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Kundale SS, Kamble GU, Patil PP, Patil SL, Rokade KA, Khot AC, Nirmal KA, Kamat RK, Kim KH, An HM, Dongale TD, Kim TG. Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications. Nanomaterials (Basel) 2023; 13:1879. [PMID: 37368309 DOI: 10.3390/nano13121879] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/03/2023] [Revised: 06/09/2023] [Accepted: 06/13/2023] [Indexed: 06/28/2023]
Abstract
Resistive-switching-based memory devices meet most of the requirements for use in next-generation information and communication technology applications, including standalone memory devices, neuromorphic hardware, and embedded sensing devices with on-chip storage, due to their low cost, excellent memory retention, compatibility with 3D integration, in-memory computing capabilities, and ease of fabrication. Electrochemical synthesis is the most widespread technique for the fabrication of state-of-the-art memory devices. The present review article summarizes the electrochemical approaches that have been proposed for the fabrication of switching, memristor, and memristive devices for memory storage, neuromorphic computing, and sensing applications, highlighting their various advantages and performance metrics. We also present the challenges and future research directions for this field in the concluding section.
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Affiliation(s)
- Somnath S Kundale
- Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India
| | - Girish U Kamble
- Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India
| | - Pradnya P Patil
- Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India
| | - Snehal L Patil
- Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India
| | - Kasturi A Rokade
- Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India
| | - Atul C Khot
- School of Electrical Engineering, Korea University, Anam-dong, Seoul 02841, Republic of Korea
| | - Kiran A Nirmal
- School of Electrical Engineering, Korea University, Anam-dong, Seoul 02841, Republic of Korea
| | - Rajanish K Kamat
- Department of Electronics, Shivaji University, Kolhapur 416004, India
- Department of Physics, Dr. Homi Bhabha State University, 15, Madam Cama Road, Mumbai 400032, India
| | - Kyeong Heon Kim
- Department of Convergence Electronic Engineering, Gyeongsang National University, Jinjudae-ro 501, Jinju 52828, Republic of Korea
| | - Ho-Myoung An
- Department of Electronics, Osan University, 45, Cheonghak-ro, Osan-si 18119, Republic of Korea
| | - Tukaram D Dongale
- Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India
- School of Electrical Engineering, Korea University, Anam-dong, Seoul 02841, Republic of Korea
| | - Tae Geun Kim
- School of Electrical Engineering, Korea University, Anam-dong, Seoul 02841, Republic of Korea
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Nirmal KA, Ren W, Khot AC, Kang DY, Dongale TD, Kim TG. Flexible Memristive Organic Solar Cell Using Multilayer 2D Titanium Carbide MXene Electrodes. Adv Sci (Weinh) 2023:e2300433. [PMID: 37132557 DOI: 10.1002/advs.202300433] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Subscribe] [Scholar Register] [Received: 01/19/2023] [Revised: 04/09/2023] [Indexed: 05/04/2023]
Abstract
Hybrid systems have attracted significant attention within the scientific community due to their multifunctionality, which has resulted in increasing demands for wearable electronics, green energy, and miniaturization. Furthermore, MXenes are promising two-dimensional materials that have been applied in various areas due to their unique properties. Herein, a flexible, transparent, and conductive electrode (FTCE) based on a multilayer hybrid MXene/Ag/MXene structure that can be applied to realize an inverted organic solar cell (OSC) with memory and learning functionalities is reported. This optimized FTCE exhibits high transmittance (84%), low sheet resistance (9.7 Ω sq-1 ), and reliable operation (even after 2000 bending cycles). Moreover, the OSC using this FTCE achieves a power conversion efficiency of 13.86% and sustained photovoltaic performance, even after hundreds of switching cycles. The fabricated memristive OSC (MemOSC) device also exhibits reliable resistive switching behavior at low operating voltages of 0.60 and -0.33 V (similar to biological synapses), an excellent ON/OFF ratio (103 ), stable endurance performance (4 × 103 ), and memory retention properties (104 s). Moreover, the MemOSC device can mimic synaptic functionalities on a biological time scale. Thus, MXene can potentially be used as an electrode for highly efficient OSCs with memristive functions for future intelligent solar cell modules.
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Affiliation(s)
- Kiran A Nirmal
- School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul, 02841, South Korea
| | - Wanqi Ren
- School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul, 02841, South Korea
| | - Atul C Khot
- School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul, 02841, South Korea
| | - Dae Yun Kang
- School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul, 02841, South Korea
| | - Tukaram D Dongale
- Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur, 416004, India
| | - Tae Geun Kim
- School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul, 02841, South Korea
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Nirmal KA, Nhivekar GS, Khot AC, Dongale TD, Kim TG. Unraveling the Effect of the Water Content in the Electrolyte on the Resistive Switching Properties of Self-Assembled One-Dimensional Anodized TiO 2 Nanotubes. J Phys Chem Lett 2022; 13:7870-7880. [PMID: 35979996 DOI: 10.1021/acs.jpclett.2c01075] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The applied potential, time, and water content are crucial factors in the electrochemical anodization process because the growth of one-dimensional nanotubes can be accelerated by enhancing the corrosive effect. We investigated the effect of the water content on the resistive switching (RS) properties of Ti foils by anodizing the foils and varying the water content in an electrolyte (1-10 vol %). By increasing the water content, we facilitated a slow transition from nanopores to nanotubes and realized an increase in the tube wall diameter and tube length. All of the fabricated memristive devices exhibited a reliable and reproducible bipolar resistive switching effect. The optimized device exhibited bipolar RS properties with good dc endurance (104 cycles) and data retention capability (105 s). Our results suggest that as the water content increases to 5 vol %, the RS process improves; further increases in the water content impair the RS process.
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Affiliation(s)
- Kiran A Nirmal
- School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Ganesh S Nhivekar
- Department of Electronics, Yashavantrao Chavan Institute of Science, Satara 415 001, India
| | - Atul C Khot
- School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Tukaram D Dongale
- Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416 004, India
| | - Tae Geun Kim
- School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul 02841, Republic of Korea
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Khot AC, Dongale TD, Nirmal KA, Sung JH, Lee HJ, Nikam RD, Kim TG. Amorphous Boron Nitride Memristive Device for High-Density Memory and Neuromorphic Computing Applications. ACS Appl Mater Interfaces 2022; 14:10546-10557. [PMID: 35179364 DOI: 10.1021/acsami.1c23268] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Although two-dimensional (2D) nanomaterials are promising candidates for use in memory and synaptic devices owing to their unique physical, chemical, and electrical properties, the process compatibility, synthetic reliability, and cost-effectiveness of 2D materials must be enhanced. In this context, amorphous boron nitride (a-BN) has emerged as a potential material for future 2D nanoelectronics. Therefore, we explored the use of a-BN for multilevel resistive switching (MRS) and synaptic learning applications by fabricating a complementary metal-oxide-semiconductor (CMOS)-compatible Ag/a-BN/Pt memory device. The redox-active Ag and boron vacancies enhance the mixed electrochemical metallization and valence change conduction mechanism. The synthesized a-BN switching layer was characterized using several analyses. The fabricated memory devices exhibited bipolar resistive switching with low set and reset voltages (+0.8 and -2 V, respectively) and a small operating voltage distribution. In addition, the switching voltages of the device were modeled using a time-series analysis, for which the Holt's exponential smoothing technique provided good modeling and prediction results. According to the analytical calculations, the fabricated Ag/a-BN/Pt device was found to be memristive, and its MRS ability was investigated by varying the compliance current. The multilevel states demonstrated a uniform resistance distribution with a high endurance of up to 104 direct current (DC) cycles and memory retention characteristics of over 106 s. Conductive atomic force microscopy was performed to clarify the resistive switching mechanism of the device, and the likely mixed electrochemical metallization and valence change mechanisms involved therein were discussed based on experimental results. The Ag/a-BN/Pt memristive devices mimicked potentiation/depression and spike-timing-dependent plasticity-based Hebbian-learning rules with a high pattern accuracy (90.8%) when implemented in neural network simulations.
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Affiliation(s)
- Atul C Khot
- School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Tukaram D Dongale
- School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India
| | - Kiran A Nirmal
- School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Ji Hoon Sung
- School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Ho Jin Lee
- School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Revannath D Nikam
- Department of Material Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea
| | - Tae Geun Kim
- School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul 02841, Republic of Korea
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