New Mo6 Te6 Sub-Nanometer-Diameter Nanowire Phase from 2H-MoTe2

Surfactant-Free Ultrasonication-Assisted Synthesis of 2d Tellurium Based on Metastable 1T'-MoTe2

Elemental 2D materials (E2DMs) have been attracting considerable attention owing to their chemical simplicity and excellent/exotic properties. However, the lack of robust chemical synthetic methods seriously limits their potential. Here, a surfactant-free liquid-phase synthesis of high-quality 2D tellurium is reported based on ultrasonication-assisted exfoliation of metastable 1T'-MoTe2. The as-grown 2D tellurium nanosheets exhibit excellent single crystallinity, ideal 2D morphology, surfactant-free surface, and negligible 1D by-products. Furthermore, a unique growth mechanism based on the atomic escape of Te atoms from metastable transition metal dichalcogenides and guided 2D growth in the liquid phase is proposed and verified. 2D tellurium-based field-effect transistors show ultrahigh hole mobility exceeding 1000 cm2 V-1 s-1 at room temperature attributing to the high crystallinity and surfactant-free surface, and exceptional chemical and operational stability using both solid-state dielectric and liquid-state electrical double layer. The facile ultrasonication-assisted synthesis of high-quality 2D tellurium paves the way for further exploration of E2DMs and expands the scope of liquid-phase exfoliation (LPE) methodology toward the controlled wet-chemical synthesis of functional nanomaterials.

Titanium Self-Intercalation Induced Formation of Orthogonal (1 × 1) Edge/Surface Reconstruction in 1T-TiSe2: Atomic Scale Dynamics and Mechanistic Study

Edges and surfaces play indispensable roles in affecting the chemical-physical properties of materials, particularly in two-dimensional transition metal dichalcogenides (TMDCs) with reduced dimensionality. Herein, we report a novel edge/surface structure in multilayer 1T-TiSe2, i.e., the orthogonal (1 × 1) reconstruction, induced by the self-intercalation of Ti atoms into interlayer octahedral sites of the host TiSe2 at elevated temperature. Formation dynamics of the reconstructed edge/surface are captured at the atomic level by in situ scanning transmission electron microscopy (STEM) and further validated by density functional theory (DFT), which enables the proposal of the nucleation mechanism and two growth routes (zigzag and armchair). Via STEM-electron energy loss spectroscopy (STEM-EELS), a chemical shift of 0.6 eV in Ti L3,2 is observed in the reconstructed edge/surface, which is attributed to the change of the coordination number and lattice distortion. The present work provides insights to tailor the atomic/electronic structures and properties of 2D TMDC materials.

Applications of Transmission Electron Microscopy in Phase Engineering of Nanomaterials

Phase engineering of nanomaterials (PEN) is an emerging field that aims to tailor the physicochemical properties of nanomaterials by precisely manipulating their crystal phases. To advance PEN effectively, it is vital to possess the capability of characterizing the structures and compositions of nanomaterials with precision. Transmission electron microscopy (TEM) is a versatile tool that combines reciprocal-space diffraction, real-space imaging, and spectroscopic techniques, allowing for comprehensive characterization with exceptional resolution in the domains of time, space, momentum, and, increasingly, even energy. In this Review, we first introduce the fundamental mechanisms behind various TEM-related techniques, along with their respective application scopes and limitations. Subsequently, we review notable applications of TEM in PEN research, including applications in fields such as metallic nanostructures, carbon allotropes, low-dimensional materials, and nanoporous materials. Specifically, we underscore its efficacy in phase identification, composition and chemical state analysis, in situ observations of phase evolution, as well as the challenges encountered when dealing with beam-sensitive materials. Furthermore, we discuss the potential generation of artifacts during TEM imaging, particularly in scanning modes, and propose methods to minimize their occurrence. Finally, we offer our insights into the present state and future trends of this field, discussing emerging technologies including four-dimensional scanning TEM, three-dimensional atomic-resolution imaging, and electron microscopy automation while highlighting the significance and feasibility of these advancements.

Observations of Charge-Density-Wave States in W6Te6 Wires

Determining the electronic ground state of a one-dimensional system is crucial to understanding the underlying physics of electronic behavior. Here, we demonstrate the discovery of charge-density wave states in few-wire W6Te6 arrays using scanning tunneling microscopy/spectroscopy. We directly visualize incommensurate charge orders, energy gaps with prominent coherence peaks, and the picometer-scale lattice distortion in nearly disorder-free double-wire systems, thereby demonstrating the existence of Peierls-type charge density waves. In the presence of disorder-induced charge order fluctuations, the coherence peaks resulting from phase correlation disappear and gradually transform the system into the pseudogap states. The power-law zero-bias anomaly and quasi-particle interference analysis further suggest the Tomonaga-Luttinger liquid behavior in such pseudogap region. In addition, we explicitly determined the evolution of the CDW energy gap as a function of stacking-wire numbers. The present study demonstrates the existence of electron-phonon interactions in few-wire W6Te6 that can be tuned by disorders and van der Waals stacking.

Unconventional Self-Reconstructed Trimer-like Metal Zigzag Edge of 1T-Phase Transition Metal Dichalcogenides

Undercoordination-induced slight bond contraction of the pristine edge is a conventional edge self-reconstructed pattern in two-dimensional materials that generally cannot drive the edge into its ground state. Despite reports of unconventional edge self-reconstructed patterns of 1H-phase transition metal dichalcogenides (TMDCs), there have been no reports of sister 1T-phase TMDCs. Here, we predict an unconventional (2 × 1) edge self-reconstructed pattern for 1T-TMDCs by considering 1T-TiTe₂. A novel self-reconstructed trimer-like metal zigzag edge (TMZ edge) with one-dimensional metal atomic chains and Ti₃ trimers is uncovered. Its metal triatomic 3d orbital coupling leads to Ti₃ trimerization. This TMZ edge occurs in group IV, V, and X 1T-TMDCs and has an energetic advantage far beyond conventional bond contraction. The unique triatomic synergistic effect results in better catalysis of the hydrogen evolution reaction (HER) for the 1T-TMDCs than with commercial platinum-based catalysts. This study provides a new strategy for maximizing the HER catalytic efficiency of 1T-TMDCs by using atomic edge engineering.

Vapor-Phase Indium Intercalation in van der Waals Nanofibers of Atomically Thin W6Te6 Wires

One-dimensional (1D) conducting materials are of great interest as potential building blocks for integrated nanocircuits. Ternary 1D transition-metal chalcogenides, consisting of M₆X₆ wires with intercalated A atoms (M = Mo or W; X = S, Se, or Te; A = alkali or rare metals, etc.), have attracted much attention due to their 1D metallic behavior, superconductivity, and mechanical flexibility. However, the conventional solid-state reaction usually produces micrometer-scale bulk crystals, limiting their potential use as nanoscale conductors. Here we demonstrate a versatile method to fabricate indium (In)-intercalated W₆Te₆ (In-W₆Te₆) bundles with a nanoscale thickness. We first prepared micrometer-long, crystalline bundles of van der Waals W₆Te₆ wires using chemical vapor deposition and intercalated In into the crystal via a vapor-phase reaction. Atomic-resolution electron microscopy revealed that In atoms were surrounded by three adjacent W₆Te₆ wires. First-principles calculations suggested that their wire-by-wire stacking can transform through postgrowth intercalation. Individual In-W₆Te₆ bundles exhibited metallic behavior, as theoretically predicted. We further identified the vibrational modes by combining polarized Raman spectroscopy and nonresonant Raman calculations.

Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications

The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.

In Situ Imaging of an Anisotropic Layer-by-Layer Phase Transition in Few-Layer MoTe2

Understanding the phase transition mechanisms in two-dimensional (2D) materials is a key to precisely tailor their properties at the nanoscale. Molybdenum ditelluride (MoTe₂) exhibits multiple phases at room temperature, making it a promising candidate for phase-change applications. Here, we fabricate lateral 2H-T_d interfaces with laser irradiation and probe their phase transitions from micro- to atomic scales with in situ heating in the transmission electron microscope (TEM). By encapsulating the MoTe₂ with graphene protection layers, we create an in situ reaction cell compatible with atomic resolution imaging. We find that the T_d-to-2H phase transition initiates at phase boundaries at low temperatures (200-225 °C) and propagates anisotropically along the b-axis in a layer-by-layer fashion. We also demonstrate a fully reversible 2H-T_d-2H phase transition cycle, which generates a coherent 2H lattice containing inversion domain boundaries. Our results provide insights on fabricating 2D heterophase devices with atomically sharp and coherent interfaces.

Formation of In-Plane Semiconductor-Metal Contacts in 2D Platinum Telluride by Converting PtTe2 to Pt2Te2

Monolayer PtTe₂ is a narrow gap semiconductor while Pt₂Te₂ is a metal. Here we show that the former can be transformed into the latter by reaction with vapor-deposited Pt atoms. The transformation occurs by nucleating the Pt₂Te₂ phase within PtTe₂ islands, so that a metal-semiconductor junction is formed. A flat band structure is found with the Fermi level of the metal aligning with that of the intrinsically p-doped PtTe₂. This is achieved by an interface dipole that accommodates the ∼0.2 eV shift in the work functions of the two materials. First-principles calculations indicate that the origin of the interface dipole is the atomic scale charge redistributions at the heterojunction. The demonstrated compositional phase transformation of a 2D semiconductor into a 2D metal is a promising approach for making in-plane metal contacts that are required for efficient charge injection and is of particular interest for semiconductors with large spin-orbit coupling, like PtTe₂.

Phase control and lateral heterostructures of MoTe2 epitaxially grown on graphene/Ir(111)

Engineering the growth of the different phases of two-dimensional transition metal dichalcogenides (2D-TMDs) is a promising way to exploit their potential since the phase determines their physical and chemical properties. Here, we report on the epitaxial growth of monolayer MoTe₂ on graphene on an Ir(111) substrate. Scanning tunneling microscopy and spectroscopy provide insights into the structural and electronic properties of the different polymorphic phases, which remain decoupled from the substrate due to the weak interaction with graphene. In addition, we demonstrate a great control of the relative coverage of the relevant 1T' and 1H MoTe₂ phases by varying the substrate temperature during the growth. In particular, we obtain large areas of the 1T' phase exclusively or the coexistence of both phases with different ratios.

Controlling Stoichiometry in Ultrathin van der Waals Films: PtTe2, Pt2Te3, Pt3Te4, and Pt2Te2

The platinum-tellurium phase diagram exhibits various (meta)stable van der Waals (vdW) materials that can be constructed by stacking PtTe₂ and Pt₂Te₂ layers. Monophase PtTe₂, being the thermodynamically most stable compound, can readily be grown as thin films. Obtaining the other phases (Pt₂Te₃, Pt₃Te₄, Pt₂Te₂), especially in their ultimate thin form, is significantly more challenging. We show that PtTe₂ thin films can be transformed by vacuum annealing-induced Te-loss into Pt₃Te₄- and Pt₂Te₂-bilayers. These transformations are characterized by scanning tunneling microscopy and X-ray and angle resolved photoemission spectroscopy. Once Pt₃Te₄ is formed, it is thermally stable up to 350°C. To transform Pt₃Te₄ into Pt₂Te₂, a higher annealing temperature of 400°C is required. The experiments combined with density functional theory calculations provide insights into these transformation mechanisms and show that a combination of the thermodynamic preference of Pt₃Te₄ over a phase segregation into PtTe₂ and Pt₂Te₂ and an increase in the Te-vacancy formation energy for Pt₃Te₄ compared to the starting PtTe₂ material is critical to stabilize the Pt₃Te₄ bilayer. To desorb more tellurium from Pt₃Te₄ and transform the material into Pt₂Te₂, a higher Te-vacancy formation energy has to be overcome by raising the temperature. Interestingly, bilayer Pt₂Te₂ can be retellurized by exposure to Te-vapor. This causes the selective transformation of the topmost Pt₂Te₂ layer into two layers of PtTe₂, and consequently the synthesis of e Pt₂Te₃. Thus, all known Pt-telluride vdW compounds can be obtained in their ultrathin form by carefully controlling the stoichiometry of the material.

Emerging Phases of Layered Metal Chalcogenides

Layered metal chalcogenides, as a "rich" family of 2D materials, have attracted increasing research interest due to the abundant choices of materials with diverse structures and rich electronic characteristics. Although the common metal chalcogenide phases such as 2H and 1T have been intensively studied, many other unusual phases are rarely explored, and some of these show fascinating behaviors including superconductivity, ferroelectrics, ferromagnetism, etc. From this perspective, the unusual phases of metal chalcogenides and their characteristics, as well as potential applications are introduced. First, the unusual phases of metal chalcogenides from different classes, including transition metal dichalcogenides, magnetic element-based chalcogenides, and metal phosphorus chalcogenides, are discussed, respectively. Meanwhile, their excellent properties of different unusual phases are introduced. Then, the methods for producing the unusual phases are discussed, specifically, the stabilization strategies during the chemical vapor deposition process for the unusual phase growth are discussed, followed by an outlook and discussions on how to prepare the unusual phase metal dichalcogenides in terms of synthetic methodology and potential applications.

Understanding Heterogeneities in Quantum Materials

Quantum materials are usually heterogeneous, with structural defects, impurities, surfaces, edges, interfaces, and disorder. These heterogeneities are sometimes viewed as liabilities within conventional systems; however, their electronic and magnetic structures often define and affect the quantum phenomena such as coherence, interaction, entanglement, and topological effects in the host system. Therefore, a critical need is to understand the roles of heterogeneities in order to endow materials with new quantum functions for energy and quantum information science applications. In this article, several representative examples are reviewed on the recent progress in connecting the heterogeneities to the quantum behaviors of real materials. Specifically, three intertwined topic areas are assessed: i) Reveal the structural, electronic, magnetic, vibrational, and optical degrees of freedom of heterogeneities. ii) Understand the effect of heterogeneities on the behaviors of quantum states in host material systems. iii) Control heterogeneities for new quantum functions. This progress is achieved by establishing the atomistic-level structure-property relationships associated with heterogeneities in quantum materials. The understanding of the interactions between electronic, magnetic, photonic, and vibrational states of heterogeneities enables the design of new quantum materials, including topological matter and quantum light emitters based on heterogenous 2D materials.

Noncentrosymmetric Weyl phase and topological phase transition in bulk MoTe

Ideal topological materials are those stable materials with less nontrivial band crossing near the Fermi surface and a long Fermi arc. By means of first-principles calculations, here we present that the 3D monochalcogenide molybdenum telluride (Pm-MoTe) without an inversion center shows a type-II Weyl semimetal (WSM) phase which cannot checked by symmetry index method. A total of eight Weyl points (WPs) are found in different quadrants of the Brillouin zone (BZ) of Pm-MoTe, which guarantee a long Fermi arc. The WSM phase is robust against the spin-orbit coupling (SOC) effect because of mirror symmetry and time reversal symmetry. It is also found that a topological phase transition can be tuned by strain. For different types of strain, the number of WPs can be effectively modulated to a minimum number, and their energies could be closer to Fermi level. These findings propose a promising material candidate that partly satisfies the ideal WSM criteria and extends the potential applications of the tunable topological phase.

Interlayer Coupling Dependent Discrete H → T' Phase Transition in Lithium Intercalated Bilayer Molybdenum Disulfide

In this work, the interlayer coupling dependent lithium intercalation induced phase transition in bilayer MoS₂ (BL-MoS₂) was investigated using an atomic-resolution annual dark-field scanning transmission electron microscope (ADF-STEM). It was revealed that the lithiation induced H → T' phase transition in BL-MoS₂ strongly depended on the interlayer twist angle; i.e., the H → T' phase transition occurred in well-stacked H phase BL-MoS₂ (with a twist angle of θ_t = 0°) but not for θ_t ≠ 0° BL-MoS₂. The lithiated BL-MoS₂ appeared in homophase stacking, either T'/T' or H/H (locally, no phase transformation) stacking, without any heterophase stacking such as H/T' or T'/H observed. This finding indicated the H → T' phase transition occurred via a domain-by-domain mode rather than layer-by-layer. Up to 15 types of stacking orders were experimentally identified locally in lithiated bilayer T'-MoS₂, and the formation mechanism was attributed to the discrete interlayer translation with a unit step of (m/6a, n/6b) (m, n = 0, 1, 2, 3), where a and b were the primitive lattice vectors of T'-MoS₂. Our experimental results were further corroborated by ab initio density functional theory (DFT) calculations, where the occurrence of different stacking orders can be quantitatively correlated with the variation of intercalated lithium contents into the BL-MoS₂. The present study aids in the understanding of the phase transition mechanisms in atomically thin 2D transition metal dichalcogenides (TMDCs) and will also shed light on the precisely controlled phase engineering of 2D materials for memory applications.

2D-1D mixed-dimensional heterostructures: progress, device applications and perspectives

Two-dimensional (2D) materials have attracted broad interests and been extensively exploited for a variety of functional applications. Moreover, one-dimensional (1D) atomic crystals can also be integrated into 2D templates to create mixed-dimensional heterostructures, and the versatility of combinations provides 2D-1D heterostructures plenty of intriguing physical properties, making them promising candidate to construct novel electronic and optoelectronic nanodevices. In this review, we first briefly present an introduction of relevant fabrication methods and structural configurations for 2D-1D heterostructures integration. We then discuss the emerged intriguing physics, including high optical absorption, efficient carrier separation, fast charge transfer and plasmon-exciton interconversion. Their potential applications such as electronic/optoelectronic devices, photonic devices, spintronic devices and gas sensors, are also discussed. Finally, we provide a brief perspective for the future opportunities and challenges in this emerging field.

Atomic Wires of Transition Metal Chalcogenides: A Family of 1D Materials for Flexible Electronics and Spintronics

As analogues of two-dimensional (2D) layered materials, searching for one-dimensional (1D) van der Waals wired materials as 1D Lego blocks for integration and device applications has been pursued. Motivated by the recently synthesized atomic wires of molybdenum chalcogenide, here we explored the structures and stability of 66 atomic wires of 3d, 4d, and 5d transition metal chalcogenides in the M₆X₆ stoichiometry (M = transition metal, X = chalcogen). After high-throughput first-principles calculations, 53 unprecedented and experimentally feasible M₆X₆ wires have been identified. Diverse functionalities are found in these 1D materials, including semiconductors, metals, and ferromagnets with high Young's modulus and large fracture strain. Notably, six kinds of M₆X₆ wires are robust ferromagnets with Curie temperatures up to 700 K, which can be further elevated under axial strains. Moreover, these M₆X₆ atomic wires possess high stability and resistance to oxidation, humidity, and aggregation; both merits are desirable for device applications. This large family of 1D materials with definite structures and rich properties allows atomically precise integration for flexible electronics and spintronics.

Electron beam triggered single-atom dynamics in two-dimensional materials

Controlling atomic structure and dynamics with single-atom precision is the ultimate goal in nanoscience and nanotechnology. Despite great successes being achieved by scanning tunneling microscopy (STM) over the past a few decades, fundamental limitations, such as ultralow temperature, and low throughput, significantly hinder the fabrication of a large array of atomically defined structures by STM. The advent of aberration correction in scanning transmission electron microscopy (STEM) revolutionized the field of nanomaterials characterization pushing the detection limit down to single-atom sensitivity. The sub-angstrom focused electron beam (e-beam) of STEM is capable of interacting with an individual atom, thereby it is the ideal platform to direct and control matter at the level of a single atom or a small cluster. In this article, we discuss the transfer of energy and momentum from the incident e-beam to atoms and their subsequent potential dynamics under different e-beam conditions in 2D materials, particularly transition metal dichalcogenides (TMDs). Next, we systematically discuss the e-beam triggered structural evolutions of atomic defects, line defects, grain boundaries, and stacking faults in a few representative 2D materials. Their formation mechanisms, kinetic paths, and practical applications are comprehensively discussed. We show that desired structural evolution or atom-by-atom assembly can be precisely manipulated by e-beam irradiation which could introduce intriguing functionalities to 2D materials. In particular, we highlight the recent progress on controlling single Si atom migration in real-time on monolayer graphene along an extended path with high throughput in automated STEM. These results unprecedentedly demonstrate that single-atom dynamics can be realized by an atomically focused e-beam. With the burgeoning of artificial intelligence and big data, we can expect that fully automated microscopes with real-time data analysis and feedback could readily design and fabricate large scale nanostructures with unique functionalities in the near future.

Wafer-Scale Growth of One-Dimensional Transition-Metal Telluride Nanowires

The development of bulk synthetic processes to prepare functional nanomaterials is crucial to achieve progress in fundamental and applied science. Transition-metal chalcogenide (TMC) nanowires, which are one-dimensional (1D) structures having three-atom diameters and van der Waals surfaces, have been reported to possess a 1D metallic nature with great potential in electronics and energy devices. However, their mass production remains challenging. Here, a wafer-scale synthesis of highly crystalline transition-metal telluride nanowires is demonstrated by chemical vapor deposition. The present technique enables formation of either aligned, atomically thin two-dimensional (2D) sheets or random networks of three-dimensional (3D) bundles, both composed of individual nanowires. These nanowires exhibit an anisotropic 1D optical response and superior conducting properties. The findings not only shed light on the controlled and large-scale synthesis of conductive thin films but also provide a platform for the study on physics and device applications of nanowire-based 2D and 3D crystals.

Precise Tuning of Band Structures and Electron Correlations by van der Waals Stacking of One-dimensional W6Te6 Wires

Stacking of two-dimensional (2D) van der Waals (vdW) atomic sheets has been established as a powerful approach to fabricating new materials with broad versatilities and emergent functionalities. Here we demonstrate a bottom-up approach to fabricating isolated single W₆Te₆ wires and their lateral assemblies, offering a unique platform for investigating the elegant role of vdW coupling in 1D systems with atomic precision. We find experimentally and theoretically a single W₆Te₆ wire is a 1D semiconductor with a band gap of ∼60 meV, and a semiconductor-to-metal transition takes place upon interwire vdW stacking. The metallic multiwires exhibit strong Tomonaga-Luttinger liquid characteristics with the correlation parameter g varying from g = 0.086 for biwire to g = 0.136 for six-wire assemblies, all much reduced from the Fermi liquid regime (g = 1). The present study demonstrates wire-by-wire vdW stacking is a versatile means for fabrication of 1D systems with tunable electronic properties.

1D/2D Heterostructures as Ultrathin Catalysts for Hydrogen Evolution Reaction

2D MoS₂ has emerged as a promising alternative to Pt-based catalysts for hydrogen evolution reaction (HER) due to its low cost and earth abundance. However, insufficient active sites of basal plane and poor conductivity become the foremost factors restricting the catalytic performance of MoS₂ . Here, a facile strategy is presented to enhance the HER performance of MoS₂ by converting its 2D structure into 1D/2D heterostructures of Mo₆ Te₆ /MoS_{2(1- x )} Te_{2 x} by the in situ tellurization. As-prepared 1D/2D heterostructures exhibit excellent HER performance with the Tafel slope of ≈56 mV dec^-1 (only one-third of that for pristine MoS₂ ). The enhanced HER catalytic activity is attributed to more Te/S vacancies introduced by tellurization, which serve as the active sites as suggested by theoretical calculations. Besides, the formation of highly conductive well-aligned quasi-1D Mo₆ Te₆ nanobelts facilitate charge transport in HER. Previous work provides a facile approach to construct mixed dimensional materials, and opens up a new avenue to the properties modulation of 2D transition metal chalcogenides.

Mixed-Dimensional In-Plane Heterostructures from 1D Mo6 Te6 and 2D MoTe2 Synthesized by Te-Flux-Controlled Chemical Vapor Deposition

Mixed-dimensional van der Waals heterostructures are scientifically important and practically useful because of their interesting exotic properties resulting from their novel hybrid structures. This study reports the composition- and phase-selective fabrication of low-dimensional molybdenum/tellurium (Mo/Te) compounds and the direct synthesis of mixed-dimensional in-plane 1D-2D Mo₆ Te₆ -MoTe₂ heterostructures. The composition and phase of the Mo/Te compounds are controlled by changing the Te atomic flux that is adjusted by the Te temperature. Metallic 1D Mo₆ Te₆ wires with an intrinsic 1D structure with a diameter of 3-8 nm and length of 100-300 nm are synthesized to form wire networks under low Te flux conditions, whereas the semiconducting few-layer 2H MoTe₂ films preferentially oriented along the <0001> direction are obtained under high Te flux. Under medium Te flux, the mixed-dimensional in-plane 1D-2D Mo₆ Te₆ -MoTe₂ heterostructures are synthesized in which the semiconducting few-layer 2H MoTe₂ circular domains are edge-contacted by the metallic 1D Mo₆ Te₆ wire networks. Furthermore, the present Te-flux-controlled method reveals that the 1D Mo₆ Te₆ networks change to few-layer MoTe₂ films as the Te flux increases. The in-plane 1D-2D Mo₆ Te₆ -MoTe₂ heterostructures synthesized by this method can be considered as advanced edge-contacted 2D semiconductors for high-performance 2D electronics.

Efficient growth and characterization of one-dimensional transition metal tellurides inside carbon nanotubes

Atomically thin one-dimensional (1D) van der Waals wires of transition metal monochalocogenides (TMMs) have been anticipated as promising building blocks for integrated nanoelectronics. While reliable production of TMM nanowires has eluded scientists over the past few decades, we finally demonstrated a bottom-up fabrication of MoTe nanowires inside carbon nanotubes (CNTs). Still, the current synthesis method is based on vacuum annealing of reactive MoTe₂, and limits access to a variety of TMMs. Here we report an expanded framework for high-yield synthesis of the 1D tellurides including WTe, an previously unknown family of TMMs. Experimental and theoretical analyses revealed that the choice of suitable metal oxides as a precursor provides a useful yield for their characterization. These TMM nanowires exhibit a significant optical absorption in the visible-light region. More important, electronic properties of CNTs can be tuned by encapsulating different TMM nanowires.

1D topological phases in transition-metal monochalcogenide nanowires

The Su-Schrieffer-Heeger (SSH) model is a prototypical one-dimensional (1D) diatomic lattice model for non-trivial topological phases and topological excitations. Theoretically, many variations and extensions of the SSH model have been proposed and explored to better understand the novel aspects of topological physics in low dimensions on the nanoscale. However, the outstanding challenge remains to find real nanomaterials with robust structural stability for realizing the 1D topological states. Here, we develop an extended version of the SSH model with multi-atomic bases of four, six and eight atoms and an imposed screw rotation symmetry. Furthermore, based on first-principles calculations, we demonstrate the realization of this model in transition metal monochalcogenide M6X6 (M = Mo and W; X = S, Se and Te) nanowires. The topological features of the doped M6X6 nanowires are confirmed with non-trivial edge modes and e/2 fractional charges, representative of the 1D non-trivial Zak phase. Our finding not only sheds new light on our fundamental understanding of 1D topological physics, but also significantly extends the scope of 1D topological materials that will attract immediate experimental interest, since isolated M6X6 nanowires have already been synthesized in experiments.

Transition-metal monochalcogenide nanowires: highly efficient bi-functional catalysts for the oxygen evolution/reduction reactions

Stable bi-functional electrocatalysts for the oxygen evolution/reduction reactions (OER/ORR) are desirable for rechargeable metal-air batteries and regenerative fuel cell technologies. In this study, the electronic structures and catalytic performance of recently synthesized transition-metal monochalcogenide (MX, M = Cr, Mo, W; X = S, Se, Te) nanowires (NWs) were systemically investigated based on first-principles calculations. The results demonstrate that these MX NWs can be deemed as efficient bi-functional catalysts for the OER/ORR. In particular, the low overpotentials of CrTe NWs are even superior to those of the well-known noble catalysts. To study the origin of excellent electrocatalytic performance, we establish linear relationships between the adsorption strength of intermediates and the overpotentials. A comparison study reveals that the NWs exhibit better catalytic performance than the corresponding two-dimensional materials, indicating the superiority of the unique NW structures for catalysis. These computational results offer not only a new family of bi-functional OER/ORR catalysts, but also a promising perspective for the development of stable, low-cost and highly active non-noble electrocatalysts.

Surface and interfacial study of atomic layer deposited Al2O3 on MoTe2 and WTe2

The atomic layer deposition (ALD) of high-k dielectrics could build an efficient barrier against moisture and O₂ adsorption. Such a barrier is highly needed for MoTe₂ and WTe₂ transition metal dichalcogenides because of the poor structural stability and the fast oxidization in ambient air. In situ x-ray photoelectron spectroscopy and ex situ atomic force microscopy and scanning transmission electron microscopy were employed to report a comparative study between the growth of Al₂O₃ on MoTe₂ and WTe₂ by means of traditional thermal ALD and plasma-enhanced ALD (PEALD). Similar to what has been observed on other 2D materials such as MoS₂ and Graphene, the thermal ALD results in an islanding growth of Al₂O₃ on MoTe₂ due to the dearth of dangling bonds, whereas, a uniform coverage of Al₂O₃ on WTe₂ is observed and likely contributed to the high concentration of intrinsic structural defects. The PEALD behavior is consistent between MoTe₂ and WTe₂ providing a conformal and linear growth rate (∼0.08 nm/cycle), which correlates with the creation of Te-O and metal-O nucleation sites. However, a thin layer of interfacial Mo or W oxides gradually forms, resulting from the plasma-induced damage in the topmost (1-2) layers. Attempts to enhance the Al₂O₃/MoTe₂ interfacial quality by physically evaporating an Al₂O₃ seed layer are investigated as well. However, the evaporated Al₂O₃ process causes thermal damage on MoTe₂, necessitating a more 'gentle' ALD technique for the surface passivation.

Contact Engineering High-Performance n-Type MoTe2 Transistors

Semiconducting MoTe₂ is one of the few two-dimensional (2D) materials with a moderate band gap, similar to silicon. However, this material remains underexplored for 2D electronics due to ambient instability and predominantly p-type Fermi level pinning at contacts. Here, we demonstrate unipolar n-type MoTe₂ transistors with the highest performance to date, including high saturation current (>400 μA/μm at 80 K and >200 μA/μm at 300 K) and relatively low contact resistance (1.2 to 2 kΩ·μm from 80 to 300 K), achieved with Ag contacts and AlO_x encapsulation. We also investigate other contact metals (Sc, Ti, Cr, Au, Ni, Pt), extracting their Schottky barrier heights using an analytic subthreshold model. High-resolution X-ray photoelectron spectroscopy reveals that interfacial metal-Te compounds dominate the contact resistance. Among the metals studied, Sc has the lowest work function but is the most reactive, which we counter by inserting monolayer hexagonal boron nitride between MoTe₂ and Sc. These metal-insulator-semiconductor (MIS) contacts partly depin the metal Fermi level and lead to the smallest Schottky barrier for electron injection. Overall, this work improves our understanding of n-type contacts to 2D materials, an important advance for low-power electronics.

Isolation of Single-Wired Transition-Metal Monochalcogenides by Carbon Nanotubes

The successful isolation of single layers from two-dimensional (2D) van der Waals (vdW)-layered materials has opened new frontiers in condensed matter physics and materials science. Their discovery and unique properties laid the foundation for exploring 1D counterparts. However, the isolation of 1D vdW-wired materials has thus far remained a challenge, and effective techniques are demanded. Here we report the facile synthesis of isolated transition-metal monochalcogenide MoTe nanowires by using carbon nanotubes (CNTs) as molds. Individual nanowires are perfectly separated by CNTs with a minimal interaction, enabling detailed characterization of the single wires. Transmission electron microscopy revealed unusual torsional motion of MoTe nanowires inside CNTs. Confinement of 1D vdW-wired materials to the nanotest tubes might open up possibilities for exploring unprecedented properties of the nanowires and their potential applications such as electromechanical switching devices.

van der Waals Epitaxy of High-Mobility Polymorphic Structure of Mo6Te6 Nanoplates/MoTe2 Atomic Layers with Low Schottky Barrier Height

High contact resistance between two-dimensional (2D) transition metal dichalcogenides (TMDs) and metal electrodes is a practical barrier for applications of 2D TMDs to conventional devices. A promising solution to this is polymorphic integration of 1T'-phase semimetallic and 2H-phase semiconducting TMD crystals, which can lower the Schottky barrier of the TMDs. Here, we demonstrate the van der Waals epitaxy of density-controlled single isolated 1T'-Mo₆Te₆ nanoplates on 2H-MoTe₂ atomic layers by using metal-organic chemical vapor deposition. Importantly, in situ grown 1T'-Mo₆Te₆ nanoplates significantly reduce the contact resistance of the 2H-MoTe₂ atomic layers, providing a record high mobility of 1139 cm²/V·s for Pd/1T'-Mo₆Te₆/2H-MoTe₂ back-gated field-effect transistors, along with a low Schottky barrier height ( qϕ_b) of 8.7 meV. These results lead to the possibility of ameliorating the high contact resistance faced by other TMDs and, furthermore, offer polymorphic structures for realizing higher-mobility TMD devices.

Atomic Insights into Phase Evolution in Ternary Transition-Metal Dichalcogenides Nanostructures

Phase engineering through chemical modification can significantly alter the properties of transition-metal dichalcogenides, and allow the design of many novel electronic, photonic, and optoelectronics devices. The atomic-scale mechanism underlying such phase engineering is still intensively investigated but elusive. Here, advanced electron microscopy, combined with density functional theory calculations, is used to understand the phase evolution (hexagonal 2H→monoclinic T'→orthorhombic T_d ) in chemical vapor deposition grown Mo_1-x W _x Te₂ nanostructures. Atomic-resolution imaging and electron diffraction indicate that Mo_1-x W _x Te₂ nanostructures have two phases: the pure monoclinic phase in low W-concentrated (0 < x ≤ 10 at.%) samples, and the dual phase of the monoclinic and orthorhombic in high W-concentrated (10 < x < 90 at.%) samples. Such phase coexistence exists with coherent interfaces, mediated by a newly uncovered orthorhombic phase T_d '. T_d ', preserves the centrosymmetry of T' and provides the possible phase transition path for T'→T_d with low energy state. This work enriches the atomic-scale understanding of phase evolution and coexistence in multinary compounds, and paves the way for device applications of new transition-metal dichalcogenides phases and heterostructures.

Phase-Controlled Growth of One-Dimensional Mo6Te6 Nanowires and Two-Dimensional MoTe2 Ultrathin Films Heterostructures

Controllable synthesizing of one-dimensional-two-dimensional (1D-2D) heterostructures and tuning their atomic and electronic structures is nowadays of particular interest due to the extraordinary properties and potential applications. Here, we demonstrate the temperature-induced phase-controlled growth of 1D Mo₆Te₆-2D MoTe₂ heterostructures via molecular beam epitaxy. In situ scanning tunneling microscopy study shows 2D ultrathin films are synthesized at low temperature range, while 1D nanowires gradually arise and dominate as temperature increasing. X-ray photoelectron spectroscopy confirms the good stoichiometry and scanning tunneling spectroscopy reveals the semimetallic property of grown Mo₆Te₆ nanowires. Through in situ annealing, a phase transition from 2D MoTe₂ to 1D Mo₆Te₆ is induced, thus forming a semimetal-semiconductor junction in atomic level. An upward band bending of 2H-MoTe₂ is caused by lateral hole injection from Mo₆Te₆. The work suggests a new route to synthesize 1D semimetallic transition metal chalcogenide nanowires, which could serve as ultrasmall conducting building blocks and enable band engineering in future 1D-2D heterostructure devices.

Defects and Surface Structural Stability of MoTe2 Under Vacuum Annealing

Understanding the structural stability of transition-metal dichalcogenides is necessary to avoid surface/interface degradation. In this work, the structural stability of 2H-MoTe₂ with thermal treatments up to 500 °C is studied using scanning tunneling microscopy and scanning transmission electron microscopy. On the exfoliated sample surface at room temperature, atomic subsurface donors originating from excess Te atoms are observed and presented as nanometer-sized, electronically-induced protrusions superimposed with the hexagonal lattice structure of MoTe₂. Under a thermal treatment as low as 200 °C, the surface decomposition-induced cluster defects and Te vacancies are readily detected and increase in extent with the increasing temperature. Driven by Te vacancies and thermal energy, intense 60° inversion domain boundaries form resulting in a "wagon wheel" morphology after 400 °C annealing for 15 min. Scanning tunneling spectroscopy identified the electronic states at the domain boundaries and the domain centers. To prevent extensive Te loss at higher temperatures, where Mo₆Te₆ nanowire formation and substantial desorption-induced etching effects will take place simultaneously, surface and edge passivation with a monolayer graphene coverage on MoTe₂ is tested. With this passivation strategy, the structural stability of MoTe₂ is greatly enhanced up to 500 °C without apparent structural defects.