Ultrabroadband Photodetectors up to 10.6 µm Based on 2D Fe3 O4 Nanosheets

Cu Intercalation-Stabilized 1T' MoS2 with Electrical Insulating Behavior

The intercalated two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted much attention for their designable structures and novel properties. Among this family, host materials with low symmetry such as 1T' phase TMDCs are particularly interesting because of their potentials in inducing unconventional phenomena. However, such systems typically have low quality and poor stability, hindering further study of the structure-property relationship and applications. In this work, we intercalated Cu into 1T' MoS2 with high crystallinity and high thermal stability up to ∼300 °C. We identified the distribution and arrangement of Cu intercalators for the first time, and the results show that Cu intercalators occupy partially the tetrahedral interstices aligned with Mo sites. The obtained Cu-1T' MoS2 exhibits an insulating hopping transport behavior with a large temperature coefficient of resistance reaching -4∼-2%·K-1. This work broadens the artificial intercalated structure library and promotes the structure design and property modulation of layered materials.

WS2/MHS PdTe2/Si Mixed-Dimensional Heterojunction as Ultra-Broadband Photodetector for Health and Safety Monitoring

Ultra-broadband photodetectors (UB-PDs) are essential in medical applications, public safety monitoring, and various other fields. However, developing UB-PDs covering multiple bands from ultraviolet to medium infrared remains a challenge due to material limitations. Here, a mixed-dimensional heterojunction composed of 2D WS2/monodisperse hexagonal stacking (MHS) 3D PdTe2 particles on 3D Si is proposed, capable of detecting light from 365 to 9600 nm. The exceptional performance of this photodetector is attributed to MHS PdTe₂ particles, which increase the specific surface area and enhance UV-to-NIR absorption of the 2D WS₂ nanofilm. At 980 nm (0 V), the device achieves a responsivity of 7.8 × 102 mA W-1, a detectivity of 2.5 × 1013 Jones, and a sensitivity of 2.6 × 108 cm2 W-1. The MHS PdTe₂ layer amplifies the built-in electric field and enhances heterojunction self-powered capability. This photodetector exhibits a high switching ratio (104), a rapid response time (24.14 µs), and a significant photocurrent gain at zero bias. Its application in blood oxygen saturation analysis is demonstrated based on dual-wavelength photoplethysmography (PPG) at 650 and 905 nm, and infrared perspective imaging at 808 nm. Additionally, the device can differentiate materials based on their transmittance at 9600 nm. This research opens new avenues for the multifunctional use of UB-PDs.

Kinetically Tailored Chemical Vapor Deposition Approach for Synthesizing High-Quality Large-Area Non-Layered 2D Materials

Non-layered 2D materials offer unique and more advantageous physicochemical properties than those of conventional 2D layered materials. However, the isotropic chemical bonding nature of non-layered materials hinders their lateral growth, making the synthesis of large-area continuous thin films challenging. Herein, a facile kinetically tailored chemical vapor deposition (KT-CVD) approach is introduced for the synthesis of 2D molybdenum nitride (MoN), a representative non-layered material. Large-scale thin films of MoN with lateral dimensions of up to 1.5 cm × 1.5 cm are obtained by modulating the vapor pressure of nitrogen feedstock and disrupting the thermodynamically favored growth kinetics of non-layered materials. The growth of stable crystalline phases of MoN (δ-MoN and γ-Mo2N) is also realized using the proposed KT-CVD approach. The δ-MoN synthesized via KT-CVD demonstrates excellent surface-enhanced Raman scattering and robust thermal stability. This study provides an effective strategy for developing scalable and high-quality non-layered 2D materials, expanding the fabrication and application of devices based on non-layered materials.

Band Alignment Semimetal Heterojunction-Based Ultrabroadband Photodetector for Noncontact Gesture Interaction with Low Latency

Non-contact gesture recognition and interaction (NGRI) revolutionizes the natural user interface, fundamentally transforming human interactions with daily-use technology. Conventional NGRI systems frequently encounter obstacles such as pronounced latency and environmental disturbances, including humidity or lighting conditions, resulting in compromised system fluidity and robustness. This study highlights the utilization of silicon-based semimetal heterojunction photodetectors for precise gesture recognition and seamless human-machine interaction. Through the application of band alignment theory and sophisticated TCAD simulation, heterojunction barriers are successfully optimized by fine-tuning parameters including Si doping concentration and semimetal thickness. By strategically aligning vertical material growth and implementing vertical heterojunction configuration, a room temperature detector with exceptional sensitivity (specific detectivity (D*): ≈1011 Jones), ultra-broad spectral range (405-10600 nm), and rapid response time (≈ µs) is achieved. Harnessing its distinguished speed and sensitivity in detecting human infrared radiation, in conjunction with an advanced spatial-temporal comparison algorithm and a multi-channel high-frequency sampling processing design, a NGRI system with low latency, high precision, minimal energy consumption, and versatility across diverse scenarios has been developed. The results pave the way for non-contact sensor design and may further enhance the practicality and user experience of non-contact human-machine interaction systems.

High-Performance Ultra-Broadband Photodetector Based on Fe3O4/CrSiTe3 Heterostructures

Photodetectors based on advanced materials with a broad spectral photoresponse, high sensitivity, huge integration ability, room-temperature operation, and stable environmental stability are highly desired for diversified applications of imaging, sensing, and communication. Herein, a high-performance ultra-broadband photodetector based on an ultrathin two-dimensional (2D) Fe3O4 nanoflake heterostructure with high sensitivity was designed. The photodetector response light was from visible 405 nm to long-wave infrared (LWIR) 10.6 μm in ambient air. The competitive performances, including a high photoresponsivity (R) of 182.8 A W-1, fast speed with the rise time τr = 8.8 μs, and decay time τd = 4.1 μs, were demonstrated in the visible range. Notably, the device exhibits an excellent uncooled LWIR detection ability, with a high R of 1.4 A W-1 realized at a 1.5 V bias. In the full spectral range, the noise equivalent power is lower than 0.79 pW Hz-1/2, and specific detectivity (D*) is higher than 4.9 × 108 cm Hz1/2 W-1 in ambient air. This work provides alternative ultrathin 2D materials for future infrared optoelectronic devices.

Thermal Conversion of Ultrathin Nickel Hydroxide for Wide Band Gap 2D Nickel Oxides

Wide band gap (WBG) semiconductors (E g > 2.0 eV) are integral to the advancement of next-generation electronics, optoelectronics, and power industries owing to their capability for high-temperature operation, high breakdown voltage, and efficient light emission. Enhanced power efficiency and functional performance can be attained through miniaturization, specifically via the integration of device fabrication into a two-dimensional (2D) structure enabled by WBG 2D semiconductors. However, as an essential subgroup of WBG semiconductors, 2D transition metal oxides (TMOs) remain largely underexplored in terms of physical properties and applications in 2D optoelectronic devices, primarily due to the scarcity of sufficiently large 2D crystals. Thus, our goal is to develop synthesis pathways for 2D TMOs possessing large crystal domains (e.g., >10 μm), expanding the 2D TMO family and providing insights for future engineering of 2D TMOs. Here, we demonstrate the synthesis of WBG 2D nickel oxide (NiO) (E g > 2.7 eV) thermally converted from 2D nickel hydroxide (Ni(OH)2) with a lateral domain size larger than 10 μm. Moreover, the conversion process is investigated using various microscopic techniques, such as atomic force microscopy, Raman spectroscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy, providing significant insights into morphology and structural variations under different oxidative conditions. The electronic structure of the converted Ni x O y is further investigated using multiple soft X-ray spectroscopies, such as X-ray absorption and emission spectroscopies.

Supercapacitively Liquid-Solid Dual-State Optoelectronics

Photo-transduction of solid-state optoelectronics occurs in semiconductors or their interfaces. Considering the confined active area and interfacial capacitance of solid-state materials, solid-state optoelectronics faces inherent limitations in photo-transduction, especially for bionic vision, and the performance is lower than that of living systems. For example, a photoreceptor generates pA-level photocurrent when absorbing a single photon. Here, a liquid-solid dual-state phototransistor is demonstrated, in which photo-transduction and modulation take place at the microporous interface between semiconductors and water, mimicking principles of the photoreceptor. When operating in the water, an orderly stacked photo-harvesting covalent organic framework layer generates supercapacitively photogating modulation of the channel conductivity via a dual-state interface, achieving responsivity of 4.6 × 1010 A W-1 and detectivity of 1.62 × 1016 Jones at room temperature, several orders of magnitude higher than other photodetectors. Such bio-inspired dual-state optoelectronics enables high-contrast scotopic neuromorphic imaging with responsivity greater than photoreceptors, holding promise for constructing optoelectronic systems with performance beyond conventional solid-state optoelectronics.

Spin Transport Modulation of 2D Fe3O4 Nanosheets Driven by Verwey Phase Transition

Realizing spin transport between heavy metal and two-dimensional (2D) magnetic materials at high Curie temperature (TC) is crucial to advanced spintronic information storage technology. Here, environmentally stable 2D nonlayered Fe3O4 nanosheets are successfully synthesized using a reproducible process and found that they exhibit vortex magnetic domains at room temperature. A Verwey phase transition temperature (TV) of ≈110 K is identified for ≈3 nm thick nanosheet through Raman characterization and spin Hall device measurement of the Pt/Fe3O4 bilayer. The anisotropic magnetoresistance ratio decreases near TV, while both the spin Hall magnetoresistance ratio and spin mixing conductance (Gr) increase at TV. As the temperature approaches 112 K, the anomalous Hall effect ratio tends to become zero. The maximum Gr reaches ≈5 × 1015 Ω-1m-2 due to the clean and flat interface between Pt and 2D nanosheet. The observed spin transport behavior in Pt/Fe3O4 spin Hall devices indicates that 2D Fe3O4 nanosheets possess potential for high-power micro spintronic storage devices applications.

Decipher the Wavelength and Intensity Using Photothermoelectric Detectors

Broadband photodetectors that can decipher the wavelength (λ) and intensity (I) of an unknown incident light are urgently demanded. Photothermoelectric (PTE) detectors can achieve ultrabroadband photodetection surpassing the bandgap limitation; however, their practical application is severely hampered by the lack of deciphering strategy. In this work, we report a variable elimination method to decipher λ and I of the incident lights based on an integrated Ag2Se film-based PTE detector. Nanostructured Ag2Se films with controlled thickness are synthesized using an ion sputtering of Ag and a room-temperature selenization method and then assembled into a detector. Under identical illumination, Ag2Se films of different thicknesses produce varying output photothermal voltages, influenced by factors including λ. By establishing a direct relationship between the photothermal voltage and the absorption of Ag2Se films of varied thickness, we successfully eliminate variables independent of λ, thus determining λ. Subsequently, I is determined by the calibrated responsivity relationship using obtained λ. Our PTE detector achieves a broadband spectrum from 400 to 950 nm and high accuracy, with deviations as low as ∼2.63 and ∼0.53% for deciphered λ and I, respectively. This method allows for self-powered broadband decipherable photodetection without a complex device architecture or computational assistance, which could boost the research enthusiasm and promote the commercialization of PTE broadband detectors.

Dynamical Janus-Like Behavior Excited by Passive Cold-Heat Modulation in the Earth-Sun/Universe System: Opportunities and Challenges

The utilization of solar-thermal energy and universal cold energy has led to many innovative designs that achieve effective temperature regulation in different application scenarios. Numerous studies on passive solar heating and radiation cooling often operate independently (or actively control the conversion) and lack a cohesive framework for deep connections. This work provides a concise overview of the recent breakthroughs in solar heating and radiation cooling by employing a mechanism material in the application model. Furthermore, the utilization of dynamic Janus-like behavior serves as a novel nexus to elucidate the relationship between solar heating and radiation cooling, allowing for the analysis of dynamic conversion strategies across various applications. Additionally, special discussions are provided to address specific requirements in diverse applications, such as optimizing light transmission for clothing or window glass. Finally, the challenges and opportunities associated with the development of solar heating and radiation cooling applications are underscored, which hold immense potential for substantial carbon emission reduction and environmental preservation. This work aims to ignite interest and lay a solid foundation for researchers to conduct in-depth studies on effective and self-adaptive regulation of cooling and heating.

Solution-Processable Large-Area Black Phosphorus/Reduced Graphene Oxide Schottky Junction for High-Temperature Broadband Photodetectors

2D materials-based broadband photodetectors have extensive applications in security monitoring and remote sensing fields, especially in supersonic aircraft that require reliable performance under extreme high-temperature conditions. However, the integration of large-area heterostructures with 2D materials often involves high-temperature deposition methods, and also limited options and size of substrates. Herein, a liquid-phase spin-coating method is presented based on the interface engineering to prepare larger-area Van der Waals heterojunctions of black phosphorus (BP)/reduced graphene oxide (RGO) films at room temperature on arbitrary substrates of any required size. Importantly, this method avoids the common requirement of high-temperature, and prevents the curling or stacking in 2D materials during the liquid-phase film formation. The BP/RGO films-based devices exhibit a wide spectral photo-response, ranging from the visible of 532 nm to infrared range of 2200 nm. Additionally, due to Van der Waals interface of Schottky junction, the array devices provide infrared detection at temperatures up to 400 K, with an outstanding photoresponsivity (R) of 12 A W-1 and a specific detectivity (D*) of ≈2.4 × 109 Jones. This work offers an efficient approach to fabricate large-area 2D Schottky junction films by solution-coating for high-temperature infrared photodetectors.

Advancing Nanoelectronics Applications: Progress in Non-van der Waals 2D Materials

Extending the inventory of two-dimensional (2D) materials remains highly desirable, given their excellent properties and wide applications. Current studies on 2D materials mainly focus on the van der Waals (vdW) materials since the discovery of graphene, where properties of atomically thin layers have been found to be distinct from their bulk counterparts. Beyond vdW materials, there are abundant non-vdW materials that can also be thinned down to 2D forms, which are still in their early stage of exploration. In this review, we focus on the downscaling of non-vdW materials into 2D forms to enrich the 2D materials family. This underexplored group of 2D materials could show potential promise in many areas such as electronics, optics, and magnetics, as has happened in the vdW 2D materials. Hereby, we will focus our discussion on their electronic properties and applications of them. We aim to motivate and inspire fellow researchers in the 2D materials community to contribute to the development of 2D materials beyond the widely studied vdW layered materials for electronic device applications. We also give our insights into the challenges and opportunities to guide researchers who are desirous of working in this promising research area.

Multi-Level Switching of Spin-Torque Ferromagnetic Resonance in 2D Magnetite

2D magnetic materials hold substantial promise in information storage and neuromorphic device applications. However, achieving a 2D material with high Curie temperature (TC), environmental stability, and multi-level magnetic states remains a challenge. This is particularly relevant for spintronic devices, which require multi-level resistance states to enhance memory density and fulfil low power consumption and multi-functionality. Here, the synthesis of 2D non-layered triangular and hexagonal magnetite (Fe3O4) nanosheets are proposed with high TC and environmental stability, and demonstrate that the ultrathin triangular nanosheets show broad antiphase boundaries (bAPBs) and sharp antiphase boundaries (sAPBs), which induce multiple spin precession modes and multi-level resistance. Conversely, the hexagonal nanosheets display slip bands with sAPBs associated with pinning effects, resulting in magnetic-field-driven spin texture reversal reminiscent of "0" and "1" switching signals. In support of the micromagnetic simulation, direct explanation is offer to the variation in multi-level resistance under a microwave field, which is ascribed to the multi-spin texture magnetization structure and the randomly distributed APBs within the material. These novel 2D magnetite nanosheets with unique spin textures and spin dynamics provide an exciting platform for constructing real multi-level storage devices catering to emerging information storage and neuromorphic computing requirements.

Two-Dimensional Oxide Crystals for Device Applications: Challenges and Opportunities

Atomically thin two-dimensional (2D) oxide crystals have garnered considerable attention because of their remarkable physical properties and potential for versatile applications. In recent years, significant advancements have been made in the design, preparation, and application of ultrathin 2D oxides, providing many opportunities for new-generation advanced technologies. This review focuses on the controllable preparation of 2D oxide crystals and their applications in electronic and optoelectronic devices. Based on their bonding nature, the various types of 2D oxide crystals are first summarized, including both layered and nonlayered crystals, as well as their current top-down and bottom-up synthetic approaches. Subsequently, in terms of the unique physical and electrical properties of 2D oxides, recent advances in device applications are emphasized, including photodetectors, field-effect transistors, dielectric layers, magnetic and ferroelectric devices, memories, and gas sensors. Finally, conclusions and future prospects of 2D oxide crystals are presented. It is hoped that this review will provide comprehensive and insightful guidance for the development of 2D oxide crystals and their device applications.

Controlled Growth and Size-Dependent Magnetic Domain States of 2D γ-Fe2O3

Nonlayered two-dimensional (2D) magnets have attracted special attention, as many of them possess magnetic order above room temperature and enhanced chemical stability compared to most existing vdW magnets, which offers remarkable opportunities for developing compact spintronic devices. However, the growth of these materials is quite challenging due to the inherent three-dimensionally bonded nature, which hampers the study of their magnetism. Here, we demonstrate the controllable growth of air-stable pure γ-Fe2O3 nanoflakes by a confined-vdW epitaxial approach. The lateral size of the nanoflakes could be adjusted from hundreds of nanometers to tens of micrometers by precisely controlling the annealing time. Interestingly, a lateral-size-dependent magnetic domain configuration was observed. As the sizes continuously increase, the magnetic domain evolves from single domain to vortex and finally to multidomain. This work provides guidance for the controllable synthesis of 2D inverse spinel-type crystals and expands the range of magnetic vortex materials into magnetic semiconductors.

Alternating BiI3-BiI van der Waals Photodetector with Low Dark Current and High-Performance Photodetection

The emerging two-dimensional (2D) van der Waals (vdW) materials and their heterostructures hold great promise for optoelectronics and photonic applications beyond strictly lattice-matching constraints and grade interfaces. However, previous photodetectors and optoelectronic devices rely on relatively simple vdW heterostructures with one or two blocks. The realization of high-order heterostructures has been exponentially challenging due to conventional layer-by-layer arduous restacking or sequential synthesis. In this study, we present an approach involving the direct exfoliation of high-quality BiI3-BiI heterostructure nanosheets with alternating blocks, derived from solution-grown binary heterocrystals. These heterostructure-based photodetectors offer several notable advantages. Leveraging the "active layer energetics" of BiI layers and the establishment of a significant depletion region, our photodetector demonstrates a significant reduction in dark current compared with pure BiI3 devices. Specifically, the photodetector achieves an extraordinarily low dark current (<9.2 × 10-14 A at 5 V bias voltage), an impressive detectivity of 8.8 × 1012 Jones at 638 nm, and a rapid response time of 3.82 μs. These characteristics surpass the performance of other metal-semiconductor-metal (MSM) photodetectors based on various 2D materials and structures at visible wavelengths. Moreover, our heterostructure exhibits a broad-band photoresponse, covering the visible, near-infrared (NIR)-I, and NIR-II regions. In addition to these promising results, our heterostructure also demonstrated the potential for flexible and imaging applications. Overall, our study highlights the potential of alternating vdW heterostructures for future optoelectronics with low power consumption, fast response, and flexible requirements.

Emerging 2D Metal Oxides: From Synthesis to Device Integration

2D metal oxides have aroused increasing attention in the field of electronics and optoelectronics due to their intriguing physical properties. In this review, an overview of recent advances on synthesis of 2D metal oxides and their electronic applications is presented. First, the tunable physical properties of 2D metal oxides that relate to the structure (various oxidation-state forms, polymorphism, etc.), crystallinity and defects (anisotropy, point defects, and grain boundary), and thickness (quantum confinement effect, interfacial effect, etc.) are discussed. Then, advanced synthesis methods for 2D metal oxides besides mechanical exfoliation are introduced and classified into solution process, vapor-phase deposition, and native oxidation on a metal source. Later, the various roles of 2D metal oxides in widespread applications, i.e., transistors, inverters, photodetectors, piezotronics, memristors, and potential applications (solar cell, spintronics, and superconducting devices) are discussed. Finally, an outlook of existing challenges and future opportunities in 2D metal oxides is proposed.

Research Process on Photodetectors based on Group-10 Transition Metal Dichalcogenides

Rapidly evolving group-10 transition metal dichalcogenides (TMDCs) offer remarkable electronic, optical, and mechanical properties, making them promising candidates for advanced optoelectronic applications. Compared to most TMDCs semiconductors, group-10-TMDCs possess unique structures, narrow bandgap, and influential physical properties that motivate the development of broadband photodetectors, specifically infrared photodetectors. This review presents the latest developments in the fabrication of broadband photodetectors based on conventional 2D TMDCs. It mainly focuses on the recent developments in group-10 TMDCs from the perspective of the lattice structure and synthesis techniques. Recent progress in group-10 TMDCs and their heterostructures with different dimensionality of materials-based broadband photodetectors is provided. Moreover, this review accounts for the latest applications of group-10 TMDCs in the fields of nanoelectronics and optoelectronics. Finally, conclusions and outlooks are summarized to provide perspectives for next-generation broadband photodetectors based on group-10 TMDCs.

Interisland-Distance-Mediated Growth of Centimeter-Scale Two-Dimensional Magnetic Fe3O4 Arrays with Unidirectional Domain Orientations

Two-dimensional (2D) nanosheet arrays with unidirectional orientations are of great significance for synthesizing wafer-scale single crystals. Although great efforts have been devoted, the growth of atomically thin magnetic nanosheet arrays and single crystals is still unaddressed. Here we design an interisland-distance-mediated chemical vapor deposition strategy to synthesize centimeter-scale atomically thin Fe₃O₄ arrays with unidirectional orientations on mica. The unidirectional alignment of nearly all the Fe₃O₄ nanosheets is driven by a dual-coupling-guided growth mechanism. The Fe₃O₄/mica interlayer interaction induces two preferred antiparallel orientations, whereas the interisland interaction of Fe₃O₄ breaks the energy degeneracy of antiparallel orientations. The room-temperature long-range ferrimagnetic order and thickness-tunable magnetic domain evolution are uncovered in atomically thin Fe₃O₄. This strategy to tune the orientations of nanosheets through the an interisland interaction can guide the synthesis of other 2D transition-metal oxides, thereby laying a solid foundation for future spintronic device applications at the integration level.

A general thermodynamics-triggered competitive growth model to guide the synthesis of two-dimensional nonlayered materials

Two-dimensional (2D) nonlayered materials have recently provoked a surge of interest due to their abundant species and attractive properties with promising applications in catalysis, nanoelectronics, and spintronics. However, their 2D anisotropic growth still faces considerable challenges and lacks systematic theoretical guidance. Here, we propose a general thermodynamics-triggered competitive growth (TTCG) model providing a multivariate quantitative criterion to predict and guide 2D nonlayered materials growth. Based on this model, we design a universal hydrate-assisted chemical vapor deposition strategy for the controllable synthesis of various 2D nonlayered transition metal oxides. Four unique phases of iron oxides with distinct topological structures have also been selectively grown. More importantly, ultra-thin oxides display high-temperature magnetic ordering and large coercivity. Mn_xFe_yCo_3-x-yO₄ alloy is also demonstrated to be a promising room-temperature magnetic semiconductor. Our work sheds light on the synthesis of 2D nonlayered materials and promotes their application for room-temperature spintronic devices.

Phase-controlled van der Waals growth of wafer-scale 2D MoTe2 layers for integrated high-sensitivity broadband infrared photodetection

Being capable of sensing broadband infrared (IR) light is vitally important for wide-ranging applications from fundamental science to industrial purposes. Two-dimensional (2D) topological semimetals are being extensively explored for broadband IR detection due to their gapless electronic structure and the linear energy dispersion relation. However, the low charge separation efficiency, high noise level, and on-chip integration difficulty of these semimetals significantly hinder their further technological applications. Here, we demonstrate a facile thermal-assisted tellurization route for the van der Waals (vdW) growth of wafer-scale phase-controlled 2D MoTe₂ layers. Importantly, the type-II Weyl semimetal 1T'-MoTe₂ features a unique orthorhombic lattice structure with a broken inversion symmetry, which ensures efficient carrier transportation and thus reduces the carrier recombination. This characteristic is a key merit for the well-designed 1T'-MoTe₂/Si vertical Schottky junction photodetector to achieve excellent performance with an ultrabroadband detection range of up to 10.6 µm and a large room temperature specific detectivity of over 10⁸ Jones in the mid-infrared (MIR) range. Moreover, the large-area synthesis of 2D MoTe₂ layers enables the demonstration of high-resolution uncooled MIR imaging capability by using an integrated device array. This work provides a new approach to assembling uncooled IR photodetectors based on 2D materials.

Ferroelectric-gated MoSe2photodetectors with high photoresponsivity

Ferroelectric transistors with semiconductors as the channel material and ferroelectrics as the gate insulator have potential applications in nanoelectronics. We report in-situ modulation of optoelectronic properties of MoSe₂thin flakes on ferroelectric 0.7PbMg_1/3Nb_2/3O₃-0.3PbTiO₃(PMN-PT). Under the excitation of 638 nm laser, the photoresponsivity can be greatly boosted to 59.8 A W^-1and the detectivity to 3.2 × 10¹⁰Jones, with the improvement rates of about 1500% and 450%, respectively. These results suggest hybrid structure photodetector of two-dimensional layered material and ferroelectric has great application prospects in photoelectric detector.

Advances in Two-Dimensional Materials for Optoelectronics Applications

The past one and a half decades have witnessed the tremendous progress of two-dimensional (2D) crystals, including graphene, transition-metal dichalcogenides, black phosphorus, MXenes, hexagonal boron nitride, etc., in a variety of fields. The key to their success is their unique structural, electrical, mechanical and optical properties. Herein, this paper gives a comprehensive summary on the recent advances in 2D materials for optoelectronic approaches with the emphasis on the morphology and structure, optical properties, synthesis methods, as well as detailed optoelectronic applications. Additionally, the challenges and perspectives in the current development of 2D materials are also summarized and indicated. Therefore, this review can provide a reference for further explorations and innovations of 2D material-based optoelectronics devices.

Horizontally Self-Standing Growth of Bi2 O2 Se Achieving Optimal Optoelectric Properties

Air-stable 2D Bi₂ O₂ Se material with high carrier mobility appears as a promising semiconductor platform for future micro/nanoelectronics and optoelectronics. Like most 2D materials, Bi₂ O₂ Se 2D nanostructures normally form on atomically flat mica substrates, in which undesirable defects and structural damage from the subsequent transfer process will largely degrade their photoelectronic performance. Here, a new synthesis route involving successive kinetic and thermodynamic processes is proposed to achieve horizontally self-standing Bi₂ O₂ Se nanostructures on SiO₂ /Si substrates. Fewer defects and avoidance of transfer procedure involving corrosive solvents ensure the integrity of the intrinsic lattice and band structures in Bi₂ O₂ Se nanostructures. In contrast to flat structures grown on mica, it displays reduced dark current and improved photoresponse performance (on-off ratio, photoresponsivity, response time, and detectivity). These results indicate a new potential in high-quality 2D electronic nanostructures with optimal optoelectronic functionality.

Broadband photoresponse arising from photo-bolometric effect in quasi-one-dimensional Ta2Ni3Se8

In this paper, we report the synthesis of high-quality Ta₂Ni₃Se₈crystals free of noble or toxic elements and the fabrication and testing of photodetectors on the wire samples. A broadband photoresponse from 405 nm to 1550 nm is observed, along with performance parameters including relatively high photoresponsivity (10 mA W^-1) and specific detectivity (3.5 × 10⁷Jones) and comparably short response time (τ_rise= 433 ms,τ_decay= 372 ms) for 1064 nm, 0.5 V bias and 1.352 mW mm^-2. Through extensive measurement and analysis, it is determined that the dominant mechanism for photocurrent generation is the photo-bolometric effect, which is believed to be responsible for the very broad spectral detection capability. More importantly, the pronounced response to 1310 nm and 1550 nm wavelengths manifests its promising applications in optical communications. Considering the quasi-one-dimensional structure with layered texture, the potential to build nanodevices on Ta₂Ni₃Se₈makes it even more important in future electronic and optoelectronic applications.

Chemical Vapor Deposition of Ferrimagnetic Fe3O4 Thin Films

Ultrathin magnetic materials with room-temperature ferromagnetism/ferrimagnetism hold great potential in spintronic applications. In this work, we report the successful controllable growth of Fe3O4 thin films using a facile chemical vapor deposition method. Room-temperature ferrimagnetism was maintained in the as-grown Fe3O4 thin films down to 4 nm. Raman spectroscopy, X-ray diffraction and X-ray photoelectron spectroscopy analysis were conducted to reveal the structure and quality of the Fe3O4 film. Magnetization measurement showed ferrimagnetic hysteresis loops in all Fe3O4 thin films. A saturation magnetization of 752 emu/cm3 was observed for the 4 nm Fe3O4 film, which was higher than that of bulk Fe3O4 materials (480 emu/cm3). Additionally, the Verwey transition at ~120 K was visible for the Fe3O4 thin films. This work provides an alternative method of synthesizing ferrimagnetic ultrathin films for electronic, spintronic, and memory device applications.

A nanomesh electrode for self-driven perovskite photodetectors with tunable asymmetric Schottky junctions

Self-driven photodetectors are essential for many applications where it is unpractical to provide or replace power sources. Here, we report a new device architecture for self-driven photodetectors with tunable asymmetric Schottky junctions based on a nanomesh electrode. The vertical-channel nanomesh scaffold is composed of a hexagonally ordered nanoelectrode array fabricated via the nanosphere lithography technique. The top and bottom nanoelectrodes are separated by only 30 nm and the areal ratio of the two nanoelectrodes can be fine-tuned, which effectively modifies the geometric asymmetricity of the Schottky junctions in the photodetector devices. The self-driven photodetectors are fabricated by depositing the (FAPbI₃)_0.97(MAPbBr₃)_0.03 (MA = methylammonium, FA = formamidinium) perovskite films onto the nanomesh electrodes. Under the self-driven mode, the optimized device demonstrates a high detectivity of 1.05 × 10¹¹ Jones and a large on/off ratio of 2.1 × 10³. This nanomesh electrode is very versatile and can be employed to investigate the optoelectronic properties of various semiconducting materials.

Doping-free bandgap tunability in Fe2O3 nanostructured films

A tunable bandgap without doping is highly desirable for applications in optoelectronic devices. Herein, we develop a new method which can tune the bandgap without any doping. In the present research, the bandgap of Fe2O3 nanostructured films is simply tuned by changing the synthesis temperature. The Fe2O3 nanostructured films are synthesized on ITO/glass substrates at temperatures of 1100, 1150, 1200, and 1250 °C using the hot filament metal oxide vapor deposition (HFMOVD) and thermal oxidation techniques. The Fe2O3 nanostructured films contain two mixtures of Fe2+ and Fe3+ cations and two trigonal (α) and cubic (γ) phases. The increase of the Fe2+ cations and cubic (γ) phase with the elevated synthesis temperatures lifted the valence band edge, indicating a reduction in the bandgap. The linear bandgap reduction of 0.55 eV without any doping makes the Fe2O3 nanostructured films promising materials for applications in bandgap engineering, optoelectronic devices, and energy storage devices.

Progress in Iron Oxides Based Nanostructures for Applications in Energy Storage

The demand for green and efficient energy storage devices in daily life is constantly rising, which is caused by the global environment and energy problems. Lithium-ion batteries (LIBs), an important kind of energy storage devices, are attracting much attention. Graphite is used as LIBs anode, however, its theoretical capacity is low, so it is necessary to develop LIBs anode with higher capacity. Application strategies and research progresses of novel iron oxides and their composites as LIBs anode in recent years are summarized in this review. Herein we enumerate several typical synthesis methods to obtain a variety of iron oxides based nanostructures, such as gas phase deposition, co-precipitation, electrochemical method, etc. For characterization of the iron oxides based nanostructures, especially the in-situ X-ray diffraction and ⁵⁷Fe Mössbauer spectroscopy are elaborated. Furthermore, the electrochemical applications of iron oxides based nanostructures and their composites are discussed and summarized.

Graphic Abstract

Electronic Modulation of Non-van der Waals 2D Electrocatalysts for Efficient Energy Conversion

The exploration of efficient electrocatalysts for energy conversion is important for green energy development. Owing to their high surface areas and unusual electronic structure, 2D electrocatalysts have attracted increasing interest. Among them, non-van der Waals (non-vdW) 2D materials with numerous chemical bonds in all three dimensions and novel chemical and electronic properties beyond those of vdW 2D materials have been studied increasingly over the past decades. Herein, the progress of non-vdW 2D electrocatalysts is critically reviewed, with a special emphasis on electronic structure modulation. Strategies for heteroatom doping, vacancy engineering, pore creation, alloying, and heterostructure engineering are analyzed for tuning electronic structures and achieving intrinsically enhanced electrocatalytic performances. Lastly, a roadmap for the future development of non-vdW 2D electrocatalysts is provided from material, mechanism, and performance viewpoints.

Two-dimensional magneto-photoconductivity in non-van der Waals manganese selenide

Deficient intrinsic species and suppressed Curie temperatures (T_c) in two-dimensional (2D) magnets are major barriers for future spintronic applications. As an alternative, delaminating non-van der Waals (vdW) magnets can offset these shortcomings and involve robust bandgaps to explore 2D magneto-photoconductivity at ambient temperature. Herein, non-vdW α-MnSe₂ is first delaminated as quasi-2D nanosheets for the study of emerging semiconductor, ferromagnetism and magneto-photoconductivity behaviors. Abundant nonstoichiometric surfaces induce the renormalization of the band structure and open a bandgap of 1.2 eV. The structural optimization strengthens ferromagnetic super-exchange interactions between the nearest-neighbor Mn²⁺, which enables us to achieve a high T_c of 320 K well above room temperature. The critical fitting of magnetization and transport measurements both verify that it is of quasi-2D nature. The above observations are evidenced by multiple microscopic and macroscopic characterization tools, in line with the prediction of first-principles calculations. Profiting from the negative magnetoresistance effect, the self-powered infrared magneto-photoconductivity performance including a responsivity of 330.4 mA W^-1 and a millisecond-level response speed are further demonstrated. Such merits stem from the synergistic modulation of magnetic and light fields on photogenerated carriers. This provides a new strategy to manipulate both charge and spin in 2D non-vdW systems and displays their alluring prospects in magneto-photodetection.

In Situ Growth of GeS Nanowires with Sulfur-Rich Shell for Featured Negative Photoconductivity

The negative photoconductivity (NPC) effect originating from the surface shell layer has been considered as an efficient approach to improve the performance of optoelectronic nanodevices. However, a scientific design and precise growth of NPC-effect-caused shell during nanowire (NW) growth process for achieving high-performance photodetectors are still lacking. In this work, GeS NWs with a controlled sulfur-rich shell, diameter, and length are successfully prepared by a simple chemical vapor deposition method. As checked by transmission electron microscopy, the thickness of the sulfur-rich shell ranges from 10.5 ± 1.5 to 13.4 ± 2.5 nm by controlling the NW growth time. The composition of the sulfur-rich shell is studied by X-ray photoelectron spectroscopy, showing the decrease of S in the GeS_x shell from the surface to core. When configured into the well-known phototransistor, a featured NPC effect is observed, benefiting the high-performance photodetector with high responsivity of 10⁵ A·W^-1 and detectivity of 10¹² Jones for λ = 405 nm with ultralow intensity of 0.04 mW·cm^-2. However, the thicker-shell NW phototransistor shows an unstable photodetector behavior with smaller negative photocurrent because of more hole-trapping states in the thicker shell. All results suggest a careful design and controlled growth of an NPC-effect-caused shell for future optoelectronic applications.

Van der Waals Epitaxial Growth of Mosaic-Like 2D Platinum Ditelluride Layers for Room-Temperature Mid-Infrared Photodetection up to 10.6 µm

Mid-infrared (MIR) photodetection, covering diverse molecular vibrational regions and atmospheric transmission windows, is vital to civil and military purposes. Versatile use of MIR photodetectors is commonly dominated by HgCdTe alloys, InSb, and quantum superlattices, which are limited by strict operation demands, high-cost, and environmental toxicity. Despite the rapid advances of black phosphorus (BP)-based MIR photodetectors, these are subject to poor stability and large-area integration difficulty. Here, the van der Waals (vdW) epitaxial growth of a wafer-scale 2D platinum ditelluride (PtTe₂ ) layer is reported via a simple tellurium-vapor transformation approach. The 2D PtTe₂ layer possesses a unique mosaic-like crystal structure consisting of single-crystal domains with highly preferential [001] orientation along the normal direction, reducing the influence of interface defects and ensuring efficient out-of-plane carrier transportation. This characteristic, combined with the wide absorption of PtTe₂ and well-designed vertical device architecture, makes the PtTe₂ /Si Schottky junction photodetector capable of sensing ultra-broadband light of up to 10.6 µm with a high specific detectivity. Also, the photodetector exhibits an excellent room-temperature infrared-imaging capability. This approach provides a new design concept for high-performance, room-temperature MIR photodetection based on 2D layered materials.

Air-Stable Low-Symmetry Narrow-Bandgap 2D Sulfide Niobium for Polarization Photodetection

Low-symmetry 2D materials with unique anisotropic optical and optoelectronic characteristics have attracted a lot of interest in fundamental research and manufacturing of novel optoelectronic devices. Exploring new and low-symmetry narrow-bandgap 2D materials will be rewarding for the development of nanoelectronics and nano-optoelectronics. Herein, sulfide niobium (NbS₃ ), a novel transition metal trichalcogenide semiconductor with low-symmetry structure, is introduced into a narrowband 2D material with strong anisotropic physical properties both experimentally and theoretically. The indirect bandgap of NbS₃ with highly anisotropic band structures slowly decreases from 0.42 eV (monolayer) to 0.26 eV (bulk). Moreover, NbS₃ Schottky photodetectors have excellent photoelectric performance, which enables fast photoresponse (11.6 µs), low specific noise current (4.6 × 10^-25 A² Hz^-1 ), photoelectrical dichroic ratio (1.84) and high-quality reflective polarization imaging (637 nm and 830 nm). A room-temperature specific detectivity exceeding 10⁷ Jones can be obtained at the wavelength of 3 µm. These excellent unique characteristics will make low-symmetry narrow-bandgap 2D materials become highly competitive candidates for future anisotropic optical investigations and mid-infrared optoelectronic applications.