Graphene single crystals: size and morphology engineering

Effect of Ar on Temperature and Flow Distribution in Monocrystalline Graphene Growth: Inert Gas Is Active

Monocrystalline graphene growth has always been an intriguing research focus. Argon (Ar) is merely viewed as a carrier gas due to its inert chemical properties throughout the whole growth procedure by the chemical vapor deposition method. In this work, the influence of Ar on temperature and flow fields was investigated in consideration of its physical parameter difference among all involved gases. Results by experimental characterization and fluid dynamics simulation showed that the temperature elevated, and the velocity of the mixed gas increased as the Ar flow rates rose. Furthermore, the deposition rate of C on the Cu surface, representing graphene generation rate, was studied as the Ar flow rate changed in combination with CH4 decomposition reaction. Based on the effects made by Ar, a method was proposed, where the Ar flow rate was dynamically regulated to break monocrystalline graphene growth cessation. The graphene size was enlarged, and the nucleation site density was reduced remarkably compared with a common consistent Ar flow. It is believed that this work would provide a new perspective in two-dimensional material preparation by combining basic properties with temperature and field distribution in the whole reaction system.

Breaking the Thermodynamic Equilibrium for Monocrystalline Graphene Fabrication by Ambient Pressure Regulation

Developing high-quality monocrystalline graphene has been an area of compelling research focus in the field of two-dimensional materials. Overcoming growth cessation presents a significant challenge in advancing the production of monocrystalline graphene. Herein, methods for sustaining a steady and consistent growth driving force are investigated based on the single-crystal growth theory. Comparative analysis revealed that each dynamic regulation method significantly increased the size of graphene compared to samples grown under stable pressure conditions. The grain size of high-quality graphene was significantly increased from ∼400 μm to ∼3 mm. Moreover, experimental measurements and numerical simulations were employed to investigate the impact of ambient pressure on the temperature and flow field. By considering the influence of pressure on the boundary layer and reaction rate constant, the mechanism underlying the dynamic regulation of ambient pressure was elucidated. Ultimately, the crystal growth kinetics theory, initially formulated with considerations of undercooling ΔT and supersaturation Seff, was developed by inducing the individual parameter of ambient pressure P. Due to diameter expansion and mechanical property promotion, a bilayer graphene Fabry-Perot interference (1100 μm) sensor with a stable signal response (52 dB) and superior minimum detection pressure at 20 kHz (87 μPa/Hz1/2) was prepared. This innovative approach to regulating ambient pressure during crystal growth enables monocrystalline graphene to possess superior structure and properties for future technologies and provides insights into the production of other two-dimensional materials.

Atomic engineering of two-dimensional materials via liquid metals

Two-dimensional (2D) materials, known for their distinctive electronic, mechanical, and thermal properties, have attracted considerable attention. The precise atomic-scale synthesis of 2D materials opens up new frontiers in nanotechnology, presenting novel opportunities for material design and property control but remains challenging due to the high expense of single-crystal solid metal catalysts. Liquid metals, with their fluidity, ductility, dynamic surface, and isotropy, have significantly enhanced the catalytic processes crucial for synthesizing 2D materials, including decomposition, diffusion, and nucleation, thus presenting an unprecedented precise control over material structures and properties. Besides, the emergence of liquid alloy makes the creation of diverse heterostructures possible, offering a new dimension for atomic engineering. Significant achievements have been made in this field encompassing defect-free preparation, large-area self-aligned array, phase engineering, heterostructures, etc. This review systematically summarizes these contributions from the aspects of fundamental synthesis methods, liquid catalyst selection, resulting 2D materials, and atomic engineering. Moreover, the review sheds light on the outlook and challenges in this evolving field, providing a valuable resource for deeply understanding this field. The emergence of liquid metals has undoubtedly revolutionized the traditional nanotechnology for preparing 2D materials on solid metal catalysts, offering flexible possibilities for the advancement of next-generation electronics.

Optimizing Ultrathin 2D Transistors for Monolithic 3D Integration: A Study on Directly Grown Nanocrystalline Interconnects and Buried Contacts

The potential of monolithic 3D integration technology is largely dependent on the enhancement of interconnect characteristics which can lead to thinner stacks, better heat dissipation, and reduced signal delays. Carbon materials such as graphene, characterized by sp2 hybridized carbons, are promising candidates for future interconnects due to their exceptional electrical, thermal conductivity and resistance to electromigration. However, a significant challenge lies in achieving low contact resistance between extremely thin semiconductor channels and graphitic materials. To address this issue, an innovative wafer-scale synthesis approach is proposed that enables low contact resistance between dry-transferred 2D semiconductors and the as-grown nanocrystalline graphitic interconnects. A hybrid graphitic interconnect with metal doping reduces the sheet resistance by 84% compared to an equivalent thickness metal film. Furthermore, the introduction of a buried graphitic contact results in a contact resistance that is 17 times lower than that of bulk metal contacts (>40 nm). Transistors with this optimal structure are used to successfully demonstrate a simple logic function. The thickness of active layer is maintained within sub-7 nm range, encompassing both channels and contacts. The ultrathin transistor and interconnect stack developed here, characterized by a readily etchable interlayer and low parasitic resistance, leads to heterogeneous integration of future 3D integrated circuits (ICs).

Growth Anisotropy and Morphology Evolution of Line Defects in Monolayer MoS2 : Atomic-Level Observation, Large-Scale Statistics, and Mechanism Understanding

Understanding the growth behavior and morphology evolution of defects in 2D transition metal dichalcogenides is significant for the performance tuning of nanoelectronic devices. Here, the low-voltage aberration-corrected transmission electron microscopy with an in situ heating holder and a fast frame rate camera to investigate the sulfur vacancy lines in monolayer MoS2 is applied. Vacancy concentration-dependent growth anisotropy is discovered, displaying first lengthening and then broadening of line defects as the vacancy densifies. With the temperature increase from 20 °C to 800 °C, the defect morphology evolves from a dense triangular network to an ultralong linear structure due to the temperature-sensitive vacancy migration process. Atomistic dynamics of line defect reconstruction on the millisecond time scale are also captured. Density functional theory calculations, Monte Carlo simulation, and configurational force analysis are implemented to understand the growth and reconstruction mechanisms at relevant time and length scales. Throughout the work, high-resolution imaging is closely combined with quantitative analysis of images involving thousands of atoms so that the atomic-level structure and the large-area statistical rules are obtained simultaneously. The work provides new ideas for balancing the accuracy and universality of discoveries in the TEM study and will be helpful to the controlled sculpture of nanomaterials.

Liquid metal catalyzed chemical vapor deposition towards morphology engineering of 2D epitaxial heterostructures

The past decades have witnessed significant advancements in the growth of two-dimensional (2D) materials, offering a wide range of potential applications in the fields of electronics, optoelectronics, energy storage, sensors, catalysis, and biomedical treatments. Epitaxial heterostructures based on 2D materials, including vertical heterostructures, lateral structures, and superlattices, have emerged as novel material systems to manipulate the intrinsic properties and unlock new functionalities. Therefore, the development of controllable preparation methods for tailored epitaxial heterostructures serves as a fundamental basis for extensive property investigation and further application exploration. However, this pursuit presents formidable challenges due to the incomplete understanding of growth mechanisms and limited designable strategies. Chemical vapor deposition (CVD) is deemed as a promising and versatile platform for the controlled synthesis of 2D materials, especially with regard to achieving lattice matching, a critical factor in epitaxial growth. Consequently, CVD holds potential to overcome these hurdles. In this Feature Article, we present our recent breakthroughs in the controllable preparation of 2D epitaxial heterostructures using CVD. Our focus revolves around the processes of morphology engineering, interface engineering, size and density engineering, and striking the delicate balance between growth and etching. Using molten metals or alloys as primary catalysts, we have achieved remarkable control over the fabrication of graphene/hexagonal boron nitride (hBN) super-ordered arrays, enabled multistage etching of graphene/hBN heterostructures, and successfully realized the construction of graphene/MXene heterostructures. Furthermore, our research endeavors encompass both bottom-up and top-down fabrication methods, offering a novel perspective on the synthesis of 2D epitaxial heterostructures. The resulting products hold immense potential for enhancing the efficiency of critical reactions such as oxygen reduction, CO2 reduction, and hydrogen evolution reactions. By presenting our methodologies for obtaining 2D epitaxial heterostructures through CVD, we aspire to inspire fellow researchers in this field to devise more feasible and controllable fabrication techniques while also fostering the exploration of diverse heterostructure configurations. Together, these advancements will undoubtedly pave the way for further breakthroughs in atomic manufacturing and novel applications.

Rational design of anti-Kasha photoemission from a biazulene core embedded in an antiaromatic/aromatic hybrid

The violation of the Kasha photoemission rule in organic molecules has intrigued chemists since their discovery, being always of relevance given its connection with unique electronic properties of molecules. However, an understanding of the molecular structure-anti-Kasha property relationship in organic materials has not been well-established, possibly because of the few existing cases available, limiting their prospective exploration and ad hoc design. Here we introduce a novel strategy to design organic emitters from high excited states combining intramolecular J-coupling of anti-Kasha chromophores with the hindering of vibrationally-induced non-radiative decay channels by enforcing molecular rigidity. We apply our approach to the integration of two antiparallel azulene units bridged with one heptalene all inserted into a polycyclic conjugated hydrocarbon (PCH). With the help of quantum chemistry calculations, we identify a suitable PCH embedding structure and predict its anti-Kasha emission from the third high energy excited singlet state. Finally, steady fluorescence and transient absorption spectroscopy studies corroborate the photophysical properties in a recently synthesized chemical derivative with this pre-designed structure.

Synthesis of a Dicyclohepta[a,g]heptalene-Containing Polycyclic Conjugated Hydrocarbon and the Impact of Non-Alternant Topologies

Incorporating non-hexagonal rings into polycyclic conjugated hydrocarbons (PCHs) can significantly affect their electronic and optoelectronic properties and chemical reactivities. Here, we report the first bottom-up synthesis of a dicyclohepta[a,g]heptalene-embedded PCH (1) with four continuous heptagons, which are arranged in a "Z" shape. Compared with its structural isomer bischrysene 1 R with only hexagonal rings, compound 1 presents a distinct antiaromatic character, especially the inner heptalene core, which possesses clear antiaromatic nature. In addition, PCH 1 exhibits a narrower highest occupied molecular orbital (HOMO)-lowest unoccupied molecular orbital (LUMO) energy gap than its benzenoid contrast 1 R, as verified by experimental measurements and theoretical calculations. Our work reported herein not only provides a new way to synthesize novel PCHs with non-alternant topologies but also offers the possibility to tune their electronic and optical properties.

Substrate Engineering for CVD Growth of Single Crystal Graphene

Single crystal graphene (SCG) has attracted enormous attention for its unique potential for next-generation high-performance optoelectronics. In the absence of grain boundaries, the exceptional intrinsic properties of graphene are preserved by SCG. Currently, chemical vapor deposition (CVD) has been recognized as an effective method for the large-scale synthesis of graphene films. However, polycrystalline films are usually obtained and the present grain boundaries compromise the carrier mobility, thermal conductivity, optical properties, and mechanical properties. The scalable and controllable synthesis of SCG is challenging. Recently, much attention has been attracted by the engineering of large-size single-crystal substrates for the epitaxial CVD growth of large-area and high-quality SCG films. In this article, a comprehensive and comparative review is provided on the selection and preparation of various single-crystal substrates for CVD growth of SCG under different conditions. The growth mechanisms, current challenges, and future development and perspectives are discussed.

Growth and in situ characterization of 2D materials by chemical vapour deposition on liquid metal catalysts: a review

2D materials (2DMs) have now been established as unique and attractive alternatives to replace current technological materials in a number of applications. Chemical vapour deposition (CVD), is undoubtedly the most renowned technique for thin film synthesis and meets all requirements for automated large-scale production of 2DMs. Currently most CVD methods employ solid metal catalysts (SMCat) for the growth of 2DMs however their use has been found to induce structural defects such as wrinkles, fissures, and grain boundaries among others. On the other hand, liquid metal catalysts (LMCat), constitute a possible alternative for the production of defect-free 2DMs albeit with a small temperature penalty. This review is a comprehensive report of past attempts to employ LMCat for the production of 2DMs with emphasis on graphene growth. Special attention is paid to the underlying mechanisms that govern crystal growth and/or grain consolidation and film coverage. Finally, the advent of online metrology which is particularly effective for monitoring the chemical processes under LMCat conditions is also reviewed and certain directions for future development are drawn.

Recent Advances in Growth of Large-Sized 2D Single Crystals on Cu Substrates

Large-scale and high-quality 2D materials have been an emerging and promising choice for use in modern chemistry and physics owing to their fascinating property profile. The past few years have witnessed inspiringly progressing development in controlled fabrication of large-sized and single-crystal 2D materials. Among those production methods, chemical vapor deposition (CVD) has drawn the most attention because of its fine control over size and quality of 2D materials by modulating the growth conditions. Meanwhile, Cu has been widely accepted as the most popular catalyst due to its significant merit in growing monolayer 2D materials in the CVD process. Herein, very recent advances in preparing large-sized 2D single crystals on Cu substrates by CVD are presented. First, the unique features of Cu will be given in terms of ultralow precursor solubility and feasible surface engineering. Then, scaled growth of graphene and hexagonal boron nitride (h-BN) crystals on Cu substrates is demonstrated, wherein different kinds of Cu surfaces have been employed. Furthermore, the growth mechanism for the growth of 2D single crystals is exhibited, offering a guideline to elucidate the in-depth growth dynamics and kinetics. Finally, relevant issues for industrial-scale mass production of 2D single crystals are discussed and a promising future is expected.

Metamaterials for Enhanced Optical Responses and their Application to Active Control of Terahertz Waves

Metamaterials, artificially constructed structures that mimic lattices in natural materials, have made numerous contributions to the development of unconventional optical devices. With an increasing demand for more diverse functionalities, terahertz (THz) metamaterials are also expanding their domain, from the realm of mere passive devices to the broader area where functionalized active THz devices are particularly required. A brief review on THz metamaterials is given with a focus on research conducted in the authors' group. The first part is centered on enhanced THz optical responses from tightly coupled meta-atom structures, such as high refractive index, enhanced optical activity, anomalous wavelength scaling, large phase retardation, and nondispersive polarization rotation. Next, electrically gated graphene metamaterials are reviewed with an emphasis on the functionalization of enhanced THz optical responses. Finally, the linear frequency conversion of THz waves in a rapidly time-variant THz metamaterial is briefly discussed in the more general context of spatiotemporal control of light.

Prominent adsorption of Cr(VI) with graphene oxide aerogel twined with creeper-like polymer based on chitosan oligosaccharide

Low-density aerogels with three-dimensional porous structure were synthesized using soluble chitosan oligosaccharide (COS) and graphene oxide (GO) as raw materials under mild conditions. Tetraethylenepentamine was used as the crosslinker of COS and the bridge between GO and COS, as well as the provider of functional groups. Structural characterizations revealed that crosslinked COS polymers firmly fixed on the surfaces of GO sheets and abundant amino groups homogeneously distributed in the pores. The adsorption capacity of the aerogel for Cr(VI) can reach up to 519.8 mg/g, while the adsorption efficiency for trace Cr(VI) adsorption can also reach 100% especially. The adsorption mechanism was investigated with X-ray photoelectron spectroscopy and zeta potential analysis. The superb properties suggested that the strategy of using COS as a raw material for the fabrication of adsorbents with controllable structure and form is meaningful.

Growth of Single-Layer and Multilayer Graphene on Cu/Ni Alloy Substrates

ConspectusGraphene, a one-atom-thick layer of carbon with a honeycomb lattice, has drawn great attention due to its outstanding properties and its various applications in electronic and photonic devices. Mechanical exfoliation has been used for preparing graphene flakes (from monolayer to multilayer with thick pieces also typically present), but with sizes limited typically to less than millimeters, its usefulness is limited. Chemical vapor deposition (CVD) has been shown to be the most effective technique for the scalable preparation of graphene films with high quality and uniformity. To date, CVD growth of graphene on the most commonly used substrates (Cu and Ni foils) has been demonstrated and intensively studied. However, a survey of the existing literature and earlier work using Cu or Ni substrates for CVD growth indicates that the bilayer and multilayer graphene over a large area, particularly single crystals, have not been obtained.In this Account, we review current progress and development in the CVD growth of graphene and highlight the important challenges that need to be addressed, for example, how to achieve large single crystal graphene films with a controlled number of layers. A single-layer graphene film grown on polycrystalline Cu foil was first reported by our group, and since then various techniques have been devoted to achieving the fast growth of large-area graphene films with high quality. Commercially available Cu/Ni foils, sputtered Cu/Ni thin films, and polycrystalline Cu/Ni foils have been used for the CVD synthesis of bilayer, trilayer, and multilayer graphene. Cu/Ni alloy substrates are particularly interesting due to their greater carbon solubility than pure Cu substrates and this solubility can be finely controlled by changing the alloy composition. These substrates with controlled compositions have shown the potential for the growth of layer-tunable graphene films in addition to providing a much higher growth rate due to their stronger catalytic activity. However, the well-controlled preparation of single crystal graphene with a defined number of layers on Cu/Ni substrates is still challenging.Due to its small lattice mismatch with graphene, a single crystal Cu(111) foil has been shown to be an ideal substrate for the epitaxial growth of graphene. Our group has reported the synthesis of large-size single crystal Cu(111) foils by the contact-free annealing of commercial Cu foils, and single crystal Cu/Ni(111) alloy foils have also been obtained after the heat-treatment of Ni-coated Cu(111) foils. The use of these single crystal foils (especially the Cu/Ni alloy foils) as growth substrates has enabled the fast growth of single crystal single-layer graphene films. By increase of the Ni content, single crystal bilayer, trilayer, and even multilayer graphene films have been synthesized. In addition, we also discuss the wafer-scale growth of single-layer graphene on the single crystalline Cu/Ni(111) thin films.Recent research results on the large-scale preparation of single crystal graphene films with different numbers of layers on various types of Cu/Ni alloy substrates with different compositions are reviewed and discussed in detail. Despite the remarkable progress in this field, further challenges, such as the wafer-scale synthesis of single crystal graphene with a controlled number of layers and a deeper understanding of the growth mechanism of bilayer and multilayer graphene growth on Cu/Ni substrates, still need to be addressed.

Exploring Approaches for the Synthesis of Few-Layered Graphdiyne

Graphdiyne (GDY) is an emerging carbon allotrope in the graphyne (GY) family, demonstrating extensive potential applications in the fields of electronic devices, catalysis, electrochemical energy storage, and nonlinear optics. Synthesis of few-layered GDY is especially important for both electronic applications and structural characterization. This work critically summarizes the state-of-art of GDY and focuses on exploring approaches for few-layered GDY synthesis. The obstacles and challenges of GDY synthesis are also analyzed in detail. Recently developed synthetic methods are discussed such as i) the copper substrate-based method, ii) the chemical vapor deposition (CVD) method, iii) the interfacial construction method, and iv) the graphene-templated method. Throughout the discussion, the superiorities and limitations of different methods are analyzed comprehensively. These synthetic methods have provided considerable inspiration approaching synthesis of few-layered or single-layered GDY film. The work concludes with a perspective on promising research directions and remaining barriers for layer-controlled and morphology-controlled synthesis of GDY with higher crystalline quality.

Facile and Scalable Fabrication of Nitrogen-Doped Porous Carbon Nanosheets for Capacitive Energy Storage with Ultrahigh Energy Density

Porous carbon materials are the most commonly used electrode materials for supercapacitors because of their abundant structures, excellent conductivities, and chemical stability. However, the manufacture of carbon materials possessing sizable pores and remarkable wettability with the electrolyte remains challenging. Herein, we developed a facile and industrially scalable method for the production of nitrogen-doped porous carbon nanosheets (PNDC-4) with excellent pore size distribution, large specific surface area (>1200 m² g^-1), high conductivity (>700 S m^-1), and superb wettability either in aqueous or organic electrolyte. Particularly, PNDC-4 shows a high capacitance of 387 F g^-1 (1 A g^-1) in a three-electrode system with 3 M KOH and 80 F g^-1 (1 A g^-1) in a symmetric two-electrode system with EMIMBF₄. The device exhibits an ultrahigh energy density of 81 W h kg^-1 at a power density of 1.3 kW kg^-1 and can still maintain at 60.8 W h kg^-1 when the power density is increased to 266.6 kW kg^-1. Moreover, the devices show superb stability that 94% of its initial capacitance is still maintained after 100 000 cycles at 20 A g^-1.

Seed-Assisted Synthesis of Graphene Films on Insulating Substrate

Synthesizing graphene at a large-scale and of high quality on insulating substrate is a prerequisite for graphene applications in electronic devices. Typically, graphene is synthesized and then transferred to the proper substrate for subsequent device preparation. However, the complicated and skilled transfer process involves some issues such as wrinkles, residual contamination and breakage of graphene films, which will greatly degrade its performance. Direct synthesis of graphene on insulating substrates without a transfer process is highly desirable for device preparation. Here, we report a simple, transfer-free method to synthesize graphene directly on insulating substrates (SiO₂/Si, quartz) by using a Cu layer, graphene oxide and Poly (vinyl alcohol) as the catalyst, seeds and carbon sources, respectively. Atomic force microscope (AFM), scanning electronic microscope (SEM) and Raman spectroscopy are used to characterize the interface of insulating substrate and graphene. The graphene films directly grown on quartz glass can attain a high transmittance of 92.8% and a low sheet resistance of 620 Ω/square. The growth mechanism is also revealed. This approach provides a highly efficient method for the direct production of graphene on insulating substrates.

Controllable Growth of Graphene on Liquid Surfaces

Controllable fabrication of graphene is necessary for its practical application. Chemical vapor deposition (CVD) approaches based on solid metal substrates with morphology-rich surfaces, such as copper (Cu) and nickel (Ni), suffer from the drawbacks of inhomogeneous nucleation and uncontrollable carbon precipitation. Liquid substrates offer a quasiatomically smooth surface, which enables the growth of uniform graphene layers. The fast surface diffusion rates also lead to unique growth and etching kinetics for achieving graphene grains with novel morphologies. The rheological surface endows the graphene grains with self-adjusted rotation, alignment, and movement that are driven by specific interactions. The intermediary-free transfer or the direct growth of graphene on insulated substrates is demonstrated using liquid metals. Here, the controllable growth process of graphene on a liquid surface to promote the development of attractive liquid CVD strategies is in focus. The exciting progress in controlled growth, etching, self-assembly, and delivery of graphene on a liquid surface is presented and discussed in depth. In addition, prospects and further developments in these exciting fields of graphene growth on a liquid surface are discussed.

Toward Mass Production of CVD Graphene Films

Chemical vapor deposition (CVD) is considered to be an efficient method for fabricating large-area and high-quality graphene films due to its excellent controllability and scalability. Great efforts have been made to control the growth of graphene to achieve large domain sizes, uniform layers, fast growth, and low synthesis temperatures. Some attempts have been made by both the scientific community and startup companies to mass produce graphene films; however, there is a large difference in the quality of graphene synthesized on a laboratory scale and an industrial scale. Here, recent progress toward the mass production of CVD graphene films is summarized, including the manufacturing process, equipment, and critical process parameters. Moreover, the large-scale homogeneity of graphene films and fast characterization methods are also discussed, which are crucial for quality control in mass production.

Structural reconfiguration and stress relaxation in twisted epitaxial graphene by annealing

The possibility to engineer the van der Waals interactions between graphene layers is crucial for controlling the electronic properties. Using epitaxial graphene with preferential orientations grown on the C-face 6H-SiC as a prototype, we have addressed the annealed structural reconfiguration of graphene layer in view of the evolutions of surface ripples and relative rotation angle (RRA) between lattices. It was found that the heat treatment of graphene layers under vacuum deformed the arcuate ripple surface and subsequently split one ripple into parallel twin pleats, which drastically increased the strains in the films. The originally oriented graphene layers, with small RRA between adjacent layers, were rearranged by the annealing resulting in disordered orientations and larger RRA. After a sufficient annealing, the compressive stress stored in the films was well released to give undistorted graphene lattices. The vacuum annealing is an effective treatment for irreversibly relaxing the graphene structure.

Shape-controlled synthesis of porous carbons for flexible asymmetric supercapacitors

N-Doped carbon nanomaterials have gained tremendous research interest in energy storage because of their high capacitance and chemical stability. Here, N-doped porous carbons (NPCs) with multiple shape-controlled and tunable morphologies are developed through a direct one-step pyrolysis/activation method. Typically, NPC-700-1, which is 5 nm thick and 6 μm wide, shows a high surface area (1591.5 m2 g-1) and hierarchical micro-, meso-, and macroporous architecture. The maximum specific capacitance of the as-prepared carbon nanosheets is 406 F g-1 at 1 A g-1 in KOH electrolyte. Moreover, flexible all-solid-state asymmetric supercapacitor devices assembled from NPCs and NiCo2O4 deliver a superior energy density of 42.7 W h kg-1 at 794.6 W kg-1, and good cycling ability (94% after 10 000 cycles). All the results suggest that NPCs have great potential for high performance wearable electronics and energy storage devices.

Spatially resolved Raman spectroscopy of defects, strains, and strain fluctuations in domain structures of monolayer graphene

We report spatially resolved Raman scattering results of polycrystalline monolayer graphene films to study the effects of defects, strains, and strain fluctuations on the electrical performance of graphene. Two-dimensional Raman images of the integrated intensities of the G and D peaks (I_G and I_D) were used to identify the graphene domain boundaries. The domain boundaries were also identified using Raman images of I_D/I_G and I_2D/I_G ratios and 2D spectral widths. Interestingly, the I_D maps showed that the defects within individual domains significantly increased for the graphene with large domain size. The correlation analysis between the G and 2D peak energies showed that biaxial tensile strain was more developed in the graphene with large domain size than in the graphene with small domain size. Furthermore, spatial variations in the spectral widths of the 2D peaks over the graphene layer showed that strain fluctuations were more pronounced in the graphene with large domain size. It was observed that the mobility (sheet resistance) was decreased (increased) for the graphene with large domain size. The degradation of the electrical transport properties of the graphene with large domain size is mainly due to the defects, tensile strains, and local strain fluctuations within the individual domains.

Controlled Chemical Synthesis in CVD Graphene

Due to the unique properties of graphene, single layer, bilayer or even few layer graphene peeled off from bulk graphite cannot meet the need of practical applications. Large size graphene with quality comparable to mechanically exfoliated graphene has been synthesized by chemical vapor deposition (CVD). The main development and the key issues in controllable chemical vapor deposition of graphene has been briefly discussed in this chapter. Various strategies for graphene layer number and stacking control, large size single crystal graphene domains on copper, graphene direct growth on dielectric substrates, and doping of graphene have been demonstrated. The methods summarized here will provide guidance on how to synthesize other two-dimensional materials beyond graphene.

Ultrathin graphene nanosheets derived from rice husks for sustainable supercapacitor electrodes

Ultrathin graphene nanosheets were derived from rice husks via KOH activation and they showed excellent electrochemical performances.

Metal-catalyst-free growth of graphene on insulating substrates by ammonia-assisted microwave plasma-enhanced chemical vapor deposition

We study the metal-catalyst-free growth of uniform and continuous graphene on different insulating substrates by microwave plasma-enhanced chemical vapor deposition (PECVD) with a gas mixture of C₂H₂, NH₃, and H₂ at a temperature of 700–750 °C.

Highly efficient visible-light-driven plasmonic photocatalysts based on graphene oxide mediated hybridization of graphite and Ag/AgBr

Graphite (Gr) has been facilely hybridized with Ag/AgBr under the assistance of graphene oxide (GO). The as-produced Gr/GO/Ag/AgBr displays substantially boosted photocatalytic performances compared to Ag/AgBr, GO/Ag/AgBr, and Gr/Ag/AgBr.

Direct CVD Graphene Growth on Semiconductors and Dielectrics for Transfer-Free Device Fabrication

Graphene is the most broadly discussed and studied two-dimensional material because of its preeminent physical, mechanical, optical, and thermal properties. Until now, metal-catalyzed chemical vapor deposition (CVD) has been widely employed for the scalable production of high-quality graphene. However, in order to incorporate the graphene into electronic devices, a transfer process from metal substrates to targeted substrates is inevitable. This process usually results in contamination, wrinkling, and breakage of graphene samples - undesirable in graphene-based technology and not compatible with industrial production. Therefore, direct graphene growth on desired semiconductor and dielectric substrates is considered as an effective alternative. Over the past years, there have been intensive investigations to realize direct graphene growth using CVD methods without the catalytic role of metals. Owing to the low catalytic activity of non-metal substrates for carbon precursor decomposition and graphene growth, several strategies have been designed to facilitate and engineer graphene fabrication on semiconductors and insulators. Here, those developed strategies for direct CVD graphene growth on semiconductors and dielectrics for transfer-free fabrication of electronic devices are reviewed. By employing these methods, various graphene-related structures can be directly prepared on desired substrates and exhibit excellent performance, providing versatile routes for varied graphene-based materials fabrication.

Rapid Growth of Large Single-Crystalline Graphene via Second Passivation and Multistage Carbon Supply

A second passivation and a multistage carbon-source supply (CSS) allow a 50-fold enhancement of the growth rate of large single-crystalline graphene with a record growth rate of 101 μm min(-1) , almost 10 times higher than for pure copper. To this end the CSS is tailored at separate stages of graphene growth on copper foil, combined with an effective suppression of new spontaneous nucleation via second passivation.

Nitrogen-Doped Porous Carbon Superstructures Derived from Hierarchical Assembly of Polyimide Nanosheets

3D carbon superstructures are fabricated through the hierarchical assembly of polyimide nanosheets and thermal treatment. Benefiting from the ultrahigh surface area and the hierarchically porous structure, along with the well-distributed highly electroactive sites, the flower-like carbon material exhibits outstanding catalytic activity toward the oxygen reduction reaction and also serves as a highly stable electrode material in supercapacitors.

Highly energetic compositions based on functionalized carbon nanomaterials

In recent years, research in the field of carbon nanomaterials (CNMs), such as fullerenes, expanded graphite (EG), carbon nanotubes (CNTs), graphene, and graphene oxide (GO), has been widely used in energy storage, electronics, catalysts, and biomaterials, as well as medical applications. Regarding energy storage, one of the most important research directions is the development of CNMs as carriers of energetic components by coating or encapsulation, thus forming safer advanced nanostructures with better performances. Moreover, some CNMs can also be functionalized to become energetic additives. This review article covers updated preparation methods for the aforementioned CNMs, with a more specific orientation towards the use of these nanomaterials in energetic compositions. The effects of these functionalized CNMs on thermal decomposition, ignition, combustion and the reactivity properties of energetic compositions are significant and are discussed in detail. It has been shown that the use of functionalized CNMs in energetic compositions greatly improves their combustion performances, thermal stability and sensitivity. In particular, functionalized fullerenes, CNTs and GO are the most appropriate candidate components in nanothermites, solid propellants and gas generators, due to their superior catalytic properties as well as facile preparation methods.

A facile method for transparent carbon nanosheets heater based on polyimide

Transparent carbon nanosheet film heaters are fabricated by spin-coating of poly(amic acid) on quartz substrates following by carbonization process. These thin films show the transparency of 55–90% at 550 nm and sheet resistance of 14.7 to 1.6 kΩ sq⁻¹.