New development of atomic layer deposition: processes, methods and applications

Recent Advances in Synthesis and Application of Metal Oxide Nanostructures in Chemical Sensors and Biosensors

Nanostructured materials formed from metal oxides offer a number of advantages, such as large surface area, improved mechanical and other physical properties, as well as adjustable electronic properties that are important in the development and application of chemical sensors and biosensor design. Nanostructures are classified using the dimensions of the nanostructure itself and their components. In this review, various types of nanostructures classified as 0D, 1D, 2D, and 3D that were successfully applied in chemical sensors and biosensors, and formed from metal oxides using different synthesis methods, are discussed. In particular, significant attention is paid to detailed analysis and future prospects of the synthesis methods of metal oxide nanostructures and their integration in chemical sensors and biosensor design.

Metal-Oxide FET Biosensor for Point-of-Care Testing: Overview and Perspective

Metal-oxide semiconducting materials are promising for building high-performance field-effect transistor (FET) based biochemical sensors. The existence of well-established top-down scalable manufacturing processes enables the reliable production of cost-effective yet high-performance sensors, two key considerations toward the translation of such devices in real-life applications. Metal-oxide semiconductor FET biochemical sensors are especially well-suited to the development of Point-of-Care testing (PoCT) devices, as illustrated by the rapidly growing body of reports in the field. Yet, metal-oxide semiconductor FET sensors remain confined to date, mainly in academia. Toward accelerating the real-life translation of this exciting technology, we review the current literature and discuss the critical features underpinning the successful development of metal-oxide semiconductor FET-based PoCT devices that meet the stringent performance, manufacturing, and regulatory requirements of PoCT.

Copper oxide nanostructured thin films processed by SILAR for optoelectronic applications

The lack of high-functioning p-type semiconductor oxide material is one of the critical challenges that face the widespread performance of transparent and flexible electronics. Cu x O nanostructured thin films are potentially appealing materials for such applications because of their innate p-type semi-conductivity, transparency, non-toxicity, abundant availability, and low-cost fabrication. This review summarizes current research on Cu x O nanostructured thin films deposited by the SILAR technique. After a brief introduction to the advantages of Cu x O semiconductor material, diverse approaches for depositing and growing such thin films are discussed. SILAR is one of the simplest deposition techniques in terms of better flexibility of the substrate choice, the capability of large-area fabrication, budget-friendly, deposition of stable and adherent film, low processing temperature for the film fabrication as well as reproducibility. In addition, various fabrication parameters such as types of copper salts, pH of precursors, number of cycles during immersion, annealing of as-deposited films, doping by diverse dopants, and growth temperature affect the rate of fabrication with the structural, electrical, and optical properties of Cu x O nanostructured thin films, which led the technique unique to study extensively. This review will include the recent progress that has recently been made in different aspects of Cu x O processed by the SILAR. It will describe the theory, mechanism, and factors affecting SILAR-deposited Cu x O. Finally, conclusions and perspectives concerning the use of Cu x O materials in optoelectronic devices will be visualized.

Recent Development of Moisture-Enabled-Electric Nanogenerators

Power generation by converting energy from the ambient environment has been considered a promising strategy for developing decentralized electrification systems to complement the electricity supply for daily use. Wet gases, such as water evaporation or moisture in the atmosphere, can be utilized as a tremendous source of electricity by emerging power generation devices, that is, moisture-enabled-electric nanogenerators (MEENGs). As a promising technology, MEENGs provided a novel manner to generate electricity by harvesting energy from moisture, originating from the interactions between water molecules and hydrophilic functional groups. Though the remarkable progress of MEENGs has been achieved, a systematic review in this specific area is urgently needed to summarize previous works and provide sharp points to further develop low-cost and high-performing MEENGs through overcoming current limitations. Herein, the working mechanisms of MEENGs reported so far are comprehensively compared. Subsequently, a systematic summary of the materials selection and fabrication methods for currently reported MEENG construction is presented. Then, the improvement strategies and development directions of MEENG are provided. At last, the demonstrations of the applications assembled with MEENGs are extracted. This work aims to pave the way for the further MEENGs to break through the performance limitations and promote the popularization of future micron electronic self-powered equipment.

Facile Electroless Plating Method to Fabricate a Nickel-Phosphorus-Modified Copper Current Collector for a Lean Lithium-Metal Anode

The compatibility of current collectors with reactive Li is key to inducing stable Li cycling and prolonged cycle life of lean Li-metal batteries. Herein, a thin and uniform layer of Ni-P complex was built on the surface of a Cu current collector (NiP@Cu) via an efficient, controllable, and cost-effective electroless plating method. The thickness, morphology, composition, and roughness of the Ni-P deposition were successfully regulated. Lithiophilicity of the current collector was greatly improved by Ni-P deposition, which effectively reduced the Li nucleation overpotential and suppressed the Li dendrite growth. In addition, NiP@Cu promoted an inorganic LiF/Li₃P-rich solid electrolyte interphase to facilitate interfacial charge transfer and eliminate excessive side reactions between Li and the electrolyte. As a result, the Coulombic efficiency of half-cells remained above 98.5% for more than 400 cycles at 0.5 mA/cm² and 98.2% for more than 250 cycles at 1 mA/cm². Full cells with NiP@Cu also showed superior performance compared to those with bare Cu. This work proposes a promising surface modification method to develop a stable, dendrite-free, and cost-effective anode current collector for high-energy-density lean Li-metal batteries.

Is atomic layer deposition of silver possible on N95 masks?

Due to the COVID19 outbreak, there has been increasing interest in tailoring, modifying and improving conventional personal protective equipment to increase their service life and make them more effective against viruses and bacteria. Here, atomic layer deposition (ALD) was used to functionalize the filter of N95 mask with nano-islands of silver. X-ray photoelectron spectroscopy and x-ray absorption fine structure were used for ALD silver characterization; microbiological assay was conducted to study the effectiveness of the deposited silver against the air-borne pathogen Staphylococcus aureus (S. aureus). Results showed that silver ALD successfully functionalized the N95 mask at 90 and 120 °C for two different numbers of ALD cycles (1100 and 1500 cycles). The deposited silver nano-islands were stable on the N95 filter media against washing. The leaching of silver nano-islands was studied using inductively coupled plasma mass spectrometry of phosphate-buffered saline solution after soaking the mask in it over predetermined times. <9% of Ag was removed after a maximum time of 4 h that was investigated. Antimicrobial tests showed that for samples functionalized with 1100 ALD cycles of Ag, 76% reduction in S. aureus colony-forming units content was observed after 24 h of biofilm development on the mask surfaces.

Engineering van der Waals Materials for Advanced Metaphotonics

The outstanding chemical and physical properties of 2D materials, together with their atomically thin nature, make them ideal candidates for metaphotonic device integration and construction, which requires deep subwavelength light-matter interaction to achieve optical functionalities beyond conventional optical phenomena observed in naturally available materials. In addition to their intrinsic properties, the possibility to further manipulate the properties of 2D materials via chemical or physical engineering dramatically enhances their capability, evoking new science on light-matter interaction, leading to leaped performance of existing functional devices and giving birth to new metaphotonic devices that were unattainable previously. Comprehensive understanding of the intrinsic properties of 2D materials, approaches and capabilities for chemical and physical engineering methods, the resulting property modifications and novel functionalities, and applications of metaphotonic devices are provided in this review. Through reviewing the detailed progress in each aspect and the state-of-the-art achievement, insightful analyses of the outstanding challenges and future directions are elucidated in this cross-disciplinary comprehensive review with the aim to provide an overall development picture in the field of 2D material metaphotonics and promote rapid progress in this fast emerging and prosperous field.

A Mini Review on Thin Film Superconductors

Thin superconducting films have been a significant part of superconductivity research for more than six decades. They have had a significant impact on the existing consensus on the microscopic and macroscopic nature of the superconducting state. Thin-film superconductors have properties that are very different and superior to bulk material. Amongst the various classification criteria, thin-film superconductors can be classified into Fe based thin-film superconductors, layered titanium compound thin-film superconductors, intercalation compounds of layered and cage-like structures, and other thin-film superconductors that do not fall into these groups. There are various techniques of manufacturing thin films, which include atomic layer deposition (ALD), chemical vapour deposition (CVD), physical vapour deposition (PVD), molecular beam epitaxy (MBE), sputtering, electron beam evaporation, laser ablation, cathodic arc, and pulsed laser deposition (PLD). Thin film technology offers a lucrative scheme of creating engineered surfaces and opens a wide exploration of prospects to modify material properties for specific applications, such as those that depend on surfaces. This review paper reports on the different types and groups of superconductors, fabrication of thin-film superconductors by MBE, PLD, and ALD, their applications, and various challenges faced by superconductor technologies. Amongst all the thin film manufacturing techniques, more focus is put on the fabrication of thin film superconductors by atomic layer deposition because of the growing popularity the process has gained in the past decade.

Tailoring InSb Nanowires for High Thermoelectric Performance Using AAO Template-Assisted Die Casting Process

Herein, we demonstrate a facile technique for the fabrication of one-dimensional indium antimonide (InSb) nanowires using anodic aluminium oxide (AAO) template-assisted vacuum die-casting method. The filling mechanism of the vacuum die-casting process is investigated on varying AAO pore structures through different electrolytes. It is found that the anodizing electrolytes play a vital role in nanowire growth and structure formation. The as-obtained InSb nanowires from the dissolution process show a degree of high crystallinity, homogeneity, and uniformity throughout their structure. The TEM and XRD results elucidated the InSb zinc-blende crystal structure and preferential orientation along the c-axis direction. The thermoelectric characteristics of InSb nanowires were measured with a four-electrode system, and their resistivity, Seebeck coefficient, power factor, thermal conductivity, and ZT have been evaluated. Further, surface-modified nanowires using the reactive-ion etching technique showed a 50% increase in thermoelectric performance.

Accelerated Deep Learning Dynamics for Atomic Layer Deposition of Al(Me)3 and Water on OH/Si(111)

Knowledge of the detailed mechanism behind the atomic layer deposition (ALD) can greatly facilitate the optimization of the manufacturing process. Computational modeling can potentially foster the understanding; however, the presently available capabilities of the accurate ab initio computational techniques preclude their application to modeling surface processes occurring on a long time scale, such as ALD. Although the situation can be greatly improved using machine learning (ML), this technique requires an enormous amount of data for training datasets. Here, we propose an iterative protocol for optimizing ML training datasets and apply ML-assisted ab initio calculations to model surface reactions occurring during the Al(Me)₃/H₂O ALD process on the OH-terminated Si (111) surface. The protocol uses a recently developed low-dimensional projection technique (TDUS), greatly reducing the amount of information required to achieve high accuracy (ca. 1 kcal/mol or less) of the developed ML models. The resulting free energy landscapes reveal fine details of various aspects of the target ALD process, such as the surface proton transfer, zwitterionic surface configurations, elimination-addition/addition-elimination, and S_N2 reactions as well as the role of the surface entropic and temperature effects. Simulations of adsorption dynamics predict that the maximum physisorption rate of ca. 70% is achieved at the incidence velocity u_rms of the reactants in the range of 15-20 Å/ps. Hence, the proposed protocol furnishes a very effective tool to study complex chemical reaction dynamics at a much reduced computational cost.

Flow-Through Atmospheric Pressure-Atomic Layer Deposition Reactor for Thin-Film Deposition in Capillary Columns

We demonstrate the development of a new atmospheric pressure-atomic layer deposition(AP-ALD) system to coat the inner walls of capillary columns for gas chromatography (GC). Unlike traditional ALD, this reactor operates at near-atmospheric pressure and addresses the challenges of depositing thin films inside capillaries, which include long pump down times, deposition in high-aspect-ratio materials, and temperature control. We show ALD of alumina in 5 and 12 m capillaries (0.53 mm ID) via sequential half reactions of trimethylaluminum and water. Our system yields pinhole-free, uniform thin films. It includes small witness chambers for witness silicon shards before and after the capillary. An engineering flow/transport analysis of the device is provided. Our ALD alumina thin films are characterized by spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy, transmission electron microscopy (TEM), and energy-dispersive X-ray spectroscopy. Alumina film growth achieved is 1.4-1.5 Å/cycle, which is consistent with previously reported results. Film thickness measurements by SE on witness shards of silicon and by TEM at both ends of the capillary are in good agreement. A capillary column coated with alumina is used to separate different gases by GC, although the retention times of gases are essentially the same as with an untreated fused silica capillary. This successful deposition of ALD alumina in long capillaries opens the door for other possible ALD coatings, including hybrid organic-inorganic coatings, using the 450+ ALD precursors available today.

Nanoscale Encapsulation of Hybrid Perovskites Using Hybrid Atomic Layer Deposition

Organic-inorganic hybrid perovskites have shown tremendous potential for optoelectronic applications. Ion migration within the crystal and across heterointerfaces, however, imposed severe problems with material degradation and performance loss in devices. Encapsulating hybrid perovskite with a thin physical barrier can be essential for suppressing the undesirable interfacial reactions without inhibiting the desirable transport of charge carriers. Here, we demonstrated that nanoscale, pinhole-free Al₂O₃ layer can be coated directly on the perovskite CH₃NH₃PbI₃ using atomic layer deposition (ALD). The success can be attributed to a multitude of strategies including surface molecular modification and hybrid ALD processing combining the thermal and plasma-enhanced modes. The Al₂O₃ films provided remarkable protection to the underlying perovskite films, surviving by hours in solvents without noticeable decays in either structural or optical properties. The results advanced the understanding of applying ALD directly on hybrid perovskite and provided new opportunities to implement stable and high-performance devices based on the perovskites.

Annealing temperature variation and its influence on the self-cleaning properties of TiO2 thin films

Titanium dioxide (TiO2) is an important material in science and engineering because of its basic and synthetic properties. Nevertheless, there is a dearth of reports in the open literature focusing on its ability to self-clean under temperature changes. In this study, we used the spin coating technique to produce TiO2 thin films to evaluate its self-cleaning ability after annealing at different temperatures. The TiO2 sol was obtained through an endothermal sol-gel process, and the gel was coated on a glass substrate using a spin coater. The deposited films were then annealed at 400 °C, 600 °C, and 800 °C for 1 h. The influence of annealing temperature variation on the self-cleaning properties of the thin film was characterized using X-ray diffraction, scanning electron microscope; Fourier transformed infrared spectrometric analysis and UV-vis spectrophotometer. A test to ascertain self-cleaning was conducted using the degradation of methylene blue, and the different films were tested for durability. The durability test confirmed the connection between solid coating and substrate at all annealing temperatures. Thin films annealed at 600 °C revealed the best self-cleaning properties. The morphological analysis revealed snowflake shapes uniformly distributed over the substrate at 400 °C, and agglomeration improved as the annealing temperature increased. Structural analysis showed an increase in crystallinity with an increase in annealing temperature for both rutile and anatase phases. At three different temperatures, the chemical bond and the absorption band pattern followed the same path, although the peak intensity declined with temperature rise. Finally, the optical bandgap of the thin coated TiO2 declined from 3.39 eV to 3.20 eV as the binding temperature increased from 400 to 800 °C.

Osteoblast Attachment on Titanium Coated with Hydroxyapatite by Atomic Layer Deposition

Background: The increasing demand for bone implants with improved osseointegration properties has prompted researchers to develop various coating types for metal implants. Atomic layer deposition (ALD) is a method for producing nanoscale coatings conformally on complex three-dimensional surfaces. We have prepared hydroxyapatite (HA) coating on titanium (Ti) substrate with the ALD method and analyzed the biocompatibility of this coating in terms of cell adhesion and viability. Methods: HA coatings were prepared on Ti substrates by depositing CaCO₃ films by ALD and converting them to HA by wet treatment in dilute phosphate solution. MC3T3-E1 preosteoblasts were cultured on ALD-HA, glass slides and bovine bone slices. ALD-HA and glass slides were either coated or non-coated with fibronectin. After 48h culture, cells were imaged with scanning electron microscopy (SEM) and analyzed by vinculin antibody staining for focal adhesion localization. An 3-[4,5-dimethylthiazol-2-yl]-2,5-diphenyl tetrazolium bromide (MTT) test was performed to study cell viability. Results: Vinculin staining revealed similar focal adhesion-like structures on ALD-HA as on glass slides and bone, albeit on ALD-HA and bone the structures were thinner compared to glass slides. This might be due to thin and broad focal adhesions on complex three-dimensional surfaces of ALD-HA and bone. The MTT test showed comparable cell viability on ALD-HA, glass slides and bone. Conclusion: ALD-HA coating was shown to be biocompatible in regard to cell adhesion and viability. This leads to new opportunities in developing improved implant coatings for better osseointegration and implant survival.

Self-Cleaning Biomimetic Surfaces-The Effect of Microstructure and Hydrophobicity on Conidia Repellence

Modification of surface structure for the promotion of food safety and health protection is a technology of interest among many industries. With this study, we aimed specifically to develop a tenable solution for the fabrication of self-cleaning biomimetic surface structures for agricultural applications such as post-harvest packing materials and greenhouse cover screens. Phytopathogenic fungi such as Botrytiscinerea are a major concern for agricultural systems. These molds are spread by airborne conidia that contaminate surfaces and infect plants and fresh produce, causing significant losses. The research examined the adhesive role of microstructures of natural and synthetic surfaces and assessed the feasibility of structured biomimetic surfaces to easily wash off fungal conidia. Soft lithography was used to create polydimethylsiloxane (PDMS) replications of Solanum lycopersicum (tomato) and Colocasia esculenta (elephant ear) leaves. Conidia of B. cinerea were applied to natural surfaces for a washing procedure and the ratios between applied and remaining conidia were compared using microscopy imaging. The obtained results confirmed the hypothesis that the dust-repellent C. esculenta leaves have a higher conidia-repellency compared to tomato leaves which are known for their high sensitivities to phytopathogenic molds. This study found that microstructure replication does not mimic conidia repellency found in nature and that conidia repellency is affected by a mix of parameters, including microstructure and hydrophobicity. To examine the effect of hydrophobicity, the study included measurements and analyses of apparent contact angles of natural and synthetic surfaces including activated (hydrophilic) surfaces. No correlation was found between the surface apparent contact angle and conidia repellency ability, demonstrating variation in washing capability correlated to microstructure and hydrophobicity. It was also found that a microscale sub-surface (tomato trichromes) had a high conidia-repelling capability, demonstrating an important role of non-superhydrophobic microstructures.

Self-limiting nitrogen/hydrogen plasma radical chemistry in plasma-enhanced atomic layer deposition of cobalt

Cobalt (Co) is a potential candidate in replacing copper for interconnects and has been applied in trenches in the semiconductor industry for over twenty years. A non-oxidizing reactant is required in the plasma-enhanced atomic layer deposition (PE-ALD) of thin films of metals to avoid O-contamination. PE-ALD of Co has been demonstrated experimentally with plasma sources of NH₃ or a mixture of N₂ and H₂, but the growth mechanism and key reactions are not clear. In this study, we have investigated the reactions of plasma-generated predominant species, i.e. radicals ˙H, ˙N, ˙NH and ˙NH₂, at metal precursor (CoCp₂) treated Co(001) and Co(100) surfaces using static DFT calculations at 0 K and molecular dynamics simulations at 600 K. The proposed reaction mechanisms are (1) ˙N radicals play an important role in eliminating the surface-bound Cp ligand (if any) via pyridine (C₅H₅N) formation and desorption, whereas ˙H radicals have endothermic reactions for eliminating the Cp ligand via CpH formation and desorption; (2) the surface NH_x species are eliminated by ˙H radicals via NH₃ formation and desorption. The simulations of these key reactions show that on the Co(001) surface, the remaining Cp ligand and surface NH_x species after the metal precursor pulse will be completely removed with ˙N and ˙H radicals, resulting in Co atoms deposited on the Co(001) surface at a coverage of 3.03 Co nm^-2. However, on the Co(100) surface, the surface NH₂ species cannot be completely removed via NH₃ formation and desorption due to overall endothermic reactions. Instead, ˙H radicals react with trench N species, resulting from H transfer in the metal precursor pulse, to form NH. These trench N species cannot be eliminated completely on the Co(100) surface, which will be the source of N impurities in the deposited Co thin films. At the post-plasma stage, the metal surface will be covered with NH_x-terminations with plasma generated ˙NH radicals and is then ready for the next deposition cycle. Our DFT results highlight and explain why ammonia or H₂/N₂ plasma, which produce NH_x species, are required to deposit high-quality and low-impurity Co thin films using Co metallocene precursors.

Scalable Hybrid Antibacterial Surfaces: TiO2 Nanoparticles with Black Silicon

With the increase of drug resistance, there is a need for surface coatings that inhibit microbes without antibiotics. Nanostructured photocatalysts, like TiO₂-coated nanotubes, are promising alternatives to antibiotics. Nanostructures rupture the cell wall by impaling the bacteria. Photocatalysts generate reactive oxygen species (ROS) in the presence of light, which oxidize organic matter. The combined effect of photocatalysts and nanostructures is better than the addition of individual components, as nanostructures also enhance the ROS production by trapping light. The synergetic effect is remarkably effective in reducing the growth of bacterial colonies, but scalability still remains a challenge. Conventional techniques like atomic layer deposition (ALD) are excellent for proof of concept but are not scalable to hundreds of square meters, as needed for practical applications. This report demonstrates two scalable and cost-effective techniques for synthesizing photocatalytic nanostructures: spray- and spin-coating TiO₂ nanoparticles. Unlike ALD, spray- and spin-coated TiO₂ nanoparticles do not reduce the roughness of a structured surface, which improves antibacterial performance by 23%. Integration of nanostructures with spray-coated TiO₂ is potentially a low-cost and scalable technology for large-area antibacterial surfaces.

Recent Advances in Theoretical Development of Thermal Atomic Layer Deposition: A Review

Atomic layer deposition (ALD) is a vapor-phase deposition technique that has attracted increasing attention from both experimentalists and theoreticians in the last few decades. ALD is well-known to produce conformal, uniform, and pinhole-free thin films across the surface of substrates. Due to these advantages, ALD has found many engineering and biomedical applications. However, drawbacks of ALD should be considered. For example, the reaction mechanisms cannot be thoroughly understood through experiments. Moreover, ALD conditions such as materials, pulse and purge durations, and temperature should be optimized for every experiment. It is practically impossible to perform many experiments to find materials and deposition conditions that achieve a thin film with desired applications. Additionally, only existing materials can be tested experimentally, which are often expensive and hazardous, and their use should be minimized. To overcome ALD limitations, theoretical methods are beneficial and essential complements to experimental data. Recently, theoretical approaches have been reported to model, predict, and optimize different ALD aspects, such as materials, mechanisms, and deposition characteristics. Those methods can be validated using a different theoretical approach or a few knowledge-based experiments. This review focuses on recent computational advances in thermal ALD and discusses how theoretical methods can make experiments more efficient.

Nanoscale self-assembly: concepts, applications and challenges

Self-assembly offers unique possibilities for fabricating nanostructures, with different morphologies and properties, typically from vapour or liquid phase precursors. Molecular units, nanoparticles, biological molecules and other discrete elements can spontaneously organise or form via interactions at the nanoscale. Currently, nanoscale self-assembly finds applications in a wide variety of areas including carbon nanomaterials and semiconductor nanowires, semiconductor heterojunctions and superlattices, the deposition of quantum dots, drug delivery, such as mRNA-based vaccines, and modern integrated circuits and nanoelectronics, to name a few. Recent advancements in drug delivery, silicon nanoelectronics, lasers and nanotechnology in general, owing to nanoscale self-assembly, coupled with its versatility, simplicity and scalability, have highlighted its importance and potential for fabricating more complex nanostructures with advanced functionalities in the future. This review aims to provide readers with concise information about the basic concepts of nanoscale self-assembly, its applications to date, and future outlook. First, an overview of various self-assembly techniques such as vapour deposition, colloidal growth, molecular self-assembly and directed self-assembly/hybrid approaches are discussed. Applications in diverse fields involving specific examples of nanoscale self-assembly then highlight the state of the art and finally, the future outlook for nanoscale self-assembly and potential for more complex nanomaterial assemblies in the future as technological functionality increases.

Electrodeposited PEDOT:PSS-Al2O3 Improves the Steady-State Efficiency of Inverted Perovskite Solar Cells

The atomic layer deposition (ALD) of Al₂O₃ between perovskite and the hole transporting material (HTM) PEDOT:PSS has previously been shown to improve the efficiency of perovskite solar cells. However, the costs associated with this technique make it unaffordable. In this work, the deposition of an organic-inorganic PEDOT:PSS-Cl-Al₂O₃ bilayer is performed by a simple electrochemical technique with a final annealing step, and the performance of this material as HTM in inverted perovskite solar cells is studied. It was found that this material (PEDOT:PSS-Al₂O₃) improves the solar cell performance by the same mechanisms as Al₂O₃ obtained by ALD: formation of an additional energy barrier, perovskite passivation, and increase in the open-circuit voltage (V_oc) due to suppressed recombination. As a result, the incorporation of the electrochemical Al₂O₃ increased the cell efficiency from 12.1% to 14.3%. Remarkably, this material led to higher steady-state power conversion efficiency, improving a recurring problem in solar cells.

Substrate-Driven Atomic Layer Deposition of High-κ Dielectrics on 2D Materials

Atomic layer deposition (ALD) of high-κ dielectrics on two-dimensional (2D) materials (including graphene and transition metal dichalcogenides) still represents a challenge due to the lack of out-of-plane bonds on the pristine surfaces of 2D materials, thus making the nucleation process highly disadvantaged. The typical methods to promote the nucleation (i.e., the predeposition of seed layers or the surface activation via chemical treatments) certainly improve the ALD growth but can affect, to some extent, the electronic properties of 2D materials and the interface with high-κ dielectrics. Hence, direct ALD on 2D materials without seed and functionalization layers remains highly desirable. In this context, a crucial role can be played by the interaction with the substrate supporting the 2D membrane. In particular, metallic substrates such as copper or gold have been found to enhance the ALD nucleation of Al2O3 and HfO2 both on monolayer (1 L) graphene and MoS2. Similarly, uniform ALD growth of Al2O3 on the surface of 1 L epitaxial graphene (EG) on SiC (0001) has been ascribed to the peculiar EG/SiC interface properties. This review provides a detailed discussion of the substrate-driven ALD growth of high-κ dielectrics on 2D materials, mainly on graphene and MoS2. The nucleation mechanism and the influence of the ALD parameters (namely the ALD temperature and cycle number) on the coverage as well as the structural and electrical properties of the deposited high-κ thin films are described. Finally, the open challenges for applications are discussed.

Surface Engineering Strategies to Enhance the In Situ Performance of Medical Devices Including Atomic Scale Engineering

Decades of intense scientific research investigations clearly suggest that only a subset of a large number of metals, ceramics, polymers, composites, and nanomaterials are suitable as biomaterials for a growing number of biomedical devices and biomedical uses. However, biomaterials are prone to microbial infection due to Escherichia coli (E. coli), Staphylococcus aureus (S. aureus), Staphylococcus epidermidis (S. epidermidis), hepatitis, tuberculosis, human immunodeficiency virus (HIV), and many more. Hence, a range of surface engineering strategies are devised in order to achieve desired biocompatibility and antimicrobial performance in situ. Surface engineering strategies are a group of techniques that alter or modify the surface properties of the material in order to obtain a product with desired functionalities. There are two categories of surface engineering methods: conventional surface engineering methods (such as coating, bioactive coating, plasma spray coating, hydrothermal, lithography, shot peening, and electrophoretic deposition) and emerging surface engineering methods (laser treatment, robot laser treatment, electrospinning, electrospray, additive manufacturing, and radio frequency magnetron sputtering technique). Atomic-scale engineering, such as chemical vapor deposition, atomic layer etching, plasma immersion ion deposition, and atomic layer deposition, is a subsection of emerging technology that has demonstrated improved control and flexibility at finer length scales than compared to the conventional methods. With the advancements in technologies and the demand for even better control of biomaterial surfaces, research efforts in recent years are aimed at the atomic scale and molecular scale while incorporating functional agents in order to elicit optimal in situ performance. The functional agents include synthetic materials (monolithic ZnO, quaternary ammonium salts, silver nano-clusters, titanium dioxide, and graphene) and natural materials (chitosan, totarol, botanical extracts, and nisin). This review highlights the various strategies of surface engineering of biomaterial including their functional mechanism, applications, and shortcomings. Additionally, this review article emphasizes atomic scale engineering of biomaterials for fabricating antimicrobial biomaterials and explores their challenges.

Investigations of Structural and Electrical Properties of ALD Films Formed with the Ozone Precursor

The continuous development of ALD thin films demands ongoing improvements and changes toward fabricating materials with tailored properties that are suitable for different practical applications. Ozone has been recently established as a precursor, with distinct advantages over the alternative oxidizing precursors in the ALDs of advanced dielectric films. This study reports alumina (Al2O3) and hafnia (HfO2) formation using an O3 source and compares the obtained structural and electrical properties. The performed structural examinations of ozone-based materials proved homogenous high-k films with less vacancy levels compared to water-based films. The enhanced structural properties also result in the problematic incorporation of different dopants through the bulk layer. Furthermore, analysis of electrical characteristics of the MIS structures with ALD gate dielectrics demonstrated the improved quality and good insulating properties of ozone-based films. However, further optimization of the ALD technique with ozone is needed as a relatively low relative permittivity characterizes the ultra-thin films.

Ni80Fe20 nanotubes with optimized spintronic functionalities prepared by atomic layer deposition

Permalloy Ni₈₀Fe₂₀ is one of the key magnetic materials in the field of magnonics. Its potential would be further unveiled if it could be deposited in three dimensional (3D) architectures of sizes down to the nanometer. Atomic Layer Deposition, ALD, is the technique of choice for covering arbitrary shapes with homogeneous thin films. Early successes with ferromagnetic materials include nickel and cobalt. Still, challenges in depositing ferromagnetic alloys reside in the synthesis via decomposing the constituent elements at the same temperature and homogeneously. We report plasma-enhanced ALD to prepare permalloy Ni₈₀Fe₂₀ thin films and nanotubes using nickelocene and iron(iii) tert-butoxide as metal precursors, water as the oxidant agent and an in-cycle plasma enhanced reduction step with hydrogen. We have optimized the ALD cycle in terms of Ni : Fe atomic ratio and functional properties. We obtained a Gilbert damping of 0.013, a resistivity of 28 μΩ cm and an anisotropic magnetoresistance effect of 5.6 % in the planar thin film geometry. We demonstrate that the process also works for covering GaAs nanowires, resulting in permalloy nanotubes with high aspect ratios and diameters of about 150 nm. Individual nanotubes were investigated in terms of crystal phase, composition and spin-dynamic response by microfocused Brillouin Light Scattering. Our results enable NiFe-based 3D spintronics and magnonic devices in curved and complex topology operated in the GHz frequency regime.

Application of Molecular Vapour Deposited Al2O3 for Graphene-Based Biosensor Passivation and Improvements in Graphene Device Homogeneity

Graphene-based point-of-care (PoC) and chemical sensors can be fabricated using photolithographic processes at wafer-scale. However, these approaches are known to leave polymer residues on the graphene surface, which are difficult to remove completely. In addition, graphene growth and transfer processes can introduce defects into the graphene layer. Both defects and resist contamination can affect the homogeneity of graphene-based PoC sensors, leading to inconsistent device performance and unreliable sensing. Sensor reliability is also affected by the harsh chemical environments used for chemical functionalisation of graphene PoC sensors, which can degrade parts of the sensor device. Therefore, a reliable, wafer-scale method of passivation, which isolates the graphene from the rest of the device, protecting the less robust device features from any aggressive chemicals, must be devised. This work covers the application of molecular vapour deposition technology to create a dielectric passivation film that protects graphene-based biosensing devices from harsh chemicals. We utilise a previously reported "healing effect" of Al2O3 on graphene to reduce photoresist residue from the graphene surface and reduce the prevalence of graphene defects to improve graphene device homogeneity. The improvement in device consistency allows for more reliable, homogeneous graphene devices, that can be fabricated at wafer-scale for sensing and biosensing applications.

Long cyclic stability of acidic aqueous zinc-ion batteries achieved by atomic layer deposition: the effect of the induced orientation growth of the Zn anode

Aqueous Zn-ion batteries with economical ZnSO₄ solution as the electrolyte suffer from a tremendous tendency of dendrite formation under mildly acidic conditions; moreover, utilization of Zn(CF₃SO₃)₂ delivers superior performance, but is expensive. Herein, we optimize the ZnSO₄ electrolyte by inducing 50 μL of 10 M sulfuric acid in 10 mL electrolyte, which can achieve long cycle life (1000 h at 0.1 mA cm^-2, 300 h at 1 mA cm^-2 and 250 h at 10 mA cm^-2) when the Zn foil is protected by three metallic oxides deposited by atomic layer deposition (ALD). The nucleation behaviour of the (002) facet has proved to play a critical role in the reversible lifespan. The Al₂O₃ layer would restrict the stripping procedure, leading to the highest overpotential, while the TiO₂ layer and Fe₂O₃ layer tended to strip all orientations but the (002) facet. Al₂O₃@Zn demonstrated a preference for a compact hillock-like (101) orientation texture in the deposition procedure, while TiO₂@Zn and Fe₂O₃@Zn were favourable to obtain a smooth terrace texture. Additionally, symmetric cells with Fe₂O₃@Zn expressed the lowest overpotential (31.64 mV) and minimal voltage hysteresis (23.6 mV) at 1 mA cm^-2. A Zn-MnO₂ battery with Fe₂O₃@Zn also displayed superior capacity, which could reach 280 mA h g^-1 at a current density of 1 A g^-1. The diffusion coefficient of Zn²⁺ discloses that among the three ALD layers, full cells with Fe₂O₃@Zn are the most favourable for diffusion of Zn²⁺ in acidic electrolyte.

The effect of nanocoatings of SiO2, TiO2, and ZrO2 on titanium-porcelain bonding

STATEMENT OF PROBLEM

Durable titanium-porcelain bonding is challenging because of the formation of a thick oxide layer on the surface during porcelain firing.

PURPOSE

The purpose of this in vitro study was to evaluate how atomic layer deposition (ALD) of different oxide coatings affected titanium-porcelain bonding and failure types.

MATERIAL AND METHODS

Forty-four airborne-particle abraded Type-2 titanium specimens were coated by ALD with either SiO₂, TiO₂, or ZrO₂ (n=11) at a thickness of 30 nm, whereas control specimens were left uncoated (n=11) (airborne-particle abraded only). The surface roughness of the specimens was analyzed with a profilometer before applying porcelain (Vita Titankeramic). Titanium-porcelain bonding was analyzed by using a 3-point bend test. Surface properties and titanium-porcelain interfaces were examined under scanning electron microscopy combined with energy-dispersive spectroscopy, and failure types were evaluated by using a stereomicroscope. Surface roughness and bond strength data were analyzed by 1-way ANOVA and Tukey HSD tests. Failure type data were analyzed by the Fisher-Freeman-Halton exact test (α=.05).

RESULTS

All nanocoatings increased surface roughness values, but only TiO₂ and ZrO₂ coatings showed statistically significant higher roughness than the control surfaces (P<.001). Specimens coated with SiO₂ (28.59 ±4.37 MPa) and TiO₂ (26.86 ±3.66 MPa) presented significantly higher bonding strength than control (22.04 ±4.59 MPa) specimens (P<.01). Fracture types of different groups were not statistically different (P>.05).

CONCLUSIONS

Nanocoating titanium surfaces with SiO₂ and TiO₂ by using the ALD technique significantly improved titanium-porcelain bonding.

Amorphous inorganic semiconductors for the development of solar cell, photoelectrocatalytic and photocatalytic applications

Amorphous inorganic semiconductors have attracted growing interest due to their unique electrical and optical properties that arise from their intrinsic disordered structure and thermodynamic metastability. Recently, amorphous inorganic semiconductors have been applied in a variety of new technologies, including solar cells, photoelectrocatalysis, and photocatalysis. It has been reported that amorphous phases can improve both efficiency and stability in these applications. While these phenomena are well established, their mechanisms have long remained unclear. This review first introduces the general background of amorphous inorganic semiconductor properties and synthesis. Then, the recent successes and current challenges of amorphous inorganic semiconductor-based materials for applications in solar cells, photoelectrocatalysis, and photocatalysis are addressed. In particular, we discuss the mechanisms behind the remarkable performances of amorphous inorganic semiconductors in these fields. Finally, we provide insightful perspectives into further developments for applications of amorphous inorganic semiconductors.

Wireless Self-Powered High-Performance Integrated Nanostructured-Gas-Sensor Network for Future Smart Homes

The accelerated evolution of communication platforms including Internet of Things (IoT) and the fifth generation (5G) wireless communication network makes it possible to build intelligent gas sensor networks for real-time monitoring chemical safety and personal health. However, this application scenario requires a challenging combination of characteristics of gas sensors including small formfactor, low cost, ultralow power consumption, superior sensitivity, and high intelligence. Herein, self-powered integrated nanostructured-gas-sensor (SINGOR) systems and a wirelessly connected SINGOR network are demonstrated here. The room-temperature operated SINGOR system can be self-driven by indoor light with a Si solar cell, and it features ultrahigh sensitivity to H₂, formaldehyde, toluene, and acetone with the record low limits of detection (LOD) of 10, 2, 1, and 1 ppb, respectively. Each SINGOR consisting of an array of nanostructured sensors has the capability of gas pattern recognition and classification. Furthermore, multiple SINGOR systems are wirelessly connected as a sensor network, which has successfully demonstrated flammable gas leakage detection and alarm function. They can also achieve gas leakage localization with satisfactory precision when deployed in one single room. These successes promote the development of using nanostructured-gas-sensor network for wide range applications including smart home/building and future smart city.

Is Poly(methyl methacrylate) (PMMA) a Suitable Substrate for ALD?: A Review

Poly (methyl methacrylate) (PMMA) is a thermoplastic synthetic polymer, which displays superior characteristics such as transparency, good tensile strength, and processability. Its performance can be improved by surface engineering via the use of functionalized thin film coatings, resulting in its versatility across a host of applications including, energy harvesting, dielectric layers and water purification. Modification of the PMMA surface can be achieved by atomic layer deposition (ALD), a vapor-phase, chemical deposition technique, which permits atomic-level control. However, PMMA presents a challenge for ALD due to its lack of active surface sites, necessary for gas precursor reaction, nucleation, and subsequent growth. The purpose of this review is to discuss the research related to the employment of PMMA as either a substrate, support, or masking layer over a range of ALD thin film growth techniques, namely, thermal, plasma-enhanced, and area-selective atomic layer deposition. It also highlights applications in the selected fields of flexible electronics, biomaterials, sensing, and photocatalysis, and underscores relevant characterization techniques. Further, it concludes with a prospective view of the role of ALD in PMMA processing.

ZnO nucleation into trititanate nanotubes by ALD equipment techniques, a new way to functionalize layered metal oxides

In this contribution, we explore the potential of atomic layer deposition (ALD) techniques for developing new semiconductor metal oxide composites. Specifically, we investigate the functionalization of multi-wall trititanate nanotubes, H₂Ti₃O₇ NTs (sample T1) with zinc oxide employing two different ALD approaches: vapor phase metalation (VPM) using diethylzinc (Zn(C₂H₅)₂, DEZ) as a unique ALD precursor, and multiple pulsed vapor phase infiltration (MPI) using DEZ and water as precursors. We obtained two different types of tubular H₂Ti₃O₇ species containing ZnO in their structures. Multi-wall trititanate nanotubes with ZnO intercalated inside the tube wall sheets were the main products from the VPM infiltration (sample T2). On the other hand, MPI (sample T3) principally leads to single-wall nanotubes with a ZnO hierarchical bi-modal functionalization, thin film coating, and surface decorated with ZnO particles. The products were mainly characterized by electron microscopy, energy dispersive X-ray, powder X-ray diffraction, Fourier transform infrared spectroscopy, and X-ray photoelectron spectroscopy. An initial evaluation of the optical characteristics of the products demonstrated that they behaved as semiconductors. The IR study revealed the role of water, endogenous and/or exogenous, in determining the structure and properties of the products. The results confirm that ALD is a versatile tool, promising for developing tailor-made semiconductor materials.

Applications of Plasma-Assisted Systems for Advanced Electrode Material Synthesis and Modification

Research on advanced electrode materials (AEMs) has been explosive for the past decades and constantly promotes the development of batteries, supercapacitors, electrocatalysis, and photovoltaic applications. However, traditional preparation and modification methods can no longer meet the increasing requirements of some AEMs because some of the special reactions are thermodynamically and/or kinetically unfavorable and thus need harsh conditions. Among various recently developed advanced materials synthesis and modification routes, the plasma-assisted (PA) method has received increasing attention because of its unique and different "species reactivity" nature, as well as its wider and adjustable operating conditions. In this Spotlight on Applications, we highlight some recent developments and describe our recent progress by applying PA systems in the synthesis and modification of AEMs, including direct processing, PA deposition, and plasma milling (P-milling). The mechanisms of how plasma works for specific reactions are reviewed and discussed. It is shown that the PA technique has become a powerful and efficient tool in the following areas, including but not limited to materials synthesis, doping, surface modification, and functionalization. Finally, the prospect and challenges are also proposed for AEM preparation and modification using PA systems. This article aims to provide up-to-date information about the progress of PA technology in the fields of chemistry and materials science.

Modulation of the adsorption chemistry of a precursor in atomic layer deposition to enhance the growth per cycle of a TiO2 thin film

Atomic layer deposition (ALD) has scarcely been utilized in large-scale manufacturing and industrial processes due to its low productivity, even though it possesses several advantages for improving the device performance. The major cause of its low productivity is the slow growth rate, which is determined by the amount of chemisorbed precursor. The slow growth rate of ALD has become even more critical due to the introduction of heteroleptic-based precursors for achieving a higher thermal stability. In this study, we investigated the theoretical and experimental chemisorption characteristics of the Ti(CpMe5)(OMe)3 precursor during the ALD of TiO2. By density functional theory calculations, the relationship between the steric hindrance effect and the chemistry of a chemisorbed precursor was revealed. Based on the calculation result, a way for improving the growth per cycle by 50% was proposed and demonstrated, successfully.

Atomic layer deposition on dental materials: Processing conditions and surface functionalization to improve physical, chemical, and clinical properties - A review

Surface functionalization is an effective approach to improve and enhance the properties of dental materials. A review of atomic layer deposition (ALD) in the field of dental materials is presented. ALD is a well-established thin film deposition technique. It is being used for surface functionalization in different technologies and biological related applications. With film thickness control down to Ångström length scale and uniform conformal thin films even on complex 3D substrates, high quality thin films and their reproducibility are noteworthy advantages of ALD over other thin film deposition methods. Low temperature ALD allows temperature sensitive substrates to be functionalized with high quality ultra-thin films too. In the current work, ALD is elaborated as a promising method for surface modification of dental materials. Different aspects of conventional dental materials that can be enhanced using ALD are discussed. Also, the influence of different ALD thin films and their microstructure on the surface properties, corrosion-resistance, antibacterial activity, biofilm formation, and osteoblast compatibility are addressed. Depending on the stage of advancement for the studied materials reported in the literature, these studies are then categorized into four stages: fabrication & characterization, in vitro studies, in vivo studies, and human tests. Materials coated with ALD thin films with potential dental applications are also presented here and they are categorized as stage 1. The purpose of this review is to organize and present the up to date ALD research on dental materials. The current study can serve as a guide for future work on using ALD for surface functionalization and resulting property tuning of materials in real world dental applications.

The Influence of ZnO Oxide Layer on the Physicochemical Behavior of Ti6Al4V Titanium Alloy

Titanium and its alloys are characterized by high biocompatibility and good corrosion resistance as a result of the ability to form a TiO₂ oxide layer. However, based on literature data it can be concluded that titanium degradation products, in the form of titanium particles, metal-protein groups, oxides and ions, may cause allergic, inflammatory reactions and bone resorption. The corrosion process of Ti6Al4V in the human body environment may be intensified by a decreased pH and concentration of chloride compounds. The purpose of this article was to analyze the corrosion resistance of the Ti6Al4V alloy, obtained by the selective laser melting method in a corrosion solution of neutral pH and in a solution simulating peri-implant inflammatory conditions. Additionally, the influence of zinc oxide deposited by the atomic layer deposition method on the improvement of the physicochemical behavior of the Ti6Al4V alloy was analyzed. In order to characterize the ZnO layer, tests of chemical and phase composition as well as surface morphology investigation were performed. As part of the assessment of the physicochemical properties of the uncoated samples and those with the ZnO layer, tests of wetting angle, pitting corrosion and impedance corrosion were carried out. The number of ions released after the potentiodynamic test were measured using the inductively coupled plasma atomic emission spectrometry (ICP-AES) method. It can be concluded that samples after surface modification (with the ZnO layer) were characterized by favorable physicochemical properties and had higher corrosion resistance.

Inorganic Materials by Atomic Layer Deposition for Perovskite Solar Cells

Organic–inorganic hybrid perovskite solar cells (PSCs) have received much attention with their rapid progress during the past decade, coming close to the point of commercialization. Various approaches in the process of PSC development have been explored with the motivation to enhance the solar cell power conversion efficiency—while maintaining good device stability from light, temperature, and moisture—and simultaneously optimizing for scalability. Atomic layer deposition (ALD) is a powerful tool in depositing pinhole-free conformal thin-films with excellent reproducibility and accurate and simple control of thickness and material properties over a large area at low temperatures, making it a highly desirable tool to fabricate components of highly efficient, stable, and scalable PSCs. This review article summarizes ALD’s recent contributions to PSC development through charge transport layers, passivation layers, and buffer and recombination layers for tandem applications and encapsulation techniques. The future research directions of ALD in PSC progress and the remaining challenges will also be discussed.

Characterization of Electrical Traps Formed in Al2O3 under Various ALD Conditions

Frequency dispersion in the accumulation region seen in multifrequency capacitance-voltage characterization, which is believed to be caused mainly by border traps, is a concerning issue in present-day devices. Because these traps are a fundamental property of oxides, their formation is expected to be affected to some extent by the parameters of oxide growth caused by atomic layer deposition (ALD). In this study, the effects of variation in two ALD conditions, deposition temperature and purge time, on the formation of near-interfacial oxide traps in the Al₂O₃ dielectric are examined. In addition to the evaluation of these border traps, the most commonly examined electrical traps-i.e., interface traps-are also investigated along with the hysteresis, permittivity, reliability, and leakage current. The results reveal that a higher deposition temperature helps to minimize the formation of border traps and suppress leakage current but adversely affects the oxide/semiconductor interface and the permittivity of the deposited film. In contrast, a longer purge time provides a high-quality atomic-layer-deposited film which has fewer electrical traps and reasonable values of permittivity and breakdown voltage. These findings indicate that a moderate ALD temperature along with a sufficiently long purge time will provide an oxide film with fewer electrical traps, a reasonable permittivity, and a low leakage current.

Preparation and Characterization of NbxOy Thin Films: A Review

Niobium oxides (NbO, NbO2, Nb2O5), being a versatile material has achieved tremendous popularity to be used in a number of applications because of its outstanding electrical, mechanical, chemical, and magnetic properties. NbxOy films possess a direct band gap within the ranges of 3.2–4.0 eV, with these films having utility in different applications which include; optical systems, stainless steel, ceramics, solar cells, electrochromic devices, capacitor dielectrics, catalysts, sensors, and architectural requirements. With the purpose of fulfilling the requirements of a vast variety of the named applications, thin films having comprehensive properties span described by film composition, morphology, structural properties, and thickness are needed. The theory, alongside the research status of the different fabrication techniques of NbxOy thin films are reported in this work. The impact of fabrication procedures on the thin film characteristics which include; film thickness, surface quality, optical properties, interface properties, film growth, and crystal phase is explored with emphases on the distinct deposition process applied, are also described and discussed.

Direct comparison of ferroelectric properties in Hf0.5Zr0.5O2 between thermal and plasma-enhanced atomic layer deposition

Since the discovery of ferroelectricity in doped/alloyed HfO₂ and ZrO₂ thin film, many device engineers have been attracted to its sustainable ferroelectricity at the thickness of a few nanometer. While most of the previous studies have mainly focused on the ferroelectric properties of the thermally atomic layer deposited (THALD) Hf_0.5Zr_0.5O₂ (HZO), the plasma-enhanced ALD (PEALD) HZO has not received much attention. In this work, a direct comparison between the two types of HZO thin films is carried out, where we found that a tradeoff exists between these two fabrication methods. While the THALD HZO was able to maintain a higher cycling endurance, the PEALD HZO showed more stable characteristics over the cycling with reduced wake-up and fatigue effects, in addition to better tolerance against breakdown under high electric field. Furthermore, the PEALD HZO could be crystallized with post deposition annealing at 350 °C, which is of great interest for the back-end-of-line compatibility with silicon fabrication processes.

High-Temperature Atomic Layer Deposition of GaN on 1D Nanostructures

Silica nanosprings (NS) were coated with gallium nitride (GaN) by high-temperature atomic layer deposition. The deposition temperature was 800 °C using trimethylgallium (TMG) as the Ga source and ammonia (NH₃) as the reactive nitrogen source. The growth of GaN on silica nanosprings was compared with deposition of GaN thin films to elucidate the growth properties. The effects of buffer layers of aluminum nitride (AlN) and aluminum oxide (Al₂O₃) on the stoichiometry, chemical bonding, and morphology of GaN thin films were determined with X-ray photoelectron spectroscopy (XPS), high-resolution x-ray diffraction (HRXRD), and atomic force microscopy (AFM). Scanning and transmission electron microscopy of coated silica nanosprings were compared with corresponding data for the GaN thin films. As grown, GaN on NS is conformal and amorphous. Upon introducing buffer layers of Al₂O₃ or AlN or combinations thereof, GaN is nanocrystalline with an average crystallite size of 11.5 ± 0.5 nm. The electrical properties of the GaN coated NS depends on whether or not a buffer layer is present and the choice of the buffer layer. In addition, the IV curves of GaN coated NS and the thin films (TF) with corresponding buffer layers, or lack thereof, show similar characteristic features, which supports the conclusion that atomic layer deposition (ALD) of GaN thin films with and without buffer layers translates to 1D nanostructures.

Evaluating effectiveness of dust by-product treatment with scrubbers to mitigate explosion risk in ZrO2 atomic layer deposition process

In processes of manufacturing semiconductors, reactive by-products (as a form of fine powder, i.e., dust) are deposited in pipes installed on post processing and exhaust systems, potentially involving a considerable explosion risk. In this study, the effectiveness of scrubber methods (e.g., dry scrubber and burn-wet scrubber) to mitigate the risk was evaluated. To this end, three by-products generated from a ZrO₂ atomic layer deposition (ALD) process were collected from semiconductor manufacturers, which were treated with different methods (i.e., no treatment, treatment using dry scrubber, and treatment using burn-wet scrubber), and their characteristics were analyzed and compared. Particle size measurements of the by-products proved that the burn-wet scrubber treatment less decreased their particle size than the dry scrubber treatment. The burn-wet scrubber treatment made the by-product thermally stable, confirmed by thermogravimetric analysis. Fourier-transform infrared spectroscopy of the by-products before and after the scrubber treatments showed that burn-wet scrubbing of the by-product decreases surface functionalities that play a role in explosion. Dust explosion testing proved that robustness of explosion of the untreated by-product is about 7 times higher than the by-product treated with the burn-wet scrubber. Based on the results of this study, it would be suggested that burn-wet scrubber is a useful treatment method to decrease the explosion risks caused by dust by-products generated from ALD in semiconductor manufacturing processes.