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Tien NT, Thao PTB, Dang NH, Khanh ND, Dien VK. Insights into Structural, Electronic, and Transport Properties of Pentagonal PdSe 2 Nanotubes Using First-Principles Calculations. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13111728. [PMID: 37299633 DOI: 10.3390/nano13111728] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/05/2023] [Revised: 05/15/2023] [Accepted: 05/15/2023] [Indexed: 06/12/2023]
Abstract
One-dimensional (1D) novel pentagonal materials have gained significant attention as a new class of materials with unique properties that could influence future technologies. In this report, we studied the structural, electronic, and transport properties of 1D pentagonal PdSe2 nanotubes (p-PdSe2 NTs). The stability and electronic properties of p-PdSe2 NTs with different tube sizes and under uniaxial strain were investigated using density functional theory (DFT). The studied structures showed an indirect-to-direct bandgap transition with slight variation in the bandgap as the tube diameter increased. Specifically, (5 × 5) p-PdSe2 NT, (6 × 6) p-PdSe2 NT, (7 × 7) p-PdSe2 NT, and (8 × 8) p-PdSe2 NT are indirect bandgap semiconductors, while (9 × 9) p-PdSe2 NT exhibits a direct bandgap. In addition, under low uniaxial strain, the surveyed structures were stable and maintained the pentagonal ring structure. The structures were fragmented under tensile strain of 24%, and compression of -18% for sample (5 × 5) and -20% for sample (9 × 9). The electronic band structure and bandgap were strongly affected by uniaxial strain. The evolution of the bandgap vs. the strain was linear. The bandgap of p-PdSe2 NT experienced an indirect-direct-indirect or a direct-indirect-direct transition when axial strain was applied. A deformability effect in the current modulation was observed when the bias voltage ranged from about 1.4 to 2.0 V or from -1.2 to -2.0 V. Calculation of the field effect I-V characteristic showed that the on/off ratio was large with bias potentials from 1.5 to 2.0 V. This ratio increased when the inside of the nanotube contained a dielectric. The results of this investigation provide a better understanding of p-PdSe2 NTs, and open up potential applications in next-generation electronic devices and electromechanical sensors.
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Affiliation(s)
- Nguyen Thanh Tien
- College of Natural Sciences, Can Tho University, Can Tho 90000, Vietnam
| | | | - Nguyen Hai Dang
- College of Natural Sciences, Can Tho University, Can Tho 90000, Vietnam
- Faculty of Fundamental Science, Nam Can Tho University, Can Tho 90000, Vietnam
| | - Nguyen Duy Khanh
- High-Performance Computing Laboratory (HPC Lab), Information Technology Center, Thu Dau Mot University, Thu Dau Mot 75100, Vietnam
| | - Vo Khuong Dien
- Department of Physics, National Cheng Kung University, Tainan 701, Taiwan
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Zhang Q, Liu C, Zhou P. 2D materials readiness for the transistor performance breakthrough. iScience 2023; 26:106673. [PMID: 37216126 PMCID: PMC10192534 DOI: 10.1016/j.isci.2023.106673] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/24/2023] Open
Abstract
As the size of the transistor scales down, this strategy has confronted challenges because of the fundamental limits of silicon materials. Besides, more and more energy and time are consumed by the data transmission out of transistor computing because of the speed mismatching between the computing and memory. To meet the energy efficiency demands of big data computing, the transistor should have a smaller feature size and store data faster to overcome the energy burden of computing and data transfer. Electron transport in two-dimensional (2D) materials is constrained within a 2D plane and different materials are assembled by the van der Waals force. Owning to the atomic thickness and dangling-bond-free surface, 2D materials have demonstrated advantages in transistor scaling-down and heterogeneous structure innovation. In this review, from the performance breakthrough of 2D transistors, we discuss the opportunities, progress and challenges of 2D materials in transistor applications.
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Affiliation(s)
- Qing Zhang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Chunsen Liu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
- Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China
| | - Peng Zhou
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
- Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China
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Wang Z, Ali N, Ali F, Choi H, Shin H, Yoo WJ. Probing Intrinsic Defect-Induced Trap States and Hopping Transport in Two-Dimensional PdSe 2 Semiconductor Devices. ACS APPLIED MATERIALS & INTERFACES 2022; 14:55787-55794. [PMID: 36474350 DOI: 10.1021/acsami.2c17821] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Palladium diselenide (PdSe2), as an emerging two-dimensional (2D) layered material, is gaining growing attention in nanoelectronics and optoelectronics due to its thickness-dependent band gap, high carrier mobility, and good air stability. However, its asymmetric pentagon structure is inclined to breed defects. Herein, the intrinsic Se vacancy-induced trap states and their influence on the hopping transport in PdSe2 are systematically investigated. We provide direct evidence that Se vacancies exist in the fresh PdSe2 samples, which results in the localized trapping states inside the band gap. For the few-layer PdSe2, at 77 K, the trap density (Dit) near the midgap is about 2.2 × 1013 cm-2 eV-1, whereas at 295 K, the Dit value increases to ∼7.1 × 1013 cm-2 eV-1. By comparison, the multilayer PdSe2 shows nonobvious temperature-dependent trap behaviors with almost unchanged Dit values of ∼8.1 × 1012 cm-2 eV-1 at midgap in the temperature range between 77 and 295 K. Thus, trap states in the few-layer PdSe2 are more vulnerable to temperature effect. Transport measurements demonstrated that both few-layer and multilayer PdSe2 field-effect transistor (FET) devices show n-type dominant ambipolar behaviors. The electron mobility in the multilayer PdSe2 FET is nearly 15-fold higher than that in the few-layer PdSe2 FET at 315 K, probably owing to the decreased effective mass and suppression of charge impurity scattering in the thicker channel material. However, both FET devices exhibit variable-range hopping over a temperature range from 77 to 240 K and thermally activated hopping at temperatures above 240 K. The hopping transport mechanism is strongly associated with the Se vacancy-induced localized states with poor screening and strong potential fluctuations. This study reveals the important role of structural defects in tailoring and improving the charge transport properties of PdSe2.
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Affiliation(s)
- Zhenping Wang
- Department of Nano Science and Technology, SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do16419, South Korea
| | - Nasir Ali
- Department of Nano Science and Technology, SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do16419, South Korea
| | - Fida Ali
- Department of Nano Science and Technology, SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do16419, South Korea
| | - Hyungyu Choi
- Department of Nano Science and Technology, SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do16419, South Korea
| | - Hoseong Shin
- Department of Nano Science and Technology, SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do16419, South Korea
| | - Won Jong Yoo
- Department of Nano Science and Technology, SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do16419, South Korea
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Jamdagni P, Kumar A, Srivastava S, Pandey R, Tankeshwar K. Photocatalytic properties of anisotropic β-PtX 2 (X = S, Se) and Janus β-PtSSe monolayers. Phys Chem Chem Phys 2022; 24:22289-22297. [PMID: 36098214 DOI: 10.1039/d2cp02549c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The highly efficient photocatalytic water splitting process to produce clean energy requires novel semiconductor materials to achieve a high solar-to-hydrogen energy conversion efficiency. Herein, the photocatalytic properties of anisotropic β-PtX2 (X = S, Se) and Janus β-PtSSe monolayers were investigated based on the density functional theory. The small cleavage energy for β-PtS2 (0.44 J m-2) and β-PtSe2 (0.40 J m-2) endorses the possibility of mechanical exfoliation from their respective layered bulk materials. The calculated results revealed that the β-PtX2 monolayers have an appropriate bandgap (∼1.8-2.6 eV) enclosing the water redox potential, light absorption coefficient (∼104 cm-1), and exciton binding energy (∼0.5-0.7 eV), which facilitates excellent visible-light-driven photocatalytic performance. Remarkably, the inherent structural anisotropy leads to an anisotropic high carrier mobility (up to ∼5 × 103 cm2 V-1 S-1), leading to a fast transport of photogenerated carriers. Notably, the required small external potential to realize hydrogen evolution reaction and oxygen evolution reaction processes with an excellent solar-to-hydrogen energy conversion efficiency for β-PtSe2 (∼16%) and β-PtSSe (∼18%) makes them promising candidates for solar water splitting applications.
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Affiliation(s)
- Pooja Jamdagni
- Department of Physics and Astrophysics, Central University of Haryana, Mahendragarh, 123031, India.
| | - Ashok Kumar
- Department of Physics, Central University of Punjab, Bathinda, 151401, India
| | - Sunita Srivastava
- Department of Physics and Astrophysics, Central University of Haryana, Mahendragarh, 123031, India.
| | - Ravindra Pandey
- Department of Physics, Michigan Technological University, Houghton, MI, 49931, USA.
| | - K Tankeshwar
- Department of Physics and Astrophysics, Central University of Haryana, Mahendragarh, 123031, India.
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Kumar P, Meng AC, Jo K, Stach EA, Jariwala D. Interfacial Reaction and Diffusion at the One-Dimensional Interface of Two-Dimensional PtSe 2. NANO LETTERS 2022; 22:4733-4740. [PMID: 35675304 DOI: 10.1021/acs.nanolett.2c00874] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D) PtSe2 has potential applications in near-infrared optoelectronics because its band gap can be tuned by varying the layer thickness. There are several different platinum-selenide phases with different stoichiometries that result from high-temperature processing. In this report, we use in situ scanning/transmission electron microscopy (STEM) to investigate high-temperature phase transitions in 2D PtSe2 and observe interfacial reactions as well as the Kirkendall effect. The 2D nature of PtSe2 plays a key role in the unique one-dimensional interfaces that result during the formation of Se-poor phases (PtSe and PtSe1-x) at the edges of the PtSe2 crystals. The activation energy extracted for this formation suggests that the process is mediated by Se vacancies, as evidenced by the large strain variations in the material made via 4D STEM measurements. The observation of the Kirkendall effect in a 2D material suggests routes to engineer 1D edge chemistry for contact engineering in device applications.
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Affiliation(s)
- Pawan Kumar
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Andrew C Meng
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Kiyoung Jo
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Eric A Stach
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
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Ding C, Yao Y, Zhu L, Shang H, Xu P, Liu X, Lin J, Wang F, Zhan X, He J, Wang Z. Growth, Raman Scattering Investigation and Photodetector Properties of 2D SnP. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2108017. [PMID: 35277924 DOI: 10.1002/smll.202108017] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/22/2022] [Revised: 02/24/2022] [Indexed: 06/14/2023]
Abstract
As an important metal phosphides material, 2D tin phosphides (SnPx 0 < x ≤ 3) have been theoretically predicted to have intriguing physicochemical properties and potential applications in electronics, optoelectronics, and energy fields. However, the synthesis of high-quality 2D SnP single crystal has not been reported due to the lack of efficiency and reliable growth method. Here, a facile atmospheric pressure chemical vapor deposition (APCVD) method is developed to realize the growth of high-quality 2D SnP nanosheets, by employing tin (Sn) foil as both liquid metal substrates and reaction precursor. Temperature-dependent and angle-resolved polarization Raman spectra observed Raman peaks located at 142.6, 303.3, and 444.2 cm-1 are concluded to belong to A1g mode, which are consistent with the theoretical calculation results. Moreover, the field-effect transistor (FET) devices based on SnP nanosheets show a typical n-type characteristic with an on/off ratio of 103 at 200 K. SnP nanosheets also demonstrate excellent photoresponse performance under the illumination of 473, 532, and 639 nm lasers, which can be tuned by Vgs , Vds , and light power density. It is believed that these findings can provide the first-hand experimental information for the future study of 2D SnP nanosheets.
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Affiliation(s)
- Chuyun Ding
- Department of Physics, Shanghai Key Laboratory of Materials Protection and Advanced Materials in Electric Power, Shanghai University of Electric Power, Shanghai, 200090, China
- National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Yuyu Yao
- National Center for Nanoscience and Technology, Beijing, 100190, China
- Sino-Danish college, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Leilei Zhu
- Department of Chemical Physics, University of Science and Technology of China, 96 Jinzhai Road, Hefei, Anhui Province, 230026, China
| | - Honghui Shang
- State Key Laboratory of Computer Architecture, Institute of Computing Technology, Chinese Academy of Sciences, Beijing, 100190, China
| | - Peng Xu
- National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Xiaolin Liu
- Department of Physics, Shanghai Key Laboratory of Materials Protection and Advanced Materials in Electric Power, Shanghai University of Electric Power, Shanghai, 200090, China
| | - Jia Lin
- Department of Physics, Shanghai Key Laboratory of Materials Protection and Advanced Materials in Electric Power, Shanghai University of Electric Power, Shanghai, 200090, China
| | - Feng Wang
- National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Xueying Zhan
- National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Jun He
- School of physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Zhenxing Wang
- National Center for Nanoscience and Technology, Beijing, 100190, China
- Sino-Danish college, University of Chinese Academy of Sciences, Beijing, 100049, China
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7
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Ko W, Gai Z, Puretzky AA, Liang L, Berlijn T, Hachtel JA, Xiao K, Ganesh P, Yoon M, Li AP. Understanding Heterogeneities in Quantum Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2106909. [PMID: 35170112 DOI: 10.1002/adma.202106909] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2021] [Revised: 02/08/2022] [Indexed: 06/14/2023]
Abstract
Quantum materials are usually heterogeneous, with structural defects, impurities, surfaces, edges, interfaces, and disorder. These heterogeneities are sometimes viewed as liabilities within conventional systems; however, their electronic and magnetic structures often define and affect the quantum phenomena such as coherence, interaction, entanglement, and topological effects in the host system. Therefore, a critical need is to understand the roles of heterogeneities in order to endow materials with new quantum functions for energy and quantum information science applications. In this article, several representative examples are reviewed on the recent progress in connecting the heterogeneities to the quantum behaviors of real materials. Specifically, three intertwined topic areas are assessed: i) Reveal the structural, electronic, magnetic, vibrational, and optical degrees of freedom of heterogeneities. ii) Understand the effect of heterogeneities on the behaviors of quantum states in host material systems. iii) Control heterogeneities for new quantum functions. This progress is achieved by establishing the atomistic-level structure-property relationships associated with heterogeneities in quantum materials. The understanding of the interactions between electronic, magnetic, photonic, and vibrational states of heterogeneities enables the design of new quantum materials, including topological matter and quantum light emitters based on heterogenous 2D materials.
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Affiliation(s)
- Wonhee Ko
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Zheng Gai
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Alexander A Puretzky
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Liangbo Liang
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Tom Berlijn
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Jordan A Hachtel
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Kai Xiao
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Panchapakesan Ganesh
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Mina Yoon
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - An-Ping Li
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
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Ryu GH, Jung GS, Park H, Chang RJ, Warner JH. Atomistic Mechanics of Torn Back Folded Edges of Triangular Voids in Monolayer WS 2. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2104238. [PMID: 34708519 DOI: 10.1002/smll.202104238] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/19/2021] [Revised: 09/07/2021] [Indexed: 06/13/2023]
Abstract
Triangular nanovoids in 2D materials transition metal dichalcogenides have vertex points that cause stress concentration and lead to sharp crack propagation and failure. Here, the atomistic mechanics of back folding around triangular nanovoids in monolayer WS2 sheets is examined. Combining atomic-resolution images from annular dark-field scanning transmission electron microscopy with reactive molecular modelling, it is revealed that the folding edge formation has statistical preferences under geometric conditions based on the orientation mismatch. It is further investigated how loading directions and strong interlayer friction, interplay with WS2 lattice's crack preference, govern the deformation and fracture pattern around folding edges. These results provide fundamental insights into the combination of fracture and folding in flexible monolayer crystals and the resultant Moiré lattices.
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Affiliation(s)
- Gyeong Hee Ryu
- School of Materials Science and Engineering, Gyeongsang National University, Jinju, 52828, Republic of Korea
| | - Gang Seob Jung
- Computational Sciences and Engineering Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Hyoju Park
- Materials Graduate Program, Texas Materials Institute, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, TX, 78712, USA
| | - Ren-Jie Chang
- Department of Materials, University of Oxford, 16 Parks Road, Oxford, OX1 3PH, UK
| | - Jamie H Warner
- Walker Department of Mechanical Engineering, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, TX, 78712, USA
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Wang Y, Pang J, Cheng Q, Han L, Li Y, Meng X, Ibarlucea B, Zhao H, Yang F, Liu H, Liu H, Zhou W, Wang X, Rummeli MH, Zhang Y, Cuniberti G. Applications of 2D-Layered Palladium Diselenide and Its van der Waals Heterostructures in Electronics and Optoelectronics. NANO-MICRO LETTERS 2021; 13:143. [PMID: 34138389 PMCID: PMC8203759 DOI: 10.1007/s40820-021-00660-0] [Citation(s) in RCA: 19] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2021] [Accepted: 05/11/2021] [Indexed: 05/07/2023]
Abstract
The rapid development of two-dimensional (2D) transition-metal dichalcogenides has been possible owing to their special structures and remarkable properties. In particular, palladium diselenide (PdSe2) with a novel pentagonal structure and unique physical characteristics have recently attracted extensive research interest. Consequently, tremendous research progress has been achieved regarding the physics, chemistry, and electronics of PdSe2. Accordingly, in this review, we recapitulate and summarize the most recent research on PdSe2, including its structure, properties, synthesis, and applications. First, a mechanical exfoliation method to obtain PdSe2 nanosheets is introduced, and large-area synthesis strategies are explained with respect to chemical vapor deposition and metal selenization. Next, the electronic and optoelectronic properties of PdSe2 and related heterostructures, such as field-effect transistors, photodetectors, sensors, and thermoelectric devices, are discussed. Subsequently, the integration of systems into infrared image sensors on the basis of PdSe2 van der Waals heterostructures is explored. Finally, future opportunities are highlighted to serve as a general guide for physicists, chemists, materials scientists, and engineers. Therefore, this comprehensive review may shed light on the research conducted by the 2D material community.
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Affiliation(s)
- Yanhao Wang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, People's Republic of China
| | - Jinbo Pang
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Shandong, Jinan, 250022, People's Republic of China.
| | - Qilin Cheng
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Shandong, Jinan, 250022, People's Republic of China
| | - Lin Han
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, People's Republic of China.
| | - Yufen Li
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Shandong, Jinan, 250022, People's Republic of China
| | - Xue Meng
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, People's Republic of China
| | - Bergoi Ibarlucea
- Institute for Materials Science and Max Bergmann Center of Biomaterials, Technische Universität Dresden, 01069, Dresden, Germany
- Center for Advancing Electronics Dresden, Technische Universität Dresden, 01069, Dresden, Germany
- Dresden Center for Computational Materials Science, Technische Universität Dresden, 01062, Dresden, Germany
- Dresden Center for Intelligent Materials (GCL DCIM), Technische Universität Dresden, 01062, Dresden, Germany
| | - Hongbin Zhao
- State Key Laboratory of Advanced Materials for Smart Sensing, GRINM Group Co. Ltd., Xinwai Street 2, Beijing, 100088, People's Republic of China
| | - Feng Yang
- Department of Chemistry, Guangdong Provincial Key Laboratory of Catalytic Chemistry, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, People's Republic of China
| | - Haiyun Liu
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Shandong, Jinan, 250022, People's Republic of China
| | - Hong Liu
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Shandong, Jinan, 250022, People's Republic of China.
- State Key Laboratory of Crystal Materials, Center of Bio and Micro/Nano Functional Materials, Shandong University, 27 Shandanan Road, Jinan, 250100, People's Republic of China.
| | - Weijia Zhou
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Shandong, Jinan, 250022, People's Republic of China
| | - Xiao Wang
- Shenzhen Institutes of Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, 1068 Xueyuan Avenue, Shenzhen University Town, Shenzhen, 518055, People's Republic of China
| | - Mark H Rummeli
- College of Energy Soochow Institute for Energy and Materials Innovations, Soochow University, Suzhou, 215006, People's Republic of China
- Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, People's Republic of China
- Centre of Polymer and Carbon Materials, Polish Academy of Sciences, M. Curie Sklodowskiej 34, 41-819, Zabrze, Poland
- Institute for Complex Materials, IFW Dresden 20 Helmholtz Strasse, 01069, Dresden, Germany
- Institute of Environmental Technology VŠB-Technical University of Ostrava, 17. listopadu 15, Ostrava, 708 33, Czech Republic
| | - Yu Zhang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, People's Republic of China.
| | - Gianaurelio Cuniberti
- Institute for Materials Science and Max Bergmann Center of Biomaterials, Technische Universität Dresden, 01069, Dresden, Germany
- Center for Advancing Electronics Dresden, Technische Universität Dresden, 01069, Dresden, Germany
- Dresden Center for Computational Materials Science, Technische Universität Dresden, 01062, Dresden, Germany
- Dresden Center for Intelligent Materials (GCL DCIM), Technische Universität Dresden, 01062, Dresden, Germany
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DiStefano JG, Murthy AA, Hao S, Dos Reis R, Wolverton C, Dravid VP. Topology of transition metal dichalcogenides: the case of the core-shell architecture. NANOSCALE 2020; 12:23897-23919. [PMID: 33295919 DOI: 10.1039/d0nr06660e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Non-planar architectures of the traditionally flat 2D materials are emerging as an intriguing paradigm to realize nascent properties within the family of transition metal dichalcogenides (TMDs). These non-planar forms encompass a diversity of curvatures, morphologies, and overall 3D architectures that exhibit unusual characteristics across the hierarchy of length-scales. Topology offers an integrated and unified approach to describe, harness, and eventually tailor non-planar architectures through both local and higher order geometry. Topological design of layered materials intrinsically invokes elements highly relevant to property manipulation in TMDs, such as the origin of strain and its accommodation by defects and interfaces, which have broad implications for improved material design. In this review, we discuss the importance and impact of geometry on the structure and properties of TMDs. We present a generalized geometric framework to classify and relate the diversity of possible non-planar TMD forms. We then examine the nature of curvature in the emerging core-shell architecture, which has attracted high interest due to its versatility and design potential. We consider the local structure of curved TMDs, including defect formation, strain, and crystal growth dynamics, and factors affecting the morphology of core-shell structures, such as synthesis conditions and substrate morphology. We conclude by discussing unique aspects of TMD architectures that can be leveraged to engineer targeted, exotic properties and detail how advanced characterization tools enable detection of these features. Varying the topology of nanomaterials has long served as a potent methodology to engineer unusual and exotic properties, and the time is ripe to apply topological design principles to TMDs to drive future nanotechnology innovation.
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Affiliation(s)
- Jennifer G DiStefano
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA.
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Tai KL, Chen J, Wen Y, Park H, Zhang Q, Lu Y, Chang RJ, Tang P, Allen CS, Wu WW, Warner JH. Phase Variations and Layer Epitaxy of 2D PdSe 2 Grown on 2D Monolayers by Direct Selenization of Molecular Pd Precursors. ACS NANO 2020; 14:11677-11690. [PMID: 32809801 DOI: 10.1021/acsnano.0c04230] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
Two-dimensional (2D) materials and van der Waals heterostructures with atomic-scale thickness provide enormous potential for advanced science and technology. However, insufficient knowledge of compatible synthesis impedes wafer-scale production. PdSe2 and Pd2Se3 are two of the noble transition-metal chalcogenides with excellent physical properties that have recently emerged as promising materials for electronics, optoelectronics, catalyst, and sensors. This research presents a feasible approach to synthesize PdSe2 and Pd2Se3 with inherently asymmetric structure on honeycomb lattice 2D monolayer substrates of graphene and MoS2. We directly deposit a molecular transition-metal precursor complex on the surface of the 2D substrates, followed by low-temperature selenization by chemical vapor flow. Parameter control leads to tuning of the material from monolayer nanocrystals with Pd2Se3 phase, to continuous few-layer PdSe2 films. Annular dark-field scanning transmission electron microscopy (ADF-STEM) reveals the structure, phase variations, and heteroepitaxy at the atomic level. PdSe2 with unconventional interlayer stacking shifts appeared as the kinetic product, whereas the bilayer PdSe2 and monolayer Pd2Se3 are the thermodynamic product. The epitaxial alignment of interlayer rotation and translation between the PdSe2 and underlying 2D substrate was also revealed by ADF-STEM. These results offer both nanoscale and atomic-level insights into direct growth of van der Waals heterostructures, as well as an innovative method for 2D synthesis by predetermined nucleation.
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Affiliation(s)
- Kuo-Lun Tai
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (R.O.C.)
| | - Jun Chen
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Yi Wen
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Hyoju Park
- Walker Department of Mechanical Engineering, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, Texas 78712, United States
- Materials Graduate Program, Texas Materials Institute, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, Texas 78712, United States
| | - Qianyang Zhang
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Yang Lu
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Ren-Jie Chang
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Peng Tang
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Christopher S Allen
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
- Electron Physical Sciences Imaging Center, Diamond Light Source Ltd., Didcot, Oxfordshire OX11 0DE, United Kingdom
| | - Wen-Wei Wu
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (R.O.C.)
- Center for the Intelligent Semiconductor Nano-system Technology Research, National Chiao Tung University, Hsinchu 300, Taiwan
| | - Jamie H Warner
- Walker Department of Mechanical Engineering, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, Texas 78712, United States
- Materials Graduate Program, Texas Materials Institute, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, Texas 78712, United States
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12
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Liu C, Chen H, Wang S, Liu Q, Jiang YG, Zhang DW, Liu M, Zhou P. Two-dimensional materials for next-generation computing technologies. NATURE NANOTECHNOLOGY 2020; 15:545-557. [PMID: 32647168 DOI: 10.1038/s41565-020-0724-3] [Citation(s) in RCA: 232] [Impact Index Per Article: 58.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/03/2020] [Accepted: 06/02/2020] [Indexed: 05/22/2023]
Abstract
Rapid digital technology advancement has resulted in a tremendous increase in computing tasks imposing stringent energy efficiency and area efficiency requirements on next-generation computing. To meet the growing data-driven demand, in-memory computing and transistor-based computing have emerged as potent technologies for the implementation of matrix and logic computing. However, to fulfil the future computing requirements new materials are urgently needed to complement the existing Si complementary metal-oxide-semiconductor technology and new technologies must be developed to enable further diversification of electronics and their applications. The abundance and rich variety of electronic properties of two-dimensional materials have endowed them with the potential to enhance computing energy efficiency while enabling continued device downscaling to a feature size below 5 nm. In this Review, from the perspective of matrix and logic computing, we discuss the opportunities, progress and challenges of integrating two-dimensional materials with in-memory computing and transistor-based computing technologies.
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Affiliation(s)
- Chunsen Liu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China
- School of Computer Science, Fudan University, Shanghai, China
| | - Huawei Chen
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China
| | - Shuiyuan Wang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China
| | - Qi Liu
- Frontier Institute of Chip and System, Fudan University, Shanghai, China
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
| | - Yu-Gang Jiang
- School of Computer Science, Fudan University, Shanghai, China
| | - David Wei Zhang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China
| | - Ming Liu
- Frontier Institute of Chip and System, Fudan University, Shanghai, China
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
| | - Peng Zhou
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China.
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13
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Kempt R, Kuc A, Heine T. Two-Dimensional Noble-Metal Chalcogenides and Phosphochalcogenides. Angew Chem Int Ed Engl 2020; 59:9242-9254. [PMID: 32065703 PMCID: PMC7463173 DOI: 10.1002/anie.201914886] [Citation(s) in RCA: 34] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/21/2019] [Indexed: 11/07/2022]
Abstract
Noble-metal chalcogenides, dichalcogenides, and phosphochalcogenides are an emerging class of two-dimensional materials. Quantum confinement (number of layers) and defect engineering enables their properties to be tuned over a broad range, including metal-to-semiconductor transitions, magnetic ordering, and topological surface states. They possess various polytypes, often of similar formation energy, which can be accessed by selective synthesis approaches. They excel in mechanical, optical, and chemical sensing applications, and feature long-term air and moisture stability. In this Minireview, we summarize the recent progress in the field of noble-metal chalcogenides and phosphochalcogenides and highlight the structural complexity and its impact on applications.
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Affiliation(s)
- Roman Kempt
- Faculty of Chemistry and Food ChemistryTechnische Universität DresdenBergstrasse 6601069DresdenGermany
| | - Agnieszka Kuc
- Institute of Resource EcologyHelmholtz-Zentrum Dresden-RossendorfPermoserstrasse 1504318LeipzigGermany
| | - Thomas Heine
- Faculty of Chemistry and Food ChemistryTechnische Universität DresdenBergstrasse 6601069DresdenGermany
- Institute of Resource EcologyHelmholtz-Zentrum Dresden-RossendorfPermoserstrasse 1504318LeipzigGermany
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14
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Xu X, Robertson J, Li H. Semiconducting few-layer PdSe 2 and Pd 2Se 3: native point defects and contacts with native metallic Pd 17Se 15. Phys Chem Chem Phys 2020; 22:7365-7373. [PMID: 32211620 DOI: 10.1039/c9cp06654c] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
PdSe2 is a unique layered two-dimensional (2D) material with pentagonal structural motif and anisotropic properties. In addition, its strong interlayer interaction leads to new 2D form of the exfoliated monolayer, that is, Pd2Se3. Despite the increasing interest in these emerging 2D materials, the landscape of the native point defects, as a fundamental materials property, has not been revealed. In this work, we systematically investigate different types of defects in mono- and bi-layer PdSe2 and monolayer Pd2Se3. In contrast to the common expectation, Se vacancy is not the readily formed defect. Instead, Se-excess defects, such as SePd antisite and Se interstitial, are more likely to form over a majority of the allowed range of the atomic chemical potentials. Se-deficiency defect, Pd interstitial, is able to form under the Se-poor condition in bilayer PdSe2. The defect-mediated interlayer fusion model in the formation of monolayer Pd2Se3 from bilayer PdSe2 is reformulated. These dominant defects are found to stay in the neutral charge state, partly explaining the ambipolar behavior of the PdSe2 transistors. Finally, the stacked and lateral contacts between these few-layer semiconductors and the native Pd17Se15 metal are also studied. All these interfaces show p-type contact properties. This work reveals the important materials properties of few-layer PdSe2 and Pd2Se3 for the better development of new functional devices.
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Affiliation(s)
- Xintong Xu
- School of Aerospace Engineering, Tsinghua University, Beijing, 100084, China
| | - John Robertson
- Engineering Department, University of Cambridge, Cambridge, CB2 1PZ, UK
| | - Huanglong Li
- Department of Precision Instrument, Center for Brain Inspired Computing Research, Tsinghua University, Beijing, 100084, China.
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15
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Kempt R, Kuc A, Heine T. Zweidimensionale Edelmetallchalkogenide und ‐phosphochalkogenide. Angew Chem Int Ed Engl 2020. [DOI: 10.1002/ange.201914886] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Affiliation(s)
- Roman Kempt
- Fakultät für Chemie und LebensmittelchemieTechnische Universität Dresden Bergstrasse 66 01069 Dresden Deutschland
| | - Agnieszka Kuc
- Institut für RessourcenökologieHelmholtz-Zentrum Dresden-Rossendorf Permoserstrasse 15 04318 Leipzig Deutschland
| | - Thomas Heine
- Fakultät für Chemie und LebensmittelchemieTechnische Universität Dresden Bergstrasse 66 01069 Dresden Deutschland
- Institut für RessourcenökologieHelmholtz-Zentrum Dresden-Rossendorf Permoserstrasse 15 04318 Leipzig Deutschland
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16
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Kuklin AV, Ågren H, Avramov PV. Structural stability of single-layer PdSe 2 with pentagonal puckered morphology and its nanotubes. Phys Chem Chem Phys 2020; 22:8289-8295. [PMID: 32285892 DOI: 10.1039/d0cp00979b] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Two-dimensional (2D) materials have gained a lot of attention being a new class of materials with unique properties that could influence future technologies. Concomitant computational design and discovery of new two-dimensional materials have therefore become a significant part of modern materials research. The stability of these predicted materials has emerged as the main issue due to drawbacks of the periodic boundary condition approximation that allow one to pass common criteria of stability. Here, based on first-principle calculations, we demonstrate structural stability and instability of several recently proposed 2D materials with pentagonal morphology including the experimentally exfoliated single-layer PdSe2. It is found that an appropriate orientation of the central Pd sublattice with respect to Se2 dimers effectively compensates all mechanical stress and preserves the planar structure of the PdSe2 nanoclusters, while the flakes of all other materials having pentagonal morphology exhibit non-zero curvature induced by excessive interatomic forces. The relative energies of the PdSe2 monolayer and nanotubes per formula unit also confirm that the planar monolayer is a global energy minimum. Like the monolayer, (n,0) PdSe2 tubes are indirect band gap semiconductors with similar band gaps, while (n,n) tubes reveal indirect-direct band gap transitions following the increase of the tube diameter. Small strain energies of large diameter tubes propose their possible experimental realization for various optoelectronic applications.
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Affiliation(s)
- Artem V Kuklin
- Department of Science and Innovations, Siberian Federal University, 79 Svobodny pr., Krasnoyarsk 660041, Russia. and Division of Theoretical Chemistry and Biology, School of Engineering Sciences in Chemistry, Biotechnology and Health, KTH Royal Institute of Technology, 10691 Stockholm, Sweden
| | - Hans Ågren
- Division of Theoretical Chemistry and Biology, School of Engineering Sciences in Chemistry, Biotechnology and Health, KTH Royal Institute of Technology, 10691 Stockholm, Sweden and Federal Siberian Research Clinical Centre under FMBA of Russia, Krasnoyarsk, 660037, Russia and College of Chemistry and Chemical Engineering, Henan University, Kaifeng, Henan 475004, P. R. China
| | - Pavel V Avramov
- Department of Chemistry, College of Natural Sciences, Kyungpook National University, 80 Daehakro, Bukgu, Daegu, 41566, South Korea
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17
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Shautsova V, Sinha S, Hou L, Zhang Q, Tweedie M, Lu Y, Sheng Y, Porter BF, Bhaskaran H, Warner JH. Direct Laser Patterning and Phase Transformation of 2D PdSe 2 Films for On-Demand Device Fabrication. ACS NANO 2019; 13:14162-14171. [PMID: 31833365 DOI: 10.1021/acsnano.9b06892] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
Heterophase homojunction formation in atomically thin 2D layers is of great importance for next-generation nanoelectronics and optoelectronics applications. Technologically challenging, controllable transformation between the semiconducting and metallic phases of transition metal chalcogenides is of particular importance. Here, we demonstrate that controlled laser irradiation can be used to directly ablate PdSe2 thin films using high power or trigger the local transformation of PdSe2 into a metallic phase PdSe2-x using lower laser power. Such transformations are possible due to the low decomposition temperature of PdSe2 and a variety of stable phases compared to other 2D transition metal dichalcogenides. Scanning transmission electron microscopy is used to reveal the laser-induced Se-deficient phases of PdSe2 material. The process sensitivity to the laser power allows patterning flexibility for resist-free device fabrication. The laser-patterned devices demonstrate that a laser-induced metallic phase PdSe2-x is stable with increased conductivity by a factor of about 20 compared to PdSe2. These findings contribute to the development of nanoscale devices with homojunctions and scalable methods to achieve structural transformations in 2D materials.
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Affiliation(s)
- Viktoryia Shautsova
- Department of Materials , University of Oxford , Parks Road , Oxford OX1 3PH , United Kingdom
| | - Sapna Sinha
- Department of Materials , University of Oxford , Parks Road , Oxford OX1 3PH , United Kingdom
| | - Linlin Hou
- Department of Materials , University of Oxford , Parks Road , Oxford OX1 3PH , United Kingdom
| | - Qianyang Zhang
- Department of Materials , University of Oxford , Parks Road , Oxford OX1 3PH , United Kingdom
| | - Martin Tweedie
- Department of Materials , University of Oxford , Parks Road , Oxford OX1 3PH , United Kingdom
| | - Yang Lu
- Department of Materials , University of Oxford , Parks Road , Oxford OX1 3PH , United Kingdom
| | - Yuewen Sheng
- Department of Materials , University of Oxford , Parks Road , Oxford OX1 3PH , United Kingdom
| | - Benjamin F Porter
- Department of Materials , University of Oxford , Parks Road , Oxford OX1 3PH , United Kingdom
| | - Harish Bhaskaran
- Department of Materials , University of Oxford , Parks Road , Oxford OX1 3PH , United Kingdom
| | - Jamie H Warner
- Department of Materials , University of Oxford , Parks Road , Oxford OX1 3PH , United Kingdom
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