Development and characterization of self-powered, highly sensitive optoelectronic device based on PVA-rGO nanofibers/n-Si

This study provided a promising way to fabricate low-cost and high-performance PVA-RGO nanofibers/n-Si heterojunction photodetector. For this purpose, the hybrid heterojunction with a very-high rectification ratio (2.4×106) was achieved by successfully coating PVA-RGO nanofibers on n-Si wafer by electrospinning method. When the electro-optical analysis of the fabricated heterojunction photodetector under visible light depending on the light intensity, UV and IR lights was examined in detail, it was observed that the photodetector exhibited both self-powered behavior and very high photo-response under each light sources. However, the highest optical performance was obtained under UV (365 nm) originated from PVA-RGO layer and IR (850 nm) light from both interfacial states between PVA-RGO nanofibers and Si and from Si layer. Under 365 nm UV light, the maximum performance values of R, D, ON/OFF ratio, NPDR and EQE (%) were obtained as 688 mA/W, 1.15×1015 Jones, 2.49×106, 8.28×1010 W-1 and 234%, respectively. .

Charge Management Enables Efficient Spontaneous Chromatic Adaptation Bipolar Photodetector

Solution-processed photodetectors have emerged as promising candidates for next-generation of visible-near infrared (vis-NIR) photodetectors. This is attributed to their ease of processing, compatibility with flexible substrates, and the ability to tune their detection properties by integrating complementary photoresponsive semiconductors. However, the limited performance continues to hinder their further development, primarily influenced by the difference of charge transport properties between perovskite and organic semiconductors. In this work, a perovskite-organic bipolar photodetectors (PDs) is introduced with multispectral responsivity, achieved by effectively managing charges in perovskite and a ternary organic heterojunction. The ternary heterojunction, incorporating a designed NIR guest acceptor, exhibits a faster charge transfer rate and longer carrier diffusion length than the binary heterojunction. By achieving a more balanced carrier dynamic between the perovskite and organic components, the PD achieves a low dark current of 3.74 nA cm-2 at -0.2 V, a fast response speed of <10 µs, and a detectivity of exceeding 1012 Jones. Furthermore, a bioinspired retinotopic system for spontaneous chromatic adaptation is achieved without any optical filter. This charge management strategy opens up possibilities for surpassing the limitations of photodetection and enables the realization of high-purity, compact image sensors with exceptional spatial resolution and accurate color reproduction.

Zero Dimensional-Two Dimensional Hybrid Photodetectors Using Multilayer MoS2 and Lead Halide Perovskite Quantum Dots with a Tunable Bandgap

We report high-performance 0D-2D hybrid photodetectors integrated with tunable band gap perovskite (CsPbI₃, Cs_XFA_X-1PbI₃, and FAPbI₃) quantum dots and MOCVD-grown bilayer MoS₂. In our hybrid structure, the lead halide PQDs can be utilized as an absorbing layer of light of specific wavelengths and transfer the photogenerated carriers to the MoS₂ transport layer. With tunable wavelength lead halide PQDs, the 0D-2D hybrid photodetector shows a high responsivity up to 10⁷ AW^-1 and high specific detectivity exceeding 10¹³ Jones due to the difference in the built-in potential between PQDs and multilayer MoS₂ layers. This work proposes the possibility of fabricating high-performance photodetectors by hybridizing PQDs of various band gaps with 2D materials.

Tunable Performance of Quantum Dot-MoS2 Hybrid Photodetectors via Interface Engineering

Heterostructures of quantum dots (QDs) and two-dimensional (2D) materials show promising potential for photodetection applications owing to their combination of high optical absorption and good in-plane carrier mobility. In this work, the performance of QD-2D photodetectors is tuned by band engineering. Devices are fabricated by coating MoS₂ nanosheets with InP QDs, type-I core-shell InP/ZnS QDs, and type-II core-shell InP/CdS QDs. Comparative spectroscopic and photoelectric studies of different hybrids show that the energy band alignment and shell thickness can influence the efficiency of charge transfer (CT), energy transfer (ET), and defect-related processes between QDs and MoS₂. Benefiting from efficient CT between the QDs and MoS₂, a significant enhancement of responsivity and detectivity is observed in thick-shell InP/CdS QD-MoS₂ devices. Our results demonstrate the feasibility of using core-shell QDs for regulating the ET and CT efficiency in heterostructures and highlight the importance of interface band design in QD-2D and other low-dimensional photodetectors.

Optical modulation frequency mediated tunable response time and responsivity in graphene-PbS QD based hybrid photodetectors

Graphene/lead sulfide (PbS) quantum dot (QD) hybrid infrared photodetectors have gained a lot of attention in recent times due to their high resolution and cost effective fabrication process. In spite of exhibiting remarkably high responsivity, such hybrid detectors are slow as a result of their internal gain mechanism process. In this work, we present a convenient strategy to modulate the correlation between their responsivity and response time giving access to high resolution fast photodetectors in the broadband wavelength range for imaging purpose. Using a layer-by-layer deposition technique including simultaneous ligand exchange and surface passivation at each layer, homogeneous PbS QD films on chemical vapour deposition grown single layer graphene could be achieved. The obtained hybrid phototransistors exhibit a high responsivity of 10⁸A W^-1and sensitivity down to 0.1 pW incident light power in the near-infrared wavelength range. By modulating the incident light at a modulation frequency up to 50 kHz, we achieve a response time as low as 5μs while preserving a much higher responsivity (144 A W^-1) compared to existing commercial room temperature infrared photodetectors.

Superionic Modulation of Polymethylmethacrylate-Assisted Suspended Few-Layer Graphene Nanocomposites for High-Performance Photodetectors

Graphene is receiving significant attention for use in optoelectronic devices because it exhibits a wide range of desirable electrical properties. Although modified graphene that is fabricated on quantum dots (or similar integration strategies) has shown promise, it has not met the requirements for high-speed applications and highly sensitive detection. Herein, we report ion-modulated graphene composite nanostructures that were incorporated into photodetectors. We focus on the dynamical properties of the novel photodetectors, and they exhibit extraordinary photoelectric performances (photoresponsivity ∼1 A/W, response time ∼100 μs) over a broad range of wavelengths from 405 to 1064 nm (the maximum external quantum efficiency is greater than 300% at 635 nm with a 10 kHz chopping frequency). A theoretical model is proposed in this paper, and it is in good agreement with our experimental results. The dynamic analyses further confirmed the dissociation and recombination of ion-electron bound states to be responsible for the fast and sensitive photoresponse from the composite samples. Although ion-modulated optoelectronic nanomaterials are rarely studied, they require further exploration as they offer new insights and alternatives in nanomaterial research.

Interface Engineering To Boost Photoresponse Performance of Self-Powered, Broad-Bandwidth PEDOT:PSS/Si Heterojunction Photodetector

Organic-inorganic hybrid heterojunctions are poised to push toward novel optoelectronics applications, such as photodetectors, but significant challenges complicating practical use remain. Although all organic based photodetectors have been reported with great success, their potential in high-speed, broadband, self-powered photodetectors have not been fully explored. Herein, a self-powered, broad bandwidth of photodetector based on

PEDOT

PSS/Si heterojunction is built by a facial low temperature spin-coating method. By interface engineering of heterojunction with optimal band alignment and heteromicrostructures, enhanced photoresponse performances are obtained. The bandwidth of the hybrid photodetector could be broadened by 10 kHz after interfacial passivation by a methyl group. Further manipulating the geometrical structure of the hybrid heterojunction with silicon nanowire, a broad spectrum response from 300 to 1100 nm, with bandwidth as high as 40.6 kHz, fast response speed of 2.03 μs and high detection of 4.1 × 10(11) Jones under zero bias was achieved. Meanwhile, the close dependence between the photoresponse performance of heterojunctions and Si nanowire length is observed in the top-coverage configuration. Finally, a coverage effects model is proposed based on the competition of Si bulk and surface recombination, which is also confirmed by the designed bottom-coverage experiment. The mechanisms behind the enhanced photoresponse of the hybrid photodetector is attributed to the optimum band alignment, as well as the optimum balance of carrier dissociation and recombination of heterojunction. The scalable and low temperature method would be of great convenience for large-scale fabrication of the

PEDOT

PSS/Si hybrid photodetector.

Hybrid photodetector for single-molecule spectroscopy and microscopy

We report benchmark tests of a new single-photon counting detector based on a GaAsP photocathode and an electron-bombarded avalanche photodiode developed by Hamamatsu Photonics. We compare its performance with those of standard Geiger-mode avalanche photodiodes. We show its advantages for FCS due to the absence of after-pulsing and for fluorescence lifetime measurements due to its excellent time resolution. Its large sensitive area also greatly simplifies setup alignment. Its spectral sensitivity being similar to that of recently introduced CMOS SPADs, this new detector could become a valuable tool for single-molecule fluorescence measurements, as well as for many other applications.