Enhanced absorption and carrier collection in Si wire arrays for photovoltaic applications

Mapping carrier diffusion in single silicon core-shell nanowires with ultrafast optical microscopy

Recent success in the fabrication of axial and radial core-shell heterostructures, composed of one or more layers with different properties, on semiconductor nanowires (NWs) has enabled greater control of NW-based device operation for various applications. (1-3) However, further progress toward significant performance enhancements in a given application is hindered by the limited knowledge of carrier dynamics in these structures. In particular, the strong influence of interfaces between different layers in NWs on transport makes it especially important to understand carrier dynamics in these quasi-one-dimensional systems. Here, we use ultrafast optical microscopy (4) to directly examine carrier relaxation and diffusion in single silicon core-only and Si/SiO(2) core-shell NWs with high temporal and spatial resolution in a noncontact manner. This enables us to reveal strong coherent phonon oscillations and experimentally map electron and hole diffusion currents in individual semiconductor NWs for the first time.

Magnetic field alignment of randomly oriented, high aspect ratio silicon microwires into vertically oriented arrays

External magnetic fields have been used to vertically align ensembles of silicon microwires coated with ferromagnetic nickel films. X-ray diffraction and image analysis techniques were used to quantify the degree of vertical orientation of the microwires. The degree of vertical alignment and the minimum field strength required for alignment were evaluated as a function of the wire length, coating thickness, magnetic history, and substrate surface properties. Nearly 100% of 100 μm long, 2 μm diameter, Si microwires that had been coated with 300 nm of Ni could be vertically aligned by a 300 G magnetic field. For wires ranging from 40 to 60 μm in length, as the length of the wire increased, a higher degree of alignment was observed at lower field strengths, consistent with an increase in the available magnetic torque. Microwires that had been exposed to a magnetic sweep up to 300 G remained magnetized and, therefore, aligned more readily during subsequent magnetic field alignment sweeps. Alignment of the Ni-coated Si microwires occurred at lower field strengths on hydrophilic Si substrates than on hydrophobic Si substrates. The magnetic field alignment approach provides a pathway for the directed assembly of solution-grown semiconductor wires into vertical arrays, with potential applications in solar cells as well as in other electronic devices that utilize nano- and microscale components as active elements.

Nanowire heating by optical electromagnetic irradiation

The dissipative absorption of electromagnetic energy by 1D nanoscale structures at optical frequencies is applicable to several important phenomena, including biomedical photothermal theranostics, nanoscale photovoltaic materials, atmospheric aerosols, and integrated photonic devices. Closed-form analytical calculations are presented for the temperature rise within infinite circular cylinders with nanometer-scale diameters (nanowires) that are irradiated at right angles by a continuous-wave laser source polarized along the nanowire's axis. Solutions for the heat source are compared to both numerical finite-difference time domain (FDTD) simulations and well-known Mie scattering cross sections for infinite cylinders. The analysis predicts that the maximum temperature increase is affected not only by the cylinder's composition and porosity but also by morphology-dependent resonances (MDRs) that lead to significant spikes in the local temperature at particular diameters. Furthermore, silicon nanowires with high thermal conductivities are observed to exhibit extremely uniform internal temperatures during electromagnetic heating to 1 part in 10(6), including cases where there are substantial fluctuations of the internal electric-field source term that generates the Joule heating. For a highly absorbing material such as carbon, much higher temperatures are predicted, the internal temperature distribution is nonuniform, and MDRs are not encountered.

Dynamic nanoparticle assemblies

Although nanoparticle (NP) assemblies are at the beginning of their development, their unique geometrical shapes and media-responsive optical, electronic, and magnetic properties have attracted significant interest. Nanoscale assembly bridges multiple levels of hierarchy of materials: individual nanoparticles, discrete molecule-like or virus-like nanoscale agglomerates, microscale devices, and macroscale materials. The capacity to self-assemble can greatly facilitate the integration of nanotechnology with other technologies and, in particular, with microscale fabrication. In this Account, we describe developments in the emerging field of dynamic NP assemblies, which are spontaneously form superstructures containing more than two inorganic nanoscale particles that display the ability to change their geometrical, physical, chemical, and other attributes. In many ways, dynamic assemblies can represent a bottleneck in the "bottom-up" fabrication of NP-based devices because they can produce a much greater variety of assemblies, but they also provide a convenient tool for variation of geometries and dimensions of nanoparticle assemblies. Superstructures of NPs (and those held together by similar intrinsic forces)are classified into two groups: Class 1 where media and external fields can alter shape, conformation, and order of stable super structures with a nearly constant number of NPs or Class 2 where the total number of NPs changes, while the organizational motif in the final superstructure remains the same. The future development of successful dynamic assemblies requires understanding the equilibrium in dynamic NP systems. The dynamic nature of Class 1 assemblies is associated with the equilibrium between different conformations of a superstructure and is comparable to the isomerization in classical chemistry. Class 2 assemblies involve the formation or breakage of linkages between the NPs, which is analogous to the classical chemical equilibrium for the formation of a molecule from atoms. Finer classification of NP assemblies in accord with established conventions in the field may include different size dimensionalities: discrete assemblies (artificial molecules) and one-dimensional (spaced chains), two-dimensional (sheets), and three-dimensional (superlattices, twisted structures) assemblies. Notably, these dimensional attributes must be regarded as primarily topological in nature because all of these superstructures can acquire complex three-dimensional shapes. We discuss three primary strategies used to prepare NP superstructures: (1) anisotropy-based assemblies utilizing either intrinsic force field anisotropy around NPs or external anisotropy associated with templates or applied fields, (2) assembly methods utilizing uniform NPs with isotropic interactions, and (3) methods based on mutual recognition of biomolecules, such as DNA and antigen-antibody interactions. We consider optical, electronic, and magnetic properties of dynamic superstructures, focusing primarily on multiparticle effects in NP superstructures as represented by surface plasmon resonance, NP-NP charge transport, and multibody magnetization. Unique properties of NP superstructures are being applied to biosensing, drug delivery, and nanoelectronics. For both Class 1 and Class 2 dynamic assemblies, biosensing is the most dominant and well-developed area of dynamic nanostructures being successfully transitioned into practice. We can foresee the rapid development of dynamic NP assemblies toward applications in harvesting of dissipated energy, photonics, and electronics. The final part of this Account is devoted to the fundamental questions facing dynamic assemblies of NPs in the future.

An 18.2%-efficient black-silicon solar cell achieved through control of carrier recombination in nanostructures

Silicon nanowire and nanopore arrays promise to reduce manufacturing costs and increase the power conversion efficiency of photovoltaic devices. So far, however, photovoltaic cells based on nanostructured silicon exhibit lower power conversion efficiencies than conventional cells due to the enhanced photocarrier recombination associated with the nanostructures. Here, we identify and separately measure surface recombination and Auger recombination in wafer-based nanostructured silicon solar cells. By identifying the regimes of junction doping concentration in which each mechanism dominates, we were able to design and fabricate an independently confirmed 18.2%-efficient nanostructured 'black-silicon' cell that does not need the antireflection coating layer(s) normally required to reach a comparable performance level. Our results suggest design rules for efficient high-surface-area solar cells with nano- and microstructured semiconductor absorbers.

Carrier dynamics in Si nanowires fabricated by metal-assisted chemical etching

Silicon nanowire arrays fabricated by metal-assisted wet chemical etching have emerged as a promising architecture for solar energy harvesting applications. Here we investigate the dynamics and transport properties of photoexcited carriers in nanowires derived from an intrinsic silicon wafer using the terahertz (THz) time-domain spectroscopy. Both the dynamics and the pump fluence dependence of the photoinduced complex conductivity spectra up to several THz were measured. The photoinduced conductivity spectra follow a Lorentz dependence, arising from surface plasmon resonances in nanowires. The carrier lifetime was observed to approach 0.7 ns, which is limited primarily by surface trapping. The intrinsic carrier mobility was found to be ~1000 cm(2)/(V · s). Compared to other silicon nanostructures, these relative high values observed for both the carrier lifetime and mobility are the consequences of high crystallinity and surface quality of the nanowires fabricated by the metal-assisted wet chemical etching method.

Tuning light absorption in core/shell silicon nanowire photovoltaic devices through morphological design

Subwavelength diameter semiconductor nanowires can support optical resonances with anomalously large absorption cross sections, and thus tailoring these resonances to specific frequencies could enable a number of nanophotonic applications. Here, we report the design and synthesis of core/shell p-type/intrinsic/n-type (p/i/n) Si nanowires (NWs) with different sizes and cross-sectional morphologies as well as measurement and simulation of photocurrent spectra from single-NW devices fabricated from these NW building blocks. Approximately hexagonal cross-section p/i/n coaxial NWs of various diameters (170-380 nm) were controllably synthesized by changing the Au catalyst diameter, which determines core diameter, as well as shell deposition time, which determines shell thickness. Measured polarization-resolved photocurrent spectra exhibit well-defined diameter-dependent peaks. The corresponding external quantum efficiency (EQE) spectra calculated from these data show good quantitative agreement with finite-difference time-domain (FDTD) simulations and allow assignment of the observed peaks to Fabry-Perot, whispering-gallery, and complex high-order resonant absorption modes. This comparison revealed a systematic red-shift of equivalent modes as a function of increasing NW diameter and a progressive increase in the number of resonances. In addition, tuning shell synthetic conditions to enable enhanced growth on select facets yielded NWs with approximately rectangular cross sections; analysis of transmission electron microscopy and scanning electron microscopy images demonstrate that growth of the n-type shell at 860 °C in the presence of phosphine leads to enhanced relative Si growth rates on the four {113} facets. Notably, polarization-resolved photocurrent spectra demonstrate that at longer wavelengths the rectangular cross-section NWs have narrow and significantly larger amplitude peaks with respect to similar size hexagonal NWs. A rectangular NW with a diameter of 260 nm yields a dominant mode centered at 570 nm with near-unity EQE in the transverse-electric polarized spectrum. Quantitative comparisons with FDTD simulations demonstrate that these new peaks arise from cavity modes with high symmetry that conform to the cross-sectional morphology of the rectangular NW, resulting in low optical loss of the mode. The ability to modulate absorption with changes in nanoscale morphology by controlled synthesis represents a promising route for developing new photovoltaic and optoelectronic devices.

Vertically aligned GaAs nanowires on graphite and few-layer graphene: generic model and epitaxial growth

By utilizing the reduced contact area of nanowires, we show that epitaxial growth of a broad range of semiconductors on graphene can in principle be achieved. A generic atomic model is presented which describes the epitaxial growth configurations applicable to all conventional semiconductor materials. The model is experimentally verified by demonstrating the growth of vertically aligned GaAs nanowires on graphite and few-layer graphene by the self-catalyzed vapor-liquid-solid technique using molecular beam epitaxy. A two-temperature growth strategy was used to increase the nanowire density. Due to the self-catalyzed growth technique used, the nanowires were found to have a regular hexagonal cross-sectional shape, and are uniform in length and diameter. Electron microscopy studies reveal an epitaxial relationship of the grown nanowires with the underlying graphitic substrates. Two relative orientations of the nanowire side-facets were observed, which is well explained by the proposed atomic model. A prototype of a single GaAs nanowire photodetector demonstrates a high-quality material. With GaAs being a model system, as well as a very useful material for various optoelectronic applications, we anticipate this particular GaAs nanowire/graphene hybrid to be promising for flexible and low-cost solar cells.

Evaluation and optimization of mass transport of redox species in silicon microwire-array photoelectrodes

Physical integration of a Ag electrical contact internally into a metal/substrate/microstructured Si wire array/oxide/Ag/electrolyte photoelectrochemical solar cell has produced structures that display relatively low ohmic resistance losses, as well as highly efficient mass transport of redox species in the absence of forced convection. Even with front-side illumination, such wire-array based photoelectrochemical solar cells do not require a transparent conducting oxide top contact. In contact with a test electrolyte that contained 50 mM/5.0 mM of the cobaltocenium(+/0) redox species in CH(3)CN-1.0 M LiClO(4), when the counterelectrode was placed in the solution and separated from the photoelectrode, mass transport restrictions of redox species in the internal volume of the Si wire array photoelectrode produced low fill factors and limited the obtainable current densities to 17.6 mA cm(-2) even under high illumination. In contrast, when the physically integrated internal Ag film served as the counter electrode, the redox couple species were regenerated inside the internal volume of the photoelectrode, especially in regions where depletion of the redox species due to mass transport limitations would have otherwise occurred. This behavior allowed the integrated assembly to operate as a two-terminal, stand-alone, photoelectrochemical solar cell. The current density vs. voltage behavior of the integrated photoelectrochemical solar cell produced short-circuit current densities in excess of 80 mA cm(-2) at high light intensities, and resulted in relatively low losses due to concentration overpotentials at 1 Sun illumination. The integrated wire array-based device architecture also provides design guidance for tandem photoelectrochemical cells for solar-driven water splitting.

Nanowire arrays in multicrystalline silicon thin films on glass: a promising material for research and applications in nanotechnology

Silicon nanowires (SiNW) were formed on large grained, electron-beam crystallized silicon (Si) thin films of only ∼6 μm thickness on glass using nanosphere lithography (NSL) in combination with reactive ion etching (RIE). Electron backscatter diffraction (EBSD) and transmission electron microscopy (TEM) studies revealed outstanding structural properties of this nanomaterial. It could be shown that SiNWs with entirely predetermined shapes including lengths, diameters and spacings and straight side walls form independently of their crystalline orientation and arrange in ordered arrays on glass. Furthermore, for the first time grain boundaries could be observed in individual, straightly etched SiNWs. After heat treatment an electronic grade surface quality of the SiNWs could be shown by X-ray photoelectron spectroscopy (XPS). Integrating sphere measurements show that SiNW patterning of the multicrystalline Si (mc-Si) starting thin film on glass substantially increases absorption and reduces reflection, as being desired for an application in thin film photovoltaics (PV). The multicrystalline SiNWs directly mark a starting point for research not only in PV but also in other areas like nanoelectronics, surface functionalization, and nanomechanics.

Efficient photon capturing with ordered three-dimensional nanowell arrays

Unique light-matter interaction at nanophotonic regime can be harnessed for designing efficient photonic and optoelectronic devices such as solar cells, lasers, and photodetectors. In this work, periodic photon nanowells are fabricated with a low-cost and scalable approach, followed by systematic investigations of their photon capturing properties combining experiments and simulations. Intriguingly, it is found that a proper periodicity greatly facilitates photon capturing process in the nanowells, primarily owing to optical diffraction. Meanwhile, the nanoengineered morphology renders the nanostructures with a broad-band efficient light absorption. The findings in this work can be utilized to implement a new type of nanostructure-based solar cells. Also, the methodology applied in this work can be generalized to rational design of other types of efficient photon-harvesting devices.

Assessing charge carrier trapping in silicon nanowires using picosecond conductivity measurements

Free-standing semiconductor nanowires on bulk substrates are increasingly being explored as building blocks for novel optoelectronic devices such as tandem solar cells. Although carrier transport properties, such as mobility and trap densities, are essential for such applications, it has remained challenging to quantify these properties. Here, we report on a method that permits the direct, contact-free quantification of nanowire carrier diffusivity and trap densities in thin (∼25 nm wide) silicon nanowires-without any additional processing steps such as transfer of wires onto a substrate. The approach relies on the very different terahertz (THz) conductivity response of photoinjected carriers within the silicon nanowires from those in the silicon substrate. This allows quantifying both the picosecond dynamics and the efficiency of charge carrier transport from the silicon nanowires into the silicon substrate. Varying the excitation density allows for quantification of nanowire trap densities: for sufficiently low excitation fluences the diffusion process stalls because the majority of charge carriers become trapped at nanowire surface defects. Using a model that includes these effects, we determine both the diffusion constant and the nanowire trap density. The trap density is found to be orders of magnitude larger than the charge carrier density that would be generated by AM1.5 sunlight.

Dielectric core-shell optical antennas for strong solar absorption enhancement

We demonstrate a new light trapping technique that exploits dielectric core-shell optical antennas to strongly enhance solar absorption. This approach can allow the thickness of active materials in solar cells lowered by almost 1 order of magnitude without scarifying solar absorption capability. For example, it can enable a 70 nm thick hydrogenated amorphous silicon (a-Si:H) thin film to absorb 90% of incident solar radiation above the bandgap, which would otherwise require a thickness of 400 nm in typical antireflective coated thin films. This strong enhancement arises from a controlled optical antenna effect in patterned core-shell nanostructures that consist of absorbing semiconductors and nonabsorbing dielectric materials. This core-shell optical antenna benefits from a multiplication of enhancements contributed by leaky mode resonances (LMRs) in the semiconductor part and antireflection effects in the dielectric part. We investigate the fundamental mechanism for this enhancement multiplication and demonstrate that the size ratio of the semiconductor and the dielectric parts in the core-shell structure is key for optimizing the enhancement. By enabling strong solar absorption enhancement, this approach holds promise for cost reduction and efficiency improvement of solar conversion devices, including solar cells and solar-to-fuel systems. It can generally apply to a wide range of inorganic and organic active materials. This dielectric core-shell antenna can also find applications in other photonic devices such as photodetectors, sensors, and solid-state lighting diodes.

Three-dimensional core-shell hybrid solar cells via controlled in situ materials engineering

Three-dimensional core-shell organic-inorganic hybrid solar cells with tunable properties are demonstrated via electropolymerization. Air-stable poly(3,4-ethylenedioxythiophene) (PEDOT) shells with controlled thicknesses are rapidly coated onto periodic GaAs nanopillar arrays conformally, preserving the vertical 3D structure. The properties of the organic layer can be readily tuned in situ, allowing for (1) the lowering of the highest occupied molecular orbital level (|ΔE| ∼ 0.28 eV), leading to the increase of open-circuit voltage (V(OC)), and (2) an improvement in PEDOT conductivity that results in enhanced short-circuit current densities (J(SC)). The incorporation of various anionic dopants in the polymer during the coating process also enables the tailoring of the polymer/semiconductor interface transport properties. Systematic tuning of the device properties results in a J(SC) of 13.6 mA cm(-2), V(OC) of 0.63 V, peak external quantum efficiency of 58.5%, leading to a power conversion efficiencies of 4.11%.

On-surface formation of metal nanowire transparent top electrodes on CdSe nanowire array-based photoconductive devices

A simple wet chemical approach was developed for a unique on-surface synthesis of transparent conductive films consisting of ultrathin gold/silver nanowires directly grown on top of CdSe nanowire array photoconductive devices enclosed in polycarbonate membranes. The metal nanowire film formed an ohmic contact to the semiconductor nanowires without additional treatment. The sheet resistance and transparency of the metal nanowire arrays could be controlled by the number of metal nanowire layers deposited, ranging from ∼98-99% transmission through the visible range and several kOhm/sq sheet resistance for a single layer, to 80-85% transmission and ∼100 Ohm/sq sheet resistance for 4 layers.

Hybrid silicon nanocone-polymer solar cells

Recently, hybrid Si/organic solar cells have been studied for low-cost Si photovoltaic devices because the Schottky junction between the Si and organic material can be formed by solution processes at a low temperature. In this study, we demonstrate a hybrid solar cell composed of Si nanocones and conductive polymer. The optimal nanocone structure with an aspect ratio (height/diameter of a nanocone) less than two allowed for conformal polymer surface coverage via spin-coating while also providing both excellent antireflection and light trapping properties. The uniform heterojunction over the nanocones with enhanced light absorption resulted in a power conversion efficiency above 11%. Based on our simulation study, the optimal nanocone structures for a 10 μm thick Si solar cell can achieve a short-circuit current density, up to 39.1 mA/cm(2), which is very close to the theoretical limit. With very thin material and inexpensive processing, hybrid Si nanocone/polymer solar cells are promising as an economically viable alternative energy solution.

Fabrication of flexible and vertical silicon nanowire electronics

Vertical silicon nanowire (SiNW) array devices directly connected on both sides to metallic contacts were fabricated on various non-Si-based substrates (e.g., glass, plastics, and metal foils) in order to fully exploit the nanomaterial properties for final applications. The devices were realized with uniform length Ag-assisted electroless etched SiNW arrays that were detached from their fabrication substrate, typically Si wafers, reattached to arbitrary substrates, and formed with metallic contacts on both sides of the NW array. Electrical characterization of the SiNW array devices exhibits good current-voltage characteristics consistent with the SiNW morphology.

In situ nanomechanical measurements of interfacial strength in membrane-embedded chemically functionalized Si microwires for flexible solar cells

Arrays of vertically aligned Si microwires embedded in polydimethylsiloxane (PDMS) have emerged as a promising candidate for use in solar energy conversion devices. Such structures are lightweight and concurrently demonstrate competitive efficiency and mechanical flexibility. To ensure reliable functioning under bending and flexing, strong interfacial adhesion between the nanowire and the matrix is needed. In situ uniaxial tensile tests of individual, chemically functionalized, Si microwires embedded in a compliant PDMS matrix reveal that chemical functionality on Si microwire surfaces is directly correlated with interfacial adhesion strength. Chemical functionalization can therefore serve as an effective methodology for accessing a wide range of interfacial adhesion between the rigid constituents and the soft polymer matrix; the adhesion can be quantified by measuring the mechanical strength of such systems.

Efficient light trapping in inverted nanopyramid thin crystalline silicon membranes for solar cell applications

Thin-film crystalline silicon (c-Si) solar cells with light-trapping structures can enhance light absorption within the semiconductor absorber layer and reduce material usage. Here we demonstrate that an inverted nanopyramid light-trapping scheme for c-Si thin films, fabricated at wafer scale via a low-cost wet etching process, significantly enhances absorption within the c-Si layer. A broadband enhancement in absorptance that approaches the Yablonovitch limit (Yablonovitch, E. J. Opt. Soc. Am.1987, 72, 899-907 ) is achieved with minimal angle dependence. We also show that c-Si films less than 10 μm in thickness can achieve absorptance values comparable to that of planar c-Si wafers thicker than 300 μm, amounting to an over 30-fold reduction in material usage. Furthermore the surface area increases by a factor of only 1.7, which limits surface recombination losses in comparison with other nanostructured light-trapping schemes. These structures will not only significantly curtail both the material and processing cost of solar cells but also allow the high efficiency required to enable viable c-Si thin-film solar cells in the future.

Magnetically guided nano-micro shaping and slicing of silicon

Silicon is one of the most important materials for modern electronics, telecom, and photovoltaic (PV) solar cells. With the rapidly expanding use of Si in the global economy, it would be highly desirable to reduce the overall use of Si material, especially to make the PVs more affordable and widely used as a renewable energy source. Here we report the first successful direction-guided, nano/microshaping of silicon, the intended direction of which is dictated by an applied magnetic field. Micrometer thin, massively parallel silicon sheets, very tall Si microneedles, zigzag bent Si nanowires, and tunnel drilling into Si substrates have all been demonstrated. The technique, utilizing narrow array of Au/Fe/Au trilayer etch lines, is particularly effective in producing only micrometer-thick Si sheets by rapid and inexpensive means with only 5 μm level slicing loss of Si material, thus practically eliminating the waste (and also the use) of Si material compared to the ~200 μm kerf loss per slicing and ~200 μm thick wafer in the typical saw-cut Si solar cell preparation. We expect that such nano/microshaping will enable a whole new family of novel Si geometries and exciting applications, including flexible Si circuits and highly antireflective zigzag nanowire coatings.

Highly efficient charge separation and collection across in situ doped axial VLS-grown Si nanowire p-n junctions

VLS-grown semiconductor nanowires have emerged as a viable prospect for future solar-based energy applications. In this paper, we report highly efficient charge separation and collection across in situ doped Si p-n junction nanowires with a diameter <100 nm grown in a cold wall CVD reactor. Our photoexcitation measurements indicate an internal quantum efficiency of ~50%, whereas scanning photocurrent microscopy measurements reveal effective minority carrier diffusion lengths of ~1.0 μm for electrons and 0.66 μm for holes for as-grown Si nanowires (d(NW) ≈ 65-80 nm), which are an order of magnitude larger than those previously reported for nanowires of similar diameter. Further analysis reveals that the strong suppression of surface recombination is mainly responsible for these relatively long diffusion lengths, with surface recombination velocities (S) calculated to be 2 orders of magnitude lower than found previously for as-grown nanowires, all of which used hot wall reactors. The degree of surface passivation achieved in our as-grown nanowires is comparable to or better than that achieved for nanowires in prior studies at significantly larger diameters. We suggest that the dramatically improved surface recombination velocities may result from the reduced sidewall reactions and deposition in our cold wall CVD reactor.

Light trapping in solar cells: can periodic beat random?

Theory predicts that periodic photonic nanostructures should outperform their random counterparts in trapping light in solar cells. However, the current certified world-record conversion efficiency for amorphous silicon thin-film solar cells, which strongly rely on light trapping, was achieved on the random pyramidal morphology of transparent zinc oxide electrodes. Based on insights from waveguide theory, we develop tailored periodic arrays of nanocavities on glass fabricated by nanosphere lithography, which enable a cell with a remarkable short-circuit current density of 17.1 mA/cm(2) and a high initial efficiency of 10.9%. A direct comparison with a cell deposited on the random pyramidal morphology of state-of-the-art zinc oxide electrodes, replicated onto glass using nanoimprint lithography, demonstrates unambiguously that periodic structures rival random textures.

Multiscale transparent electrode architecture for efficient light management and carrier collection in solar cells

The challenge for all photovoltaic technologies is to maximize light absorption, to convert photons with minimal losses into electric charges, and to efficiently extract them to the electrical circuit. For thin-film solar cells, all these tasks rely heavily on the transparent front electrode. Here we present a multiscale electrode architecture that allows us to achieve efficiencies as high as 14.1% with a thin-film silicon tandem solar cell employing only 3 μm of silicon. Our approach combines the versatility of nanoimprint lithography, the unusually high carrier mobility of hydrogenated indium oxide (over 100 cm(2)/V/s), and the unequaled light-scattering properties of self-textured zinc oxide. A multiscale texture provides light trapping over a broad wavelength range while ensuring an optimum morphology for the growth of high-quality silicon layers. A conductive bilayer stack guarantees carrier extraction while minimizing parasitic absorption losses. The tunability accessible through such multiscale electrode architecture offers unprecedented possibilities to address the trade-off between cell optical and electrical performance.

Bright single-photon sources in bottom-up tailored nanowires

The ability to achieve near-unity light-extraction efficiency is necessary for a truly deterministic single-photon source. The most promising method to reach such high efficiencies is based on embedding single-photon emitters in tapered photonic waveguides defined by top-down etching techniques. However, light-extraction efficiencies in current top-down approaches are limited by fabrication imperfections and etching-induced defects. The efficiency is further tempered by randomly positioned off-axis quantum emitters. Here we present perfectly positioned single quantum dots on the axis of a tailored nanowire waveguide using bottom-up growth. In comparison to quantum dots in nanowires without waveguides, we demonstrate a 24-fold enhancement in the single-photon flux, corresponding to a light-extraction efficiency of 42%. Such high efficiencies in one-dimensional nanowires are promising to transfer quantum information over large distances between remote stationary qubits using flying qubits within the same nanowire p–n junction.

Single-photon sources are important for quantum optical technologies, although achieving efficient light extraction from them with waveguides is limited in top-down approaches. Reimer et al. show a high extraction efficiency using a bottom-up method to grow quantum dots on the axis of nanowire waveguides.

Si nanowires organic semiconductor hybrid heterojunction solar cells toward 10% efficiency

High-efficiency hybrid solar cells are fabricated using a simple approach of spin coating a transparent hole transporting organic small molecule, 2,2',7,7'-Tetrakis-(N,N-di-4-methoxyphenylamino)-9,9'-spirobifluorene (Spiro-OMeTAD) on silicon nanowires (SiNWs) arrays prepared by electroless chemical etching. The characteristics of the hybrid cells are investigated as a function of SiNWs length from 0.15 to 5 μm. A maximum average power conversion efficiency of 9.92% has been achieved from 0.35 μm length SiNWs cells, despite a 12% shadowing loss and the absence of antireflective coating and back surface field enhancement. It is found that enhanced aggregations in longer SiNWs limit the cell performance due to increased series resistance and higher carrier recombination in the shorter wavelength region. The effects of the Si substrate doping concentrations on the performance of the cells are also investigated. Cells with higher substrate doping concentration exhibit a significant drop in the incident photons-to-current conversion efficiency (IPCE) in the near infrared region. Nevertheless, a promising short circuit current density of 19 mA/cm(2) and IPCE peak of 57% have been achieved for a 0.9 μm length SiNWs cell fabricated on a highly doped substrate with a minority-carrier diffusion length of only 15 μm. The results suggest that such hybrid cells can potentially be realized using Si thin films instead of bulk substrates. This is promising towards realizing low-cost and high-efficiency SiNWs/organic hybrid solar cells.

Genomic design of strong direct-gap optical transition in Si/Ge core/multishell nanowires

Finding a Si-based material with strong optical activity at the band-edge remains a challenge despite decades of research. The interest lies in combining optical and electronic functions on the same wafer, while retaining the extraordinary know-how developed for Si. However, Si is an indirect-gap material. The conservation of crystal momentum mandates that optical activity at the band-edge includes a phonon, on top of an electron-hole pair, and hence photon absorption and emission remain fairly unlikely events requiring optically rather thick samples. A promising avenue to convert Si-based materials to a strong light-absorber/emitter is to combine the effects on the band-structure of both nanostructuring and alloying. The number of possible configurations, however, shows a combinatorial explosion. Furthermore, whereas it is possible to readily identify the configurations that are formally direct in the momentum space (due to band-folding) yet do not have a dipole-allowed transition at threshold, the problem becomes not just calculation of band structure but also calculation of absorption strength. Using a combination of a genetic algorithm and a semiempirical pseudopotential Hamiltonian for describing the electronic structures, we have explored hundreds of thousands of possible coaxial core/multishell Si/Ge nanowires with the orientation of [001], [110], and [111], discovering some "magic sequences" of core followed by specific Si/Ge multishells, which can offer both a direct bandgap and a strong oscillator strength. The search has revealed a few simple design principles: (i) the Ge core is superior to the Si core in producing strong bandgap transition; (ii) [001] and [110] orientations have direct bandgap, whereas the [111] orientation does not; (iii) multishell nanowires can allow for greater optical activity by as much as an order of magnitude over plain nanowires; (iv) the main motif of the winning configurations giving direct allowed transitions involves rather thin Si shell embedded within wide Ge shells. We discuss the physical origin of the enhanced optical activity, as well as the effect of possible experimental structural imperfections on optical activity in our candidate core/multishell nanowires.

Plasmon-enhanced photocatalytic activity of iron oxide on gold nanopillars

Photocatalytic water splitting represents a promising way to produce renewable hydrogen fuel from solar energy. Ultrathin semiconductor electrodes for water splitting are of particular interest because the optical absorption occurs in the region where photogenerated charge carriers can effectively contribute to the chemical reactions on the surface. It is therefore important to manipulate and concentrate the incident light so that more photons can be absorbed within the thin film. Here we show an enhanced photocurrent in a thin-film iron oxide photoanode coated on arrays of Au nanopillars. The enhancement can be attributed primarily to the increased optical absorption originating from both surface plasmon resonances and photonic-mode light trapping in the nanostructured topography. The resonances can be tuned to a desirable wavelength by varying the thickness of the iron oxide layer. A net enhancement as high as 50% was observed over the solar spectrum.

Three-dimensional a-Si:H solar cells on glass nanocone arrays patterned by self-assembled Sn nanospheres

We introduce a cost-effective method of forming size-tunable arrays of nanocones to act as a three-dimensional (3D) substrate for hydrogenated amorphous silicon (a-Si:H) solar cells. The method is based on self-assembled tin nanospheres with sizes in the range of 20 nm to 1.2 μm. By depositing these spheres on glass substrates and using them as an etch mask, we demonstrate the formation of glass nanopillars or nanocones, depending on process conditions. After deposition of 150 nm thick a-Si:H solar cell p-i-n stacks on the glass nanocones, we show an output efficiency of 7.6% with a record fill factor of ~69% for a nanopillar-based 3D solar cell. This represents up to 40% enhanced efficiency compared to planar solar cells and, to the best of our knowledge, is the first demonstration of nanostructured p-i-n a-Si:H solar cells on glass that is textured without optical lithography patterning methods.

Coaxial multishell nanowires with high-quality electronic interfaces and tunable optical cavities for ultrathin photovoltaics

Silicon nanowires (NWs) could enable low-cost and efficient photovoltaics, though their performance has been limited by nonideal electrical characteristics and an inability to tune absorption properties. We overcome these limitations through controlled synthesis of a series of polymorphic core/multishell NWs with highly crystalline, hexagonally-faceted shells, and well-defined coaxial (p/n) and p/intrinsic/n (p/i/n) diode junctions. Designed 200-300 nm diameter p/i/n NW diodes exhibit ultralow leakage currents of approximately 1 fA, and open-circuit voltages and fill-factors up to 0.5 V and 73%, respectively, under one-sun illumination. Single-NW wavelength-dependent photocurrent measurements reveal size-tunable optical resonances, external quantum efficiencies greater than unity, and current densities double those for silicon films of comparable thickness. In addition, finite-difference-time-domain simulations for the measured NW structures agree quantitatively with the photocurrent measurements, and demonstrate that the optical resonances are due to Fabry-Perot and whispering-gallery cavity modes supported in the high-quality faceted nanostructures. Synthetically optimized NW devices achieve current densities of 17 mA/cm(2) and power-conversion efficiencies of 6%. Horizontal integration of multiple NWs demonstrates linear scaling of the absolute photocurrent with number of NWs, as well as retention of the high open-circuit voltages and short-circuit current densities measured for single NW devices. Notably, assembly of 2 NW elements into vertical stacks yields short-circuit current densities of 25 mA/cm(2) with a backside reflector, and simulations further show that such stacking represents an attractive approach for further enhancing performance with projected efficiencies of > 15% for 1.2 μm thick 5 NW stacks.

Solar Cell light trapping beyond the ray optic limit

In 1982, Yablonovitch proposed a thermodynamic limit on light trapping within homogeneous semiconductor slabs, which implied a minimum thickness needed to fully absorb the solar spectrum. However, this limit is valid for geometrical optics but not for a new generation of subwavelength solar absorbers such as ultrathin or inhomogeneously structured cells, wire-based cells, photonic crystal-based cells, and plasmonic cells. Here we show that the key to exceeding the conventional ray optic or so-called ergodic light trapping limit is in designing an elevated local density of optical states (LDOS) for the absorber. Moreover, for any semiconductor we show that it is always possible to exceed the ray optic light trapping limit and use these principles to design a number of new solar absorbers with the key feature of having an elevated LDOS within the absorbing region of the device, opening new avenues for solar cell design and cost reduction.

Absorption of light in a single-nanowire silicon solar cell decorated with an octahedral silver nanocrystal

In recent photovoltaic research, nanomaterials have offered two new approaches for trapping light within solar cells to increase their absorption: nanostructuring the absorbing semiconductor and using metallic nanostructures to couple light into the absorbing layer. This work combines these two approaches by decorating a single-nanowire silicon solar cell with an octahedral silver nanocrystal. Wavelength-dependent photocurrent measurements and finite-difference time domain simulations show that increases in photocurrent arise at wavelengths corresponding to the nanocrystal's surface plasmon resonances, while decreases occur at wavelengths corresponding to optical resonances of the nanowire. Scanning photocurrent mapping with submicrometer spatial resolution experimentally confirms that changes in the device's photocurrent come from the silver nanocrystal. These results demonstrate that understanding the interactions between nanoscale absorbers and plasmonic nanostructures is essential to optimizing the efficiency of nanostructured solar cells.

PERSPECTIVE OF NANOMATERIALS IN SOLAR CELL

Reducing cost and increasing efficiency are the principal drivers in photovoltaic technology. Nanotechnology has shown particular promise since it can offer solution to both problems either by improving the existing technologies or helping to replace them with alternative solutions. Nanomaterials can contribute from different ways. The solar cell designs and enhancements play important role in their performance and categorized by the type of nanostructure utilized. This review paper focuses on different possible contribution of nanomaterials in solar cell and describes their promising role and their obstacles.

Strong light absorption of self-organized 3-D nanospike arrays for photovoltaic applications

Three-dimensional (3-D) nanostructures have been widely explored for efficient light trapping; however, many of the nanostructure fabrication processes reported have high cost and/or limited scalability. In this work, self-organized 3-D Al nanospike arrays were successfully fabricated on thin Al foils with controlled nanospike geometry such as height and pitch. Thereafter, photovoltaic materials of a-Si and CdTe thin films were conformally deposited on the nanospikes structures thus forming 3-D nanostructures with strong light absorption over a broad wavelength range and photon incident angle. Specifically, 100 nm-thick CdTe film on nanospikes showed 97% peak absorption, and up to 95% day-integrated sunlight absorption. These results indicate that self-organized 3-D Al nanospike arrays can serve as lightweight and low cost substrates for cost-effective thin film photovoltaics.

Hybrid heterojunction solar cell based on organic-inorganic silicon nanowire array architecture

Silicon nanowire arrays (SiNWs) on a planar silicon wafer can be fabricated by a simple metal-assisted wet chemical etching method. They can offer an excellent light harvesting capability through light scattering and trapping. In this work, we demonstrated that the organic-inorganic solar cell based on hybrid composites of conjugated molecules and SiNWs on a planar substrate yielded an excellent power conversion efficiency (PCE) of 9.70%. The high efficiency was ascribed to two aspects: one was the improvement of the light absorption by SiNWs structure on the planar components; the other was the enhancement of charge extraction efficiency, resulting from the novel top contact by forming a thin organic layer shell around the individual silicon nanowire. On the contrary, the sole planar junction solar cell only exhibited a PCE of 6.01%, due to the lower light trapping capability and the less hole extraction efficiency. It indicated that both the SiNWs structure and the thin organic layer top contact were critical to achieve a high performance organic/silicon solar cell.

In(x)Ga(₁-x)As nanowires on silicon: one-dimensional heterogeneous epitaxy, bandgap engineering, and photovoltaics

We report on the one-dimensional (1D) heteroepitaxial growth of In(x)Ga(1-x)As (x = 0.2-1) nanowires (NWs) on silicon (Si) substrates over almost the entire composition range using metalorganic chemical vapor deposition (MOCVD) without catalysts or masks. The epitaxial growth takes place spontaneously producing uniform, nontapered, high aspect ratio NW arrays with a density exceeding 1 × 10(8)/cm(2). NW diameter (∼30-250 nm) is inversely proportional to the lattice mismatch between In(x)Ga(1-x)As and Si (∼4-11%), and can be further tuned by MOCVD growth condition. Remarkably, no dislocations have been found in all composition In(x)Ga(1-x)As NWs, even though massive stacking faults and twin planes are present. Indium rich NWs show more zinc-blende and Ga-rich NWs exhibit dominantly wurtzite polytype, as confirmed by scanning transmission electron microscopy (STEM) and photoluminescence spectra. Solar cells fabricated using an n-type In(0.3)Ga(0.7)As NW array on a p-type Si(111) substrate with a ∼ 2.2% area coverage, operates at an open circuit voltage, V(oc), and a short circuit current density, J(sc), of 0.37 V and 12.9 mA/cm(2), respectively. This work represents the first systematic report on direct 1D heteroepitaxy of ternary In(x)Ga(1-x)As NWs on silicon substrate in a wide composition/bandgap range that can be used for wafer-scale monolithic heterogeneous integration for high performance photovoltaics.

High optical quality InP-based nanopillars fabricated by a top-down approach

Dense and uniform arrays of InP-based nanopillars were fabricated by dry etching using self-assembly of colloidal silica particles for masking. The pillars, both single and arrays, fabricated from epitaxially grown InP and InP/GaInAsP/InP quantum well structures show excellent photoluminescence (PL) even at room temperature. The measured PL line widths are comparable to the as-grown wafer indicating high quality fabricated pillars. A stamping technique enables transfer with arbitrary densities of the nanopillars freed from the substrate by selectively etching a sacrificial InGaAs layer.

Ultrahigh throughput silicon nanomanufacturing by simultaneous reactive ion synthesis and etching

One-dimensional nanostructures, such as nanowhisker, nanorod, nanowire, nanopillar, nanocone, nanotip, nanoneedle, have attracted significant attentions in the past decades owing to their numerous applications in electronics, photonics, energy conversion and storage, and interfacing with biomolecules and living cells. The manufacturing of nanostructured devices relies on either bottom-up approaches such as synthesis or growth process or top-down approaches such as lithography or etching process. Here we report a unique, synchronized, and simultaneous top-down and bottom-up nanofabrication approach called simultaneous plasma enhanced reactive ion synthesis and etching (SPERISE). For the first time the atomic addition and subtraction of nanomaterials are concurrently observed and precisely controlled in a single-step process permitting ultrahigh-throughput, lithography-less, wafer-scale, and room-temperature nanomanufacturing. Rapid low-cost manufacturing of high-density, high-uniformity, light-trapping nanocone arrays was demonstrated on single crystalline and polycrystalline silicon wafers, as well as amorphous silicon thin films. The proposed nanofabrication mechanisms also provide a general guideline to designing new SPERISE methods for other solid-state materials besides silicon.

Colloidal self-assembly-directed laser-induced non-close-packed crystalline silicon nanostructures

This report describes an ultrafast, large-area, and highly flexible method to construct complex two- and three-dimensional silicon nanostructures with deterministic non-close-packed symmetry. Pulsed excimer laser irradiation is used to induce a transient melt transformation of amorphous silicon filled in a colloidal self-assembly-directed inverse opal template, resulting in a nanostructured crystalline phase. The pattern transfer yields are high, and long-range order is maintained. This technique represents a potential route to obtain silicon nanostructures of various symmetries and associated unique properties for advanced applications such as energy storage and generation.

Bulk synthesis of crystalline and crystalline core/amorphous shell silicon nanowires and their application for energy storage

Silicon nanowires (NWs) have stimulated significant interest and found numerous applications; however, many applications will require a bulk quantity of nanowires to be synthesized in a reliable way. In this paper, we report the bulk synthesis of silicon nanowires on millimeter scale Al(2)O(3) spheres with a thermal chemical vapor deposition system (CVD) via the vapor-liquid-solid (VLS) growth mechanism. The spherical substrates enable the realization of Si nanowire synthesis on three-dimensional surfaces in comparison with the synthesis on a planar, two-dimensional wafer substrate. By modifying temperature in the recipe of synthesis, both single-crystalline and crystalline core/amorphous shell Si nanowires were obtained with this nanowire-on-spherical-support method. Conspicuous distinction in crystallinity of the nanowires was revealed by transmission electron microscopy characterization. The crystalline core/amorphous shell Si nanowires were utilized to form the anode of Li-ion battery half-cells with the traditional slurry method. Galvanostatic measurement demonstrated that the maximum power capacity achievable by the electrodes was 3500 mAh/g and capacity sustained at 1100 mAh/g after 60 cycles of charging and discharging.

Optimized spatial correlations for broadband light trapping nanopatterns in high efficiency ultrathin film a-Si:H solar cells

Nanophotonic structures have attracted attention for light trapping in solar cells with the potential to manage and direct light absorption on the nanoscale. While both randomly textured and nanophotonic structures have been investigated, the relationship between photocurrent and the spatial correlations of random or designed surfaces has been unclear. Here we systematically design pseudorandom arrays of nanostructures based on their power spectral density, and correlate the spatial frequencies with measured and simulated photocurrent. The integrated cell design consists of a patterned plasmonic back reflector and a nanostructured semiconductor top interface, which gives broadband and isotropic photocurrent enhancement.

Growth of CuInSe2 and In2Se3/CuInSe2 nano-heterostructures through solid state reactions

In(2)Se(3) is an essential phase change material and CuInSe(2) is the fundamental basis of the copper-indium-gallium-diselenide (CIGS) solar energy material. In this paper, we demonstrate the feasibility to transform the phase change material to the solar energy material via the solid state reaction. The In(2)Se(3) nanobelts (NBs) were synthesized via the vapor-liquid-solid mechanism. The chemical composition and the optical properties were investigated by energy dispersive spectroscopy, X-ray photoelectron spectroscopy, and reflectance and photoluminescence spectra. In the in situ observation of the solid state reaction with Cu to form the CuInSe(2) NBs with ultrahigh vacuum transmission electron microscopy, we observed the In(2)Se(3)/CuInSe(2) transformation at atomic scale in real time. The progression of the atomic layer at the interface provided the pertinent information on the kinetic mechanism. In(2)Se(3)/CuInSe(2) nano-heterostructures were also obtained in the present investigation. The approach to the CIGS nanosolar cell was also proposed. This study shall be beneficial in the development of high-performance nanowire solar cells and nanodevices with In(2)Se(3)/CuInSe(2) nano-heterostructures.

Bringing order to the world of nanowire devices by phase shift lithography

Semiconductor nanowire devices have several properties which match future requirements of scaling down the size of electronics. In typical microelectronics production, a number of microstructures are aligned precisely on top of each other during the fabrication process. In the case of nanowires, this mandatory condition is still hard to achieve. A technological breakthrough is needed to accurately place nanowires at any specific position and then form devices in mass production. In this article, an upscalable process combining conventional micromachining with phase shift lithography will be demonstrated as a suitable tool for nanowire device technology. Vertical Si and ZnO nanowires are demonstrated on very large (several cm(2)) areas. We demonstrate how the nanowire positions can be controlled, and the resulting nanowires are used for device fabrication. As an example Si/ZnO heterojunction diode arrays are fabricated. The electrical characterization of the produced devices has also been performed to confirm the functionality of the fabricated diodes.

Real-time observation of impurity diffusion in silicon nanowires

Solid-state diffusion of the transition metal impurities, gold (Au), nickel (Ni), and copper (Cu), in silicon (Si) nanowires was studied by in situ transmission electron microscopy. Compared to diffusion in a bulk crystal, Au diffusion is extremely slow when the amount of metal is limited but significantly enhanced when an unlimited supply is available. Cu and Ni diffusion leads to rapid silicide formation but slows considerably with physical encapsulation by a volume-restricting carbon shell.

Three-dimensional multiple-order twinning of self-catalyzed GaAs nanowires on Si substrates

In this paper we introduce a new paradigm for nanowire growth that explains the unwanted appearance of parasitic nonvertical nanowires. With a crystal structure polarization analysis of the initial stages of GaAs nanowire growth on Si substrates, we demonstrate that secondary seeds form due to a three-dimensional twinning phenomenon. We derive the geometrical rules that underlie the multiple growth directions observed experimentally. These rules help optimizing nanowire array devices such as solar or water splitting cells or of more complex hierarchical branched nanowire devices.

Wafer-scale high-throughput ordered arrays of Si and coaxial Si/Si(1-x)Ge(x) wires: fabrication, characterization, and photovoltaic application

We have developed a method combining lithography and catalytic etching to fabricate large-area (uniform coverage over an entire 5-in. wafer) arrays of vertically aligned single-crystal Si nanowires with high throughput. Coaxial n-Si/p-SiGe wire arrays are also fabricated by further coating single-crystal epitaxial SiGe layers on the Si wires using ultrahigh vacuum chemical vapor deposition (UHVCVD). This method allows precise control over the diameter, length, density, spacing, orientation, shape, pattern and location of the Si and Si/SiGe nanowire arrays, making it possible to fabricate an array of devices based on rationally designed nanowire arrays. A proposed fabrication mechanism of the etching process is presented. Inspired by the excellent antireflection properties of the Si/SiGe wire arrays, we built solar cells based on the arrays of these wires containing radial junctions, an example of which exhibits an open circuit voltage (V(oc)) of 650 mV, a short-circuit current density (J(sc)) of 8.38 mA/cm(2), a fill factor of 0.60, and an energy conversion efficiency (η) of 3.26%. Such a p-n radial structure will have a great potential application for cost-efficient photovoltaic (PV) solar energy conversion.

Low-temperature self-catalytic growth of tin oxide nanocones over large areas

Nanoscale texturing has been studied for various applications, but most of the methods used to make these nanostructures are expensive and not easily scalable. Some of these methods require etching steps or high-temperature processes, which limit the processes to certain materials, such as silicon. In this study, we report a non-etching nanoscale texturing technique that allows for controlled oxidation to create tin oxide nanocones over large areas. Similar results are obtained on different substrates, such as silicon, aluminum foil, quartz, and polyimide film, and this method can be employed at temperatures as low as 220 °C in ambient pressure. This simple and scalable nanotexturing process improves the anti-reflection effect in photovoltaic devices. The light absorption of a polycrystalline silicon substrate, a widely used photovoltaic material, is increased by 30% over the wavelength range of 400-850 nm after fabricating nanocones on the surface.