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Li WH, An HM, Yang GH, Dai CY. [Solitary pulmonary capillary hemangioma: a clinicopathological analysis of 5 cases]. Zhonghua Bing Li Xue Za Zhi 2024; 53:174-176. [PMID: 38281786 DOI: 10.3760/cma.j.cn112151-20230815-00070] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [MESH Headings] [Subscribe] [Scholar Register] [Indexed: 01/30/2024]
Affiliation(s)
- W H Li
- Department of Pathology, the Fourth Affiliated Hospital, Zhejiang University School of Medicine, Yiwu 322000, China
| | - H M An
- Department of Pathology, Sir Run Run Shaw Hospital, Zhejiang University School of Medicine, Hangzhou 310000, China
| | - G H Yang
- Department of Pathology, the Fourth Affiliated Hospital, Zhejiang University School of Medicine, Yiwu 322000, China
| | - C Y Dai
- Department of Pathology, the Fourth Affiliated Hospital, Zhejiang University School of Medicine, Yiwu 322000, China
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Kundale SS, Kamble GU, Patil PP, Patil SL, Rokade KA, Khot AC, Nirmal KA, Kamat RK, Kim KH, An HM, Dongale TD, Kim TG. Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications. Nanomaterials (Basel) 2023; 13:1879. [PMID: 37368309 DOI: 10.3390/nano13121879] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/03/2023] [Revised: 06/09/2023] [Accepted: 06/13/2023] [Indexed: 06/28/2023]
Abstract
Resistive-switching-based memory devices meet most of the requirements for use in next-generation information and communication technology applications, including standalone memory devices, neuromorphic hardware, and embedded sensing devices with on-chip storage, due to their low cost, excellent memory retention, compatibility with 3D integration, in-memory computing capabilities, and ease of fabrication. Electrochemical synthesis is the most widespread technique for the fabrication of state-of-the-art memory devices. The present review article summarizes the electrochemical approaches that have been proposed for the fabrication of switching, memristor, and memristive devices for memory storage, neuromorphic computing, and sensing applications, highlighting their various advantages and performance metrics. We also present the challenges and future research directions for this field in the concluding section.
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Affiliation(s)
- Somnath S Kundale
- Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India
| | - Girish U Kamble
- Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India
| | - Pradnya P Patil
- Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India
| | - Snehal L Patil
- Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India
| | - Kasturi A Rokade
- Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India
| | - Atul C Khot
- School of Electrical Engineering, Korea University, Anam-dong, Seoul 02841, Republic of Korea
| | - Kiran A Nirmal
- School of Electrical Engineering, Korea University, Anam-dong, Seoul 02841, Republic of Korea
| | - Rajanish K Kamat
- Department of Electronics, Shivaji University, Kolhapur 416004, India
- Department of Physics, Dr. Homi Bhabha State University, 15, Madam Cama Road, Mumbai 400032, India
| | - Kyeong Heon Kim
- Department of Convergence Electronic Engineering, Gyeongsang National University, Jinjudae-ro 501, Jinju 52828, Republic of Korea
| | - Ho-Myoung An
- Department of Electronics, Osan University, 45, Cheonghak-ro, Osan-si 18119, Republic of Korea
| | - Tukaram D Dongale
- Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India
- School of Electrical Engineering, Korea University, Anam-dong, Seoul 02841, Republic of Korea
| | - Tae Geun Kim
- School of Electrical Engineering, Korea University, Anam-dong, Seoul 02841, Republic of Korea
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An HM, Yeo SH, Chung HJ, Cho HS, Bae SJ, Kim JY, Kang DR, Lee MY, Lee JY. Visit-to-visit changes in fasting blood sugar and the risk for cardiovascular disease and mortality in the Korean population: a nationwide population-based cohort study. Eur Rev Med Pharmacol Sci 2021; 25:263-272. [PMID: 33506915 DOI: 10.26355/eurrev_202101_24392] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Abstract
OBJECTIVE The importance of continuous monitoring of fasting blood sugar (FBS) levels of diabetic patients has been established. MATERIALS AND METHODS An observational prospective study was conducted. Our analysis included 1,700,796 individuals from the nationwide South Korean National Health Insurance System cohort. FBS variability was measured by standard deviation (SD). RESULTS Kaplan-Meier curves demonstrated elevated disease probability in the higher FBS fluctuation group compared with the lower FBS fluctuation group. After adjusting for confounding variables, Cox proportional hazards analysis showed that the hazard ratios of 411 individuals in the highest quartile of SD variation of FBS were 1.77 (95% confidence interval 1.37-2.28, p<0.001) compared with the lowest quartile of SD variation of FBS. The impact of FBS fluctuation on the risk of cardiovascular diseases (CVDs), cerebrovascular diseases, CVD mortality and all-cause mortality in the highest quartiles of diabetic and non-diabetic individuals was statistically significant. CONCLUSIONS Visit-to-visit FBS variability has prognostic value for predicting micro- and macrovascular disease, cardiovascular mortality, and all-cause mortality.
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Affiliation(s)
- H M An
- Yonsei University Wonju College of Medicine, Wonju, South Korea.
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Kim KH, An HM, Kim HD, Kim TG. Transparent conductive oxide films mixed with gallium oxide nanoparticle/single-walled carbon nanotube layer for deep ultraviolet light-emitting diodes. Nanoscale Res Lett 2013; 8:507. [PMID: 24295342 PMCID: PMC3879035 DOI: 10.1186/1556-276x-8-507] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/24/2013] [Accepted: 11/18/2013] [Indexed: 06/02/2023]
Abstract
We propose a transparent conductive oxide electrode scheme of gallium oxide nanoparticle mixed with a single-walled carbon nanotube (Ga2O3 NP/SWNT) layer for deep ultraviolet light-emitting diodes using spin and dipping methods. We investigated the electrical, optical and morphological properties of the Ga2O3 NP/SWNT layers by increasing the thickness of SWNTs via multiple dipping processes. Compared with the undoped Ga2O3 films (current level 9.9 × 10-9 A @ 1 V, transmittance 68% @ 280 nm), the current level flowing in the Ga2O3 NP/SWNT increased by approximately 4 × 105 times and the transmittance improved by 9% after 15 times dip-coating (current level 4 × 10-4 A at 1 V; transmittance 77.0% at 280 nm). These improvements result from both native high transparency of Ga2O3 NPs and high conductivity and effective current spreading of SWNTs.
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Affiliation(s)
- Kyoeng Heon Kim
- School of Electrical Engineering, Korea University, Seoul 136-713, Korea
| | - Ho-Myoung An
- Department of Digital Electronics, Osan College, Osan-si 447-749, Korea
| | - Hee-Dong Kim
- School of Electrical Engineering, Korea University, Seoul 136-713, Korea
| | - Tae Geun Kim
- School of Electrical Engineering, Korea University, Seoul 136-713, Korea
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Song MY, Seo Y, Park S, Lee JH, An HM, Kim TG. Observation of highly reproducible resistive-switching behavior from solution-based ZnO nanorods. J Nanosci Nanotechnol 2013; 13:6212-6215. [PMID: 24205631 DOI: 10.1166/jnn.2013.7701] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
The authors report upon highly reproducible, unipolar resistive-switching random access memory with narrow voltage distributions using Au/ZnO nanorods/Au structures. The ZnO nanorods resistive switching layer was prepared by a simple spin-coating process on a sol-gel seed layer, and from its size confinement effect, this device showed narrow set/reset voltage distributions and low voltage operations compared with Au/ZnO thin film/Au structures. With this electrical uniformity, the device exhibited good reliabilities such as long retention (> 70000 sec) and high endurance (> 5000 cycles).
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Affiliation(s)
- Min Yeong Song
- Department of Electrical Engineering, Korea University, Seoul 136-713, Korea
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An HM, Kim HD, Kim B, Kim TG. A four-bit-per-cell program method with substrate-bias assisted hot electron injection for charge trap flash memory devices. J Nanosci Nanotechnol 2013; 13:3293-3297. [PMID: 23858846 DOI: 10.1166/jnn.2013.7242] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
We propose a four-bit-per-cell program method using a two-step sequence with substrate-bias assisted hot electron (SAHE) injection into the charge trap flash memory devices in order to overcome the limitations of conventional four-bit program methods, which use channel hot electron (CHE) injection. With this proposed method, a localized charge injection near the junction edge with an acceptable read margin was clearly observed, along with a threshold voltage difference of 1 V between the forward and the reverse read. In addition, a multi-level storage was easily obtained using a drain voltage step of 1 V at each level of the three programmed states, along with a fast program time of 1 micros. Finally, by using charge pumping methods, we directly observed the detailed information on the spatial distribution of the local threshold voltage in each level of the four states, for each physical bit, as a function of the program voltage.
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Affiliation(s)
- Ho-Myoung An
- School of Electrical Engineering, Korea University, Anam-dong 5-ga, Seoul 136-701, Korea
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An HM, Yang JW, Sim JI, Yoon HD, Kim TG. Improved light extraction from large-area vertical light-emitting diodes with deep hole-patterns using nanosphere lithography. J Nanosci Nanotechnol 2011; 11:10339-10343. [PMID: 22408907 DOI: 10.1166/jnn.2011.5018] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
The authors report on an improved light extraction method from large-area vertical light emitting diodes (VLEDs) with deep hole-patterns fabricated using nanosphere lithography. In order to produce the ordered deep-hole patterns on the n-type GaN surface, a 150 nm thick Ni dot mask formed via a lift-off process of the Ni coated onto a 500 nm diameter polystylene bead array was employed to enable deep etching. Three VLEDs-one as a reference with no patterns, and two with periodic 360 nm diameter hole patterns, one with 1.0 microm and the other with 1.5 microm depths on the n-type GaN surface, were prepared for comparison. The light output power measured for the VLEDs with the hole-patterns increased by 4.13 and 4.86 times, respectively, as compared to the reference VLED. These enhancements are attributed to the multiple scatterings of the light from the sidewall of the hole-patterns and to the increased surface area to which the light can approach. The higher light output power obtained for the VLEDs with the deep hole patterns might be due to a photon reabsorption reduction within the n-GaN layer.
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Affiliation(s)
- Ho-Myoung An
- School of Electrical Engineering, Korea University, Anam-dong 5-ga, Seongbuk-gu, Seoul 136-701, Korea
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An HM, Kim HD, Seo YJ, Kim KC, Sung YM, Koo SM, Koh JH, Kim TG. Improved electrical and reliability characteristics in metal/oxide/nitride/oxide/silicon capacitors with blocking oxide layers formed under the radical oxidation process. J Nanosci Nanotechnol 2010; 10:4701-4705. [PMID: 21128482 DOI: 10.1166/jnn.2010.1697] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2023]
Abstract
We propose a Metal-Oxide-Nitride-Oxide-Silicon (MONOS) structure whose blocking oxide is formed by radical oxidation on the silicon nitride (Si3N4) layer to improve the electrical and reliability characteristics. We directly compare the electrical and reliability properties of the MONOS capacitors with two different blocking oxide (SiO2) layers, which are called a "radical oxide" grown by the radical oxidation and a "CVD oxide" deposited by chemical vapor deposition (CVD) respectively. The MONOS capacitor with a radical oxide shows a larger C-V memory window of 3.6 V at sweep voltages from 9 V to -9 V, faster program/erase speeds of 1 micros/1 ms at bias voltages of -6 V and 8 V, a lower leakage current of 7 pA and a longer data retention, compared to those of the MONOS capacitor with a CVD oxide. These improvements have been attributed to both high densification of blocking oxide film and increased nitride-related memory traps at the interface between the blocking oxide and Si3N4 layer by radical oxidation.
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Affiliation(s)
- Ho-Myoung An
- School of Electrical Engineering, Korea University Seoul 136-713, Korea
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Xu LR, An HM. [The normal Corti's organ of the guinea-pig, cat and human: a scanning electron microscopic observation]. Sichuan Yi Xue Yuan Xue Bao 1985; 16:262-6. [PMID: 3837382] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [MESH Headings] [Subscribe] [Scholar Register] [Indexed: 01/07/2023]
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