Surface Monocrystallization of Copper Foil for Fast Growth of Large Single-Crystal Graphene under Free Molecular Flow

Prestrain Guided Yield of Large Single-Crystal Nickel Foils with High-Index Facets

Single-crystal metal foils with high-index facets are currently being investigated owing to their potential application in the epitaxial growth of high-quality van der Waals film materials, electrochemical catalysis, gas sensing, and other fields. However, the controllable synthesis of large single-crystal metal foils with high-index facets remains a great challenge because high-index facets with high surface energy are not preferentially formed thermodynamically and kinetically. Herein, single-crystal nickel foils with a series of high-index facets are efficiently prepared by applying prestrain energy engineering technique, with the largest single-crystal foil exceeding 5×8 cm2 in size. In terms of thermodynamics, the internal mechanism of prestrain regulation on the formation of high-index facets is proposed. Molecular dynamics simulation is utilized to replicate and explain the phenomenon of multiple crystallographic orientations resulting from prestrain regulation. Additionally, large-sized and high-quality graphite films are successfully fabricated on single-crystal Ni(012) foils. Compared to the polycrystalline nickel, the graphite/single-crystal Ni(012) foil composites show more than five-fold increase in thermal conductivity, thereby showing great potential applications in thermal management. This study hence presents a novel approach for the preparation of single-crystal nickel foils with high-index facets, which is beneficial for the epitaxial growth of certain two-dimensional materials.

Large-Area Flexible Carbon Nanofilms with Synergistically Enhanced Transmittance and Conductivity Prepared by Reorganizing Single-Walled Carbon Nanotube Networks

Large-area flexible transparent conductive films (TCFs) are highly desired for future electronic devices. Nanocarbon TCFs are one of the most promising candidates, but some of their properties are mutually restricted. Here, a novel carbon nanotube network reorganization (CNNR) strategy, that is, the facet-driven CNNR (FD-CNNR) technique, is presented to overcome this intractable contradiction. The FD-CNNR technique introduces an interaction between single-walled carbon nanotube (SWNT) and Cu─-O. Based on the unique FD-CNNR mechanism, large-area flexible reorganized carbon nanofilms (RNC-TCFs) are designed and fabricated with A3-size and even meter-length, including reorganized SWNT (RSWNT) films and graphene and RSWNT (G-RSWNT) hybrid films. Synergistic improvement in strength, transmittance, and conductivity of flexible RNC-TCFs is achieved. The G-RSWNT TCF shows sheet resistance as low as 69 Ω sq-1 at 86% transmittance, FOM value of 35, and Young's modulus of ≈45 MPa. The high strength enables RNC-TCFs to be freestanding on water and easily transferred to any target substrate without contamination. A4-size flexible smart window is fabricated, which manifests controllable dimming and fog removal. The FD-CNNR technique can be extended to large-area or even large-scale fabrication of TCFs and can provide new insights into the design of TCFs and other functional films.

Wafer scale growth of single crystal two-dimensional van der Waals materials

Two-dimensional (2D) van der Waals (vdW) materials, including graphene, hexagonal boron nitride (hBN), and metal dichalcogenides (MCs), form the basis of modern electronics and optoelectronics due to their unique electronic structure, chemical activity, and mechanical strength. Despite many proof-of-concept demonstrations so far, to fully realize their large-scale practical applications, especially in devices, wafer-scale single crystal atomically thin highly uniform films are indispensable. In this minireview, we present an overview on the strategies and highlight recent significant advances toward the synthesis of wafer-scale single crystal graphene, hBN, and MC 2D thin films. Currently, there are five distinct routes to synthesize wafer-scale single crystal 2D vdW thin films: (i) nucleation-controlled growth by suppressing the nucleation density, (ii) unidirectional alignment of multiple epitaxial nuclei and their seamless coalescence, (iii) self-collimation of randomly oriented grains on a molten metal, (iv) surface diffusion and epitaxial self-planarization and (v) seed-mediated 2D vertical epitaxy. Finally, the challenges that need to be addressed in future studies have also been described.

Precise Construction and Growth of Submillimeter Two-Dimensional WSe2 and MoSe2 Monolayers

Currently, as shown by large-scale research on two-dimensional materials in the field of nanoelectronics and catalysis, the construction of large-area two-dimensional materials is crucial for the development of devices and their application in photovoltaics, sensing, optoelectronics, and energy generation/storage. Here, using atmospheric-pressure chemical vapor deposition, we developed a method to regulate growth conditions according to the growth mechanism for WSe₂ and MoSe₂ materials. By accurately controlling the hydrogen flux within the range of 1 sccm and the distance between the precursor and the substrate, we obtained large-size films of single atomic layers with thicknesses of only about 1 nm. When growing the samples, we could not only obtain a 100 percent proportion of samples with the same shape, but the samples could also be glued into pieces of 700 μm and above in size, changing the shape and making it possible to reach the millimeter/submillimeter level visible to the naked eye. Our method is an effective method for the growth of large-area films with universal applicability.

Oxidization-Temperature-Triggered Rapid Preparation of Large-Area Single-Crystal Cu(111) Foil

The controlled preparation of single-crystal Cu(111) is intensively investigated owing to the superior properties of Cu(111) and its advantages in synthesizing high-quality 2D materials, especially graphene. However, the accessibility of large-area single-crystal Cu(111) is still hindered by time-consuming, complicated, and high-cost preparation methods. Here, the oxidization-temperature-triggered rapid preparation of large-area single-crystal Cu(111) in which an area up to 320 cm² is prepared within 60 min, and where low-temperature oxidization of polycrystalline Cu foil surface plays a vital role, is reported. A mechanism is proposed, by which the thin Cu_x O layer transforms to a Cu(111) seed layer on the surface of Cu to induce the formation of a large-area Cu(111) foil, which is supported by both experimental data and molecular dynamics simulation results. In addition, a large-size high-quality graphene film is synthesized on the single-crystal Cu(111) foil surface and the graphene/Cu(111) composites exhibit enhanced thermal conductivity and ductility compared to their polycrystalline counterpart. This work, therefore, not only provides a new avenue toward the monocrystallinity of Cu with specific planes but also contributes to improving the mass production of high-quality 2D materials.

Grain Size Engineering of CVD-Grown Large-Area Graphene Films

Graphene, a single atomic layer of graphitic carbon, has attracted much attention because of its outstanding properties hold great promise for a wide range of technological applications. Large-area graphene films (GFs) grown by chemical vapor deposition (CVD) are highly desirable for both investigating their intrinsic properties and realizing their practical applications. However, the presence of grain boundaries (GBs) has significant impacts on their properties and related applications. According to the different grain sizes, GFs can be divided into polycrystalline, single-crystal, and nanocrystalline films. In the past decade, considerable progress has been made in engineering the grain sizes of GFs by modifying the CVD processes or developing some new growth approaches. The key strategies involve controlling the nucleation density, growth rate, and grain orientation. This review aims to provide a comprehensive description of grain size engineering research of GFs. The main strategies and underlying growth mechanisms of CVD-grown large-area GFs with nanocrystalline, polycrystalline, and single-crystal structures are summarized, in which the advantages and limitations are highlighted. In addition, the scaling law of physical properties in electricity, mechanics, and thermology as a function of grain sizes are briefly discussed. Finally, the perspectives for challenges and future development in this area are also presented.

New Approaches to Produce Large-Area Single Crystal Thin Films

Wafer-scale growth of single crystal thin films of metals, semiconductors, and insulators is crucial for manufacturing high-performance electronic and optical devices, but still challenging from both scientific and industrial perspectives. Recently, unconventional advanced synthetic approaches have been attempted and have made remarkable progress in diversifying the species of producible single crystal thin films. This review introduces several new synthetic approaches to produce large-area single crystal thin films of various materials according to the concepts and principles.

Wrinkle-mediated CVD synthesis of wafer scale Graphene/h-BN heterostructures

The combination of two-dimensional materials (2D) into heterostructures enables their integration in tunable ultrathin devices. For applications in electronics and optoelectronics, direct growth of wafer-scale and vertically stacked graphene/hexagonal boron nitride (h-BN) heterostructures is vital. The fundamental problem, however, is the catalytically inert nature of h-BN substrates, which typically provide a low rate of carbon precursor breakdown and consequently a poor rate of graphene synthesis. Furthermore, out-of-plane deformations such as wrinkles are commonly seen in 2D materials grown by chemical vapor deposition (CVD). Herein, a wrinkle-facilitated route is developed for the fast growth of graphene/h-BN vertical heterostructures on Cu foils. The key advantage of this synthetic pathway is the exploitation of the increased reactivity from inevitable line defects arising from the CVD process, which can act as active sites for graphene nucleation. The resulted heterostructures are found to exhibit superlubric properties with increased bending stiffness, as well as directional electronic properties, as revealed from atomic force microscopy measurements. This work offers a brand-new route for the fast growth of Gr/h-BN heterostructures with practical scalability, thus propelling applications in electronics and nanomechanical systems.

Recent Development of Morphology-Controlled Hybrid Nanomaterials for Triboelectric Nanogenerator: A Review

Being cognizant of modern electronic devices, the scientists are continuing to investigate renewable green-energy resources for a decade. Amid different energy harvesting systems, the triboelectric nanogenerators (TENGs) have been found to be the most promising mechanical harvesting technology and have drawn attention to generate electrical energy. Thanks to its instant output power, choice to opt for wide-ranging materials, low maintenance cost, easy fabrication process and environmentally friendly nature. Due to numerous working modes of TENGs, it is dedicated to desired application at ambient conditions. In this review, an advance correlation of TENGs have been explained based on the variety of nanostructures, including 0D, 1D, 2D, 3D, metal organic frameworks (MOFs), coordination polymers (CPs), covalent organic frameworks (COFs), and perovskite materials. Moreover, an overview of previous and current perspectives of various nanomaterials, synthesis, fabrication and their applications in potential fields have been discussed in detail.

Additive-Assisted Growth of Scaled and Quality 2D Materials

2D materials are increasingly becoming key components in modern electronics because of their prominent electronic and optoelectronic properties. The central and premise to the entire discipline of 2D materials lie in the high-quality and scaled preparations. The chemical vapor deposition (CVD) method offers compelling benefits in terms of scalability and controllability in shaping large-area and high-quality 2D materials. The past few years have witnessed development of numerous CVD growth strategies, with the use of additives attracting substantial attention in the production of scaled 2D crystals. This review provides an overview of different additives used in CVD growth of 2D materials, as well as a methodical demonstration of their vital roles. In addition, the intrinsic mechanisms of the production of scaled 2D crystals with additives are also discussed. Lastly, reliable guidance on the future design of optimal CVD synthesis routes is provided by analyzing the accessibility, pricing, by-products, controllability, universality, and commercialization of various additives.

Toward Epitaxial Growth of Misorientation-Free Graphene on Cu(111) Foils

The epitaxial growth of single-crystal thin films relies on the availability of a single-crystal substrate and a strong interaction between epilayer and substrate. Previous studies have reported the roles of the substrate (e.g., symmetry and lattice constant) in determining the orientations of chemical vapor deposition (CVD)-grown graphene, and Cu(111) is considered as the most promising substrate for epitaxial growth of graphene single crystals. However, the roles of gas-phase reactants and graphene-substrate interaction in determining the graphene orientation are still unclear. Here, we find that trace amounts of oxygen is capable of enhancing the interaction between graphene edges and Cu(111) substrate and, therefore, eliminating the misoriented graphene domains in the nucleation stage. A modified anomalous grain growth method is developed to improve the size of the as-obtained Cu(111) single crystal, relying on strongly textured polycrystalline Cu foils. The batch-to-batch production of A3-size (∼0.42 × 0.3 m²) single-crystal graphene films is achieved on Cu(111) foils relying on a self-designed pilot-scale CVD system. The as-grown graphene exhibits ultrahigh carrier mobilities of 68 000 cm² V^-1 s^-1 at room temperature and 210 000 cm² V^-1 s^-1 at 2.2 K. The findings and strategies provided in our work would accelerate the mass production of high-quality misorientation-free graphene films.

Controllable growth of two-dimensional materials on noble metal substrates

Chemical vapor deposition (CVD) is a promising approach for the controllable synthesis of two-dimensional (2D) materials. Many studies have demonstrated that the morphology and structure of 2D materials are highly dependent on growth substrates. Hence, the choice of growth substrates is essential to achieve the precise control of CVD growth. Noble metal substrates have attracted enormous interest owing to the high catalytic activity and rich surface morphology for 2D material growth. In this review, we introduce recent progress in noble metals as substrates for the controllable growth of 2D materials. The underlying growth mechanism and substrate designs of noble metals based on their unique features are thoroughly discussed. In the end, we outline the advantages and challenges of using noble metal substrates and prospect the possible approaches to extend the uses of noble metal substrates for 2D material growth and enhance the structural controllability of the grown materials.

Continuous orientated growth of scaled single-crystal 2D monolayer films

Single-crystal 2D materials have attracted a boom of scientific and technological activities. Recently, chemical vapor deposition (CVD) shows great promise for the synthesis of high-quality 2D materials owing to high controllability, high scalability and ultra-low cost. Two types of strategies have been developed: one is single-seed method, which focuses on the ultimate control of the density of nucleation into only one nucleus and the other is a multi-seed approach, which concentrates on the precise engineering of orientation of nuclei into a uniform alignment. Currently, the latter is recognized as a more effective method to meet the demand of industrial production, whereas the oriented domains can seamlessly merge into a continuous single-crystal film in a short time. In this review, we present the detailed cases of growing the representative monocrystalline 2D materials via the single-seed CVD method as well as show its advantages and disadvantages in shaping 2D materials. Then, other typical 2D materials (including graphene, h-BN, and TMDs) are given in terms of the unique feature under the guideline of the multi-seed growth approach. Furthermore, the growth mechanism for the 2D single crystals is presented and the following application in electronics, optics and antioxidation coatings are also discussed. Finally, we outline the current challenges, and a bright development in the future of the continuous orientated growth of scaled 2D crystals should be envisioned.

Growth and Selective Etching of Twinned Graphene on Liquid Copper Surface

Although grain boundaries (GBs) in two-dimensional (2D) materials have been extensively observed and characterized, their formation mechanism still remains unexplained. Here a general model has reported to elucidate the mechanism of formation of GBs during 2D materials growth. Based on our model, a general method is put forward to synthesize twinned 2D materials on a liquid substrate. Using graphene growth on liquid Cu surface as an example, the growth of twinned graphene has been demonstrated successfully, in which all the GBs are ultra-long straight twin boundaries. Furthermore, well-defined twin boundaries (TBs) are found in graphene that can be selectively etched by hydrogen gas due to the preferential adsorption of hydrogen atoms at high-energy twins. This study thus reveals the formation mechanism of GBs in 2D materials during growth and paves the way to grow various 2D nanostructures with controlled GBs.

Theoretical Study of Chemical Vapor Deposition Synthesis of Graphene and Beyond: Challenges and Perspectives

Two-dimensional (2D) materials have attracted great attention in recent years because of their unique dimensionality and related properties. Chemical vapor deposition (CVD), a crucial technique for thin-film epitaxial growth, has become the most promising method of synthesizing 2D materials. Different from traditional thin-film growth, where strong chemical bonds are involved in both thin films and substrates, the interaction in 2D materials and substrates involves the van der Waals force and is highly anisotropic, and therefore, traditional thin-film growth theories cannot be applied to 2D material CVD synthesis. During the last 15 years, extensive theoretical studies were devoted to the CVD synthesis of 2D materials. This Perspective attempts to present a theoretical framework for 2D material CVD synthesis as well as the challenges and opportunities in exploring CVD mechanisms. We hope that this Perspective can provide an in-depth understanding of 2D material CVD synthesis and can further stimulate 2D material synthesis.

Batch production of uniform graphene films via controlling gas-phase dynamics in confined space

Batch production of continuous and uniform graphene films is critical for the application of graphene. Chemical vapor deposition (CVD) has shown great promise for mass producing high-quality graphene films. However, the critical factors affected the uniformity of graphene films during the batch production need to be further studied. Herein, we propose a method for batch production of uniform graphene films by controlling the gaseous carbon source to be uniformly distributed near the substrate surface. By designing the growth space of graphene into a rectangular channel structure, we adjusted the velocity of feedstock gas flow to be uniformly distributed in the channel, which is critical for uniform graphene growth. The monolayer graphene film grown inside the rectangular channel structure shows high uniformity with average sheet resistance of 345 Ω sq^-1 without doping. The experimental and simulation results show that the placement of the substrates during batch growth of graphene films will greatly affect the distribution of gas-phase dynamics near the substrate surface and the growth process of graphene. Uniform graphene films with large-scale can be prepared in batches by adjusting the distribution of gas-phase dynamics.

The effect of catalytic copper pretreatments on CVD graphene growth at different stages

The controllable synthesis of high-quality and large-area graphene by chemical vapor deposition (CVD) remains a challenge nowadays. The massive grain boundaries in graphene grown on polycrystalline Cu by CVD significantly reduce its carrier mobility, limiting its application in high-performance electronic devices. Here, we confirm that the synergetic pretreatment of Cu with electropolishing and surface oxidation is a more efficient way to further suppress the graphene nucleation density (GND) and to accelerate the growth rate of the graphene domain by CVD. With increasing the growth time, we found that the increasing amount of GND and growth rate of the graphene domain were both decreasing during the whole CVD process when the Cu surface was not oxidized. By contrast, they kept growing over time when the Cu surface was pre-oxidized, which suggested that the change trends of the effects on the GND and growth rate between the Cu surface morphology and oxygen were opposite in the CVD process. In addition, not only the domain shape, but the number of graphene domain layers were impacted as well, and a large number of irregular ellipse graphene wafers with dendritic multilayer emerged when the Cu surface was oxidized.

Growth and in situ characterization of 2D materials by chemical vapour deposition on liquid metal catalysts: a review

2D materials (2DMs) have now been established as unique and attractive alternatives to replace current technological materials in a number of applications. Chemical vapour deposition (CVD), is undoubtedly the most renowned technique for thin film synthesis and meets all requirements for automated large-scale production of 2DMs. Currently most CVD methods employ solid metal catalysts (SMCat) for the growth of 2DMs however their use has been found to induce structural defects such as wrinkles, fissures, and grain boundaries among others. On the other hand, liquid metal catalysts (LMCat), constitute a possible alternative for the production of defect-free 2DMs albeit with a small temperature penalty. This review is a comprehensive report of past attempts to employ LMCat for the production of 2DMs with emphasis on graphene growth. Special attention is paid to the underlying mechanisms that govern crystal growth and/or grain consolidation and film coverage. Finally, the advent of online metrology which is particularly effective for monitoring the chemical processes under LMCat conditions is also reviewed and certain directions for future development are drawn.

Preparation of single-crystal metal substrates for the growth of high-quality two-dimensional materials

Recent advances on preparing single-crystal metals and their crucial roles in controlled growth of high-quality 2D materials are reviewed.

Hydrogen-Assisted Fast Growth of Large Graphene Grains by Recrystallization of Nanograins

Chemical vapor deposition has been highlighted as a promising tool for facile graphene growth in a large area. However, grain boundaries impose detrimental effects on the mechanical strength or electrical mobility of graphene. Here, we demonstrate that high-pressure hydrogen treatment in the preannealing step plays a key role in fast and large grain growth and leads to the successful synthesis of large grain graphene in 10 s. Large single grains with a maximum size of ∼160 μm grow by recrystallization of nanograins, but ∼1% areal coverage of nanograins remains with 28-30° misorientation angles. Our findings will provide insights into mass production of high-quality graphene.

Spontaneously Splitting Copper Nanowires into Quantum Dots on Graphdiyne for Suppressing Lithium Dendrites

As an emerging carbon allotrope, the controllable growth of graphdiyne has been an important means to explore its unique scientific properties and applications. In this work, the effect of the crystal structure of copper (Cu) on the growth of graphdiyne is systematically studied. It is found that the crystal boundaries are the origin of the reaction activity. The polycrystalline Cu nanowire with many crystal boundaries is spontaneously split into Cu quantum dots (about 3 nm) by the grown graphdiyne. These Cu quantum dots are uniformly dispersed on the graphdiyne, and they block the long-range ordered growth of the graphdiyne. These Cu quantum dots in situ supported on graphdiyne demonstrate high efficiency in inhibiting the growth of lithium dendrites in lithium metal batteries. Based on this interesting finding, the Cu quantum dots anchored on the all-carbon graphdiyne can be prepared on a large scale, and unique applications of Cu quantum dots in electrochemical fields can be implemented.

Rational Design of Binary Alloys for Catalytic Growth of Graphene via Chemical Vapor Deposition

Chemical vapor deposition is the most promising technique for the mass production of high-quality graphene, in which the metal substrate plays a crucial role in the catalytic decomposition of the carbon source, assisting the attachment of the active carbon species, and regulating the structure of the graphene film. Due to some drawbacks of single metal substrates, alloy substrates have gradually attracted attention owing to their complementarity in the catalytic growth of graphene. In this review, we focus on the rational design of binary alloys, such as Cu/Ni, Ni/Mo, and Cu/Si, to control the layer numbers and growth rate of graphene. By analyzing the elementary steps of graphene growth, general principles are summarized in terms of the catalytic activity, metal–carbon interactions, carbon solubility, and mutual miscibility. Several challenges in this field are also put forward to inspire the novel design of alloy catalysts and the synthesis of graphene films bearing desirable properties.

Copper-based etalon filter using antioxidant graphene layer

Copper is a low-cost material compared to silver and gold, having high reflectivity in the near infrared spectral range as well as good electrical and thermal conductivity. Its properties make it a good candidate for metal-based low-cost multilayer thin-film devices and optical components. However, its high reflectance in the devices is reduced because copper is easily oxidized. Here, we suggest a copper-based Fabry-Perot optical filter consisting of a thin dielectric layer stacked between two copper films, which can realize low-cost production compared to a conventional silver-based etalon filter. The reduced performance due to the inherent oxidation of the copper surface can be overcome by passivating the copper films with monolayer graphene. The anti-oxidation of copper film is investigated by optical microscopy, x-ray photoelectron spectroscopy, and transmission measurement in UV-vi spectral ranges. Our results show that the graphene coating can be expanded for various metal-based optical devices in terms of anti-corrosion.

Joule heater based on single-layer graphene

In this work, we have studied the characteristics of a heater based on single-layer graphene obtained by CVD using methane as the carbon precursor and using copper as a catalytic substrate. Synthesized graphene was transferred onto an EVA/PET substrate using a heat press printing method. A theoretical model of heating a polycrystalline graphene film was developed. The temperature gradients in graphene crystallites were estimated based on the model. It was shown that local overheating of graphene crystallite boundaries is the main cause of damage for the graphene-based heater. In order to enhance the power of graphene heaters, it is necessary to reduce the size of 2D graphene crystallites that make up the coating.

Large Single-Crystal Cu Foils with High-Index Facets by Strain-Engineered Anomalous Grain Growth

The rich and complex arrangements of metal atoms in high-index metal facets afford appealing physical and chemical properties, which attracts extensive research interest in material science for the applications in catalysis and surface chemistry. However, it is still a challenge to prepare large-area high-index single crystals in a controllable and cost-efficient manner. Herein, entire commercially available decimeter-sized polycrystalline Cu foils are successfully transformed into single crystals with a series of high-index facets, relying on a strain-engineered anomalous grain growth technique. The introduction of a moderate thermal-contact stress upon the Cu foil during the annealing leads to the formation of high-index grains dominated by the thermal strain of the Cu foils, rather than the (111) surface driven by the surface energy. Besides, the designed static gradient of the temperature enables the as-formed high-index grain seed to expand throughout the entire Cu foil. The as-received high-index Cu foils can serve as the templates for producing high-index single-crystal Cu-based alloys. This work provides an appealing material basis for the epitaxial growth of 2D materials, and the applications that require the unique surface structures of high-index metal foils and their alloys.

Toward Scalable Growth for Single-Crystal Graphene on Polycrystalline Metal Foil

Despite the enormous potential of the single-crystalline two-dimensional (2D) materials for a wide range of future innovations and applications, 2D single-crystals are still suffering in industrialization due to the lack of efficient large-area production methods. In this work, we introduce a general approach for the scalable growth of single-crystalline graphene, which is a representative 2D material, through "transplanting" uniaxially aligned graphene "seedlings" onto a larger-area catalytic growth substrate. By inducing homoepitaxial growth of graphene from the edges of the seeds arrays without additional nucleations, we obtained single-crystalline graphene with an area four times larger than the mother graphene seed substrate. Moreover, the defect-healing process eliminated the inherent defects of seeds, ensuring the reliability and crystallinity of the single-crystalline graphene for industrialization.

Controlled Growth of Single-Crystal Graphene Films

Grain boundaries produced during material synthesis affect both the intrinsic properties of materials and their potential for high-end applications. This effect is commonly observed in graphene film grown using chemical vapor deposition and therefore caused intense interest in controlled growth of grain-boundary-free graphene single crystals in the past ten years. The main methods for enlarging graphene domain size and reducing graphene grain boundary density are classified into single-seed and multiseed approaches, wherein reduction of nucleation density and alignment of nucleation orientation are respectively realized in the nucleation stage. On this basis, detailed synthesis strategies, corresponding mechanisms, and key parameters in the representative methods of these two approaches are separately reviewed, with the aim of providing comprehensive knowledge and a snapshot of the latest status of controlled growth of single-crystal graphene films. Finally, perspectives on opportunities and challenges in synthesizing large-area single-crystal graphene films are discussed.

Graphene-based wearable sensors

The human body is a "delicate machine" full of sensors such as the fingers, nose, and mouth. In addition, numerous physiological signals are being created every moment, which can reflect the condition of the body. The quality and the quantity of the physiological signals are important for diagnoses and the execution of therapies. Due to the incompact interface between the sensors and the skin, the signals obtained by commercial rigid sensors do not bond well with the body; this decreases the quality of the signal. To increase the quantity of the data, it is important to detect physiological signals in real time during daily life. In recent years, there has been an obvious trend of applying graphene devices with excellent performance (flexibility, biocompatibility, and electronic characters) in wearable systems. In this review, we will first provide an introduction about the different methods of synthesis of graphene, and then techniques for graphene patterning will be outlined. Moreover, wearable graphene sensors to detect mechanical, electrophysiological, fluid, and gas signals will be introduced. Finally, the challenges and prospects of wearable graphene devices will be discussed. Wearable graphene sensors can improve the quality and quantity of the physiological signals and have great potential for health-care and telemedicine in the future.

Suitable Surface Oxygen Concentration on Copper Contributes to the Growth of Large Graphene Single Crystals

In this Letter, we found that the growth of graphene on Cu oxide foil is significantly affected by the concentration of oxygen. The grain size of graphene grown on a Cu substrate with a relatively high oxygen concentration is much smaller than that on the substrate with lower oxygen concentration. By controlling the oxidation of the Cu substrate at a proper degree, we can obtain millimeter scale graphene single crystals at a growth temperature of 1050 °C. On the basis of our experimental observations, the dual role of oxygen in the CVD growth of graphene was revealed: (i) Oxygen on a Cu surface can contribute to the decomposition of hydrocarbon feedstock and decrease the graphene growth barrier, resulting in an increased growth rate and a larger grain size of graphene; (ii) excess oxygen in the Cu substrate leads to etching of the graphene edge. Our research provides insights to obtain large-area and single-crystalline graphene by choosing a proper Cu oxide substrate.

Kinetic modulation of graphene growth by fluorine through spatially confined decomposition of metal fluorides

Two-dimensional materials show a variety of promising properties, and controlling their growth is an important aspect for practical applications. To this end, active species such as hydrogen and oxygen are commonly introduced into reactors to promote the synthesis of two-dimensional materials with specific characteristics. Here, we demonstrate that fluorine can play a crucial role in tuning the growth kinetics of three representative two-dimensional materials (graphene, hexagonal boron nitride and WS₂). When growing graphene by chemical vapour deposition on a copper foil, fluorine released from the decomposition of a metal fluoride placed near the copper foil greatly accelerates the growth of the graphene (up to a rate of ~200 μm s^-1). Theoretical calculations show that it does so by promoting decomposition of the methane feedstock, which converts the endothermic growth process to an exothermic one. We further show that the presence of fluorine also accelerates the growth of two-dimensional hexagonal boron nitride and WS₂.

Scalable and ultrafast epitaxial growth of single-crystal graphene wafers for electrically tunable liquid-crystal microlens arrays

The scalable growth of wafer-sized single-crystal graphene in an energy-efficient manner and compatible with wafer process is critical for the killer applications of graphene in high-performance electronics and optoelectronics. Here, ultrafast epitaxial growth of single-crystal graphene wafers is realized on single-crystal Cu₉₀Ni₁₀(1 1 1) thin films fabricated by a tailored two-step magnetron sputtering and recrystallization process. The minor nickel (Ni) content greatly enhances the catalytic activity of Cu, rendering the growth of a 4 in. single-crystal monolayer graphene wafer in 10 min on Cu₉₀Ni₁₀(1 1 1), 50 folds faster than graphene growth on Cu(1 1 1). Through the carbon isotope labeling experiments, graphene growth on Cu₉₀Ni₁₀(1 1 1) is proved to be exclusively surface-reaction dominated, which is ascribed to the Cu surface enrichment in the CuNi alloy, as indicated by element in-depth profile. One of the best benefits of our protocol is the compatibility with wafer process and excellent scalability. A pilot-scale chemical vapor deposition (CVD) system is designed and built for the mass production of single-crystal graphene wafers, with productivity of 25 pieces in one process cycle. Furthermore, we demonstrate the application of single-crystal graphene in electrically controlled liquid-crystal microlens arrays (LCMLA), which exhibit highly tunable focal lengths near 2 mm under small driving voltages. By integration of the graphene based LCMLA and a CMOS sensor, a prototype camera is proposed that is available for simultaneous light-field and light intensity imaging. The single-crystal graphene wafers could hold great promising for high-performance electronics and optoelectronics that are compatible with wafer process.

Ultrafast Transition of Nonuniform Graphene to High-Quality Uniform Monolayer Films on Liquid Cu

It is essentially important to synthesize uniform graphene films with a controlled number of layers because their properties strongly depend on the number of layers. Although chemical vapor deposition (CVD) on Cu has been widely used to synthesize large-area graphene films, the growth on solid and liquid Cu (L-Cu) suffers from poor thickness uniformity with a great number of adlayers and difficulty in forming continuous films even after a long growth time of hours, respectively. Here, we found that nonuniform graphene films initially grown on solid Cu (S-Cu) foil can rapidly transform into continuously uniform monolayer graphene film on L-Cu within 3 min. Moreover, the films obtained show larger grain size, higher quality, better optical and electrical properties, and better performance in organic light-emitting diode applications than the original films grown on S-Cu foil. By using carbon isotope labeling, we revealed that the multilayer-to-monolayer transition of graphene on L-Cu experiences etching-"self-aligning"-coalescence processes. This two-step CVD method not only opens up a new way for the rapid growth of uniform monolayer graphene films but also provides helpful information for the controlled growth of uniform monolayers of other 2D materials such as monolayer h-BN.

Growth of Large-Area High-Quality Graphene on Different Types of Copper Foil Preannealed under Positive Pressure H2 Ambience

Large-area high-quality graphene was synthesized on different types of copper foils preannealed under positive pressure H2 atmosphere between 1 and 2 standard atmospheres. The prepared graphene showed good electrical conductivity, transmittance, and uniformity. The sheet resistance values of the grown monolayer graphene film were all about 500 Ω/□, and the transmittance was as high as 97.24%. The carrier mobility of the monolayer graphene film was around 2000-3000 cm2/(V s). Furthermore, the monolayer coverage could be more than 95.00% controlled by adjusting the process parameters. The properties of the four layer-superposed graphene film nearly reached that of the commercialized indium tin oxide (ITO) glasses, which showed that the prepared graphene could be well applied to the transparent conductive electrode. The obtained graphene film has been used to construct Si/graphene solar cells without an antireflection film, which showed energy conversion efficiency among 4.99-5.62%.

Restoring self-limited growth of single-layer graphene on copper foil via backside coating

The growth of single-layer graphene (SLG) by chemical vapor deposition (CVD) on copper surfaces is very popular because of the self-limiting effect that, in principle, prevents the growth of few-layer graphene (FLG). However, the reproducibility of the CVD growth of homogeneous SLG remains a major challenge, especially if one wants to avoid heavy surface treatments, monocrystalline substrates and expensive equipment to control the atmosphere inside the growth system. We demonstrate here that backside tungsten coating of copper foils allows for the exclusive growth of SLG with full coverage by atmospheric pressure CVD implemented in a vacuum-free furnace. We show that the absence of FLG patches is related to the suppression of carbon diffusion through copper. In the perspective of large-scale production of graphene, this approach constitutes a significant improvement to the traditional CVD growth process since (1) a tight control of the hydrocarbon flow is no longer required to avoid FLG formation and, consequently, (2) the growth duration necessary to reach full coverage can be drastically shortened.

Growth of graphene with large single-crystal domains by Ni foam-assisted structure and its high-gain field-effect transistors

High-quality graphene materials and high-performance graphene transistors have attracted much attention in recent years. To obtain high-performance graphene transistors, large single-crystal graphene is needed. The synthesis of large-domain-sized single-crystal graphene requires low nucleation density; this can lead to a lower growth rate. In this study, a Ni-foam assisted structure was developed to control the nucleation density and growth rate of graphene by tuning the flow dynamics. Lower nucleation density and high growth rate (∼50 μm min^-1) were achieved with a 4 mm-gap Ni foam. With the graphene transistor fabrication process, a pre-deposited Au film as the protective layer was used during the graphene transfer. Graphene transistors showed good current saturation with drain differential conductance as low as 0.04 S mm^-1 in the strong saturation region. For the devices with gate length of 2 μm, the intrinsic cut-off frequency f _T and maximum oscillation frequency f _max were 8.4 and 16.3 GHz, respectively, with f _max/f _T = 1.9 and power gain of up to 6.4 dB at 1 GHz. The electron velocity saturation induced by the surface optical phonons of SiO₂ substrates was analyzed. Electron velocity saturation and ultra-thin Al₂O₃ gate dielectrics were thought to be the reasons for the good current saturation and high power gain of the graphene transistors.

Toward Mass Production of CVD Graphene Films

Chemical vapor deposition (CVD) is considered to be an efficient method for fabricating large-area and high-quality graphene films due to its excellent controllability and scalability. Great efforts have been made to control the growth of graphene to achieve large domain sizes, uniform layers, fast growth, and low synthesis temperatures. Some attempts have been made by both the scientific community and startup companies to mass produce graphene films; however, there is a large difference in the quality of graphene synthesized on a laboratory scale and an industrial scale. Here, recent progress toward the mass production of CVD graphene films is summarized, including the manufacturing process, equipment, and critical process parameters. Moreover, the large-scale homogeneity of graphene films and fast characterization methods are also discussed, which are crucial for quality control in mass production.

Kinetics of Graphene and 2D Materials Growth

During the last 10 years, remarkable achievements on the chemical vapor deposition (CVD) growth of 2D materials have been made, but the understanding of the underlying mechanisms is still relatively limited. Here, the current progress on the understanding of the growth kinetics of 2D materials, especially for their CVD synthesis, is reviewed. In order to present a complete picture of 2D materials' growth kinetics, the following factors are discussed: i) two types of growth modes, namely attachment-limited growth and diffusion-limited growth; ii) the etching of 2D materials, which offers an additional degree of freedom for growth control; iii) a number of experimental factors in graphene CVD synthesis, such as structure of the substrate, pressure of hydrogen or oxygen, temperature, etc., which are found to have profound effects on the growth kinetics; iv) double-layer and few-layer 2D materials' growth, which has distinct features different from the growth of single-layer 2D materials; and v) the growth of polycrystalline 2D materials by the coalescence of a few single crystalline domains. Finally, the current challenges and opportunities in future 2D materials' synthesis are summarized.

Confined van der Waals Epitaxial Growth of Two-Dimensional Large Single-Crystal In2Se3 for Flexible Broadband Photodetectors

The controllable growth of two-dimensional (2D) semiconductors with large domain sizes and high quality is much needed in order to reduce the detrimental effect of grain boundaries on device performance but has proven to be challenging. Here, we analyze the precursor concentration on the substrate surface which significantly influences nucleation density in a vapor deposition growth process and design a confined micro-reactor to grow 2D In₂Se₃ with large domain sizes and high quality. The uniqueness of this confined micro-reactor is that its size is ~10²-10³ times smaller than that of a conventional reactor. Such a remarkably small reactor causes a very low precursor concentration on the substrate surface, which reduces nucleation density and leads to the growth of 2D In₂Se₃ grains with sizes larger than 200 μm. Our experimental results show large domain sizes of the 2D In₂Se₃ with high crystallinity. The flexible broadband photodetectors based on the as-grown In₂Se₃ show rise and decay times of 140 ms and 25 ms, efficient response (5.6 A/W), excellent detectivity (7×10¹⁰ Jones), high external quantum efficiency (251%), good flexibility, and high stability. This study, in principle, provides an effective strategy for the controllable growth of high quality 2D materials with few grain boundaries.

Bridging the Gap between Reality and Ideal in Chemical Vapor Deposition Growth of Graphene

Graphene, in its ideal form, is a two-dimensional (2D) material consisting of a single layer of carbon atoms arranged in a hexagonal lattice. The richness in morphological, physical, mechanical, and optical properties of ideal graphene has stimulated enormous scientific and industrial interest, since its first exfoliation in 2004. In turn, the production of graphene in a reliable, controllable, and scalable manner has become significantly important to bring us closer to practical applications of graphene. To this end, chemical vapor deposition (CVD) offers tantalizing opportunities for the synthesis of large-area, uniform, and high-quality graphene films. However, quite different from the ideal 2D structure of graphene, in reality, the currently available CVD-grown graphene films are still suffering from intrinsic defective grain boundaries, surface contaminations, and wrinkles, together with low growth rate and the requirement of inevitable transfer. Clearly, a gap still exits between the reality of CVD-derived graphene, especially in industrial production, and ideal graphene with outstanding properties. This Review will emphasize the recent advances and strategies in CVD production of graphene for settling these issues to bridge the giant gap. We begin with brief background information about the synthesis of nanoscale carbon allotropes, followed by the discussion of fundamental growth mechanism and kinetics of CVD growth of graphene. We then discuss the strategies for perfecting the quality of CVD-derived graphene with regard to domain size, cleanness, flatness, growth rate, scalability, and direct growth of graphene on functional substrate. Finally, a perspective on future development in the research relevant to scalable growth of high-quality graphene is presented.

Low-Temperature Heteroepitaxy of 2D PbI2 /Graphene for Large-Area Flexible Photodetectors

Heterostructures based on graphene and other 2D atomic crystals exhibit fascinating properties and intriguing potential in flexible optoelectronics, where graphene films function as transparent electrodes and other building blocks are used as photoactive materials. However, large-scale production of such heterostructures with superior performance is still in early stages. Herein, for the first time, the preparation of a submeter-sized, vertically stacked heterojunction of lead iodide (PbI2 )/graphene on a flexible polyethylene terephthalate (PET) film by vapor deposition of PbI2 on graphene/PET substrate at a temperature lower than 200 °C is demonstrated. This film is subsequently used to fabricate bendable graphene/PbI2 /graphene sandwiched photodetectors, which exhibit high responsivity (45 A W-1 cm-2 ), fast response (35 µs rise, 20 µs decay), and high-resolution imaging capability (1 µm). This study may pave a facile pathway for scalable production of high-performance flexible devices.

Highly Oriented Monolayer Graphene Grown on a Cu/Ni(111) Alloy Foil

Fast-growth of single crystal monolayer graphene by CVD using methane and hydrogen has been achieved on "homemade" single crystal Cu/Ni(111) alloy foils over large area. Full coverage was achieved in 5 min or less for a particular range of composition (1.3 at.% to 8.6 at.% Ni), as compared to 60 min for a pure Cu(111) foil under identical growth conditions. These are the bulk atomic percentages of Ni, as a superstructure at the surface of these foils with stoichiometry Cu₆Ni₁ (for 1.3 to 7.8 bulk at.% Ni in the Cu/Ni(111) foil) was discovered by low energy electron diffraction (LEED). Complete large area monolayer graphene films are either single crystal or close to single crystal, and include folded regions that are essentially parallel and that were likely wrinkles that "fell over" to bind to the surface; these folds are separated by large, wrinkle-free regions. The folds occur due to the buildup of interfacial compressive stress (and its release) during cooling of the foils from 1075 °C to room temperature. The fold heights measured by atomic force microscopy (AFM) and scanning tunneling microscopy (STM) prove them to all be 3 layers thick, and scanning electron microscopy (SEM) imaging shows them to be around 10 to 300 nm wide and separated by roughly 20 μm. These folds are always essentially perpendicular to the steps in this Cu/Ni(111) substrate. Joining of well-aligned graphene islands (in growths that were terminated prior to full film coverage) was investigated with high magnification SEM and aberration-corrected high-resolution transmission electron microscopy (TEM) as well as AFM, STM, and optical microscopy. These methods show that many of the "join regions" have folds, and these arise from interfacial adhesion mechanics (they are due to the buildup of compressive stress during cool-down, but these folds are different than for the continuous graphene films-they occur due to "weak links" in terms of the interface mechanics). Such Cu/Ni(111) alloy foils are promising substrates for the large-scale synthesis of single-crystal graphene film.

Effects of carbon-based impurities on graphene growth

In this paper, we studied the growth of graphene on an untreated Cu substrate and further studied the effect of carbon-based impurities on the nucleation of graphene in different growth environments. It is found that the impurities on the surface of the Cu substrate easily lead to damage of the graphene, and the impurities do not always promote nucleation as previously reported, but inhibit nucleation in a high etching environment. Finally, based on experimental results, a model of nucleation and growth of graphene around impurities is presented.

Chemical synthesis of two-dimensional atomic crystals, heterostructures and superlattices

Two-dimensional atomic crystals (2DACs) have attracted intense recent interest. With a nearly perfect crystalline structure and dangling-bond free surface, these atomically thin materials have emerged as a new material platform for fundamental materials science and diverse technology opportunities at the limit of single atom thickness. Over the past decade, a wide range of 2DACs has been prepared by mechanically exfoliating bulk layered crystals, which has fueled the rapid progress of the entire field in terms of fundamental physics and basic device demonstrations. However, studies to date are largely limited to mechanically exfoliated flakes, which are clearly not scalable for practical applications. The chemical synthesis of these materials has been lagging far behind fundamental property investigations or novel device demonstrations, which limits further progress of the field. To explore the full potential of 2DACs requires a robust synthesis of these atomically thin materials and scalable construction of complex heterostructures with designed spatial modulation of chemical compositions and electronic structures. The extreme aspect ratio and highly delicate nature of the atomically thin crystals pose a significant synthetic challenge beyond traditional bulk crystals and have motivated considerable efforts worldwide. Here we will review the recent advances, challenges and future perspective of the chemical synthesis of 2DACs, heterostructures and superlattices.

A Perspective on the Application of Spatially Resolved ARPES for 2D Materials

In this paper, a perspective on the application of Spatially- and Angle-Resolved PhotoEmission Spectroscopy (ARPES) for the study of two-dimensional (2D) materials is presented. ARPES allows the direct measurement of the electronic band structure of materials generating extremely useful insights into their electronic properties. The possibility to apply this technique to 2D materials is of paramount importance because these ultrathin layers are considered fundamental for future electronic, photonic and spintronic devices. In this review an overview of the technical aspects of spatially localized ARPES is given along with a description of the most advanced setups for laboratory and synchrotron-based equipment. This technique is sensitive to the lateral dimensions of the sample. Therefore, a discussion on the preparation methods of 2D material is presented. Some of the most interesting results obtained by ARPES are reported in three sections including: graphene, transition metal dichalcogenides (TMDCs) and 2D heterostructures. Graphene has played a key role in ARPES studies because it inspired the use of this technique with other 2D materials. TMDCs are presented for their peculiar transport, optical and spin properties. Finally, the section featuring heterostructures highlights a future direction for research into 2D material structures.

Controlling Fundamental Fluctuations for Reproducible Growth of Large Single-Crystal Graphene

The controlled growth of graphene by the chemical vapor deposition method is vital for its various applications; however, the reproducibility remains a great challenge. Here, using single-crystal graphene growth on a Cu surface as a model system, we demonstrate that a trace amount of H₂O and O₂ impurity gases in the reaction chamber is key for the large fluctuation of graphene growth. By precisely controlling their parts per million level concentrations, centimeter-sized single-crystal graphene is obtained in a reliable manner with a maximum growth rate up to 190 μm min^-1. The roles of oxidants are elucidated as an effective modulator for both graphene nucleation density and growth rate. This control is more fundamental for reliable growth of graphene beyond previous findings and is expected to be useful for the growth of various 2D materials that are also sensitive to trace oxidant impurities.