Memristive Behavior Enabled by Amorphous-Crystalline 2D Oxide Heterostructure

Fully Printed Negative-Capacitance Field-Effect Transistors with Ultralow Subthreshold Swing and High Inverter Signal Gain

The switching of conventional field-effect transistors (FETs) is limited by the Boltzmann barrier of thermionic emission, which prevents the realization of low-power electronics. In order to overcome this limitation, among others, unconventional device geometry with a ferroelectric/dielectric insulator stack has been proposed to demonstrate stable negative-capacitance behavior. Here, the switching of the ferroelectric layer behaves like a step-up amplifier and results in a body factor less than 1. This implies a larger change in the semiconductor surface potential compared to the applied gate voltage variation. The transistors with such ferroelectric/dielectric stack are known as negative-capacitance field-effect transistors (nc-FETs), and can demonstrate a subthreshold slope lower than the Boltzmann's limit (60 mV/decade). While nc-FETs have typically been realized with high-vacuum-deposition processes, here we show fully printed nc-FETs with amorphous indium-gallium-zinc oxide (a-IGZO) as the semiconductor material, Al2O3 as the dielectric, and poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) as the polymer ferroelectric. The printed nc-FETs demonstrate an extremely low subthreshold slope of ∼2.3 mV/decade at room temperature, which remains below the Boltzmann's limit for over 5 orders of magnitude of drain currents. Furthermore, the unipolar depletion-load-type inverters fabricated using n-type nc-FETs have demonstrated an extraordinary signal gain of 2691.

Centimeter-Scale Tellurium Oxide Films for Artificial Optoelectronic Synapses with Broadband Responsiveness and Mechanical Flexibility

Prevailing over the bottleneck of von Neumann computing has been significant attention due to the inevitableness of proceeding through enormous data volumes in current digital technologies. Inspired by the human brain's operational principle, the artificial synapse of neuromorphic computing has been explored as an emerging solution. Especially, the optoelectronic synapse is of growing interest as vision is an essential source of information in which dealing with optical stimuli is vital. Herein, flexible optoelectronic synaptic devices composed of centimeter-scale tellurium dioxide (TeO2) films detecting and exhibiting synaptic characteristics to broadband wavelengths are presented. The TeO2-based flexible devices demonstrate a comprehensive set of emulating basic optoelectronic synaptic characteristics; i.e., excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), conversion of short-term to long-term memory, and learning/forgetting. Furthermore, they feature linear and symmetric conductance synaptic weight updates at various wavelengths, which are applicable to broadband neuromorphic computations. Based on this large set of synaptic attributes, a variety of applications such as logistic functions or deep learning and image recognition as well as learning simulations are demonstrated. This work proposes a significant milestone of wafer-scale metal oxide semiconductor-based artificial synapses solely utilizing their optoelectronic features and mechanical flexibility, which is attractive toward scaled-up neuromorphic architectures.

GeTe/MoTe2 Van der Waals Heterostructures: Enabling Ultralow Voltage Memristors for Nonvolatile Memory and Neuromorphic Computing Applications

Advanced electronic semiconducting Van der Waals heterostructures (HSs) are promising candidates for exploring next-generation nanoelectronics owing to their exceptional electronic properties, which present the possibility of extending their functionalities to diverse potential applications. In this study, GeTe/MoTe2 HS are explored for nonvolatile memory and neuromorphic-computing applications. Sputter-deposited Ag/GeTe/MoTe2/Pt HS cross-point devices are fabricated, and they demonstrate memristor behavior at ultralow switching voltages (VSET: 0.15 V and VRESET: -0.14 V) with very low energy consumption (≈30 nJ), high memory window, long retention time (104 s), and excellent endurance (105 cycles). Resistive switching is achieved by adjusting the interface between the Ag top electrode and the heterojunction switching layer. Cross-sectional transmission electron microscope images and conductive atomic force microscopy analysis confirm the presence of a conducting filament in the heterojunction switching layer. Further, emulating various synaptic functions of a biological synapse reveals that GeTe/MoTe2 HS can be utilized for energy-efficient neuromorphic-computing applications. A multilayer perceptron is implemented using the synaptic weights of the Ag/GeTe/MoTe2/Pt HS device, revealing high pattern accuracy (81.3%). These results indicate that HS devices can be considered a potential solution for high-density memory and artificial intelligence applications.

High-Density, Nonvolatile, Flexible Multilevel Organic Memristor Using Multilayered Polymer Semiconductors

Nonvolatile organic memristors have emerged as promising candidates for next-generation electronics, emphasizing the need for vertical device fabrication to attain a high density. Herein, we present a comprehensive investigation of high-performance organic memristors, fabricated in crossbar architecture with PTB7/Al-AlOx-nanocluster/PTB7 embedded between Al electrodes. PTB7 films were fabricated using the Unidirectional Floating Film Transfer Method, enabling independent uniform film fabrication in the Layer-by-Layer (LbL) configuration without disturbing underlying films. We examined the charge transport mechanism of our memristors using the Hubbard model highlighting the role of Al-AlOx-nanoclusters in switching-on the devices, due to the accumulation of bipolarons in the semiconducting layer. By varying the number of LbL films in the device architecture, the resistance of resistive states was systematically altered, enabling the fabrication of novel multilevel memristors. These multilevel devices exhibited excellent performance metrics, including enhanced memory density, high on-off ratio (>108), remarkable memory retention (>105 s), high endurance (87 on-off cycles), and rapid switching (∼100 ns). Furthermore, flexible memristors were fabricated, demonstrating consistent performance even under bending conditions, with a radius of 2.78 mm for >104 bending cycles. This study not only demonstrates the fundamental understanding of charge transport in organic memristors but also introduces novel device architectures with significant implications for high-density flexible applications.

The synthesis and application of crystalline-amorphous hybrid materials

Crystalline-amorphous hybrid materials (CA-HMs) possess the merits of both pure crystalline and amorphous phases. Abundant dangling bonds, unsaturated coordination atoms, and isotropic structural features in the amorphous phase, as well as relatively high electronic conductivity and thermodynamic structural stability of the crystalline phase simultaneously take effect in CA-HMs. Furthermore, the atomic and bandgap mismatch at the CA-HM interface can introduce more defects as extra active sites, reservoirs for promoted catalytic and electrochemical performance, and induce built-in electric field for facile charge carrier transport. Motivated by these intriguing features, herein, we provide a comprehensive overview of CA-HMs on various aspects-from synthetic methods to multiple applications. Typical characteristics of CA-HMs are discussed at the beginning, followed by representative synthetic strategies of CA-HMs, including hydrothermal/solvothermal methods, deposition techniques, thermal adjustment, and templating methods. Diverse applications of CA-HMs, such as electrocatalysis, batteries, supercapacitors, mechanics, optoelectronics, and thermoelectrics along with underlying structure-property mechanisms are carefully elucidated. Finally, challenges and perspectives of CA-HMs are proposed with an aim to provide insights into the future development of CA-HMs.

Flexible multilevel nonvolatile biocompatible memristor with high durability

Current protein or glucose based biomemristors have low resistance-switching performance and require complex structural designs, significantly hindering the development of implantable memristor devices. It is imperative to discover novel candidate materials for biomemristor with high durability and excellent biosafety for implantable health monitoring. Herein, we initially demonstrate the resistance switching characteristics of a nonvolatile memristor in a configuration of Pt/AlOOH/ITO consisting of biocompatible AlOOH nanosheets sandwiched between a Indium Tin Oxides (ITO) electrode and a platinum (Pt) counter-electrode. The hydrothermally synthesized AlOOH nanosheets have excellent biocompatibility as confirmed through the Cell Counting Kit-8 (CCK-8) tests. Four discrete resistance levels are achieved in this assembled device in responsible to different compliance currents (ICC) for the set process, where the emerging multilevel states show high durability over 103 cycles, outperforming the protein-based biomemristors under similar conditions. The excellent performance of the Pt/AlOOH/ITO memristor is attributed to the significant role of hydrogen proton with pipe effect, as confirmed by both experimental results and density functional theory (DFT) analyses. The present results indicate the nonvolatile memristors with great potential as the next generation implantable multilevel resistive memories for long-term human health monitoring.

Tuning 2D Magnetism in Cobalt Monoxide Nanosheets Via In Situ Nickel-Doping

Element doping has become an effective strategy to engineer the magnetic properties of two-dimensional (2D) materials and is widely explored in van der Waals layered transition metal dichalcogenides. However, the high-concentration substitution doping of 2D nonlayered metal oxides, which can preserve the original crystal texture and guarantee the homogeneity of doping distribution, is still a critical challenge due to the isotropic bonding of closed-packed structures. In this work, the synthesis of high-quality 2D nonlayered nickel-doped cobalt monoxide nanosheets via in situ atmospheric pressure chemical vapor deposition method is reported. High-resolution transmission electron microscopy confirmed that nickel atoms are doped at the intrinsic cobalt atom sites. The nickel doping concentration is stable at ≈15%, superior to most magnetic dopants doping in 2D materials and metal oxides. Magnetic measurements showed that pristine cobalt monoxide is nonferromagnetic, whereas nickel-doped cobalt monoxide exhibits robust ferromagnetic behavior with a Curie temperature of ≈180 K. Density functional theory calculations reveal that nickel atoms can improve the internal ferromagnetic correlation, giving rise to significant ferromagnetic performance of cobalt monoxide nanosheets. These results provide a valuable case for tuning the competing correlated states and magnetic ordering by substitution doping in 2D nonlayered oxide semiconductors.

Emerging 2D Metal Oxides: From Synthesis to Device Integration

2D metal oxides have aroused increasing attention in the field of electronics and optoelectronics due to their intriguing physical properties. In this review, an overview of recent advances on synthesis of 2D metal oxides and their electronic applications is presented. First, the tunable physical properties of 2D metal oxides that relate to the structure (various oxidation-state forms, polymorphism, etc.), crystallinity and defects (anisotropy, point defects, and grain boundary), and thickness (quantum confinement effect, interfacial effect, etc.) are discussed. Then, advanced synthesis methods for 2D metal oxides besides mechanical exfoliation are introduced and classified into solution process, vapor-phase deposition, and native oxidation on a metal source. Later, the various roles of 2D metal oxides in widespread applications, i.e., transistors, inverters, photodetectors, piezotronics, memristors, and potential applications (solar cell, spintronics, and superconducting devices) are discussed. Finally, an outlook of existing challenges and future opportunities in 2D metal oxides is proposed.

Research Advances in Amorphous-Crystalline Heterostructures Toward Efficient Electrochemical Applications

Interface engineering of heterostructures has proven a promising strategy to effectively modulate their physicochemical properties and further improve the electrochemical performance for various applications. In this context related research of the newly proposed amorphous-crystalline heterostructures have lately surged since they combine the superior advantages of amorphous- and crystalline-phase structures, showing unusual atomic arrangements in heterointerfaces. Nonetheless, there has been much less efforts in systematic analysis and summary of the amorphous-crystalline heterostructures to examine their complicated interfacial interactions and elusory active sites. The critical structure-activity correlation and electrocatalytic mechanism remain rather elusive. In this review, the recent advances of amorphous-crystalline heterostructures in electrochemical energy conversion and storage fields are amply discussed and presented, along with remarks on the challenges and perspectives. Initially, the fundamental characteristics of amorphous-crystalline heterostructures are introduced to provide scientific viewpoints for structural understanding. Subsequently, the superiorities and current achievements of amorphous-crystalline heterostructures as highly efficient electrocatalysts/electrodes for hydrogen evolution reaction, oxygen evolution reaction, supercapacitor, lithium-ion battery, and lithium-sulfur battery applications are elaborated. At the end of this review, future outlooks and opportunities on amorphous-crystalline heterostructures are also put forward to promote their further development and application in the field of clean energy.

Wafer-scale solution-processed 2D material analog resistive memory array for memory-based computing

Realization of high-density and reliable resistive random access memories based on two-dimensional semiconductors is crucial toward their development in next-generation information storage and neuromorphic computing. Here, wafer-scale integration of solution-processed two-dimensional MoS2 memristor arrays are reported. The MoS2 memristors achieve excellent endurance, long memory retention, low device variations, and high analog on/off ratio with linear conductance update characteristics. The two-dimensional nanosheets appear to enable a unique way to modulate switching characteristics through the inter-flake sulfur vacancies diffusion, which can be controlled by the flake size distribution. Furthermore, the MNIST handwritten digits recognition shows that the MoS2 memristors can operate with a high accuracy of >98.02%, which demonstrates its feasibility for future analog memory applications. Finally, a monolithic three-dimensional memory cube has been demonstrated by stacking the two-dimensional MoS2 layers, paving the way for the implementation of two memristor into high-density neuromorphic computing system.

Nucleation Kinetics and Structure Evolution of Quasi-Two-Dimensional ZnO at the Air-Water Interface: An In Situ Time-Resolved Grazing Incidence X-ray Scattering Study

The design and synthesis of high-quality two-dimensional (2D) materials with desired morphology are essential for property control. One critical challenge that impedes the understanding and control of 2D crystal nucleation and growth is the inability of direct observation of the nanocrystal evolution process with high enough time resolution. Here, we demonstrated an in situ X-ray scattering approach that directly reveals 2D wurtzite ZnO nanosheet growth at the air-water interface. The time-resolved grazing incidence X-ray diffraction (GID) and grazing incidence X-ray off-specular scattering (GIXOS) results uncovered a lateral to vertical growth kinetics switch phenomenon in the ZnO nanosheet growth. This switch represents the 2D to three-dimensional (3D) crystal structure evolution, which governs the size and thickness of nanosheets, respectively. This phenomenon can guide 2D nanocrystal synthesis with rationally controlled size and thickness. Our work opens a new pathway toward the understanding of 2D nanomaterial growth kinetics based on time-resolved liquid surface grazing incidence X-ray techniques.

Heterostructuring Mesoporous 2D Iridium Nanosheets with Amorphous Nickel Boron Oxide Layers to Improve Electrolytic Water Splitting

2D heterostructures exhibit a considerable potential in electrolytic water splitting due to their high specific surface areas, tunable electronic properties, and diverse hybrid compositions. However, the fabrication of well-defined 2D mesoporous amorphous-crystalline heterostructures with highly active heterointerfaces remains challenging. Herein, an efficient 2D heterostructure consisting of amorphous nickel boron oxide (Ni-B_i ) and crystalline mesoporous iridium (meso-Ir) is designed for water splitting, referred to as Ni-B_i /meso-Ir. Benefiting from well-defined 2D heterostructures and strong interfacial coupling, the resulting mesoporous dual-phase Ni-B_i /meso-Ir possesses abundant catalytically active heterointerfaces and boosts the exposure of active sites, compared to their crystalline and amorphous mono-counterparts. The electronic state of the iridium sites is tuned favorably by hybridizing with Ni-B_i layers. Consequently, the Ni-B_i /meso-Ir heterostructures show superior and stable electrochemical performance toward both oxygen evolution reaction (OER) and hydrogen evolution reaction (HER) in an alkaline electrolyte.

Hybrid oxide brain-inspired neuromorphic devices for hardware implementation of artificial intelligence

The state-of-the-art artificial intelligence technologies mainly rely on deep learning algorithms based on conventional computers with classical von Neumann computing architectures, where the memory and processing units are separated resulting in an enormous amount of energy and time consumed in the data transfer process. Inspired by the human brain acting like an ultra-highly efficient biological computer, neuromorphic computing is proposed as a technology for hardware implementation of artificial intelligence. Artificial synapses are the main component of a neuromorphic computing architecture. Memristors are considered to be a relatively ideal candidate for artificial synapse applications due to their high scalability and low power consumption. Oxides are most widely used in memristors due to the ease of fabrication and high compatibility with complementary metal-oxide-semiconductor processes. However, oxide memristors suffer from unsatisfactory stability and reliability. Oxide-based hybrid structures can effectively improve the device stability and reliability, therefore providing a promising prospect for the application of oxide memristors to neuromorphic computing. This work reviews the recent advances in the development of hybrid oxide memristive synapses. The discussion is organized according to the blending schemes as well as the working mechanisms of hybrid oxide memristors.

Interface chemistry of two-dimensional heterostructures - fundamentals to applications

Two-dimensional heterostructures (2D HSs) have emerged as a new class of materials where dissimilar 2D materials are combined to synergise their advantages and alleviate shortcomings. Such a combination of dissimilar components into 2D HSs offers fascinating properties and intriguing functionalities attributed to the newly formed heterointerface of constituent components. Understanding the nature of the surface and the complex heterointerface of HSs at the atomic level is crucial for realising the desired properties, designing innovative 2D HSs, and ultimately unlocking their full potential for practical applications. Therefore, this review provides the recent progress in the field of 2D HSs with a focus on the discussion of the fundamentals and the chemistry of heterointerfaces based on van der Waals (vdW) and covalent interactions. It also explains the challenges associated with the scalable synthesis and introduces possible methodologies to produce large quantities with good control over the heterointerface. Subsequently, it highlights the specialised characterisation techniques to reveal the heterointerface formation, chemistry and nature. Afterwards, we give an overview of the role of 2D HSs in various emerging applications, particularly in high-power batteries, bifunctional catalysts, electronics, and sensors. In the end, we present conclusions with the possible solutions to the associated challenges with the heterointerfaces and potential opportunities that can be adopted for innovative applications.

Electrical Conduction Characteristic of a 2D MXene Device with Cu/Cr2C/TiN Structure Based on Density Functional Theory

The electronic structure and the corresponding electrical conductive behavior of the Cu/Cr₂C/TiN stack were assessed according to a newly developed first-principle model based on density functional theory. Using an additional Cr₂C layer provides the metal-like characteristic of the Cu/Cr₂C/TiN stack with much larger electrical conduction coefficients (i.e., mobility, diffusivity, and electrical conductivity) than the conventional Ag/Ti₃C₂/Pt stack due to the lower activation energy. This device is therefore capable of offering faster switching speeds, lower programming voltage, and better stability and durability than the memristor device with conventional Ti₃C₂ MXene.