detailed understanding that can be used to optimize the performance and material, we apply a recently developed grand canonical potential kinetics (GCP-K) formulation to predict the HER at vacant sites on the basal plane of the 1T' structure of WSe2 and WTe2. The accuracy of GCP-K has recently been validated for single-crystal nanoparticles. Using the GCP-K formulation, we find that the transition-state structures and the concentrations of the four intermediates (0-3 H at the selenium or tellurium vacancy) change continuously as a function of the applied potential. The onset potential (at 10 mA/cm-2) is -0.53 V for WSe2 (experiment is -0.51 V) and -0.51 V for WTe2 (experiment is -0.57 V). We find multistep reaction mechanisms for H2 evolution from Volmer-Volmer-Tafel (VVT) to Volmer-Heyrovsky (VH) depending on the applied potential, leading to an unusual non-monotonic change in current density with the applied potential. For example, our detailed understanding of the reaction mechanism suggests a strategy to improve the catalytic performance significantly by alternating the applied potential periodically.
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Affiliation(s)
- Jie Song
- Materials and Process Simulation Center and Joint Center for Artificial Photosynthesis, California Institute of Technology, Pasadena, California 91125, United States
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Soonho Kwon
- Materials and Process Simulation Center and Joint Center for Artificial Photosynthesis, California Institute of Technology, Pasadena, California 91125, United States
| | - Md Delowar Hossain
- Materials and Process Simulation Center and Joint Center for Artificial Photosynthesis, California Institute of Technology, Pasadena, California 91125, United States
| | - Sheng Chen
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Zhenyu Li
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - William A Goddard
- Materials and Process Simulation Center and Joint Center for Artificial Photosynthesis, California Institute of Technology, Pasadena, California 91125, United States
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9
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Buchkov K, Todorov R, Terziyska P, Gospodinov M, Strijkova V, Dimitrov D, Marinova V. Anisotropic Optical Response of WTe 2 Single Crystals Studied by Ellipsometric Analysis. Nanomaterials (Basel) 2021; 11:2262. [PMID: 34578578 DOI: 10.3390/nano11092262] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/17/2021] [Revised: 08/19/2021] [Accepted: 08/27/2021] [Indexed: 11/23/2022]
Abstract
In this paper we report the crystal growth conditions and optical anisotropy properties of Tungsten ditelluride (WTe2) single crystals. The chemical vapor transport (CVT) method was used for the synthesis of large WTe2 crystals with high crystallinity and surface quality. These were structurally and morphologically characterized by means of X-ray diffraction, optical profilometry and Raman spectroscopy. Through spectroscopic ellipsometry analysis, based on the Tauc–Lorentz model, we identified a high refractive index value (~4) and distinct tri-axial anisotropic behavior of the optical constants, which opens prospects for surface plasmon activity, revealed by the dielectric function. The anisotropic physical nature of WTe2 shows practical potential for low-loss light modulation at the 2D nanoscale level.
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10
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Yang H, Zhao Y, Wen Q, Yang R, Liu Y, Li H, Zhai T. Single WTe 2 Sheet-Based Electrocatalytic Microdevice for Directly Detecting Enhanced Activity of Doped Electronegative Anions. ACS Appl Mater Interfaces 2021; 13:14302-14311. [PMID: 33733726 DOI: 10.1021/acsami.1c01091] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The high electrical conductivity of 1T'-WTe2 deserves particular attention and may show a high potential for hydrogen evolution reaction (HER) catalysis. However, the actual activity certainly does not match expectations, and the inferior HER activity is actually still ambiguous at the atomic level. Unraveling the underlying HER behaviors of 1T'-WTe2 will give rise to a new family of HER catalysts. Our structural analysis reveals that the inferior activity could result from insufficient charge density around the Te site and blocked adsorption channel at the W site, which cause too weak hydrogen adsorption. Herein, we fabricated a single WTe2 sheet-based electrocatalytic microdevice for directly extracting enhanced HER activity of doped electronegative F atoms. The overpotential at -10 mA cm-2 reduced to 0.27 V after F doping compared to 0.45 V for the original state. In situ electrochemical measurement and electrical tests on a single sheet indicate that doped F can regulate surface charge and hydrogen adsorption behavior. Furthermore, the theory simulation uncovers that the smaller atomic radius of F contributes to an empty coordination environment; meanwhile, strong electronegativity induces hydrogen adsorption. Thus, the ΔGH* at W sites around the doped F is as low as 0.18 eV. Synergistically modulating the charge properties and opening steric hindrance provides a new pathway to rationally construct electrocatalysts and beyond.
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Affiliation(s)
- Huan Yang
- State Key Laboratory of Materials Processing and Die & Mould Technology, and School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Yinghe Zhao
- State Key Laboratory of Materials Processing and Die & Mould Technology, and School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Qunlei Wen
- State Key Laboratory of Materials Processing and Die & Mould Technology, and School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Ruoou Yang
- State Key Laboratory of Materials Processing and Die & Mould Technology, and School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Youwen Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, and School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Huiqiao Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, and School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, and School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
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11
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Kononov A, Abulizi G, Qu K, Yan J, Mandrus D, Watanabe K, Taniguchi T, Schönenberger C. One-Dimensional Edge Transport in Few-Layer WTe 2. Nano Lett 2020; 20:4228-4233. [PMID: 32396010 PMCID: PMC7291355 DOI: 10.1021/acs.nanolett.0c00658] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
WTe2 is a layered transitional-metal dichalcogenide (TMD) with a number of intriguing topological properties. Recently, WTe2 has been predicted to be a higher-order topological insulator (HOTI) with topologically protected hinge states along the edges. The gapless nature of WTe2 complicates the observation of one-dimensional (1D) topological states in transport due to their small contribution relative to the bulk. Here, we study the behavior of the Josephson effect in magnetic field to distinguish edge from bulk transport. The Josephson effect in few-layer WTe2 reveals 1D states residing on the edges and steps. Moreover, our data demonstrates a combination of Josephson transport properties observed solely in another HOTI-bismuth, including Josephson transport over micrometer distances, extreme robustness in a magnetic field, and nonsinusoidal current-phase relation (CPR). Our observations strongly suggest the topological origin of the 1D states and that few-layer WTe2 is a HOTI.
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Affiliation(s)
- Artem Kononov
- Department
of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
- Institute
of Solid State Physics of the Russian Academy of Sciences - Chernogolovka, Moscow District, Academician Ossipyan
str. 2, Chernogolovka 142432, Russia
| | - Gulibusitan Abulizi
- Department
of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
| | - Kejian Qu
- Department
of Materials Science and Engineering, University
of Tennessee, Knoxville, Tennessee 37996, United States
| | - Jiaqiang Yan
- Department
of Materials Science and Engineering, University
of Tennessee, Knoxville, Tennessee 37996, United States
- Materials
Science and Technology Division, Oak Ridge
National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - David Mandrus
- Department
of Materials Science and Engineering, University
of Tennessee, Knoxville, Tennessee 37996, United States
- Materials
Science and Technology Division, Oak Ridge
National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Kenji Watanabe
- National
Institute for Material Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- National
Institute for Material Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Christian Schönenberger
- Department
of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
- Swiss Nanoscience
Institute, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
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12
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Huang C, Narayan A, Zhang E, Xie X, Ai L, Liu S, Yi C, Shi Y, Sanvito S, Xiu F. Edge superconductivity in multilayer WTe 2 Josephson junction. Natl Sci Rev 2020; 7:1468-1475. [PMID: 34691543 PMCID: PMC8288511 DOI: 10.1093/nsr/nwaa114] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/11/2020] [Revised: 05/21/2020] [Accepted: 05/21/2020] [Indexed: 11/14/2022] Open
Abstract
WTe2, as a type-II Weyl semimetal, has 2D Fermi arcs on the (001) surface in the bulk and 1D helical edge states in its monolayer. These features have recently attracted wide attention in condensed matter physics. However, in the intermediate regime between the bulk and monolayer, the edge states have not been resolved owing to its closed band gap which makes the bulk states dominant. Here, we report the signatures of the edge superconductivity by superconducting quantum interference measurements in multilayer WTe2 Josephson junctions and we directly map the localized supercurrent. In thick WTe2 ([Formula: see text], the supercurrent is uniformly distributed by bulk states with symmetric Josephson effect ([Formula: see text]). In thin WTe2 (10 nm), however, the supercurrent becomes confined to the edge and its width reaches up to [Formula: see text]and exhibits non-symmetric behavior [Formula: see text]. The ability to tune the edge domination by changing thickness and the edge superconductivity establishes WTe2 as a promising topological system with exotic quantum phases and a rich physics.
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Affiliation(s)
- Ce Huang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | | | - Enze Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Xiaoyi Xie
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Linfeng Ai
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Shanshan Liu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Changjiang Yi
- Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Youguo Shi
- Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Stefano Sanvito
- School of Physics, AMBER and CRANN Institute, Trinity College, Dublin 2, Ireland
| | - Faxian Xiu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
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13
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Jo NH, Wang LL, Orth PP, Bud'ko SL, Canfield PC. Magnetoelastoresistance in WTe 2: Exploring electronic structure and extremely large magnetoresistance under strain. Proc Natl Acad Sci U S A 2019; 116:25524-9. [PMID: 31792191 DOI: 10.1073/pnas.1910695116] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
Strain describes the deformation of a material as a result of applied stress. It has been widely employed to probe transport properties of materials, ranging from semiconductors to correlated materials. In order to understand, and eventually control, transport behavior under strain, it is important to quantify the effects of strain on the electronic bandstructure, carrier density, and mobility. Here, we demonstrate that much information can be obtained by exploring magnetoelastoresistance (MER), which refers to magnetic field-driven changes of the elastoresistance. We use this powerful approach to study the combined effect of strain and magnetic fields on the semimetallic transition metal dichalcogenide [Formula: see text] We discover that WTe2 shows a large and temperature-nonmonotonic elastoresistance, driven by uniaxial stress, that can be tuned by magnetic field. Using first-principle and analytical low-energy model calculations, we provide a semiquantitative understanding of our experimental observations. We show that in [Formula: see text], the strain-induced change of the carrier density dominates the observed elastoresistance. In addition, the change of the mobilities can be directly accessed by using MER. Our analysis also reveals the importance of a heavy-hole band near the Fermi level on the elastoresistance at intermediate temperatures. Systematic understanding of strain effects in single crystals of correlated materials is important for future applications, such as strain tuning of bulk phases and fabrication of devices controlled by strain.
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14
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Li Q, He C, Wang Y, Liu E, Wang M, Wang Y, Zeng J, Ma Z, Cao T, Yi C, Wang N, Watanabe K, Taniguchi T, Shao L, Shi Y, Chen X, Liang SJ, Wang QH, Miao F. Proximity-Induced Superconductivity with Subgap Anomaly in Type II Weyl Semi-Metal WTe 2. Nano Lett 2018; 18:7962-7968. [PMID: 30403355 DOI: 10.1021/acs.nanolett.8b03924] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Due to the nontrivial topological band structure in type II Weyl semi-metal tungsten ditelluride (WTe2), unconventional properties may emerge in its superconducting phase. While realizing intrinsic superconductivity has been challenging in the type II Weyl semi-metal WTe2, the proximity effect may open an avenue for the realization of superconductivity. Here, we report the observation of proximity-induced superconductivity with a long coherence length along the c axis in WTe2 thin flakes based on a WTe2/NbSe2 van der Waals heterostructure. Interestingly, we also observe anomalous oscillations of the differential resistance during the transition from the superconducting to the normal state. Theoretical calculations show excellent agreement with experimental results, revealing that such a subgap anomaly is the intrinsic property of WTe2 in superconducting state induced by the proximity effect. Our findings enrich the understanding of the superconducting phase of type II Weyl semi-metals and pave the way for their future applications in topological quantum computing.
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Affiliation(s)
- Qiao Li
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Chaocheng He
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Yaojia Wang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Erfu Liu
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Miao Wang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Yu Wang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Junwen Zeng
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Zecheng Ma
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Tianjun Cao
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Changjiang Yi
- Institute of Physics , Chinese Academy of Sciences , Beijing 100190 , China
| | | | - Kenji Watanabe
- National Institute for Materials Science , 1-1 Namiki Tsukuba , Ibaraki 305-0044 , Japan
| | - Takashi Taniguchi
- National Institute for Materials Science , 1-1 Namiki Tsukuba , Ibaraki 305-0044 , Japan
| | - Lubing Shao
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Youguo Shi
- Institute of Physics , Chinese Academy of Sciences , Beijing 100190 , China
| | | | - Shi-Jun Liang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Qiang-Hua Wang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Feng Miao
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
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15
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Rana KG, Dejene FK, Kumar N, Rajamathi CR, Sklarek K, Felser C, Parkin SSP. Thermopower and Unconventional Nernst Effect in the Predicted Type-II Weyl Semimetal WTe 2. Nano Lett 2018; 18:6591-6596. [PMID: 30241438 DOI: 10.1021/acs.nanolett.8b03212] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
WTe2 is one of a series of recently discovered high mobility semimetals, some of whose properties are characteristic of topological Dirac or Weyl metals. One of its most interesting properties is the unsaturated giant magnetoresistance that it exhibits at low temperatures. An important question is the degree to which this property can be ascribed to a conventional semimetallic model in which a highly compensated, high mobility metal exhibits large magnetoresistance. Here, we show that the longitudinal thermopower (Seebeck effect) of semimetallic WTe2 exfoliated flakes exhibits periodic sign changes about zero with increasing magnetic field that indicates distinct electron and hole Landau levels and nearly fully compensated electron and hole carrier densities. However, inconsistent with a conventional semimetallic picture, we find a rapid enhancement of the Nernst effect at low temperatures that is nonlinear in magnetic field, which is consistent with Weyl points in proximity to the Fermi energy. Hence, we demonstrate the role played by the Weyl character of WTe2 in its transport properties.
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Affiliation(s)
- K Gaurav Rana
- Max Planck Institute of Microstructure Physics , 06120 Halle (Saale) , Germany
| | - Fasil K Dejene
- Max Planck Institute of Microstructure Physics , 06120 Halle (Saale) , Germany
| | - Neeraj Kumar
- Max Planck Institute of Microstructure Physics , 06120 Halle (Saale) , Germany
| | | | - Kornelia Sklarek
- Max Planck Institute of Microstructure Physics , 06120 Halle (Saale) , Germany
| | - Claudia Felser
- Max Planck Institute for Chemical Physics of Solids , 01187 Dresden , Germany
| | - Stuart S P Parkin
- Max Planck Institute of Microstructure Physics , 06120 Halle (Saale) , Germany
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16
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Abstract
To realize a topological superconductor is one of the most attracting topics because of its great potential in quantum computation. In this study, we successfully intercalate potassium (K) into the van der Waals gap of type II Weyl semimetal WTe2 and discover the superconducting state in K xWTe2 through both electrical transport and scanning tunneling spectroscopy measurements. The superconductivity exhibits an evident anisotropic behavior. Moreover, we also uncover the coexistence of superconductivity and the positive magnetoresistance state. Structural analysis substantiates the negligible lattice expansion induced by the intercalation, therefore suggesting K-intercalated WTe2 still hosts the topological nontrivial state. These results indicate that the K-intercalated WTe2 may be a promising candidate to explore the topological superconductor.
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Affiliation(s)
- Li Zhu
- National Laboratory of Solid State Microstructures, School of Physics , Nanjing University , Nanjing 210093 , China
| | - Qi-Yuan Li
- National Laboratory of Solid State Microstructures, School of Physics , Nanjing University , Nanjing 210093 , China
| | - Yang-Yang Lv
- National Laboratory of Solid State Microstructures, Department of Materials Science and Engineering , Nanjing University , Nanjing 210093 , China
| | - Shichao Li
- National Laboratory of Solid State Microstructures, School of Physics , Nanjing University , Nanjing 210093 , China
| | - Xin-Yang Zhu
- National Laboratory of Solid State Microstructures, School of Physics , Nanjing University , Nanjing 210093 , China
| | - Zhen-Yu Jia
- National Laboratory of Solid State Microstructures, School of Physics , Nanjing University , Nanjing 210093 , China
| | - Y B Chen
- National Laboratory of Solid State Microstructures, School of Physics , Nanjing University , Nanjing 210093 , China
- Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Jinsheng Wen
- National Laboratory of Solid State Microstructures, School of Physics , Nanjing University , Nanjing 210093 , China
- Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Shao-Chun Li
- National Laboratory of Solid State Microstructures, School of Physics , Nanjing University , Nanjing 210093 , China
- Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
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17
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Huang C, Narayan A, Zhang E, Liu Y, Yan X, Wang J, Zhang C, Wang W, Zhou T, Yi C, Liu S, Ling J, Zhang H, Liu R, Sankar R, Chou F, Wang Y, Shi Y, Law KT, Sanvito S, Zhou P, Han Z, Xiu F. Inducing Strong Superconductivity in WTe 2 by a Proximity Effect. ACS Nano 2018; 12:7185-7196. [PMID: 29901987 DOI: 10.1021/acsnano.8b03102] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
The search for proximity-induced superconductivity in topological materials has generated widespread interest in the condensed matter physics community. The superconducting states inheriting nontrivial topology at interfaces are expected to exhibit exotic phenomena such as topological superconductivity and Majorana zero modes, which hold promise for applications in quantum computation. However, a practical realization of such hybrid structures based on topological semimetals and superconductors has hitherto been limited. Here, we report the strong proximity-induced superconductivity in type-II Weyl semimetal WTe2, in a van der Waals hybrid structure obtained by mechanically transferring NbSe2 onto various thicknesses of WTe2. When the WTe2 thickness ( tWTe2) reaches 21 nm, the superconducting transition occurs around the critical temperature ( Tc) of NbSe2 with a gap amplitude (Δp) of 0.38 meV and an unexpected ultralong proximity length ( lp) up to 7 μm. With the thicker 42 nm WTe2 layer, however, the proximity effect yields Tc ≈ 1.2 K, Δp = 0.07 meV, and a short lp of less than 1 μm. Our theoretical calculations, based on the Bogoliubov-de Gennes equations in the clean limit, predict that the induced superconducting gap is a sizable fraction of the NbSe2 superconducting one when tWTe2 is less than 30 nm and then decreases quickly as tWTe2 increases. This agrees qualitatively well with the experiments. Such observations form a basis in the search for superconducting phases in topological semimetals.
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Affiliation(s)
- Ce Huang
- State Key Laboratory of Surface Physics and Department of Physics , Fudan University , Shanghai 200433 , China
- Institute for Nanoelectronic Devices and Quantum Computing , Fudan University , Shanghai 200433 , China
| | - Awadhesh Narayan
- Materials Theory , ETH Zurich , Wolfgang-Pauli-Strasse 27 , CH 8093 Zurich , Switzerland
| | - Enze Zhang
- State Key Laboratory of Surface Physics and Department of Physics , Fudan University , Shanghai 200433 , China
- Institute for Nanoelectronic Devices and Quantum Computing , Fudan University , Shanghai 200433 , China
| | - Yanwen Liu
- State Key Laboratory of Surface Physics and Department of Physics , Fudan University , Shanghai 200433 , China
- Institute for Nanoelectronic Devices and Quantum Computing , Fudan University , Shanghai 200433 , China
| | - Xiao Yan
- State Key Laboratory of ASIC and System, Department of Microelectronics , Fudan University , Shanghai 200433 , China
| | - Jiaxiang Wang
- State Key Laboratory of Surface Physics and Department of Physics , Fudan University , Shanghai 200433 , China
- Institute for Nanoelectronic Devices and Quantum Computing , Fudan University , Shanghai 200433 , China
| | - Cheng Zhang
- State Key Laboratory of Surface Physics and Department of Physics , Fudan University , Shanghai 200433 , China
- Institute for Nanoelectronic Devices and Quantum Computing , Fudan University , Shanghai 200433 , China
| | - Weiyi Wang
- State Key Laboratory of Surface Physics and Department of Physics , Fudan University , Shanghai 200433 , China
- Institute for Nanoelectronic Devices and Quantum Computing , Fudan University , Shanghai 200433 , China
| | - Tong Zhou
- Department of Physics , The Hong Kong University of Science and Technology , Clear Water Bay , Hong Kong, China
| | - Changjiang Yi
- Institute of Physics and Beijing National Laboratory for Condensed Matter Physics , Chinese Academy of Sciences , Beijing 100190 , China
| | - Shanshan Liu
- State Key Laboratory of Surface Physics and Department of Physics , Fudan University , Shanghai 200433 , China
- Institute for Nanoelectronic Devices and Quantum Computing , Fudan University , Shanghai 200433 , China
| | - Jiwei Ling
- State Key Laboratory of Surface Physics and Department of Physics , Fudan University , Shanghai 200433 , China
- Institute for Nanoelectronic Devices and Quantum Computing , Fudan University , Shanghai 200433 , China
| | - Huiqin Zhang
- State Key Laboratory of Surface Physics and Department of Physics , Fudan University , Shanghai 200433 , China
- Institute for Nanoelectronic Devices and Quantum Computing , Fudan University , Shanghai 200433 , China
| | - Ran Liu
- State Key Laboratory of Surface Physics and Department of Physics , Fudan University , Shanghai 200433 , China
- Institute for Nanoelectronic Devices and Quantum Computing , Fudan University , Shanghai 200433 , China
| | - Raman Sankar
- Institute of Physics , Academia Sinica , Taipei 11529 , Taiwan, China
- Center for Condensed Matter Sciences , National Taiwan University , Taipei 10617 , Taiwan, China
| | - Fangcheng Chou
- Center for Condensed Matter Sciences , National Taiwan University , Taipei 10617 , Taiwan, China
- National Synchrotron Radiation Research Center , Hsinchu 30076 , Taiwan, China
- Taiwan Consortium of Emergent Crystalline Materials , Ministry of Science and Technology , Taipei 10622 , Taiwan, China
| | - Yihua Wang
- School of Physical Sciences , University of Chinese Academy of Sciences , Beijing 100190 , China
| | - Youguo Shi
- Institute of Physics and Beijing National Laboratory for Condensed Matter Physics , Chinese Academy of Sciences , Beijing 100190 , China
- School of Physical Sciences , University of Chinese Academy of Sciences , Beijing 100190 , China
| | - Kam Tuen Law
- Department of Physics , The Hong Kong University of Science and Technology , Clear Water Bay , Hong Kong, China
| | - Stefano Sanvito
- School of Physics, AMBER and CRANN Institute , Trinity College , Dublin 2 , Ireland
| | - Peng Zhou
- State Key Laboratory of ASIC and System, Department of Microelectronics , Fudan University , Shanghai 200433 , China
| | - Zheng Han
- Shenyang National Laboratory for Materials Science, Institute of Metal Research , Chinese Academy of Sciences , Shenyang 110016 , China
| | - Faxian Xiu
- School of Physical Sciences , University of Chinese Academy of Sciences , Beijing 100190 , China
- Collaborative Innovation Center of Advanced Microstructures , Nanjing 210093 , China
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18
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Tian W, Yu W, Liu X, Wang Y, Shi J. A Review of the Characteristics, Synthesis, and Thermodynamics of Type-II Weyl Semimetal WTe₂. Materials (Basel) 2018; 11:E1185. [PMID: 29996559 PMCID: PMC6073882 DOI: 10.3390/ma11071185] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/04/2018] [Revised: 07/06/2018] [Accepted: 07/06/2018] [Indexed: 12/12/2022]
Abstract
WTe₂ as a candidate of transition metal dichalcogenides (TMDs) exhibits many excellent properties, such as non-saturable large magnetoresistance (MR). Firstly, the crystal structure and characteristics of WTe₂ are introduced, followed by a summary of the synthesis methods. Its thermodynamic properties are highlighted due to the insufficient research. Finally, a comprehensive analysis and discussion are introduced to interpret the advantages, challenges, and future prospects. Some results are shown as follows. (1) The chiral anomaly, pressure-induced conductivity, and non-saturable large MR are all unique properties of WTe₂ that attract wide attention, but it is also a promising thermoelectric material that holds anisotropic ultra-low thermal conductivity (0.46 W·m−1·K−1). WTe₂ is expected to have the lowest thermal conductivity, owing to the heavy atom mass and low Debye temperature. (2) The synthesis methods influence the properties significantly. Although large-scale few-layer WTe₂ in high quality can be obtained by many methods, the preparation has not yet been industrialized, which limits its applications. (3) The thermodynamic properties of WTe₂ are influenced by temperature, scale, and lattice orientations. However, the in-plane anisotropy cannot be observed in the experiment, as the intrinsic property is suppressed by defects and boundary scattering. Overall, this work provides an opportunity to develop the applications of WTe₂.
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Affiliation(s)
- Wenchao Tian
- School of Electro-Mechanical Engineering, Xidian University, Number 2 Taibai South Road, Xi'an 710071, China.
| | - Wenbo Yu
- School of Electro-Mechanical Engineering, Xidian University, Number 2 Taibai South Road, Xi'an 710071, China.
| | - Xiaohan Liu
- School of Electro-Mechanical Engineering, Xidian University, Number 2 Taibai South Road, Xi'an 710071, China.
| | - Yongkun Wang
- School of Electro-Mechanical Engineering, Xidian University, Number 2 Taibai South Road, Xi'an 710071, China.
| | - Jing Shi
- School of Electro-Mechanical Engineering, Xidian University, Number 2 Taibai South Road, Xi'an 710071, China.
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19
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Li J, Hong M, Sun L, Zhang W, Shu H, Chang H. Enhanced Electrocatalytic Hydrogen Evolution from Large-Scale, Facile-Prepared, Highly Crystalline WTe 2 Nanoribbons with Weyl Semimetallic Phase. ACS Appl Mater Interfaces 2018; 10:458-467. [PMID: 29235847 DOI: 10.1021/acsami.7b13387] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Tungsten ditellurium (WTe2) is one of most important layered transition metal dichalcogenides (TMDs) and exhibits various prominent physical properties. All the present methods for WTe2 preparation need strict conditions such as high temperature or cannot be applied in large scale, which limits its practical applications. In addition, most studies on WTe2 focus on its physical properties, whereas its electrochemical properties are still illusive with little investigation. Here, we develop a facile and scalable two-step method to synthesize high-quality WTe2 nanoribbon crystals with 1T' Weyl semimetal phase for the first time. Highly crystalline 1T'-WTe2 nanoribbons can be obtained on a large scale through this two-step method. In addition, the electrochemical tests show that WTe2 nanoribbons exhibit smaller overpotential and much better hydrogen evolution reaction catalytic performance than other tungsten-based sulfide and selenide (WS2, WSe2) nanoribbons of same morphology and under same preparation conditions. WTe2 nanoribbons show a Tafel slope of 57 mV/dec, which is one of best values for TMD catalysts and about 2 and 4 times smaller than that for 2H-WS2 nanoribbons (135 mV/dec) and 2H-WSe2 nanoribbons (213 mV/dec), respectively. 1T'-WTe2 nanoribbons also show ultrahigh stability in 5000 cycles and 20 h at 10 mA/cm2. The better performance is attributed to high conductivity of semimetallic 1T'-phase-stable WTe2 nanoribbons with one or two order higher charge-transfer rate than normally semiconducting 2H-stable WS2 and WSe2 nanoribbons. These results open the door for electrochemical applications of Weyl semimetallic TMDs.
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Affiliation(s)
- Jie Li
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology , Wuhan 430074, China
| | - Meiling Hong
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology , Wuhan 430074, China
- College of Chemistry and Environmental Engineering, Wuhan Institute of Technology , Wuhan 430073, China
| | - Leijie Sun
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology , Wuhan 430074, China
| | - Wenfeng Zhang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology , Wuhan 430074, China
| | - Haibo Shu
- College of Optical and Electronic Technology, China Jiliang Univeristy , Hangzhou 310018, China
| | - Haixin Chang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology , Wuhan 430074, China
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20
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Lin CL, Arafune R, Liu RY, Yoshimura M, Feng B, Kawahara K, Ni Z, Minamitani E, Watanabe S, Shi Y, Kawai M, Chiang TC, Matsuda I, Takagi N. Visualizing Type-II Weyl Points in Tungsten Ditelluride by Quasiparticle Interference. ACS Nano 2017; 11:11459-11465. [PMID: 29061038 DOI: 10.1021/acsnano.7b06179] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Weyl semimetals (WSMs) are classified into two types, type I and II, according to the topology of the Weyl point, where the electron and hole pockets touch each other. Tungsten ditelluride (WTe2) has garnered a great deal of attention as a strong candidate to be a type-II WSM. However, the Weyl points for WTe2 are located above the Fermi level, which has prevented us from identifying the locations and the connection to the Fermi arc surface states by using angle-resolved photoemission spectroscopy. Here, we present experimental proof that WTe2 is a type-II WSM. We measured energy-dependent quasiparticle interference patterns with a cryogenic scanning tunneling microscope, revealing the position of the Weyl point and its connection with the Fermi arc surface states, in agreement with prior theoretical predictions. Our results provide an answer to this crucial question and stimulate further exploration of the characteristics of WSMs.
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Affiliation(s)
- Chun-Liang Lin
- Department of Advanced Materials Science, The University of Tokyo , 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
| | - Ryuichi Arafune
- International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science , 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Ro-Ya Liu
- Institute for Solid State Physics, The University of Tokyo , 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
| | - Masato Yoshimura
- Department of Advanced Materials Science, The University of Tokyo , 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
| | - Baojie Feng
- Institute for Solid State Physics, The University of Tokyo , 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
| | - Kazuaki Kawahara
- Department of Advanced Materials Science, The University of Tokyo , 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
| | - Zeyuan Ni
- Department of Materials Engineering, The University of Tokyo , 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
| | - Emi Minamitani
- Department of Materials Engineering, The University of Tokyo , 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
| | - Satoshi Watanabe
- Department of Materials Engineering, The University of Tokyo , 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
| | - Youguo Shi
- Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China
| | - Maki Kawai
- Department of Advanced Materials Science, The University of Tokyo , 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
| | - Tai-Chang Chiang
- Department of Physics, University of Illinois , Urbana, Illinois 61801, United States
| | - Iwao Matsuda
- Institute for Solid State Physics, The University of Tokyo , 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
| | - Noriaki Takagi
- Department of Advanced Materials Science, The University of Tokyo , 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
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Naylor CH, Parkin WM, Gao Z, Kang H, Noyan M, Wexler RB, Tan LZ, Kim Y, Kehayias CE, Streller F, Zhou YR, Carpick R, Luo Z, Park YW, Rappe AM, Drndić M, Kikkawa JM, Johnson ATC. Large-area synthesis of high-quality monolayer 1T'-WTe 2 flakes. 2d Mater 2017; 4:021008. [PMID: 29707213 PMCID: PMC5914533 DOI: 10.1088/2053-1583/aa5921] [Citation(s) in RCA: 35] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
Large-area growth of monolayer films of the transition metal dichalcogenides is of the utmost importance in this rapidly advancing research area. The mechanical exfoliation method offers high quality monolayer material but it is a problematic approach when applied to materials that are not air stable. One important example is 1T'-WTe2, which in multilayer form is reported to possess a large non saturating magnetoresistance, pressure induced superconductivity, and a weak antilocalization effect, but electrical data for the monolayer is yet to be reported due to its rapid degradation in air. Here we report a reliable and reproducible large-area growth process for obtaining many monolayer 1T'-WTe2 flakes. We confirmed the composition and structure of monolayer 1T'-WTe2 flakes using x-ray photoelectron spectroscopy, energy-dispersive x-ray spectroscopy, atomic force microscopy, Raman spectroscopy and aberration corrected transmission electron microscopy. We studied the time dependent degradation of monolayer 1T'-WTe2 under ambient conditions, and we used first-principles calculations to identify reaction with oxygen as the degradation mechanism. Finally we investigated the electrical properties of monolayer 1T'-WTe2 and found metallic conduction at low temperature along with a weak antilocalization effect that is evidence for strong spin-orbit coupling.
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Affiliation(s)
- Carl H Naylor
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104, United States of America
| | - William M Parkin
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104, United States of America
| | - Zhaoli Gao
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104, United States of America
- Department of Chemical and Biomolecular Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
| | - Hojin Kang
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104, United States of America
- Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Republic of Korea
| | - Mehmet Noyan
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104, United States of America
| | - Robert B Wexler
- The Makineni Theoretical Laboratories, Department of Chemistry, University of Pennsylvania, Philadelphia, PA 19104, United States of America
| | - Liang Z Tan
- The Makineni Theoretical Laboratories, Department of Chemistry, University of Pennsylvania, Philadelphia, PA 19104, United States of America
| | - Youngkuk Kim
- The Makineni Theoretical Laboratories, Department of Chemistry, University of Pennsylvania, Philadelphia, PA 19104, United States of America
| | - Christopher E Kehayias
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104, United States of America
| | - Frank Streller
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104, United States of America
| | - Yu Ren Zhou
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104, United States of America
| | - Robert Carpick
- Department of Mechanical Engineering and Applied Mechanics, University of Pennsylvania, Philadelphia, PA 19104, United States of America
| | - Zhengtang Luo
- Department of Chemical and Biomolecular Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
| | - Yung Woo Park
- Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Republic of Korea
| | - Andrew M Rappe
- The Makineni Theoretical Laboratories, Department of Chemistry, University of Pennsylvania, Philadelphia, PA 19104, United States of America
| | - Marija Drndić
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104, United States of America
| | - James M Kikkawa
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104, United States of America
| | - A T Charlie Johnson
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104, United States of America
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22
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Zhang E, Chen R, Huang C, Yu J, Zhang K, Wang W, Liu S, Ling J, Wan X, Lu HZ, Xiu F. Tunable Positive to Negative Magnetoresistance in Atomically Thin WTe 2. Nano Lett 2017; 17:878-885. [PMID: 28033014 DOI: 10.1021/acs.nanolett.6b04194] [Citation(s) in RCA: 22] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Transitional metal ditelluride WTe2 has been extensively studied owing to its intriguing physical properties like nonsaturating positive magnetoresistance and being possibly a type-II Weyl semimetal. While surging research activities were devoted to the understanding of its bulk properties, it remains a substantial challenge to explore the pristine physics in atomically thin WTe2. Here, we report a successful synthesis of mono- to few-layer WTe2 via chemical vapor deposition. Using atomically thin WTe2 nanosheets, we discover a previously inaccessible ambipolar behavior that enables the tunability of magnetoconductance of few-layer WTe2 from weak antilocalization to weak localization, revealing a strong electrical field modulation of the spin-orbit interaction under perpendicular magnetic field. These appealing physical properties unveiled in this study clearly identify WTe2 as a promising platform for exotic electronic and spintronic device applications.
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Affiliation(s)
- Enze Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University , Shanghai 200433, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China
| | - Rui Chen
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University , Shanghai 200433, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China
| | - Ce Huang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University , Shanghai 200433, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China
| | - Jihai Yu
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University , Nanjing 210093, China
| | - Kaitai Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University , Shanghai 200433, China
| | - Weiyi Wang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University , Shanghai 200433, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China
| | - Shanshan Liu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University , Shanghai 200433, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China
| | - Jiwei Ling
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University , Shanghai 200433, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China
| | - Xiangang Wan
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University , Nanjing 210093, China
| | - Hai-Zhou Lu
- Department of Physics, South University of Science and Technology of China , Shenzhen 518055, China
| | - Faxian Xiu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University , Shanghai 200433, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China
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23
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Zhou J, Liu F, Lin J, Huang X, Xia J, Zhang B, Zeng Q, Wang H, Zhu C, Niu L, Wang X, Fu W, Yu P, Chang TR, Hsu CH, Wu D, Jeng HT, Huang Y, Lin H, Shen Z, Yang C, Lu L, Suenaga K, Zhou W, Pantelides ST, Liu G, Liu Z. Large-Area and High-Quality 2D Transition Metal Telluride. Adv Mater 2017; 29. [PMID: 27859781 DOI: 10.1002/adma.201603471] [Citation(s) in RCA: 86] [Impact Index Per Article: 12.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/01/2016] [Revised: 09/19/2016] [Indexed: 05/17/2023]
Abstract
Large-area and high-quality 2D transition metal tellurides are synthesized by the chemical vapor deposition method. The as-grown WTe2 maintains two different stacking sequences in the bilayer, where the atomic structure of the stacking boundary is revealed by scanning transmission electron microscopy. The low-temperature transport measurements reveal a novel semimetal-to-insulator transition in WTe2 layers and an enhanced superconductivity in few-layer MoTe2 .
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Affiliation(s)
- Jiadong Zhou
- Centre for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Fucai Liu
- Centre for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Junhao Lin
- Materials Science and Technology Division, Oak Ridge National Lab, Oak Ridge, TN, 37831, USA
- Department of Physics and Astronomy, Vanderbilt University, Nashville, TN, 37235, USA
- National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, 305-8565, Japan
| | - Xiangwei Huang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Juan Xia
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Bowei Zhang
- Centre for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Qingsheng Zeng
- Centre for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Hong Wang
- Centre for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Chao Zhu
- Centre for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Lin Niu
- Centre for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Xuewen Wang
- Centre for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Wei Fu
- Centre for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Peng Yu
- Centre for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Tay-Rong Chang
- Department of Physics, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Chuang-Han Hsu
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, 117546, Singapore
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Di Wu
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, 117546, Singapore
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Horng-Tay Jeng
- Department of Physics, National Tsing Hua University, Hsinchu, 30013, Taiwan
- Institute of Physics, Academia Sinica, Taipei, 11529, Taiwan
| | - Yizhong Huang
- Centre for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Hsin Lin
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, 117546, Singapore
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Zexiang Shen
- Centre for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
- Centre for Disruptive Photonic Technologies, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Changli Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China
| | - Li Lu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China
| | - Kazu Suenaga
- National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, 305-8565, Japan
| | - Wu Zhou
- Materials Science and Technology Division, Oak Ridge National Lab, Oak Ridge, TN, 37831, USA
| | - Sokrates T Pantelides
- Materials Science and Technology Division, Oak Ridge National Lab, Oak Ridge, TN, 37831, USA
- Department of Physics and Astronomy, Vanderbilt University, Nashville, TN, 37235, USA
| | - Guangtong Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Zheng Liu
- Centre for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
- Centre for Micro-/Nano-electronics (NOVITAS), School of Electrical & Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
- CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, 50 Nanyang Drive, Border X Block, Level 6, Singapore, 637553, Singapore
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