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Chen J, Xu B, Ma H, Qi R, Bai W, Yue F, Yang P, Chen Y, Chu J, Sun L. Element Diffusion Induced Carrier Transport Enhancement in High-Performance CZTSSe Self-Powered Photodetector. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2307347. [PMID: 38191777 DOI: 10.1002/smll.202307347] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/23/2023] [Revised: 12/19/2023] [Indexed: 01/10/2024]
Abstract
Cu2ZnSn(S,Se)4 (CZTSSe) has attracted great interest in thin-film solar cells due to its excellent photoelectric performance in past decades, and recently is gradually expanding to the field of photodetectors. Here, the CZTSSe self-powered photodetector is prepared by using traditional photovoltaic device structure. Under zero bias, it exhibits the excellent performance with a maximum responsivity of 0.77 A W-1, a high detectivity of 8.78 × 1012 Jones, and a wide linear dynamic range of 103 dB. Very fast response speed with the rise/decay times of 0.576/1.792 µs, and ultra-high switching ratio of 3.54 × 105 are obtained. Comprehensive electrical and microstructure characterizations confirm that element diffusion among ITO, CdS, and CZTSSe layers not only optimizes band alignment of CdS/CZTSSe, but also suppresses the formation of interface defects. Such a suppression of interface defects and spike-like band alignment significantly inhibit carrier nonradiative recombination at interface and promote carrier transport capability. The low trap density in CZTSSe and low back contact barrier of CZTSSe/Mo could be responsible for the very fast response time of photodetector. This work definitely provides guidance for designing a high performance self-powered photodetector with high photoresponse, high switching ratio, fast response speed, and broad linear dynamic range.
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Affiliation(s)
- Jiaqi Chen
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai, 200241, P. R. China
| | - Bin Xu
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai, 200241, P. R. China
| | - Hai Ma
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai, 200241, P. R. China
| | - Ruijuan Qi
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai, 200241, P. R. China
| | - Wei Bai
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai, 200241, P. R. China
| | - Fangyu Yue
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai, 200241, P. R. China
| | - Pingxiong Yang
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai, 200241, P. R. China
| | - Ye Chen
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai, 200241, P. R. China
| | - Junhao Chu
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai, 200241, P. R. China
- Institute of Optoelectronics, Fudan University, Shanghai, 200438, P. R. China
| | - Lin Sun
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai, 200241, P. R. China
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2
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Zhao YY, Sheng SY. First principles calculation of interface interactions and photoelectric properties of ZnSe/SnSe heterostructure. PLoS One 2024; 19:e0304032. [PMID: 38787828 PMCID: PMC11125512 DOI: 10.1371/journal.pone.0304032] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/23/2024] [Accepted: 05/05/2024] [Indexed: 05/26/2024] Open
Abstract
Heterostructure engineering is an effective technology to improve photo-electronic properties of two dimensional layered semiconductors. In this paper, based on first principles method, we studied the structure, stability, energy band, and optical properties of ZnSe/SnSe heterostructure change with film layer. Results show that all heterostructures are the type-II band arrangement, and the interlayer interaction is characterized by van der Waals. The electron concentration and charge density difference implies the electron (holes) transition from SnSe to monolayer ZnSe. By increasing the layer of SnSe films, the quantum effects are weakened leading to the band gap reduced, and eventually show metal properties. The optical properties also have obvious change, the excellent absorption ability of ZnSe/SnSe heterostructures mainly near the infrared spectroscopy. These works suggest that ZnSe/SnSe heterostructure has significant potential for future optoelectronic applications.
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Affiliation(s)
- Yang-Yang Zhao
- Department of Basic Education, Criminal Investigation Police University of China, Shenyang, Liaoning, China
| | - Si-Yuan Sheng
- Department of Physics, Shenyang University of Chemical Technology, Shenyang, Liaoning, China
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3
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Cao F, Zhan S, Dai X, Cheng F, Li W, Feng Q, Huang X, Yin J, Li J, Zheng N, Wu B. Redox-Sensitive NiO x Stabilizing Perovskite Films for High-Performance Photovoltaics. J Am Chem Soc 2024; 146:11782-11791. [PMID: 38639158 DOI: 10.1021/jacs.4c00110] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/20/2024]
Abstract
Metal halide perovskite materials inherently possess imperfections, particularly under nonequilibrium conditions, such as exposure to light or heat. To tackle this challenge, we introduced stearate ligand-capped nickel oxide (NiOx), a redox-sensitive metal oxide with variable valence, into perovskite intermediate films. The integration of NiOx improved the efficiency and stability of perovskite solar cells (PSCs) by offering multifunctional roles: (1) chemical passivation for ongoing defect repair, (2) energetic passivation to bolster defect tolerance, and (3) field-effect passivation to mitigate charge accumulation. Employing a synergistic approach that tailored these three passivation mechanisms led to a substantial increase in the devices' efficiencies. The target cell (0.12 cm2) and module (18 cm2) exhibited efficiencies of 24.0 and 22.9%, respectively. Notably, the encapsulated modules maintained almost 100 and 87% of the initial efficiencies after operating for 1100 h at the maximum power point (60 °C, 50% RH) and 2000 h of damp-heat testing (85 °C, 85% RH), respectively. Outdoor real-time tests further validated the commercial viability of the NiOx-assisted PSMs. The proposed passivation strategy provides a practical and uncomplicated approach for fabricating high-efficiency and stable photovoltaics.
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Affiliation(s)
- Fang Cao
- Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province (IKKEM), State Key Laboratory for Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), National & Local Joint Engineering Research Center of Preparation Technology of Nanomaterials, College of Chemistry and Chemical Engineering, Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen 361005, China
| | - Shaoqi Zhan
- Department of Chemistry - Ångström, Uppsala University, Box 523, 751 20 Uppsala, Sweden
| | - Xinfeng Dai
- Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province (IKKEM), State Key Laboratory for Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), National & Local Joint Engineering Research Center of Preparation Technology of Nanomaterials, College of Chemistry and Chemical Engineering, Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen 361005, China
| | - Fangwen Cheng
- Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province (IKKEM), State Key Laboratory for Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), National & Local Joint Engineering Research Center of Preparation Technology of Nanomaterials, College of Chemistry and Chemical Engineering, Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen 361005, China
| | - Weixin Li
- Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province (IKKEM), State Key Laboratory for Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), National & Local Joint Engineering Research Center of Preparation Technology of Nanomaterials, College of Chemistry and Chemical Engineering, Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen 361005, China
| | - Qifan Feng
- Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province (IKKEM), State Key Laboratory for Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), National & Local Joint Engineering Research Center of Preparation Technology of Nanomaterials, College of Chemistry and Chemical Engineering, Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen 361005, China
| | - Xiaofeng Huang
- Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province (IKKEM), State Key Laboratory for Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), National & Local Joint Engineering Research Center of Preparation Technology of Nanomaterials, College of Chemistry and Chemical Engineering, Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen 361005, China
| | - Jun Yin
- Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province (IKKEM), State Key Laboratory for Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), National & Local Joint Engineering Research Center of Preparation Technology of Nanomaterials, College of Chemistry and Chemical Engineering, Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen 361005, China
| | - Jing Li
- Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province (IKKEM), State Key Laboratory for Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), National & Local Joint Engineering Research Center of Preparation Technology of Nanomaterials, College of Chemistry and Chemical Engineering, Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen 361005, China
| | - Nanfeng Zheng
- Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province (IKKEM), State Key Laboratory for Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), National & Local Joint Engineering Research Center of Preparation Technology of Nanomaterials, College of Chemistry and Chemical Engineering, Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen 361005, China
| | - Binghui Wu
- Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province (IKKEM), State Key Laboratory for Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), National & Local Joint Engineering Research Center of Preparation Technology of Nanomaterials, College of Chemistry and Chemical Engineering, Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen 361005, China
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4
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Liu Z, Li J, Liu S, Yuan Y, Chen A, Yu H, Wang S, Ding J, Fang H. Suppressing Carrier Recombination in BiVO 4/PEDOT:PSS Heterojunction for High-Performance Photodetector. J Phys Chem Lett 2024; 15:2476-2484. [PMID: 38407931 DOI: 10.1021/acs.jpclett.4c00148] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/27/2024]
Abstract
The organic-inorganic hybrid heterojunction is introduced for the first time to break through the performance bottleneck of BiVO4-based photodetectors. Through a facile solution process, a p-n heterojunction is established at the BiVO4/PEDOT:PSS interface, and the built-in electric field is designed to separate photogenerated charge carriers. The hybrid heterojunction outputs a significantly increased photocurrent, which is 24 000 times larger than that of the bare BiVO4 thin film. The photodetector shows a satisfactory performance with a responsivity (R) and specific detectivity (D*) of 107.8 mA/W and 4.13 × 1010 Jones at 482 nm illumination. In addition to the fast response speed (100 ms), the device also exhibits an impressive long-term stability with a negligible attenuation in photocurrent after more than 700 cycles. This work provides a novel strategy to suppress carrier recombination of BiVO4, and the coupling of metal oxides and organic semiconductors opens up a new avenue for fabricating high-performance photodetectors.
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Affiliation(s)
- Zhe Liu
- Center for Advanced Laser Technology, Hebei University of Technology & Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin 300401, China
- State Key Laboratory for Mechanical Behavior of Materials, School of Material Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Jiaqi Li
- State Key Laboratory for Mechanical Behavior of Materials, School of Material Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Shaojie Liu
- State Key Laboratory for Mechanical Behavior of Materials, School of Material Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Yao Yuan
- State Key Laboratory for Mechanical Behavior of Materials, School of Material Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Ainong Chen
- State Key Laboratory for Mechanical Behavior of Materials, School of Material Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Haolin Yu
- State Key Laboratory for Mechanical Behavior of Materials, School of Material Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Shouxiong Wang
- State Key Laboratory for Mechanical Behavior of Materials, School of Material Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Jie Ding
- Center for Advanced Laser Technology, Hebei University of Technology & Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin 300401, China
| | - Huajing Fang
- State Key Laboratory for Mechanical Behavior of Materials, School of Material Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
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5
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Li M, Wu C, Chen M, Weng T, Yu X, Lin K, Cao Y, Yu X, Li Z, Qiao Q, Zhang H, Zhou Y. Dipole Field-Driven Organic-Inorganic Heterojunction for Highly Sensitive Ultraviolet Photodetector. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38382473 DOI: 10.1021/acsami.3c16985] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/23/2024]
Abstract
Developing high-performance organic-inorganic ultraviolet (UV) photodetectors (PDs) has attracted considerable attention. However, this development has been hindered due to poor directional charge-transfer ratios in transport layers, excessive costs, and an ambiguous underlying mechanism. To tackle these challenges, we constructed a heterojunction of economic Mg-doped ZnO (MgZnO) nanorods and poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) [PEDOT:PSS (P:P)] that utilizes dipole field-driven spontaneous polarization to enhance photogenerated charge kinetics. As a result, the proposed heterojunction has an improved noise equivalent power of 3.16 × 10-11 W Hz-1/2), a normalized detection rate (D*) of 8.96 × 109 jones, and external quantum efficiency comparable to other ZnO-based devices. Notably, the prepared PDs showed a photocurrent of 4.8 × 10-3 μA under a faint UV light having an intensity of 1 × 10-5 W cm-2, exceeding the performance of the most state-of-the-art ZnO-based UV sensors. The introduction of Mg into ZnO is responsible for the high performance, as it causes a lattice mismatch and distortion of the Mg-doped ZnO unit cell. It results in improved dipole movement and the creation of a dipole field, accelerating the directional electron-transfer process. Using a dipole field to manipulate the migration and transport of photogenerated carriers represents a promising approach for achieving outstanding performance in UV PDs.
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Affiliation(s)
- Minghao Li
- School of Marine Engineering Equipment, Zhejiang Ocean University, Zhoushan, Zhejiang 316022, China
| | - Cheng Wu
- School of Marine Engineering Equipment, Zhejiang Ocean University, Zhoushan, Zhejiang 316022, China
| | - Mengshan Chen
- National Engineering Research Center for Marine Aquaculture, Zhejiang Ocean University, Zhoushan, Zhejiang 316022, China
| | - Tianfeng Weng
- School of Marine Engineering Equipment, Zhejiang Ocean University, Zhoushan, Zhejiang 316022, China
| | - Xuan Yu
- School of Marine Engineering Equipment, Zhejiang Ocean University, Zhoushan, Zhejiang 316022, China
- National Engineering Research Center for Marine Aquaculture, Zhejiang Ocean University, Zhoushan, Zhejiang 316022, China
| | - Kun Lin
- School of Marine Engineering Equipment, Zhejiang Ocean University, Zhoushan, Zhejiang 316022, China
| | - Yu Cao
- School of Electrical Engineering, Northeast Electric Power University, Jilin 132012, China
| | - Xiaoming Yu
- School of Marine Engineering Equipment, Zhejiang Ocean University, Zhoushan, Zhejiang 316022, China
- National Engineering Research Center for Marine Aquaculture, Zhejiang Ocean University, Zhoushan, Zhejiang 316022, China
| | - Zhenhua Li
- School of Marine Engineering Equipment, Zhejiang Ocean University, Zhoushan, Zhejiang 316022, China
| | - Qian Qiao
- School of Marine Engineering Equipment, Zhejiang Ocean University, Zhoushan, Zhejiang 316022, China
| | - Hai Zhang
- School of Marine Engineering Equipment, Zhejiang Ocean University, Zhoushan, Zhejiang 316022, China
| | - Yingtang Zhou
- National Engineering Research Center for Marine Aquaculture, Zhejiang Ocean University, Zhoushan, Zhejiang 316022, China
- Zhejiang Key Laboratory of Petrochemical Environmental Pollution Control, Marine Science and Technology College, Zhejiang Ocean University, Zhoushan, Zhejiang 316004, China
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6
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Danieli Y, Sanders E, Brontvein O, Joselevich E. Guided CdTe Nanowires Integrated into Fast Near-Infrared Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2024; 16:2637-2648. [PMID: 38174359 PMCID: PMC10797596 DOI: 10.1021/acsami.3c15797] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/22/2023] [Revised: 12/11/2023] [Accepted: 12/21/2023] [Indexed: 01/05/2024]
Abstract
Infrared photodetectors are essential devices for telecommunication and night vision technologies. Two frequently used materials groups for this technology are III-V and II-VI semiconductors, notably, mercury-cadmium-telluride alloys (MCT). However, growing them usually requires expensive substrates that can only be provided on small scales, and their large-scale production as crystalline nanostructures is challenging. In this paper, we present a two-stage process for creating aligned MCT nanowires (NWs). First, we report the growth of planar CdTe nanowires with controlled orientations on flat and faceted sapphire substrates via the vapor-liquid-solid (VLS) mechanism. We utilize this guided growth approach to parallelly integrate the NWs into fast near-infrared photodetectors with characteristic rise and fall times of ∼100 μs at room temperature. An epitaxial effect of the planar growth and the unique structure of the NWs, including size and composition, are suggested to explain the high performance of the devices. In the second stage, we show that cation exchange with mercury can be applied, resulting in a band gap narrowing of up to 55 meV, corresponding to an exchange of 2% Cd with Hg. This work opens new opportunities for creating small, fast, and sensitive infrared detectors with an engineered band gap operating at room temperature.
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Affiliation(s)
- Yarden Danieli
- Department
of Molecular Chemistry and Materials Sciences, Weizmann Institute of Science, Rehovot 76100, Israel
| | - Ella Sanders
- Department
of Molecular Chemistry and Materials Sciences, Weizmann Institute of Science, Rehovot 76100, Israel
| | - Olga Brontvein
- Chemical
Research Support, Weizmann Institute of
Science, Rehovot 76100, Israel
| | - Ernesto Joselevich
- Department
of Molecular Chemistry and Materials Sciences, Weizmann Institute of Science, Rehovot 76100, Israel
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7
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Tariq GH, Asghar G, Shifa MS, Anis-Ur-Rehman M, Ullah S, Shah ZA, Ziani I, Tawfeek AM, Sher F. Effect of copper doping on plasmonic nanofilms for high performance photovoltaic energy applications. Phys Chem Chem Phys 2023; 25:31726-31740. [PMID: 37964641 DOI: 10.1039/d3cp04332k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2023]
Abstract
In the current era, alternative but environment-friendly sources of energy have gained attention to meet the growing energy demands. In particular, the focus of research has been solar energy and using it to fulfill energy demands. Solar energy is either directly converted into electrical energy or stored for later use. Solar cells are a practical way to turn solar energy into electrical energy. Various materials are being investigated to manufacture solar cell devices that can absorb a maximum number of photons present in sunlight. The present study reports thermally evaporated in situ Cu-doped SnS photon absorber thin films with tunable physical properties. This study mainly explored the effects of changing Cu concentrations on the physical features of light absorption of SnS thin films. The thin films were formed by simultaneous resistive heating of Cu and SnS powders on glass substrates at 150 °C. The X-ray diffraction patterns revealed pure SnS thin films having orthorhombic polycrystalline crystal structures oriented preferentially along the (111) plane. Raman spectroscopy confirmed this phase purity. Photoconductivity studies showed phase dependence on Cu content that improved with increasing concentrations of Cu. The optical bandgap energy was also found to be dependent on Cu content and was observed at 1.10-1.47 eV for SnS thin films with variation in the Cu content, i.e., 0-18%. According to the hot probe method, all films displayed p-type conductivity for the substitution of Cu metal atoms. These findings demonstrated that the prepared thin films are substantial candidates as low-cost, suitably efficient, thin-film solar cells featuring environmentally-friendly active layers that absorb sunlight.
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Affiliation(s)
- Ghulam Hasnain Tariq
- Institute of Physics, Khwaja Fareed University of Engineering and Information Technology, Rahim Yar Khan 64200, Pakistan
| | - Ghulam Asghar
- Department of Physics, The University of Poonch, Rawalakot 10250, Pakistan
| | - M Shahzad Shifa
- Institute of Physics, Islamia University Bahawalpur, Bahawalpur 63100, Pakistan
| | - M Anis-Ur-Rehman
- Applied Thermal Physics Laboratory, Department of Physics, COMSATS University Islamabad, Islamabad, Pakistan
| | - Sana Ullah
- Institute of Mechanical and Manufacturing Engineering, Khwaja Fareed University of Engineering and Information Technology, Rahim Yar Khan 64200, Pakistan
| | - Zulfiqar Ali Shah
- Department of Physics, Allama Iqbal Open University, Islamabad, Pakistan
| | - Imane Ziani
- Physical Chemistry of Natural Substances and Process Research Team, Laboratory of Applied Chemistry and Environment (LCAE-CPSUNAP), Faculty of Sciences, Mohammed 1st University, Oujda 60000, Morocco
- International Society of Engineering Science and Technology, Nottingham, UK
| | - Ahmed M Tawfeek
- Department of Chemistry, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451, Saudi Arabia
| | - Farooq Sher
- Department of Engineering, School of Science and Technology, Nottingham Trent University, Nottingham NG11 8NS, UK.
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8
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Song TT, Huang WQ, Jiang KB, Chen WF, Zhou Y, Bian HY, Wang MS, Guo GC. Significant increase of the photoresponse range and conductivity for a chalcogenide semiconductor by viologen coating through charge transfer. MATERIALS HORIZONS 2023; 10:5677-5683. [PMID: 37791893 DOI: 10.1039/d3mh01241g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/05/2023]
Abstract
Widening the photoresponse range while enhancing the electrical properties of semiconductors could reduce the complexity and cost of photodetectors or increase the power conversion efficiency of solar cells. Surface doping through charge transfer with organic species is one of the most effective and widely used approaches to achieve this aim. It usually features easier preparation over other doping methods but is still limited by the low physicochemical stability and high cost of the used organic species or low improvement of electrical properties. This work shows unprecedented surface doping of semiconductors with highly stable, easily obtained, and strong electron-accepting viologen components, realizing the significant improvement of both the photoresponse range and conductivity. Coating the chalcogenide semiconductor KGaS2 with dimethyl viologen dichloride (MV) yields a charge-transfer complex (CTC) on the surface, which broadens the photoresponse range by nearly 300 nm and improves the conductivity by 5 orders of magnitude. The latter value surpasses all records obtained by surface doping through charge transfer with organic species.
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Affiliation(s)
- Tian-Tian Song
- College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, P. R. China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350608, P. R. China.
| | - Wei-Qiang Huang
- College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, P. R. China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350608, P. R. China.
| | - Kai-Bin Jiang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350608, P. R. China.
| | - Wen-Fa Chen
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350608, P. R. China.
| | - Yu Zhou
- College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, P. R. China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350608, P. R. China.
| | - Hong-Yi Bian
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350608, P. R. China.
| | - Ming-Sheng Wang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350608, P. R. China.
| | - Guo-Cong Guo
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350608, P. R. China.
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9
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Qin QP, Lu J, Sun C, Wang MS, Guo GC. Design Strategy for Improving Detection Sensitivity in a Bromoplumbate Photochromic Semiconductor. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2307333. [PMID: 37967329 DOI: 10.1002/smll.202307333] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/23/2023] [Revised: 10/22/2023] [Indexed: 11/17/2023]
Abstract
Reducing the dark current of photodetectors is an important strategy for enhancing the detection sensitivity, but hampered by the manufacturing cost due to the need for controlling the complex material composition and processing intricate interface. This study reports a new single-component photochromic semiconductor, [(HDMA)4 (Pb3 Br10 )(PhSQ)2 ]n (1, HDMA = dimethylamine cation, PhSQ = 1-(4-sulfophenyl)-4,4'-bipyridinium), by introducing a redox-active monosubstituted viologen zwitterion into inorganic semiconducting skeleton. It features yellow to green coloration after UV irradiation with the sharply dropping intrinsic conductivity of 14.6-fold, and the photodetection detection sensitivity gain successfully doubles. The reason of decreasing conductivity originates from the increasing the band gap of the inorganic semiconducting component and formation of Frenkel excitons with strong Coulomb interactions, thereby decreasing the concentration of thermally excited intrinsic carriers.
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Affiliation(s)
- Qiu-Pei Qin
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350608, P. R. China
- College of Chemistry and Materials Science, Fujian Normal University, Fuzhou, Fujian, 350007, P. R. China
| | - Jian Lu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350608, P. R. China
| | - Cai Sun
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350608, P. R. China
- Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, College of Chemistry, Fuzhou University, Fuzhou, Fujian, 350108, P. R. China
| | - Ming-Sheng Wang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350608, P. R. China
| | - Guo-Cong Guo
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350608, P. R. China
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10
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Yan C, Yang K, Zhang H, Chen Y, Liu H. High performance self-powered photodetector based on van der Waals heterojunction. NANOTECHNOLOGY 2023; 35:035203. [PMID: 37852217 DOI: 10.1088/1361-6528/ad047f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/23/2023] [Accepted: 10/11/2023] [Indexed: 10/20/2023]
Abstract
Self-powered photodetectors that do not require external power support are expected to play a key role in future photodetectors due to their low power characteristics, but achieving high responsivity remains a challenge. 2D van der Waals heterojunctions are a promising technology for high-performance self-powered photodetectors due to their excellent optical and electrical properties. Here, we fabricate a self-powered photodetector based on In2Se3/WSe2/ReS2van der Waals heterojunction self-powered photodetector. Due to the presence of ReS2layer, photocurrent is enhanced as a result of the increase in light absorption efficiency and the effective region for generating photogenerated carriers. The built-in electric field is enhanced by a negative 'back-gate voltage' along the p-n junction vertical direction generated by the electrons in the photo-generated electrons accumulation layer. Accordingly, the optical responsivity and the photoresponse speed of this heterojunction self-powered photodetector are greatly boosted. The proposed self-powered photodetector based on the In2Se3/WSe2/ReS2heterojunction exhibits a high responsivity of 438 mA W-1, which is 17 times higher compared to the In2Se3/WSe2photodetector, a self-powered current (1.1 nA) that is an order of magnitude higher than that of the In2Se3/WSe2photodetector, and a fast response time that is 250% faster. Thus the self-powered photodetector with a stronger built-in electric field and a wider depletion zone can provide a new technological support for the fabrication of high responsivity, low power consumption and high speed self-powered photodetectors based on van der Waals heterojunctions.
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Affiliation(s)
- Cong Yan
- Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China
| | - Kun Yang
- Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China
| | - Hao Zhang
- Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China
| | - Yaolin Chen
- Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China
| | - Hongxia Liu
- Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China
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11
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Wei J, Yu H, He Q, Wu D, Xie Y, Lin C. Broadband SnS/Te photodetector to long-wavelength infrared: breaking the spectrum limit through alloy engineering. OPTICS EXPRESS 2023; 31:32591-32600. [PMID: 37859059 DOI: 10.1364/oe.495083] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/08/2023] [Accepted: 09/05/2023] [Indexed: 10/21/2023]
Abstract
Materials based on group IV chalcogenides, are considered to be one of the most promising materials for high-performance, broadband photodetectors due to their wide bandgap coverage, intriguing chemical bonding and excellent physical properties. However, the reported photodetectors based on SnS are still worked at relatively narrow near-infrared band (as far as 1550 nm) hampered by the nonnegligible bandgap of 1.1-1.5 eV. Here, a novel photodetector based on Te alloyed SnS thin film was demonstrated with an ultra-broadband response up to 10.6 µm. By controlling the Te alloyed concentration in SnS increasing to 37.64%, the bandgap narrows to 0.23 eV, exhibiting a photoresponse potential at long-wavelength infrared excitation. Our results show Te-alloying can remarkably enhance the detection properties of SnS/Te photodetectors. The photoresponsivity and detectivity of 1.59 mA/W and 2.3 × 108 Jones were realized at 10.6 µm at room temperature. Moreover, the nonzero photogain was observed generated by nonlinearly increased photocurrent density, resulting in a superlinear dependency between photoresponsivity and light intensity. Our studies successfully broaden photoresponse spectrum of SnS toward the mid-infrared range for the first time. It also suggests that alloying is an effective technique for tuning the band edges of group IV chalcogenides, contributing deep implications for developing future optoelectronic applications.
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12
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Luo T, Wang J, Liu Z, Chen S, Hou J, Fang Y, Huang Y, Zhang G. Preparation of a novel Bi 9O 7.5S 6/SnS composite film with improved photoelectric properties. Dalton Trans 2023; 52:12862-12868. [PMID: 37622468 DOI: 10.1039/d3dt02186f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/26/2023]
Abstract
Atomically thin two-dimensional (2D) bismuth oxychalcogenides have been considered as promising candidates for high-speed and low-power photoelectronic devices due to their high charge carrier mobility and excellent environmental stability. However, the photoelectric performance of their bulk materials still falls short of expectations. Herein, a novel Bi9O7.5S6/SnS composite film with a type-II heterojunction was successfully prepared by combining hydrothermal and knife-coating techniques. The crystal structure, morphology, and optical properties were systematically investigated. Under 1 V bias voltage, the photocurrent of the Bi9O7.5S6/SnS composite film can be obtained as 107 μA cm-2, which is about 29.9 times and 93.9 times higher than that of bare Bi9O7.5S6 and SnS, respectively. The type-II heterojunction has played a significant role in improving the photoelectric performance of the Bi9O7.5S6/SnS composite film by facilitating the separation and transfer of photo-generated carriers. This work sheds light on the design and development of new bismuth-based composite materials for advanced photoelectric and photocatalytic applications.
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Affiliation(s)
- Tianhong Luo
- School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 201418, P. R. China.
| | - Jing Wang
- School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 201418, P. R. China.
| | - Zhanqiang Liu
- Department of Materials Chemistry, Huzhou University, 759 East Erhuan Road, Huzhou, 313000, P. R. China
| | - Shu Chen
- School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 201418, P. R. China.
| | - Jingshan Hou
- School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 201418, P. R. China.
| | - Yongzheng Fang
- School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 201418, P. R. China.
| | - Yanwei Huang
- School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 201418, P. R. China.
| | - Ganghua Zhang
- School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 201418, P. R. China.
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13
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Lee JY, Shin J, Kim K, Ju JE, Dutta A, Kim TS, Cho YU, Kim T, Hu L, Min WK, Jung HS, Park YS, Won SM, Yeo WH, Moon J, Khang DY, Kim HJ, Ahn JH, Cheng H, Yu KJ, Rogers JA. Ultrathin Crystalline Silicon Nano and Micro Membranes with High Areal Density for Low-Cost Flexible Electronics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2302597. [PMID: 37246255 DOI: 10.1002/smll.202302597] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2023] [Revised: 05/14/2023] [Indexed: 05/30/2023]
Abstract
Ultrathin crystalline silicon is widely used as an active material for high-performance, flexible, and stretchable electronics, from simple passive and active components to complex integrated circuits, due to its excellent electrical and mechanical properties. However, in contrast to conventional silicon wafer-based devices, ultrathin crystalline silicon-based electronics require an expensive and rather complicated fabrication process. Although silicon-on-insulator (SOI) wafers are commonly used to obtain a single layer of crystalline silicon, they are costly and difficult to process. Therefore, as an alternative to SOI wafers-based thin layers, here, a simple transfer method is proposed for printing ultrathin multiple crystalline silicon sheets with thicknesses between 300 nm to 13 µm and high areal density (>90%) from a single mother wafer. Theoretically, the silicon nano/micro membrane can be generated until the mother wafer is completely consumed. In addition, the electronic applications of silicon membranes are successfully demonstrated through the fabrication of a flexible solar cell and flexible NMOS transistor arrays.
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Affiliation(s)
- Ju Young Lee
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemungu, Seoul, 03722, Republic of Korea
| | - Jongwoon Shin
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemungu, Seoul, 03722, Republic of Korea
| | - Kyubeen Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemungu, Seoul, 03722, Republic of Korea
| | - Jeong Eun Ju
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemungu, Seoul, 03722, Republic of Korea
| | - Ankan Dutta
- Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Tae Soo Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemungu, Seoul, 03722, Republic of Korea
- Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seongbuk-gu, Seoul, 02792, South Korea
| | - Young Uk Cho
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemungu, Seoul, 03722, Republic of Korea
| | - Taemin Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemungu, Seoul, 03722, Republic of Korea
| | - Luhing Hu
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemungu, Seoul, 03722, Republic of Korea
| | - Won Kyung Min
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemungu, Seoul, 03722, Republic of Korea
| | - Hyun-Suh Jung
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seoul, 03722, Republic of Korea
| | - Young Sun Park
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seoul, 03722, Republic of Korea
| | - Sang Min Won
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Seongbuk-gu, Suwon, 16419, Republic of Korea
| | - Woon-Hong Yeo
- George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA
- IEN Center for Human-Centric Interfaces and Engineering at the Institute for Electronics and Nanotechnology, Georgia Institute of Technology, Atlanta, GA, 30332, USA
- Wallace H. Coulter Department of Biomedical Engineering, Parker H. Petit Institute for Bioengineering and Biosciences, Georgia Institute of Technology, Atlanta, GA, 30332, USA
- Institute for Materials, Neural Engineering Center, Institute for Robotics and Intelligent Machines, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Jooho Moon
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seoul, 03722, Republic of Korea
| | - Dahl-Young Khang
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seoul, 03722, Republic of Korea
| | - Hyun Jae Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemungu, Seoul, 03722, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemungu, Seoul, 03722, Republic of Korea
| | - Huanyu Cheng
- Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, PA, 16802, USA
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA
- Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Ki Jun Yu
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemungu, Seoul, 03722, Republic of Korea
- YU-Korea Institute of Science and Technology (KIST) Institute, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - John A Rogers
- Querrey Simpson Institute for Bioelectronics, Northwestern University, Evanston, IL, 60208, USA
- Department of Biomedical Engineering, Northwestern University, Evanston, IL, 60208, USA
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
- Department of Neurological Surgery, Northwestern University Feinberg School of Medicine, Chicago, IL, 60611, USA
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14
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Li Y, Du H. Engineering graphitic carbon nitride for next-generation photodetectors: a mini review. RSC Adv 2023; 13:25968-25977. [PMID: 37664204 PMCID: PMC10472343 DOI: 10.1039/d3ra04051h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/16/2023] [Accepted: 08/22/2023] [Indexed: 09/05/2023] Open
Abstract
Semiconductor photodetectors, as photoelectric devices using optical-electrical signal conversion for detection, are widely used in various fields such as optical communication, medical imaging, environmental monitoring, military tracking, remote sensing, etc. Compared to the conventional photodetector materials including silicon, III-V semiconductors and metal sulfides, graphitic carbon nitride (g-C3N4) as a metal-free polymeric semiconductor, has many advantages such as low-price, easy preparation, efficient visible light response, and relatively good thermal stability. In the meantime, the polymer characteristics also endow the g-C3N4 with good mechanical properties. Apart from being used for photo(electro)catalysts during the past decades, the potential use of g-C3N4 in photodetectors has attracted great research interests very recently. In this review, we first briefly introduce the structure and properties of g-C3N4 and the key performance parameters of photodetectors. Then, combining the very recent progress, the review focuses on the active materials, fabrication methods and performance enhancement strategies for g-C3N4 based photodetectors. The existing challenges are discussed and the future development of g-C3N4 based photodetectors is also forecasted.
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Affiliation(s)
- Yuan Li
- School of Telecommunications Engineering, Hubei Science and Technology College Wuhan 430074 China
- National Engineering Research Center of Fiber Optic Sensing Technology and Networks, Wuhan University of Technology Wuhan 430074 China
| | - Haiwei Du
- School of Materials Science and Engineering, Anhui University Hefei 230601 China
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15
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Jaiswal S, Fathi-Hafshejani P, Yakupoglu B, Boebinger MG, Azam N, Unocic RR, Hamilton MC, Mahjouri-Samani M. Wafer-Scale Synthesis of 2D Materials by an Amorphous Phase-Mediated Crystallization Approach. ACS APPLIED MATERIALS & INTERFACES 2023; 15:39697-39706. [PMID: 37579298 DOI: 10.1021/acsami.3c06009] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/16/2023]
Abstract
The interest in the wafer-scale growth of two-dimensional (2D) materials, including transition metal dichalcogenides (TMDCs), has been rising for transitioning from lab-scale devices to commercial-scale systems. Among various synthesis techniques, physical vapor deposition, such as pulsed laser deposition (PLD), has shown promise for the wafer-scale growth of 2D materials. However, due to the high volatility of chalcogen atoms (e.g., S and Se), films deposited by PLD usually suffer from a lack of stoichiometry and chalcogen deficiency. To mitigate this issue, excess chalcogen is necessary during the deposition, which results in problems like uniformity or not being repeatable. This study demonstrates a condensed-phase or amorphous phase-mediated crystallization (APMC) approach for the wafer-scale synthesis of 2D materials. This method uses a room-temperature PLD process for the deposition and formation of amorphous precursors with controlled thicknesses, followed by a post-deposition crystallization process to convert the amorphous materials to crystalline structures. This approach maintains the stoichiometry of the deposited materials throughout the deposition and crystallization process and enables the large-scale synthesis of crystalline 2D materials (e.g., MoS2 and WSe2) on Si/SiO2 substrates, which is critical for future wafer-scale electronics. We show that the thickness of the layers can be digitally controlled by the number of laser pulses during the PLD phase. Optical spectroscopy is used to monitor the crystallization dynamics of amorphous layers as a function of annealing temperature. The crystalline quality, domain sizes, and the number of layers were explored using nanoscale and atomistic characterization (e.g., AFM, STEM, and EDS) along with electrical characterization to explore process-structure-performance relationships. This growth technique is a promising method that could potentially be adopted in conventional semiconductor industries for wafer-scale manufacturing of next-generation electronic and optoelectronic devices.
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Affiliation(s)
- Suman Jaiswal
- Department of Electrical and Computer Engineering, Auburn University, Auburn, Alabama 36849, United States
| | - Parvin Fathi-Hafshejani
- Department of Electrical and Computer Engineering, Auburn University, Auburn, Alabama 36849, United States
| | - Baha Yakupoglu
- Department of Electrical and Computer Engineering, Auburn University, Auburn, Alabama 36849, United States
| | - Matthew G Boebinger
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Nurul Azam
- Department of Electrical and Computer Engineering, Auburn University, Auburn, Alabama 36849, United States
| | - Raymond R Unocic
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Michael C Hamilton
- Department of Electrical and Computer Engineering, Auburn University, Auburn, Alabama 36849, United States
| | - Masoud Mahjouri-Samani
- Department of Electrical and Computer Engineering, Auburn University, Auburn, Alabama 36849, United States
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16
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Zhang B, Chang Y, Han Z, Wang W, Luo B, Zhai W, Wang J. Improved Dual-Polarity Response via Pyro-phototronic Effect for Filterless Visible Light Communication. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2207718. [PMID: 36897011 DOI: 10.1002/smll.202207718] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/09/2022] [Revised: 02/10/2023] [Indexed: 06/15/2023]
Abstract
Dual-polarity response photodetectors (PDs) take full advantage of the directivity of the photocurrent to identify optical information. The dual-polarity signal ratio, a key parameter that represents the equilibrium degree of responses to different lights, is proposed for the first time. The synchronous enhancement of dual-polarity photocurrents and the amelioration of the dual-polarity signal ratio are beneficial to the practical applications. Herein, based on the selective light absorption and energy band structure design, a self-powered CdS/PEDOT:PSS/Au heterojunction PD consisting of a p-n junction and a Schottky junction exhibits unique wavelength-dependent dual-polarity response, where the photocurrent is negative and positive in the short and long wavelength regions, respectively. More importantly, the pyro-phototronic effect inside the CdS layer significantly improves the dual-polarity photocurrents with the maximum enhancement factors of 120%, 343%, 1167%, 1577%, and 1896% at 405, 450, 532, 650, and 808 nm, respectively. Furthermore, the dual-polarity signal ratio tends to 1:1 due to different degrees of the enhancement. This work provides a novel design strategy for dual-polarity response PDs with a simple working principle and improved performance, which can supply a substitution for two traditional PDs in the filterless visible light communication (VLC) system.
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Affiliation(s)
- Boyong Zhang
- MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Yu Chang
- MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Zhuokun Han
- MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Wencan Wang
- MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Bingcheng Luo
- MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Wei Zhai
- MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Jianyuan Wang
- MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
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17
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Long Y, Zhang Z, Yang X, Liu Y, Luo G, Zhang J, Li W. Enhanced Spectral Response of ZnO-Nanorod-Array-Based Ultraviolet Photodetectors by Alloying Non-Isovalent Cu-O with CuAlO 2 P-Type Layer. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13091472. [PMID: 37177017 PMCID: PMC10180443 DOI: 10.3390/nano13091472] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/18/2023] [Revised: 04/11/2023] [Accepted: 04/17/2023] [Indexed: 05/15/2023]
Abstract
CuAlO2 was synthesized by a hydrothermal method, in which the Cu-O dimers were incorporated by simply altering the ratio of the reactants and the temperature. The incorporation process increases the grain size in CuAlO2, and modulates the work function and binding energies for CuAlO2 due to the partial substitution of Cu+ 3d10 with Cu2+ 3d9 orbitals in the valence band maximum by alloying non-isovalent Cu-O with a CuAlO2 host. Based on the ZnO nanorod arrays (NRs) ultraviolet photodetector, CuAlO2/Cu-O fabricated by the low-cost drop-coating method was used as the p-type hole transport layer. The incorporation of the Cu-O clusters into CuAlO2 lattice to enhance the conductivity of CuAlO2 is an effective way for improving ZnO NRs/CuAlO2 device performance. The photodetectors exhibit significant diode behavior, with a rectification ratio approaching 30 at ±1 V, and a dark saturation current density 0.81 mA cm-2. The responsivity of the ZnO-NRs-based UV photodetector increases from 13.2 to 91.3 mA/W at 0 V bias, with an increase in the detectivity from 2.35 × 1010 to 1.71 × 1011 Jones. Furthermore, the ZnO NRs/[CuAlO2/Cu-O] photodetector exhibits a maximum responsivity of 5002 mA/W at 1.5 V bias under 375 nm UV illumination.
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Affiliation(s)
- Yuchen Long
- College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China
| | - Ziling Zhang
- College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China
| | - Xiutao Yang
- College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China
| | - Yang Liu
- College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China
| | - Guangcan Luo
- School of Materials Science and Engineering, Guizhou Minzu University, Guiyang 550025, China
| | - Jingquan Zhang
- College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China
| | - Wei Li
- College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China
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18
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Han Y, Wang Y, Xia D, Fu S, Gao C, Ma J, Xu H, Li B, Shen A, Liu Y. Rapid Response Solar Blind Deep UV Photodetector with High Detectivity Based On Graphene:N/βGa 2 O 3 :N/GaN p-i-n Heterojunction Fabricated by a Reversed Substitution Growth Method. SMALL METHODS 2023:e2300041. [PMID: 37096880 DOI: 10.1002/smtd.202300041] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/09/2023] [Revised: 03/23/2023] [Indexed: 05/03/2023]
Abstract
This work reports a high-detectivity solar-blind deep ultraviolet photodetector with a fast response speed, based on a nitrogen-doped graphene/βGa2 O3 /GaN p-i-n heterojunction. The i layer of βGa2 O3 with a Fermi level lower than the central level of the forbidden band of 0.2 eV is obtained by reversed substitution growth with oxygen replacing nitrogen in the GaN matrix, indicating the majority carrier is hole. X-ray diffractometershows that the transformation of GaN into βGa2 O3 with (-201) preferred orientation at temperature above 900 °C in an oxygen ambient. The heterojunction shows enhanced self-powered solar blind detection ability with a response time of 3.2 µs (rise)/0.02 ms (delay) and a detectivity exceeding 1012 Jones. Under a reverse bias of -5 V, the photoresponsivity is 8.3 A W-1 with a high Ilight /Idark ratio of over 106 and a detectivity of ≈9 × 1014 Jones. The excellent performance of the device is attributed to 1) the continuous conduction band without a potential energy barrier, 2) the larger built-in potential in the heterojunction because of the downward shift of Fermi energy level in β-Ga2 O3 , and 3) an enhanced built-in electric field in the βGa2 O3 due to introducing p-type graphene with a high hole concentration of up to ≈1020 cm-3 .
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Affiliation(s)
- Yurui Han
- Key Laboratory of UV Light Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Yuefei Wang
- Key Laboratory of UV Light Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Danyang Xia
- Key Laboratory of UV Light Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Shihao Fu
- Key Laboratory of UV Light Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Chong Gao
- Key Laboratory of UV Light Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Jiangang Ma
- Key Laboratory of UV Light Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Haiyang Xu
- Key Laboratory of UV Light Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Bingsheng Li
- Key Laboratory of UV Light Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Aidong Shen
- Department of Electrical Engineering, The City College of New York, New York, NY, 10031, USA
| | - Yichun Liu
- Key Laboratory of UV Light Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, China
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19
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Liu B, Shen H, Zhang J, Chen D, Mao W. CuSCN/Si heterojunction near-infrared photodetector based on micro/nano light-trapping structure. NANOTECHNOLOGY 2023; 34:235501. [PMID: 36857771 DOI: 10.1088/1361-6528/acc039] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/04/2022] [Accepted: 02/28/2023] [Indexed: 06/18/2023]
Abstract
In this paper, high-performance CuSCN/Si heterojunction near-infrared photodetectors were successfully prepared using nanoscale light-trapping optical structures. Various light-trapping structures of ortho-pyramids, inverted pyramids and silicon nanowires were prepared on silicon substrates. Then, CuSCN films were spin-coated on silicon substrates with high crystalline properties for the assembly of CuSCN/Si photodetectors. Their reflectance spectra and interfacial passivation properties were characterized, demonstrating their superiority of light-trapping structures in high light response. Under the irradiation of 980 nm near-infrared light, a maximum responsivity of 2.88 A W-1at -4 V bias and a specific detectivity of 5.427 × 1010Jones were obtained in the CuSCN/Si heterojunction photodetectors prepared on planner silicon due to 3.6 eV band gap of CuSCN. The substrates of the light-trapping structure were then applied to the CuSCN/Si heterojunction photodetectors. A maximum responsivity of 10.16 A W-1and a maximum specific detectivity of 1.001 × 1011Jones were achieved under the 980 nm near-infrared light irradiation and -4 V bias, demonstrating the advanced performance of CuSCN/Si heterojunction photodetectors with micro-nano light-trapping substrates in the field of near-infrared photodetection compared to other silicon-based photodetectors.
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Affiliation(s)
- Biao Liu
- College of Materials Science & Technology, Jiangsu Provincial Key Laboratory of Materials and Technology for Energy Conversion, Nanjing University of Aeronautics & Astronautics, 29 Jiangjun Avenue, Nanjing 211106, People's Republic of China
| | - Honglie Shen
- College of Materials Science & Technology, Jiangsu Provincial Key Laboratory of Materials and Technology for Energy Conversion, Nanjing University of Aeronautics & Astronautics, 29 Jiangjun Avenue, Nanjing 211106, People's Republic of China
- Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou University, Changzhou, 213164, People's Republic of China
| | - Jingzhe Zhang
- College of Materials Science & Technology, Jiangsu Provincial Key Laboratory of Materials and Technology for Energy Conversion, Nanjing University of Aeronautics & Astronautics, 29 Jiangjun Avenue, Nanjing 211106, People's Republic of China
| | - Dewen Chen
- College of Materials Science & Technology, Jiangsu Provincial Key Laboratory of Materials and Technology for Energy Conversion, Nanjing University of Aeronautics & Astronautics, 29 Jiangjun Avenue, Nanjing 211106, People's Republic of China
| | - Weibiao Mao
- College of Materials Science & Technology, Jiangsu Provincial Key Laboratory of Materials and Technology for Energy Conversion, Nanjing University of Aeronautics & Astronautics, 29 Jiangjun Avenue, Nanjing 211106, People's Republic of China
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20
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Bai X, Gao W, Cai Y, Bai Z, Qi Y, Yan B, Wang Y, Lu Z, Ding J. Advanced Stretchable Photodetectors: Strategies, Materials and Devices. Chemistry 2023; 29:e202203022. [PMID: 36367372 DOI: 10.1002/chem.202203022] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/27/2022] [Revised: 10/28/2022] [Accepted: 11/11/2022] [Indexed: 11/13/2022]
Abstract
Past decades have witnessed the generation of new stretchable photodetectors in electronic eyes, health sensing, wearable devices, intelligent monitoring and other fields. Stretchable devices require not only outstanding performance but also excellent flexibility, adaptability and stability. Innovative strategies have been proposed to realize the stretchability of devices. In addition, novel functional materials including zero-dimensional nanomaterials, one-dimensional inorganic nanomaterials, two-dimensional layered materials, organic materials, and organic-inorganic composite materials with excellent properties are emerging to continuously improve the performance of devices. Here, the recent research progress of stretchable photodetectors in terms of both various design methods and functional materials is outlined. The optical performance and stretchable properties are also comprehensively reviewed. Finally, a summary and the challenges associated with the application of stretchable photodetectors are presented.
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Affiliation(s)
- Xinyao Bai
- Center for Advanced Laser Technology, Hebei University of Technology, Tianjin, 300401, P. R. China.,Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin, 300401, P. R. China
| | - Wanxiao Gao
- Center for Advanced Laser Technology, Hebei University of Technology, Tianjin, 300401, P. R. China.,Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin, 300401, P. R. China
| | - Yunpeng Cai
- Center for Advanced Laser Technology, Hebei University of Technology, Tianjin, 300401, P. R. China.,Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin, 300401, P. R. China
| | - Zhenxu Bai
- Center for Advanced Laser Technology, Hebei University of Technology, Tianjin, 300401, P. R. China.,Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin, 300401, P. R. China.,MQ Photonics Research Centre, Department of Physics and Astronomy, Macquarie University, Sydney, NSW, 2109, Australia
| | - Yaoyao Qi
- Center for Advanced Laser Technology, Hebei University of Technology, Tianjin, 300401, P. R. China.,Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin, 300401, P. R. China
| | - Bingzheng Yan
- Center for Advanced Laser Technology, Hebei University of Technology, Tianjin, 300401, P. R. China.,Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin, 300401, P. R. China
| | - Yulei Wang
- Center for Advanced Laser Technology, Hebei University of Technology, Tianjin, 300401, P. R. China.,Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin, 300401, P. R. China
| | - Zhiwei Lu
- Center for Advanced Laser Technology, Hebei University of Technology, Tianjin, 300401, P. R. China.,Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin, 300401, P. R. China
| | - Jie Ding
- Center for Advanced Laser Technology, Hebei University of Technology, Tianjin, 300401, P. R. China.,Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin, 300401, P. R. China
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21
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Song X, Jian Y, Wang X, Chen J, Shan Q, Zhang S, Chen Z, Chen X, Zeng H. Hybrid mixed-dimensional WTe 2/CsPbI 3perovskite heterojunction for high-performance photodetectors. NANOTECHNOLOGY 2023; 34:195201. [PMID: 36753757 DOI: 10.1088/1361-6528/acba1c] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/03/2022] [Accepted: 02/07/2023] [Indexed: 06/18/2023]
Abstract
Perovskites have showed significant potential for the application in photodetectors due to their outstanding electrical and optical properties. Integrating two-dimensional (2D) materials with perovskites can make full use of the high carrier mobility of 2D materials and strong light absorption of perovskite to realize excellent optoelectrical properties. Here, we demonstrate a photodetector based on the WTe2/CsPbI3heterostructure. The quenching and the shortened lifetime of photoluminescence (PL) for CsPbI3perovskite confirms the efficient charge transfer at the WTe2/CsPbI3heterojunction. After coupled with WTe2, the photoresponsivity of the CsPbI3photodetector is improved by almost two orders of magnitude due to the high-gain photogating effect. The WTe2/CsPbI3heterojunction photodetector reveals a large responsivity of 1157 A W-1and a high detectivity of 2.1 × 1013Jones. The results pave the way for the development of high-performance optoelectronic devices based on 2D materials/perovskite heterojunctions.
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Affiliation(s)
- Xiufeng Song
- MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
| | - Yuxuan Jian
- MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
| | - Xusheng Wang
- MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
| | - Jiawei Chen
- MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
| | - Qingsong Shan
- MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
| | - Shengli Zhang
- MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
| | - Zhanyang Chen
- Shangdong Gemei Tungsten & Molybdenum Material Co. LTD, Weihai 265222, People's Republic of China
| | - Xiang Chen
- MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
| | - Haibo Zeng
- MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
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22
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Tankov I, Yankova R, Mihov D. Influence of the coordination metal on the thermal properties of double selenates: Theoretical insights and experimental study. J Mol Struct 2023. [DOI: 10.1016/j.molstruc.2022.134411] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
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23
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Xue X, Ling C, Ji H, Wang J, Wang C, Lu H, Liu W. Self-Powered and Broadband Bismuth Oxyselenide/p-Silicon Heterojunction Photodetectors with Low Dark Current and Fast Response. ACS APPLIED MATERIALS & INTERFACES 2023; 15:5411-5419. [PMID: 36655912 DOI: 10.1021/acsami.2c15947] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Inorganic nanomaterials such as graphene, black phosphorus, and transition metal dichalcogenides have attracted great interest in developing optoelectronic devices due to their efficient conversion between light and electric signals. However, the zero band gap nature, the unstable chemical properties, and the low electron mobility constrained their wide applications. Bismuth oxyselenide (Bi2O2Se) is gradually showing great research significance in the optoelectronic field. Here, we develop a bismuth oxyselenide/p-silicon (Bi2O2Se/p-Si) heterojunction and design a self-powered and broadband Bi2O2Se/p-Si heterojunction photodetector with an ultrafast response (2.6 μs) and low dark current (10-10 A without gate voltage regulation). It possesses a remarkable detectivity of 4.43 × 1012 cm Hz1/2 W-1 and a self-powered photoresponse characteristic at 365-1550 nm (ultraviolet-near-infrared). Meanwhile, the Bi2O2Se/p-Si heterojunction photodetector also shows high stability and repeatability. It is expected that the proposed Bi2O2Se/p-Si heterojunction photodetector will expand the applications of Bi2O2Se in practical integrated circuits in the field of material science, energy development, optical imaging, biomedicine, and other applications.
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Affiliation(s)
- Xin Xue
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, China
| | - Cuicui Ling
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, China
| | - Hongguang Ji
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, China
| | - Jingyao Wang
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, China
| | - Chuanke Wang
- Laser Fusion Research Center, Chinese Academy of Engineering Physics, Mianyang 621900, People's Republic of China
| | - Haipeng Lu
- National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Wenpeng Liu
- Harvard Medical School, Harvard University, Boston, Massachusetts 02115, United States
- Division of Engineering in Medicine and Renal Division, Department of Medicine, Brigham Women's Hospital, Boston, Massachusetts 02115, United States
- State Key Laboratory of Precision Measuring Technology and Instruments, College of Precision Instrument and Opto-Electronics Engineering, Tianjin University, Tianjin 300072, China
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24
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Xu M, Xu Z, Sun Z, Chen W, Wang L, Liu Y, Wang Y, Du X, Pan S. Surface Engineering in SnO 2/Si for High-Performance Broadband Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2023; 15:3664-3672. [PMID: 36598173 DOI: 10.1021/acsami.2c20073] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Silicon-based photodetectors are important optoelectronic devices in many fields. Many investigations have been conducted to improve the performance of silicon-based photodetectors, such as spectral responsivity and sensitivity in the ultraviolet band. In this study, we combine the surface structure engineering of silicon with wide-bandgap semiconductor SnO2 films to realize textured Si-based heterojunction photodetectors. The obtained SnO2/T-Si photodetectors exhibit high responsivity ranging from ultraviolet to near-infrared light. Under a bias voltage of 1 V, SnO2/T-Si photodetectors (PDs) with an inverted pyramid texture show the best performance, and the typical responsivities to ultraviolet, visible, and near-infrared light are 0.512, 0.538, 1.88 (800 nm, 67.7 μW/cm2) A/W@1 V, respectively. The photodetectors exhibit short rise and decay times of 18.07 and 29.16 ms, respectively. Our results demonstrate that SnO2/T-Si can serve as a high-performance broadband photodetector.
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Affiliation(s)
- Miao Xu
- Department of Physics, School of Physics and Materials Science, Guangzhou University, Guangzhou510006, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong523808, P. R. China
| | - Zhihao Xu
- Department of Physics, School of Physics and Materials Science, Guangzhou University, Guangzhou510006, People's Republic of China
- Huangpu Research & Graduate School of Guangzhou University, Sino-Singapore Guangzhou Knowledge City, Huangpu District, Guangzhou510555, People's Republic of China
| | - Zongheng Sun
- Songshan Lake Materials Laboratory, Dongguan, Guangdong523808, P. R. China
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing100190, P. R. China
| | - Wei Chen
- Songshan Lake Materials Laboratory, Dongguan, Guangdong523808, P. R. China
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing100190, P. R. China
| | - Linqiang Wang
- Department of Physics, School of Physics and Materials Science, Guangzhou University, Guangzhou510006, People's Republic of China
- Huangpu Research & Graduate School of Guangzhou University, Sino-Singapore Guangzhou Knowledge City, Huangpu District, Guangzhou510555, People's Republic of China
| | - Yaoping Liu
- Songshan Lake Materials Laboratory, Dongguan, Guangdong523808, P. R. China
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing100190, P. R. China
| | - Yan Wang
- Songshan Lake Materials Laboratory, Dongguan, Guangdong523808, P. R. China
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing100190, P. R. China
| | - Xiaolong Du
- Songshan Lake Materials Laboratory, Dongguan, Guangdong523808, P. R. China
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing100190, P. R. China
| | - Shusheng Pan
- Department of Physics, School of Physics and Materials Science, Guangzhou University, Guangzhou510006, People's Republic of China
- Huangpu Research & Graduate School of Guangzhou University, Sino-Singapore Guangzhou Knowledge City, Huangpu District, Guangzhou510555, People's Republic of China
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25
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Zhao D, Huang R, Gan JM, Shen QD. Photoactive Nanomaterials for Wireless Neural Biomimetics, Stimulation, and Regeneration. ACS NANO 2022; 16:19892-19912. [PMID: 36411035 DOI: 10.1021/acsnano.2c08543] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Nanomaterials at the neural interface can provide the bridge between bioelectronic devices and native neural tissues and achieve bidirectional transmission of signals with our brain. Photoactive nanomaterials, such as inorganic and polymeric nanoparticles, nanotubes, nanowires, nanorods, nanosheets or related, are being explored to mimic, modulate, control, or even substitute the functions of neural cells or tissues. They show great promise in next generation technologies for the neural interface with excellent spatial and temporal accuracy. In this review, we highlight the discovery and understanding of these nanomaterials in precise control of an individual neuron, biomimetic retinal prosthetics for vision restoration, repair or regeneration of central or peripheral neural tissues, and wireless deep brain stimulation for treatment of movement or mental disorders. The most intriguing feature is that the photoactive materials fit within a minimally invasive and wireless strategy to trigger the flux of neurologically active molecules and thus influences the cell membrane potential or key signaling molecule related to gene expression. In particular, we focus on worthy pathways of photosignal transduction at the nanomaterial-neural interface and the behavior of the biological system. Finally, we describe the challenges on how to design photoactive nanomaterials specific to neurological disorders. There are also some open issues such as long-term interface stability and signal transduction efficiency to further explore for clinical practice.
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Affiliation(s)
- Di Zhao
- Department of Polymer Science and Engineering and Key Laboratory of High-Performance Polymer Materials and Technology of MOE, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
- Institute of Brain Science and Disease, School of Basic Medicine, Qingdao University, Qingdao, Shandong 266001, China
| | - Rui Huang
- Department of Polymer Science and Engineering and Key Laboratory of High-Performance Polymer Materials and Technology of MOE, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
| | - Jia-Min Gan
- Department of Polymer Science and Engineering and Key Laboratory of High-Performance Polymer Materials and Technology of MOE, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
| | - Qun-Dong Shen
- Department of Polymer Science and Engineering and Key Laboratory of High-Performance Polymer Materials and Technology of MOE, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
- Medical School of Nanjing University, Nanjing 210008, China
- State Key Laboratory of Analytical Chemistry for Life Science, Nanjing 210023, China
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26
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Tian Y, Li J, Wang A, Shang Z, Jian H, Li Q, Bai S, Yan X. Long-range ordered amino acid assemblies exhibit effective optical-to-electrical transduction and stable photoluminescence. Acta Biomater 2022; 154:135-144. [PMID: 36216126 DOI: 10.1016/j.actbio.2022.09.073] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/27/2022] [Revised: 09/07/2022] [Accepted: 09/29/2022] [Indexed: 12/14/2022]
Abstract
Bio-endogenous peptide molecules are ideal components for fabrication of biocompatible and environmentally friendly semiconductors materials. However, to date, their applications have been limited due to the difficulty in obtaining stable, high-performance devices. Herein, simple amino acid derivatives fluorenylmethoxycarbonyl-leucine (Fmoc-L) and fluorenylmethoxycarbonyl-tryptophan (Fmoc-W) are utilized to form long-range ordered supramolecular nanostructures by tight aromatic stacking and extensive hydrogen bonding with mechanical, electrical and optical properties. For the first time, without addition of any photosensitizers, pure Fmoc-L microbelts and Fmoc-W microwires exhibit Young's modulus up to 28.79 and 26.96 GPa, and unprecedently high values of photocurrent responses up to 2.2 and 2.3 μA/cm2, respectively. Meanwhile, Fmoc-W microwires with stable blue fluorescent emission under continuous excitation are successfully used as LED phosphors. Mechanism analysis shows that these two amino acids derivatives firstly formed dimers to reduce the bandgap, then further assemble into bioinspired semiconductor materials using the dimers as the building blocks. In this process, aromatic residues of amino acids are more conducive to the formation of semiconducting characteristics than fluorenyl groups. STATEMENT OF SIGNIFICANCE: Long-range ordered amino acid derivative assemblies with mechanical, electrical and optical properties were fabricated by a green and facile biomimetic strategy. These amino acid assemblies have Young's modulus comparable to that of concrete and exhibit typical semiconducting characteristics. Even without the addition of any photosensitizer, pure amino acid assemblies can still produce a strong photocurrent response and an unusually stable photoluminescence. The results suggest that amino acid structures with hydrophilic C-terminal and aromatic residues are more conducive to the formation of semiconducting characteristics. This work unlocks the potential for amino acid molecules to self-assemble into high-performance bioinspired semiconductors, providing a reference for customized development of biocompatible and environmentally friendly semiconductor materials through rational molecular design.
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Affiliation(s)
- Yajie Tian
- State Key Laboratory of Biochemical Engineering, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190, China
| | - Jieling Li
- State Key Laboratory of Biochemical Engineering, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190, China.
| | - Anhe Wang
- State Key Laboratory of Biochemical Engineering, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190, China
| | - Zhixin Shang
- College of Textile and Clothing, Dezhou University, Dezhou 253023, China
| | - Honglei Jian
- State Key Laboratory of Biochemical Engineering, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190, China
| | - Qi Li
- State Key Laboratory of Biochemical Engineering, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190, China
| | - Shuo Bai
- State Key Laboratory of Biochemical Engineering, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190, China.
| | - Xuehai Yan
- State Key Laboratory of Biochemical Engineering, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190, China.
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27
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Seo J, Kim YJ, Yoo H. Zero Bias Operation: Photodetection Behaviors Obtained by Emerging Materials and Device Structures. MICROMACHINES 2022; 13:2089. [PMID: 36557389 PMCID: PMC9781907 DOI: 10.3390/mi13122089] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/31/2022] [Revised: 11/24/2022] [Accepted: 11/24/2022] [Indexed: 06/17/2023]
Abstract
Zero-biased photodetectors have desirable characteristics for potentially next-generation devices, including high efficiency, rapid response, and low power operation. In particular, the detector efficiency can be improved simply by changing the electrode contact geometry or morphological structure of materials, which give unique properties such as energy band bending, photo absorbance and electric field distribution. In addition, several combinations of materials enable or disable the operation of selective wavelengths of light detection. Herein, such recent progresses in photodetector operating at zero-bias voltage are reviewed. Considering the advantages and promises of these low-power photodetectors, this review introduces various zero-bias implementations and reviews the key points.
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Affiliation(s)
- Juhyung Seo
- Department of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea
| | - Yeong Jae Kim
- Korea Institute of Ceramic Engineering and Technology, Ceramic Total Solution Center, Icheon 17303, Republic of Korea
| | - Hocheon Yoo
- Department of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea
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28
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Fu EB, Liu Y, Hou XR, Feng Y, Yang CL, Shao Y. Visible-Light-Stimulated Synaptic Phototransistors Based on CdSe Quantum Dot/In-Ga-Zn-O Hybrid Channels. NANOSCALE RESEARCH LETTERS 2022; 17:102. [PMID: 36301360 PMCID: PMC9613833 DOI: 10.1186/s11671-022-03739-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/01/2022] [Accepted: 10/05/2022] [Indexed: 05/15/2023]
Abstract
Light-stimulated synaptic devices are promising candidates for the development of artificial intelligence systems because of their unique properties, which include broad bandwidths, low power consumption, and superior parallelism. The key to develop such devices is the realization of photoelectric synaptic behavior in them. In this work, visible-light-stimulated synaptic transistors based on CdSe quantum dot (CdSe QD)/amorphous In-Ga-Zn-O hybrid channels are proposed. This design can not only improve the charge separation efficiency of the photogenerated carriers, but also can induce delayed decay of the photocurrent. The improved charge separation efficiency enhances the photoelectric properties significantly, while the delayed decay of the photocurrent led to the realization of photoelectric synaptic behaviors. This simple and efficient method of fabricating light-stimulated phototransistors may inspire new research progress into the development of artificial intelligence systems.
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Affiliation(s)
- En-bo Fu
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055 China
- Nano Science and Technology Institute, University of Science and Technology of China, Suzhou, 215123 China
| | - Yu Liu
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055 China
- Nano Science and Technology Institute, University of Science and Technology of China, Suzhou, 215123 China
| | - Xiang-Rui Hou
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055 China
- Nano Science and Technology Institute, University of Science and Technology of China, Suzhou, 215123 China
| | - Ye Feng
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055 China
| | - Chun-lei Yang
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055 China
| | - Yan Shao
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055 China
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29
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Qin L, Yuan S, Chen Z, Bai X, Xu J, Zhao L, Zhou W, Wang Q, Chang J, Sun J. Solution-processed transparent p-type orthorhombic K doped SnO films and their application in a phototransistor. NANOSCALE 2022; 14:13763-13770. [PMID: 36102639 DOI: 10.1039/d2nr03785h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The exploitation of p-type oxide semiconductors with excellent optoelectrical properties as well as a simple preparation process is still challenging owing to the difficulty in producing hole carriers which results from strong hole localization in p-type oxide semiconductors. In this work, we succeeded in using ethylene glycol as a reductant to prepare orthorhombic structure SnO films using a sol-gel method and through K doping the optical and electrical properties of the films were improved. When the orthorhombic K doped SnO (K-SnO) films were applied in a phototransistor, it presented ultra-broadband photosensing from the ultraviolet to infrared region (300-1000 nm), demonstrating a photoresponsivity of 349 A W-1 and a detectivity of 5.45 × 1012 Jones at 900 nm under a light intensity of 0.00471 mW cm-2. In particular, infrared photosensing was for the first time reported in the SnO based phototransistors. This work not only provides a simple method to fabricate high-performance and low-cost p-type K-SnO films and phototransistors, but may also suggest a new way to improve the p-type characteristics of other oxide semiconductors and devices.
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Affiliation(s)
- Li Qin
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan, 430074, China.
| | - Shuoguo Yuan
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan, 430074, China.
| | - Zequn Chen
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan, 430074, China.
| | - Xue Bai
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan, 430074, China.
| | - Jianmei Xu
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan, 430074, China.
| | - Ling Zhao
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan, 430074, China.
| | - Wei Zhou
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan, 430074, China.
| | - Qing Wang
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan, 430074, China.
| | - Jingjing Chang
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, China.
| | - Jian Sun
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan, 430074, China.
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30
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Yu L, Wang L, Dou Y, Zhang Y, Li P, Li J, Wei W. Recent Advances in Ferroelectric Materials-Based Photoelectrochemical Reaction. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3026. [PMID: 36080063 PMCID: PMC9457969 DOI: 10.3390/nano12173026] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/31/2022] [Revised: 08/28/2022] [Accepted: 08/29/2022] [Indexed: 06/15/2023]
Abstract
Inorganic perovskite ferroelectric-based nanomaterials as sustainable new energy materials, due to their intrinsic ferroelectricity and environmental compatibility, are intended to play a crucial role in photoelectrochemical field as major functional materials. Because of versatile physical properties and excellent optoelectronic properties, ferroelectric-based nanomaterials attract much attention in the field of photocatalysis, photoelectrochemical water splitting and photovoltaic. The aim of this review is to cover the recent advances by stating the different kinds of ferroelectrics separately in the photoelectrochemical field as well as discussing how ferroelectric polarization will impact functioning of photo-induced carrier separation and transportation in the interface of the compounded semiconductors. In addition, the future prospects of ferroelectric-based nanomaterials are also discussed.
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Affiliation(s)
- Limin Yu
- Henan Engineering Center of New Energy Battery Materials, Henan D&A Engineering Center of Advanced Battery Materials, Shangqiu Normal University, Shangqiu 476000, China
| | - Lijing Wang
- Henan Engineering Center of New Energy Battery Materials, Henan D&A Engineering Center of Advanced Battery Materials, Shangqiu Normal University, Shangqiu 476000, China
| | - Yanmeng Dou
- Shandong Yuhuang New Energy Technology Co., Ltd., Heze 274000, China
| | - Yongya Zhang
- Henan Engineering Center of New Energy Battery Materials, Henan D&A Engineering Center of Advanced Battery Materials, Shangqiu Normal University, Shangqiu 476000, China
| | - Pan Li
- Henan Engineering Center of New Energy Battery Materials, Henan D&A Engineering Center of Advanced Battery Materials, Shangqiu Normal University, Shangqiu 476000, China
| | - Jieqiong Li
- Henan Engineering Center of New Energy Battery Materials, Henan D&A Engineering Center of Advanced Battery Materials, Shangqiu Normal University, Shangqiu 476000, China
| | - Wei Wei
- Henan Engineering Center of New Energy Battery Materials, Henan D&A Engineering Center of Advanced Battery Materials, Shangqiu Normal University, Shangqiu 476000, China
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Li X, Wu F, Yao Y, Wu W, Ji C, Li L, Sun Z, Luo J, Liu X. Robust Spin-Dependent Anisotropy of Circularly Polarized Light Detection from Achiral Layered Hybrid Perovskite Ferroelectric Crystals. J Am Chem Soc 2022; 144:14031-14036. [PMID: 35913264 DOI: 10.1021/jacs.2c06048] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
Circularly polarized light (CPL) detection has sparked overwhelming research interest for its widespread chiroptoelectronic and spintronic applications. Ferroelectric materials, especially emerging layered hybrid perovskite ferroelectrics, exhibiting striking bulk photovoltaic effect (BPVE) present significant possibilities for CPL detection by a distinctive working concept. Herein, for the first time, we demonstrate the realization of robust angular anisotropy of CPL detection in a new layered hybrid perovskite ferroelectric crystal (CPA)2FAPb2Br7 (1, CPA is chloropropylammonium, FA is formamidinium), which crystallized in an optically active achiral polar point group. Benefiting from the notable spontaneous polarization (5.1 μC/cm2) and excellent semiconducting characteristics, single crystals of 1 exhibit remarkable BPVE under light illumination, with a high current on/off switching ratio (ca. 103). More intriguingly, driven by the angular carrier drift originating from spin-dependent BPVE in optically active ferroelectrics, 1 displays highly sensitive self-powered CPL detection performance, showing a robust angular anisotropy factor up to 0.98, which is far more than those achieved by material intrinsic chirality. This work provides an unprecedented approach for realizing highly sensitive CPL detection, which sheds light on the further design of optically active ferroelectrics for chiral photonic applications.
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Affiliation(s)
- Xiaoqi Li
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fujian 350002, China
| | - Fafa Wu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fujian 350002, China
| | - Yunpeng Yao
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fujian 350002, China
| | - Wentao Wu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fujian 350002, China
| | - Chengmin Ji
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fujian 350002, China.,University of the Chinese Academy of Sciences, Beijing 100039, China
| | - Lina Li
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fujian 350002, China.,University of the Chinese Academy of Sciences, Beijing 100039, China
| | - Zhihua Sun
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fujian 350002, China.,University of the Chinese Academy of Sciences, Beijing 100039, China
| | - Junhua Luo
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fujian 350002, China.,School of Chemistry and Chemical Engineering, Jiangxi Normal University, Nanchang 330022, China.,Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fujian 350108, China.,University of the Chinese Academy of Sciences, Beijing 100039, China
| | - Xitao Liu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fujian 350002, China.,University of the Chinese Academy of Sciences, Beijing 100039, China
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32
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Yan T, Li Z, Cao F, Chen J, Wu L, Fang X. An All-Organic Self-Powered Photodetector with Ultraflexible Dual-Polarity Output for Biosignal Detection. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2201303. [PMID: 35653221 DOI: 10.1002/adma.202201303] [Citation(s) in RCA: 20] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/09/2022] [Revised: 04/17/2022] [Indexed: 06/15/2023]
Abstract
Endowing photodetectors with mechanically flexibility and actual functionality are current research issues in developing optoelectronic devices. However, rigid metal-based or metal-oxide-based electrodes remain a block to the realization of ultraflexible electronics. Thus, an ultraflexible all-organic photodetector (all-OPD) is designed by innovatively introducing symmetrical organic electrodes PH1000/PH1000 to substitute the widely applied indium-doped tin oxide (ITO)/Ag electrodes. Specifically, this all-OPD exhibits a high self-powered responsivity (R) of over 100 mA W-1 among 500-600 nm and the photocurrent remains about 80% of the original performance after being bent 20 000 circles, and can output steady biosignals for photo-plethysmography (PPG) application. More importantly, this all-OPD outputs dual-polarity photocurrent as it is flipped or folded. Benefitting from the ordered phase distribution and designed Schottky barrier heights, the photogenerated holes will be transferred and collected by nearer electrode, while electrons will be trapped in the thick bulk heterojunction (BHJ) as a result of the long channel. This work offers a new avenue toward developing a multifunctional and ultraflexible all-OPD with a straightforward all-solution method, and it is expected to be more compatible in complex application scenarios.
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Affiliation(s)
- Tingting Yan
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Ziqing Li
- Institute of Optoelectronics, Fudan University, Shanghai, 200433, P. R. China
| | - Fa Cao
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Jiaxin Chen
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Limin Wu
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
- College of Chemistry and Chemical Engineering, Inner Mongolia University, Hohhot, 010021, P. R. China
| | - Xiaosheng Fang
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
- Institute of Optoelectronics, Fudan University, Shanghai, 200433, P. R. China
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33
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Li Z, Li Z, Zuo C, Fang X. Application of Nanostructured TiO 2 in UV Photodetectors: A Review. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2109083. [PMID: 35061927 DOI: 10.1002/adma.202109083] [Citation(s) in RCA: 43] [Impact Index Per Article: 21.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/10/2021] [Revised: 01/16/2022] [Indexed: 06/14/2023]
Abstract
As a wide-bandgap semiconductor material, titanium dioxide (TiO2 ), which possesses three crystal polymorphs (i.e., rutile, anatase, and brookite), has gained tremendous attention as a cutting-edge material for application in the environment and energy fields. Based on the strong attractiveness from its advantages such as high stability, excellent photoelectric properties, and low-cost fabrication, the construction of high-performance photodetectors (PDs) based on TiO2 nanostructures is being extensively developed. An elaborate microtopography and device configuration is the most widely used strategy to achieve efficient TiO2 -based PDs with high photoelectric performances; however, a deep understanding of all the key parameters that influence the behavior of photon-generated carriers, is also highly required to achieve improved photoelectric performances, as well as their ultimate functional applications. Herein, an in-depth illustration of the electrical and optical properties of TiO2 nanostructures in addition to the advances in the technological issues such as preparation, microdefects, p-type doping, bandgap engineering, heterojunctions, and functional applications are presented. Finally, a future outlook for TiO2 -based PDs, particularly that of further functional applications is provided. This work will systematically illustrate the fundamentals of TiO2 and shed light on the preparation of more efficient TiO2 nanostructures and heterojunctions for future photoelectric applications.
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Affiliation(s)
- Ziliang Li
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Ziqing Li
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Chaolei Zuo
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Xiaosheng Fang
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
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Kumari P, Bahadur N, Conlan XA, Laleh M, Kong L, O'Dell LA, Dumée LF, Merenda A. Atomically-thin Schottky-like photo-electrocatalytic cross-flow membrane reactors for ultrafast remediation of persistent organic pollutants. WATER RESEARCH 2022; 218:118519. [PMID: 35512533 DOI: 10.1016/j.watres.2022.118519] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/05/2022] [Revised: 04/18/2022] [Accepted: 04/26/2022] [Indexed: 06/14/2023]
Abstract
The remediation of persistent organic pollutants in surface and ground water represents a major environmental challenge worldwide. Conventional physico-chemical techniques do not efficiently remove such persistent organic pollutants and new remediation techniques are therefore required. Photo-electro catalytic membranes represent an emerging solution that can combine photocatalytic and electrocatalytic degradation of contaminants along with molecular sieving. Herein, macro-porous photo-electro catalytic membranes were prepared using conductive and porous stainless steel metal membranes decorated with nano coatings of semiconductor photocatalytic metal oxides (TiO2 and ZnO) via atomic layer deposition, producing highly conformal and stable coatings. The metal - semiconductor junction between the stainless steel membranes and photocatalysts provides Schottky - like characteristics to the coated membranes. The PEC membranes showed induced hydrophilicity from the nano-coatings and enhanced electro-chemical properties due to the Schottky junction. A high electron transfer rate was also induced in the coated membranes as the photocurrent efficiency increased by 4 times. The photo-electrocatalytic efficiency of the TiO2 and ZnO coated membranes were demonstrated in batch and cross flow filtration reactors for the degradation of persistent organic pollutant solution, offering increased degradation kinetic factors by 2.9 and 2.3 compared to photocatalysis and electrocatalysis, respectively. The recombination of photo-induced electron and hole pairs is mitigated during the photo-electrocatalytic process, resulting in an enhanced catalytic performance. The strategy offers outstanding perspectives to design stimuli-responsive membrane materials able to sieve and degrade simultaneously toxic contaminants towards greater process integration and self-cleaning operations.
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Affiliation(s)
- Priyanka Kumari
- Institute for Frontier Materials, Deakin University, Waurn Ponds, Geelong, VIC 3216, Australia; TERI-Deakin Nano-Biotechnology Center (TDNBC), TERI Gram, Gwalpahari, Gurugram, Haryana 122003, India.
| | - Nupur Bahadur
- TADOX® Technology Centre for Water Reuse, Water Resources Division, The Energy and Resources Institute (TERI), India Habitat Centre, Lodhi Road, New Delhi 110003, India.
| | - Xavier A Conlan
- School of Life and Environmental Sciences, Deakin University, Waurn Ponds, VIC 3216, Australia
| | - Majid Laleh
- Institute for Frontier Materials, Deakin University, Waurn Ponds, Geelong, VIC 3216, Australia
| | - Lingxue Kong
- Institute for Frontier Materials, Deakin University, Waurn Ponds, Geelong, VIC 3216, Australia
| | - Luke A O'Dell
- Institute for Frontier Materials, Deakin University, Waurn Ponds, Geelong, VIC 3216, Australia
| | - Ludovic F Dumée
- Department of Chemical Engineering, Khalifa University, Abu Dhabi, United Arab Emirates; Research and Innovation Center on CO2 and Hydrogen, Khalifa University, Abu Dhabi, United Arab Emirates; Center for Membrane and Advanced Water Technology, Khalifa University, Abu Dhabi, United Arab Emirates.
| | - Andrea Merenda
- School of Science, RMIT University, 124 La Trobe Street, Melbourne, VIC, Australia
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35
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Singh A, Verma A, Yadav BC, Chauhan P. Earth-abundant and environmentally benign Ni-Zn iron oxide intercalated in a polyaniline based nanohybrid as an ultrafast photodetector. Dalton Trans 2022; 51:7864-7877. [PMID: 35527707 DOI: 10.1039/d2dt00534d] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Abstract
Nickel-zinc iron oxide (NZF) was introduced into a polyaniline (PANI) matrix by an in situ chemical oxidation polymerization approach. The surface composition and chemical states were investigated by X-ray photoelectron spectroscopy (XPS), which revealed an Fe 2p spectrum with the two peak positions of Fe 2p3/2 and Fe 2p1/2 at 711.00 and 724.48 eV, respectively. Deconvolution of the Fe 2p3/2 peak revealed two components with binding energies of 713.98 and 718.16 eV, corresponding to the presence of Fe cations in the octahedral and tetrahedral sites. Additionally, the Rietveld refinement of NZF showed a cubic system with the Fd3m space group. High-resolution transmission electron microscopy (HRTEM) analysis showed that the NZF material strongly interacts with polyaniline, while the selected area electron diffraction (SAED) pattern perfectly matched with the XRD data. Lognormal distribution was used to determine the particle size, which was found to be in the range of 1-100 nm. A flexible photodetector device utilizing the NZF-PANI nanohybrid was fabricated on an environmentally friendly, biodegradable cellulose paper substrate and the device exhibited excellent performance, i.e., a responsivity of 0.069 A W-1 and detectivity of 7.258 × 1010 Jones at a very low voltage of 0.1 V. The non-stretched device showed a responsivity of 24.980 A W-1 at 5 V, whereas at 2 cm-1 bending curvature, the device showed a responsivity of 20.175 A W-1, which was much higher than the responsivity of a commercial photodetector (<0.5 A W-1).
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Affiliation(s)
- Anshika Singh
- Advanced Nanomaterials Research Laboratory, U.G.C. Centre of Advanced Studies, Department of Physics, University of Allahabad, Prayagraj-211002, U.P., India.
| | - Arpit Verma
- Nanomaterials and Sensors Research Laboratory, Department of Physics, Babasaheb Bhimrao Ambedkar University, Lucknow-226025, U.P., India
| | - B C Yadav
- Nanomaterials and Sensors Research Laboratory, Department of Physics, Babasaheb Bhimrao Ambedkar University, Lucknow-226025, U.P., India
| | - Pratima Chauhan
- Advanced Nanomaterials Research Laboratory, U.G.C. Centre of Advanced Studies, Department of Physics, University of Allahabad, Prayagraj-211002, U.P., India.
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Liu B, Yu Y, Hu Z, Li M, Ma L, Sun H, Jia J, Jiang C, Zhong Y, Chen Y, Duan Z. Ag metal interconnect wires formed by pseudoplastic nanoparticles fluid imprinting lithography with microwave assistant sintering. NANOTECHNOLOGY 2022; 33:275301. [PMID: 35299165 DOI: 10.1088/1361-6528/ac5eeb] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/07/2021] [Accepted: 03/17/2022] [Indexed: 06/14/2023]
Abstract
Nanoimprint technology has the advantages of low cost, high precision, high fidelity and high yield. The metal nanoparticle fluid is non-Newtonian fluid, which is used as the imprint transfer medium to realize high fidelity of pattern because of its shear thinning effect. In order to functionalize the metal nanoparticles microstructure, the subsequent sintering step is required to form a metal interconnect wire. Metal interconnect wire with fewer grain boundaries and fewer holes have excellent mechanical and electronic properties. In this paper, the pseudoplastic metal nanoparticle fluid was formed by Ag nanoparticle and precursor solution, and then the thermal diffusion process was completed by microwave sintering after interconnects were embossed. The influence of microwave and thermal atmosphere on the microstructure and performance of Ag Interconnect wires was analyzed and discussed, and the Ag Interconnect wires performance was determined under the influence of time and temperature parameters. In our experiments, the interconnects after microwave sintering can achieve 39% of the conductivity of bulk silver. The microwave sintering module might be integrated as the heat treatment module of the metal micro/nano pattern directly imprint lithography.
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Affiliation(s)
- Boyu Liu
- School of Physical and Microelectronics, Zhengzhou 450001, People's Republic of China
- Institute of Intelligent Sensing, Zhengzhou 450001, People's Republic of China
| | - Yongli Yu
- School of Physical and Microelectronics, Zhengzhou 450001, People's Republic of China
- Institute of Intelligent Sensing, Zhengzhou 450001, People's Republic of China
| | - Zhennan Hu
- School of Physical and Microelectronics, Zhengzhou 450001, People's Republic of China
- Institute of Intelligent Sensing, Zhengzhou 450001, People's Republic of China
| | - Mengke Li
- School of Physical and Microelectronics, Zhengzhou 450001, People's Republic of China
- Institute of Intelligent Sensing, Zhengzhou 450001, People's Republic of China
| | - Liuhong Ma
- School of Physical and Microelectronics, Zhengzhou 450001, People's Republic of China
- Institute of Intelligent Sensing, Zhengzhou 450001, People's Republic of China
| | - Haibin Sun
- Remote Sensing and Photogrammetry, Finnish Geospatial Research Institute, Helsinki FL-02430, Finland
| | - Jianxin Jia
- Remote Sensing and Photogrammetry, Finnish Geospatial Research Institute, Helsinki FL-02430, Finland
| | - Changhui Jiang
- Remote Sensing and Photogrammetry, Finnish Geospatial Research Institute, Helsinki FL-02430, Finland
| | - Yinghui Zhong
- School of Physical and Microelectronics, Zhengzhou 450001, People's Republic of China
- Institute of Intelligent Sensing, Zhengzhou 450001, People's Republic of China
| | - Yuwei Chen
- Remote Sensing and Photogrammetry, Finnish Geospatial Research Institute, Helsinki FL-02430, Finland
| | - Zhiyong Duan
- School of Physical and Microelectronics, Zhengzhou 450001, People's Republic of China
- Institute of Intelligent Sensing, Zhengzhou 450001, People's Republic of China
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37
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Pan C, Mao Z, Yuan X, Zhang H, Mei L, Ji X. Heterojunction Nanomedicine. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2105747. [PMID: 35174980 PMCID: PMC9008793 DOI: 10.1002/advs.202105747] [Citation(s) in RCA: 30] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/11/2021] [Revised: 01/29/2022] [Indexed: 05/07/2023]
Abstract
Exogenous stimulation catalytic therapy has received enormous attention as it holds great promise to address global medical issues. However, the therapeutic effect of catalytic therapy is seriously restricted by the fast charge recombination and the limited utilization of exogenous stimulation by catalysts. In the past few decades, many strategies have been developed to overcome the above serious drawbacks, among which heterojunctions are the most widely used and promising strategy. This review attempts to summarize the recent progress in the rational design and fabrication of heterojunction nanomedicine, such as semiconductor-semiconductor heterojunctions (including type I, type II, type III, PN, and Z-scheme junctions) and semiconductor-metal heterojunctions (including Schottky, Ohmic, and localized surface plasmon resonance-mediated junctions). The catalytic mechanisms and properties of the above junction systems are also discussed in relation to biomedical applications, especially cancer treatment and sterilization. This review concludes with a summary of the challenges and some perspectives on future directions in this exciting and still evolving field of research.
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Affiliation(s)
- Chao Pan
- Academy of Medical Engineering and Translational MedicineMedical CollegeTianjin UniversityTianjin300072China
| | - Zhuo Mao
- Tianjin Key Laboratory of Biomedical MaterialsKey Laboratory of Biomaterials and Nanotechnology for Cancer ImmunotherapyInstitute of Biomedical EngineeringChinese Academy of Medical Sciences and Peking Union Medical CollegeTianjin300192China
| | - Xue Yuan
- Academy of Medical Engineering and Translational MedicineMedical CollegeTianjin UniversityTianjin300072China
| | - Hanjie Zhang
- Tianjin Key Laboratory of Biomedical MaterialsKey Laboratory of Biomaterials and Nanotechnology for Cancer ImmunotherapyInstitute of Biomedical EngineeringChinese Academy of Medical Sciences and Peking Union Medical CollegeTianjin300192China
| | - Lin Mei
- Tianjin Key Laboratory of Biomedical MaterialsKey Laboratory of Biomaterials and Nanotechnology for Cancer ImmunotherapyInstitute of Biomedical EngineeringChinese Academy of Medical Sciences and Peking Union Medical CollegeTianjin300192China
| | - Xiaoyuan Ji
- Academy of Medical Engineering and Translational MedicineMedical CollegeTianjin UniversityTianjin300072China
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38
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Gak VY, Gadomska AV, Spirin MG, Pevtsov DN, Katsaba AV, Brichkin SB, Razumov VF. Study of Photoelectrophysical Characteristics of IR Photodetector Based on HgTe Colloidal Quantum Dots. HIGH ENERGY CHEMISTRY 2022. [DOI: 10.1134/s0018143922020035] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/23/2022]
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39
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Beisenbayev AR, Sadirkhanov ZT, Yerlanuly Y, Kaikanov MI, Jumabekov AN. Self-Powered Organometal Halide Perovskite Photodetector with Embedded Silver Nanowires. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:1034. [PMID: 35407152 PMCID: PMC9000456 DOI: 10.3390/nano12071034] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/07/2022] [Revised: 02/28/2022] [Accepted: 03/05/2022] [Indexed: 12/15/2022]
Abstract
Metal-semiconductor-metal (MSM) configuration of perovskite photodetectors (PPDs) suggests easy and low-cost manufacturing. However, the basic structures of MSM PPDs include vertical and lateral configurations, which require the use of expensive materials such as transparent conductive oxides or/and sophisticated fabrication techniques such as lithography. Integrating metallic nanowire-based electrodes into the perovskite photo-absorber layer to form one-half of the MSM PPD structure could potentially resolve the key issues of both configurations. Here, a manufacturing of solution-processed and self-powered MSM PPDs with embedded silver nanowire electrodes is demonstrated. The embedding of silver nanowire electrode into the perovskite layer is achieved by treating the silver nanowire/perovskite double layer with a methylamine gas vapor. The evaporated gold layer is used as the second electrode to form MSM PPDs. The prepared MSM PPDs show a photoresponsivity of 4 × 10-5 AW-1 in the UV region and 2 × 10-5 AW-1 in the visible region. On average, the devices exhibit a photocurrent of 1.1 × 10-6 A under white light (75 mW cm-2) illumination with an ON/OFF ratio of 83.4. The results presented in this work open up a new method for development and fabrication of simple, solution-processable MSM self-powered PPDs.
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Affiliation(s)
- Almaz R. Beisenbayev
- Department of Chemical Engineering, Nazarbayev University, Nur-Sultan 010000, Kazakhstan;
| | - Zhandos T. Sadirkhanov
- Department of Physics, Nazarbayev University, Nur-Sultan 010000, Kazakhstan; (Z.T.S.); (Y.Y.); (M.I.K.)
| | - Yerassyl Yerlanuly
- Department of Physics, Nazarbayev University, Nur-Sultan 010000, Kazakhstan; (Z.T.S.); (Y.Y.); (M.I.K.)
| | - Marat I. Kaikanov
- Department of Physics, Nazarbayev University, Nur-Sultan 010000, Kazakhstan; (Z.T.S.); (Y.Y.); (M.I.K.)
| | - Askhat N. Jumabekov
- Department of Physics, Nazarbayev University, Nur-Sultan 010000, Kazakhstan; (Z.T.S.); (Y.Y.); (M.I.K.)
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40
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Fahmy HM, Abu Serea ES, Salah-Eldin RE, Al-Hafiry SA, Ali MK, Shalan AE, Lanceros-Méndez S. Recent Progress in Graphene- and Related Carbon-Nanomaterial-based Electrochemical Biosensors for Early Disease Detection. ACS Biomater Sci Eng 2022; 8:964-1000. [PMID: 35229605 DOI: 10.1021/acsbiomaterials.1c00710] [Citation(s) in RCA: 19] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/29/2022]
Abstract
Graphene- and carbon-based nanomaterials are key materials to develop advanced biosensors for the sensitive detection of many biomarkers owing to their unique properties. Biosensors have attracted increasing interest because they allow efficacious, sensitive, selective, rapid, and low-cost diagnosis. Biosensors are analytical devices based on receptors for the process of detection and transducers for response measuring. Biosensors can be based on electrochemical, piezoelectric, thermal, and optical transduction mechanisms. Early virus identification provides critical information about potentially effective and selective therapies, extends the therapeutic window, and thereby reduces morbidity. The sensitivity and selectivity of graphene can be amended via functionalizing it or conjoining it with further materials. Amendment of the optical and electrical features of the hybrid structure by introducing appropriate functional groups or counterparts is especially appealing for quick and easy-to-use virus detection. Various techniques for the electrochemical detection of viruses depending on antigen-antibody interactions or DNA hybridization are discussed in this work, and the reasons behind using graphene and related carbon nanomaterials for the fabrication are presented and discussed. We review the existing state-of-the-art directions of graphene-based classifications for detecting DNA, protein, and hormone biomarkers and summarize the use of the different biosensors to detect several diseases, like cancer, Alzheimer's disease, and diabetes, to sense numerous viruses, including SARS-CoV-2, human immunodeficiency virus, rotavirus, Zika virus, and hepatitis B virus, and to detect the recent pandemic virus COVID-19. The general concepts, mechanisms of action, benefits, and disadvantages of advanced virus biosensors are discussed to afford beneficial evidence of the creation and manufacture of innovative virus biosensors. We emphasize that graphene-based nanomaterials are ideal candidates for electrochemical biosensor engineering due to their special and tunable physicochemical properties.
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Affiliation(s)
- Heba Mohamed Fahmy
- Biophysics Department, Faculty of Science, Cairo University, 12613 Giza, Egypt
| | - Esraa Samy Abu Serea
- Chemistry and Biochemistry Department, Faculty of Science, Cairo University, 12613 Giza, Egypt.,BCMaterials-Basque Center for Materials, Applications and Nanostructures, Martina Casiano, UPV/EHU Science Park, Barrio Sarriena s/n, Leioa 48940, Spain
| | - Reem Essam Salah-Eldin
- Chemistry and Zoology Department, Faculty of Science, Cairo University, 12613 Giza, Egypt
| | | | - Miar Khaled Ali
- Biotechnology/Biomolecular Chemistry Program, Faculty of Science, Cairo University, 12613 Giza, Egypt
| | - Ahmed Esmail Shalan
- BCMaterials-Basque Center for Materials, Applications and Nanostructures, Martina Casiano, UPV/EHU Science Park, Barrio Sarriena s/n, Leioa 48940, Spain.,Central Metallurgical Research and Development Institute, P.O. Box 87, Helwan, 11422 Cairo, Egypt
| | - Senentxu Lanceros-Méndez
- BCMaterials-Basque Center for Materials, Applications and Nanostructures, Martina Casiano, UPV/EHU Science Park, Barrio Sarriena s/n, Leioa 48940, Spain.,IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Spain
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41
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Lin H, Jiang A, Xing S, Li L, Cheng W, Li J, Miao W, Zhou X, Tian L. Advances in Self-Powered Ultraviolet Photodetectors Based on P-N Heterojunction Low-Dimensional Nanostructures. NANOMATERIALS 2022; 12:nano12060910. [PMID: 35335723 PMCID: PMC8953703 DOI: 10.3390/nano12060910] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/11/2022] [Revised: 03/02/2022] [Accepted: 03/03/2022] [Indexed: 02/04/2023]
Abstract
Self-powered ultraviolet (UV) photodetectors have attracted considerable attention in recent years because of their vast applications in the military and civil fields. Among them, self-powered UV photodetectors based on p-n heterojunction low-dimensional nanostructures are a very attractive research field due to combining the advantages of low-dimensional semiconductor nanostructures (such as large specific surface area, excellent carrier transmission channel, and larger photoconductive gain) with the feature of working independently without an external power source. In this review, a selection of recent developments focused on improving the performance of self-powered UV photodetectors based on p-n heterojunction low-dimensional nanostructures from different aspects are summarized. It is expected that more novel, dexterous, and intelligent photodetectors will be developed as soon as possible on the basis of these works.
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Affiliation(s)
- Haowei Lin
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (A.J.); (S.X.); (L.L.); (W.C.); (J.L.); (W.M.); (X.Z.); (L.T.)
- Henan International Joint Laboratory of Nano-Photoelectric Magnetic Materials, Henan University of Technology, Zhengzhou 450001, China
- Correspondence:
| | - Ao Jiang
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (A.J.); (S.X.); (L.L.); (W.C.); (J.L.); (W.M.); (X.Z.); (L.T.)
| | - Shibo Xing
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (A.J.); (S.X.); (L.L.); (W.C.); (J.L.); (W.M.); (X.Z.); (L.T.)
| | - Lun Li
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (A.J.); (S.X.); (L.L.); (W.C.); (J.L.); (W.M.); (X.Z.); (L.T.)
| | - Wenxi Cheng
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (A.J.); (S.X.); (L.L.); (W.C.); (J.L.); (W.M.); (X.Z.); (L.T.)
| | - Jinling Li
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (A.J.); (S.X.); (L.L.); (W.C.); (J.L.); (W.M.); (X.Z.); (L.T.)
| | - Wei Miao
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (A.J.); (S.X.); (L.L.); (W.C.); (J.L.); (W.M.); (X.Z.); (L.T.)
| | - Xuefei Zhou
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (A.J.); (S.X.); (L.L.); (W.C.); (J.L.); (W.M.); (X.Z.); (L.T.)
| | - Li Tian
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (A.J.); (S.X.); (L.L.); (W.C.); (J.L.); (W.M.); (X.Z.); (L.T.)
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Dosimetric analysis of graphitic carbon nitride quantum dots exposed to a gamma radiation for a low-dose applications. Appl Radiat Isot 2022; 184:110200. [DOI: 10.1016/j.apradiso.2022.110200] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/22/2021] [Revised: 02/19/2022] [Accepted: 03/12/2022] [Indexed: 11/16/2022]
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Zheng D, Dong X, Lu J, Niu Y, Wang H. High-Sensitivity Infrared Photoelectric Detection Based on WS 2 /Si Structure Tuned by Ferroelectrics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2105188. [PMID: 34862713 DOI: 10.1002/smll.202105188] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/27/2021] [Revised: 10/31/2021] [Indexed: 06/13/2023]
Abstract
As one of the typical transition-metal dichalcogenides with distinct optical and electrical properties, WS2 exhibits tremendous potential for optoelectronic devices. However, its inherent band gap range limits the application in the infrared region. To overcome this draw-back and improve the sensitivity, P(VDF-CTFE) is used as a ferroelectric gate to control the states of WS2 /Si junctions and achieve an enhanced infrared photodetection. The polarization electric field not only broadens the range of absorption wavelength (405-1550 nm) but also greatly promotes the sensitivity of lateral photovoltaic effect (LPE) (from 198.6 to 503.2 mV mm-1 ). This phenomenon is attributed to the reduction of WS2 band gap and the change of potential barrier at the interface of the junction. Meanwhile, the response speed is improved significantly due to the increase of carrier initial kinetic energy. This new scheme for ferroelectric tuned LPE opens up a way to realize high-sensitivity, ultrafast, and stable infrared photodetection.
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Affiliation(s)
- Diyuan Zheng
- State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Physics and Astronomy, Key Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai, 200240, P. R. China
| | - Xinyuan Dong
- State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Physics and Astronomy, Key Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai, 200240, P. R. China
| | - Jing Lu
- National Engineering Research Centre for Nanotechnology, No. 28 East Jiangchuan Road, Shanghai, 200241, P. R. China
| | - Yiru Niu
- State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Physics and Astronomy, Key Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai, 200240, P. R. China
| | - Hui Wang
- State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Physics and Astronomy, Key Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai, 200240, P. R. China
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44
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Li L, Zhang Q, He B, Pan R, Wang Z, Chen M, Wang Z, Yin K, Yao Y, Wei L, Sun L. Advanced Multifunctional Aqueous Rechargeable Batteries Design: From Materials and Devices to Systems. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2104327. [PMID: 34693565 DOI: 10.1002/adma.202104327] [Citation(s) in RCA: 25] [Impact Index Per Article: 12.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/06/2021] [Revised: 07/28/2021] [Indexed: 06/13/2023]
Abstract
Multifunctional aqueous rechargeable batteries (MARBs) are regarded as safe, cost-effective, and scalable electrochemical energy storage devices, which offer additional functionalities that conventional batteries cannot achieve, which ideally leads to unprecedented applications. Although MARBs are among the most exciting and rapidly growing topics in scientific research and industrial development nowadays, a systematic summary of the evolution and advances in the field of MARBs is still not available. Therefore, the review presented comprehensively and systematically summarizes the design principles and the recent advances of MARBs by categories of smart ARBs and integrated systems, together with an analysis of their device design and configuration, electrochemical performance, and diverse smart functions. The two most promising strategies to construct novel MARBs may be A) the introduction of functional materials into ARB components, and B) integration of ARBs with other functional devices. The ongoing challenges and future perspectives in this research and development field are outlined to foster the future development of MARBs. Finally, the most important upcoming research directions in this rapidly developing field are highlighted that may be most promising to lead to the commercialization of MARBs and to a further broadening of their range of applications.
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Affiliation(s)
- Lei Li
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, 210096, China
| | - Qichong Zhang
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, 210096, China
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
- Division of Nanomaterials and Jiangxi Key Lab of Carbonene Materials, Suzhou Institute of Nano-Tech and Nano-Bionics, Nanchang, Chinese Academy of Sciences, Nanchang, 330200, China
| | - Bing He
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Rui Pan
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, 210096, China
| | - Zhixun Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Mengxiao Chen
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Zhe Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Kuibo Yin
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, 210096, China
| | - Yagang Yao
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Lei Wei
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Litao Sun
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, 210096, China
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45
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Zhang J, Liu J. In situ construction of a Te/CsPbBr 3 heterojunction for self-powered photodetector. RSC Adv 2022; 12:2729-2735. [PMID: 35425291 PMCID: PMC8979205 DOI: 10.1039/d1ra08236a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/10/2021] [Accepted: 01/03/2022] [Indexed: 12/16/2022] Open
Abstract
In this study, CsPbBr3 particles were prepared by a simple solvent evaporation method in ambient environment; the p–n heterojunction formed by CsPbBr3 particles on the surface of a single long Te wire was used to construct a high-performance Te/CsPbBr3 photodetector. Compared with CsPbBr3 PDs, the Te/CsPbBr3 photodetector showed improved photocurrent, and exhibited characteristics of excellent self-powered performance, broad-spectrum response (UV-visible), and ultra-fast response speed (trise = 0.09 ms). In addition, under zero bias and upon 540 nm light irradiation, the device had good responsivity (0.35 mA W−1), high photosensitivity (up to 100 on/off ratio), and a detectivity of 1.42 × 1010 Jones. This study provides insight into the possibility of manufacturing high-performance self-powered photodetectors through a simple in situ construction of heterojunctions. In this study, CsPbBr3 particles were prepared by a simple solvent evaporation method in ambient environment; the p–n heterojunction formed by CsPbBr3 particles on the surface of a single long Te wire was used to construct a high-performance Te/CsPbBr3 photodetector.![]()
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Affiliation(s)
- Jie Zhang
- College of Electronic and Information Engineering, Changshu Institute of Technology Changshu 215500 China .,Suzhou Key Laboratory of Advanced Lighting and Display Technologies China
| | - Jiaojiao Liu
- College of Electronic and Information Engineering, Changshu Institute of Technology Changshu 215500 China .,Suzhou Key Laboratory of Advanced Lighting and Display Technologies China
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46
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Yu Y, Wang W, Li W, Wang G, Wang Y, Lu Z, Li S, Zhao W, Li Y, Liu T, Yan X. Photodetectors Based on Micro-nano Structure Material. Front Chem 2022; 9:832028. [PMID: 35096783 PMCID: PMC8790564 DOI: 10.3389/fchem.2021.832028] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/09/2021] [Accepted: 12/24/2021] [Indexed: 01/18/2023] Open
Abstract
Photodetectors converting optical signals into electrical signals have been widely utilized and have received more and more attention in scientific research and industrial fields including optical interconnection, optical communication, and environmental monitoring. Herein, we summarize the latest development of photodetectors with different micro-nano structures and different materials and the performance indicators of photodetectors. Several photodetectors, such as flexible, ultraviolet two-dimensional (2D) microscale, and dual-band photodetectors, are listed in this minireview. Meanwhile, the current bottleneck and future development prospects of the photodetector are discussed.
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Affiliation(s)
- Yu Yu
- Center for Advanced Laser Technology, Hebei University of Technology, Tianjin, China
- Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin, China
- *Correspondence: Yu Yu,
| | - Wuyue Wang
- Center for Advanced Laser Technology, Hebei University of Technology, Tianjin, China
- Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin, China
| | - Weihua Li
- Weihai Photonics Information Technology Lab Co., Ltd., Shandong, China
| | - Gong Wang
- Center for Advanced Laser Technology, Hebei University of Technology, Tianjin, China
- Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin, China
| | - Yulei Wang
- Center for Advanced Laser Technology, Hebei University of Technology, Tianjin, China
- Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin, China
| | - Zhiwei Lu
- Center for Advanced Laser Technology, Hebei University of Technology, Tianjin, China
- Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin, China
| | - Sensen Li
- Science and Technology on Electro-Optical Information Security Control Laboratory, Tianjin, China
| | - Wanli Zhao
- Science and Technology on Electro-Optical Information Security Control Laboratory, Tianjin, China
| | - Yuhai Li
- Science and Technology on Electro-Optical Information Security Control Laboratory, Tianjin, China
| | - Tongyu Liu
- Science and Technology on Electro-Optical Information Security Control Laboratory, Tianjin, China
| | - Xiusheng Yan
- Science and Technology on Electro-Optical Information Security Control Laboratory, Tianjin, China
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Abstract
Inorganic semiconductors usually show n-type characterization; the development of p-type inorganic semiconductor material will provide more opportunities for novel devices. In this paper, we investigated the chemical vapor deposition (CVD) of p-type cuprous phosphide (Cu3P) nanofilm and studied its thermal oxidation behavior. Cu3P film was characterized by optical microscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), laser Raman spectroscopy (Raman), and fluorescence spectroscopy (PL). We found that the thickness of film ranged from 4 to 10 nm, and the film is unstable at temperatures higher than room temperature in air. We provide a way to prepare inorganic phosphide nanofilms. In addition, the possible thermal oxidation should be taken into consideration for practical application.
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48
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Jin D, Qiao F, Liu W, Liu Y, Xie Y, Li H. One-step fabrication of MoS 2/Ni 3S 2 with P-doping for efficient water splitting. CrystEngComm 2022. [DOI: 10.1039/d2ce00493c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The p-doped MoS2/Ni3S2/NF heterostructure catalyst designed in this work shows excellent HER and OER performance due to its electronic configuration and chemisorption performance, driving 10 mA cm−2 current density at 95 mV and 136 mV, respectively.
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Affiliation(s)
- Dunyuan Jin
- School of Energy & Power Engineering, Jiangsu University, Zhenjiang 212013, P. R. China
| | - Fen Qiao
- School of Energy & Power Engineering, Jiangsu University, Zhenjiang 212013, P. R. China
| | - Wenjie Liu
- School of Energy & Power Engineering, Jiangsu University, Zhenjiang 212013, P. R. China
| | - Yanzhen Liu
- School of Energy & Power Engineering, Jiangsu University, Zhenjiang 212013, P. R. China
| | - Yi Xie
- State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan 430070, Hubei, China
| | - Haitao Li
- School of Energy & Power Engineering, Jiangsu University, Zhenjiang 212013, P. R. China
- Institute for Energy Research, Jiangsu University, Zhenjiang 212013, Jiangsu, P.R. China
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49
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Fang Y, Wang J, Liu Z, Zhao G, Huang Y, Hou J, Zhang G. Fabrication and enhanced photoelectric properties of a novel Bi 9O 7.5S 6/CdS composite film. Dalton Trans 2022; 51:17022-17029. [DOI: 10.1039/d2dt02931f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
A novel Bi9O7.5S6/CdS composite film with a type-II heterojunction was presented with a superior photoelectric response and photostability under visible-light irradiation.
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Affiliation(s)
- Yongzheng Fang
- School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai, 201418, P. R. China
| | - Jing Wang
- School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai, 201418, P. R. China
| | - Zhanqiang Liu
- Department of Materials Chemistry, Huzhou University, 759 East Erhuan Road, Huzhou 313000, P. R. China
| | - Guoying Zhao
- School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai, 201418, P. R. China
| | - Yanwei Huang
- School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai, 201418, P. R. China
| | - Jingshan Hou
- School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai, 201418, P. R. China
| | - Ganghua Zhang
- School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai, 201418, P. R. China
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50
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Zheng Y, Omar R, Hu Z, Duong T, Wang J, Haick H. Bioinspired Triboelectric Nanosensors for Self-Powered Wearable Applications. ACS Biomater Sci Eng 2021; 9:2087-2102. [PMID: 34961316 DOI: 10.1021/acsbiomaterials.1c01106] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Abstract
The sustainable operation of wearable sensors plays an important role in continuous and longtime health monitoring. Conventional batteries, which are bulky and rigid, do not satisfy these requirements and, rather, cause additional economic burdens and environmental problems by regular replacement of power sources. This article provides a review on an alternative solution in the form of self-powered devices that can harvest energy from the surrounding environment to support the operation of the wearable sensor. The Review starts with an introduction of the self-powered triboelectric nanosensors (TENSs) and its two independent modules: the energy harvester and the sensing module. The Review continues with the TENS-related bioinspired designs for wearable applications, while providing a bird's-eye view of their characteristics and applications. The ongoing challenges and prospects for providing personal healthcare with self-powered TENS are presented and discussed.
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Affiliation(s)
- Youbin Zheng
- Department of Chemical Engineering and Russell Berrie Nanotechnology Institute, Technion-Israel Institute of Technology, Haifa 3200003, Israel
| | - Rawan Omar
- Department of Chemical Engineering and Russell Berrie Nanotechnology Institute, Technion-Israel Institute of Technology, Haifa 3200003, Israel
| | - Zhipeng Hu
- Department of Chemical Engineering and Russell Berrie Nanotechnology Institute, Technion-Israel Institute of Technology, Haifa 3200003, Israel
| | - Tuan Duong
- Department of Chemical Engineering and Russell Berrie Nanotechnology Institute, Technion-Israel Institute of Technology, Haifa 3200003, Israel
| | - Jing Wang
- Department of Chemical Engineering and Russell Berrie Nanotechnology Institute, Technion-Israel Institute of Technology, Haifa 3200003, Israel
| | - Hossam Haick
- Department of Chemical Engineering and Russell Berrie Nanotechnology Institute, Technion-Israel Institute of Technology, Haifa 3200003, Israel.,School of Advanced Materials and Nanotechnology, Interdisciplinary Research Center of Smart Sensors, Xidian University, Xi'an 710126, P. R. China
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