Low-energy electron microscopy intensity-voltage data - Factorization, sparse sampling and classification

Low-energy electron microscopy (LEEM) taken as intensity-voltage (I-V) curves provides hyperspectral images of surfaces, which can be used to identify the surface type, but are difficult to analyse. Here, we demonstrate the use of an algorithm for factorizing the data into spectra and concentrations of characteristic components (FSC³ ) for identifying distinct physical surface phases. Importantly, FSC³ is an unsupervised and fast algorithm. As example data we use experiments on the growth of praseodymium oxide or ruthenium oxide on ruthenium single crystal substrates, both featuring a complex distribution of coexisting surface components, varying in both chemical composition and crystallographic structure. With the factorization result a sparse sampling method is demonstrated, reducing the measurement time by 1-2 orders of magnitude, relevant for dynamic surface studies. The FSC³ concentrations are providing the features for a support vector machine-based supervised classification of the surface types. Here, specific surface regions which have been identified structurally, via their diffraction pattern, as well as chemically by complementary spectro-microscopic techniques, are used as training sets. A reliable classification is demonstrated on both example LEEM I-V data sets.

Ultrathin Ce-doped La2O3nanofilm electrocatalysts for efficient oxygen evolution reactions

It is still highly desired to develop efficient, resource-abundant and inexpensive electrocatalysts to improve the sluggish kinetics of oxygen evolution reaction (OER) in electrochemical water splitting systems. In this work, the large-area ultrathin (2.52 nm thick) Ce-doped La₂O₃nanofilms were developed via a facile and reliable ionic layer epitaxy method with different Ce content. The ultrathin Ce-doped La₂O₃nanofilm with optimum composition of La_1.22Ce_0.78O₃exhibited an excellent OER performance with a very low overpotential of 221 mV at 10 mA cm^-2and a small Tafel slope of 33.7 mV dec^-1. A remarkable high mass activity of 6263.2 A g^-1was also obtained from ultrathin La_1.22Ce_0.78O₃nanofilm at the overpotential of 221 mV. Such a high mass activity was three orders of magnitude higher than state-of-the-art commercial IrO₂powders (3.8 A g^-1) and more than 30 times higher than La₂O₃nanofilm (196.7 A g^-1) without Ce doping at the same overpotential. This high mass activity was even significantly higher than other recently reported typical OER catalysts. The substantial OER performance gain by the Ce doping was attributed to the improved conductivity and electrochemical active surface areas of nanofilms as a result of favorable tuning on the charge transfer and electronic structures. This work provides a promising approach to develop high-performance two-dimensional (2D) electrocatalysts by effective heteroatom doping strategy.

Surface Energy Change of Atomic-Scale Metal Oxide Thin Films by Phase Transformation

Fine-tuning of the surface free energy (SFE) of a solid material facilitates its use in a wide range of applications requiring precise control of the ubiquitous presence of liquid on the surface. In this study, we found that the SFE of rare-earth oxide (REO) thin films deposited by atomic layer deposition (ALD) gradually decreased with increasing film thickness; however, these changes could not be understood by classical interaction models. Herein, the mechanism underlying the aforesaid decrease was systematically studied by measuring contact angles, surface potential, adhesion force, crystalline structures, chemical compositions, and morphologies of the REO films. A growth mode of the REO films was observed: layer-by-layer growth at the initial stage with an amorphous phase and subsequent crystalline island growth, accompanied by a change in the crystalline structure and orientation that affects the SFE. The portion of the surface crystalline facets terminated with (222) and (440) planes evolved with an increase in ALD cycles and film thickness, as an amorphous phase was transformed. Based on this information, we demonstrated an SFE-tuned liquid tweezer with selectivity to target liquid droplets. We believe that the results of this fundamental and practical study, with excellent selectivity to liquids, will have significant impacts on coating technology.

Influence of nanostructure formation on the crystal structure and morphology of epitaxially grown Gd2O3 on Si(001)

The influence of growth conditions on the layer orientation, domain structure and crystal structure of gadolinium oxide (Gd₂O₃) on silicon (001) has been investigated. Gd₂O₃ was grown at low (250°C) and high (850°C) temperatures with different oxygen partial pressure as well as a temperature ramp up during growth. At low temperature, the cubic bixbyite type of crystal structure with space group Ia{\bar 3} was grown at low oxygen partial pressure. The layers consist of two domains oriented orthogonal to each other. The epitaxial relationships for the two domains were found to be Gd₂O₃(110)[001]||Si(001)[110] and Gd₂O₃(110)[001]||Si(001)[{\bar 1}10], respectively. Applying additional oxygen during growth results in a change in crystal and domain structures of the grown layer into the monoclinic Sm₂O₃-type of structure with space group C2/m with (20\bar 1) orientation and mainly two orthogonal domains with the epitaxial relationship Gd₂O₃(20\bar 1)[010]||Si(100)〈110〉 and a smooth surface morphology. Some smaller areas have two intermediate azimuthal orientations between these variants, which results in a six-domain structure. The change in crystal structure can be understood based on the Gibbs-Thomson effect caused by the initial nucleation of nanometre-sized islands and its variation in diameter with a change in growth conditions. The crystal structure remains stable even against a temperature ramp up during growth. The layers grown at high temperature exhibit a nanowire-like surface morphology, where the nanowires have a cubic crystal structure and are aligned orthogonal to each other along the 〈110〉 in-plane directions. An increase in oxygen supply results in a reduced length and increased number of nanowires due to lower adatom mobility. The results clearly indicate that both kinetic and thermodynamic factors have a strong impact on the crystal structure, epitaxial relationship and morphology of the grown layers.

Spontaneous Rippling and Subsequent Polymer Molding on Yttria-Stabilized Zirconia (110) Surfaces

Spontaneous nanoripple formation on (110) surfaces of yttria-stabilized zirconia, YSZ-(110), is achieved by diffusional surface doping with rare-earth oxides. Periodic arrays of parallel nanobars separated by channels (period ∼100 nm) grow out of the dopant sources, covering relatively wide areas of the surface (∼10 μm). The nanobars mound up on the surface by diffusion, exhibiting morphological uniformity and alignment, with their long axis lying parallel to the [11̅0] direction in the YSZ-(110) surface. The process for forming these nanobar arrays can be as simple as sprinkling of rare-earth oxide powder (dopant source) on YSZ-(110) surface and annealing in a high temperature air furnace. However, higher control on dopant dispersion on the surface is demonstrated with other techniques, including photolithography and inkjet printing. The ripple arrays extend anisotropically on the (110) surface, obeying the parabolic growth law, and showing principal values of the rate constant along [11̅0] (maximum) and [001] (minimum), as expected from the symmetry of the (110) surface. The self-patterned ceramic substrates are well-suited for pattern transfer by replica molding, as illustrated by single-step molding with polydimethylsiloxane (PDMS), which is a widely used biomaterial in cell-culture studies.

Nano rare-earth oxides induced size-dependent vacuolization: an independent pathway from autophagy

Four rare earth oxides have been shown to induce autophagy. Interestingly, we often noticed plentiful vacuolization, which was not always involved in this autophagic process. In this study, we investigated three other rare-earth elements, including Yttrium (Y), Ytterbium (Yb), and Lanthanum (La). Autophagic effect could be induced by all of them but only Y₂O₃ and Yb₂O₃ could cause massive vacuolization. Y₂O₃ and Yb₂O₃ treated by sonication or centrifugation to reduce particle size were used to test vacuolization level in HeLa cell lines. The results showed that rare earth oxides-induced vacuolization is size-dependent and differs from autophagic pathway. To further clarify the characteristics of this autophagic process, we used MEF Atg-5 (autophagy associated gene 5) knockout cell line, and the result showed that the autophagic process induced by rare earth oxides is Atg-5-dependent and the observed vacuolization was independent from autophagy. Similar results could also be observed in our tests on 3-methyladenine(3-MA), a well-known autophagy inhibitor. In conclusion, for the first time, we clarified the relationship between massive vacuolization and autophagic process induced by rare earth oxides and pointed out the size effect of rare earth oxides on the formation of vacuoles, which give clues to further investigation on the mechanisms underlying their biological effects.

A Wavelength Standard for the Near Infrared Based on the Reflectance Of Rare-Earth Oxides

This work describes the techniques used to prepare and analyze a reflectance wavelength standard composed of three rare-earth oxides. A mixture of dysprosium oxide (Dy2O3), erbium oxide (Er2O3), and holmium oxide (Ho2O3) provides a pressed powder specimen exhibiting a near infrared reflectance spectrum characterized by many discrete absorption minima in the wavelength range 700 to 2000 nm. The object of this activity was to develop a wavelength standard for improving the accuracy of reflectance measurements in the near infrared. The reflectance minima of the rare-earth oxide mixture was analyzed for the effects of varying spectral resolution and temperature. The uncertainties associated with the various parameters affecting the measurements and the determination of the location of the reflectance minima have been analyzed. The overall uncertainty in the location of these reflectance minima is believed not to exceed ± 1 nm.