In Situ Growth of Graphene on Polyimide for High-Responsivity Flexible PbS-Graphene Photodetectors

Graphene is an ideal material for flexible optoelectronic devices due to its excellent electrical and optical properties. However, the extremely high growth temperature of graphene has greatly limited the direct fabrication of graphene-based devices on flexible substrates. Here, we have realized in situ growth of graphene on a flexible polyimide substrate. Based on the multi-temperature-zone chemical vapor deposition cooperated with bonding a Cu-foil catalyst onto the substrate, the growth temperature of graphene was controlled at only 300 °C, enabling the structural stability of polyimide during growth. Thus, large-area high-quality monolayer graphene film was successfully in situ grown on polyimide. Furthermore, a PbS-graphene flexible photodetector was fabricated using the graphene. The responsivity of the device reached 10⁵ A/W with 792 nm laser illumination. The in-situ growth ensures good contact between graphene and substrate; therefore, the device performance can remain stable after multiple bending. Our results provide a highly reliable and mass-producible path for graphene-based flexible devices.

Effect of heteroepitaxial growth on LT-GaAs: ultrafast optical properties

Epitaxial low temperature grown GaAs (LT-GaAs) on silicon (LT-GaAs/Si) has the potential for terahertz (THz) photoconductive antenna applications. However, crystalline, optical and electrical properties of heteroepitaxial grown LT-GaAs/Si can be very different from those grown on semi-insulating GaAs substrates ('reference'). In this study, we investigate optical properties of an epitaxial grown LT-GaAs/Si sample, compared to a reference grown under the same substrate temperature, and with the same layer thickness. Anti-phase domains and some crystal misorientation are present in the LT-GaAs/Si. From coherent phonon spectroscopy, the intrinsic carrier densities are estimated to be 10¹⁵ cm^-3for either sample. Strong plasmon damping is also observed. Carrier dynamics, measured by time-resolved THz spectroscopy at high excitation fluence, reveals markedly different responses between samples. Below saturation, both samples exhibit the desired fast response. Under optical fluences ⩾54μJ cm^-2, the reference LT-GaAs layer shows saturation of electron trapping states leading to non-exponential behavior, but the LT-GaAs/Si maintains a double exponential decay. The difference is attributed to the formation of As-As and Ga-Ga bonds during the heteroepitaxial growth of LT-GaAs/Si, effectively leading to a much lower density of As-related electron traps.

The Growth of Graphene on Ni-Cu Alloy Thin Films at a Low Temperature and Its Carbon Diffusion Mechanism

Carbon solid solubility in metals is an important factor affecting uniform graphene growth by chemical vapor deposition (CVD) at high temperatures. At low temperatures, however, it was found that the carbon diffusion rate (CDR) on the metal catalyst surface has a greater impact on the number and uniformity of graphene layers compared with that of the carbon solid solubility. The CDR decreases rapidly with decreasing temperatures, resulting in inhomogeneous and multilayer graphene. In the present work, a Ni-Cu alloy sacrificial layer was used as the catalyst based on the following properties. Cu was selected to increase the CDR, while Ni was used to provide high catalytic activity. By plasma-enhanced CVD, graphene was grown on the surface of Ni-Cu alloy under low pressure using methane as the carbon source. The optimal composition of the Ni-Cu alloy, 1:2, was selected through experiments. In addition, the plasma power was optimized to improve the graphene quality. On the basis of the parameter optimization, together with our previously-reported, in-situ, sacrificial metal-layer etching technique, relatively homogeneous wafer-size patterned graphene was obtained directly on a 2-inch SiO2/Si substrate at a low temperature (~600 °C).

Space-Confined Growth of Individual Wide Bandgap Single Crystal CsPbCl3 Microplatelet for Near-Ultraviolet Photodetection

Perovskite photodetectors (PDs) with tunable detection wavelength have attracted extensive attention due to the potential application in the field of imaging, machine vision, and artificial intelligence. Most of the perovskite PDs focus on I- or Br-based materials due to their easy preparation techniques. However, their main photodetection capacity is situated in the visible region because of their narrower bandgap. Cl-based wide bandgap perovskites, such as CsPbCl₃ , are scarcely reported because of the bad film quality of the spin-coated Cl-based perovskite, due to the poor solubility of the precursor. Therefore, ultraviolet detection using high-quality full inorganic perovskite films, especially with high thermal stability of materials and devices, is still a big challenge. In this work, high-quality single crystal CsPbCl₃ microplatelets (MPs) synthesized by a simple space-confined growth method at low temperature for near-ultraviolet (NUV) PDs are reported. The single CsPbCl₃ MP PDs demonstrate a decent response to NUV light with a high on/off ratio of 5.6 × 10³ and a responsivity of 0.45 A W^-1 at 5 V. In addition, the dark current is as low as pA level, leading to detectivity up to 10¹¹ Jones. Moreover, PDs possess good stability and repeatability.

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model

Vanadium dioxide is a material that has a reversible metal-insulator phase change near 68 °C. To grow VO2 on a wide variety of substrates, with wafer-scale uniformity and angstrom level control of thickness, the method of atomic-layer deposition was chosen. This ALD process enables high-quality, low-temperature (≤150 °C) growth of ultrathin films (100-1000 Å) of VO2. For this demonstration, the VO2 films were grown on sapphire substrates. This low temperature growth technique produces mostly amorphous VO2 films. A subsequent anneal in an ultra-high vacuum chamber with a pressure of 7x10-4 Pa of ultra-high purity (99.999%) oxygen produced oriented, polycrystalline VO2 films. The crystallinity, phase, and strain of the VO2 were determined by Raman spectroscopy and X-ray diffraction, while the stoichiometry and impurity levels were determined by X-ray photoelectron spectroscopy, and finally the morphology was determined by atomic force microscopy. These data demonstrate the high-quality of the films grown by this technique. A model was created to fit to the data for VO2 in its metallic and insulating phases in the near infrared spectral region. The permittivity and refractive index of the ALD VO2 agreed well with the other fabrication methods in its insulating phase, but showed a difference in its metallic state. Finally, the analysis of the films' optical properties enabled the creation of a wavelength- and temperature-dependent model of the complex optical refractive index for developing VO2 as a tunable refractive index material.

Rational Concept for Reducing Growth Temperature in Vapor-Liquid-Solid Process of Metal Oxide Nanowires

Vapor-liquid-solid (VLS) growth process of single crystalline metal oxide nanowires has proven the excellent ability to tailor the nanostructures. However, the VLS process of metal oxides in general requires relatively high growth temperatures, which essentially limits the application range. Here we propose a rational concept to reduce the growth temperature in VLS growth process of various metal oxide nanowires. Molecular dynamics (MD) simulation theoretically predicts that it is possible to reduce the growth temperature in VLS process of metal oxide nanowires by precisely controlling the vapor flux. This concept is based on the temperature dependent "material flux window" that the appropriate vapor flux for VLS process of nanowire growth decreases with decreasing the growth temperature. Experimentally, we found the applicability of this concept for reducing the growth temperature of VLS processes for various metal oxides including MgO, SnO₂, and ZnO. In addition, we show the successful applications of this concept to VLS nanowire growths of metal oxides onto tin-doped indium oxide (ITO) glass and polyimide (PI) substrates, which require relatively low growth temperatures.

Low temperature and cost-effective growth of vertically aligned carbon nanofibers using spin-coated polymer-stabilized palladium nanocatalysts

We describe a fast and cost-effective process for the growth of carbon nanofibers (CNFs) at a temperature compatible with complementary metal oxide semiconductor technology, using highly stable polymer-Pd nanohybrid colloidal solutions of palladium catalyst nanoparticles (NPs). Two polymer-Pd nanohybrids, namely poly(lauryl methacrylate)-block-poly((2-acetoacetoxy)ethyl methacrylate)/Pd (LauMA x -b-AEMA y /Pd) and polyvinylpyrrolidone/Pd were prepared in organic solvents and spin-coated onto silicon substrates. Subsequently, vertically aligned CNFs were grown on these NPs by plasma enhanced chemical vapor deposition at different temperatures. The electrical properties of the grown CNFs were evaluated using an electrochemical method, commonly used for the characterization of supercapacitors. The results show that the polymer-Pd nanohybrid solutions offer the optimum size range of palladium catalyst NPs enabling the growth of CNFs at temperatures as low as 350 °C. Furthermore, the CNFs grown at such a low temperature are vertically aligned similar to the CNFs grown at 550 °C. Finally the capacitive behavior of these CNFs was similar to that of the CNFs grown at high temperature assuring the same electrical properties thus enabling their usage in different applications such as on-chip capacitors, interconnects, thermal heat sink and energy storage solutions.

Growth kinetics and growth mechanism of ultrahigh mass density carbon nanotube forests on conductive Ti/Cu supports

We evaluate the growth kinetics and growth mechanism of ultrahigh mass density carbon nanotube forests. They are synthesized by chemical vapor deposition at 450 °C using a conductive Ti/Cu support and Co-Mo catalyst system. We find that Mo stabilizes Co particles preventing lift off during the initial growth stage, thus promoting the growth of ultrahigh mass density nanotube forests by the base growth mechanism. The morphology of the forest gradually changes with growth time, mostly because of a structural change of the catalyst particles. After 100 min growth, toward the bottom of the forest, the area density decreases from ∼ 3-6 × 10(11) cm(-2) to ∼ 5 × 10(10) cm(-2) and the mass density decreases from 1.6 to 0.38 g cm(-3). We also observe part of catalyst particles detached and embedded within nanotubes. The progressive detachment of catalyst particles results in the depletion of the catalyst metals on the substrate surfaces. This is one of the crucial reasons for growth termination and may apply to other catalyst systems where the same features are observed. Using the packed forest morphology, we demonstrate patterned forest growth with a pitch of ∼ 300 nm and a line width of ∼ 150 nm. This is one of the smallest patterning of the carbon nanotube forests to date.