Waveguide-integrated light-emitting carbon nanotubes

Correlation Measurements for Carbon Nanotubes with Quantum Defects

Single-photon sources are essential building blocks for the development of photonic quantum technology. Regarding potential practical application, an on-demand electrically driven quantum-light emitter on a chip is notably crucial for photonic integrated circuits. Here, we propose functionalized single-walled carbon nanotube field-effect transistors as a promising solid-state quantum-light source by demonstrating photon antibunching behavior via electrical excitation. The sp3 quantum defects were formed on the surface of (7, 5) carbon nanotubes by 3,5-dichlorophenyl functionalization, and individual carbon nanotubes were wired to graphene electrode pairs. Filtered electroluminescent defect-state emission at 77 K was coupled into a Hanbury Brown and Twiss experiment setup, and single-photon emission was observed by performing second-order correlation function measurements. We discuss the dependence of the intensity correlation measurement on electrical power and emission wavelength, highlighting the challenges of performing such measurements while simultaneously analyzing acquired data. Our results indicate a route toward room-temperature electrically triggered single-photon emission.

Silicon Waveguide-Integrated Carbon Nanotube Photodetector with Low Dark Current and 48 GHz Bandwidth

Low-dimensional materials with excellent optoelectronic properties and complementary metal-oxide-semiconductor (CMOS) process compatibility have the potential to construct high-performance photodetectors used in a cost-efficient monolithic or hybrid integrated optical communication system. Carbon nanotubes (CNTs) have attracted a lot of attention due to special geometric structure and broad band response, high optical absorption coefficient, ps-level intrinsic light response, high carrier mobility and wafer-scaled production process. Here, we demonstrated a high-performance waveguide-integrated CNT photodetector with asymmetric palladium (Pd) and hafnium (Hf) contact electrodes. The ideal photodetector structure was realized via comparing with simulation and experimental results, where the optimized device achieved a high 3 dB bandwidth ∼48 GHz at 0 V, as well as a responsivity ∼73.62 mA/W and dark current ∼0.157 μA at -2 V bias voltage. This waveguide-integrated CNT photodetector with low dark current and high bandwidth is helpful for next-generation optical communication and high-speed optical interconnects.

Chirality-Enriched Carbon Nanotubes for Next-Generation Computing

For the past half century, silicon has served as the primary material platform for integrated circuit technology. However, the recent proliferation of nontraditional electronics, such as wearables, embedded systems, and low-power portable devices, has led to increasingly complex mechanical and electrical performance requirements. Among emerging electronic materials, single-walled carbon nanotubes (SWCNTs) are promising candidates for next-generation computing as a result of their superlative electrical, optical, and mechanical properties. Moreover, their chirality-dependent properties enable a wide range of emerging electronic applications including sub-10 nm complementary field-effect transistors, optoelectronic integrated circuits, and enantiomer-recognition sensors. Here, recent progress in SWCNT-based computing devices is reviewed, with an emphasis on the relationship between chirality enrichment and electronic functionality. In particular, after highlighting chirality-dependent SWCNT properties and chirality enrichment methods, the range of computing applications that have been demonstrated using chirality-enriched SWCNTs are summarized. By identifying remaining challenges and opportunities, this work provides a roadmap for next-generation SWCNT-based computing.

Silicon-Waveguide-Integrated Carbon Nanotube Optoelectronic System on a Single Chip

Monolithic optoelectronic integration based on a single material is a major pursuit in the fields of nanophotonics and nanoelectronics in order to meet the requirements of future fiber-optic telecommunication systems and on-chip optical interconnection systems. However, the incompatibility between silicon-based electronics and germanium or compound semiconductor-based photonics makes it very challenging to realize optoelectronic integration based on a single material. Here, the integration between silicon waveguides and a carbon nanotube (CNT) optoelectronic system is demonstrated. Waveguide-integrated photodetectors based on the CNT exhibit 12.5 mA/W photoresponsivity at 1530 nm, which presents an improvement of 97.6 times enhanced absorption efficiency compared to that without the waveguide. Multiplied output signals of cascading photodetectors are used to control the output of CNT-based logic gates, thereby demonstrating that the CNT-based optoelectronic integration system is compatible with silicon photonics. Our work indicates that carbon nanotubes have the potential for future integration between nanophotonics and nanoelectronics on a single chip.

Low-Temperature Electroluminescence Excitation Mapping of Excitons and Trions in Short-Channel Monochiral Carbon Nanotube Devices

Single-walled carbon nanotubes as emerging quantum-light sources may fill a technological gap in silicon photonics due to their potential use as near-infrared, electrically driven, classical or nonclassical emitters. Unlike in photoluminescence, where nanotubes are excited with light, electrical excitation of single tubes is challenging and heavily influenced by device fabrication, architecture, and biasing conditions. Here we present electroluminescence spectroscopy data of ultra-short-channel devices made from (9,8) carbon nanotubes emitting in the telecom band. Emissions are stable under current biasing, and no enhanced suppression is observed down to 10 nm gap size. Low-temperature electroluminescence spectroscopy data also reported exhibit cold emission and line widths down to 2 meV at 4 K. Electroluminescence excitation maps give evidence that carrier recombination is the mechanism for light generation in short channels. Excitonic and trionic emissions can be switched on and off by gate voltage, and corresponding emission efficiency maps were compiled. Insights are gained into the influence of acoustic phonons on the line width, absence of intensity saturation and exciton-exciton annihilation, environmental effects such as dielectric screening and strain on the emission wavelength, and conditions to suppress hysteresis and establish optimum operation conditions.

Auger Suppression of Incandescence in Individual Suspended Carbon Nanotube pn-Junctions

There are various mechanisms of light emission in carbon nanotubes (CNTs), which give rise to a wide range of spectral characteristics that provide important information. Here we report suppression of incandescence via Auger recombination in suspended carbon nanotube pn-junctions generated from dual-gate CNT field-effect transistor (FET) devices. By applying equal and opposite voltages to the gate electrodes (i.e., V_g1 = -V_g2), we create a pn-junction within the CNT. Under these gating conditions, we observe a sharp peak in the incandescence intensity around zero applied gate voltage, where the intrinsic region has the largest spatial extent. Here, the emission occurs under high electrical power densities of around 0.1 MW/cm² (or 6 μW) and arises from thermal emission at elevated temperatures above 800 K (i.e., incandescence). It is somewhat surprising that this thermal emission intensity is so sensitive to the gating conditions, and we observe a 1000-fold suppression of light emission between V_g1 = 0 and 15 V, over a range in which the electrical power dissipated in the nanotube is roughly constant. This behavior is understood on the basis of Auger recombination, which suppresses light emission by the excitation of free carriers. Based on the calculated carrier density and band profiles, the length of the intrinsic region drops by a factor of 7-25× over the range from |V_g| = 0 to 15 V. We, therefore, conclude that the light emission intensity is significantly dependent on the free carrier density profile and the size of the intrinsic region in these CNT devices.

Nanoscale Patterning of Carbon Nanotubes: Techniques, Applications, and Future

Carbon nanotube (CNT) devices and electronics are achieving maturity and directly competing or surpassing devices that use conventional materials. CNTs have demonstrated ballistic conduction, minimal scaling effects, high current capacity, low power requirements, and excellent optical/photonic properties; making them the ideal candidate for a new material to replace conventional materials in next-generation electronic and photonic systems. CNTs also demonstrate high stability and flexibility, allowing them to be used in flexible, printable, and/or biocompatible electronics. However, a major challenge to fully commercialize these devices is the scalable placement of CNTs into desired micro/nanopatterns and architectures to translate the superior properties of CNTs into macroscale devices. Precise and high throughput patterning becomes increasingly difficult at nanoscale resolution, but it is essential to fully realize the benefits of CNTs. The relatively long, high aspect ratio structures of CNTs must be preserved to maintain their functionalities, consequently making them more difficult to pattern than conventional materials like metals and polymers. This review comprehensively explores the recent development of innovative CNT patterning techniques with nanoscale lateral resolution. Each technique is critically analyzed and applications for the nanoscale-resolution approaches are demonstrated. Promising techniques and the challenges ahead for future devices and applications are discussed.

Indistinguishable Photons from Deterministically Integrated Single Quantum Dots in Heterogeneous GaAs/Si3N4 Quantum Photonic Circuits

Silicon photonics enables scaling of quantum photonic systems by allowing the creation of extensive, low-loss, reconfigurable networks linking various functional on-chip elements. Inclusion of single quantum emitters onto photonic circuits, acting as on-demand sources of indistinguishable photons or single-photon nonlinearities, may enable large-scale chip-based quantum photonic circuits and networks. Toward this, we use low-temperature in situ electron-beam lithography to deterministically produce hybrid GaAs/Si3N4 photonic devices containing single InAs quantum dots precisely located inside nanophotonic structures, which act as efficient, Si3N4 waveguide-coupled on-chip, on-demand single-photon sources. The precise positioning afforded by our scalable fabrication method furthermore allows observation of postselected indistinguishable photons. This indicates a promising path toward significant scaling of chip-based quantum photonics, enabled by large fluxes of indistinguishable single-photons produced on-demand, directly on-chip.

Improving the Performance and Uniformity of Carbon-Nanotube-Network-Based Photodiodes via Yttrium Oxide Coating and Decoating

Semiconducting single-walled carbon nanotube thin films can be obtained by conjugated polymer wrapping sorting technique followed by solution deposition and can be utilized as channel materials of field-effect transistors and absorbing layers of photodiodes. However, after the deposition process, there are still polymer molecules wrapping around nanotubes, remaining between nanotubes, and remaining on the thin-film surface, which will cause large nanotube-electrode resistance and tube-tube resistance. Here, we demonstrate an yttrium oxide coating-and-decoating technique that can remove polymers only around electrodes and thus improve the performance of photodiodes without inducing new defects in the device channel. After the treatment of only the contact area, the average short-circuit current of a photodiode increases from 9.1 to 10.7 nA, whereas the average open-circuit voltage increases from 0.25 to 0.30 V. This method also improves device uniformity significantly.

Separation of Small-Diameter Single-Walled Carbon Nanotubes in One to Three Steps with Aqueous Two-Phase Extraction

An aqueous two-phase extraction (ATPE) technique capable of separating small-diameter single-walled carbon nanotubes in one, two, or at the most three steps is presented. Separation is performed in the well-studied two-phase system containing polyethylene glycol and dextran, but it is achieved without changing the global concentration or ratio of cosurfactants. Instead, the technique is reliant upon the different surfactant shell around each nanotube diameter at a fixed surfactant concentration. The methodology to obtain a single set of surfactant conditions is provided, and strategies to optimize these for other diameter regimes are discussed. In total, 11 different chiralities in the diameter range 0.69-0.91 nm are separated. These include semiconducting and both armchair and nonarmchair metallic nanotube species. Titration of cosurfactant suspensions reveal separation to be driven by the pH of the suspension with each ( n, m) species partitioning at a fixed pH. This allows for an ( n, m) separation approach to be presented that is as simple as pipetting known volumes of acid into the ATPE system.

A light emitter based on practicable and mass-producible polycrystalline graphene patterned directly on silicon substrates from a solid-state carbon source

We developed a procedure for direct patterning of graphene with arbitrary position, size, and shape on silicon substrates from a solid-state carbon source without dry etching processing. Our light emitting graphene devices perform on a par with those based on high crystallinity graphene obtained via mechanical exfoliation or chemical vapor deposition.

We developed a procedure for direct patterning graphene with arbitrary position, size, and shape on Si from a solid-state carbon source without dry etching. Our light emitting devices perform on a par with those based on high crystallinity graphene.

Carbon-nanotube-on-waveguide thermo-optic tuners

We demonstrate on-waveguide thermo-optic tuners based on solution-processed metallic carbon nanotubes (CNTs) on silicon-on-insulator (SOI) and silicon nitride (SiN) microring resonators operating around 1550 nm. On SOI microring resonators using planarized wire waveguides, a thermo-optic power efficiency of 29 mW/FSR and a thermal transient of 1.3 μs are achieved. The heater is shown to be more power-efficient than conventional metal heaters and has lower thermal transient than both metal heaters and graphene-based heaters. On SiN microring resonators using rib waveguides, improvement in power efficiency with an increase in coverage of CNTs is demonstrated, indicating localized heating using the CNTs; this is favorable for low thermal cross-talk. An optimal power efficiency of 142 mW/FSR and a thermal transient of 5.8 μs are achieved.

Carbon nanotubes as emerging quantum-light sources

Progress in quantum computing and quantum cryptography requires efficient, electrically triggered, single-photon sources at room temperature in the telecom wavelengths. It has been long known that semiconducting single-wall carbon nanotubes (SWCNTs) display strong excitonic binding and emit light over a broad range of wavelengths, but their use has been hampered by a low quantum yield and a high sensitivity to spectral diffusion and blinking. In this Perspective, we discuss recent advances in the mastering of SWCNT optical properties by chemistry, electrical contacting and resonator coupling towards advancing their use as quantum light sources. We describe the latest results in terms of single-photon purity, generation efficiency and indistinguishability. Finally, we consider the main fundamental challenges stemming from the unique properties of SWCNTs and the most promising roads for SWCNT-based chip integrated quantum photonic sources.

High-speed and on-chip graphene blackbody emitters for optical communications by remote heat transfer

High-speed light emitters integrated on silicon chips can enable novel architectures for silicon-based optoelectronics, such as on-chip optical interconnects, and silicon photonics. However, conventional light sources based on compound semiconductors face major challenges for their integration with a silicon-based platform because of their difficulty of direct growth on a silicon substrate. Here we report ultra-high-speed (100-ps response time), highly integrated graphene-based on-silicon-chip blackbody emitters in the near-infrared region including telecommunication wavelength. Their emission responses are strongly affected by the graphene contact with the substrate depending on the number of graphene layers. The ultra-high-speed emission can be understood by remote quantum thermal transport via surface polar phonons of the substrates. We demonstrated real-time optical communications, integrated two-dimensional array emitters, capped emitters operable in air, and the direct coupling of optical fibers to the emitters. These emitters can open new routes to on-Si-chip, small footprint, and high-speed emitters for highly integrated optoelectronics and silicon photonics.

Integrating graphene with existing silicon technologies may pave the way to compact light sources for optoelectronics and photonics. Here, the authors fabricate graphene-based arrays of blackbody emitters integrated on a silicon chip, operating in the near-infrared region at high speed.

Multi-exciton emission from solitary dopant states of carbon nanotubes

By separating the photons from slow and fast decays of single and multi-exciton states in a time gated 2^nd order photon correlation experiment, we show that solitary oxygen dopant states of single-walled carbon nanotubes (SWCNTs) allow emission of photon pairs with efficiencies as high as 44% of single exciton emission. Our pump dependent time resolved photoluminescence (PL) studies further reveal diffusion-limited exciton-exciton annihilation as the key process that limits the emission of multi-excitons at high pump fluences. We further postulate that creation of additional permanent exciton quenching sites occurring under intense laser irradiation leads to permanent PL quenching. With this work, we bring out multi-excitonic processes of solitary dopant states as a new area to be explored for potential applications in lasing and entangled photon generation.

Photocurrent spectroscopy of dye-sensitized carbon nanotubes

Monochiral (7,5) single walled carbon nanotubes (SWCNTs) are integrated into a field effect transistor device in which the built-in electric field at the nanotube/metal contact allows for exciton separation under illumination. Variable wavelength spectroscopy and 2D surface mapping of devices consisting of 10-20 nanotubes are performed in the visible region and a strong correlation between the nanotube's second optical transition (S₂₂) and the photocurrent is found. After integration, the SWCNTs are non-covalently modified with three different fluorescent dye molecules with off-resonant absorption maxima at 532 nm, 565 nm, and 610 nm. The dyes extend the absorption properties of the nanotube and contribute to the photocurrent. This approach holds promise for the development of photo-detectors and for applications in photovoltaics and biosensing.

Sub-nanosecond light-pulse generation with waveguide-coupled carbon nanotube transducers

Carbon nanotubes (CNTs) have recently been integrated into optical waveguides and operated as electrically-driven light emitters under constant electrical bias. Such devices are of interest for the conversion of fast electrical signals into optical ones within a nanophotonic circuit. Here, we demonstrate that waveguide-integrated single-walled CNTs are promising high-speed transducers for light-pulse generation in the gigahertz range. Using a scalable fabrication approach we realize hybrid CNT-based nanophotonic devices, which generate optical pulse trains in the range from 200 kHz to 2 GHz with decay times below 80 ps. Our results illustrate the potential of CNTs for hybrid optoelectronic systems and nanoscale on-chip light sources.

Near-infrared exciton-polaritons in strongly coupled single-walled carbon nanotube microcavities

Exciton-polaritons form upon strong coupling between electronic excitations of a material and photonic states of a surrounding microcavity. In organic semiconductors the special nature of excited states leads to particularly strong coupling and facilitates condensation of exciton-polaritons at room temperature, which may lead to electrically pumped organic polariton lasers. However, charge carrier mobility and photo-stability in currently used materials is limited and exciton-polariton emission so far has been restricted to visible wavelengths. Here, we demonstrate strong light-matter coupling in the near infrared using single-walled carbon nanotubes (SWCNTs) in a polymer matrix and a planar metal-clad cavity. By exploiting the exceptional oscillator strength and sharp excitonic transition of (6,5) SWCNTs, we achieve large Rabi splitting (>110 meV), efficient polariton relaxation and narrow band emission (<15 meV). Given their high charge carrier mobility and excellent photostability, SWCNTs represent a promising new avenue towards practical exciton-polariton devices operating at telecommunication wavelengths.

Microcavity-Integrated Carbon Nanotube Photodetectors

Carbon nanotubes (CNTs) are considered to be highly promising nanomaterials for multiwavelength, room-temperature infrared detection applications. Here, we demonstrate a single-tube diode photodetector monolithically integrated with a Fabry-Pérot microcavity. A ∼6-fold enhanced optical absorption can be achieved, because of the confined effect of the designed optical mode. Furthermore, taking advantage of Van-Hove-singularity band structures in CNTs, we open the possibility of developing chirality-specific (n,m) CNT-film-based signal detectors. Utilizing a concept of the "resonance and off-resonance" cavity, we achieved cavity-integrated chirality-sorted CNT-film detectors working at zero bias and resonance-allowed mode, for specific target signal detection. The detectors exhibited a higher suppression ratio until a power density of 0.07 W cm(-2) and photocurrent of 5 pA, and the spectral full width at half-maximum is ∼33 nm at a signal wavelength of 1200 nm. Further, with multiple array detectors aiming at different target signals integrated on a chip, a multiwavelength signal detector system can be expected to have applications in the fields of monitoring, biosensing, color imaging, signal capture, and on-chip or space information transfers. The approach can also bring other nanomaterials into on-chip or information optoelectronics, regardless of the available doping polarity.

Solid state carbon nanotube device for controllable trion electroluminescence emission

Semiconducting carbon nanotubes (CNTs) have a direct chirality-dependent bandgap and reduced dimensionality-related quantum confinement effects, which are closely related to the performance of optoelectronic devices. Here, taking advantage of the large energy separations between neutral singlet excitons and charged excitons, i.e. trions in CNTs, we have achieved for the first time all trion electroluminescence (EL) emission from chirality-sorted (8,3) and (8,4) CNT-based solid state devices. We showed that strong trion emission can be obtained as a result of localized impact excitation and electrically injected holes, with an estimated efficiency of ∼5 × 10(-4) photons per injected hole. The importance of contact-controlled carrier injection (including symmetric and asymmetric contact configurations) and EL spectral stability for gradually increasing bias were also investigated. The realization of electrically induced pure trion emission opens up a new opportunity for CNT film-based optoelectronic devices, providing a new degree of freedom in controlling the devices to extend potential applications in spin or magnetic optoelectronics fields.

Directional couplers with integrated carbon nanotube incandescent light emitters

We combine on-chip single-walled carbon nanotubes (SWNTs) emitters with directional coupling devices as fundamental building blocks for carbon photonic systems. These devices are essential for studying the emission properties of SWNTs in the few photon regime for future applications in on-chip quantum photonics. The combination of SWNTs with on-chip beam splitters herein provides the basis for correlation measurements as necessary for nanoscale source characterization. The employed fabrication methods are fully scalable and thus allow for implementing a multitude of functional and active circuits in a single fabrication run. Our metallic SWNT emitters are broadband and cover both visible and near-infrared wavelengths, thus holding promise for emerging hybrid optoelectronic devices with fast reconfiguration times.

Guided Photoluminescence from Integrated Carbon-Nanotube-Based Optical Waveguides

Thin films and ridge waveguides based on large-diameter semiconducting single-wall carbon nanotubes (s-SWCNTs) dispersed in a polyfluorene derivative are fabricated and optically characterized. Ridge waveguides are designed with appropriate dimensions for single-mode propagation at 1550 nm. Using multimode ridge waveguides, guided s-SWCNT photoluminescence is demonstrated for the first time in the near-infrared telecommunications window.

Enhanced light emission from carbon nanotubes integrated in silicon micro-resonator

Single-walled carbon nanotubes are considered a fascinating nanomaterial for photonic applications and are especially promising for efficient light emitters in the telecommunication wavelength range. Furthermore, their hybrid integration with silicon photonic structures makes them an ideal platform to explore their intrinsic properties. Here we report on the strong photoluminescence enhancement from carbon nanotubes integrated in silicon ring resonator circuits under two pumping configurations: surface-illuminated pumping at 735 nm and collinear pumping at 1.26 μm. Extremely efficient rejection of the non-resonant photoluminescence was obtained. In the collinear approach, an emission efficiency enhancement by a factor of 26 has been demonstrated in comparison with the classical pumping scheme. This demonstration paves the way for the development of integrated light sources in silicon based on carbon nanotubes.

Double-walled carbon nanotube processing

Single-walled carbon nanotubes (SWCNTs) have been the focus of intense research, and the body of literature continues to grow exponentially, despite more than two decades having passed since the first reports. As well as extensive studies of the fundamental properties, this has seen SWCNTs used in a plethora of applications as far ranging as microelectronics, energy storage, solar cells, and sensors, to cancer treatment, drug delivery, and neuronal interfaces. On the other hand, the properties and applications of double-walled carbon nanotubes (DWCNTs) have remained relatively under-explored. This is despite DWCNTs not only sharing many of the same unique characteristics of their single-walled counterparts, but also possessing an additional suite of potentially advantageous properties arising due to the presence of the second wall and the often complex inter-wall interactions that arise. For example, it is envisaged that the outer wall can be selectively functionalized whilst still leaving the inner wall in its pristine state and available for signal transduction. A similar situation arises in DWCNT field effect transistors (FETs), where the outer wall can provide a convenient degree of chemical shielding of the inner wall from the external environment, allowing the excellent transconductance properties of the pristine nanotubes to be more fully exploited. Additionally, DWCNTs should also offer unique opportunities to further the fundamental understanding of the inter-wall interactions within and between carbon nanotubes. However, the realization of these goals has so far been limited by the same challenge experienced by the SWCNT field until recent years, namely, the inherent heterogeneity of raw, as-produced DWCNT material. As such, there is now an emerging field of research regarding DWCNT processing that focuses on the preparation of material of defined length, diameter and electronic type, and which is rapidly building upon the experience gained by the broader SWCNT community. This review describes the background of the field, summarizing some relevant theory and the available synthesis and purification routes; then provides a thorough synopsis of the current state-of-the-art in DWCNT sorting methodologies, outlines contemporary challenges in the field, and discusses the outlook for various potential applications of the resulting material.

Illuminating the future of silicon photonics: optical coupling of carbon nanotubes to microrings

Advances in carbon nanotube material quality and processing techniques have led to an increased interest in nanotube photonics. In particular, emission in the telecommunication wavelengths makes nanotubes compatible with silicon photonics. Noury et al (2014 Nanotechnology 25 215201) have reported on carbon nanotube photoluminescence coupled to silicon microring resonators, underscoring the advantage of combining carbon nanotube emitters with silicon photonics. Their results open up the possibility of using nanotubes in other waveguide-based devices, taking advantage of well-established technologies.