Magnetoelectric Coupling Induced by Interfacial Orbital Reconstruction

Tuning Rashba-Dresselhaus effect with ferroelectric polarization at asymmetric heterostructural interface

The spin-orbit interaction (SOI) plays an essential role in materials properties, and controlling its intensity has great potential in the design of materials. In this work, asymmetric [(La0.7Sr0.3MnO3)8/(BaTiO3)t/(SrTiO3)2]8 superlattices were fabricated on (001) SrTiO3 substrate with SrO or TiO2 termination, labelled as SrO-SL and TiO2-SL, respectively. The in-plane angular magnetoresistance of the superlattices shows a combination of two- and four-fold symmetry components. The coefficient of two-fold symmetry component has opposite sign with current I along [100] and [110] directions for TiO2-SL, while it has the same sign for SrO-SL. Detailed study shows that the asymmetric cation inter-mixing and ferroelectricity-modulated electronic charge transfer induce asymmetric electronic potential for SrO-SL with dominating Rashba SOI, and symmetric electronic potential for TiO2-SL with dominating Dresselhaus SOI induced by BaTiO3. This work shows that the Rashba and Dresselhaus SOIs are sensitive to the ferroelectric polarization in the asymmetric structure.

A comparative study of electrochemical and electrostatic doping modulation of magnetism in Fe3O4via ultracapacitor structure

Electric field control of magnetism can boost energy efficiency and have brought revolutionary breakthroughs in the development of widespread applications in spintronics. Electrolyte gating plays an important role in magnetism modulation. In this work, reversible room-temperature electric field control of saturation magnetization in Fe₃O₄via a supercapacitor structure is demonstrated with three types of traditional gate electrolytes for comparison. Different magnetization response and responsible mechanisms are revealed by Operando magnetometry PPMS/VSM and XPS characterization. The main mechanism in Na₂SO₄, KOH aqueous electrolytes is electrochemical effect, while both electrochemical and electrostatic effects were found in LiPF₆organic electrolyte. This work offers a kind of reference basis for selecting appropriate electrolyte in magnetism modulation by electrolyte-gating in the future, meanwhile, paves its way towards practical use in magneto-electric actuation, voltage-assisted magnetic storage, facilitating the development of high-performance spintronic devices.

Perpendicular Manganite Magnetic Tunnel Junctions Induced by Interfacial Coupling

The half-metallic manganite oxide La_2/3Sr_1/3MnO₃ (LSMO) has a very high spin polarization of ∼100%, making it ideal for ferromagnetic electrodes to realize tunneling magnetoresistance (TMR). Because of the in-plane magnetic anisotropy of the ferromagnetic LSMO electrode, which leads to the density limit of memory, realizing perpendicular tunneling in manganite-based magnetic tunnel junctions (MTJ) is critical for future applications. Here, we design and fabricate manganite-based MTJs composed of alternately stacked cobaltite and manganite layers that demonstrate strong perpendicular magnetic anisotropy (PMA) induced by interfacial coupling. Moreover, spin-dependent tunneling behaviors with an out-of-plane magnetic field were observed in the perpendicular MTJs. We found that the direct tunneling effect plays a dominant role in the low bias region during the transport behavior of devices, which is associated with thermionic emission of electrons or oxygen vacancies in the high bias region. Our works of realizing perpendicular tunneling in manganite-based MTJs lead to new approaches for designing and developing all-oxide spintronic devices.

Linearly shifting ferromagnetic resonance response of La0.7Sr0.3MnO3 thin film for body temperature sensors

Human body temperature not only reflects vital signs, but also affects the state of various organs through blood circulation, and even affects lifespan. Here a wireless body temperature detection scheme was presented that the temperature was extracted by investigating the out-of-plane (OP) ferromagnetic resonance (FMR) field of 10.2 nm thick La_0.7Sr_0.3MnO₃ (LSMO) film using electron paramagnetic resonance (EPR) technique. Within the range of 34-42 °C, the OP FMR field changes linearly with the increasing or decreasing temperature, and this variation comes from the linear responses of magnetization to the fluctuant temperature. Using this method, a tiny temperature change (< 0.1 °C) of organisms can be detected accurately and sensitively, which shows great potential in body temperature monitoring for humans and mammals.

Enhanced Tunneling Magnetoresistance Effect via Ferroelectric Control of Interface Electronic/Magnetic Reconstructions

Magnetic tunnel junctions (MTJs) with tunable tunneling magnetoresistances (TMR) have already been proven to have great potential for spintronics. Especially, when ferroelectric materials are used as insulating barriers, more novel functions of MTJs can be realized due to interface magnetoelectric coupling. Here, we demonstrate a very large ferroelectric modulation of TMR (as high as 570% in low-resistance state) in the ferroelectric/magnetic La_0.5Sr_0.5MnO₃/BaTiO₃ (LSMO/BTO) junctions and find robust interfacial electronic and magnetic reconstructions via ferroelectric polarization switching. Through electrical, magnetic, and optical measurements combined with X-ray absorption and magnetic circular dichroism, we reveal that the interfacial electronic and magnetic (ferromagnetic/antiferromagnetic phase transition) reconstructions originate from strong electromagnetic coupling between BTO and LSMO at the interface and are driven by the modulation of hole/electron doping at the interface of LSMO/BTO through ferroelectric polarization switching. As a result, the ferroelectrically controlled interface barrier height and width and spin filter effect enable a giant electrical modulation of TMR. Our results shed new light on the intrinsic mechanisms governing magnetoelectric coupling and offering a new route to enhance magnetoelectric coupling for spin control in spintronic devices.

Ferroelectric Self-Polarization Controlled Magnetic Stratification and Magnetic Coupling in Ultrathin La0.67Sr0.33MnO3 Films

Multiferroic oxide heterostructures consisting of ferromagnetic and ferroelectric components hold the promise for nonvolatile magnetic control via ferroelectric polarization, advantageous for the low-dissipation spintronics. Modern understanding of the magnetoelectric coupling in these systems involves structural, orbital, and magnetic reconstructions at interfaces. Previous works have long proposed polarization-dependent interfacial magnetic structures; however, direct evidence is still missing, which requires advanced characterization tools with near-atomic-scale spatial resolutions. Here, extensive polarized neutron reflectometry (PNR) studies have determined the magnetic depth profiles of PbZr_0.2Ti_0.8O₃/La_0.67Sr_0.33MnO₃ (PZT/LSMO) bilayers with opposite self-polarizations. When the LSMO is 2-3 nm thick, the bilayers show two magnetic transitions on cooling. However, temperature-dependent magnetization is different below the lower-temperature transition for opposite polarizations. PNR finds that the LSMO splits into two magnetic sublayers, but the inter-sublayer magnetic couplings are of opposite signs for the two polarizations. Near-edge X-ray absorption spectroscopy further shows contrasts in both the Mn valences and the Mn-O bond anisotropy between the two polarizations. This work completes the puzzle for the magnetoelectric coupling model at the PZT/LSMO interface, showing a synergic interplay among multiple degrees of freedom toward emergent functionalities at complex oxide interfaces.

Magnetism manipulated by ferroelectric polarization and epitaxial strain in a La0.75Sr0.25MnO3/BaTiO3 system

Exploring the manipulation of magnetism in perovskite oxides is scientifically interesting and of great technical importance in next-generation magnetic memory. Dual control of magnetism in superlattices through epitaxial strain and ferroelectric polarization may induce rich physical properties. In this work, we demonstrated a strong magnetoelectric coupling that appears in an La0.75Sr0.25MnO3/BaTiO3 superlattice. Reversible transitions in ferromagnetism, ferrimagnetism and anti-ferromagnetism, with strong magnetoelectric coupling, are achieved by precisely controlling the magnitude and spin-direction of the magnetic moments of Mn. Half-metallicity is demonstrated in the MnO2 layers, accompanied by the spin polarization of the superlattice varying from 100% to 0%. We realize the coexistence of ferroelectric polarization and metallicity, i.e., "ferroelectric metal". The variation in strain and re-orientation of polarization lead to a change in interfacial Ti-O and Mn-O bond lengths, and hence a hybridization state, determining the magnetism of our system. The purpose-designed LSMO/BTO superlattice with intrinsic magnetoelectric coupling is a particularly interesting model system that can provide guidance for the development of spintronic devices.

Modulating Magnetism in Ferroelectric Polymer-Gated Perovskite Manganite Films with Moderate Gate Pulse Chains

Most previous attempts on achieving electric-field manipulation of ferromagnetism in complex oxides, such as La_0.66Sr_0.33MnO₃ (LSMO), are based on electrostatically induced charge carrier changes through high-k dielectrics or ferroelectrics. Here, the use of a ferroelectric copolymer, polyvinylidene fluoride with trifluoroethylene [P(VDF-TrFE)], as a gate dielectric to successfully modulate the ferromagnetism of the LSMO thin film in a field-effect device geometry is demonstrated. Specifically, through the application of low-voltage pulse chains inadequate to switch the electric dipoles of the copolymer, enhanced tunability of the oxide magnetic response is obtained, compared to that induced by ferroelectric polarization. Such observations have been attributed to electric field-induced oxygen vacancy accumulation/depletion in the LSMO layer upon the application of pulse chains, which is supported by surface-sensitive-characterization techniques, including X-ray photoelectron spectroscopy and X-ray magnetic circular dichroism. These techniques not only unveil the electrochemical nature of the mechanism but also establish a direct correlation between the oxygen vacancies created and subsequent changes to the valence states of Mn ions in LSMO. These demonstrations based on the pulsing strategy can be a viable route equally applicable to other functional oxides for the construction of electric field-controlled magnetic devices.

Electric control of magnetization in an amorphous Co-Fe-Ta-B-O film by resistive switching

Electric control of magnetism by resistive switching is a simple and efficient approach to manipulate magnetism. However, the mechanism of magnetism manipulation by resistive switching is not well understood. Detailed characterization was performed to investigate the mechanism of magnetization changes with resistance state. We achieved a reversible and nonvolatile control of magnetization in a Co-Fe-Ta-B-O film at room temperature by resistive switching. It is found that a higher saturation magnetization could be attributed to the formation of a conducting filament rich in the reductive state of iron when the device is switched to low resistance. This work might provide a new insight to achieve magnetoelectric coupling.

Interfacial Control of Ferromagnetism in Ultrathin SrRuO3 Films Sandwiched between Ferroelectric BaTiO3 Layers

Interfaces between materials provide an intellectually rich arena for fundamental scientific discovery and device design. However, the frustration of magnetization and conductivity of perovskite oxide films under reduced dimensionality is detrimental to their device performance, preventing their active low-dimensional application. Herein, by inserting the ultrathin 4d ferromagnetic SrRuO₃ layer between ferroelectric BaTiO₃ layers to form a sandwich heterostructure, we observe enhanced physical properties in ultrathin SrRuO₃ films, including longitudinal conductivity, Curie temperature, and saturated magnetic moment. Especially, the saturated magnetization can be enhanced to ∼3.12 μ_B/Ru in ultrathin BaTiO₃/SrRuO₃/BaTiO₃ trilayers, which is beyond the theoretical limit of bulk value (2 μ_B/Ru). This observation is attributed to the synergistic ferroelectric proximity effect (SFPE) at upper and lower BaTiO₃/SrRuO₃ heterointerfaces, as revealed by the high-resolution lattice structure analysis. This SFPE in dual-ferroelectric interface cooperatively induces ferroelectric-like lattice distortions in RuO₆ oxygen octahedra and subsequent spin-state crossover in SrRuO₃, which in turn accounts for the observed enhanced magnetization. Besides the fundamental significance of interface-induced spin-lattice coupling, our findings also provide a viable route to the electrical control of magnetic ordering, taking a step toward low-power applications in all-oxide spintronics.

Enhanced Magnetoelectric Coupling in BaTiO3-BiFeO3 Multilayers-An Interface Effect

Combining various (multi-)ferroic materials into heterostructures is a promising route to enhance their inherent properties, such as the magnetoelectric coupling in BiFeO3 thin films. We have previously reported on the up-to-tenfold increase of the magnetoelectric voltage coefficient α ME in BaTiO3-BiFeO3 multilayers relative to BiFeO3 single layers. Unraveling the origin and mechanism of this enhanced effect is a prerequisite to designing new materials for the application of magnetoelectric devices. By careful variations in the multilayer design we now present an evaluation of the influences of the BaTiO3-BiFeO3 thickness ratio, oxygen pressure during deposition, and double layer thickness. Our findings suggest an interface driven effect at the core of the magnetoelectric coupling effect in our multilayers superimposed on the inherent magnetoelectric coupling of BiFeO3 thin films, which leads to a giant α ME coefficient of 480 V c m -1 Oe-1 for a 16 × (BaTiO3-BiFeO3) superlattice with a 4 . 8 nm double layer periodicity.

Polarization Control of the Interface Ferromagnetic to Antiferromagnetic Phase Transition in Co/Pb(Zr,Ti)O3

Based on first-principles calculations, we predict the polarization control of the interfacial magnetic phase and a giant electronically driven magnetoelectric coupling (MEC) in Co/PbZr_0.25Ti_0.75O₃ (PZT)(001). The effect of Co oxidation at the interface shared with (Zr,Ti)O₂-terminated PZT is evidenced. The magnetic phase of the oxidized Co interface layer is electrically switched from the ferromagnetic to the antiferromagnetic state by reversing the PZT polarization from upward to downward, respectively. A comparative study between oxidized and unoxidized Co/PZT interfaces shows that in oxidized Co/PZT bilayers, the variation of the interface spin moment upon polarization reversal exceeds that of unoxidized Co/PZT bilayers by about 1 order of magnitude. We define a surface MEC constant α_S taking into account the polarization dependence of both the spin and orbital moments. In unoxidized Co/PZT bilayers, we obtain α_S ≈ 2 × 10^-10 G cm² V^-1, while a giant surface coupling α_S ≈ 12 × 10^-10 G cm² V^-1 is found in the case of oxidized Co/PZT. We demonstrate that the polarization control of the magnetocrystalline anisotropy via spin-orbit coupling is not only effective at the interface but it extends to the Co film despite the interface origin of the MEC. This study shows that tailoring the nature of atomic bonding and electron occupancies allows for improving the performance of functional interfaces, enabling an efficient electric field control of spin-orbit interactions. Moreover, the nonlocal character of this effect holds promising perspectives for the application of electronically driven interface MEC in spin-orbitronic devices.

Oxygen-Valve Formed in Cobaltite-Based Heterostructures by Ionic Liquid and Ferroelectric Dual-Gating

Manipulation of oxygen vacancies via electric-field-controlled ionic liquid gating has been reported in many model systems within the emergent fields of oxide electronics and iontronics. It is then significant to investigate the oxygen vacancy formation/annihilation and migration across an additional ferroelectric layer with ionic liquid gating. Here, we report that via a combination of ionic liquid and ferroelectric gating, the remote control of oxygen vacancies and magnetic phase transition can be achieved in SrCoO_2.5 films capped with an ultrathin ferroelectric BaTiO₃ layer at room temperature. The ultrathin BaTiO₃ layer acts as an atomic oxygen valve and is semitransparent to oxygen-ion transport due to the competing interaction between vertical electron tunneling and ferroelectric polarization plus surface electrochemical changes in itself, thus resulting in the striking emergence of new mixed-phase SrCoO _x. The lateral coexistence of brownmillerite phase SrCoO_2.5 and perovskite phase SrCoO_3-δ was directly observed by transmission electron microscopy. Besides the fundamental significance of long-range interaction in ionic liquid gating, the ability to control the flow of oxygen ions across the heterointerface by the oxygen valve provides a new approach on the atomic scale for designing multistate memories, sensors, and solid-oxide fuel cells.

Atomic-Scale Control of Magnetism at the Titanite-Manganite Interfaces

Complex oxide thin-film heterostructures often exhibit magnetic properties different from those known for bulk constituents. This is due to the altered local structural and electronic environment at the interfaces, which affects the exchange coupling and magnetic ordering. The emergent magnetism at oxide interfaces can be controlled by ferroelectric polarization and has a strong effect on spin-dependent transport properties of oxide heterostructures, including magnetic and ferroelectric tunnel junctions. Here, using prototype La_2/3Sr_1/3MnO₃/BaTiO₃ heterostructures, we demonstrate that ferroelectric polarization of BaTiO₃ controls the orbital hybridization and magnetism at heterointerfaces. We observe changes in the enhanced orbital occupancy and significant charge redistribution across the heterointerfaces, affecting the spin and orbital magnetic moments of the interfacial Mn and Ti atoms. Importantly, we find that the exchange coupling between Mn and Ti atoms across the interface is tuned by ferroelectric polarization from ferromagnetic to antiferromagnetic. Our findings provide a viable route to electrically control complex magnetic configurations at artificial multiferroic interfaces, taking a step toward low-power spintronics.

Robust manipulation of magnetism in LaAO3/BaTiO3 (A = Fe, Mn and Cr) superstructures by ferroelectric polarization

Robust control of magnetism is both fundamentally and practically meaningful and highly desirable, although it remains a big challenge. In this work, perovskite oxide superstructures LaFeO3/BaTiO3 (LFO/BTO), LaMnO3/BaTiO3 (LMO/BTO) and LaCrO3/BaTiO3 (LCO/BTO) (001) are designed to facilitate tuning of magnetism by the electric field from ferroelectric polarization, and are systemically investigated via first-principles calculations. The results show that the magnetic ordering, conductivity and exchange interactions can be controlled simultaneously or individually by the reorientation of the ferroelectric polarization of BTO in these designed superstructures. Self-consistent calculations within the generalized gradient approximation plus on-site Coulomb correction did not produce distinct rotations of oxygen octahedra, but there were obvious changes in bond length between oxygen and the cations. These changes cause tilting of the oxygen octahedra and lead to spin, orbital and bond reconstruction at the interface, which is the structural basis responsible for the manipulation. With the G-type antiferromagnetic (G-AFM) ordering unchanged for both ±P cases, a metal-insulator transition can be observed in the LFO/BTO superstructure, which is controlled by the LFO thin film. The LMO/BTO system has A-type antiferromagnetic (A-AFM) ordering with metallic behavior in the +P case, while it shifts to a half-metallic ferromagnetic ordering when the direction of the polarization is switched. LCO/BTO exhibits C-type antiferromagnetic (C-AFM) and G-AFM orders in the +P and -P cases, respectively. The three purpose-designed superstructures with robust intrinsic magnetoelectric coupling are a particularly interesting model system that can provide guidance for the development of this field for future applications.

Charge screening-controlled Verwey phase transition in Fe3O4/SrTiO3 heterostructure

Despite intensive investigations into the Verwey phase transition of Fe₃O₄ over half a century, the mechanism of this phase transition remains controversial and needs further research. In this work, we build the Fe₃O₄/SrTiO₃ multiferroic heterostructure and investigate the temperature dependence of its saturation magnetization under various electric fields. It is found that the charge-screening effect not only influences the magnetization but also induces the temperature of the Verwey phase transition shifting ~13 K. It suggests that the Verwey phase transition has certain correlations with the electron distribution and the change of the number of minority spin electrons in the trimerons plays a dominant role in the temperature shift of the phase transition.

Origin of abnormal structural transformation in a (BiPb)FeO3/SrRuO3/SrTiO3 hetero-structure probed by Rutherford backscattering

Scientific efforts are growing to understand artificial BiFeO₃/SrRuO₃/SrTiO₃-heterostructures, wherein an altered environment at each interface, caused by epitaxial strains, broken symmetry, off-stoichiometry and charge transfer, can generate a rich spectrum of exotic properties. Herein, (BiPb)FeO₃/SrRuO₃/SrTiO₃-heterostructures were sputtered with various top (BiPb)FeO₃-layers at different growth temperatures (T_g). Strain relaxation at each interface changes with T_g and generates an additional peak alongside with (BiPb)FeO₃ at a high T_g of 700 °C. Rutherford backscattering (RBS) was employed to understand this unusual behavior as to whether it is a mixture of two phases, layer splitting or inter-diffusion of elements. Surprisingly, complete overlapping of random and aligned RBS spectra from the sample with T_g = 700 °C indicates the presence of a large amount of defects/distortions at the interfaces. The RBS compositional analysis gives clear evidence of Fe and Ru vacancies to an extent that the structural integrity may not be maintained. This abnormal condition can be explained by the inter-diffusion of Pb and Bi elements into whole films and even into the top layer of the SrTiO₃ substrate, which compensates for these vacancies by substitutional replacement and is responsible for the generation of the additional SrTi(BiPb)O₃—peak. Below T_c^SrRuO₃, the magnetic properties change significantly with T_g.

Multiple magnetoelectric coupling effect in BaTiO3/Sr2CoMoO6 heterostructures

Due to the demand of controlling magnetism by electric fields for future storage devices, materials with magnetoelectric coupling are of great interests. Based on first-principles calculations, we study the electronic and magnetic properties of a double perovskite Sr₂CoMoO₆ (SCMO) in a hybrid heterostructure combined with BaTiO₃ (BTO) in different polarization states. The calculations show that by introducing ferroelectric state in BTO, SCMO transforms from an antiferromagnetic semiconductor to a half-metal. Specially, altering the polarization direction not only controls the interfacial magnetic moment, but also changes the orbital occupancy of the Co-3d state. This novel multiple magnetoelectric coupling opens possibilities for designing new type of spintronic and microelectronic devices with controllable degree of freedom of interfacial electrons in the heterostructures.

Ultra-large non-volatile modulation of magnetic moments in PbZr0.2Ti0.8O3/MgO/La0.7Sr0.3MnO3 heterostructure at room temperature via interfacial polarization mediation

Multiferroic hybrid structures PbZr0.2Ti0.8O3 (PZT)/La0.7Sr0.3MnO3 (LSMO) and PZT/MgO/LSMO were epitaxially deposited on (001) Nb:SrTiO3 crystals. Crystallinity and ferroelectric domain structures were investigated for the PZT/LSMO heterostructure. Interestingly, relatively high non-volatile magnetoelectric coupling effects were observed in both heterostructures at room temperature. The change of chemical valence for Mn and Ti at the PZT/MgO/LSMO interface may play a dominant role rather than external strain or orbital reconstruction, which lead to a large modulation of the magnetization. Correspondingly, the transport behavior of the PZT/MgO/LSMO heterostructure is investigated to confirm the role of oxygen vacancies motion. Our result indicates that the PZT/MgO/LSMO heterostructure have a promising application for future high-density non-volatile memories.

Perpendicular Magnetic Anisotropy Preserved by Orbital Oscillation in Strained Tetragonal Fe4N/BiFeO3 Bilayers

Orbital performances are important for inducing and manipulating the perpendicular magnetic anisotropy (PMA) in spintronic devices. Herewith, the orbital-mediated PMA in highly spin-polarized Fe₄N are investigated in strained tetragonal Fe₄N/BiFeO₃(001) heterostructures with the Fe_AFe_B/Fe-O₂ termination using the first-principles calculations. Different from the d₂ = d_xz + d_yz + d_z² favored PMA in previously reported Fe film, for all the Fe₄N atomic layers at the biaxial strain of S, all d orbitals (i.e., d₁ = d_xy + d_x²-y² and d₂) make contributions to the PMA at S = 0% and in-plane magnetic anisotropy (IMA) at S = -2 and 2%. Specifically, the d₁-d₂ orbital oscillation preserves (or favors) the PMA in 0% strained Fe₄N, where the stronger MAE contribution alternates between d₁ and d₂ in adjacent Fe₄N layers. However, at S = -2 and 2%, the whole Fe₄N shows IMA with stable d₁ and d₂ contributions. Moreover, the PMA in the unstrained Fe₄N can be transformed into the IMA by a strain of -2% with a high spin polarization, where Fe₄N/BiFeO₃ interfacial effects are crucial. The PMA preserved by the controllably orbital oscillation in highly spin-polarized Fe₄N paves a way for developing novel spintronic devices.

Interfacial Control of Ferromagnetism in Ultrathin La0.67Ca0.33MnO3 Sandwiched between CaRu1-xTixO3 (x = 0-0.8) Epilayers

Controlling functionalities in oxide heterostructures remains challenging for the rather complex interfacial interactions. Here, by modifying the interface properties with chemical doping, we achieve a nontrivial control over the ferromagnetism in ultrathin La_0.67Ca_0.33MnO₃ (LCMO) layer sandwiched between CaRu_1-xTi_xO₃ [CRTO(x)] epilayers. The Ti doping suppresses the interfacial electron transfer from CRTO(x) to LCMO side; as a result, a steadily decreased Curie temperature with increasing x, from 262 K at x = 0 to 186 K at x = 0.8, is observed for the structures with LCMO fixed at 3.2 nm. Moreover, for more insulating CRTO(x ≥ 0.5), the electron confinement induces an interfacial Mn-e_g(x²-y²) orbital order in LCMO which further attenuates the ferromagnetism. Also, in order to characterize the heterointerfaces, for the first time the doping- and thickness-dependent metal-insulator transitions in CRTO(x) films are examined. Our results demonstrate that the LCMO/CRTO(x) heterostructure could be a model system for investigating the interfacial multiple interactions in correlated oxides.

Unravelling and controlling hidden imprint fields in ferroelectric capacitors

Ferroelectric materials have a spontaneous polarization that can point along energetically equivalent, opposite directions. However, when ferroelectric layers are sandwiched between different metallic electrodes, asymmetric electrostatic boundary conditions may induce the appearance of an electric field (imprint field, E_imp) that breaks the degeneracy of the polarization directions, favouring one of them. This has dramatic consequences on functionality of ferroelectric-based devices such as ferroelectric memories or photodetectors. Therefore, to cancel out the E_imp, ferroelectric components are commonly built using symmetric contact configuration. Indeed, in this symmetric contact configuration, when measurements are done under time-varying electric fields of relatively low frequency, an archetypical symmetric single-step switching process is observed, indicating E_imp ≈ 0. However, we report here on the discovery that when measurements are performed at high frequency, a well-defined double-step switching is observed, indicating the presence of E_imp. We argue that this frequency dependence originates from short-living head-to-head or tail-to-tail ferroelectric capacitors in the device. We demonstrate that we can modulate E_imp and the life-time of head-to-head or tail-to-tail polarization configurations by adjusting the polarization screening charges by suitable illumination. These findings are of relevance to understand the effects of internal electric fields on pivotal ferroelectric properties, such as memory retention and photoresponse.

Interface Magnetoelectric Coupling in Co/Pb(Zr,Ti)O3

Magnetoelectric coupling at multiferroic interfaces is a promising route toward the nonvolatile electric-field control of magnetization. Here, we use optical measurements to study the static and dynamic variations of the interface magnetization induced by an electric field in Co/PbZr0.2Ti0.8O3 (Co/PZT) bilayers at room temperature. The measurements allow us to identify different coupling mechanisms. We further investigate the local electronic and magnetic structure of the interface by means of transmission electron microscopy, soft X-ray magnetic circular dichroism, and density functional theory to corroborate the coupling mechanism. The measurements demonstrate a mixed linear and quadratic optical response to the electric field, which results from a magneto-electro-optical effect. We propose a decomposition method of the optical signal to discriminate between different components involved in the electric field-induced polarization rotation of the reflected light. This allows us to extract a signal that we can ascribe to interface magnetoelectric coupling. The associated surface magnetization exhibits a clear hysteretic variation of odd symmetry with respect to the electric field and nonzero remanence. The interface coupling is remarkably stable over a wide frequency range (1-50 kHz), and the application of a bias magnetic field is not necessary for the coupling to occur. These results show the potential of exploiting interface coupling with the prospect of optimizing the performance of magnetoelectric memory devices in terms of stability, as well as fast and dissipationless operation.

Strain-induced magnetic domain wall control by voltage in hybrid piezoelectric BaTiO3 ferrimagnetic TbFe structures

This paper reports on the voltage dependence of the magnetization reversal of a thin amorphous ferromagnetic TbFe film grown on a ferroelectric and piezoelectric BaTiO₃ single crystal. Magneto-optical measurements, at macroscopic scale or in a microscope, demonstrate how the ferroelectric BaTiO₃ polarisation history influences the properties of the perpendicularly magnetized TbFe film. Unpolarised and twinned regions are obtained when the sample is zero voltage cooled whereas flat and saturated regions are obtained when the sample is voltage cooled through the ferroelectric ordering temperature of the BaTiO₃ crystal, as supported by atomic force microscopy experiments. The two steps involved in the TbFe magnetization reversal, namely nucleation and propagation of magnetic domain walls, depend on the polarisation history. Nucleation is associated to coupling through strains with the piezoelectric BaTiO3 crystal and propagation to pinning with the ferroelastic surface patterns visible in the BaTiO3 topography.

Tailoring the multiferroic behavior in BiFeO3 nanostructures by Pb doping

Substituting Pb²⁺ for Bi³⁺ in BiFeO₃ can induce lattice distortions and structural transitions to tune the lone-pair activity for ferroelectricity and neutralized oxygen vacancies to valence Fe²⁺/Fe³⁺ ions for ferromagnetism.

Tilt engineering of exchange coupling at G-type SrMnO3/(La,Sr)MnO3 interfaces

With the recent realization of hybrid improper ferroelectricity and room-temperature multiferroic by tilt engineering, "functional" octahedral tilting has become a novel concept in multifunctional perovskite oxides, showing great potential for property manipulation and device design. However, the control of magnetism by octahedral tilting has remained a challenging issue. Here a qualitative and quantitative tilt engineering of exchange coupling, one of the magnetic properties, is demonstrated at compensated G-type antiferromagnetic/ferromagnetic (SrMnO3/La2/3Sr1/3MnO3) interfaces. According to interfacial Hamiltonian, exchange bias (EB) in this system originates from an in-plane antiphase rotation (a(-)) in G-type antiferromagnetic layer. Based on first-principles calculation, tilt patterns in SrMnO3 are artificially designed in experiment with different epitaxial strain and a much stronger EB is attained in the tensile heterostructure than the compressive counterpart. By controlling the magnitude of octahedral tilting, the manipulation of exchange coupling is even performed in a quantitative manner, as expected in the theoretical estimation. This work realized the combination of tilt engineering and exchange coupling, which might be significant for the development of multifunctional materials and antiferromagnetic spintronics.