Tunable Spin Characteristic Properties in Spin Valve Devices Based on Hybrid Organic-Inorganic Perovskites

Emerging Spintronic Materials and Functionalities

The explosive growth of the information era has put forward urgent requirements for ultrahigh-speed and extremely efficient computations. In direct contrary to charge-based computations, spintronics aims to use spins as information carriers for data storage, transmission, and decoding, to help fully realize electronic device miniaturization and high integration for next-generation computing technologies. Currently, many novel spintronic materials have been developed with unique properties and multifunctionalities, including organic semiconductors (OSCs), organic-inorganic hybrid perovskites (OIHPs), and 2D materials (2DMs). These materials are useful to fulfill the demand for developing diverse and advanced spintronic devices. Herein, these promising materials are systematically reviewed for advanced spintronic applications. Due to the distinct chemical and physical structures of OSCs, OIHPs, and 2DMs, their spintronic properties (spin transport and spin manipulation) are discussed separately. In addition, some multifunctionalities due to photoelectric and chiral-induced spin selectivity (CISS) are overviewed, including the spin-filter effect, spin-photovoltaics, spin-light emitting devices, and spin-transistor functions. Subsequently, challenges and future perspectives of using these multifunctional materials for the development of advanced spintronics are presented.

Free Halogen Substitution of Chiral Hybrid Metal Halides for Activating the Linear and Nonlinear Chiroptical Properties

Halogen substitution has been proven as an effective approach to the band gap engineering and optoelectronic modulation of organic-inorganic hybrid metal halide (OIHMH) materials. Various high-performance mixed halide OIHMH film materials have been primarily obtained through the substitution of coordinated halogens in their inorganic octahedra. Herein, we propose a new strategy of substitution of free halogen outside the inorganic octahedra for constructing mixed halide OIHMH single crystals with chiral structures, resulting in a boost of their linear and nonlinear chiroptical properties. The substitution from DMA4[InCl6]Cl (DMA = dimethylammonium) to DMA4[InCl6]Br crystals through a facile antisolvent vaporization method produces centimeter-scale single crystals with high thermal stability along with high quantum yield photoluminescence, conspicuous circularly polarized luminescence, and greatly enhanced second harmonic generation (SHG). In particular, the obtained DMA4[InCl6]Br single crystal features an intrinsic chiral structure, exhibiting a significant SHG circular dichroism (SHG-CD) response with a highest reported anisotropy factor (gSHG-CD) of 1.56 among chiral OIHMH materials. The enhancements in both linear and nonlinear chiroptical properties are directly attributed to the modulation of octahedral distortion. The mixed halide OIHMH single crystals obtained by free halogen substitution confine the introduced halogens within free halogen sites of the lattice, thereby ensuring the stability of compositions and properties. The successful employment of such a free halogen substitution approach may broaden the horizon of the regulation of structures and the optoelectronic properties of the OIHMH materials.

Synthesis and Optical Properties of One Year Air-Stable Chiral Sb(III) Halide Semiconductors

Chiral hybrid metal-halide semiconductors (MHS) pose as ideal candidates for spintronic applications owing to their strong spin-orbit coupling (SOC), and long spin relaxation times. Shedding light on the underlying structure-property relationships is of paramount importance for the targeted synthesis of materials with an optimum performance. Herein, we report the synthesis and optical properties of 1D chiral (R-/S-THBTD)SbBr5 (THBTD = 4,5,6,7-tetrahydro-benzothiazole-2,6-diamine) semiconductors using a multifunctional ligand as a countercation and a structure directing agent. (R-/S-THBTD)SbBr5 feature direct and indirect band gap characteristics, exhibiting photoluminescence (PL) light emission at RT that is accompanied by a lifetime of a few ns. Circular dichroism (CD), second harmonic generation (SHG), and piezoresponse force microscopy (PFM) studies validate the chiral nature of the synthesized materials. Density functional theory (DFT) calculations revealed a Rashba/Dresselhaus (R/D) spin splitting, supported by an energy splitting (ER) of 23 and 25 meV, and a Rashba parameter (αR) of 0.23 and 0.32 eV·Å for the R and S analogs, respectively. These values are comparable to those of the 3D and 2D perovskite materials. Notably, (S-THBTD)SbBr5 has been air-stable for a year, a record performance among chiral lead-free MHS. This work demonstrates that low-dimensional, lead-free, chiral semiconductors with exceptional air stability can be acquired, without compromising spin splitting and manipulation performance.

Recent Progress of Organic Semiconductor Materials in Spintronics

Spintronics, a new discipline focusing on the spin-dependent transport process of electrons, has been developing rapidly. Spin valves are the most significant carriers of spintronics utilizing the spin freedom of electrons. It is expected to pierce "Moore's Law" and become the core component in processors of the next generation. Organic semiconductors advance in their adjustable band gap, weak spin-orbit coupling and hyperfine interaction, excellent film-forming property, having enormous promise for spin valves. Here, the principle of spin valves is introduced, and the history and progress in organic spin injection and transport materials are summarized. Then we analyze the influence of spinterface on device performance and introduce reliable methods of constructing organic spin valves. Finally, the challenges for spin valves are discussed, and the future is proposed. We aim to draw the attention of researchers to organic spin valves and promote further research in spintronics through this paper.

Room-Temperature Spin Transport in Metal Nanocluster-Based Spin Valves

As a new type of inorganic-organic hybrid semiconductor, quantum-confined atomically precise metal nanoclusters (MNCs) have been widely applied in the fields of chemical sensing, optical imaging, biomedicine and catalysis. Herein, we successfully design and fabricate the first example of MNC-based spin valves (SVs) that exhibit remarkable magnetoresistance (MR) value up to 1.6 % even at room temperature (300 K). The concomitant photoresponse of MNC-based SVs unambiguously confirms that the spin-polarized electron transmission takes place across the MNC interlayer. Furthermore, the spin-dependent transport property of MNC-based SVs is largely varied by changing the atomic structure of MNCs. Both experimental proofs and quantum chemistry calculations reveal that the atomic structure-discriminative spin transport behavior is attributed to the distinct spin-orbit coupling (SOC) effect of MNCs.

Interfacial Dipole poly(2-ethyl-2-oxazoline) Modification Triggers Simultaneous Band Alignment and Passivation for Air-Stable Perovskite Solar Cells

To promote the performance of perovskite solar cells (PSCs), its theoretical power conversion efficiency (PCE) and high stability, elaborative defect passivation, and interfacial engineering at the molecular level are required to regulate the optoelectric properties and charge transporting process at the perovskite/hole transport layer (HTL) interfaces. Herein, we introduce for the first time a multifunctional dipole polymer poly(2-ethyl-2-oxazoline) (PEOz) between the perovskite and Spiro-OMeTAD HTL in planar n-i-p PSCs, which advances the PSCs toward both high efficiency and excellent stability by stimulating three beneficial effects. First, the ether–oxygen unshared electron pairs in PEOz chemically react with unsaturated Pb²⁺ on the perovskite surfaces by forming a strong Pb–O bond, which effectively reduces the uncoordinated defects on the perovskite surfaces and enhances the absorption ability of the resulting PSCs. Second, the dipole induced by PEOz at the perovskite/HTL interface can decrease the HOMO and LUMO level of Spiro-OMeTAD and optimize the band alignment between these layers, thereby suppressing the interfacial recombination and accelerating the hole transport/extraction ability in the cell. Third, the hygroscopic PEOz thin film can protect perovskite film from water erosion by absorbing the water molecules before perovskite does. Finally, the PEOz-modified PSC exhibits an optimized PCE of 21.86%, with a high short-circuit current density (Jsc) of 24.88 mA/cm², a fill factor (FF) of 0.79, and an open-circuit voltage (Voc) of 1.11 V. The unencapsulated devices also deliver excellent operation stability over 300 h in an ambient atmosphere with a humidity of 30~40% and more than 10 h under thermal stress.

Revealing intrinsic spin coupling in transition metal-doped graphene

Graphene materials offer attractive possibilities in spintronics due to their unique atomic and electronic structures, which is in contrast to their limited applications in the design of sophisticated spintronic devices. This should be attributed to the lack of knowledge about the intrinsic characteristics of graphene materials, especially the diverse correlations between sites within the materials and their roles in spin-signal generation and propagation. This work comprehensively studies the spin couplings between transition metal atoms doped on graphene and reveals their potential application in spintronic device design through the realization of various logic gates. In addition, the effects of the distance between doped metal atoms and the number of carbon layers on the logic gate implementation further verify that the spin-coupling effect can exhibit a certain distance dependence and space propagation. The achievements in this work uncover the potential value of graphene materials and are expected to open up new avenues for exploring their application in the design of sophisticated spintronic devices.

Stimulating and Manipulating Robust Circularly Polarized Photoluminescence in Achiral Hybrid Perovskites

Circularly polarized light (CPL) is essential for optoelectronic and chiro-spintronic applications. Hybrid perovskites, as star optoelectronic materials, have demonstrated CPL activity, which is, however, mostly limited to chiral perovskites. Here, we develop a simple, general, and efficient strategy to stimulate CPL activity in achiral perovskites, which possess rich species, efficient luminescence, and tunable bandgaps. With the formation of van der Waals heterojunctions between chiral and achiral perovskites, a nonequilibrium spin population and thus CPL activity are realized in achiral perovskites by receiving spin-polarized electrons from chiral perovskites. The polarization degree of room-temperature CPL in achiral perovskites is at least one order of magnitude higher than in chiral ones. The CPL polarization degree and emission wavelengths of achiral perovskites can be flexibly designed by tuning chemical compositions, operating temperature, or excitation wavelengths. We anticipate that unlimited types of achiral perovskites can be endowed with CPL activity, benefiting their applications in integrated CPL sources and detectors.

Metal-containing organic compounds for memory and data storage applications

With the upcoming trend of Big Data era, some new types of memory technologies have emerged as substitutes for the traditional Si-based semiconductor memory devices, which are encountering severe scaling down technical obstacles. In particular, the resistance random access memory (RRAM) and magnetic random access memory (MRAM) hold great promise for the in-memory computing, which are regarded as the optimal strategy and pathway to solve the von Neumann bottleneck by high-throughput in situ data processing. As far as the active materials in RRAM and MRAM are concerned, organic semiconducting materials have shown increasing application perspectives in memory devices due to their rich structural diversity and solution processability. With the introduction of metal elements into the backbone of molecules, some new properties and phenomena will emerge accordingly. Consequently, the RRAM and MRAM devices based on metal-containing organic compounds (including the small molecular metal complexes, metallopolymers, metal-organic frameworks (MOFs) and organic-inorganic-hybrid perovskites (OIHPs)) have been widely explored and attracted intense attention. In this review, we highlight the fundamentals of RRAM and MRAM, as well as the research progress of the applications of metal-containing organic compounds in both RRAM and MRAM. Finally, we discuss the challenges and future directions for the research of organic RRAM and MRAM.

Evaluating Lead Halide Perovskite Nanocrystals as a Spin Laser Gain Medium

Spin-polarized charge endows conventional lasers with not only new functionalities but also reduced lasing thresholds thanks to the lifting of spin degeneracy. II-VI and III-V semiconductors have been extensively investigated as spin laser gain mediums; however, the degree of polarization is limited by the light hole and heavy hole degeneracy. Herein, we evaluate the potential of CsPbBr₃ nanocrystals─ones that are featured with low band-edge degeneracy and therefore a high degree of polarization as a result of inverted band structure and large spin-orbit coupling─as a gain medium for spin lasers. Our experiment and numerical modeling results reveal that, within the spin relaxation lifetime, the optical gain threshold can be depressed by polarizing the charge using circularly polarized photoexcitation. However, prolonging the spin relaxation lifetime is required to realize a spin laser.

Magnetization reversal, field-induced transitions andH-Tphase diagram of Y1-xCexCrO3

We report a systematic study of the magnetic phase diagram in theH-Tplane, negative magnetization (NM), exchange interactions and field-induced spin-flop transitions in the distorted perovskite Y_1-xCe_xCrO₃. Locked AFM and weak-FM configurations in Γ₄(G_z,F_y,A_x) phase of YCrO₃(S= 3/2 ground state) unlocks into the Γ₂(F_z,G_y,C_x;FzR,CxR) phase of the canted AFM and FM structures with the dilute substitution of Ce (x⩾ 0.05). The asymmetric and symmetric exchange interaction (J_AS∼ 0.11 meV andJ_S∼ 0.85 meV) between the trivalent Ce and Cr enable the positive quartic-anisotropy field (HK4∼ 2.85 × 10²Oe) along with the second order anisotropy field (HK2∼ 5.93 × 10²Oe). Unlike the pristine YCrO₃compound, the Ce incorporated system exhibits a giant fourth-order anisotropy constant (K₄= 1.35 × 10⁵erg/c.c.) due to the asymmetric exchange interaction between the trivalent Ce-Cr which further lifts the free energy of the system and causes lag in the onset of AFM ordering showing the significant thermal hysteresis (ΔT∼ 10 K) in the field-cooled (FC)-warming measurement protocol as compared to the FC-cooling mode. The H-T phase diagram, mapped from the isothermal magnetization data and differential magnetic susceptibility data with different measurement protocols clearly distinguishes three prominent regions below theT_N(∼150 K), viz (i) long-range canted AFM + weak FM phase (Γ₄(G_z,F_y,A_x)), (ii) Γ₂₄mixed phase and (iii) robust Γ₂(F_z,G_y,C_x;FzR,CxR) AFM + FM phases. Tunable spin-flopped transition (∼ 30 kOe), significant negative exchange-bias field (H_EB∼ 2.5 kOe), huge coercive field (H_C∼ 22 kOe) and large NM (ΔM∼ 280 emu/mole) are the unique characteristic features of the current investigated system.

Optically Induced Static Magnetization in Metal Halide Perovskite for Spin-Related Optoelectronics

Understanding the feasibility to couple semiconducting and magnetic properties in metal halide perovskites through interface design opens new opportunities for creating the next generation spin-related optoelectronics. In this work, a fundamentally new phenomenon of optically induced magnetization achieved by coupling photoexcited orbital magnetic dipoles with magnetic spins at perovskite/ferromagnetic interface is discovered. The depth-sensitive polarized neutron reflectometry combined with in situ photoexcitation setup, constitutes key evidence of this novel effect. It is demonstrated that a circularly polarized photoexcitation induces a stable magnetization signal within the depth up to 7.5 nm into the surface of high-quality perovskite (MAPbBr3) film underneath a ferromagnetic cobalt layer at room temperature. In contrast, a linearly polarized light does not induce any detectable magnetization in the MAPbBr3. The observation reveals that photoexcited orbital magnetic dipoles at the surface of perovskite are coupled with the spins of the ferromagnetic atoms at the interface, leading to an optically induced magnetization within the perovskite's surface. The finding demonstrates that perovskite semiconductor can be bridged with magnetism through optically controllable method at room temperature in this heterojunction design. This provides the new concept of utilizing spin and orbital degrees of freedom in new-generation spin-related optoelectronic devices.

Chirality-Dependent Circular Photogalvanic Effect in Enantiomorphic 2D Organic-Inorganic Hybrid Perovskites

The control of the optoelectronic properties of 2D organic-inorganic hybrid perovskite (2D-OIHP) lead halides is an increasingly prevalent topic. Herein, the observation of the circular photogalvanic effect (CPGE) in new enantiomorphic 2D-OIHP lead iodides is reported, which are synthesized as a first OIHP-related system belonging to a chiral space group by incorporating organic chiral cations into the inorganic layers of lead iodides. The CPGE is an optoelectronic phenomenon associated with the spin-orbit coupling of heavy atoms in noncentrosymmetric systems. Owing to the CPGE, light-helicity-dependent steady photocurrents are generated without an external bias voltage under the irradiation of circularly polarized light. Furthermore, the sign reversal of the CPGE photocurrent depending on the chirality of the designed 2D-OIHP lead iodides is observed. This result indicates formation of the theoretically predicted radial spin-polarized texture in k-space of chiral systems owing to spin-momentum locking. Hence, chiral 2D-OIHP lead halides can be a promising platform for engineering opto-spintronic functionalities.

Extremely Long Spin Lifetime of Light-Emitting States in Quasi-2D Perovskites through Orbit-Orbit Interaction

This paper reports an extremely long spin relaxation time of optically polarized light-emitting states at room temperature in quasi-2D perovskites [(PEA)₂(MA)₄Pb₅Br₁₆ with n = 5], when the long-range orbit-orbit interaction between excited states is developed through orbital polarization. Our studies found that the quasi-2D perovskite [(PEA)₂(MA)₄Pb₅Br₁₆ with n = 5] demonstrates a long-range orbit-orbit interaction between excited states to conserve the spins of optically polarized light-emitting states, identified by the positive change on photoluminescence intensity (+ΔPL) in steady state upon switching the photoexcitation from linear to circular polarization. Meanwhile, the PL circular polarization (σ⁺σ⁺ - σ⁺σ^-) can maintain in nanosecond under fixed photoexcitation (σ⁺). In contrast, the 2D/3D mixed perovskite (n > 5) shows a short-range orbit-orbit interaction between excited states through orbital magnetic dipoles, identified by the -ΔPL by switching from linear to circular photoexcitation. At the same time, the spin lifetime of light-emitting states becomes undetectable.

Tuning Magnetism and Photocurrent in Mn-Doped Organic-Inorganic Perovskites

Organic-inorganic perovskites have attracted increasing attention in recent years owing to their excellent optoelectronic properties and photovoltaic performance. In this work, the prototypical hybrid perovskite CH₃NH₃PbI₃ is turned into a ferromagnetic material by doping Mn, which enables simultaneous control of both charge and spin of electrons. The room-temperature ferromagnetism originates from the double exchange interaction between Mn²⁺-I^--Mn³⁺ ions. Furthermore, it is discovered that the magnetic field can effectively modulate the photovoltaic properties of Mn-doped perovskite films. The photocurrent of Mn-doped perovskite solar cells increases by 0.5% under a magnetic field of 1 T, whereas the photocurrent of undoped perovskite decreases by 3.3%. These findings underscore the potential of Mn-doped perovskites as novel solution-processed ferromagnetic material and promote their application in multifunctional photoelectric-magnetic devices.

Enhanced Spin Transport of Conjugated Polymer in the Semiconductor/Insulating Polymer Blend

Conjugated polymers are of high potential in the development of spintronic devices. In this paper, we report systematic studies on spin transport properties of a semiconducting polymer PBDTTT-C-T in the permalloy/polymer/Pt trilayer using the spin pumping method. Pure spin current with long spin relaxation time is observed via the inverse spin Hall effect (ISHE) measurements. Furthermore, spin current is also found to propagate through the blend film consisting of a small amount of PBDTTT-C-T in an insulating matrix. The polymer blend exhibits a remarkably enhanced spin relaxation length (56 nm) and carrier mobility compared to pristine PBDTTT-C-T. From film microstructural characterizations, we propose that the enhanced spin/carrier transport properties are attributed to the formation of interlinked nanonetwork comprising of the PBDTTT-C-T chain bundles in the inert matrix to afford efficient intrachain charge conduction pathway. Temperature- dependent ISHE measurements support the spin-orbit coupling dominated spin relaxation mechanism.

Light-Enhanced Spin Diffusion in Hybrid Perovskite Thin Films and Single Crystals

Organolead trihalide perovskites have attracted substantial interest with regard to applications in charge-based photovoltaic and optoelectronic devices because of their low processing costs and remarkable light absorption and charge transport properties. Although spin is an intrinsic quantum descriptor of a particle and spintronics has been a central research theme in condensed matter physics, few studies have explored the spin degree of freedom in the emerging hybrid perovskites. Here, we report the characterization of a spin valve that uses hybrid perovskite films as the spin-transporting medium between two ferromagnetic electrodes. Because of the light-responsive nature of the hybrid perovskite, a high magnetoresistance of 97% and a large spin-diffusion length of 81 nm were achieved at 10 K under light illumination in polycrystalline films. Furthermore, by using thin perovskite single crystals, we discovered that the spin-diffusion length was able to reach 1 μm at low temperatures. Our results indicate that the spin relaxation is not significant as previously expected in such lead-containing materials and demonstrate the potential of low-temperature-processed hybrid perovskites as new active materials in spintronic devices.

Photoluminescence spectral broadening, chirality transfer and amplification of chiral perovskite materials (R-X-p-mBZA)2PbBr4 (X = H, F, Cl, Br) regulated by van der Waals and halogen atoms interactions

We introduced halogen-substituted chiral molecules as A-site cations to synthesize a series of novel organic–inorganic hybrid 2D chiral perovskite materials (R-X-p-mBZA)₂PbBr₄ (X = H, F, Cl, Br; p: para-position; mBZA = α-methylbenzylamine).