Scanning tunneling spectroscopy of graphene on graphite

Optical signatures of parity anomaly in a gapped graphene-like system

Parity anomaly refers to the violation of coordinate reflection symmetry induced by the quantum fluctuations. It is proposed to exist in a graphene-like system with a finite bare mass for Dirac fermions, and manifests itself as a parity-violating quantum correction to the current of each species of fermions. Coulomb interaction greatly increases the fermion mass, and produces various types of excitons. Of particular interest is the ρ-exciton, which is directly connected to parity anomaly and can be generated by absorbing a specific photon. The exciton is a particle-hole bound state, and can be regarded as condensed-matter analogue of meson composed of quark-anti-quark pair. By virtue of this correspondence, we analyze the optical conductivity and calculate the mass of ρ-exciton by employing the Shifman-Vainshtein-Zakharov sum rule method that is widely used in the studies of hadron phenomenology. We show that ρ-exciton leads to a sharp peak in the optical conductivity, which is observable in optical experiments. Moreover, we study the impact of scalar-like excitons on two-photon processes by computing the decay amplitude, and also find peaks in the Raman spectra.

Optical properties of monolayer tinene in electric fields

The absorption spectra of monolayer tinene in perpendicular electric fields are studied by the tight-binding model. There are three kinds of special structures, namely shoulders, logarithmical symmetric peaks and asymmetric peaks in the square-root form, corresponding to the optical excitations of the extreme points, saddle points and constant-energy loops. With the increasing field strength, two splitting shoulder structures, which are dominated by the parabolic bands of 5p z orbitals, come to exist because of the spin-split energy bands. The frequency of threshold shoulder declines to zero and then linearly grows. The third shoulder at 0.75~0.85 eV mainly comes from (5p x , 5p y ) orbitals. The former and the latter orbitals, respectively, create the saddle-point symmetric peaks near the M point, while they hybridize with one another to generate the loop-related asymmetric peaks. Tinene quite differs from graphene, silicene, and germanene. The special relationship among the multi-orbital chemical bondings, spin-orbital couplings and Coulomb potentials accounts for the feature-rich optical properties.

Alkali-created rich properties in grapheme nanoribbons: Chemical bondings

The alkali-adsorbed graphene nanoribbons exhibit the feature-rich electronic and magnetic properties. From the first-principles calculations, there are only few adatom-dominated conduction bands, and the other conduction and valence bands are caused by carbon atoms. A lot of free electrons are revealed in the occupied alkali- and carbon-dependent conduction bands. Energy bands are sensitive to the concentration, distribution and kind of adatom and the edge structure, while the total linear free carrier density only relies on the first one. These mainly arise from a single s − 2p_z orbital hybridization in the adatom-carbon bond. Specifically, zigzag systems can present the anti-ferromagnetic ordering across two edges, ferromagnetic ordering along one edge and non-magnetism, being reflected in the edge-localized energy bands with or without spin splitting. The diverse energy dispersions contribute many special peaks in density of states. The critical chemical bonding and the distinct spin configuration could be verified from the experimental measurements.

Inter-Layer Coupling Induced Valence Band Edge Shift in Mono- to Few-Layer MoS2

Recent progress in the synthesis of monolayer MoS2, a two-dimensional direct band-gap semiconductor, is paving new pathways toward atomically thin electronics. Despite the large amount of literature, fundamental gaps remain in understanding electronic properties at the nanoscale. Here, we report a study of highly crystalline islands of MoS2 grown via a refined chemical vapor deposition synthesis technique. Using high resolution scanning tunneling microscopy and spectroscopy (STM/STS), photoemission electron microscopy/spectroscopy (PEEM) and μ-ARPES we investigate the electronic properties of MoS2 as a function of the number of layers at the nanoscale and show in-depth how the band gap is affected by a shift of the valence band edge as a function of the layer number. Green's function based electronic structure calculations were carried out in order to shed light on the mechanism underlying the observed bandgap reduction with increasing thickness, and the role of the interfacial Sulphur atoms is clarified. Our study, which gives new insight into the variation of electronic properties of MoS2 films with thickness bears directly on junction properties of MoS2, and thus impacts electronics application of MoS2.

Direct Probing of the Electronic Structures of Single-Layer and Bilayer Graphene with a Hexagonal Boron Nitride Tunneling Barrier

The chemical and mechanical stability of hexagonal boron nitride (h-BN) thin films and their compatibility with other free-standing two-dimensional (2D) crystals to form van der Waals heterostructures make the h-BN-2D tunnel junction an intriguing experimental platform not only for the engineering of specific device functionalities but also for the promotion of quantum measurement capabilities. Here, we exploit the h-BN-graphene tunnel junction to directly probe the electronic structures of single-layer and bilayer graphene in the presence and the absence of external magnetic fields with unprecedented high signal-to-noise ratios. At a zero magnetic field, we identify the tunneling spectra related to the charge neutrality point and the opening of the electric-field-induced bilayer energy gap. In the quantum Hall regime, the quantization of 2D electron gas into Landau levels (LL) is seen as early as 0.2 T, and as many as 30 well-separated LL tunneling conductance oscillations are observed for both electron- and hole-doped regions. Our device simulations successfully reproduce the experimental observations. Additionally, we extract the relative permittivity of three-to-five layer h-BN and find that the screening capability of thin h-BN films is as much as 60% weaker than bulk h-BN.

Chemical functionalization and characterization of graphene-based materials

This review offers an overview on the chemical functionalization, characterization and applications of graphene-based materials.

Correlation Effects in Scanning Tunneling Microscopy Images of Molecules Revealed by Quantum Monte Carlo

Scanning tunneling microscopy (STM) and spectroscopy probe the local density of states of single molecules electrically insulated from the substrate. The experimental images, although usually interpreted in terms of single-particle molecular orbitals, are associated with quasiparticle wave functions dressed by the whole electron-electron interaction. Here we propose an ab initio approach based on quantum Monte Carlo to calculate the quasiparticle wave functions of molecules. Through the comparison between Monte Carlo wave functions and their uncorrelated Hartree-Fock counterparts we visualize the electronic correlation embedded in the simulated STM images, highlighting the many-body features that might be observed.

Scanning Tunneling Microscopy of the π Magnetism of a Single Carbon Vacancy in Graphene

Pristine graphene is strongly diamagnetic. However, graphene with single carbon atom defects could exhibit paramagnetism. Theoretically, the π magnetism induced by the monovacancy in graphene is characteristic of two spin-split density-of-states (DOS) peaks close to the Dirac point. Since its prediction, many experiments have attempted to study this π magnetism in graphene, whereas only a notable resonance peak has been observed around the atomic defects, leaving the π magnetism experimentally elusive. Here, we report direct experimental evidence of π magnetism by using a scanning tunneling microscope. We demonstrate that the localized state of the atomic defects is split into two DOS peaks with energy separations of several tens of meV. Strong magnetic fields further increase the energy separations of the two spin-polarized peaks and lead to a Zeeman-like splitting. Unexpectedly, the effective g factor around the atomic defect is measured to be about 40, which is about 20 times larger than the g factor for electron spins.

Switch on the high thermal conductivity of graphene paper

This work reports on the discovery of a high thermal conductivity (κ) switch-on phenomenon in high purity graphene paper (GP) when its temperature is reduced from room temperature down to 10 K. The κ after switch-on (1732 to 3013 W m^-1 K^-1) is 4-8 times that before switch-on. The triggering temperature is 245-260 K. The switch-on behavior is attributed to the thermal expansion mismatch between pure graphene flakes and impurity-embedded flakes. This is confirmed by the switch behavior of the temperature coefficient of resistance. Before switch-on, the interactions between pure graphene flakes and surrounding impurity-embedded flakes efficiently suppress phonon transport in GP. After switch-on, the structure separation frees the pure graphene flakes from the impurity-embedded neighbors, leading to a several-fold κ increase. The measured κ before and after switch-on is consistent with the literature reported κ values of supported and suspended graphene. By conducting comparison studies with pyrolytic graphite, graphene oxide paper and partly reduced graphene paper, the whole physical picture is illustrated clearly. The thermal expansion induced switch-on is feasible only for high purity GP materials. This finding points out a novel way to switch on/off the thermal conductivity of graphene paper based on substrate-phonon scattering.

Electronic and optical properties of graphene nanoribbons in external fields

A review work is done for the electronic and optical properties of graphene nanoribbons in magnetic, electric, composite, and modulated fields. Effects due to the lateral confinement, curvature, stacking, non-uniform subsystems and hybrid structures are taken into account. The special electronic properties, induced by complex competitions between external fields and geometric structures, include many one-dimensional parabolic subbands, standing waves, peculiar edge-localized states, width- and field-dependent energy gaps, magnetic-quantized quasi-Landau levels, curvature-induced oscillating Landau subbands, crossings and anti-crossings of quasi-Landau levels, coexistence and combination of energy spectra in layered structures, and various peak structures in the density of states. There exist diverse absorption spectra and different selection rules, covering edge-dependent selection rules, magneto-optical selection rule, splitting of the Landau absorption peaks, intragroup and intergroup Landau transitions, as well as coexistence of monolayer-like and bilayer-like Landau absorption spectra. Detailed comparisons are made between the theoretical calculations and experimental measurements. The predicted results, the parabolic subbands, edge-localized states, gap opening and modulation, and spatial distribution of Landau subbands, have been identified by various experimental measurements.

Nanoscale Electrochemistry of sp(2) Carbon Materials: From Graphite and Graphene to Carbon Nanotubes

Carbon materials have a long history of use as electrodes in electrochemistry, from (bio)electroanalysis to applications in energy technologies, such as batteries and fuel cells. With the advent of new forms of nanocarbon, particularly, carbon nanotubes and graphene, carbon electrode materials have taken on even greater significance for electrochemical studies, both in their own right and as components and supports in an array of functional composites. With the increasing prominence of carbon nanomaterials in electrochemistry comes a need to critically evaluate the experimental framework from which a microscopic understanding of electrochemical processes is best developed. This Account advocates the use of emerging electrochemical imaging techniques and confined electrochemical cell formats that have considerable potential to reveal major new perspectives on the intrinsic electrochemical activity of carbon materials, with unprecedented detail and spatial resolution. These techniques allow particular features on a surface to be targeted and models of structure-activity to be developed and tested on a wide range of length scales and time scales. When high resolution electrochemical imaging data are combined with information from other microscopy and spectroscopy techniques applied to the same area of an electrode surface, in a correlative-electrochemical microscopy approach, highly resolved and unambiguous pictures of electrode activity are revealed that provide new views of the electrochemical properties of carbon materials. With a focus on major sp(2) carbon materials, graphite, graphene, and single walled carbon nanotubes (SWNTs), this Account summarizes recent advances that have changed understanding of interfacial electrochemistry at carbon electrodes including: (i) Unequivocal evidence for the high activity of the basal surface of highly oriented pyrolytic graphite (HOPG), which is at least as active as noble metal electrodes (e.g., platinum) for outer-sphere redox processes. (ii) Demonstration of the high activity of basal plane HOPG toward other reactions, with no requirement for catalysis by step edges or defects, as exemplified by studies of proton-coupled electron transfer, redox transformations of adsorbed molecules, surface functionalization via diazonium electrochemistry, and metal electrodeposition. (iii) Rationalization of the complex interplay of different factors that determine electrochemistry at graphene, including the source (mechanical exfoliation from graphite vs chemical vapor deposition), number of graphene layers, edges, electronic structure, redox couple, and electrode history effects. (iv) New methodologies that allow nanoscale electrochemistry of 1D materials (SWNTs) to be related to their electronic characteristics (metallic vs semiconductor SWNTs), size, and quality, with high resolution imaging revealing the high activity of SWNT sidewalls and the importance of defects for some electrocatalytic reactions (e.g., the oxygen reduction reaction). The experimental approaches highlighted for carbon electrodes are generally applicable to other electrode materials and set a new framework and course for the study of electrochemical and interfacial processes.

Atomic resolution of nitrogen-doped graphene on Cu foils

Atomic-level substitutional doping can significantly tune the electronic properties of graphene. Using low-temperature scanning tunneling microscopy and spectroscopy, the atomic-scale crystalline structure of graphene grown on polycrystalline Cu, the distribution of nitrogen dopants and their effect on the electronic properties of graphene were investigated. Both the graphene sheet growth and nitrogen doping were performed using microwave plasma-enhanced chemical vapor deposition. The results indicated that the nitrogen dopants preferentially sit at the grain boundaries of the graphene sheets and confirmed that plasma treatment is a potential method to incorporate foreign atoms into the graphene lattice to tailor the graphene's electronic properties.

Gate-Tunable Landau Level Filling and Spectroscopy in Coupled Massive and Massless Electron Systems

We report transport studies on coupled massive and massless electron systems, realized using twisted monolayer-graphene-natural bilayer-graphene stacks. We incorporate the layers in a dual-gated transistor geometry enabling independently tuning their charge density and the perpendicular electric field. In a perpendicular magnetic field, we observe a distinct pattern of gate-tunable Landau level crossings. Screening and interlayer electron-electron interactions yield a nonlinear monolayer gate capacitance. Data analysis enables determination of the monolayer's Fermi velocity and the bilayer's effective mass. The mass obtained is larger than that expected for isolated bilayers, suggesting that the interlayer interactions renormalize the band structure.

Direct imaging of topological edge states at a bilayer graphene domain wall

The AB–BA domain wall in gapped graphene bilayers is a rare naked structure hosting topological electronic states. Although it has been extensively studied in theory, a direct imaging of its topological edge states is still missing. Here we image the topological edge states at the graphene bilayer domain wall by using scanning tunnelling microscope. The simultaneously obtained atomic-resolution images of the domain wall provide us unprecedented opportunities to measure the spatially varying edge states within it. The one-dimensional conducting channels are observed to be mainly located around the two edges of the domain wall, which is reproduced quite well by our theoretical calculations. Our experiment further demonstrates that the one-dimensional topological states are quite robust even in the presence of high magnetic fields. The result reported here may raise hopes of graphene-based electronics with ultra-low dissipation.

Domain wall between gapped graphene bilayers is believed to host one-dimensional topological states, which is yet waiting for direct evidences. Here, Yin et al. report images of the AB-BA stacked bilayer graphene domain wall, providing direct evidence for topological edge states in such system.

Local, global, and nonlinear screening in twisted double-layer graphene

One-atom-thick crystalline layers and their vertical heterostructures carry the promise of designer electronic materials that are unattainable by standard growth techniques. To realize their potential it is necessary to isolate them from environmental disturbances, in particular those introduced by the substrate. However, finding and characterizing suitable substrates, and minimizing the random potential fluctuations they introduce, has been a persistent challenge in this emerging field. Here we show that Landau-level (LL) spectroscopy offers the unique capability to quantify both the reduction of the quasiparticles' lifetime and the long-range inhomogeneity due to random potential fluctuations. Harnessing this technique together with direct scanning tunneling microscopy and numerical simulations we demonstrate that the insertion of a graphene buffer layer with a large twist angle is a very effective method to shield a 2D system from substrate interference that has the additional desirable property of preserving the electronic structure of the system under study. We further show that owing to its remarkable nonlinear screening capability a single graphene buffer layer provides better shielding than either increasing the distance to the substrate or doubling the carrier density and reduces the amplitude of the potential fluctuations in graphene to values even lower than the ones in AB-stacked bilayer graphene.

Scanning Tunneling Microscopy and Spectroscopy of Air Exposure Effects on Molecular Beam Epitaxy Grown WSe2 Monolayers and Bilayers

The effect of air exposure on 2H-WSe2/HOPG is determined via scanning tunneling microscopy (STM). WSe2 was grown by molecular beam epitaxy on highly oriented pyrolytic graphite (HOPG), and afterward, a Se adlayer was deposited in situ on WSe2/HOPG to prevent unintentional oxidation during transferring from the growth chamber to the STM chamber. After annealing at 773 K to remove the Se adlayer, STM images show that WSe2 layers nucleate at both step edges and terraces of the HOPG. Exposure to air for 1 week and 9 weeks caused air-induced adsorbates to be deposited on the WSe2 surface; however, the band gap of the terraces remained unaffected and nearly identical to those on decapped WSe2. The air-induced adsorbates can be removed by annealing at 523 K. In contrast to WSe2 terraces, air exposure caused the edges of the WSe2 to oxidize and form protrusions, resulting in a larger band gap in the scanning tunneling spectra compared to the terraces of air-exposed WSe2 monolayers. The preferential oxidation at the WSe2 edges compared to the terraces is likely the result of dangling edge bonds. In the absence of air exposure, the dangling edge bonds had a smaller band gap compared to the terraces and a shift of about 0.73 eV in the Fermi level toward the valence band. However, after air exposure, the band gap of the oxidized WSe2 edges became about 1.08 eV larger than that of the WSe2 terraces, resulting in the electronic passivation of the WSe2.

Room temperature observation of the correlation between atomic and electronic structure of graphene on Cu(110)

We have used atomically-resolved scanning tunneling microscopy and spectroscopy to study the interplay between the atomic and electronic structure of graphene formed on copper via chemical vapor deposition.

Electrochemistry of Fe3+/2+ at highly oriented pyrolytic graphite (HOPG) electrodes: kinetics, identification of major electroactive sites and time effects on the response

Electron transfer kinetics of Fe^3+/2+ on HOPG is as fast as on metals, with the electroactivity dominated by basal plane.

Liquid-assisted tip manipulation: fabrication of twisted bilayer graphene superlattices on HOPG

We use the tip of a scanning tunneling microscope (STM) to manipulate single weakly bound nanometer-sized sheets on a highly oriented pyrolytic graphite (HOPG) surface through artificially increasing the tip and sample interaction by pretreatment of the surface using a liquid thiol molecule. By this means it is possible to tear apart a graphite sheet against a step and fold this part onto the HOPG surface and thus generate graphene superlattices with hexagonal symmetry. The tip and sample surface interactions, including the van der Waals force, electrostatic force and capillary attraction force originating from the Laplace pressure due to the formation of a highly curved fluid meniscus connecting the tip and sample, are discussed quantitatively to understand the formation mechanism of a graphene superlattice induced by the STM tip. The capillary force plays a key role in manipulating the graphite surface sheet under humid conditions. Our approach provides a simple and feasible route to prepare controllable superlattices and graphene nanoribbons and also to better understand the process of generation of a graphene superlattice on the surface of HOPG with the tip.

Magneto-electronic properties of multilayer graphenes

This article reviews the rich magneto-electronic properties of multilayer graphene systems. Multilayer graphenes are built from graphene sheets attracting one another by van der Waals forces; the magneto-electronic properties are diversified by the number of layers and the stacking configurations. For an N-layer system, Landau levels are divided into N groups, with each identified by a dominant sublattice associated with the stacking configuration. We focus on the main characteristics of Landau levels, including the degeneracy, wave functions, quantum numbers, onset energies, field-dependent energy spectra, semiconductor-metal transitions, and crossing patterns, which are reflected in the magneto-optical spectroscopy, scanning tunneling spectroscopy, and quantum transport experiments. The Landau levels in AA-stacked graphene are responsible for multiple Dirac cones, while in AB-stacked graphene the Dirac properties depend on the number of graphene layers, and in ABC-stacked graphene the low-lying levels are related to surface states. The Landau-level mixing leads to anticrossings patterns in energy spectra, which are seen for intergroup Landau levels in AB-stacked graphene, while in particular, a formation of both intergroup and intragroup anticrossings is observed in ABC-stacked graphene. The aforementioned magneto-electronic properties lead to diverse optical spectra, plasma spectra, and transport properties when the stacking order and the number of layers are varied. The calculations are in agreement with optical and transport experiments, and novel features that have not yet been verified experimentally are presented.

Redox-dependent spatially resolved electrochemistry at graphene and graphite step edges

The electrochemical (EC) behavior of mechanically exfoliated graphene and highly oriented pyrolytic graphite (HOPG) is studied at high spatial resolution in aqueous solutions using Ru(NH3)6(3+/2+) as a redox probe whose standard potential sits close to the intrinsic Fermi level of graphene and graphite. When scanning electrochemical cell microscopy (SECCM) data are coupled with that from complementary techniques (AFM, micro-Raman) applied to the same sample area, different time-dependent EC activity between the basal planes and step edges is revealed. In contrast, other redox couples (ferrocene derivatives) whose potential is further removed from the intrinsic Fermi level of graphene and graphite show uniform and high activity (close to diffusion-control). Macroscopic voltammetric measurements in different environments reveal that the time-dependent behavior after HOPG cleavage, peculiar to Ru(NH3)6(3+/2+), is not associated particularly with any surface contaminants but is reasonably attributed to the spontaneous delamination of the HOPG with time to create partially coupled graphene layers, further supported by conductive AFM measurements. This process has a major impact on the density of states of graphene and graphite edges, particularly at the intrinsic Fermi level to which Ru(NH3)6(3+/2+) is most sensitive. Through the use of an improved voltammetric mode of SECCM, we produce movies of potential-resolved and spatially resolved HOPG activity, revealing how enhanced activity at step edges is a subtle effect for Ru(NH3)6(3+/2+). These latter studies allow us to propose a microscopic model to interpret the EC response of graphene (basal plane and edges) and aged HOPG considering the nontrivial electronic band structure.

Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

We present the science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts and benefits reaching into most areas of society. This roadmap was developed within the framework of the European Graphene Flagship and outlines the main targets and research areas as best understood at the start of this ambitious project. We provide an overview of the key aspects of graphene and related materials (GRMs), ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries. We also define an extensive list of acronyms in an effort to standardize the nomenclature in this emerging field.

Large changes of graphene conductance as a function of lattice orientation between stacked layers

Using the conductive tip of an atomic force microscope as an electrode, we found that the electrical conductance of graphite terraces separated by steps can vary by large factors of up to 100, depending on the relative lattice orientation of the surface and subsurface layers. This effect can be attributed to interlayer interactions that, when stacked commensurately in a Bernal sequence (ABAB...), cause the band gap to open. Misaligned layers, on the other hand, behave like graphene. Angular misorientations of a few degrees were found to cause large increases in the conductance of the top layer, with the maximum occurring around 30°. These results suggest new applications for graphene multilayers by stacking layers at various angles to control the resistance of the connected graphene ribbons in devices.

Theoretical study of polyiodide formation and stability on monolayer and bilayer graphene

Insights of DFT calculations on the formation of polyiodide complexes and their thermal stability on graphene based nanostructures.

Nanoparticle characterization based on STM and STS

Scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) can characterize intriguing nanoparticle properties towards solid-state nanodevices.

Transport of massless Dirac fermions in non-topological type edge states

There are two types of intrinsic surface states in solids. The first type is formed on the surface of topological insulators. Recently, transport of massless Dirac fermions in the band of “topological” states has been demonstrated. States of the second type were predicted by Tamm and Shockley long ago. They do not have a topological background and are therefore strongly dependent on the properties of the surface. We study the problem of the conductivity of Tamm-Shockley edge states through direct transport experiments. Aharonov-Bohm magneto-oscillations of resistance are found on graphene samples that contain a single nanohole. The effect is explained by the conductivity of the massless Dirac fermions in the edge states cycling around the nanohole. The results demonstrate the deep connection between topological and non-topological edge states in 2D systems of massless Dirac fermions.

MoS 2 MoS2: choice substrate for accessing and tuning the electronic properties of graphene

One of the enduring challenges in graphene research and applications is the extreme sensitivity of its charge carriers to external perturbations, especially those introduced by the substrate. The best available substrates to date, graphite and hexagonal boron nitride (h-BN), still pose limitations: graphite being metallic does not allow gating, while both h-BN and graphite, having lattice structures closely matched to that of graphene, may cause significant band structure reconstruction. Here we show that the atomically smooth surface of exfoliated MoS(2) provides access to the intrinsic electronic structure of graphene without these drawbacks. Using scanning tunneling microscopy and Landau-level (LL) spectroscopy in a device configuration that allows tuning of the carrier concentration, we find that graphene on MoS(2) is ultraflat, producing long mean free paths, while avoiding band structure reconstruction. Importantly, the screening of the MoS(2) substrate can be tuned by changing the position of the Fermi energy with relatively low gate voltages. We show that shifting the Fermi energy from the gap to the edge of the conduction band gives rise to enhanced screening and to a substantial increase in the mean free path and quasiparticle lifetime. MoS(2) substrates thus provide unique opportunities to access the intrinsic electronic properties of graphene and to study in situ the effects of screening on electron-electron interactions and transport.

Why does graphene behave as a weakly interacting system?

We address the puzzling weak-coupling perturbative behavior of graphene interaction effects as manifested experimentally, in spite of the effective fine structure constant being large, by calculating the effect of Coulomb interactions on the quasiparticle properties to next-to-leading order in the random phase approximation (RPA). The focus of our work is graphene suspended in vacuum, where electron-electron interactions are strong and the system is manifestly in a nonperturbative regime. We report results for the quasiparticle residue and the Fermi velocity renormalization at low carrier density. The smallness of the next-to-leading order corrections that we obtain demonstrates that the RPA theory converges rapidly and thus, in contrast to the usual perturbative expansion in the bare coupling constant, constitutes a quantitatively predictive theory of graphene many-body physics for any coupling strength.

Probing electronic excitations in mono- to pentalayer graphene by micro magneto-Raman spectroscopy

We probe electronic excitations between Landau levels in freestanding N-layer graphene over a broad energy range, with unprecedented spectral and spatial resolution, using micro magneto-Raman scattering spectroscopy. A characteristic evolution of electronic bands in up to five Bernal-stacked graphene layers is evidenced and shown to remarkably follow a simple theoretical approach, based on an effective bilayer model. (N > 3)-layer graphenes appear as appealing candidates in the quest for novel phenomena, particularly in the quantum Hall effect regime. Our work paves the way toward minimally invasive investigations of magneto-excitons in other emerging low-dimensional systems, with a spatial resolution down to 1 μm.

Graphene on hexagonal boron nitride

The field of graphene research has developed rapidly since its first isolation by mechanical exfoliation in 2004. Due to the relativistic Dirac nature of its charge carriers, graphene is both a promising material for next-generation electronic devices and a convenient low-energy testbed for intrinsically high-energy physical phenomena. Both of these research branches require the facile fabrication of clean graphene devices so as not to obscure its intrinsic physical properties. Hexagonal boron nitride has emerged as a promising substrate for graphene devices as it is insulating, atomically flat and provides a clean charge environment for the graphene. Additionally, the interaction between graphene and boron nitride provides a path for the study of new physical phenomena not present in bare graphene devices. This review focuses on recent advancements in the study of graphene on hexagonal boron nitride devices from the perspective of scanning tunneling microscopy with highlights of some important results from electrical transport measurements.

Tailoring the electronic structure in bilayer molybdenum disulfide via interlayer twist

Molybdenum disulfide bilayers with well-defined interlayer twist angle were constructed by stacking single-crystal monolayers. Varying interlayer twist angle results in strong tuning of the indirect optical transition energy and second-harmonic generation and weak tuning of direct optical transition energies and Raman mode frequencies. Electronic structure calculations show the interlayer separation changes with twist due to repulsion between sulfur atoms, resulting in shifts of the indirect optical transition energies. These results show that interlayer alignment is a crucial variable in tailoring the properties of two-dimensional heterostructures.

Screening charged impurities and lifting the orbital degeneracy in graphene by populating Landau levels

We report the observation of an isolated charged impurity in graphene and present direct evidence of the close connection between the screening properties of a 2D electron system and the influence of the impurity on its electronic environment. Using scanning tunneling microscopy and Landau level spectroscopy, we demonstrate that in the presence of a magnetic field the strength of the impurity can be tuned by controlling the occupation of Landau-level states with a gate voltage. At low occupation the impurity is screened, becoming essentially invisible. Screening diminishes as states are filled until, for fully occupied Landau levels, the unscreened impurity significantly perturbs the spectrum in its vicinity. In this regime we report the first observation of Landau-level splitting into discrete states due to lifting the orbital degeneracy.

Concluding remarks: there's nowt so queer as carbon electrodes

This contribution provides a personal overview and summary of Faraday Discussion 172 on “Carbon in Electrochemistry”, covering some of the key points made at the meeting within the broader context of other recent developments on carbon materials for electrochemical applications. Although carbon electrodes have a long history of use in electrochemistry, methods and techniques are only just becoming available that can test long-established models and identify key features for further exploration. This Discussion has highlighted the need for a better understanding of the impact of surface structure, defects, local density of electronic states, and surface functionality and contamination, in order to advance fundamental knowledge of various electrochemical processes and phenomena at carbon electrodes. These developments cut across important materials such as graphene, carbon nanotubes, conducting diamond and high surface area carbon materials. With more detailed pictures of structural and electronic controls of electrochemistry at carbon electrodes (and electrodes generally), will come rational advances in various technological applications, from sensors to energy technology (particularly batteries, supercapacitors and fuel cells), that have been well-illustrated at this Discussion.

Graphene for energy solutions and its industrialization

Graphene attracts intensive interest globally across academia and industry since the award of the Nobel Prize in Physics 2010. Within the last half decade, there has been an explosion in the number of scientific publications, patents and industry projects involved in this topic. On the other hand, energy is one of the biggest challenges of this century and related to the global sustainable economy. There are many reviews on graphene and its applications in various devices, however, few of the review articles connect the intrinsic properties of graphene with its energy. The IUPAC definition of graphene refers to a single carbon layer of graphite structure and its related superlative properties. A lot of scientific results on graphene published to date are actually dealing with multi-layer graphenes or reduced graphenes from insulating graphene oxides (GO) which contain defects and contaminants from the reactions and do not possess some of the intrinsic physical properties of pristine graphene. In this review, the focus is on the most recent advances in the study of pure graphene properties and novel energy solutions based on these properties. It also includes graphene metrology and analysis of both intellectual property and the value chain for the existing and forthcoming graphene industry that may cause a new 'industry revolution' with the strong and determined support of governments and industries across the European Union, U. S., Asia and many other countries in the world.

Magneto-optical fingerprints of distinct graphene multilayers using the giant infrared Kerr effect

The remarkable electronic properties of graphene strongly depend on the thickness and geometry of graphene stacks. This wide range of electronic tunability is of fundamental interest and has many applications in newly proposed devices. Using the mid-infrared, magneto-optical Kerr effect, we detect and identify over 18 interband cyclotron resonances (CR) that are associated with ABA and ABC stacked multilayers as well as monolayers that coexist in graphene that is epitaxially grown on 4H-SiC. Moreover, the magnetic field and photon energy dependence of these features enable us to explore the band structure, electron-hole band asymmetries, and mechanisms that activate a CR response in the Kerr effect for various multilayers that coexist in a single sample. Surprisingly, we find that the magnitude of monolayer Kerr effect CRs is not temperature dependent. This unexpected result reveals new questions about the underlying physics that makes such an effect possible.

Intrinsic line shape of the Raman 2D-mode in freestanding graphene monolayers

We report a comprehensive study of the two-phonon intervalley (2D) Raman mode in graphene monolayers, motivated by recent reports of asymmetric 2D-mode line shapes in freestanding graphene. For photon energies in the range 1.53-2.71 eV, the 2D-mode Raman response of freestanding samples appears as bimodal, in stark contrast with the Lorentzian approximation that is commonly used for supported monolayers. The transition between the freestanding and supported cases is mimicked by electrostatically doping freestanding graphene at carrier densities above 2 × 10(11) cm(-2). This result quantitatively demonstrates that low levels of charging can obscure the intrinsically bimodal 2D-mode line shape of monolayer graphene. In pristine freestanding graphene, we observe a broadening of the 2D-mode feature with decreasing photon energy that cannot be rationalized using a simple one-dimensional model based on resonant inner and outer processes. This indicates that phonon wavevectors away from the high-symmetry lines of the Brillouin zone must contribute to the 2D-mode, so that a full two-dimensional calculation is required to properly describe multiphonon-resonant Raman processes.

Cloning of Dirac fermions in graphene superlattices

Superlattices have attracted great interest because their use may make it possible to modify the spectra of two-dimensional electron systems and, ultimately, create materials with tailored electronic properties. In previous studies (see, for example, refs 1-8), it proved difficult to realize superlattices with short periodicities and weak disorder, and most of their observed features could be explained in terms of cyclotron orbits commensurate with the superlattice. Evidence for the formation of superlattice minibands (forming a fractal spectrum known as Hofstadter's butterfly) has been limited to the observation of new low-field oscillations and an internal structure within Landau levels. Here we report transport properties of graphene placed on a boron nitride substrate and accurately aligned along its crystallographic directions. The substrate's moiré potential acts as a superlattice and leads to profound changes in the graphene's electronic spectrum. Second-generation Dirac points appear as pronounced peaks in resistivity, accompanied by reversal of the Hall effect. The latter indicates that the effective sign of the charge carriers changes within graphene's conduction and valence bands. Strong magnetic fields lead to Zak-type cloning of the third generation of Dirac points, which are observed as numerous neutrality points in fields where a unit fraction of the flux quantum pierces the superlattice unit cell. Graphene superlattices such as this one provide a way of studying the rich physics expected in incommensurable quantum systems and illustrate the possibility of controllably modifying the electronic spectra of two-dimensional atomic crystals by varying their crystallographic alignment within van der Waals heterostuctures.

Evolution of Landau levels into edge states in graphene

Two-dimensional electron systems in the presence of a magnetic field support topologically ordered states, in which the coexistence of an insulating bulk with conducting one-dimensional chiral edge states gives rise to the quantum Hall effect. For systems confined by sharp boundaries, theory predicts a unique edge-bulk correspondence, which is central to proposals of quantum Hall-based topological qubits. However, in conventional semiconductor-based two-dimensional electron systems, these elegant concepts are difficult to realize, because edge-state reconstruction due to soft boundaries destroys the edge-bulk correspondence. Here we use scanning tunnelling microscopy and spectroscopy to follow the spatial evolution of electronic (Landau) levels towards an edge of graphene supported above a graphite substrate. We observe no edge-state reconstruction, in agreement with calculations based on an atomically sharp boundary. Our results single out graphene as a system where the edge structure can be controlled and the edge-bulk correspondence is preserved.

Splitting of the zero-energy Landau level and universal dissipative conductivity at critical points in disordered graphene

We report on robust features of the longitudinal conductivity (σ(xx)) of the graphene zero-energy Landau level in the presence of disorder and varying magnetic fields. By mixing an Anderson disorder potential with a low density of sublattice impurities, the transition from metallic to insulating states is theoretically explored as a function of Landau-level splitting, using highly efficient real-space methods to compute the Kubo conductivities (both σ(xx) and Hall σ(xy)). As long as valley degeneracy is maintained, the obtained critical conductivity σ(xx) =/~ 1.4e(2)/h is robust upon an increase in disorder (by almost 1 order of magnitude) and magnetic fields ranging from about 2 to 200 T. When the sublattice symmetry is broken, σ(xx) eventually vanishes at the Dirac point owing to localization effects, whereas the critical conductivities of pseudospin-split states (dictating the width of a σ(xy) = 0 plateau) change to σ(xx) =/~ e(2)/h, regardless of the splitting strength, superimposed disorder, or magnetic strength. These findings point towards the nondissipative nature of the quantum Hall effect in disordered graphene in the presence of Landau level splitting.

Substrate-induced symmetry breaking in silicene

We demonstrate that silicene, a 2D honeycomb lattice consisting of Si atoms, loses its Dirac fermion characteristics due to substrate-induced symmetry breaking when synthesized on the Ag(111) surface. No Landau level sequences appear in the tunneling spectra under a magnetic field, and density functional theory calculations show that the band structure is drastically modified by the hybridization between the Si and Ag atoms. This is the first direct example demonstrating the lack of Dirac fermions in a single layer honeycomb lattice due to significant symmetry breaking.

Observation of Landau levels in potassium-intercalated graphite under a zero magnetic field

The charge carriers in graphene are massless Dirac fermions and exhibit a relativistic Landau-level quantization in a magnetic field. Recently, it has been reported that, without any external magnetic field, quantized energy levels have been also observed from strained graphene nanobubbles on a platinum surface, which were attributed to the Landau levels of massless Dirac fermions in graphene formed by a strain-induced pseudomagnetic field. Here we show the generation of the Landau levels of massless Dirac fermions on a partially potassium-intercalated graphite surface without applying external magnetic field. Landau levels of massless Dirac fermions indicate the graphene character in partially potassium-intercalated graphite. The generation of the Landau levels is ascribed to a vector potential induced by the perturbation of nearest-neighbour hopping, which may originate from a strain or a gradient of on-site potentials at the perimeters of potassium-free domains.

A signature of the Dirac-like physics of charge carriers in graphene is the occurrence of an anomalous Hall effect, resulting in a quantization of the Landau levels. Guo et al. observe Landau levels of Dirac fermions in potassium-intercalated graphite arising in the absence of an applied magnetic field.

Specific features of electric charge screening in few-layer graphene films

We present a nonlinear Thomas-Fermi theory which describes the electric charge screening in a system including two charged substrate layers separated by a few-layered graphene film. We show that by increasing the charge at the interfaces, the system can be turned from the weak screening regime where the whole film responds to the external charge to the strong screening regime where the external charge is screened by a surface charge distribution confined to the bounding graphene layers. The transition from weak to strong screening is shown to turn on relatively quickly, and it occurs when the applied external charge/external field reaches a certain crossover magnitude. The possibilities for experimental observation of the predicted crossover are discussed.

Electron-phonon bound states in graphene in a perpendicular magnetic field

The spectrum of electron-phonon complexes in monolayer graphene is investigated in the presence of a perpendicular quantizing magnetic field. Despite the small electron-phonon coupling, usual perturbation theory is inapplicable for the calculation of the scattering amplitude near the threshold of optical phonon emission. Our findings, beyond perturbation theory, show that the true spectrum near the phonon-emission threshold is completely governed by new branches, corresponding to bound states of an electron and an optical phonon with a binding energy of the order of αω(0), where α is the electron-phonon coupling and ω(0) the phonon energy.

Probing local hydrogen impurities in quasi-free-standing graphene

We report high-resolution scanning tunneling microscopy and spectroscopy of hydrogenated, quasi-free-standing graphene. For this material, theory has predicted the appearance of a midgap state at the Fermi level, and first angle-resolved photoemission spectroscopy (ARPES) studies have provided evidence for the existence of this state in the long-range electronic structure. However, the spatial extension of H defects, their preferential adsorption patterns on graphene, or local electronic structure are experimentally still largely unexplored. Here, we investigate the shapes and local electronic structure of H impurities that go with the aforementioned midgap state observed in ARPES. Our measurements of the local density of states at hydrogenated patches of graphene reveal a hydrogen impurity state near the Fermi level whose shape depends on the tip position with respect to the center of a patch. In the low H concentration regime, we further observe predominantly single hydrogenation sites as well as extended multiple C-H sites in parallel orientation to the lattice vectors, indicating an adsorption at the same graphene sublattice. This is corroborated by ARPES measurements showing the formation of a dispersionless hydrogen impurity state which is extended over the whole Brillouin zone.

Valley filtering in gapped graphene modulated by an antisymmetric magnetic field and an electric barrier

We investigate valley-dependent electron transport properties of a gapped graphene film modulated by a ferromagnetic metal (FM) stripe with magnetization along the current direction. The antisymmetric stray field of the FM stripe alone does not generate a valley-polarized current due to an intrinsic symmetry. The inclusion of an electric barrier breaks this symmetry. It is shown that highly valley-polarized electron transport can be achieved in this magnetic-electric barrier structure, which results from a valley-dependent phase mechanism. The valley polarization can be tuned by the barrier parameters.

Renormalization of the graphene dispersion velocity determined from scanning tunneling spectroscopy

In graphene, as in most metals, electron-electron interactions renormalize the properties of electrons but leave them behaving like noninteracting quasiparticles. Many measurements probe the renormalized properties of electrons right at the Fermi energy. Uniquely for graphene, the accessibility of the electrons at the surface offers the opportunity to use scanned probe techniques to examine the effect of interactions at energies away from the Fermi energy, over a broad range of densities, and on a local scale. Using scanning tunneling spectroscopy, we show that electron interactions leave the graphene energy dispersion linear as a function of excitation energy for energies within ±200  meV of the Fermi energy. However, the measured dispersion velocity depends on density and increases strongly as the density approaches zero near the charge neutrality point, revealing a squeezing of the Dirac cone due to interactions.

Electronic transport in two stacked graphene monolayers

We report on interlayer and lateral electronic transport measurements in two stacked graphene monolayers which have separate electrical contacts. The current-voltage characteristic across the two layers shows linear Ohmic behavior at zero magnetic field. At high magnetic fields, sequences of quantum Hall plateaus of the overlap region with filling factors 4, 8, and 12 are observed which can be explained by equilibration of the edge channel potentials of the individual graphene layers. An anomaly is observed at total filling factors ±2 in the overlap region. The I-V characteristic for interlayer transport turns nonlinear, and the Hall signal vanishes, indicating a magnetic field induced electrical decoupling of the two graphene layers.