Effect of Bias Potential on the Interface of a Solid Electrolyte and Electrode during XPS Depth Profiling Analysis

Depth profiling is an essential method to investigate the physical and chemical properties of a solid electrolyte and electrolyte/electrode interface. In conventional depth profiling, various spectroscopic tools such as X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) are utilized to monitor the chemical states along with ion bombardment to etch a sample. Nevertheless, the ion bombardment during depth profiling results in an inevitable systematic error, i.e., the accumulation of mobile ions at the electrolyte/electrode interface, known as the ion pile-up phenomenon. Here, we propose a novel method using bias potential, the substrate-bias method, to prevent the ion pile-up phenomena during depth profiling of a solid electrolyte. When the positive bias potential is applied on the substrate (electrode), the number of accumulating ions at the electrolyte/electrode interface is significantly reduced. The in-depth XPS analysis with the biased electrode reveals not only the suppression of the ion pile-up phenomena but also the altered chemical states at the interfacial region between the electrolyte and electrode depending on the bias. The proposed substrate-bias method can be a good alternative scheme for an efficient yet precise depth profiling technique for a solid electrolyte.

Spectromicroscopy Study of Induced Defects in Ion-Bombarded Highly Aligned Carbon Nanotubes

Highly aligned multi-wall carbon nanotubes were investigated with scanning electron microscopy (SEM), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) before and after bombardment performed using noble gas ions of different masses (argon, neon and helium), in an ultra-high-vacuum (UHV) environment. Ion irradiation leads to change in morphology, deformation of the carbon (C) honeycomb lattice and different structural defects in multi-wall carbon nanotubes. One of the major effects is the production of bond distortions, as determined by micro-Raman and micro-X-ray photoelectron spectroscopy. We observe an increase in sp3 distorted bonds at higher binding energy with respect to the expected sp2 associated signal of the carbon 1s core level, and increase in dangling bonds. Furthermore, the surface damage as determined by the X-ray photoelectron spectroscopy carbon 1s core level is equivalent upon bombarding with ions of different masses, while the impact and density of defects in the lattice of the MWCNTs as determined by micro-Raman are dependent on the bombarding ion mass; heavier for helium ions, lighter for argon ions. These results on the controlled increase in sp3 distorted bonds, as created on the multi-wall carbon nanotubes, open new functionalization prospects to improve and increase atomic hydrogen uptake on ion-bombarded multi-wall carbon nanotubes.

Ultralow-energy amorphization of contaminated silicon samples investigated by molecular dynamics

Ion beam processes related to focused ion beam milling, surface patterning, and secondary ion mass spectrometry require precision and control. Quality and cleanliness of the sample are also crucial factors. Furthermore, several domains of nanotechnology and industry use nanoscaled samples that need to be controlled to an extreme level of precision. To reduce the irradiation-induced damage and to limit the interactions of the ions with the sample, low-energy ion beams are used because of their low implantation depths. Yet, low-energy ion beams come with a variety of challenges. When such low energies are used, the residual gas molecules in the instrument chamber can adsorb on the sample surface and impact the ion beam processes. In this paper we pursue an investigation on the effects of the most common contaminant, water, sputtered by ultralow-energy ion beams, ranging from 50 to 500 eV and covering the full range of incidence angles, using molecular dynamics simulations with the ReaxFF potential. We show that the expected sputtering yield trends are maintained down to the lowest sputtering yields. A region of interest with low damage is obtained for incidence angles around 60° to 75°. We also demonstrate that higher energies induce a larger removal of the water contaminant and, at the same time, induce an increased amorphization, which leads to a trade-off between sample cleanliness and damage.

Highly Efficient Sequestration of Aqueous Lead on Nanostructured Calcite Substrates

Following defocused ion beam sputtering, large area highly corrugated and faceted nanoripples are formed on calcite (10.4) faces in a self-organized fashion. High resolution AFM imaging reveals that calcite ripples are defined by facets with highly kinked (11.0) and (2.12) terminations. In situ AFM imaging during the exposure of such modified calcite surfaces to PbCl2 aqueous solution reveals that the nanostructured calcite surface promotes the uptake of Pb. In addition, we observed the progressive smoothing of the highly reactive calcite facet terminations and the formation of Pb-bearing precipitates elongated in registry with the underlying nanopattern. By SEM-EDS analysis we quantified a remarkable 500% increase of the Pb uptake rate, up to 0.5 atomic weight % per hour, on the nanorippled calcite in comparison to its freshly cleaved (10.4) surfaces. These results suggest that nanostructurated calcite surfaces can be used for developing future systems for lead sequestration from polluted waters.

Toward Perfect Surfaces of Transition Metal Dichalcogenides with Ion Bombardment and Annealing Treatment

Layered transition metal dichalcogenides (TMDs) are two-dimensional materials exhibiting a variety of unique features with great potential for electronic and optoelectronic applications. The performance of devices fabricated with mono or few-layer TMD materials, nevertheless, is significantly affected by surface defects in the TMD materials. Recent efforts have been focused on delicate control of growth conditions to reduce the defect density, whereas the preparation of a defect-free surface remains challenging. Here, we show a counterintuitive approach to decrease surface defects on layered TMDs: a two-step process including Ar ion bombardment and subsequent annealing. With this approach, the defects, mainly Te vacancies, on the as-cleaved PtTe₂ and PdTe₂ surfaces were decreased by more than 99%, giving a defect density <1.0 × 10¹⁰ cm^-2, which cannot be achieved solely with annealing. We also attempt to propose a mechanism behind the processes.

Can One Series of Self-Organized Nanoripples Guide Another Series of Self-Organized Nanoripples during Ion Bombardment: From the Perspective of Power Spectral Density Entropy?

Ion bombardment (IB) is a promising nanofabrication tool for self-organized nanostructures. When ions bombard a nominally flat solid surface, self-organized nanoripples can be induced on the irradiated target surface, which are called intrinsic nanoripples of the target material. The degree of ordering of nanoripples is an outstanding issue to be overcome, similar to other self-organization methods. In this study, the IB-induced nanoripples on bilayer systems with enhanced quality are revisited from the perspective of guided self-organization. First, power spectral density (PSD) entropy is introduced to evaluate the degree of ordering of the irradiated nanoripples, which is calculated based on the PSD curve of an atomic force microscopy image (i.e., the Fourier transform of the surface height. The PSD entropy can characterize the degree of ordering of nanoripples). The lower the PSD entropy of the nanoripples is, the higher the degree of ordering of the nanoripples. Second, to deepen the understanding of the enhanced quality of nanoripples on bilayer systems, the temporal evolution of the nanoripples on the photoresist (PR)/antireflection coating (ARC) and Au/ARC bilayer systems are compared with those of single PR and ARC layers. Finally, we demonstrate that a series of intrinsic IB-induced nanoripples on the top layer may act as a kind of self-organized template to guide the development of another series of latent IB-induced nanoripples on the underlying layer, aiming at improving the ripple ordering. The template with a self-organized nanostructure may alleviate the critical requirement for periodic templates with a small period of ~100 nm. The work may also provide inspiration for guided self-organization in other fields.

Influence of Cr Ion Bombardment on the Growth of Cu Coatings Deposited by Magnetron Sputtering on ABS Substrates

Cu coatings were deposited on acrylonitrile-butadiene-styrene copolymer (ABS) substrates by DC magnetron sputtering with Cu target. Cr ions generated by arc evaporation were used to bombard the ABS substrates before the Cu coating process. The influences of the Cr ion bombardment on the surface topography and chemical bonds of the ABS substrates and the adhesion of the Cu coatings on the ABS substrate were studied using scanning electron microscopy, Fourier transform infrared spectroscopy, and micro-Scratch Tester as a function of bias voltage and treatment duration. The results show that the Cr ion bombardment causes Cr particles to embed in the surface. The Cr particles can interlock with the Cu coatings and ABS substrate and significantly improve the coating adhesion. In addition, the Cr particles can act as the nucleation sites of the Cu coatings and facilitate the growth of columnar crystals. Increasing the duration of Cr ion bombardment increases the number of Cr particles and, thus, enhances the adhesion. However, the continuous bombardment results in the degeneration of the ABS surface, causing the formation of the coarse columnar structure of the Cu coatings. Increasing the bias voltage can increase the energy of the Cr particles without causing degeneration of the ABS. The Cu coating deposited on the ABS substrate treated by Cr ion with high-bias voltage and short duration shows a dense and smooth growth structure. In contrast, the bombardment of the Cr ions carried out at high-bias voltage induces the formation of an interfacial layer (amorphous carbon-rich phase) in the ABS surface, which decreases the coating adhesion. It is believed that Cu coatings with strong adhesion and dense structures could be acquired on ABS substrates by optimizing the bias voltage and duration of the Cr ion bombardment pre-treatment.

Stability of Wafer-Scale Thin Films of Vertically Aligned Hexagonal BN Nanosheets Exposed to High-Energy Ions and Reactive Atomic Oxygen

Stability of advanced functional materials subjected to extreme conditions involving ion bombardment, radiation, or reactive chemicals is crucial for diverse applications. Here we demonstrate the excellent stability of wafer-scale thin films of vertically aligned hexagonal BN nanosheets (hBNNS) exposed to high-energy ions and reactive atomic oxygen representative of extreme conditions in space exploration and other applications. The hBNNS are fabricated catalyst-free on wafer-scale silicon, stainless steel, copper and glass panels at a lower temperature of 400 °C by inductively coupled plasma (ICP) assisted chemical vapor deposition (CVD) and subsequently characterized. The resistance of BNNS to high-energy ions was tested by immersing the samples into the plasma plume at the anode of a 150 W Hall Effect Thruster with BNNS films facing Xenon ions, revealing that the etching rate of BNNS is 20 times less than for a single-crystalline silicon wafer. Additionally, using O₂/Ar/H₂ plasmas to simulate the low Earth orbit (LEO) environment, it is demonstrated that the simulated plasma had very weak influence on the hBNNS surface structure and thickness. These results validate the strong potential of BNNS films for applications as protective, thermally conductive and insulating layers for spacecrafts, electric plasma satellite thrusters and semiconductor optoelectronic devices.

Enhancement of the Rashba Effect in a Conducting SrTiO3 Surface by MoO3 Capping

Systems having inherent structural asymmetry retain the Rashba-type spin-orbit interaction, which ties the spin and momentum of electrons in the band structure, leading to coupled spin and charge transport. One of the electrical manifestations of the Rashba spin-orbit interaction is nonreciprocal charge transport, which could be utilized for rectifying devices. Further tuning of the Rashba spin-orbit interaction allows additional functionalities in spin-orbitronic applications. In this work, we present our study of nonreciprocal charge transport in a conducting SrTiO3 (001) surface and its significant enhancement by a capping layer. The conductive strontium titanate SrTiO3 (STO) (001) surface was created through oxygen vacancies by Ar+ irradiation, and the nonreciprocal signal was probed by angle- and magnetic field-dependent second harmonic voltage measurement with an AC current. We observed robust directional transport in the Ar+-irradiated sample at low temperatures. The magnitude of the nonreciprocal signal is highly dependent on the irradiation time as it affects the depth of the conducting layer and the impact of the topmost conducting layer. Moreover, the nonreciprocal resistance was significantly enhanced by simply adding a MoO3 capping layer on the conductive STO surface. These results show a simple methodology for tuning and investigating the Rashba effect in a conductive STO surface, which could be adopted for various two-dimensional (2D) conducting layers for spin-orbitronic applications.

Influence of water contamination on the sputtering of silicon with low-energy argon ions investigated by molecular dynamics simulations

Focused ion beams (FIB) are a common tool in nanotechnology for surface analysis, sample preparation for electron microscopy and atom probe tomography, surface patterning, nanolithography, nanomachining, and nanoprinting. For many of these applications, a precise control of ion-beam-induced processes is essential. The effect of contaminations on these processes has not been thoroughly explored but can often be substantial, especially for ultralow impact energies in the sub-keV range. In this paper we investigate by molecular dynamics (MD) simulations how one of the most commonly found residual contaminations in vacuum chambers (i.e., water adsorbed on a silicon surface) influences sputtering by 100 eV argon ions. The incidence angle was changed from normal incidence to close to grazing incidence. For the simulation conditions used in this work, the adsorption of water favours the formation of defects in silicon by mixing hydrogen and oxygen atoms into the substrate. The sputtering yield of silicon is not significantly changed by the contamination, but the fraction of hydrogen and oxygen atoms that is sputtered largely depends on the incidence angle. This fraction is the largest for incidence angles between 70 and 80° defined with respect to the sample surface. Overall, it changes from 25% to 65%.

Nanoscale pattern formation on silicon surfaces bombarded with a krypton ion beam: experiments and simulations

The nanoscale patterns produced by bombardment of the (100) surface of silicon with a 2 keV Kr ion beam are investigated both experimentally and theoretically. In our experiments, we find that the patterns observed at high ion fluences depend sensitively on the angle of incidence Θ. For Θ values between 74° and 85°, we observe five decidedly different kinds of morphologies, including triangular nanostructures traversed by parallel-mode ripples, long parallel ridges decorated by short-wavelength ripples, and a remarkable mesh-like morphology. In contrast, only parallel-mode ripples are present for low ion fluences except for Θ = 85°. Our simulations show that triangular nanostructures that closely resemble those in our experiments emerge if a linearly dispersive term and a conserved Kuramoto-Sivashinsky nonlinearity are appended to the usual equation of motion. We find ridges traversed by ripples, on the other hand, in simulations of the Harrison-Pearson-Bradley equation (Harrisonet al2017Phys. Rev.E96032804). For Θ = 85°, the solid surface is apparently stable and simulations of an anisotropic Edwards-Wilkinson equation yield surfaces similar to those seen in our experiments. Explaining the other two kinds of patterns we find in our experiments remains a challenge for future theoretical work.

Enhancement of Electrical Properties of Sol-Gel Indium-Tin-Oxide Films by Microwave Irradiation and Plasma Treatment

We proposed the enhancement of the electrical properties of solution-processed indium–tin–oxide (ITO) thin films through microwave irradiation (MWI) and argon (Ar) gas plasma treatment. A cost- and time-effective heat treatment through MWI was applied as a post-deposition annealing (PDA) process to spin-coated ITO thin films. Subsequently, the sheet resistance of MWI ITO thin films was evaluated before and after plasma treatment. The change in the sheet resistance demonstrated that MWI PDA and Ar plasma treatment significantly improved the electrical properties of the ITO thin films. Furthermore, X-ray photoelectron spectroscopy and X-ray diffraction analyses showed that the electrical properties of the ITO thin films were enhanced by the increase in oxygen vacancies due to the ion bombardment effect of high-energy plasma ions during Ar plasma treatment. Changes in the band gap structure of the ITO thin film due to the ion bombardment effect were also analyzed. The combination of MWI PDA and Ar plasma treatment presents new possibilities for improving the high-conductivity sol–gel ITO electrode.

Enhancing the quality of self-organized nanoripples by Ar-ion bombardment of a bilayer system

Ion bombardment (IB) is a promising nanofabrication technique for producing nanoripples. A critical issue that restricts the application of IB is the limited quality of IB-induced nanoripples. Photoresist (PR) and antireflection coating (ARC) are of technological relevance for lithographic exposure processes. Moreover, to improve the quality of IB-induced self-organized nanoripples, in this study, a PR/ARC bilayer was bombarded at an incidence angle of 50°. The surface normalized defect density and power spectral density, obtained via scanning atomic force microscopy, indicate the superiority of the PR/ARC bilayer nanoripples over those of single PR or ARC layers. The growth mechanism of the improved nanoripples, deciphered via the temporal evolution of the morphology, involves the following processes: (i) formation of a well-grown IB-induced nanoripple prepattern on the PR, (ii) transfer of nanoripples from the PR to the ARC, forming an initial ARC nanoripple morphology for subsequent IB, and (iii) conversion of the initial nonuniform ARC nanoripples into uniform nanoripples. In this unique method, the angle of ion-incidence should be chosen so that ripples form on both PR and ARC films. Overall, this method facilitates nanoripple improvement, including prepattern fabrication for guiding nanoripple growth and sustainable nanoripple development via a single IB. Thus, the unique method presented in this study can aid in advancing academic research and also has potential applications in the field of IB-induced nanoripples.

Magnetic Structure of Ion-Beam Imprinted Stripe Domains Determined by Neutron Scattering

We present a detailed analysis of the in-plane magnetic vector configuration in head-to-head/tail-to-tail stripe domain patterns of nominal 5 μm width. The patterns have been created by He-ion bombardment induced magnetic patterning of a CoFe/IrMn₃ exchange bias thin-film system. Quantitative information about the chemical and magnetic structure is obtained from polarized neutron reflectometry (PNR) and off-specular scattering (OSS). The technique provides information on the magnetic vector orientation and magnitude along the lateral coordinate of the sample, as well as the chemical and magnetic layer structure as a function of depth. Additional sensitivity to magnetic features is obtained through a neutron wave field resonance, which is fully accounted for in the presented analysis. The scattering reveals a domain width imbalance of 5.3 to 3.7 μm of virgin and bombarded stripes, respectively. Further, we report that the magnetization in the bombarded stripe significantly deviates from the head-to-head arrangement. A domain wall of 0.6 μm with homogeneous magnetization direction is found to separate the two neighboring domains. The results contain detailed information on length scales and magnetization vectors provided by PNR and OSS in absolute units. We illustrate the complementarity of the technique to microscopy techniques for obtaining a quantitative description of imprinted magnetic domain patterns and illustrate its applicability to different sample systems.

Ionic Conductance through Graphene: Assessing Its Applicability as a Proton Selective Membrane

Inspired by recent reports on possible proton conductance through graphene, we have investigated the behavior of pristine graphene and defect engineered graphene membranes for ionic conductance and selectivity with the goal of evaluating a possibility of its application as a proton selective membrane. The averaged conductance for pristine chemical vapor deposited (CVD) graphene at pH1 is ∼4 mS/cm² but varies strongly due to contributions from the unavoidable defects in our CVD graphene. From the variations in the conductance with electrolyte strength and pH, we can conclude that pristine graphene is fairly selective and the conductance is mainly due to protons. Engineering of the defects with ion beam (He⁺, Ga⁺) irradiation and plasma (N₂ and H₂) treatment showed improved areal conductance with high proton selectivity mostly for He-ion beam and H₂ plasma treatments, which agrees with primarily vacancy-free type of defects produced in these cases confirmed by Raman analysis.

Tailoring Perpendicular Exchange Bias Coupling in Au/Co/NiO Systems by Ion Bombardment

Here, we systematically investigated the influence of ion bombardment with different fluences on the strength and direction of the exchange bias coupling in Au/Co/NiO systems with perpendicular magnetic anisotropy of the Co layer. We found that the direction of the exchange bias coupling can be reversed as a result of ion bombardment performed in an external magnetic field which is in the opposite direction to the magnetic field applied during film deposition. Moreover, the strength of the exchange bias coupling can be tailored by varying the ion fluence. These results show behaviors similar to the results found for systems of ferromagnetic layers with in-plane anisotropy. Our experimental work, supported by a two-energy-level model, demonstrates that exchange bias coupling can be tuned in a layered system with perpendicular magnetic anisotropy using ion bombardment.

Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies

Oxide and nitride thin-films of Ti, Hf, and Si serve numerous applications owing to the diverse range of their material properties. It is therefore imperative to have proper control over these properties during materials processing. Ion-surface interactions during plasma processing techniques can influence the properties of a growing film. In this work, we investigated the effects of controlling ion characteristics (energy, dose) on the properties of the aforementioned materials during plasma-enhanced atomic layer deposition (PEALD) on planar and 3D substrate topographies. We used a 200 mm remote PEALD system equipped with substrate biasing to control the energy and dose of ions by varying the magnitude and duration of the applied bias, respectively, during plasma exposure. Implementing substrate biasing in these forms enhanced PEALD process capability by providing two additional parameters for tuning a wide range of material properties. Below the regimes of ion-induced degradation, enhancing ion energies with substrate biasing during PEALD increased the refractive index and mass density of TiO _x and HfO _x and enabled control over their crystalline properties. PEALD of these oxides with substrate biasing at 150 °C led to the formation of crystalline material at the low temperature, which would otherwise yield amorphous films for deposition without biasing. Enhanced ion energies drastically reduced the resistivity of conductive TiN _x and HfN _x films. Furthermore, biasing during PEALD enabled the residual stress of these materials to be altered from tensile to compressive. The properties of SiO _x were slightly improved whereas those of SiN _x were degraded as a function of substrate biasing. PEALD on 3D trench nanostructures with biasing induced differing film properties at different regions of the 3D substrate. On the basis of the results presented herein, prospects afforded by the implementation of this technique during PEALD, such as enabling new routes for topographically selective deposition on 3D substrates, are discussed.

Silver Film Surface Modification by Ion Bombardment Decreases Surface Plasmon Resonance Absorption

Silver thin films covered with dielectric films serving as protective coatings are desired for telescope mirrors, but durable coatings have proved elusive. As part of an effort to develop long-lived protected-silver mirrors, silver thin films were deposited by electron beam evaporation using a physical vapor deposition system at the University of California Observatories Astronomical Coatings Lab. The silver films were later covered with a stack of dielectric films utilizing silicon nitride and titanium dioxide deposited by ion-assisted electron beam evaporation to fabricate protected mirrors. In-situ argon ion bombardment was introduced after silver deposition and prior to the deposition of dielectric films to assess its effects on the performance of the mirrors. We found that ion bombardment of the silver influenced surface morphology and reflectivity, and these effects correlated with time between silver deposition and ion bombardment. The overall reflectivity at wavelengths in the range of 350-800 nm was found to improve due to ion bombardment, which was qualitatively interpreted as a result of decreased surface plasmon resonance coupling. We suggest that the observed decrease in coupling is caused by silver grain boundary pinning due to ion bombardment suppressing silver surface diffusion, forming smoother silver-dielectric interfaces.

Enhanced Electrical Resistivity and Properties via Ion Bombardment of Ferroelectric Thin Films

A novel approach to on-demand improvement of electronic properties in complex-oxide ferroelectrics is demonstrated whereby ion bombardment - commonly used in classic semiconductor materials - is applied to the PbTiO₃ system. The result is deterministic reduction in leakage currents by 5 orders of magnitude, improved ferroelectric switching, and unprecedented insights into the nature of defects and intergap state evolution in these materials.

Numerical investigation of depth profiling capabilities of helium and neon ions in ion microscopy

The analysis of polymers by secondary ion mass spectrometry (SIMS) has been a topic of interest for many years. In recent years, the primary ion species evolved from heavy monatomic ions to cluster and massive cluster primary ions in order to preserve a maximum of organic information. The progress in less-damaging sputtering goes along with a loss in lateral resolution for 2D and 3D imaging. By contrast the development of a mass spectrometer as an add-on tool for the helium ion microscope (HIM), which uses finely focussed He+ or Ne+ beams, allows for the analysis of secondary ions and small secondary cluster ions with unprecedented lateral resolution. Irradiation induced damage and depth profiling capabilities obtained with these light rare gas species have been far less investigated than ion species used classically in SIMS. In this paper we simulated the sputtering of multi-layered polymer samples using the BCA (binary collision approximation) code SD_TRIM_SP to study preferential sputtering and atomic mixing in such samples up to a fluence of 1018 ions/cm2. Results show that helium primary ions are completely inappropriate for depth profiling applications with this kind of sample materials while results for neon are similar to argon. The latter is commonly used as primary ion species in SIMS. For the two heavier species, layers separated by 10 nm can be distinguished for impact energies of a few keV. These results are encouraging for 3D imaging applications where lateral and depth information are of importance.

Designing steep, sharp patterns on uniformly ion-bombarded surfaces

We propose and experimentally test a method to fabricate patterns of steep, sharp features on surfaces, by exploiting the nonlinear dynamics of uniformly ion-bombarded surfaces. We show via theory, simulation, and experiment that the steepest parts of the surface evolve as one-dimensional curves that move in the normal direction at constant velocity. The curves are a special solution to the nonlinear equations that arises spontaneously whenever the initial patterning on the surface contains slopes larger than a critical value; mathematically they are traveling waves (shocks) that have the special property of being undercompressive. We derive the evolution equation for the curves by considering long-wavelength perturbations to the one-dimensional traveling wave, using the unusual boundary conditions required for an undercompressive shock, and we show this equation accurately describes the evolution of shapes on surfaces, both in simulations and in experiments. Because evolving a collection of one-dimensional curves is fast, this equation gives a computationally efficient and intuitive method for solving the inverse problem of finding the initial surface so the evolution leads to a desired target pattern. We illustrate this method by solving for the initial surface that will produce a lattice of diamonds connected by steep, sharp ridges, and we experimentally demonstrate the evolution of the initial surface into the target pattern.

Optical probe for surface and subsurface defects induced by ion bombardment

We demonstrate that reflectance difference spectroscopy (RDS) is sensitive to defects induced by ion bombardment, located either in the topmost layer or in the subsurface region. Most importantly, these two kinds of defects can be spectrally discriminated, since the corresponding signatures in the RD spectrum arise from perturbations of different types of electronic states: The defects in the topmost surface layer mainly lead to a quenching of the optical anisotropy related to surface states, whereas the subsurface defects strongly affect the optical anisotropy originating from transitions between surface-modified bulk electronic states. Consequently, RDS can be used to simultaneously monitor the defects in the topmost surface layer and in the subsurface region in-situ during ion bombardment and thermal annealing. [Formula: see text] Characteristic RD spectra and the corresponding STM images for a Cu(110) substrate before and after healing of the subsurface defects.

Plasma-Assisted Synthesis of Carbon Nanotubes

The application of plasma-enhanced chemical vapour deposition (PECVD) in the production and modification of carbon nanotubes (CNTs) will be reviewed. The challenges of PECVD methods to grow CNTs include low temperature synthesis, ion bombardment effects and directional growth of CNT within the plasma sheath. New strategies have been developed for low temperature synthesis of single-walled CNTs based the understanding of plasma chemistry and modelling. The modification of CNT surface properties and synthesis of CNT hybrid materials are possible with the utilization of plasma.

Bombardment Induced Electron-Capture Processes at Sodium Halide Surfaces

Discrete features observed in the energy distribution of electrons emitted from ion-bombarded sodium halide surfaces can be attributed to a new type of collisional deexcitation mechanism. Such a mechanism involves sodium atoms in bombardment-excited autoionizing states that are the result of cascade collisions within the crystal lattice. This deexcitation process, in contrast to that for a metal, is not simply a consequence of the inner-shell lifetime of the initial collisionally excited sodium Na+* ion. Rather, the deexcitation consists of a sequence of lattice collisions during which the excited Na+* ion captures an electron to form the inner-shell-excited Na0* states responsible for the observed transitions. The formation of such autoionizing Na0* states is described within the framework of a new model in which excitation processes and localized collisional electron-transfer mechanisms are taken into account. These localized electron-transfer processes make possible new channels for electronic deexcitation, chemical dissociation, and defect production; they are critical for understanding inelastic ion-surface collisions in solids.

Studies of Ion Kinetic-Energy Distributions in the Gaseous Electronics Conference RF Reference Cell

A review is presented of kinetic-energy distribution measurements for ions striking grounded surfaces in a Gaseous Electronics Conference (GEC) rf Reference Cell. Two experimental arrangements that have been used to measure ion energies in the GEC Cell are described, and a comparison of their performance under different operating conditions is presented. Significant results from ion-energy analysis in the Reference Cell are highlighted, including evidence of effects due to surface conditions on ion sampling, verification of electrical behavior of the cell, inferences about ion-molecule reactions indicated by the shapes of measured ion kinetic-energy distributions (IEDs), and the use of measured IEDs for the validation of theoretical models. The paper concludes with a detailed study of IEDs measured for rf plasmas generated in mixtures of argon and oxygen, using both experimental arrangements.