1
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Eom K, Chung B, Oh S, Zhou H, Seo J, Oh SH, Jang J, Choi SY, Choi M, Seo I, Lee YS, Kim Y, Lee H, Lee JW, Lee K, Rzchowski M, Eom CB, Lee J. Surface triggered stabilization of metastable charge-ordered phase in SrTiO 3. Nat Commun 2024; 15:1180. [PMID: 38332134 PMCID: PMC10853244 DOI: 10.1038/s41467-024-45342-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/07/2023] [Accepted: 01/17/2024] [Indexed: 02/10/2024] Open
Abstract
Charge ordering (CO), characterized by a periodic modulation of electron density and lattice distortion, has been a fundamental topic in condensed matter physics, serving as a potential platform for inducing novel functional properties. The charge-ordered phase is known to occur in a doped system with high d-electron occupancy, rather than low occupancy. Here, we report the realization of the charge-ordered phase in electron-doped (100) SrTiO3 epitaxial thin films that have the lowest d-electron occupancy i.e., d1-d0. Theoretical calculation predicts the presence of a metastable CO state in the bulk state of electron-doped SrTiO3. Atomic scale analysis reveals that (100) surface distortion favors electron-lattice coupling for the charge-ordered state, and triggering the stabilization of the CO phase from a correlated metal state. This stabilization extends up to six unit cells from the top surface to the interior. Our approach offers an insight into the means of stabilizing a new phase of matter, extending CO phase to the lowest electron occupancy and encompassing a wide range of 3d transition metal oxides.
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Affiliation(s)
- Kitae Eom
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
- Department of Electronic Engineering, Gachon University, Seongnam, 13120, Republic of Korea
| | - Bongwook Chung
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Sehoon Oh
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Hua Zhou
- X-ray Science Division, Advanced Photon Source, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Jinsol Seo
- Department of Energy Engineering, KENTECH Institute for Energy Materials and Devices, Korea Institute of Energy Technology (KENTECH), Naju, 58330, Republic of Korea
| | - Sang Ho Oh
- Department of Energy Engineering, KENTECH Institute for Energy Materials and Devices, Korea Institute of Energy Technology (KENTECH), Naju, 58330, Republic of Korea
| | - Jinhyuk Jang
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk, 37673, Republic of Korea
| | - Si-Young Choi
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk, 37673, Republic of Korea
| | - Minsu Choi
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Ilwan Seo
- Department of Physics and Integrative Institute of Basic Sciences, Soongsil University, Seoul, 06978, Republic of Korea
| | - Yun Sang Lee
- Department of Physics and Integrative Institute of Basic Sciences, Soongsil University, Seoul, 06978, Republic of Korea
| | - Youngmin Kim
- Department of Energy Systems Research, Ajou University, Suwon, 16499, Republic of Korea
| | - Hyungwoo Lee
- Department of Energy Systems Research, Ajou University, Suwon, 16499, Republic of Korea
- Department of Physics, Ajou University, Suwon, 16499, Republic of Korea
| | - Jung-Woo Lee
- Department of Materials Science and Engineering, Hongik University, Sejong, 30016, Republic of Korea
| | - Kyoungjun Lee
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Mark Rzchowski
- Department of Physics, University of Wisconsin, Madison, WI, 53706, USA
| | - Chang-Beom Eom
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA.
| | - Jaichan Lee
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea.
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2
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Wang M, Zhu T, Bai H, Yin Z, Xu H, Shi W, Li Z, Zheng J, Gan Y, Chen Y, Shen B, Chen Y, Zhang Q, Hu F, Sun JR. Layered Ferromagnetic Structure Caused by the Proximity Effect and Interlayer Charge Transfer for LaNiO 3/LaMnO 3 Superlattices. NANO LETTERS 2024; 24:1122-1129. [PMID: 38230636 DOI: 10.1021/acs.nanolett.3c03658] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/18/2024]
Abstract
Magnetic proximity-induced magnetism in paramagnetic LaNiO3 (LNO) has spurred intensive investigations in the past decade. However, no consensus has been reached so far regarding the magnetic order in LNO layers in relevant heterostructures. This paper reports a layered ferromagnetic structure for the (111)-oriented LNO/LaMnO3 (LMO) superlattices. It is found that each period of the superlattice consisted of an insulating LNO-interfacial phase (five unit cells in thickness, ∼1.1 nm), a metallic LNO-inner phase, a poorly conductive LMO-interfacial phase (three unit cells in thickness, ∼0.7 nm), and an insulating LMO-inner phase. All four of these phases are ferromagnetic, showing different magnetizations. The Mn-to-Ni interlayer charge transfer is responsible for the emergence of a layered magnetic structure, which may cause magnetic interaction across the LNO/LMO interface and double exchange within the LMO-interfacial layer. This work indicates that the proximity effect is an effective means of manipulating the magnetic state and associated properties of complex oxides.
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Affiliation(s)
- Mengqin Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Tao Zhu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Spallation Neutron Source Science Center, Dongguan 523803, China
| | - He Bai
- Spallation Neutron Source Science Center, Dongguan 523803, China
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
| | - Zhuo Yin
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hao Xu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Wenxiao Shi
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhe Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jie Zheng
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yulin Gan
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yunzhong Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Baogen Shen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, China
| | - Yuansha Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Fengxia Hu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Ji-Rong Sun
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- School of Materials Science & Engineering, Taiyuan University of Science and Technology, Taiyuan 030024, China
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3
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Yang C, Pons R, Sigle W, Wang H, Benckiser E, Logvenov G, Keimer B, van Aken PA. Direct observation of strong surface reconstruction in partially reduced nickelate films. Nat Commun 2024; 15:378. [PMID: 38191551 PMCID: PMC10774438 DOI: 10.1038/s41467-023-44616-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/15/2023] [Accepted: 12/22/2023] [Indexed: 01/10/2024] Open
Abstract
The polarity of a surface can affect the electronic and structural properties of oxide thin films through electrostatic effects. Understanding the mechanism behind these effects requires knowledge of the atomic structure and electrostatic characteristics at the surface. In this study, we use annular bright-field imaging to investigate the surface structure of a Pr0.8Sr0.2NiO2+x (0 < x < 1) film. We observe a polar distortion coupled with octahedral rotations in a fully oxidized Pr0.8Sr0.2NiO3 sample, and a stronger polar distortion in a partially reduced sample. Its spatial depth extent is about three unit cells from the surface. Additionally, we use four-dimensional scanning transmission electron microscopy (4D-STEM) to directly image the local atomic electric field surrounding Ni atoms near the surface and discover distinct valence variations of Ni atoms, which are confirmed by atomic-resolution electron energy-loss spectroscopy (EELS). Our results suggest that the strong surface reconstruction in the reduced sample is closely related to the formation of oxygen vacancies from topochemical reduction. These findings provide insights into the understanding and evolution of surface polarity at the atomic level.
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Affiliation(s)
- Chao Yang
- Max Planck Institute for Solid State Research, Stuttgart, Germany.
| | - Rebecca Pons
- Max Planck Institute for Solid State Research, Stuttgart, Germany
| | - Wilfried Sigle
- Max Planck Institute for Solid State Research, Stuttgart, Germany
| | - Hongguang Wang
- Max Planck Institute for Solid State Research, Stuttgart, Germany
| | - Eva Benckiser
- Max Planck Institute for Solid State Research, Stuttgart, Germany
| | - Gennady Logvenov
- Max Planck Institute for Solid State Research, Stuttgart, Germany
| | - Bernhard Keimer
- Max Planck Institute for Solid State Research, Stuttgart, Germany
| | - Peter A van Aken
- Max Planck Institute for Solid State Research, Stuttgart, Germany
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4
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Lovett AJ, Daramalla V, Sayed FN, Nayak D, de h-Óra M, Grey CP, Dutton SE, MacManus-Driscoll JL. Low Temperature Epitaxial LiMn 2O 4 Cathodes Enabled by NiCo 2O 4 Current Collector for High-Performance Microbatteries. ACS ENERGY LETTERS 2023; 8:3437-3442. [PMID: 37588016 PMCID: PMC10425970 DOI: 10.1021/acsenergylett.3c01094] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/05/2023] [Accepted: 07/12/2023] [Indexed: 08/18/2023]
Abstract
Epitaxial cathodes in lithium-ion microbatteries are ideal model systems to understand mass and charge transfer across interfaces, plus interphase degradation processes during cycling. Importantly, if grown at <450 °C, they also offer potential for complementary metal-oxide-semiconductor (CMOS) compatible microbatteries for the Internet of Things, flexible electronics, and MedTech devices. Currently, prominent epitaxial cathodes are grown at high temperatures (>600 °C), which imposes both manufacturing and scale-up challenges. Herein, we report structural and electrochemical studies of epitaxial LiMn2O4 (LMO) thin films grown on a new current collector material, NiCo2O4 (NCO). We achieve this at the low temperature of 360 °C, ∼200 °C lower than existing current collectors SrRuO3 and LaNiO3. Our films achieve a discharge capacity of >100 mAh g-1 for ∼6000 cycles with distinct LMO redox signatures, demonstrating long-term electrochemical stability of our NCO current collector. Hence, we show a route toward high-performance microbatteries for a range of miniaturized electronic devices.
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Affiliation(s)
- Adam J. Lovett
- Department
of Materials Science and Metallurgy, University
of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
| | - Venkateswarlu Daramalla
- Cavendish
Laboratory, University of Cambridge, JJ Thompson Avenue, Cambridge CB3 0HE, United Kingdom
- The
Faraday Institution, Quad One, Harwell Campus, Didcot OX11 0RA, United Kingdom
| | - Farheen N. Sayed
- The
Faraday Institution, Quad One, Harwell Campus, Didcot OX11 0RA, United Kingdom
- Yusef
Hamied Department of Chemistry, Lensfield Rd., Cambridge CB2 1EW, United Kingdom
| | - Debasis Nayak
- Department
of Materials Science and Metallurgy, University
of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
- The
Faraday Institution, Quad One, Harwell Campus, Didcot OX11 0RA, United Kingdom
| | - Muireann de h-Óra
- Department
of Materials Science and Metallurgy, University
of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
| | - Clare P. Grey
- The
Faraday Institution, Quad One, Harwell Campus, Didcot OX11 0RA, United Kingdom
- Yusef
Hamied Department of Chemistry, Lensfield Rd., Cambridge CB2 1EW, United Kingdom
| | - Siân E. Dutton
- Cavendish
Laboratory, University of Cambridge, JJ Thompson Avenue, Cambridge CB3 0HE, United Kingdom
- The
Faraday Institution, Quad One, Harwell Campus, Didcot OX11 0RA, United Kingdom
| | - Judith L. MacManus-Driscoll
- Department
of Materials Science and Metallurgy, University
of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
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5
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Jin Q, Zhang Q, Bai H, Huon A, Charlton T, Chen S, Lin S, Hong H, Cui T, Wang C, Guo H, Gu L, Zhu T, Fitzsimmons MR, Jin KJ, Wang S, Guo EJ. Emergent Magnetic States and Tunable Exchange Bias at 3d Nitride Heterointerfaces. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2208221. [PMID: 36300813 DOI: 10.1002/adma.202208221] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/07/2022] [Revised: 10/19/2022] [Indexed: 06/16/2023]
Abstract
Interfacial magnetism stimulates the discovery of giant magnetoresistance (MR) and spin-orbital coupling across the heterointerfaces, facilitating the intimate correlation between spin transport and complex magnetic structures. Over decades, functional heterointerfaces composed of nitrides have seldom been explored due to the difficulty in synthesizing high-quality nitride films with correct compositions. Here, the fabrication of single-crystalline ferromagnetic Fe3 N thin films with precisely controlled thicknesses is reported. As film thickness decreases, the magnetization dramatically deteriorates, and the electronic state changes from metallic to insulating. Strikingly, the high-temperature ferromagnetism is maintained in a Fe3 N layer with a thickness down to 2 u.c. (≈8 Å). The MR exhibits a strong in-plane anisotropy; meanwhile, the anomalous Hall resistivity reverses its sign when the Fe3 N layer thickness exceeds 5 u.c. Furthermore, a sizable exchange bias is observed at the interfaces between a ferromagnetic Fe3 N and an antiferromagnetic CrN. The exchange bias field and saturation moment strongly depend on the controllable bending curvature using the cylinder diameter engineering technique, implying the tunable magnetic states under lattice deformation. This work provides a guideline for exploring functional nitride films and applying their interfacial phenomena for innovative perspectives toward practical applications.
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Affiliation(s)
- Qiao Jin
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - He Bai
- Spallation Neutron Source Science Center, Dongguan, 523803, P. R. China
| | - Amanda Huon
- Department of Physics, Saint Joseph's University, Philadelphia, PA, 19131, USA
| | - Timothy Charlton
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Shengru Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Shan Lin
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Haitao Hong
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Ting Cui
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Can Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, P. R. China
| | - Haizhong Guo
- Key Laboratory of Material Physics & School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450001, P. R. China
| | - Lin Gu
- National Center for Electron Microscopy in Beijing and School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Tao Zhu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, P. R. China
| | - Michael R Fitzsimmons
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
- Department of Physics and Astronomy, University of Tennessee, Knoxville, TN, 37996, USA
| | - Kui-Juan Jin
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, P. R. China
| | - Shanmin Wang
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Er-Jia Guo
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, P. R. China
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6
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Improving Fast Charging-Discharging Performances of Ni-Rich LiNi 0.8Co 0.1Mn 0.1O 2 Cathode Material by Electronic Conductor LaNiO 3 Crystallites. MATERIALS 2022; 15:ma15010396. [PMID: 35009542 PMCID: PMC8746607 DOI: 10.3390/ma15010396] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/03/2021] [Revised: 12/24/2021] [Accepted: 01/03/2022] [Indexed: 11/23/2022]
Abstract
Fast charging-discharging is one of the important requirements for next-generation high-energy Li-ion batteries, nevertheless, electrons transport in the active oxide materials is limited. Thus, carbon coating of active materials is a common method to supply the routes for electron transport, but it is difficult to synthesize the oxide-carbon composite for LiNiO2-based materials which need to be calcined in an oxygen-rich atmosphere. In this work, LiNi0.8Co0.1Mn0.1O2 (NCM811) coated with electronic conductor LaNiO3 (LNO) crystallites is demonstrated for the first time as fast charging-discharging and high energy cathodes for Li-ion batteries. The LaNiO3 succeeds in providing an exceptional fast charging-discharging behavior and initial coulombic efficiency in comparison with pristine NCM811. Consequently, the NCM811@3LNO electrode presents a higher capacity at 0.1 C (approximately 246 mAh g−1) and a significantly improved high rate performance (a discharge specific capacity of 130.62 mAh g−1 at 10 C), twice that of pristine NCM811. Additionally, cycling stability is also improved for the composite material. This work provides a new possibility of active oxide cathodes for high energy/power Li-ion batteries by electronic conductor LaNiO3 coating.
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7
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Lee J, Kim GY, Jeong S, Yang M, Kim JW, Cho BG, Choi Y, Kim S, Choi JS, Lee TK, Kim J, Lee DR, Chang SH, Park S, Jung JH, Bark CW, Koo TY, Ryan PJ, Ihm K, Kim S, Choi SY, Kim TH, Lee S. Template Engineering of Metal-to-Insulator Transitions in Epitaxial Bilayer Nickelate Thin Films. ACS APPLIED MATERIALS & INTERFACES 2021; 13:54466-54475. [PMID: 34739229 DOI: 10.1021/acsami.1c13675] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Understanding metal-to-insulator phase transitions in solids has been a keystone not only for discovering novel physical phenomena in condensed matter physics but also for achieving scientific breakthroughs in materials science. In this work, we demonstrate that the transport properties (i.e., resistivity and transition temperature) in the metal-to-insulator transitions of perovskite nickelates are tunable via the epitaxial heterojunctions of LaNiO3 and NdNiO3 thin films. A mismatch in the oxygen coordination environment and interfacial octahedral coupling at the oxide heterointerface allows us to realize an exotic phase that is unattainable in the parent compound. With oxygen vacancy formation for strain accommodation, the topmost LaNiO3 layer in LaNiO3/NdNiO3 bilayer thin films is structurally engineered and it electrically undergoes a metal-to-insulator transition that does not appear in metallic LaNiO3. Modification of the NdNiO3 template layer thickness provides an additional knob for tailoring the tilting angles of corner-connected NiO6 octahedra and the linked transport characteristics further. Our approaches can be harnessed to tune physical properties in complex oxides and to realize exotic physical phenomena through oxide thin-film heterostructuring.
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Affiliation(s)
- Jongmin Lee
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
| | - Gi-Yeop Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
| | - Seyeop Jeong
- Department of Physics, University of Ulsan, Ulsan 44610, Republic of Korea
| | - Mihyun Yang
- Pohang Accelerator Laboratory, Pohang 37673, Republic of Korea
| | - Jong-Woo Kim
- Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, United States
| | - Byeong-Gwan Cho
- Pohang Accelerator Laboratory, Pohang 37673, Republic of Korea
| | - Yongseong Choi
- Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, United States
| | - Sangmo Kim
- Department of Electrical Engineering, Gachon University, Seongnam 13120, Republic of Korea
| | - Jin San Choi
- Department of Physics, University of Ulsan and Energy Harvest-Storage Research Center (EHSRC), Ulsan 44610, Republic of Korea
| | - Tae Kwon Lee
- Department of Physics, Inha University, Incheon 22212, Republic of Korea
| | - Jiwoong Kim
- Department of Physics, Pusan National University, Busan 46241, Republic of Korea
| | - Dong Ryeol Lee
- Department of Physics, Soongsil University, Seoul 06978, Republic of Korea
| | - Seo Hyoung Chang
- Department of Physics, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Sungkyun Park
- Department of Physics, Pusan National University, Busan 46241, Republic of Korea
| | - Jong Hoon Jung
- Department of Physics, Inha University, Incheon 22212, Republic of Korea
| | - Chung Wung Bark
- Department of Electrical Engineering, Gachon University, Seongnam 13120, Republic of Korea
| | - Tae-Young Koo
- Pohang Accelerator Laboratory, Pohang 37673, Republic of Korea
| | - Philip J Ryan
- Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, United States
| | - Kyuwook Ihm
- Pohang Accelerator Laboratory, Pohang 37673, Republic of Korea
| | - Sanghoon Kim
- Department of Physics, University of Ulsan, Ulsan 44610, Republic of Korea
| | - Si-Young Choi
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
| | - Tae Heon Kim
- Department of Physics, University of Ulsan and Energy Harvest-Storage Research Center (EHSRC), Ulsan 44610, Republic of Korea
| | - Sanghan Lee
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
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8
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Kimura M, He X, Katase T, Tadano T, Tomczak JM, Minohara M, Aso R, Yoshida H, Ide K, Ueda S, Hiramatsu H, Kumigashira H, Hosono H, Kamiya T. Large phonon drag thermopower boosted by massive electrons and phonon leaking in LaAlO 3/LaNiO 3/LaAlO 3 heterostructure. NANO LETTERS 2021; 21:9240-9246. [PMID: 34709840 PMCID: PMC8587880 DOI: 10.1021/acs.nanolett.1c03143] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/16/2021] [Revised: 10/11/2021] [Indexed: 06/04/2023]
Abstract
An unusually large thermopower (S) enhancement is induced by heterostructuring thin films of the strongly correlated electron oxide LaNiO3. The phonon-drag effect, which is not observed in bulk LaNiO3, enhances S for thin films compressively strained by LaAlO3 substrates. By a reduction in the layer thickness down to three unit cells and subsequent LaAlO3 surface termination, a 10 times S enhancement over the bulk value is observed due to large phonon drag S (Sg), and the Sg contribution to the total S occurs over a much wider temperature range up to 220 K. The Sg enhancement originates from the coupling of lattice vibration to the d electrons with large effective mass in the compressively strained ultrathin LaNiO3, and the electron-phonon interaction is largely enhanced by the phonon leakage from the LaAlO3 substrate and the capping layer. The transition-metal oxide heterostructures emerge as a new playground to manipulate electronic and phononic properties in the quest for high-performance thermoelectrics.
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Affiliation(s)
- Masatoshi Kimura
- Laboratory
for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan
| | - Xinyi He
- Laboratory
for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan
| | - Takayoshi Katase
- Laboratory
for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan
- PRESTO,
Japan Science and Technology Agency, 7 Gobancho, Chiyoda, Tokyo 102-0076, Japan
| | - Terumasa Tadano
- National
Institute for Materials Science, Sengen, Tsukuba 305-0047, Japan
| | - Jan M. Tomczak
- Institute
of Solid State Physics, Vienna University
of Technology, Wiedner Hauptstrasse 8-10, A-1040 Vienna, Austria
| | - Makoto Minohara
- Research
Institute for Advanced Electronics and Photonics, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
| | - Ryotaro Aso
- Department
of Applied Quantum Physics and Nuclear Engineering, Kyushu University, Fukuoka, Fukuoka 819-0395, Japan
| | - Hideto Yoshida
- The
Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
| | - Keisuke Ide
- Laboratory
for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan
| | - Shigenori Ueda
- Research
Center for Functional Materials, National
Institute for Materials Science, Namiki, Tsukuba 305-0044, Japan
- Research
Center for Advanced Measurement and Characterization, National Institute for Materials Science, Tsukuba 305-0047, Japan
- Synchrotron
X-ray Station at SPring-8, National Institute
for Materials Science, 1-1-1 Sayo, Hyogo, 679-5148, Japan
| | - Hidenori Hiramatsu
- Laboratory
for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan
- Materials
Research Center for Element Strategy, Tokyo
Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan
| | - Hiroshi Kumigashira
- Photon
Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization, Tsukuba, Ibaraki 305-0801, Japan
- Institute
of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan
| | - Hideo Hosono
- Materials
Research Center for Element Strategy, Tokyo
Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan
| | - Toshio Kamiya
- Laboratory
for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan
- Materials
Research Center for Element Strategy, Tokyo
Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan
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9
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Ahn C, Cavalleri A, Georges A, Ismail-Beigi S, Millis AJ, Triscone JM. Designing and controlling the properties of transition metal oxide quantum materials. NATURE MATERIALS 2021; 20:1462-1468. [PMID: 33941911 DOI: 10.1038/s41563-021-00989-2] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/08/2020] [Accepted: 03/17/2021] [Indexed: 06/12/2023]
Abstract
This Perspective addresses the design, creation, characterization and control of synthetic quantum materials with strong electronic correlations. We show how emerging synergies between theoretical/computational approaches and materials design/experimental probes are driving recent advances in the discovery, understanding and control of new electronic behaviour in materials systems with interesting and potentially technologically important properties. The focus here is on transition metal oxides, where electronic correlations lead to a myriad of functional properties including superconductivity, magnetism, Mott transitions, multiferroicity and emergent behaviour at picoscale-designed interfaces. Current opportunities and challenges are also addressed, including possible new discoveries of non-equilibrium phenomena and optical control of correlated quantum phases of transition metal oxides.
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Affiliation(s)
| | - Andrea Cavalleri
- Max Planck Institute for the Structure and Dynamics of Matter, Hamburg, Germany
| | - Antoine Georges
- Collège de France, Paris, France
- CCQ-Flatiron Institute, New York, NY, USA
| | | | - Andrew J Millis
- CCQ-Flatiron Institute, New York, NY, USA
- Columbia University, New York, NY, USA
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10
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Sha H, Liang S, Liu L, Cheng Z, Zhu J, Yu R. Surface termination and stoichiometry of LaAlO 3(001) surface studied by HRTEM. Micron 2020; 137:102919. [PMID: 32763838 DOI: 10.1016/j.micron.2020.102919] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/13/2020] [Revised: 07/17/2020] [Accepted: 07/17/2020] [Indexed: 10/23/2022]
Abstract
As an important topic of condensed matter physics, metal oxide surfaces often exhibit exotic properties such as high catalytic activity, enhanced ferroelectricity and electronic phase transition, originating from the different local symmetry with respect to the bulk. As the structure determination of oxide surfaces presents challenges to conventional surface science techniques like scanning tunneling microscopy, aberration-corrected transmission electron microscopy (TEM) has been increasingly used to solve structures of oxide surfaces. In this work, the (001) surface of LaAlO3, one of the most used components of oxide heterostructures, has been investigated. Our TEM experiments and extensive image simulations show that the La-O terminated LaAlO3(001) surface undergoes significant reconstructions, forming La vacancies on the surface layer. Energetically, the LaAlO3(001) surface is stable with the reconstructed La-O termination in a wide range of oxygen chemical potentials. Polarity compensation, reduced density of states at the Fermi level and bond enhancement of subsurface oxygen anions all contribute to the stabilization of the reconstructed surface.
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Affiliation(s)
- Haozhi Sha
- National Center for Electron Microscopy in Beijing, Key Laboratory of Advanced Materials of Ministry of Education of China, State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Shiyou Liang
- National Center for Electron Microscopy in Beijing, Key Laboratory of Advanced Materials of Ministry of Education of China, State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Linhan Liu
- National Center for Electron Microscopy in Beijing, Key Laboratory of Advanced Materials of Ministry of Education of China, State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Zhiying Cheng
- National Center for Electron Microscopy in Beijing, Key Laboratory of Advanced Materials of Ministry of Education of China, State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Jing Zhu
- National Center for Electron Microscopy in Beijing, Key Laboratory of Advanced Materials of Ministry of Education of China, State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Rong Yu
- National Center for Electron Microscopy in Beijing, Key Laboratory of Advanced Materials of Ministry of Education of China, State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
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11
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Kim I, Kim HS, Ryu H. Piezoresistivity of InAsP Nanowires: Role of Crystal Phases and Phosphorus Atoms in Strain-Induced Channel Conductances. Molecules 2019; 24:E3249. [PMID: 31489942 PMCID: PMC6766923 DOI: 10.3390/molecules24183249] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/13/2019] [Revised: 09/02/2019] [Accepted: 09/04/2019] [Indexed: 11/16/2022] Open
Abstract
Strong piezoresistivity of InAsP nanowires is rationalized with atomistic simulations coupled to Density Functional Theory. With a focal interest in the case of the As(75%)-P(25%) alloy, the role of crystal phases and phosphorus atoms in strain-driven carrier conductance is discussed with a direct comparison to nanowires of a single crystal phase and a binary (InAs) alloy. Our analysis of electronic structures presents solid evidences that the strong electron conductance and its sensitivity to external tensile stress are due to the phosphorous atoms in a Wurtzite phase, and the effect of a Zincblende phase is not remarkable. With several solid connections to recent experimental studies, this work can serve as a sound framework for understanding of the unique piezoresistive characteristics of InAsP nanowires.
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Affiliation(s)
- In Kim
- National Institute of Supercomputing and Networking, Korea Institute of Science and Technology Information, Daejeon 34141, Korea.
| | - Han Seul Kim
- National Institute of Supercomputing and Networking, Korea Institute of Science and Technology Information, Daejeon 34141, Korea.
| | - Hoon Ryu
- National Institute of Supercomputing and Networking, Korea Institute of Science and Technology Information, Daejeon 34141, Korea.
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12
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Fowlie J, Lichtensteiger C, Gibert M, Meley H, Willmott P, Triscone JM. Thickness-Dependent Perovskite Octahedral Distortions at Heterointerfaces. NANO LETTERS 2019; 19:4188-4194. [PMID: 31117765 PMCID: PMC6595436 DOI: 10.1021/acs.nanolett.9b01772] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/30/2019] [Revised: 05/16/2019] [Indexed: 05/23/2023]
Abstract
In this study, we analyze how the octahedral tilts and rotations of thin films of LaNiO3 and LaAlO3 grown on different substrates, determined using synchrotron X-ray diffraction-measured half-integer Bragg peaks, depend upon the total film thickness. We find a striking difference between films grown on SrTiO3 and LaAlO3 substrates which appears to stem not only from the difference in epitaxial strain state but also from the level of continuity at the heterointerface. In particular, the chemically and structurally discontinuous LaNiO3/SrTiO3 and LaAlO3/SrTiO3 interfaces cause a large variation in the octahedral network as a function of film thickness whereas the rather continuous LaNiO3/LaAlO3 interface seems to allow from just a few unit cells the formation of a stable octahedral pattern corresponding to that expected only given the applied biaxial strain.
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Affiliation(s)
- Jennifer Fowlie
- Department
of Quantum Matter Physics, University of
Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva, Switzerland
| | - Céline Lichtensteiger
- Department
of Quantum Matter Physics, University of
Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva, Switzerland
| | - Marta Gibert
- Department
of Quantum Matter Physics, University of
Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva, Switzerland
| | - Hugo Meley
- Department
of Quantum Matter Physics, University of
Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva, Switzerland
| | - Philip Willmott
- Swiss
Light Source, Paul Scherrer Institut, 5232 Villigen, Switzerland
- Physik
Institut, University of Zürich, 190 Winterthurerstrasse, 8057 Zürich, Switzerland
| | - Jean-Marc Triscone
- Department
of Quantum Matter Physics, University of
Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva, Switzerland
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13
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Li Y, Zhou J, Wu D. Metal-Insulator Transition of LaNiO 3 Films in LaNiO 3/SrIrO 3 Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2019; 11:3565-3570. [PMID: 30586994 DOI: 10.1021/acsami.8b18135] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
LaNiO3/SrIrO3 (LNO/SIO) heterostructures were deposited epitaxially on (001) SrTiO3 substrates. Transport characteristics of these LNO/SIO heterostructures were investigated as functions of LNO and SIO thickness. It has been observed that interfacing with SIO induces a metal-insulator transition at about 20 K in a 10 unit cell thick LNO film, which is otherwise metallic down to 2 K. In addition, this metal-insulator transition is irrelevant to the thickness of SIO, indicative of an interfacial effect. X-ray absorption measurements reveal an electron transfer from LNO to SIO across the interface. Meanwhile, the observation of a spin-glass-like state manifests the importance of spin-dependent scattering. The metal-insulator transition is discussed in terms of Kondo effect by random scattering from impurity spins associated with the interfacial electron transfer and the Dzyaloshinskii-Moriya interaction due to strong spin-orbit coupling inherent in 5d perovskite SIO.
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14
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Catalano S, Gibert M, Fowlie J, Íñiguez J, Triscone JM, Kreisel J. Rare-earth nickelates RNiO 3: thin films and heterostructures. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2018; 81:046501. [PMID: 29266004 DOI: 10.1088/1361-6633/aaa37a] [Citation(s) in RCA: 77] [Impact Index Per Article: 12.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
This review stands in the larger framework of functional materials by focussing on heterostructures of rare-earth nickelates, described by the chemical formula RNiO3 where R is a trivalent rare-earth R = La, Pr, Nd, Sm, …, Lu. Nickelates are characterized by a rich phase diagram of structural and physical properties and serve as a benchmark for the physics of phase transitions in correlated oxides where electron-lattice coupling plays a key role. Much of the recent interest in nickelates concerns heterostructures, that is single layers of thin film, multilayers or superlattices, with the general objective of modulating their physical properties through strain control, confinement or interface effects. We will discuss the extensive studies on nickelate heterostructures as well as outline different approaches to tuning and controlling their physical properties and, finally, review application concepts for future devices.
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Affiliation(s)
- S Catalano
- DQMP, Université de Genève, 24 Quai Ernest-Ansermet, 1211 Geneva, Switzerland
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